CN114695594A - Preparation method of back contact battery and back contact battery - Google Patents
Preparation method of back contact battery and back contact battery Download PDFInfo
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- CN114695594A CN114695594A CN202011611876.1A CN202011611876A CN114695594A CN 114695594 A CN114695594 A CN 114695594A CN 202011611876 A CN202011611876 A CN 202011611876A CN 114695594 A CN114695594 A CN 114695594A
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- 238000002360 preparation method Methods 0.000 title abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 59
- 239000010703 silicon Substances 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000009792 diffusion process Methods 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 claims abstract description 20
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- 238000000576 coating method Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 154
- 229910052698 phosphorus Inorganic materials 0.000 claims description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 13
- 239000011574 phosphorus Substances 0.000 claims description 13
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- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000011241 protective layer Substances 0.000 claims description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 4
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- 239000007864 aqueous solution Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000002161 passivation Methods 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
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- 239000002253 acid Substances 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
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- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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Abstract
The application provides a preparation method of a back contact cell and the back contact cell, wherein the preparation method comprises the steps of carrying out surface treatment on a silicon substrate, and preparing a front side doping source layer and a back side doping source layer on the surfaces of two sides of the silicon substrate; then, diffusing, and simultaneously forming a front surface field layer, a first doping layer and a second doping layer; and then, sequentially cleaning, coating and metalizing the silicon substrate. According to the preparation method, the back side doping source layer and the front side doping source layer are prepared in the back side partial area and the front side of the silicon substrate, and the preparation of the first doping layer, the second doping layer and the front surface field layer can be completed simultaneously through one-time diffusion, so that the process is simplified, the equipment requirement and the production cost are reduced, the preparation period of the cell is shortened, and the yield of the cell is improved.
Description
Technical Field
The application relates to the technical field of solar cell production, in particular to a back contact cell and a preparation method thereof.
Background
With the rapid development of the photovoltaic industry, the requirements of domestic and foreign markets on the efficiency and performance of solar cells are higher and higher, which also promotes a plurality of manufacturers to actively research novel cell structures and production processes so as to obtain industrial advantages. The back contact (IBC) cell is a solar cell in which P and N regions are formed on the back surface of the cell in a cross arrangement, and can completely avoid optical loss caused by shielding of a front electrode grid line, and maximally use incident light to improve a short-circuit current, and has received much attention in recent years.
The surface of the conventional back contact cell is usually formed with three doped regions: the solar cell comprises a cell front passivation region, an emitter region and a back field region on the back of the cell, wherein for an N-type silicon substrate, the emitter region is a P-type doped layer, and the front passivation region and the back field region are N-type doped layers. In the conventional preparation method, three times of diffusion are adopted to respectively prepare three different doped layers, so that the process is complex, the time consumption is long, and the production cost is increased. The proposal that the front phosphorus diffusion is carried out firstly and then the mode of co-diffusion of phosphorus slurry and boron slurry is adopted to simultaneously prepare the back emitting region and the back field region is disclosed in the industry; however, the process of the scheme is still complex, the performance and the manufacturing process of the boron slurry product are not stable enough at present, the cost is high, and the mass production and popularization are difficult.
In view of the above, there is a need for a new method for manufacturing a back contact battery and a back contact battery.
Disclosure of Invention
The invention aims to provide a preparation method of a back contact battery and the back contact battery, which can simplify the process flow, improve the yield and reduce the production cost.
In order to achieve the above object, the present application provides a method for manufacturing a back contact battery, which mainly comprises:
carrying out surface treatment on the silicon substrate;
preparing a front side doping source layer and a back side doping source layer on the surfaces of two sides of a silicon substrate, wherein the silicon substrate is provided with a first area corresponding to the back side doping source layer and a second area adjacent to the first area;
diffusing to enable the front surface of the silicon substrate to form a front surface field layer, forming a first doping layer with the doping type consistent with that of the front surface field layer on the back surface of the first region, and forming a second doping layer with the doping type opposite to that of the first doping layer on the back surface of the second region;
and sequentially cleaning, coating and metalizing.
As a further improvement of the embodiment of the present application, the front side doping source layer and the back side doping source layer contain the same doping element, and the doping element content in the front side doping source layer is lower than that in the back side doping source layer.
As a further improvement of the embodiment of the present application, the front surface doping source layer and the back surface doping source layer are obtained by using a predetermined slurry and performing screen printing, and the printing thickness of the front surface doping source layer is smaller than that of the back surface doping source layer; or the concentration of the doping element in the slurry adopted by the front doped source layer is smaller than that of the doping element in the slurry adopted by the back doped source layer.
As a further improvement of the embodiment of the application, the thickness of each of the front doped source layer and the back doped source layer is set to be 0.5-2 μm.
As a further improvement of the embodiment of the present application, the silicon substrate is an N-type silicon wafer, and the doping elements in the front surface field layer and the first doping layer are phosphorus; and the doping element in the second doping layer is boron.
As a further improvement of the embodiment of the present application, the phosphorus concentration in the front side doping source layer is 0.1% to 5%; the phosphorus concentration in the back side doping source layer is 5% -15%.
As a further improvement of the embodiments of the present application, the reaction gas employed in the diffusion step includes BBr3(ii) a The diffusion step comprises a first diffusion stage, a second diffusion stage and a third diffusion stage, wherein the temperature of the first diffusion stage is set to 860-1050 ℃, the temperature of the second diffusion stage is set to 960-1300 ℃, and the temperature of the third diffusion stage is set to 860-1050 ℃.
As a further improvement of the embodiment of the application, the temperatures of the first diffusion stage, the second diffusion stage and the third diffusion stage are set to be 940-980 ℃.
As a further improvement of the embodiment of the present application, after the diffusion is completed, a trench is opened on the back surface of the silicon substrate, so that the adjacent first doping layer and the second doping layer are spaced from each other.
As a further improvement of the embodiment of the application, the width of the groove is set to be 30-200 μm; the depth of the groove is set to be 1-10 mu m.
As a further improvement of the embodiment of the present application, the step of "forming a trench on the back surface of the silicon substrate" includes preparing a protective layer on the back surface of the silicon substrate; removing the protective layer at the set position on the back surface of the silicon substrate by adopting a laser windowing method; and carrying out wet etching to obtain the groove.
As a further improvement of the embodiment of the present application, the "surface treatment" step includes firstly performing double-sided alkaline texturing on the silicon substrate by using an aqueous solution of KOH, NaOH or TMAH; and polishing the back surface of the silicon substrate.
The application also provides a back contact battery prepared by the preparation method.
The beneficial effect of this application is: by adopting the preparation method of the back contact cell and the back contact cell, the back doped source layer and the front doped source layer are respectively prepared on the back partial area and the front surface of the silicon substrate, and the preparation of the first doped layer, the second doped layer and the front surface field layer can be simultaneously completed through one-time diffusion, so that the process is simplified, the equipment requirement and the production cost are reduced, the cell preparation period is shortened, and the cell yield is improved.
Drawings
Fig. 1 is a schematic diagram of the structure of a back contact cell of the present application;
fig. 2 is a schematic main flow chart of the method for manufacturing the back contact cell of the present application;
FIG. 3 is a schematic diagram of the back contact cell of the present application illustrating the formation of front and back dopant source layers on the surface of the back contact cell;
fig. 4 is a schematic view of the state of the back-contact cell of the present application when preparing a protective layer.
100-back contact cell; 1-a silicon substrate; 11-a first doped layer; 12-a second doped layer; 13-a trench; 14-front surface field layer; 2-back passivation layer; 3-an anti-reflection layer; 41-a first electrode; 42-a second electrode; 101-a front side doping source layer; 102-a back side doping source layer; 103-protective layer.
Detailed Description
The present invention will be described in detail below with reference to embodiments shown in the drawings. The present invention is not limited to the embodiment, and structural, methodological, or functional changes made by one of ordinary skill in the art according to the embodiment are included in the scope of the present invention.
Referring to fig. 1, a back contact cell 100 provided by the present application includes a silicon substrate 1, wherein a first doping layer 11 and a second doping layer 12 are formed on a back surface of the silicon substrate 1 at intervals, and doping types of the first doping layer 11 and the second doping layer 12 are opposite; a trench 13 located between the adjacent first doping layer 11 and the second doping layer 12 is further formed on the back surface of the silicon substrate 1 in a recessed manner, so that the first doping layer 11 is electrically isolated from the second doping layer 12.
In the embodiment, the silicon substrate 1 is an N-type silicon wafer, the resistivity of the silicon substrate 1 is set to be 0.3-7 omega-cm, and the thickness of the silicon wafer is 50-300 mu m; the first doped layer 11 is an N-type doped layer, the second doped layer 12 is a P-type doped layer, and the first doped layer 11 and the second doped layer 12 are respectively used as a field passivation region and an emitter region. Typically, the area fraction of the first doped layer 11 is smaller than the area fraction of the second doped layer 12.
The front surface of the silicon substrate 1 is further formed with a front surface field layer 14, and the front surface field layer 14 is used for improving the front surface passivation performance. Here, the first doping layer 11 and the front surface field layer 14 are both phosphorus doping layers, the doping concentration of the front surface field layer 14 is less than the doping concentration of the first doping layer 11, and the doping concentration of the first doping layer 11 is preferably 1E21 to 3E21cm-3(ii) a The second doped layer 12 is a boron doped layer, and the doping concentration of the second doped layer 12 is preferably setIs 1E 19-3E 19cm-3。
The thickness of the first doped layer 11 is set to be 0.1-1 μm, and the thickness of the second doped layer 12 is set to be 0.5-2 μm. The depth of the groove 13 is larger than the thicknesses of the first doping layer 11 and the second doping layer 12, and the depth of the groove 13 is set to be 1-10 μm. The width of the groove 13 is set to be 30-200 μm, and if the width is too small, the electrical isolation effect between the adjacent first doping layer 11 and the second doping layer 12 is affected, the processing difficulty of the groove 13 is increased, and the subsequent film deposition at the position of the groove 13 is difficult and the passivation effect is poor; on the other hand, too large a width of the trench 13 affects an area ratio of an emission region, reducing carrier collection efficiency. For example, the depth of the trench 13 may be set to 2 μm, 5 μm, 8 μm, and the like; the width of the trench 13 is set to 30 μm, 50 μm, 80 μm, 150 μm, or the like.
The back contact cell 100 further includes a back passivation layer 2 disposed on the back surface of the silicon substrate 1, an anti-reflection layer 3 disposed on the front surface field layer 14, and a metal electrode penetrating the back passivation layer 3 and contacting the silicon substrate 1.
The back passivation layer 2 comprises at least one of an aluminum oxide film, a silicon nitride film and a silicon carbide film. The antireflection layer 3 may be a silicon nitride film, and the film performance and the antireflection effect of the antireflection layer 3 may be improved by adjusting process parameters such as gas flow, reaction time, and temperature. The back passivation layer 2 and the antireflection layer 3 can be set into a composite film or a gradient film according to actual product requirements. Illustratively, the back passivation layer 2 includes an aluminum oxide film and a silicon nitride film stacked on the aluminum oxide film, the aluminum oxide film has a thickness of 2 to 10nm, and the silicon nitride film has a thickness of 50 to 100 nm. The metal electrodes include a first electrode 41 in contact with the first doped layer 11 and a second electrode 42 in contact with the second doped layer 12, and the first electrode 41 and the second electrode 42 are obtained by screen printing and sintering a predetermined conductive paste, and the conductive pastes used in the first electrode 41 and the second electrode 42 may be the same or different.
As shown in fig. 2 to fig. 4, the present application further provides a method for manufacturing the back contact battery 100, which mainly includes:
performing surface treatment on the silicon substrate 1;
preparing a front side doping source layer 101 and a back side doping source layer 102 on the two side surfaces of a silicon substrate 1, wherein the silicon substrate 1 is provided with a first area corresponding to the back side doping source layer 102 and a second area adjacent to the first area;
diffusing to enable the front surface of the silicon substrate 1 to form a front surface field layer 14, forming a first doping layer 11 with the same doping type as the front surface field layer 14 on the back surface of the first region, and forming a second doping layer 12 with the opposite doping type to the first doping layer 11 on the back surface of the second region;
forming a groove 13 on the back surface of the silicon substrate 1, wherein the groove 13 extends along the boundary between the first doping layer 11 and the second doping layer 12, so that the first doping layer 11 and the second doping layer 12 which are adjacent to each other are spaced;
and cleaning, plating and metalizing are sequentially carried out to obtain the back contact battery 100.
The surface treatment step comprises the steps of firstly, carrying out double-sided alkaline texturing on the silicon substrate 1 by using KOH or NaOH or TMAH aqueous solution; and polishing the back surface of the silicon substrate 1. In the texturing process, a pyramid textured structure with a set height can be formed on the surface of the silicon substrate 1 through adjustment of solution concentration, temperature and reaction time, and a set texturing additive can be added according to product requirements to improve the quality of textured surfaces; in the polishing process, the back surface of the silicon substrate 1 is polished by an alkali solution or an acid solution, and the front surface of the silicon substrate 1 is usually protected by a water film in the polishing process.
The front doped source layer 101 and the back doped source layer 102 contain the same doping element. The front doped source layer 101 and the back doped source layer 102 are obtained by adopting a set slurry and screen printing, and the thicknesses of the front doped source layer 101 and the back doped source layer 102 are set to be 0.5-2 μm.
In order to make the doping concentration of the front surface field layer 14 less than that of the first doping layer 11, the doping element content in the front surface doping source layer 101 needs to be lower than that in the back surface doping source layer 102. In practical production, the printing thickness of the front doping source layer 102 can be set to be smaller than that of the back doping source layer 102; or different pastes are respectively printed to form the front doped source layer 101 and the back doped source layer 102, wherein the concentration of the doping element in the paste used by the front doped source layer 101 is less than that in the paste used by the back doped source layer 102. Here, the phosphorus concentration in the front surface doping source layer 101 is 0.1% to 5%; the phosphorus concentration in the back side doping source layer 102 is 5% -15%.
The reaction gas employed in the diffusion step comprises BBr3(ii) a The diffusion step comprises a first diffusion stage, a second diffusion stage and a third diffusion stage, wherein the first diffusion stage refers to a stage of diffusing B atoms into the silicon substrate 1, the temperature is set to be 860-1050 ℃, the second diffusion stage is a diffusion advancing stage, the B atoms and P atoms in the front surface doping source layer 101 and the back surface doping source layer 102 are enabled to advance towards the inside of the silicon substrate 1, the junction depth is increased, and the temperature is set to be 960-1300 ℃; the third diffusion stage is mainly to form BSG on the back surface of the second region of the silicon substrate 1, namely the B enrichment region, through oxidation to reduce surface recombination and O2And oxidizing and taking away residual phosphorus slurry, so that subsequent cleaning is facilitated, and the temperature of the stage is set to 860-1050 ℃. Preferably, the temperatures of the first diffusion stage, the second diffusion stage and the third diffusion stage are set to be 940-980 ℃.
After the diffusion is finished, the surface of the silicon substrate 1 needs to be cleaned, and residual phosphorus-containing slurry is removed; the preparation of the trench 13 is then carried out. The step of forming the groove 13 on the back surface of the silicon substrate 1 includes preparing a protective layer 103 on the back surface of the silicon substrate 1; removing the protective layer 103 at the set position on the back surface of the silicon substrate 1 by adopting a laser windowing method; and performing wet etching to obtain the trench 13. Wherein, the protection layer 103 can be a silicon oxide film, and the thickness thereof can be set to 10-200 μm; the laser wavelength used for laser windowing is set to be 280-1000 nm, and laser beams with the wavelengths of 355nm, 515nm, 532nm and the like can be specifically used for laser windowing.
Cleaning and drying the silicon substrate 1, and then coating a film, wherein the aluminum oxide film can be prepared by an ALD method or a PECVD method through deposition; the silicon nitride film is prepared by a PECVD method. The metallization step is to obtain a given electrode pattern on the back passivation layer 2 by screen printing, and to obtain a corresponding metal electrode by high-temperature sintering. Here, the first electrode 41 and the second electrode 42 can adopt silver paste with the same specification, so that the production and the preparation are convenient; the conductive paste can be obtained by adopting different conductive pastes for printing respectively and sintering according to the product requirements.
Of course, the preparation method may further include the steps of testing, grading, and anti-fading processing the back contact battery 100 after the metallization process is completed, and details are not repeated here.
In summary, in the method for manufacturing the back contact cell 100 of the present application, the front doped source layer 101 and the back doped source layer 102 are manufactured, and the first doped layer 11, the second doped layer 12 and the front surface field layer 14 can be simultaneously manufactured through one-time diffusion, so that the process is simplified, the equipment requirement and the production cost are reduced, the cell manufacturing period is shortened, the cell yield is improved, and the method is beneficial to industrial popularization and application.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above-listed detailed description is only a specific description of a possible embodiment of the present invention, and they are not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention should be included in the scope of the present invention.
Claims (13)
1. A method for preparing a back contact battery is characterized in that:
carrying out surface treatment on the silicon substrate;
preparing a front side doping source layer and a back side doping source layer on the surfaces of two sides of a silicon substrate, wherein the silicon substrate is provided with a first area corresponding to the back side doping source layer and a second area adjacent to the first area;
diffusing to enable the front surface of the silicon substrate to form a front surface field layer, forming a first doping layer with the doping type consistent with that of the front surface field layer on the back surface of the first region, and forming a second doping layer with the doping type opposite to that of the first doping layer on the back surface of the second region;
and sequentially cleaning, coating and metalizing.
2. The method of claim 1, wherein: the front doped source layer and the back doped source layer contain the same doping element, and the doping element content in the front doped source layer is lower than that in the back doped source layer.
3. The method of claim 2, wherein: the front surface doping source layer and the back surface doping source layer are obtained by adopting set slurry and screen printing, and the printing thickness of the front surface doping source layer is smaller than that of the back surface doping source layer; or the concentration of the doping element in the slurry adopted by the front doped source layer is smaller than that of the doping element in the slurry adopted by the back doped source layer.
4. The production method according to any one of claims 1 to 3, characterized in that: the thickness of the front doped source layer and the thickness of the back doped source layer are both set to be 0.5-2 mu m.
5. The method of claim 1, wherein: the silicon substrate is an N-type silicon wafer, and doping elements in the front surface field layer and the first doping layer are phosphorus; and the doping element in the second doping layer is boron.
6. The method of claim 5, wherein: the concentration of phosphorus in the front doped source layer is 0.1% -5%; the phosphorus concentration in the back side doping source layer is 5% -15%.
7. The method of claim 5, wherein: the reaction gas employed in the diffusion step comprises BBr3(ii) a The diffusion step comprises a first diffusion stage, a second diffusion stage and a third diffusion stage, wherein the temperature of the first diffusion stage is set to 860-1050 ℃, the temperature of the second diffusion stage is set to 960-1300 ℃, and the temperature of the third diffusion stage is set to 860-1050 ℃.
8. The method of claim 7, wherein: the temperatures of the first diffusion stage, the second diffusion stage and the third diffusion stage are set to be 940-980 ℃.
9. The method of claim 1, wherein: and after the diffusion is finished, forming a groove on the back surface of the silicon substrate, so that the adjacent first doping layer and the second doping layer are spaced.
10. The method of claim 9, wherein: the width of the groove is set to be 30-200 mu m; the depth of the groove is set to be 1-10 mu m.
11. The method of claim 9, wherein: the step of forming the groove on the back surface of the silicon substrate comprises the step of preparing a protective layer on the back surface of the silicon substrate; removing the protective layer at the set position on the back of the silicon substrate by adopting a laser windowing method; and carrying out wet etching to obtain the groove.
12. The production method according to claim 1, characterized in that: the surface treatment step comprises the steps of firstly, carrying out double-sided alkaline texturing on a silicon substrate by using KOH or NaOH or TMAH aqueous solution; and polishing the back surface of the silicon substrate.
13. A back contact battery, comprising: the back contact battery is manufactured by the manufacturing method according to any one of claims 1 to 12.
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| CN115692548A (en) * | 2022-11-24 | 2023-02-03 | 通威太阳能（成都）有限公司 | Solar cell and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102246324A (en) * | 2008-11-12 | 2011-11-16 | 矽利康有限公司 | Back contact photovoltaic solar cells with grooves |
| CN103794679A (en) * | 2014-01-26 | 2014-05-14 | 晶澳（扬州）太阳能科技有限公司 | Method for manufacturing back contact solar cell |
| CN108987503A (en) * | 2018-07-11 | 2018-12-11 | 泰州隆基乐叶光伏科技有限公司 | A kind of finger-like intersection back contacts solar cell and preparation method thereof with area of isolation |
| CN112133793A (en) * | 2020-10-12 | 2020-12-25 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Back-junction back-contact solar cell and manufacturing method thereof |
| CN114765224A (en) * | 2020-12-30 | 2022-07-19 | 苏州阿特斯阳光电力科技有限公司 | Back contact battery and preparation method thereof |
-
2020
- 2020-12-30 CN CN202011611876.1A patent/CN114695594A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102246324A (en) * | 2008-11-12 | 2011-11-16 | 矽利康有限公司 | Back contact photovoltaic solar cells with grooves |
| CN103794679A (en) * | 2014-01-26 | 2014-05-14 | 晶澳（扬州）太阳能科技有限公司 | Method for manufacturing back contact solar cell |
| CN108987503A (en) * | 2018-07-11 | 2018-12-11 | 泰州隆基乐叶光伏科技有限公司 | A kind of finger-like intersection back contacts solar cell and preparation method thereof with area of isolation |
| CN112133793A (en) * | 2020-10-12 | 2020-12-25 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Back-junction back-contact solar cell and manufacturing method thereof |
| CN114765224A (en) * | 2020-12-30 | 2022-07-19 | 苏州阿特斯阳光电力科技有限公司 | Back contact battery and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 周国华;施正荣;朱拓;吴俊;梅晓东;姚海燕;: "太阳能电池背表面钝化的研究", 能源工程, no. 01, pages 17 - 20 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115692548A (en) * | 2022-11-24 | 2023-02-03 | 通威太阳能（成都）有限公司 | Solar cell and preparation method thereof |
| WO2024108989A1 (en) * | 2022-11-24 | 2024-05-30 | 通威太阳能（成都）有限公司 | Solar cell and preparation method therefor |
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