CN114464685A - Preparation method of solar single-crystal PERC cell - Google Patents
Preparation method of solar single-crystal PERC cell Download PDFInfo
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- 238000002161 passivation Methods 0.000 claims abstract description 13
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- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 9
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- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000004202 carbamide Substances 0.000 claims abstract description 7
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- 238000005406 washing Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 32
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 24
- 238000009792 diffusion process Methods 0.000 claims description 20
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 16
- 238000005498 polishing Methods 0.000 claims description 16
- 239000007864 aqueous solution Substances 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 150000008052 alkyl sulfonates Chemical class 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 8
- 239000003153 chemical reaction reagent Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 8
- 229910000077 silane Inorganic materials 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 6
- ZAWGLAXBGYSUHN-UHFFFAOYSA-M sodium;2-[bis(carboxymethyl)amino]acetate Chemical compound [Na+].OC(=O)CN(CC(O)=O)CC([O-])=O ZAWGLAXBGYSUHN-UHFFFAOYSA-M 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 230000004927 fusion Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 238000003475 lamination Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 230000004913 activation Effects 0.000 abstract description 3
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 abstract description 2
- 159000000000 sodium salts Chemical class 0.000 abstract description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
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- 239000013043 chemical agent Substances 0.000 description 2
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- 239000004115 Sodium Silicate Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000005518 polymer electrolyte Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- -1 silver-aluminum Chemical compound 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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Abstract
The invention belongs to the technical field of solar cell production and manufacturing, and particularly relates to a preparation method of a solar single crystal PERC cell, which comprises the following steps: cleaning, texturing, diffusing and etching, back passivation, front and back silicon dioxide film making, front and back silicon nitride film making, laser grooving and front and back electrode preparation. According to the invention, oil stains and dirt on the surface of the monocrystalline silicon piece are removed by the washing agent, and then the damaged layer on the surface of the monocrystalline silicon piece is slightly corroded by the sodium hydroxide solution, so that the surface activation energy of the monocrystalline silicon piece can be reduced, a foundation is laid for the texturing of the monocrystalline silicon piece by the corrosion of the alkaline corrosion solution, the surface of the cleaned monocrystalline silicon piece is uniformly sprayed by the mixed solution consisting of the sodium salt of aminotriacetic acid, the carbamide and the lactic acid, the mixed solution can be adhered to the surface of the monocrystalline silicon piece, the corrosion speed of the alkaline corrosion solution on the monocrystalline silicon piece can be effectively reduced, the textured monocrystalline silicon piece can form a pyramid with uniform and small size, and the solar energy absorption is facilitated.
Description
Technical Field
The invention relates to the technical field of solar cell production and manufacturing, in particular to a preparation method of a solar single crystal PERC cell.
Background
The solar cell with low cost and high efficiency is always the focus of people, and the surface texturing of the single crystal silicon solar cell is one of effective means for improving the conversion efficiency of the solar cell at present. Generally, the texturing method is mainly an alkali etching method, wherein various buffer solutions such as isopropanol, ethanol, sodium silicate and the like are added into an alkali etching solution to control the reaction speed so as to obtain a textured surface with a micron-scale pyramid morphology, and the smaller the size of the pyramid morphology is, the more uniform the pyramid morphology is, the stronger the light absorption capacity of monocrystalline silicon is, and the higher the conversion efficiency of the solar cell is.
At present, isopropanol is mainly used as a buffer solution in large-scale solar cell production, and the concentration is usually 5-10%. However, since isopropanol is expensive, highly volatile, and highly used, and requires a continuous solution replenishment during the production process, the cost is increased. While forming uniform small textured surface on the surface of the silicon wafer, the etching thickness is controlled. The thickness of the single crystal silicon corroded by the corrosive liquid is large and difficult to control, and the thickness is thinner and more fragile, so that the production cost is further improved. Therefore, the invention provides a preparation method of a solar single-crystal PERC cell.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a preparation method of a solar single crystal PERC (polymer electrolyte resistance) cell, which solves the problems that the thickness of a single crystal silicon corroded is large, the thickness is difficult to control, the thickness is thinner and more fragile, and the production cost is further improved because isopropanol is used as a corrosive liquid in the conventional solar cell.
(II) technical scheme
The invention specifically adopts the following technical scheme for realizing the purpose:
a preparation method of a solar single crystal PERC cell comprises the following steps:
step A, cleaning: immersing a monocrystalline silicon wafer with the resistivity of 0.5-1.5 omega-cm, the thickness of 180 mu m and the size of 4 multiplied by 4cm2 into washing agent with the concentration of 0.008-0.012% for ultrasonic cleaning for 10min to remove oil stains and dirt on the surface, then adding 30% sodium hydroxide solution, and carrying out water bath treatment at the temperature of 80 ℃ for 20min to remove a damaged layer on the surface;
step B, texturing: then preparing a mixed solution consisting of 2-4% of sodium aminotriacetate, 0.02-0.04% of carbamide and 0.0015-0.01% of lactic acid by mass percent, uniformly spraying the surface of the cleaned monocrystalline silicon piece, preparing an alkaline corrosion solution in a constant-temperature ultrasonic groove, and putting the uniformly sprayed monocrystalline silicon piece into the alkaline corrosion solution to corrode the monocrystalline silicon piece to form a pyramid-shaped surface appearance, wherein the alkaline corrosion solution is prepared from 1-1.5% of KOH, 0.3-2% of isopropanol and 0.5-0.8% of alkyl sulfonate aqueous solution;
step C, diffusion and etching: introducing phosphorus oxychloride to react with the monocrystalline silicon piece, performing high-temperature phosphorus diffusion on the monocrystalline silicon piece to form a PN junction, then putting the phosphorus-diffused monocrystalline silicon piece into an etching cleaning machine, removing phosphorosilicate glass on the front side and the PN junction on the back side of the diffused monocrystalline silicon piece, and using a polishing chemical reagent aqueous solution with the concentration of 2-10 wt% to perform chemical polishing on the back surface of the monocrystalline silicon piece;
step D, back passivation: depositing an aluminum oxide passivation film layer on the back of the monocrystalline silicon piece in an ALD (atomic layer deposition) mode;
step E, silicon dioxide preparation: respectively growing a silicon dioxide tunneling layer with the thickness of 1.2-1.5 nm on the front surface and the back surface of the silicon wafer by adopting a high-temperature rapid thermal oxidation method;
step F, preparing silicon nitride: adopting a plasma enhanced chemical vapor deposition method, wherein the radio frequency is 13.56MHz, the background vacuum of a deposition cavity is better than 1 multiplied by 10 < -3 > Pa, the radio frequency power density is 0.5-1.0W/cm 2, electronic-grade ammonia gas and silane are respectively used as a nitrogen source and a silicon source, the flow ratio of the ammonia gas to the silane is 1: 3-5, the working air pressure is 120-180 Pa, the growth temperature is 220-260 ℃, and a silicon nitride film with the thickness of 80-100 nm is grown on the front surface and the back surface of a monocrystalline silicon wafer;
g, laser grooving and front and back electrode preparation: the method comprises the steps of utilizing a laser fusion principle to conduct local grooving on a back lamination passivation film, preparing front and back electrodes by a screen printing method, wherein the front surface adopts silver paste with a size of 9642B, the back surface adopts aluminum paste with a size of 06E2-B, the back surface is designed to be a printed aluminum wire to achieve double-sided battery design, and the back surface is co-fired in a belt sintering furnace after being printed and dried to form a final finished battery.
Further, in the step B, the reaction temperature of the alkaline corrosive liquid and the monocrystalline silicon piece is 75-85 ℃, and the corrosion time is 15-20 min.
And further, forming a uniform suede with pyramid side length of 2-5 microns on the surface of the single crystal silicon wafer textured in the step B, wherein the thickness of the etched single crystal silicon is 8-10 microns.
Furthermore, the monocrystalline silicon piece selected in the step A is of a P type or an N type, and the concentration range of the alkyl sulfonate aqueous solution in the step B is 5 x 10 < -5 > to 5 x 10 < -3 > mol/L.
Furthermore, in the step C, the diffusion temperature is 850-880 ℃, the diffusion time is 1.5-2 h, and the sheet resistance of the surface after diffusion is 90-120 omega.
Further, the photochemical reagent in the step C is a mixed solution of tetramethylammonium hydroxide and potassium hydroxide, wherein the temperature of the polishing chemical reagent aqueous solution is 75-85 ℃, and the polishing treatment time is 180-360 seconds.
(III) advantageous effects
Compared with the prior art, the invention provides a preparation method of a solar single crystal PERC battery, which has the following beneficial effects:
1. according to the invention, oil stains and dirt on the surface of the monocrystalline silicon piece are removed by the washing agent, and then the damaged layer on the surface of the monocrystalline silicon piece is slightly corroded by the sodium hydroxide solution, so that the surface activation energy of the monocrystalline silicon piece can be reduced, a foundation is laid for the texturing of the monocrystalline silicon piece by the corrosion of the alkaline corrosive liquid, the surface of the cleaned monocrystalline silicon piece is uniformly sprayed by the mixed liquid consisting of the sodium salt of aminotriacetic acid, the carbamide and the lactic acid, the mixed liquid can be adhered to the surface of the monocrystalline silicon piece, the corrosion speed of the alkaline corrosive liquid on the monocrystalline silicon piece can be effectively reduced, the textured monocrystalline silicon piece can form a pyramid with uniform and small size, and the solar energy absorption is facilitated.
2. According to the invention, the back electrode is completed by adopting an aluminum wire printing mode on the back, so that the cost is saved compared with the use of a silver-aluminum electrode, and in addition, the double-sided power generation function is realized.
Drawings
Fig. 1 is a flow chart of a method for manufacturing a solar single crystal PERC cell according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
As shown in fig. 1, a method for manufacturing a solar single crystal PERC cell according to an embodiment of the present invention includes the following steps:
step A, cleaning: immersing a monocrystalline silicon wafer with the resistivity of 0.5 omega-cm, the thickness of 180 mu m and the size of 4 multiplied by 4cm2 into washing agent with the concentration of 0.008 percent for ultrasonic cleaning for 10min to remove oil stains and dirt on the surface, then adding sodium hydroxide solution with the concentration of 30 percent, and carrying out water bath treatment at the temperature of 80 ℃ for 20min to remove a surface damage layer;
step B, texturing: then preparing a mixed solution consisting of 2 mass percent of sodium aminotriacetate, 0.02 mass percent of carbamide and 0.0015 mass percent of lactic acid, uniformly spraying the surface of the cleaned monocrystalline silicon piece, preparing an alkaline corrosive liquid in a constant-temperature ultrasonic groove, and putting the monocrystalline silicon piece uniformly sprayed in the alkaline corrosive liquid to corrode the monocrystalline silicon piece to form a pyramid-shaped surface appearance, wherein the alkaline corrosive liquid is prepared from 1 mass percent of KOH, 0.3 mass percent of isopropanol and 0.5 mass percent of alkyl sulfonate aqueous solution;
step C, diffusion and etching: introducing phosphorus oxychloride to react with the monocrystalline silicon piece, performing high-temperature phosphorus diffusion on the monocrystalline silicon piece to form a PN junction, then putting the phosphorus-diffused monocrystalline silicon piece into an etching cleaning machine, removing phosphorosilicate glass on the front side and the PN junction on the back side of the diffused monocrystalline silicon piece, and using a polishing chemical reagent aqueous solution with the concentration of 2 wt% to perform chemical polishing on the back surface of the monocrystalline silicon piece;
step D, back passivation: depositing an aluminum oxide passivation film layer on the back of the monocrystalline silicon piece in an ALD (atomic layer deposition) mode;
step E, silicon dioxide preparation: respectively growing a silicon dioxide tunneling layer with the thickness of 1.2 on the front surface and the back surface of the silicon wafer by adopting a high-temperature rapid thermal oxidation method;
step F, preparing silicon nitride: adopting a plasma enhanced chemical vapor deposition method, wherein the radio frequency is 13.56MHz, the background vacuum of a deposition cavity is better than 1 multiplied by 10 < -3 > Pa, the radio frequency power density is 0.5W/cm2, electronic-grade ammonia gas and silane are respectively used as a nitrogen source and a silicon source, the flow ratio of the ammonia gas to the silane is 1:3, the working pressure is 120Pa, the growth temperature is 220 ℃, and a silicon nitride film with the thickness of 80nm is grown on the front surface and the back surface of the monocrystalline silicon wafer;
g, laser grooving and front and back electrode preparation: the method comprises the steps of utilizing a laser fusion principle to conduct local grooving on a back lamination passivation film, preparing front and back electrodes by a screen printing method, wherein the front surface adopts silver paste with a size of 9642B, the back surface adopts aluminum paste with a size of 06E2-B, the back surface is designed to be a printed aluminum wire to achieve double-sided battery design, and the back surface is co-fired in a belt sintering furnace after being printed and dried to form a final finished battery.
In some embodiments, the reaction temperature of the alkaline etchant and the monocrystalline silicon wafer in the step B is 75 ℃, and the etching time is 15 min.
In some embodiments, the textured surface of the monocrystalline silicon wafer textured in step B forms a uniform texture with pyramid sides of 2 μm, wherein the thickness of the etched monocrystalline silicon is 8 μm.
In some embodiments, the single crystal silicon wafer selected in step A is of the P-type, and the concentration of the aqueous solution of the alkylsulfonate in step B is in the range of 5X 10-5 mol/L.
In some embodiments, the diffusion temperature in step C is 850 ℃, the diffusion time is 1.5h, and the surface sheet resistance after diffusion is 90 Ω.
In some embodiments, the photochemical agent in step C is a mixture of tetramethylammonium hydroxide and potassium hydroxide, wherein the aqueous polishing chemical agent solution has a temperature of 75 ℃ and a polishing treatment time of 180S.
Example 2
As shown in fig. 1, a method for manufacturing a solar single crystal PERC cell according to an embodiment of the present invention includes the following steps:
step A, cleaning: immersing a monocrystalline silicon wafer with the resistivity of 1.5 omega-cm, the thickness of 180 mu m and the size of 4 multiplied by 4cm2 into a washing agent with the concentration of 0.012 percent for ultrasonic cleaning for 10min to remove oil stains and dirt on the surface, then adding a sodium hydroxide solution with the concentration of 30 percent, and carrying out water bath treatment at the temperature of 80 ℃ for 20min to remove a damaged layer on the surface;
step B, texturing: then preparing a mixed solution consisting of 4 mass percent of sodium aminotriacetate, 0.04 mass percent of carbamide and 0.01 mass percent of lactic acid, uniformly spraying the surface of the cleaned monocrystalline silicon piece, preparing an alkaline corrosive liquid in a constant-temperature ultrasonic groove, and putting the uniformly sprayed monocrystalline silicon piece into the alkaline corrosive liquid to corrode the monocrystalline silicon piece to form a pyramid-shaped surface appearance, wherein the alkaline corrosive liquid is prepared from 1.5 mass percent of KOH, 2 mass percent of isopropanol and 0.8 mass percent of alkyl sulfonate aqueous solution;
step C, diffusion and etching: introducing phosphorus oxychloride to react with the monocrystalline silicon piece, performing high-temperature phosphorus diffusion on the monocrystalline silicon piece to form a PN junction, then putting the phosphorus-diffused monocrystalline silicon piece into an etching cleaning machine, removing phosphorosilicate glass on the front side and the PN junction on the back side of the diffused monocrystalline silicon piece, and using a polishing chemical reagent aqueous solution with the concentration of 10 wt% to perform chemical polishing on the back surface of the monocrystalline silicon piece;
step D, back passivation: depositing an aluminum oxide passivation film layer on the back of the monocrystalline silicon piece in an ALD (atomic layer deposition) mode;
step E, silicon dioxide preparation: respectively growing a silicon dioxide tunneling layer with the thickness of 1.5nm on the front surface and the back surface of the silicon wafer by adopting a high-temperature rapid thermal oxidation method;
step F, preparing silicon nitride: adopting a plasma enhanced chemical vapor deposition method, wherein the radio frequency is 13.56MHz, the background vacuum of a deposition cavity is better than 1 multiplied by 10 < -3 > Pa, the radio frequency power density is 1.0W/cm2, electronic-grade ammonia gas and silane are respectively used as a nitrogen source and a silicon source, the flow ratio of the ammonia gas to the silane is 1:5, the working pressure is 180Pa, the growth temperature is 260 ℃, and a silicon nitride film with the thickness of 100nm is grown on the front surface and the back surface of the monocrystalline silicon wafer;
g, laser grooving and front and back electrode preparation: the method comprises the steps of utilizing a laser fusion principle to conduct local grooving on a back lamination passivation film, preparing front and back electrodes by a screen printing method, wherein the front surface adopts silver paste with a size of 9642B, the back surface adopts aluminum paste with a size of 06E2-B, the back surface is designed to be a printed aluminum wire to achieve double-sided battery design, and the back surface is co-fired in a belt sintering furnace after being printed and dried to form a final finished battery.
In some embodiments, the reaction temperature of the alkaline etchant and the monocrystalline silicon wafer in the step B is 85 ℃ and the etching time is 20 min.
In some embodiments, the textured surface of the monocrystalline silicon wafer in step B forms a uniform texture with pyramid sides of 5 μm, wherein the thickness of the etched monocrystalline silicon is 10 μm.
In some embodiments, the selected single crystal silicon wafer in step A is of the N-type, and the concentration of the aqueous solution of the alkylsulfonate in step B is in the range of 5X 10-3 mol/L.
In some embodiments, the diffusion temperature in step C is 880 ℃, the diffusion time is 2h and the surface sheet resistance after diffusion is 120 Ω.
In some embodiments, the photochemical agent in step C is a mixture of tetramethylammonium hydroxide and potassium hydroxide, wherein the aqueous polishing chemical agent solution has a temperature of 85 ℃ and a polishing treatment time of 360S.
In the preparation method of the solar monocrystalline PERC battery in the embodiments 1-2, oil stains and dirt on the surface of the monocrystalline silicon piece are removed through the washing agent, the damaged layer on the surface of the monocrystalline silicon piece is slightly corroded through the sodium hydroxide solution, so that the surface activation energy of the monocrystalline silicon piece can be reduced, a foundation is laid for texturing of the monocrystalline silicon piece corroded by the alkaline corrosion solution, the surface of the cleaned monocrystalline silicon piece is uniformly sprayed with the mixed solution composed of sodium aminotriacetate, carbamide and lactic acid, the mixed solution can be adhered to the surface of the monocrystalline silicon piece, the corrosion speed of the alkaline corrosion solution on the monocrystalline silicon piece can be effectively reduced, the textured monocrystalline silicon piece can form a pyramid with uniform and small size, and solar energy absorption is facilitated.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. A preparation method of a solar single crystal PERC battery is characterized by comprising the following steps: the method comprises the following steps:
step A, cleaning: immersing a monocrystalline silicon wafer with the resistivity of 0.5-1.5 omega-cm, the thickness of 180 mu m and the size of 4 multiplied by 4cm2 into washing agent with the concentration of 0.008-0.012% for ultrasonic cleaning for 10min to remove oil stains and dirt on the surface, then adding 30% sodium hydroxide solution, and carrying out water bath treatment at the temperature of 80 ℃ for 20min to remove a damaged layer on the surface;
step B, texturing: then preparing a mixed solution consisting of 2-4% of sodium aminotriacetate, 0.02-0.04% of carbamide and 0.0015-0.01% of lactic acid by mass percent, uniformly spraying the surface of the cleaned monocrystalline silicon piece, preparing an alkaline corrosion solution in a constant-temperature ultrasonic groove, and putting the uniformly sprayed monocrystalline silicon piece into the alkaline corrosion solution to corrode the monocrystalline silicon piece to form a pyramid-shaped surface appearance, wherein the alkaline corrosion solution is prepared from 1-1.5% of KOH, 0.3-2% of isopropanol and 0.5-0.8% of alkyl sulfonate aqueous solution;
step C, diffusion and etching: introducing phosphorus oxychloride to react with the monocrystalline silicon piece, performing high-temperature phosphorus diffusion on the monocrystalline silicon piece to form a PN junction, then putting the phosphorus-diffused monocrystalline silicon piece into an etching cleaning machine, removing phosphorosilicate glass on the front side and the PN junction on the back side of the diffused monocrystalline silicon piece, and using a polishing chemical reagent aqueous solution with the concentration of 2-10 wt% to perform chemical polishing on the back surface of the monocrystalline silicon piece;
step D, back passivation: depositing an aluminum oxide passivation film layer on the back of the monocrystalline silicon piece in an ALD (atomic layer deposition) mode;
step E, preparing a film by using silicon dioxide on the front surface and the back surface: respectively growing a silicon dioxide tunneling layer with the thickness of 1.2-1.5 nm on the front surface and the back surface of the silicon wafer by adopting a high-temperature rapid thermal oxidation method;
f, preparing a silicon nitride film on the front surface and the back surface: adopting a plasma enhanced chemical vapor deposition method, wherein the radio frequency is 13.56MHz, the background vacuum of a deposition cavity is better than 1 multiplied by 10 < -3 > Pa, the radio frequency power density is 0.5-1.0W/cm 2, electronic-grade ammonia gas and silane are respectively used as a nitrogen source and a silicon source, the flow ratio of the ammonia gas to the silane is 1: 3-5, the working air pressure is 120-180 Pa, the growth temperature is 220-260 ℃, and a silicon nitride film with the thickness of 80-100 nm is grown on the front surface and the back surface of a monocrystalline silicon wafer;
g, laser grooving and front and back electrode preparation: the method comprises the steps of utilizing a laser fusion principle to conduct local grooving on a back lamination passivation film, preparing front and back electrodes by a screen printing method, wherein the front surface adopts silver paste with a size of 9642B, the back surface adopts aluminum paste with a size of 06E2-B, the back surface is designed to be a printed aluminum wire to achieve double-sided battery design, and the back surface is co-fired in a belt sintering furnace after being printed and dried to form a final finished battery.
2. The method of claim 1, wherein the method comprises: and in the step B, the reaction temperature of the alkaline corrosive liquid and the monocrystalline silicon piece is 75-85 ℃, and the corrosion time is 15-20 min.
3. The method of claim 1, wherein the method comprises: and B, forming a uniform suede with pyramid side length of 2-5 microns on the surface of the textured monocrystalline silicon wafer in the step B, wherein the thickness of the corroded monocrystalline silicon is 8-10 microns.
4. The method of claim 1, wherein the method comprises: the monocrystalline silicon piece selected in the step A is of a P type or an N type, and the concentration range of the alkyl sulfonate aqueous solution in the step B is 5 x 10 < -5 > to 5 x 10 < -3 > mol/L.
5. The method of claim 1, wherein the method comprises: in the step C, the diffusion temperature is 850-880 ℃, the diffusion time is 1.5-2 h, and the square resistance of the surface after diffusion is 90-120 omega.
6. The method of claim 1, wherein the method comprises: and C, the photochemical reagent is a mixed solution consisting of tetramethylammonium hydroxide and potassium hydroxide, wherein the temperature of the aqueous solution of the polishing chemical reagent is 75-85 ℃, and the polishing treatment time is 180-360 seconds.
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| CN111524982A (en) * | 2019-02-01 | 2020-08-11 | 泰州隆基乐叶光伏科技有限公司 | Solar cell |
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| CN102168315A (en) * | 2011-03-14 | 2011-08-31 | 中节能太阳能科技（镇江）有限公司 | Method for texturing surface of monocrystalline silicon solar battery |
| US20130186464A1 (en) * | 2012-01-03 | 2013-07-25 | Shuran Sheng | Buffer layer for improving the performance and stability of surface passivation of silicon solar cells |
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