CN111524982A - Solar cell - Google Patents

Solar cell Download PDF

Info

Publication number
CN111524982A
CN111524982A CN201910105210.XA CN201910105210A CN111524982A CN 111524982 A CN111524982 A CN 111524982A CN 201910105210 A CN201910105210 A CN 201910105210A CN 111524982 A CN111524982 A CN 111524982A
Authority
CN
China
Prior art keywords
film layer
layer
solar cell
type
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910105210.XA
Other languages
Chinese (zh)
Inventor
李华
靳玉鹏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taizhou Longi Solar Technology Co Ltd
Original Assignee
Taizhou Lerri Solar Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taizhou Lerri Solar Technology Co Ltd filed Critical Taizhou Lerri Solar Technology Co Ltd
Priority to CN201910105210.XA priority Critical patent/CN111524982A/en
Publication of CN111524982A publication Critical patent/CN111524982A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The application discloses a solar cell, which comprises a p-type substrate, wherein an n-type doping layer and a front passivation antireflection layer are sequentially arranged on the front side of the p-type substrate, and a back tunneling passivation layer, a p-type doping film layer and a back dielectric film layer are sequentially arranged on the back side of the p-type substrate; a front electrode is formed on the front passivation antireflection layer, penetrates through the front passivation antireflection layer and is in contact with the n-type doping layer; and a back aluminum electrode is formed on the back dielectric film layer, penetrates through the back dielectric film layer and is in contact with the p-type doped film layer. With the reduction of the doping solubility of the p-type doping film layer, the service life of minority carriers of the p-type substrate is not influenced, so that the transverse transmission resistance of the back surface is greatly reduced, and the overall performance of the cell is improved.

Description

Solar cell
Technical Field
The invention relates to the technical field of solar photovoltaic power generation, in particular to a solar cell.
Background
A solar cell is a device that converts solar energy into electrical energy. The solar cell generates carriers by utilizing a photovoltaic principle, and then the carriers are led out by using an electrode to form available electric energy.
Conventional Passivated Emitter Rear and reader cells (PERCs) and Passivated Emitter Rear fully-diffused cells (PERTs) are becoming more and more widely used. However, the recombination rate of the contact region of the back electrode is still high, and the problem of high lateral transfer resistance cannot be solved well at the same time, which seriously hinders the efficiency improvement of the solar cell.
The backside of commercial PERC structures in the market today uses local metal contacts to form the electrodes. The cell structure is arranged on the back surface, and because the lateral transmission is needed when the current is collected, the silicon substrate is not doped, and the resistivity is higher, the lateral transmission resistance is larger, and the efficiency of the solar cell is influenced.
While PERT uses back side diffusion doping, although lateral transfer resistance can be reduced. However, due to the use of silver electrodes and the inevitable high concentration of doping becomes recombination centers, the passivation efficiency is reduced, the minority carrier lifetime is reduced, and the efficiency of the solar cell is reduced.
Disclosure of Invention
In view of the above-mentioned defects or shortcomings in the prior art, it is desirable to provide a solar cell to solve the problems that the PERC resistivity is high, the lateral transfer resistance is high, and the PERT forms recombination centers with the increase of the doping concentration, thereby reducing the passivation efficiency, and reducing the minority carrier lifetime, which affects the efficiency of the solar cell.
The invention provides a solar cell, which comprises a p-type substrate, wherein an n-type doping layer and a front passivation antireflection layer are sequentially arranged on the front surface of the p-type substrate, and a back tunneling passivation layer, a p-type doping film layer and a back dielectric film layer are sequentially arranged on the back surface of the p-type substrate; a front electrode is formed on the front passivation antireflection layer, penetrates through the front passivation antireflection layer and is in contact with the n-type doping layer; and a back aluminum electrode is formed on the back dielectric film layer, penetrates through the back dielectric film layer and is in contact with the p-type doped film layer.
Furthermore, the back aluminum electrode comprises a plurality of aluminum grid lines arranged in parallel.
Further, the width of the aluminum gate line is 50-200 um, and the distance between adjacent aluminum gate lines is 500-2000 um.
Further, the material of the back tunneling passivation layer includes any one of silicon oxide, aluminum oxide, titanium oxide, silicon nitride, silicon oxynitride, silicon carbide, and amorphous silicon.
Further, the thickness of the back tunneling passivation layer is 1-5 nm.
Further, the material of the p-type doped film layer comprises polysilicon.
Further, the material of the p-type doped film layer also comprises amorphous silicon.
Further, the p-type doped film layer is doped with IIIA group elements.
Further, the thickness of the p-type doped film layer is 10-1000 nm.
Further, the doping concentration of the p-type doping film layer is more than 1 × 1018Per cm3。
Further, the material of the back dielectric film layer comprises one or more of silicon oxide, aluminum oxide, titanium oxide, silicon nitride, silicon oxynitride and silicon carbide.
Further, the thickness of the back dielectric film layer is 50-200 nm.
According to the scheme, the p-type doped film layer and the back aluminum electrode are formed on the back of the p-type substrate, aluminum is used as IIIA group elements, and the p-type doped film layer has a certain doping effect, so that the requirement on the self-doping concentration of the p-type doped film layer area can be reduced, the problem of a composite center is solved along with the reduction of the doping solubility, the resistivity is reduced, the transverse transmission resistance is reduced, and the efficiency of the solar cell is improved. In addition, the back tunneling passivation layer and the p-type doped film layer can provide good surface passivation for the solar cell, and the photoelectric conversion efficiency of the solar cell is improved. In addition, with the reduction of the doping solubility of the p-type doping film layer, the service life of minority carriers of the p-type substrate is not influenced, so that the transverse transmission resistance of the back surface is greatly reduced, and the overall performance of the cell is improved.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
fig. 1 is a schematic structural diagram of a solar cell according to an embodiment of the present invention;
fig. 2 is a schematic diagram of an electrode of a solar cell according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a solar cell with another structure according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a solar cell according to another embodiment of the present invention;
fig. 5 is a rear view of a solar cell according to an embodiment of the present invention.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and not restrictive of the invention. It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
As shown in fig. 1-3, the solar cell provided by the present invention includes a p-type substrate 1, wherein the front surface of the p-type substrate 1 is sequentially provided with an n-type doped layer 4 and a front passivation antireflection layer 2, and the back surface of the p-type substrate 1 is sequentially provided with a back tunneling passivation layer 3, a p-type doped film layer 9, and a back dielectric film layer 8; a front electrode 5 is formed on the front passivation antireflection layer 2, and the front electrode 5 penetrates through the front passivation antireflection layer 2 and is in contact with the n-type doped layer 4; the back aluminum electrode 6 is formed on the back dielectric film layer 8, and the back aluminum electrode 6 penetrates through the back dielectric film layer 8 and is in contact with the p-type doped film layer 9.
The front side referred to herein is the side of the solar cell that faces the sun during use, and the back side is the side facing away from the sun.
According to the scheme, the p-type doped film layer 9 and the back aluminum electrode 6 are formed on the back of the p-type substrate 1, aluminum is used as IIIA group elements, and a certain doping effect is achieved on the p-type doped film layer 9, so that the requirement on the self doping concentration of the p-type doped film layer 9 can be lowered, the problem of a recombination center is solved along with the reduction of the doping solubility, the resistivity is lowered, the transverse transmission resistance is reduced, and the efficiency of the solar cell is improved. In addition, the back tunneling passivation layer 3 and the p-type doped film layer 9 can provide good surface passivation for the solar cell, which is beneficial to improving the photoelectric conversion efficiency of the solar cell. In addition, with the reduction of the doping solubility of the p-type doping film layer 9, the minority carrier lifetime of the p-type substrate 1 is not affected, so that the lateral transmission resistance of the back surface is greatly reduced, and the overall performance of the cell is improved.
Further, the back aluminum electrode 6 includes a plurality of aluminum gate lines 14 arranged in parallel, for example, but not limited to, 100 aluminum gate lines 14 are arranged, a plurality of gate connection lines 10 may be connected between the aluminum gate lines 14, and the aluminum gate lines 14 may be perpendicular to the gate connection lines 10.
As an implementation manner, the front electrode 5 may be a plurality of silver gate lines 15 arranged in parallel, a plurality of gate connection lines 7 may be connected between the silver gate lines 15, and the gate connection lines 7 may be perpendicular to the silver gate lines 15.
Further, the width of the aluminum gate lines 14 is 50um to 200um, and the distance between adjacent aluminum gate lines 14 is 500-2000um, so as to improve the electron collecting capability.
As shown in fig. 4 and 5, the aluminum electrode may be a planar electrode 12, and when the planar electrode 12 is used, a plurality of silver electrodes 13 may be uniformly arranged in the planar electrode 12, for example, 16 silver electrodes 13 are arranged in a 4 × 4 arrangement, and the size of each silver electrode may be, for example, 2mm × 20 mm.
Further, the front-side passivated antireflection layer 2 may be a layered structure, for example, including a first film layer and a second film layer arranged in a stacked manner, wherein the first film layer is in contact with the n-type doped layer 4, and the refractive index of the first film layer is greater than that of the second film layer. For example, the first film layer and the second film layer may be made of silicon nitride, the refractive index of the first film layer may be 2.2, the refractive index of the second film layer may be 2.0, and light at a certain angle is incident from the first film layer of the optically dense medium to the second film layer of the optically sparse medium and then is totally reflected, so that the light is reduced and reflected out of the solar cell, the light utilization rate of the solar cell is improved, and the photoelectric conversion capability is further improved. Of course, in addition to the two-layer structure described above, a multilayer structure may be used as long as it can form total reflection between layers to achieve antireflection.
Further, the material of the back side tunneling passivation layer 3 includes any one of silicon oxide, aluminum oxide, titanium oxide, silicon nitride, silicon oxynitride, silicon carbide, and amorphous silicon.
Further, the thickness of the back tunneling passivation layer 3 is 1-5nm, so that the back tunneling passivation layer has good passivation performance.
Further, the material of the p-type doped film layer 9 includes polysilicon.
Further, the material of the p-type doped film layer 9 may also include amorphous silicon.
Further, the p-type doped film layer 9 is doped with group IIIA elements.
Further, the thickness of the p-type doped film layer 9 is 10-1000 nm.
Further, the doping concentration of the p-type doped film layer 9 is greater than 1 × 1018Per cm3。
Further, the material of the back dielectric film layer 8 includes one or more of silicon oxide, aluminum oxide, titanium oxide, silicon nitride, silicon oxynitride, and silicon carbide.
Further, the thickness of the back dielectric film layer 8 is 50-200nm, and the layered structure covered by the back dielectric film layer is well protected.
The following illustrates the fabrication process of the solar cell:
1. the p-type substrate 1 is positively structured.
Specifically, a p-type monocrystalline silicon wafer is taken as a substrate, the front side of the p-type substrate 1 is subjected to texturing by using a KOH-containing solution, and a pyramid textured surface with the height of 2-5 microns is formed to finish front surface texturing. Wherein the concentration of the KOH solution can be 5 percent by weight, and the temperature is 80 ℃. And cleaning with hydrofluoric acid solution, washing with water, and oven drying.
2. A back tunneling passivation layer 3 is formed on the back surface of the p-type substrate 1.
For example, the back tunneling passivation layer 3 may be an amorphous silicon thin layer with a thickness of 5nm, the back p-type doped layer 9 is a mixed film layer of amorphous silicon and polysilicon doped with group III boron, wherein the ratio of polysilicon is 80%, the thickness of the doped film layer is 200nm, and the doping concentration of boron is 8 × 1019/cm3. The thickness of the back tunneling passivation layer 3 can be 1-5 nm.
3. A p-type doped film layer 9 is formed on the back tunneling passivation layer 3.
Specifically, a mixed film layer of amorphous silicon and polysilicon can be deposited on the back tunneling passivation layer 3 by using a low pressure chemical vapor deposition method, wherein the proportion of polysilicon is 80%, the thickness of the mixed film layer of amorphous silicon and polysilicon can be 100nm, 150nm, 200nm, 500nm and the like, the mixed film layer of amorphous silicon and polysilicon is coated by using a boron-containing doping slurry, the whole mixed film layer of amorphous silicon and polysilicon is covered by the boron-containing doping slurry, and the preparation of a back p-type doping film layer 9 is completed by thermal diffusion at 900 ℃ after the boron-containing doping slurry is coated, wherein the doping concentration of boron element is 8 × 1019/cm3. In the process of forming the p-type doped film layer 9, the p-type doped film layer 9 does not need to be doped with high-concentration boron, so that the p-type doped film layer can be in good contact with a subsequent aluminum electrode, and high-temperature promotion is not needed. Thereby reducing the temperature of the process and avoiding the negative effects of a higher temperature thermal process.
4. An n-type doped layer 4 is formed on the front surface of the p-type substrate 1.
An intrinsic polysilicon layer may be deposited on the front surface of the p-type substrate 1 using a low pressure chemical vapor deposition method. POCl through tubular diffusion furnace3And (3) thermally diffusing to form a front PN junction at one time, wherein the whole process condition is 750-840 ℃ and the time is 85 minutes, so that the preparation of the n-type doped layer is completed. The square resistance of the n-type doped layer 4 can beAnd is 150 ohm/sq.
5. A front-side passivated anti-reflection layer 2 is formed on the n-type doped layer 4.
The member formed with the n-type doped layer 4 in the step 4 is sent to a slot type cleaning machine containing hydrofluoric acid to remove borosilicate glass, phosphosilicate glass and multi-edge doping. Then sequentially carrying out NaOH, water washing, hydrofluoric acid washing, deionized water washing and drying. And then SiNx is deposited on the surface of the n-type doped layer 4 as the front passivation antireflection layer 2 by using Plasma Enhanced Chemical Vapor Deposition (PECVD), wherein two layers of SiNx may be deposited, wherein one layer of SiNx is a first film layer having a refractive index of 2.2 and a thickness of 30nm, and the other layer of SiNx is a second film layer having a refractive index of 2.0 and a thickness of 90nm, which are merely examples and are not limited to the invention.
6. And forming a back dielectric film layer 8 on the p-type doped film layer 9.
For example, but not limited to, the back dielectric film Layer 8 may be a composite film Layer, i.e., 5-15nm of aluminum oxide may be deposited by Atomic Layer Deposition (ALD) as a back passivation Layer, e.g., 5nm, 10nm, or 15nm, on the p-type doped film Layer, and then the back passivation Layer is deposited by PECVD with 60-90nm thick silicon nitride, e.g., 70nm, 85nm, 150nm, etc. The refractive index of silicon nitride may be 2.10.
7. And (4) preparing an electrode.
And etching the back dielectric film layer 8 by laser and the like to form a back aluminum electrode pattern, and coating an electrode slurry layer containing a conductive component on the back aluminum electrode pattern by a screen printing method, wherein the electrode slurry layer can be aluminum-containing slurry. Then, the metal is processed in a sintering furnace to form corresponding electrodes, wherein the electrodes may include a back aluminum electrode and a gate connecting line 10, the back aluminum electrode includes a plurality of aluminum gate lines 14 arranged in parallel, and the like.
And etching the front passivation antireflection layer 2 by laser and the like to form a front electrode pattern, and coating an electrode slurry layer containing a conductive component at the front electrode by a screen printing method, wherein the electrode slurry layer can be silver-containing slurry. And then, carrying out metallization heat treatment on the silver alloy material in a sintering furnace to form corresponding electrodes, wherein the electrodes can comprise front electrodes and grid connecting wires 7, and the front electrodes comprise a plurality of silver grid wires 15 arranged in parallel.
The back aluminum electrode may be an aluminum electric field, except for the aluminum gate line 14. During manufacturing, a back silver electrode pattern and an aluminum electrode connection hole 11 are first formed on the back dielectric film layer 8 by etching with a laser or the like, the silver electrode pattern may be a hole exposing the p-type doped film layer 9, for example, 16 holes are arranged in a 4 × 4 arrangement, and the size of each hole may be, for example, about 2mm × 20 mm. The silver-containing paste is applied to the hole, and then the aluminum-containing paste is applied to the back dielectric film layer 8 except the silver-containing paste, the aluminum-containing paste is also filled in the aluminum electrode connecting hole, and then the metallization heat treatment is performed, and the heating peak temperature of the metallization heat treatment may be 400-750 ℃, for example, the preferred heating peak temperature is 650 ℃, so as to form the silver electrode 13.
The above description is only a preferred embodiment of the application and is illustrative of the principles of the technology employed. It will be appreciated by those skilled in the art that the scope of the invention herein disclosed is not limited to the particular combination of features described above, but also encompasses other arrangements formed by any combination of the above features or their equivalents without departing from the inventive concept. For example, the above features may be replaced with (but not limited to) features having similar functions disclosed in the present application.

Claims (12)

1. A solar cell is characterized by comprising a p-type substrate, wherein an n-type doping layer and a front passivation antireflection layer are sequentially arranged on the front side of the p-type substrate, and a back tunneling passivation layer, a p-type doping film layer and a back dielectric film layer are sequentially arranged on the back side of the p-type substrate; a front electrode is formed on the front passivation antireflection layer, penetrates through the front passivation antireflection layer and is in contact with the n-type doping layer; and a back aluminum electrode is formed on the back dielectric film layer, penetrates through the back dielectric film layer and is in contact with the p-type doped film layer.
2. The solar cell of claim 1, wherein the back side aluminum electrode comprises a plurality of aluminum gridlines arranged in parallel.
3. The solar cell as claimed in claim 2, wherein the width of the aluminum grid lines is 50um to 200um, and the distance between adjacent aluminum grid lines is 500 um to 2000 um.
4. The solar cell according to any of claims 1-3, wherein the material of the back side tunneling passivation layer comprises any of silicon oxide, aluminum oxide, titanium oxide, silicon nitride, silicon oxynitride, silicon carbide, and amorphous silicon.
5. The solar cell according to any of claims 1-3, wherein the back side tunneling passivation layer has a thickness of 1-5 nm.
6. The solar cell according to any of claims 1-3, wherein the material of the p-type doped film layer comprises polysilicon.
7. The solar cell of claim 6, wherein the material of the p-type doped film layer further comprises amorphous silicon.
8. The solar cell of claim 6, wherein the p-type doped film layer is doped with a group IIIA element.
9. The solar cell of claim 6, wherein the p-type doped film layer has a thickness of 10-1000 nm.
10. The solar cell of claim 8, wherein the p-type doped film layer has a doping concentration greater than 1 × 1018Per cm3。
11. The solar cell according to any one of claims 1-3, wherein the material of the backside dielectric film layer comprises one or more of silicon oxide, aluminum oxide, titanium oxide, silicon nitride, silicon oxynitride, and silicon carbide.
12. The solar cell of claim 11, wherein the thickness of the back dielectric film layer is 50-200 nm.
CN201910105210.XA 2019-02-01 2019-02-01 Solar cell Pending CN111524982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910105210.XA CN111524982A (en) 2019-02-01 2019-02-01 Solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910105210.XA CN111524982A (en) 2019-02-01 2019-02-01 Solar cell

Publications (1)

Publication Number Publication Date
CN111524982A true CN111524982A (en) 2020-08-11

Family

ID=71900693

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910105210.XA Pending CN111524982A (en) 2019-02-01 2019-02-01 Solar cell

Country Status (1)

Country Link
CN (1) CN111524982A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112201701A (en) * 2020-09-30 2021-01-08 浙江晶科能源有限公司 Solar cell and photovoltaic module
CN114464685A (en) * 2021-12-27 2022-05-10 中建材浚鑫(桐城)科技有限公司 Preparation method of solar single-crystal PERC cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112201701A (en) * 2020-09-30 2021-01-08 浙江晶科能源有限公司 Solar cell and photovoltaic module
CN114464685A (en) * 2021-12-27 2022-05-10 中建材浚鑫(桐城)科技有限公司 Preparation method of solar single-crystal PERC cell

Similar Documents

Publication Publication Date Title
JP6353039B2 (en) Method for manufacturing crystalline silicon solar cell
US8481847B2 (en) Solar cell and method of manufacturing the same
EP3916814B1 (en) Photovoltaic module, solar cell, and method for producing solar cell
US10084107B2 (en) Transparent conducting oxide for photovoltaic devices
KR101000064B1 (en) Hetero-junction silicon solar cell and fabrication method thereof
CN104752562A (en) Preparation method of local boron back surface passive field solar cell
WO2023093604A1 (en) Solar cell and preparation method for solar cell
CN111063761A (en) Preparation process of solar cell
TWI639241B (en) Photovoltaic element and method of producing the same
CN111524982A (en) Solar cell
KR101198430B1 (en) Bifacial Photovoltaic Localized Emitter Solar Cell and Method for Manufacturing Thereof
KR101181625B1 (en) Localized Emitter Solar Cell and Method for Manufacturing Thereof
CN112542519A (en) Solar cell and preparation method thereof
CN220543926U (en) Solar cell and photovoltaic module
CN219371038U (en) Solar cell back structure and N-TBC back contact solar cell
CN216311815U (en) TBC solar cell
KR101199213B1 (en) Bifacial Photovoltaic Localized Emitter Solar Cell and Method for Manufacturing Thereof
KR101199649B1 (en) Localized Emitter Solar Cell and Method for Manufacturing Thereof
KR101114198B1 (en) Localized emitter solar cell and method for manufacturing thereof
KR101173399B1 (en) Localized Emitter Solar Cell and Method for Manufacturing Thereof
CN111599874A (en) Back contact solar cell
KR101212491B1 (en) Method for manufacturing solar cell
KR101212489B1 (en) Method for manufacturing solar cell
CN111599873A (en) Back contact solar cell
CN114695594A (en) Preparation method of back contact battery and back contact battery

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination