CN102168315B - Method for texturing surface of monocrystalline silicon solar battery - Google Patents
Method for texturing surface of monocrystalline silicon solar battery Download PDFInfo
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- CN102168315B CN102168315B CN2011100604224A CN201110060422A CN102168315B CN 102168315 B CN102168315 B CN 102168315B CN 2011100604224 A CN2011100604224 A CN 2011100604224A CN 201110060422 A CN201110060422 A CN 201110060422A CN 102168315 B CN102168315 B CN 102168315B
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Abstract
The invention relates to a method for texturing the surface of a monocrystalline silicon solar battery, which comprises the following steps of: (1) preparing, in an ultrasonic tank, a mixed solution consisting of detergent with the concentration of 0.005% to 0.015% and sodium hydroxide with the concentration of 0.015% to 0.2%, heating the mixed solution to the constant temperature of 80 to 90 DEG C, and ultrasonically cleaning a monocrystalline silicon wafer within the constant temperature interval for 1-5min; (2) after the monocrystalline silicon wafer is cleaned, uniformly spraying a solution G on the surface of the monocrystalline silicon wafer, wherein the solution G contains 1% to 5% of sodium salt, 0.01% to 0.05% of carbamide and 0.0015% to 0.01% of lactic acid in percentage by mass; (3) preparing alkaline corrosive liquid in the constant temperature ultrasonic tank, and putting the monocrystalline silicon wafer in the alkaline corrosive liquid for being corroded, wherein the scope of reaction temperature is from 70 to 85 DEG C and the corrosion time is from 10 to 25 minutes; and (4) flushing the monocrystalline silicon wafer after corrosion reaction, and drying the monocrystalline silicon wafer by drying to complete the texturing on the surface of the monocrystalline silicon wafer. The method of the invention has low cost, is beneficial to absorption of solar energy, and can be widely applied to the filed of solar batteries.
Description
Technical field
The present invention relates to the battery surface texturing method in a kind of technical field of solar batteries, particularly about a kind of monocrystaline silicon solar cell surface-texturing method.
Background technology
Low-cost, high efficiency solar cell is the focus that people chase always, and the monocrystaline silicon solar cell surface-texturing is one of effective means that improves conversion efficiency of solar cell at present.Usually, textured method mainly is an alkaline etching, and alkaline etching is in caustic corrosion liquid, to add various buffer solutions; Wait controls reaction speed such as isopropyl alcohol, ethanol, sodium metasilicate; To obtain having the matte of micron dimension pyramid pattern, the size of pyramid pattern is more little, and is even more; The extinction ability of monocrystalline silicon is strong more, and the conversion efficiency of solar cell is also just high more.At present, the main isopropyl alcohol that uses is as buffer solution on the large solar battery production, and concentration adopts 5%～10% usually.But because the isopropyl alcohol cost is higher, volatility is big, and consumption is big, and needs continuous make-up solution in process of production, thereby causes cost to raise.When silicon chip surface forms even little matte, also to control corrosion thickness.Because the thickness that above-mentioned corrosive liquid makes monocrystalline silicon erode is bigger than normal, be difficult to control, thickness is more and more thinner frangible, and production cost is further improved.
Summary of the invention
To the problems referred to above, the purpose of this invention is to provide a kind of cost lower, can on monocrystalline silicon piece texture, form evenly and the less pyramid of size, and help the monocrystaline silicon solar cell surface-texturing method of solar absorption.
For realizing above-mentioned purpose; The present invention takes following technical scheme: a kind of monocrystaline silicon solar cell surface-texturing method; Its step is following: prepare in ultrasonic tank by concentration (1) is that 0.005%～0.015% dish detergent and concentration are the mixed liquor that 0.015%～0.2% NaOH is formed; And this mixed liquor is heated to 80～90 ℃ constant temperature, monocrystalline silicon piece is carried out the ultrasonic of 1～5min between this flat-temperature zone to wash down; (2) clean up after, evenly spray G solution at said monocrystalline silicon sheet surface, said G solution comprises that mass percent is that 1%～5% sodium salt, mass percent are that 0.01%～0.05% phosphoamide and mass percent are 0.0015%～0.01% lactic acid; (3) in the thermostatic ultrasonic groove, prepare alkaline corrosion liquid, be placed on said monocrystalline silicon piece in the said alkaline corrosion liquid and corrode, its range of reaction temperature is 70～85 ℃, and etching time is 10～25min; (4) the said monocrystalline silicon piece of corrosion reaction afterflush, and it is dried up promptly accomplish the monocrystalline silicon sheet surface texturing.
In the said step (3), said alkaline corrosion liquid is 0.5%～2% alkali lye by mass percent, and percent by volume is that 0.3%～2% isopropyl alcohol and percent by volume are 0.2%～1%, concentration range is 5 * 10
-5～5 * 10
-3The alkyl sulfonic acid saline solution of mol/L is formulated.
Said mass percent is 0.5%～2% alkali lye employing NaOH, potassium hydroxide and sodium carbonate a kind of alkali lye wherein.
In the said step (4), it is the uniform matte of 0.5～8 μ m that the said monocrystalline silicon sheet surface after the texturing forms the pyramid length of side, and the monocrystalline silicon thickness that is corroded is 5～15 μ m.
Said monocrystalline silicon piece adopts P type or N type, and < 100>crystal orientation monocrystalline substrate, resistivity are 0.5～7 Ω cm, and thickness is 180～300 μ m.
The present invention is owing to take above technical scheme; It has the following advantages: 1, the present invention is owing to adopt the mixed liquor is made up of dish detergent and NaOH that monocrystalline silicon piece is carried out ultrasonic cleaning, and the monocrystalline silicon sheet surface after cleaning evenly sprays the G solution of being made up of compositions such as sodium salt, phosphoamide and lactic acid, and puts into alkaline corrosion liquid and corrode; And then realize the monocrystalline silicon sheet surface texturing; The various compositions of its application are with low cost, therefore, realized the characteristics that cost of the present invention is low.2, the present invention is because the mixed liquor that employing is put into 80～90 ℃ of constant temperature being made up of dish detergent and NaOH with monocrystalline silicon piece carries out ultrasonic cleaning; Therefore; Help removing the organic substance of monocrystalline silicon sheet surface and staining of inorganic matter; And the affected layer of monocrystalline silicon sheet surface slightly corroded, reduced the monocrystalline silicon sheet surface activation energy, for the caustic corrosion texturing lays the first stone.3, the present invention is because the monocrystalline silicon sheet surface after being employed in cleaning evenly sprays G solution, and G solution adheres to monocrystalline silicon sheet surface, can effectively reduce the corrosion rate of caustic corrosion liquid to monocrystalline silicon piece.4, to form the pyramid length of side be the uniform matte of 0.5～8 μ m to the monocrystalline silicon sheet surface after the present invention's texturing of processing, and the monocrystalline silicon thickness that is corroded is 5～15 μ m.Therefore, realized on monocrystalline silicon suede, forming even, the less pyramid of size, helped solar absorption.The present invention can be widely used in the area of solar cell.
Description of drawings
Fig. 1 is embodiments of the invention 1 stereoscan photograph sketch mapes;
Fig. 2 is embodiments of the invention 2 stereoscan photograph sketch mapes.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is carried out detailed description.
The present invention adopts corrosive liquid to prepare the monocrystalline silicon sheet surface texturing, and its step is following:
1) preparation is that 0.005%～0.015% dish detergent and concentration are the mixed liquor that 0.015%～0.2% NaOH is formed by concentration in ultrasonic tank; And this mixed liquor is heated to 80～90 ℃ constant temperature; In between this flat-temperature zone monocrystalline silicon piece being carried out the ultrasonic of 1～5min washes down; Help removing the organic substance of monocrystalline silicon sheet surface and staining of inorganic matter like this; And the affected layer of monocrystalline silicon sheet surface slightly corroded, reduce the monocrystalline silicon sheet surface activation energy, for the caustic corrosion texturing lays the first stone;
2) clean up after; Evenly spray G solution at monocrystalline silicon sheet surface; G solution comprises that mass percent is that 1%～5% sodium salt, mass percent are that 0.01%～0.05% phosphoamide and mass percent are compositions such as 0.0015%～0.01% lactic acid; G solution adheres to monocrystalline silicon sheet surface, can effectively reduce the corrosion rate of caustic corrosion liquid to monocrystalline silicon piece;
3) in the thermostatic ultrasonic groove, prepare alkaline corrosion liquid then, be placed on monocrystalline silicon piece in the alkaline corrosion liquid and corrode, its range of reaction temperature is 70～85 ℃, and etching time is 10～25min;
4) corrosion reaction afterflush monocrystalline silicon piece and it is dried up gets final product, and thus, can under ESEM, observing monocrystalline silicon sheet surface, to form the pyramid length of side be the uniform matte of 0.5～8 μ m, and the monocrystalline silicon thickness that is corroded is 5～15 μ m.
Above-mentioned steps 3) in, alkaline corrosion liquid is 0.5%～2% alkali lye by mass percent, and percent by volume is that 0.3%～2% isopropyl alcohol and percent by volume are 0.2%～1%, concentration range is 5 * 10
-5～5 * 10
-3The alkyl sulfonic acid saline solution of mol/L is formulated.Wherein, the alkyl sulfonic acid saline solution can reduce the interface of monocrystalline silicon piece and alkaline corrosion liquid, can strengthen the wettability of monocrystalline silicon piece and alkaline corrosion liquid.
In the foregoing description, mass percent is that 0.5%～2% alkali lye can adopt NaOH or potassium hydroxide or sodium carbonate alkali lye.
In above-mentioned each step, what monocrystalline silicon piece adopted is commercially available P type or N type, and < 100>crystal orientation monocrystalline substrate, resistivity are 0.5～7 Ω cm, and thickness is 180～300 μ m.
Below through several specific embodiments the present invention is further verified.
Embodiment 1: preparation is 0.1% NaOH mixed liquor by the dish detergent of 0.01% concentration and concentration in ultrasonic tank, and mixed liquor is heated to 90 ℃, carries out monocrystalline silicon piece the ultrasonic cleaning of 2.5min.After rinsing well, evenly spray G solution at monocrystalline silicon sheet surface, and preparation alkaline corrosion liquid is in thermostat: mass percent is that 1.5% NaOH, percent by volume are that 1.5% isopropyl alcohol, percent by volume are that 0.5% concentration is 1 * 10
-3The alkyl sulfonic acid saline solution of mol/L, reaction temperature are 75 ℃, and etching time is 18min.The available like this monocrystalline silicon with pyramid matte is observed under ESEM on the surface of this monocrystalline silicon and has been formed uniform pyramid matte, and the pyramidal length of side is about 2 μ m, and corrosion thickness is 12 μ m (as shown in Figure 1).
Embodiment 2: preparation is 0.15% sodium hydroxide solution solution by the dish detergent of 0.015% concentration and concentration in ultrasonic tank, and mixed liquor is heated to 85 ℃, carries out monocrystalline silicon piece the ultrasonic cleaning of 4min.After rinsing well, evenly spray G solution at monocrystalline silicon sheet surface, and at thermostat preparation alkaline corrosion liquid be: mass percent is that 1% NaOH, percent by volume are that 1% isopropyl alcohol, percent by volume are that 0.3% concentration is 1 * 10
-3The alkyl sulfonic acid saline solution of mol/L, reaction temperature are 80 ℃, and etching time is 15min.The available like this monocrystalline silicon with pyramid matte is observed under ESEM on the surface of monocrystalline silicon and has been formed uniform pyramid matte, and the pyramidal length of side is about 1.5 μ m, and corrosion thickness is 10 μ m (as shown in Figure 2).
Above-mentioned each embodiment only is used to explain the present invention; The proportioning of each step and various solution all can change to some extent; On the basis of technical scheme of the present invention; All improvement and equivalents of individual steps and proportioning being carried out according to the principle of the invention all should not got rid of outside protection scope of the present invention.
Claims (5)
1. monocrystaline silicon solar cell surface-texturing method, its step is following:
(1) preparation is that 0.005%～0.015% dish detergent and concentration are the mixed liquor that 0.015%～0.2% NaOH is formed by concentration in ultrasonic tank; And this mixed liquor is heated to 80～90 ℃ constant temperature, monocrystalline silicon piece is carried out the ultrasonic of 1～5min between this flat-temperature zone to wash down;
(2) clean up after, evenly spray G solution at said monocrystalline silicon sheet surface, said G solution comprises that mass percent is that 1%～5% sodium salt, mass percent are that 0.01%～0.05% phosphoamide and mass percent are 0.0015%～0.01% lactic acid;
(3) in the thermostatic ultrasonic groove, prepare alkaline corrosion liquid, be placed on said monocrystalline silicon piece in the said alkaline corrosion liquid and corrode, its range of reaction temperature is 70～85 ℃, and etching time is 10～25min; Said alkaline corrosion liquid is 0.5%～2% alkali lye by mass percent, and percent by volume is that 0.3%～2% isopropyl alcohol and percent by volume are 0.2%～1%, concentration range is 5 * 10
-5～5 * 10
-3The alkyl sulfonic acid saline solution of mol/L is formulated;
(4) the said monocrystalline silicon piece of corrosion reaction afterflush, and it is dried up promptly accomplish the monocrystalline silicon sheet surface texturing.
2. a kind of monocrystaline silicon solar cell surface-texturing method as claimed in claim 1 is characterized in that: said mass percent is 0.5%～2% alkali lye employing NaOH, potassium hydroxide and sodium carbonate a kind of alkali lye wherein.
3. according to claim 1 or claim 2 a kind of monocrystaline silicon solar cell surface-texturing method; It is characterized in that: in the said step (4); It is the uniform matte of 0.5～8 μ m that said monocrystalline silicon sheet surface after the texturing forms the pyramid length of side, and the monocrystalline silicon thickness that is corroded is 5～15 μ m.
4. according to claim 1 or claim 2 a kind of monocrystaline silicon solar cell surface-texturing method, it is characterized in that: said monocrystalline silicon piece adopts P type or N type, and < 100>crystal orientation monocrystalline substrate, resistivity are 0.5～7 Ω cm, and thickness is 180～300 μ m.
5. a kind of monocrystaline silicon solar cell surface-texturing method as claimed in claim 3 is characterized in that: said monocrystalline silicon piece adopts P type or N type, and < 100>crystal orientation monocrystalline substrate, resistivity are 0.5～7 Ω cm, and thickness is 180～300 μ m.
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102312294B (en) * | 2011-09-08 | 2013-11-06 | 浙江向日葵光能科技股份有限公司 | Additive used for monocrystalline silicon wafer alkaline flocking and application method thereof |
| CN103184523B (en) * | 2011-12-27 | 2016-01-27 | 中建材浚鑫科技股份有限公司 | The preparation method of a kind of silicon single crystal Wool-making agent and textured mono-crystalline silicon |
| CN103531656B (en) * | 2013-09-05 | 2016-01-20 | 西南科技大学 | The preparation method of monocrystalline silicon chip of solar cell matte |
| CN103618026B (en) * | 2013-11-11 | 2016-05-04 | 杭州电子科技大学 | A kind of polysilicon micro-nano processing unit (plant) and method of gridding |
| CN108221050B (en) * | 2018-01-19 | 2019-12-31 | 温岭汉德高分子科技有限公司 | Monocrystalline silicon piece with double-peak pyramid suede structure |
| CN109168267A (en) * | 2018-10-25 | 2019-01-08 | 铜陵市超远科技有限公司 | A kind of high-frequency microwave copper-clad plate etch process |
| CN114464685A (en) * | 2021-12-27 | 2022-05-10 | 中建材浚鑫(桐城)科技有限公司 | Preparation method of solar single-crystal PERC cell |
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| CN101423942A (en) * | 2008-11-13 | 2009-05-06 | 蒋冬 | Alkali etch solution and method for preparing monocrystalline silicon pile fabrics |
| CN101431124A (en) * | 2008-12-10 | 2009-05-13 | 宁波尤利卡太阳能科技发展有限公司 | Texture etching method for single crystalline silicon solar cell |
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