CN103681958B - Texturization method for multi-crystalline silicon wafer - Google Patents
Texturization method for multi-crystalline silicon wafer Download PDFInfo
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- CN103681958B CN103681958B CN201310482090.8A CN201310482090A CN103681958B CN 103681958 B CN103681958 B CN 103681958B CN 201310482090 A CN201310482090 A CN 201310482090A CN 103681958 B CN103681958 B CN 103681958B
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 25
- 239000002253 acid Substances 0.000 claims abstract description 17
- 235000008216 herbs Nutrition 0.000 claims description 35
- 210000002268 wool Anatomy 0.000 claims description 35
- 238000001914 filtration Methods 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 13
- 229920005591 polysilicon Polymers 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 6
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 6
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000005642 Oleic acid Substances 0.000 claims description 6
- 239000007822 coupling agent Substances 0.000 claims description 6
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 6
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 235000021355 Stearic acid Nutrition 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 5
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 claims description 5
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- -1 silicon Alkane Chemical class 0.000 claims description 5
- 239000008117 stearic acid Substances 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- 239000004925 Acrylic resin Substances 0.000 claims description 4
- 229920000178 Acrylic resin Polymers 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical group CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- 229920003180 amino resin Polymers 0.000 claims description 2
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 claims description 2
- 230000008859 change Effects 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 238000005286 illumination Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims 3
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims 2
- OSNIIMCBVLBNGS-UHFFFAOYSA-N 1-(1,3-benzodioxol-5-yl)-2-(dimethylamino)propan-1-one Chemical compound CN(C)C(C)C(=O)C1=CC=C2OCOC2=C1 OSNIIMCBVLBNGS-UHFFFAOYSA-N 0.000 claims 1
- 239000004743 Polypropylene Substances 0.000 claims 1
- 150000001408 amides Chemical class 0.000 claims 1
- 239000003208 petroleum Substances 0.000 claims 1
- 229920001155 polypropylene Polymers 0.000 claims 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 239000004634 thermosetting polymer Substances 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 239000007789 gas Substances 0.000 description 20
- 238000000985 reflectance spectrum Methods 0.000 description 6
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229920000058 polyacrylate Polymers 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000005058 Isophorone diisocyanate Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005010 epoxy-amino resin Substances 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- FATBGEAMYMYZAF-KTKRTIGZSA-N oleamide Chemical compound CCCCCCCC\C=C/CCCCCCCC(N)=O FATBGEAMYMYZAF-KTKRTIGZSA-N 0.000 description 1
- FATBGEAMYMYZAF-UHFFFAOYSA-N oleicacidamide-heptaglycolether Natural products CCCCCCCCC=CCCCCCCCC(N)=O FATBGEAMYMYZAF-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a texturization method for a multi-crystalline silicon wafer. The surface of the multi-crystalline silicon wafer is coated with a gas filter sieve layer, and then texturization is implemented via an acid solution. According to the invention, the texturization method is novel, an elongated wormhole-type texture structure is formed, the texture surface is lower in reflectivity and is uniform, and the efficiency of cells is further improved.
Description
Technical field
The present invention relates to a kind of polycrystalline silicon texturing method.
Background technology
In polycrystalline silicon solar cell manufacture process, silicon chip surface making herbs into wool is the key link.The direct shadow of effect of making herbs into wool
The conversion efficiency of final cell piece is rung.Because polysilicon chip is made up of the crystal grain of different crystal orientations, multiplex acid solution carrys out making herbs into wool,
But matte size is larger and uniformity is not good, aberration is obvious between different crystal grain, and surface reflectivity is higher, making herbs into wool stability
It is bad.In addition, black line easily occurs in surface, battery surface aberration ratio is caused to increase, battery dark current increases.
New Polycrystalline silicon wafer fine hair making method provided by the present invention, the method that can make polycrystalline silicon texturing breaks through existing think of
Dimension, forms elongated worm hole type suede structure, with lower reflectivity and uniform matte, and then further lifts cell piece
Efficiency.
The content of the invention
The present invention provides a kind of method of New Polycrystalline silicon chip making herbs into wool, it is characterised in that：One is coated on polysilicon chip surface
Layer gas filtration screen layers, then carry out acid solution making herbs into wool.Elongated worm hole type knot can be formed using the etching method of the present invention
The matte of structure, with lower reflectivity and uniform matte.
Present inventor has found through long-time research, during making herbs into wool, due to the special chi of gas filtration sieve
Very little and surface tension so that silicon chip reacts the gas for producing with Woolen-making liquid and sieves was just rejected to before certain size is reached
Outside, can be prevented effectively from and gather to form air pocket in silicon chip surface, so as to control suede structure in worm hole size and shape
Looks.This suede structure reduces the surface reflectivity of sunshine, further improves the efficiency of cell piece.
The gas filtration screen layers that the present invention is used are prepared as follows：(1) preparation of material liquid is sieved in gas filtration：By thermosetting tree
Liposoluble is subsequently adding coupling agent in solvent, adds in oleic acid, oleamide, stearic acid, dioctyl phthalate
Kind, room temperature is then cooled to, form gas filtration sieve material liquid；(2) coating gas sieves：Gas filtration sieve material liquid is applied
Overlay on how prosperous silicon chip；(3) solid gas sieves：By the gas filtration being coated on polysilicon chip sieve material liquid solidification.Gu
The change time is 10 seconds -- 30 minutes, solidification temperature was：20-100 DEG C, it is preferably heated to 50-300 DEG C of temperature-curable 15-300
Second, with illumination curing or can be heating and curing.
The coupling agent is silane coupler, preferred silane coupler KH-560 and Silane coupling reagent KH-570.
Thickness is sieved in gas filtration of the present invention：0.5-30μm.
Thermosetting resin of the present invention is selected from acrylic resin, phenolic resin, epoxy resin, amino resins or other trees
One or more in fat, preferred acrylic resins and epoxy resin, most preferred acrylic resin.
The present invention is provided in the new etching method of polysilicon chip acid solution compound method, including by 3060 weight portions
Nitric acid and 7-20 weight portions hydrofluoric acid it is soluble in water, obtain the acid solution of 100 weight portions.Preferably use 40-50 weight portions
Nitric acid and 10-15 weight portions hydrofluoric acid it is soluble in water, obtain the acid solution of 100 weight portions.
The mass concentration of the nitric acid is 40-75%, and the mass concentration of the hydrofluoric acid is 40-60%, preferably the nitre
The mass concentration of acid is 69%, and the mass concentration of the hydrofluoric acid is 49%.
Optionally add flocking additive in acid solution, flocking additive comprising triethanolamine, polyvinylpyrrolidone and
Water, such as using the polycrystalline silicon solar cell making herbs into wool supplement (name of product of Changzhou ShiChuang Energy Technology Co., Ltd.：Polysilicon
Etching solar cells supplement TP2 is serial).
Polycrystalline silicon texturing method making herbs into wool temperature of the present invention is 8-25 DEG C, and the time is 50-200s.
It is an advantage of the current invention that：Using the etching method of the present invention, the matte of elongated worm hole type structure can be obtained,
Antiradar reflectivity and uniform matte are kept simultaneously, and then improve the photoelectric transformation efficiency of cell piece.Additionally, the present invention is with nontoxic
Property, non-corrosiveness is nonirritant, to human body and environment non-hazardous, and prepares and uses process is simple, and equipment is cheap, repeats
Property is good.
Description of the drawings
Fig. 1 is the stereoscan photograph in the silicon chip surface making herbs into wool face that embodiment 1 is obtained.
Fig. 2 is the reflectance spectrum in the silicon chip surface making herbs into wool face that embodiment 1 is obtained.
Fig. 3 is the stereoscan photograph in the silicon chip surface making herbs into wool face that embodiment 2 is obtained.
Fig. 4 is the reflectance spectrum in the silicon chip surface making herbs into wool face that embodiment 2 is obtained.
Fig. 5 is the stereoscan photograph in the silicon chip surface making herbs into wool face that embodiment 3 is obtained.
Fig. 6 is the reflectance spectrum in the silicon chip surface making herbs into wool face that embodiment 3 is obtained.
Specific embodiment
Part material used in following examples is as follows：
Water-soluble polyacrylate：Polypentaerythritol tetraacrylate
Soluble polyurethane：IPDI polyurethane
Silane coupler KH-560：3- (2,3- the third oxygen of epoxy) propyl trimethoxy silicane
Silane coupling reagent KH-570：γ-(methacryloxypropyl) propyl trimethoxy silicane
Stearic acid：Primes stearic acid
Oleic acid：Primes oleic acid
Embodiment 1
Take following processing step：1) gas filtration sieve is prepared：By 5g water-soluble polyacrylates and 3g water-soluble poly ammonia
Ester is dissolved in 100ml ethanol under the conditions of 70 DEG C, afterwards under the conditions of 70 DEG C add 0.5ml silane coupler KH-560 and
The stearic acid of 1ml, forms gas filtration sieve liquid, and is cooled to room temperature；2) acid solution is prepared：By 500ml nitric acid, (concentration is
69%) in being dissolved in deionized water with 100ml hydrofluoric acid (concentration is 49%), it is made into the acid solution of 1L；3) coating gas sieves：
Gas filtration sieve liquid is coated by spin-coating method on polysilicon chip, speed is first 300 turns/min at a slow speed, then quick 2500 turns/
Min, the correspondence time is respectively 5s and 30s；4) solid gas sieves：Solidified by curing oven method, solidification temperature is 80 DEG C,
Time is 5min；5) making herbs into wool：The polysilicon chip for being coated with sieves is positioned over making herbs into wool in acid solution, and making herbs into wool temperature is 50 DEG C,
Time is 50s；
Fig. 1 gives the stereoscan photograph according to silicon chip surface making herbs into wool face after the making herbs into wool of embodiment 1, as we can see from the figure
Silicon chip surface defines new elongated worm matte, and length is about 15-30 μm, and width is about 2-3 μm.Fig. 2 gives basis
After the making herbs into wool of embodiment 1 after making herbs into wool silicon chip surface making herbs into wool face reflectance spectrum, from the figure, it can be seen that the silicon chip table that the present invention is obtained
The reflectivity in face making herbs into wool face is relatively low, and the integrated reflectivity in 300-1100nm wave-length coverages is less than 16%.
Embodiment 2
Take following processing step：1) gas filtration sieve is prepared：By 8g water-soluble polyacrylates under conditions of 75 DEG C
In being dissolved in 100ml acetone, the Silane coupling reagent KH-570 of 0.8ml and the oleic acid of 1ml are added under conditions of 70 DEG C afterwards, formed
Liquid is sieved in gas filtration, and is cooled to room temperature；2) acid solution is prepared：By 450ml nitric acid, 150ml hydrofluoric acid and 5ml flocking additives
Mixing, is made into altogether the acid solution of 1L；3) sieves is coated：Sieves liquid is coated by czochralski method on polysilicon chip, is lifted
Speed is 1mm/mm, and the time is 50min；4) sieves is solidified：Solidified by ultraviolet method, the power of uviol lamp is 200w, the time
For 300s；5) making herbs into wool：The polysilicon chip for being coated with sieves is positioned over making herbs into wool in acid solution, and making herbs into wool temperature is 20 DEG C, when
Ask as 70s；
Fig. 3 gives the stereoscan photograph according to silicon chip surface making herbs into wool face after the making herbs into wool of embodiment 2, as we can see from the figure
Silicon chip surface defines new elongated worm matte, and length is about 12-26 μm, and width is about 2-4 μm.Fig. 4 gives basis
After the making herbs into wool of embodiment 2 after making herbs into wool silicon chip surface making herbs into wool face reflectance spectrum, from the figure, it can be seen that the silicon chip table that the present invention is obtained
The reflectivity in face making herbs into wool face is relatively low, and the integrated reflectivity in 300-1100nm wave-length coverages is less than 17.5%.
Embodiment 3：
Except not using gas filtration sieve, other conditions same as Example 1, repeat embodiment 1, to polysilicon
Piece carries out making herbs into wool, and gained stereoscan photograph and reflectance spectrum are as shown in Figure 5 and Figure 6.According to Fig. 5 and Fig. 6, gas is not used
Body sieves has the disadvantages that：The matte of fat worm hole type structure is formed, reflectivity is higher and matte is uneven.
Claims (10)
1. a kind of polycrystalline silicon texturing method, it is characterised in that：One layer of gas filtration screen layers are coated on polysilicon chip surface, then
Carry out acid solution making herbs into wool, the gas filtration screen layers are thermoset resin layer, and the gas filtration screen layers are prepared as follows：
(1) preparation of material liquid is sieved in gas filtration：Thermosetting resin is dissolved in solvent, coupling agent is added, oleic acid, oleic acid is subsequently adding
One or more in acid amides, stearic acid, dioctyl phthalate, is then cooled to room temperature, forms gas filtration sieve raw material
Liquid, the coupling agent is silane coupler；(2) coating gas sieves：Gas filtration sieve material liquid is coated in into polysilicon chip
On；(3) solid gas sieves：By the gas filtration being coated on polysilicon chip sieve material liquid is by illumination curing or adds thermosetting
The mode of change is solidified.
2. etching method according to claim 1, it is characterised in that：The coupling agent is silane coupler KH-560 and silicon
Alkane coupling agent kh-570.
3. the etching method according to any one in claim 1-2, it is characterised in that：The gas filtration screen layers thickness
For：0.5-30μm.
4. etching method according to claim 1, it is characterised in that hardening time is -30 minutes 10 seconds, solidification temperature is：
20-100℃。
5. etching method according to claim 1, it is characterised in that thermosetting resin is selected from acrylic resin, phenolic aldehyde tree
One or more in fat, epoxy resin, amino resins.
6. etching method according to claim 1, it is characterised in that thermosetting resin using water-soluble polypropylene acid fat and/
Or soluble polyurethane.
7. etching method according to claim 1, it is characterised in that the component that acid solution is included is：Nitric acid, hydrofluoric acid, system
Suede additive, and the water of surplus.
8. etching method according to claim 7, it is characterised in that water is deionized water.
9. etching method according to claim 7, it is characterised in that triethanolamine, polyethylene pyrrole are included in flocking additive
Pyrrolidone and water.
10. etching method according to claim 1, it is characterised in that solvent selected from ethanol, acetone, cyclohexanone, dimethyl
One or more in formamide, ether, ethyl acetate, dimethylbenzene, toluene and petroleum ether.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310482090.8A CN103681958B (en) | 2013-10-16 | 2013-10-16 | Texturization method for multi-crystalline silicon wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310482090.8A CN103681958B (en) | 2013-10-16 | 2013-10-16 | Texturization method for multi-crystalline silicon wafer |
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| Publication Number | Publication Date |
|---|---|
| CN103681958A CN103681958A (en) | 2014-03-26 |
| CN103681958B true CN103681958B (en) | 2017-05-17 |
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| CN201310482090.8A Active CN103681958B (en) | 2013-10-16 | 2013-10-16 | Texturization method for multi-crystalline silicon wafer |
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Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104060325A (en) * | 2014-06-20 | 2014-09-24 | 润峰电力有限公司 | Polycrystalline silicon texturing solution and texturing method thereof |
| CN105040108B (en) * | 2015-08-21 | 2017-11-17 | 浙江启鑫新能源科技股份有限公司 | The etching method of polysilicon solar cell |
| CN106119974A (en) * | 2016-07-07 | 2016-11-16 | 合肥中南光电有限公司 | A kind of monocrystaline silicon solar cell sheet surface texture liquid containing extract from pine needles and preparation method thereof |
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