CN112133793A - Back-junction back-contact solar cell and manufacturing method thereof - Google Patents
Back-junction back-contact solar cell and manufacturing method thereof Download PDFInfo
- Publication number
- CN112133793A CN112133793A CN202011085618.4A CN202011085618A CN112133793A CN 112133793 A CN112133793 A CN 112133793A CN 202011085618 A CN202011085618 A CN 202011085618A CN 112133793 A CN112133793 A CN 112133793A
- Authority
- CN
- China
- Prior art keywords
- layer
- doped
- protective layer
- boron
- phosphorus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 239000010410 layer Substances 0.000 claims abstract description 125
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 68
- 239000010703 silicon Substances 0.000 claims abstract description 68
- 239000011241 protective layer Substances 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000004140 cleaning Methods 0.000 claims abstract description 14
- 239000011574 phosphorus Substances 0.000 claims abstract description 13
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052796 boron Inorganic materials 0.000 claims abstract description 6
- 238000000059 patterning Methods 0.000 claims abstract description 5
- 238000002161 passivation Methods 0.000 claims description 19
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 239000000243 solution Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 238000002791 soaking Methods 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000008569 process Effects 0.000 description 19
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- -1 phosphorus ions Chemical class 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for manufacturing a back-junction back-contact solar cell, which comprises the following steps: after forming a first intrinsic silicon layer on the back surface of the N-type silicon substrate, carrying out boron doping on the first intrinsic silicon layer to form a boron-doped layer; after forming a first protective layer on the boron-doped layer, patterning the first protective layer and the boron-doped layer to form a patterned groove so as to expose a partial area of the back surface; forming a second intrinsic silicon layer in the patterned groove, and enabling the second intrinsic silicon layer to be in contact with a partial region of the back surface; phosphorus doping is carried out on the second intrinsic silicon layer to form a phosphorus-doped layer; after a second protective layer is formed on the phosphorus-doped layer, cleaning unnecessary doped regions on the front side and the side face of the N-type silicon substrate; and after removing the first protective layer and the second protective layer, respectively forming electrodes on the boron-doped layer and the phosphorus-doped layer. The invention also discloses a back junction back contact solar cell. The invention solves the problem that when the unnecessary doped region is etched, the target doped region is damaged due to the circumfluence of the cleaning solution.
Description
Technical Field
The invention relates to the technical field of solar cell manufacturing, in particular to a method for manufacturing a cell capable of reducing the possibility of pn junction damage.
Background
An important step in the fabrication of silicon solar cells is the step of doping the silicon substrate to form a heterojunction. However, due to the limitations of the existing doping process itself, it is not guaranteed that the doped impurities only diffuse within the target region. It can thus be found in the actual doping process that the doped impurities diffuse not only in the target region (for example the front side) but also on other surfaces of the silicon substrate (for example the back side or the side), so that unnecessary doped regions are formed.
If the unnecessary doped region remains, the photo-generated electrons collected on the front side of the solar cell are directly transmitted to the back side of the solar cell along the unnecessary doped region, thereby causing an internal short circuit of the solar cell, and thus it is necessary to remove the unnecessary doped region.
At present, alkaline solutions are generally used to etch the back and sides of the silicon substrate when removing the unnecessary doped regions. However, in this process, the alkali solution may flow around to other surfaces of the silicon substrate, thereby possibly damaging the target doping region.
Disclosure of Invention
Aiming at the technical problems, the invention adopts the following technical scheme:
in one aspect of the present invention, a method for fabricating a back contact back junction solar cell is provided, the method comprising:
after a first intrinsic silicon layer is formed on the back surface of the N-type silicon substrate, boron doping is carried out on the first intrinsic silicon layer to form a boron-doped layer;
after forming a first protective layer on the boron-doped layer, patterning the first protective layer and the boron-doped layer to form a patterned groove so as to expose a partial area of the back surface;
forming a second intrinsic silicon layer in the patterned groove, and enabling the second intrinsic silicon layer to be in contact with a partial region of the back surface;
phosphorus doping is carried out on the second intrinsic silicon layer to form a phosphorus-doped layer;
after a second protective layer is formed on the phosphorus-doped layer, cleaning unnecessary doped regions on the front side and the side face of the N-type silicon substrate;
and after removing the first protective layer and the second protective layer, respectively forming electrodes on the boron-doped layer and the phosphorus-doped layer.
Preferably, before removing the first protective layer and the second protective layer, the manufacturing method includes:
phosphorus doping the front surface to form a surface field region;
forming a third protective layer on the surface field region;
cleaning an unnecessary doped region on the side surface of the N-type silicon substrate;
and removing the third protective layer.
Preferably, after removing the third protective layer, the manufacturing method further includes: and sequentially forming a first passivation layer and an anti-reflection layer on the surface field region.
Preferably, before forming the electrode, the manufacturing method further includes: and forming a second passivation layer on the boron-doped layer and the phosphorus-doped layer.
Preferably, the method of forming the electrodes on the boron-doped layer and the phosphorus-doped layer, respectively, comprises:
printing silver paste containing a corrosive solvent on the second passivation layer, and enabling the silver paste to be in contact with the boron-doped layer and the phosphorus-doped layer after being etched through the second passivation layer;
curing the silver paste to form the electrode.
Preferably, before forming the first intrinsic silicon layer on the back surface of the N-type silicon substrate, the method further includes:
forming a tunnel oxide layer on the back surface of the N-type silicon substrate;
wherein the first intrinsic silicon layer is formed after the tunnel oxide layer is formed and on the tunnel oxide layer.
Preferably, the first, second, and third protective layers are made of silicon dioxide or silicon nitride.
Preferably, the method of cleaning the unnecessary doped region comprises:
and soaking the N-type silicon substrate provided with the second protective layer and/or the third protective layer in 6-18% of sodium hydroxide solution at room temperature for 80-120 seconds.
Preferably, before forming the first intrinsic silicon layer on the back surface of the N-type silicon substrate, the method further includes:
soaking the N-type silicon substrate in a mixed solution of 2-5% by volume of sodium hydroxide or potassium hydroxide solution and deionized water for polishing; wherein the temperature of the mixed solution is 70-80 ℃, and the polishing time is 3-5 minutes.
In another aspect of the invention, a back junction back contact solar cell is provided, which is manufactured by the above manufacturing method.
When the manufacturing method provided by the invention is adopted to manufacture the solar cell, the protective layer is arranged on the target doping region after doping, so that the situation that the target doping region is damaged by the cleaning liquid flowing around can be prevented when the unnecessary doping region is cleaned, and the production quality of the back-junction back-contact solar cell is further improved.
Drawings
Fig. 1 is a flow chart of a method of fabricating a back junction back contact solar cell according to an embodiment of the present invention;
fig. 2a to 2f are process diagrams of a back contact back junction solar cell according to an embodiment of the invention;
fig. 3a to 3d are process diagrams of a back contact back junction solar cell according to another embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings and described in accordance with the drawings are exemplary only, and the invention is not limited to these embodiments. It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the scheme according to the present invention are shown in the drawings, and other details not so relevant to the present invention are omitted.
Further, it will be understood that by the front surface of the silicon substrate is meant the surface of the silicon substrate that will become the light receiving surface; the back surface of the silicon substrate refers to a surface of the silicon substrate which is opposite to the front surface and is to be a backlight surface; the side surface of the silicon substrate refers to a surface of the silicon substrate for connecting the front surface and the back surface.
As described in the background, the conventional solar cell manufacturing method has a risk of damaging the target doped region during the actual manufacturing process.
In view of the above technical problems, embodiments according to the present invention provide a method for fabricating a solar cell capable of reducing the possibility of damage to a target doped region, as follows.
Example 1
The present embodiment provides a method for manufacturing a back junction back contact solar cell, as shown in fig. 1 and fig. 2a to 2f, the method includes:
step S1, after forming a first intrinsic silicon layer on the back surface 1b of the N-type silicon substrate 1, boron doping is performed on the first intrinsic silicon layer to form a boron-doped layer 2. Specifically, an intrinsic amorphous silicon or intrinsic polysilicon material with a thickness of 80nm to 200nm is grown on the back surface 1b by using a chemical vapor deposition process to form a first intrinsic silicon layer.
Step S2, after forming the first protection layer 3 on the boron-doped layer 2, patterning the first protection layer 3 and the boron-doped layer 2 to form a patterned trench a, so as to expose a partial region of the back surface 1 b. Specifically, a silicon nitride material with a thickness of 40nm to 80nm is formed on the boron-doped layer 2 by using a chemical vapor deposition process to form the first protection layer 3, and then the first protection layer 3 and the boron-doped layer 2 are patterned by using a laser etching process to form the patterned trench a so as to expose a partial region of the back surface 1 b.
Step S3, forming a second intrinsic silicon layer in the patterned trench a, and contacting the second intrinsic silicon layer with a partial region of the back surface 1 b. Specifically, a chemical vapor deposition process is adopted to deposit intrinsic amorphous silicon or intrinsic polycrystalline silicon material with the thickness of 80 nm-200 nm in the patterning groove A so as to form the second intrinsic silicon layer.
Step S4, doping the second intrinsic silicon layer with phosphorus by using an ion implantation process to form a phosphorus-doped layer 4. Specifically, the amount of phosphorus ions implanted was 1 × 1015cm-2～8×1015cm-2The acceleration voltage of the phosphorus ions is 5 to 16 Kv.
Step S5, after forming the second protection layer 5 on the phosphorus-doped layer 4, cleaning the unnecessary doped regions on the front surface 1a and the side surfaces of the N-type silicon substrate 1. Specifically, a chemical vapor deposition process is adopted to form a silicon nitride material with the thickness of 40 nm-80 nm on the phosphorus-doped layer 4 so as to form the second protective layer 5; and then, etching the unnecessary doped regions on the front surface 1a and the side surfaces of the N-type silicon substrate 1 by using an alkaline solution so as to remove the unnecessary doped regions.
Step S6, after removing the first protective layer 3 and the second protective layer 5, forming electrodes 6 on the boron-doped layer 2 and the phosphorus-doped layer 4, respectively. Specifically, the first protective layer 3 and the second protective layer 5 are removed by using a hydrofluoric acid solution; and then, forming the electrodes 6 on the boron-doped layer 2 and the phosphorus-doped layer 4 respectively by using a printing process.
According to the specific manufacturing steps of this embodiment, it can be confirmed that, when the solar cell is manufactured by using the manufacturing method of this embodiment, since the protective layer is disposed on the target doped region after doping, when cleaning the unnecessary doped region, the situation that the target doped region is damaged due to the cleaning liquid flowing around can be prevented. Therefore, the manufacturing method provided by the embodiment is beneficial to improving the production quality of the back junction back contact solar cell.
Preferably, in order to reduce the recombination rate of photogenerated carriers on the front surface 1a of the battery, in this embodiment, before removing the first protective layer 3 and the second protective layer 5, the manufacturing method includes:
step S51, phosphorus doping the front surface 1a to form a surface field region B. Specifically, as shown in FIG. 3a, an ion implantation process is used for the positive electrodeThe face 1a is phosphorus-doped to form the surface field region B. Wherein the amount of phosphorus ions implanted is 5 × 1015cm-2～12×1015cm-2The acceleration voltage of the phosphorus ions is 6 to 12 Kv.
Step S52, forming a third protective layer on the surface field region B. Specifically, a chemical vapor deposition process is adopted to form a silicon nitride material with a thickness of 40nm to 80nm on the phosphorus-doped layer 4 so as to form the third protective layer.
And step S53, cleaning the unnecessary doped region on the side surface of the N-type silicon substrate 1.
And step S54, removing the third protective layer. Specifically, a hydrofluoric acid solution is used to etch the third protective layer.
Further, as shown in fig. 3B, after the surface field region B is formed, the manufacturing method further includes: a first passivation layer 7 and an anti-reflection layer 8 are sequentially stacked on the surface field region B. Specifically, a chemical vapor deposition process is adopted, a silicon dioxide material with the thickness of 80nm to 100nm is deposited on the surface field region B to form the first passivation layer 7, and a silicon nitride material layer with the thickness of 90nm to 150nm is deposited on the first passivation layer 7 to form the anti-reflection layer 8. The passivation film can further reduce the carrier recombination rate of the front surface 1a of the battery, and the antireflection film can reduce the reflectivity of sunlight so as to improve the photoelectric conversion efficiency of the battery.
Furthermore, in order to improve the passivation effect of the back surface of the battery, as shown in fig. 3c, in this embodiment, before forming the electrode 6, the manufacturing method further includes: a second passivation layer 9 is formed on the boron doped layer 2 and the phosphorus doped layer 4. Specifically, a chemical vapor deposition process is adopted to deposit a silicon nitride material with a thickness of 70nm to 80nm on the boron-doped layer 2 and the phosphorus-doped layer 4, so as to form a second passivation layer 9. After the second passivation layer 9 is formed, in order to contact the subsequently formed electrode 6 with the boron doped layer 2 and the phosphorus doped layer 4, as shown in fig. 3d, in this embodiment, a silver paste containing a corrosive solvent is printed on the second passivation layer 9. The corrosive solvent contains hydrofluoric acid, so that the silver paste can be contacted with the boron-doped layer 2 and the phosphorus-doped layer 4 after being etched through the second passivation layer 9. The silver paste is then cured to form the electrode 6.
Specifically, in this embodiment, the method for cleaning the unnecessary doped region includes:
and soaking the N-type silicon substrate 1 provided with the second protective layer 5 and/or the third protective layer in a sodium hydroxide solution with the volume ratio of 6-18% at room temperature for 80-120 seconds.
More specifically, in order to remove the damaged layer and the impurity on the surface of the N-type silicon substrate 1, in this embodiment, before forming the first intrinsic silicon layer on the back surface 1b of the N-type silicon substrate 1, the manufacturing method further includes:
and soaking the N-type silicon substrate 1 in a mixed solution of 2-5% by volume of sodium hydroxide or potassium hydroxide solution and deionized water for polishing. Wherein the temperature of the mixed solution is 70-80 ℃, and the polishing time is 3-5 minutes.
Example 2
Unlike embodiment 1, in order to further reduce the recombination rate of photogenerated carriers on the back surface, in this embodiment, a tunnel oxide layer is formed on the back surface of the N-type silicon substrate before the first intrinsic silicon layer is formed on the back surface of the N-type silicon substrate. The first intrinsic silicon layer is formed on the tunnel oxide layer after the formation of the tunnel oxide layer. Correspondingly, after the first protection layer and the boron-doped layer are subsequently patterned, the patterned grooves expose partial areas of the tunnel oxide layer; and the second intrinsic silicon layer formed subsequently is in contact with a partial region of the tunnel oxide layer, namely, the tunnel oxide layer is arranged between the N-type silicon substrate and the patterned pn junction (namely, the phosphorus-doped layer and the boron-doped layer), so that the photon-generated electrons are directly transferred to the emitter through a tunneling effect, the recombination rate of photon-generated carriers on the back is reduced, and the photoelectric conversion efficiency of the cell is improved.
Example 3
This example provides a back junction back contact solar cell fabricated using the fabrication method of example 1 or example 2.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (9)
1. A method for manufacturing a back junction back contact solar cell, the method comprising:
after a first intrinsic silicon layer is formed on the back surface of the N-type silicon substrate, boron doping is carried out on the first intrinsic silicon layer to form a boron-doped layer;
after forming a first protective layer on the boron-doped layer, patterning the first protective layer and the boron-doped layer to form a patterned groove so as to expose a partial area of the back surface;
forming a second intrinsic silicon layer in the patterned groove, and enabling the second intrinsic silicon layer to be in contact with a partial region of the back surface;
phosphorus doping is carried out on the second intrinsic silicon layer to form a phosphorus-doped layer;
after a second protective layer is formed on the phosphorus-doped layer, cleaning unnecessary doped regions on the front side and the side face of the N-type silicon substrate;
and after removing the first protective layer and the second protective layer, respectively forming electrodes on the boron-doped layer and the phosphorus-doped layer.
2. The fabrication method according to claim 1, wherein before removing the first protective layer and the second protective layer, the fabrication method comprises:
phosphorus doping the front surface to form a surface field region;
forming a third protective layer on the surface field region;
cleaning an unnecessary doped region on the side surface of the N-type silicon substrate;
and removing the third protective layer.
3. The method of claim 2, wherein after removing the third passivation layer, the method further comprises: and sequentially forming a first passivation layer and an anti-reflection layer on the surface field region.
4. The method of manufacturing of any of claims 1 to 3, wherein prior to forming the electrode, the method of manufacturing further comprises: and forming a second passivation layer on the boron-doped layer and the phosphorus-doped layer.
5. The method of claim 4, wherein the forming the electrodes on the boron-doped layer and the phosphorus-doped layer respectively comprises:
printing silver paste containing a corrosive solvent on the second passivation layer, and enabling the silver paste to be in contact with the boron-doped layer and the phosphorus-doped layer after being etched through the second passivation layer;
curing the silver paste to form the electrode.
6. The manufacturing method according to claim 2, wherein the first protective layer, the second protective layer, and the third protective layer are made of silicon dioxide or silicon nitride.
7. The method of claim 1 or 2, wherein the step of cleaning the non-essential doped region comprises:
and soaking the N-type silicon substrate provided with the second protective layer and/or the third protective layer in 6-18% of sodium hydroxide solution at room temperature for 80-120 seconds.
8. The method of fabricating of claim 1, wherein prior to forming the first intrinsic silicon layer on the backside of the N-type silicon substrate, the method further comprises:
soaking the N-type silicon substrate in a mixed solution of 2-5% by volume of sodium hydroxide or potassium hydroxide solution and deionized water for polishing; wherein the temperature of the mixed solution is 70-80 ℃, and the polishing time is 3-5 minutes.
9. A back junction back contact solar cell, wherein the back junction back contact solar cell is manufactured by the manufacturing method of any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011085618.4A CN112133793A (en) | 2020-10-12 | 2020-10-12 | Back-junction back-contact solar cell and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011085618.4A CN112133793A (en) | 2020-10-12 | 2020-10-12 | Back-junction back-contact solar cell and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112133793A true CN112133793A (en) | 2020-12-25 |
Family
ID=73852596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011085618.4A Pending CN112133793A (en) | 2020-10-12 | 2020-10-12 | Back-junction back-contact solar cell and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112133793A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114695593A (en) * | 2020-12-30 | 2022-07-01 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of back contact battery and back contact battery |
| CN114695594A (en) * | 2020-12-30 | 2022-07-01 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of back contact battery and back contact battery |
| CN114765224A (en) * | 2020-12-30 | 2022-07-19 | 苏州阿特斯阳光电力科技有限公司 | Back contact battery and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101587922A (en) * | 2009-07-08 | 2009-11-25 | 中电电气（南京）光伏有限公司 | Etching method of solar battery silicon chip edges and reverse diffusion layer |
| CN103681963A (en) * | 2013-11-29 | 2014-03-26 | 奥特斯维能源（太仓）有限公司 | Back-junction back-contact crystalline silicon solar cell manufacturing method |
| CN106575676A (en) * | 2014-07-17 | 2017-04-19 | 光城公司 | Solar cell with interdigitated back contact |
| US20190097078A1 (en) * | 2016-03-07 | 2019-03-28 | Stichting Energieonderzoek Centrum Nederland | Solar cell with doped polysilicon surface areas and method for manufacturing thereof |
| CN110459638A (en) * | 2019-06-05 | 2019-11-15 | 国家电投集团西安太阳能电力有限公司 | Topcon passivated IBC battery and preparation method thereof |
| CN111490105A (en) * | 2019-10-22 | 2020-08-04 | 国家电投集团西安太阳能电力有限公司 | Preparation method of N-type interdigital back contact solar cell |
-
2020
- 2020-10-12 CN CN202011085618.4A patent/CN112133793A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101587922A (en) * | 2009-07-08 | 2009-11-25 | 中电电气（南京）光伏有限公司 | Etching method of solar battery silicon chip edges and reverse diffusion layer |
| CN103681963A (en) * | 2013-11-29 | 2014-03-26 | 奥特斯维能源（太仓）有限公司 | Back-junction back-contact crystalline silicon solar cell manufacturing method |
| CN106575676A (en) * | 2014-07-17 | 2017-04-19 | 光城公司 | Solar cell with interdigitated back contact |
| US20190097078A1 (en) * | 2016-03-07 | 2019-03-28 | Stichting Energieonderzoek Centrum Nederland | Solar cell with doped polysilicon surface areas and method for manufacturing thereof |
| CN110459638A (en) * | 2019-06-05 | 2019-11-15 | 国家电投集团西安太阳能电力有限公司 | Topcon passivated IBC battery and preparation method thereof |
| CN111490105A (en) * | 2019-10-22 | 2020-08-04 | 国家电投集团西安太阳能电力有限公司 | Preparation method of N-type interdigital back contact solar cell |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114695593A (en) * | 2020-12-30 | 2022-07-01 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of back contact battery and back contact battery |
| CN114695594A (en) * | 2020-12-30 | 2022-07-01 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of back contact battery and back contact battery |
| CN114765224A (en) * | 2020-12-30 | 2022-07-19 | 苏州阿特斯阳光电力科技有限公司 | Back contact battery and preparation method thereof |
| CN114695593B (en) * | 2020-12-30 | 2024-05-14 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of back contact battery and back contact battery |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8802972B2 (en) | Photoelectric conversion device and manufacturing method thereof | |
| CN110518088B (en) | Preparation method of SE solar cell | |
| US20200212230A1 (en) | Leakage pathway layer for solar cell | |
| CA2716402C (en) | Solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation | |
| JP2022501837A (en) | Crystalline silicon solar cell and its manufacturing method | |
| CN108666393B (en) | Solar cell and preparation method thereof | |
| US20120000517A1 (en) | Solar cell and method for manufacturing the same | |
| CN110838536A (en) | Back contact solar cell with various tunnel junction structures and preparation method thereof | |
| US20120171806A1 (en) | Method for making solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation | |
| CN114678446A (en) | Low-cost contact passivation full-back electrode solar cell and preparation method thereof | |
| CN111668345A (en) | Solar cell and preparation method thereof | |
| CN112133793A (en) | Back-junction back-contact solar cell and manufacturing method thereof | |
| JP2006516830A (en) | Improved photovoltaic cell and its manufacture | |
| CN112635592A (en) | Solar cell and manufacturing method thereof | |
| CN114497290A (en) | Manufacturing method of back contact heterojunction solar cell | |
| KR101768907B1 (en) | Method of fabricating Solar Cell | |
| US9685581B2 (en) | Manufacturing method of solar cell | |
| CN111599895A (en) | Preparation method of crystalline silicon solar passivated contact cell | |
| TWM527159U (en) | Heterojunction solar cell | |
| CN112736163B (en) | Preparation method of polycrystalline silicon thin film passivation back electrode interdigital solar cell | |
| CN112133774A (en) | Back-junction back-contact solar cell and manufacturing method thereof | |
| CN115020508A (en) | Full back contact solar cell and manufacturing method thereof | |
| WO2012162905A1 (en) | Method for manufacturing back contact crystalline silicon solar cell sheet | |
| CN112582484A (en) | Solar cell and manufacturing method thereof | |
| KR20140022507A (en) | Back contact type hetero-junction solar cell and method of fabricating the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20201225 |