CN103681963A - Back-junction back-contact crystalline silicon solar cell manufacturing method - Google Patents
Back-junction back-contact crystalline silicon solar cell manufacturing method Download PDFInfo
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- CN103681963A CN103681963A CN201310620189.XA CN201310620189A CN103681963A CN 103681963 A CN103681963 A CN 103681963A CN 201310620189 A CN201310620189 A CN 201310620189A CN 103681963 A CN103681963 A CN 103681963A
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- 238000009792 diffusion process Methods 0.000 claims abstract description 25
- 239000002002 slurry Substances 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 14
- 230000008021 deposition Effects 0.000 claims abstract description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 12
- 239000011574 phosphorus Substances 0.000 claims abstract description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052796 boron Inorganic materials 0.000 claims abstract description 10
- 239000011521 glass Substances 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 25
- 239000011248 coating agent Substances 0.000 claims description 22
- 238000000576 coating method Methods 0.000 claims description 22
- 238000007639 printing Methods 0.000 claims description 14
- 238000005498 polishing Methods 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 abstract description 7
- 238000000059 patterning Methods 0.000 abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 24
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 239000000126 substance Substances 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000011259 mixed solution Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910015845 BBr3 Inorganic materials 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 2
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of solar energy, in particular to a back-junction back-contact crystalline silicon solar cell manufacturing method on the basis of the conventional field. The method includes steps of selecting a silicon wafer, making single textured surface, performing boron diffusion on the back surface, performing mask diffusion and deposition on the back, patterning the back locally, performing phosphorus diffusion on both sides, removing dielectric film and phosphorosilicate glass, performing dielectric film deposition on both front surface and back surface, perforating the dielectric film, performing silk-screen printing to contact slurry of the back surface and then sintering. As the positive electrode and the negative electrode of the back-junction back-contact crystalline silicon solar cell are both manufactured on the back surface of the silicon wafer, light shielding area is reduced effectively, photo-generated current is increased, and utilization of the solar cell is improved.
Description
Technical field
The present invention relates to solar cell field, especially a kind of manufacture method of carrying on the back knot back of the body contact crystalline silicon solar cell.
Background technology
Solar cell can directly change into electric energy by solar energy, is the effective means of utilizing solar energy resources, owing in use can not producing harmful substance, so solar cell is gaining great popularity aspect solution energy and environment problem, has fabulous market prospects.It is the optimal energy that solar energy is also described as, and is to solve the valuable source that human society is depended on for existence and development.
The solar cell material of main flow is to do substrate with P type silicon at present, spreads to form P-N tie by high temperature phosphorous.Yet in P type crystal silicon battery acceptor boron oxygen on impact there is the phenomenon of photo attenuation, and N-type silicon materials are with respect to P type silicon materials, because it is to less boron oxygen pair in metal impurities and the insensitive while body of many nonmetal defects, so will be higher than P type crystal silicon battery in the stability of performance.The minority carrier life time of N-type battery is higher simultaneously, and this lays a good foundation for preparing more efficient solar cell.
Back of the body knot back of the body contact solar cell started to enter people's sight line as far back as 1977, be still up to now the focus of solar cell industry research.With respect to conventional silion cell, the back of the body knot back of the body contacts the with the obvious advantage of solar cell, mainly can show the following aspects: (1) back of the body knot back of the body contact solar cell is usingd N-type crystalline silicon as substrate, minority carrier life time is high, be applicable to prepare high-efficiency battery, be specially adapted in this p-n knot of back of the body knot back of the body contact solar cell at the surperficial battery structure of the back of the body, because result from the photo-generated carrier of front surface, must move to battery and carry on the back surperficial p-n junction and just can be utilized, higher minority carrier life time is to reduce photo-generated carrier compound assurance in solar battery surface and body; Therefore (2) the boron content of N-type matrix is extremely low, does not have P mold base material obvious by boron oxygen to the photo attenuation causing, more obvious to encapsulating the improved efficiency of rear assembly; (3) front of back of the body knot back of the body contact solar cell does not have electrode, has reduced shading-area, has increased photogenerated current, the back side that is distributed in battery of the positive and negative electrode submission finger-like of battery; (4) carry on the back knot back of the body contact solar cell and be easy to encapsulation, compare with conventional batteries, without the negative pole of front a slice intersection being received to the positive pole of rear a slice, easy operating.
But we,, when making back of the body knot back of the body contact battery, tend to, because the limitation of technical merit cannot be isolated N+/P+ well, easily cause the electric leakage of solar cell tunnel junction, affect the fail safe that battery is used.
Summary of the invention
For the problem and shortage of above-mentioned existing existence, the object of this invention is to provide a kind of step simple, can effectively isolate again the back of the body knot back of the body contact crystalline silicon solar cell manufacture method of N+/P+.
For achieving the above object, the technical solution used in the present invention is a kind of back of the body knot back of the body contact crystalline silicon solar cell manufacture method, it is characterized in that, comprises step:
(a) prepare: the silicon substrate material that selection needs;
(b) one texture-etching side, single-sided polishing: the front surface of silicon substrate is done to making herbs into wool and process, polishing is carried out in its back of the body surface;
(c) back of the body surface boron diffusion;
(d) back side diffusion mask deposition: adopt printing or PECVD mode at silicon substrate backside deposition deielectric-coating;
(e) back panel region pattern: adopt laser or printing corrosivity slurry boring method to silicon substrate back side perforate P type and N-type region;
(f) two-sided phosphorus diffusion: silicon substrate is carried out to phosphorus diffusion, make it form front-surface field and the back of the body surface field of the contact of the back of the body knot back of the body;
(g) remove deielectric-coating and phosphorosilicate glass;
(h) front surface and back of the body surface dielectric film deposition;
(i) carry on the back the perforate of contact area deielectric-coating: the mode of employing laser or printing corrosivity slurry realizes the perforate of back side contact area deielectric-coating;
(j) printing, sintering.
The diffusion of boron described in step (c), its diffused sheet resistance is 70-200 Ω/sq;
Deielectric-coating described in step (d), its thickness is 100-150nm;
The described perforate of step (e), its width is 100-500um;
The diffusion of phosphorus described in step (f), its diffused sheet resistance is 50-100 Ω/sq;
Step (h) front surface and back of the body surface dielectric film deposition, adopt PECVD mode to deposit, and described back of the body surface dielectric film deposit thickness is 60-100nm, and front surface deielectric-coating deposit thickness is 60-100nm;
The perforate of step described in (i), can adopt Merck boring method or employing to burn the perforate of type Metal slurry specific surface.
Wherein, step (e) if in use printing corrosivity slurry mode silicon substrate back side perforate P type and N-type region, can economize and (i) carry on the back this step of contact area deielectric-coating perforate.
Described deielectric-coating is SiO
2, one or more in SiNx or SiC are laminated.
Compared with prior art, the present invention, by simplifying manufacture craft, by the method in silicon substrate back panel region pattern P type, N-type region, not only can save N+/P+ interface and isolate this step, increases work efficiency; And patterning P type, N-type region can guarantee its isolation effect, avoid the electric leakage of battery tunnel junction, improve battery security.
Accompanying drawing explanation
Fig. 1 is solar battery structure schematic diagram;
Fig. 2 is step (a) structural representation;
Fig. 3 is step (d) structural representation;
Fig. 4 is step (e) structural representation;
Fig. 5 is step (f) structural representation;
Fig. 6 is (i) structural representation of step;
Fig. 7 is step (j) structural representation; .
Embodiment
1, a back of the body knot back of the body contact crystalline silicon solar cell manufacture method, is characterized in that, comprises step:
(a) prepare: the silicon substrate material that selection needs;
(b) one texture-etching side, single-sided polishing: the front surface of silicon substrate is done to making herbs into wool and process, polishing is carried out in its back of the body surface;
(c) back of the body surface boron diffusion;
(d) back side diffusion mask deposition: adopt printing or PECVD mode at silicon substrate backside deposition deielectric-coating;
(e) back panel region pattern: adopt laser or printing corrosivity slurry boring method to silicon substrate back side perforate P type and N-type region;
(f) two-sided phosphorus diffusion: silicon substrate is carried out to phosphorus diffusion, make it form front-surface field and the back of the body surface field of the contact of the back of the body knot back of the body;
(g) remove deielectric-coating and phosphorosilicate glass;
(h) front surface and back of the body surface dielectric film deposition;
(i) carry on the back the perforate of contact area deielectric-coating: the mode of employing laser or printing corrosivity slurry realizes the perforate of back side contact area deielectric-coating;
(j) printing, sintering.
The diffusion of boron described in step (c), its diffused sheet resistance is 70-200 Ω/sq;
Deielectric-coating described in step (d), its thickness is 100-150nm;
The described perforate of step (e), its width is 100-500um;
The diffusion of phosphorus described in step (f), its diffused sheet resistance is 50-100 Ω/sq;
Step (h) front surface and back of the body surface dielectric film deposition, adopt PECVD mode to deposit, and described back of the body surface dielectric film deposit thickness is 60-100nm, and front surface deielectric-coating deposit thickness is 60-100nm;
The perforate of step described in (i), can adopt Merck boring method or employing to burn the perforate of type Metal slurry specific surface.
Described deielectric-coating is SiO
2, one or more in SiNx or SiC are laminated.
The preparation method of the silicon heterogenous battery of above-mentioned Novel back knot back of the body contact crystal structure N type is as follows:
Select N type silicon substrate, and the resistivity of N type silicon substrate is at 3ohm*cm, minority carrier life time is greater than 300us;
Adopt sodium hydroxide solution to carry out polished backside to N type monocrystalline substrate, the mixed solution with hydrochloric acid and hydrofluoric acid after polishing completes carries out chemical cleaning; The concentration of sodium hydroxide solution is 10%; In hydrochloric acid and hydrofluoric acid mixed solution, hydrochloric acid: hydrofluoric acid proportioning is 1:2.5; The concentration of hydrochloric acid and hydrofluoric acid mixed solution is 1.1%;
Use BBr3 to carry out back side High temperature diffusion as boron source, temperature is 940 ℃, time 110min, and it is 160 Ω/sq that sheet resistance requires;
Adopt the method for PCVD to prepare overleaf the silicon nitride film that 130nm is thick;
Adopt the method for Merck perforate to realize back side patterning in coated surface perforate, form P type and the N-type region of back of the body knot back of the body contact battery, aperture widths is 200 μ m, and carries out chemical cleaning;
Use diffusion furnace tube to carry out two-sided boron phosphorus and expand altogether, form front-surface field and the back of the body surface field of back of the body knot back of the body contact, what phosphorus source adopted is that POCl3 temperature is 840 ℃, and sheet resistance requires as 60ohm/sq;
Adopt hydrofluoric acid solution to remove diffusingsurface silicon nitride film and phosphorosilicate glass, the concentration of hydrofluoric acid is 10%, and the removal time is 25min, carries out chemical cleaning after removal;
Adopt the method for PCVD to prepare overleaf the silicon oxynitride film that 80nm is thick, the thick silicon nitride film of positive preparation 75nm,
Preparation electrode district:
Fluting: adopt Merck grooving method to slot to diffusingsurface, remove silicon oxynitride layer, groove width is 200 μ m, carries out chemical cleaning and dries after completing;
The method of employing silk screen printing is aimed at and printed silver is starched thin grid, and what silver slurry adopted is 17F slurry;
Adopt the method for silk screen printing aim at and print the thin grid of aluminium paste, what aluminium paste adopted is Du Pont's aluminium paste;
Adopt the method for silk screen printing to print main grid, what main grid adopted is PVD2A slurry;
Sintering.
Example two:
Select N type silicon substrate, and the resistivity of N type silicon substrate is at 3-5ohm*cm, minority carrier life time is greater than 300us;
Adopt sodium hydroxide solution to carry out polished backside to N type monocrystalline substrate, the mixed solution with hydrochloric acid and hydrofluoric acid after polishing completes carries out chemical cleaning; The concentration range 10% of sodium hydroxide solution; In hydrochloric acid and hydrofluoric acid mixed solution, hydrochloric acid: hydrofluoric acid proportioning is 1:2.5; The concentration of hydrochloric acid and hydrofluoric acid mixed solution is 1.1%;
Use BBr3 to carry out back side High temperature diffusion as boron source, temperature is 940 ℃, time 110min, and sheet resistance requires as 160ohm/sq;
Adopt the method for PCVD to prepare overleaf the silicon nitride film that 130nm is thick; Adopt the method for laser beam drilling to realize back side patterning in coated surface perforate, form P type and the N-type region of back of the body knot back of the body contact battery, aperture widths is 200 μ m, and carries out chemical cleaning;
Use diffusion furnace tube to carry out two-sided boron phosphorus and expand altogether, form front-surface field and the back of the body surface field of back of the body knot back of the body contact, what phosphorus source adopted is that POCl3 temperature is 840 ℃, and sheet resistance requires as 60ohm/sq;
Adopt hydrofluoric acid solution to remove diffusingsurface silicon nitride film and phosphorosilicate glass, the concentration of hydrofluoric acid is 10%, and the removal time is 25min, carries out chemical cleaning after removal;
Adopt the method for PCVD to prepare overleaf the silicon oxynitride film that 80nm is thick, the thick silicon nitride film of positive preparation 75nm;
Preparation electrode district:
Fluting: adopt laser means to slot to diffusingsurface, remove silicon oxynitride layer, groove width is 200 μ m, carries out chemical cleaning and dries after completing;
Adopt the method for silk screen printing aim at and starch thin grid in the region of not perforate printed silver, what silver slurry adopted is 17F slurry;
Adopt the method for silk screen printing aim at and burn the thin grid of type aluminium paste in the printing of the region of the 5th step perforate, what aluminium paste adopted is the emerging type aluminium paste that burns of scholar;
Adopt the method for silk screen printing to print main grid, what main grid adopted is PVD2A slurry;
Sintering.
Claims (8)
1. a back of the body knot back of the body contact crystalline silicon solar cell manufacture method, is characterized in that, comprises step:
(a) prepare: silicon substrate (1) material that selection needs;
(b) one texture-etching side, single-sided polishing: the front surface of silicon substrate (1) is done to making herbs into wool and process, polishing is carried out in its back of the body surface;
(c) back of the body surface boron diffusion;
(d) back side diffusion mask deposition: adopt printing or PECVD mode at silicon substrate (1) backside deposition deielectric-coating (2);
(e) back panel region pattern: adopt laser or printing corrosivity slurry boring method to silicon substrate (1) back side perforate P type and N-type region;
(f) two-sided phosphorus diffusion: silicon substrate (1) is carried out to phosphorus diffusion, make it form front-surface field and the back of the body surface field of the contact of the back of the body knot back of the body;
(g) remove deielectric-coating (2) and phosphorosilicate glass;
(h) front surface and back of the body surface dielectric film (2) deposition;
(i) carry on the back contact area deielectric-coating (2) perforate: the mode of employing laser or printing corrosivity slurry realizes the perforate of back side contact area deielectric-coating (2);
(j) printing, sintering.
2. a kind of back of the body knot back of the body contact crystalline silicon solar cell manufacture method according to claim 1, is characterized in that: the diffusion of boron described in step (c), its diffused sheet resistance is 70-200 Ω/sq.
3. a kind of back of the body knot back of the body contact crystalline silicon solar cell manufacture method according to claim 1, is characterized in that: deielectric-coating (2) described in step (d), its thickness is 100-150nm.
4. a kind of back of the body knot back of the body contact crystalline silicon solar cell manufacture method according to claim 1, is characterized in that: the described perforate of step (e), its width is 100-500um.
5. a kind of back of the body knot back of the body contact crystalline silicon solar cell manufacture method according to claim 1, is characterized in that: the diffusion of phosphorus described in step (f), its diffused sheet resistance is 50-100 Ω/sq.
6. a kind of back of the body knot according to claim 1 is carried on the back contact crystalline silicon solar cell manufacture method, it is characterized in that: step (h) front surface and back of the body surface dielectric film (2) deposition, adopt PECVD mode to deposit, described back of the body surface dielectric film (2) deposit thickness is 60-100nm, and front surface deielectric-coating (2) deposit thickness is 60-100nm.
7. a kind of back of the body knot back of the body contact crystalline silicon solar cell manufacture method according to claim 1, is characterized in that: the perforate of step described in (i), can adopt Merck boring method or employing to burn the perforate of type Metal slurry specific surface.
8. a kind of back of the body knot back of the body contact crystalline silicon solar cell manufacture method according to claim 1, is characterized in that: described deielectric-coating (2) is SiO
2, one or more in SiNx or SiC are laminated.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105609571A (en) * | 2016-02-25 | 2016-05-25 | 上海大族新能源科技有限公司 | IBC solar cell and manufacturing method thereof |
| CN106549066A (en) * | 2015-09-18 | 2017-03-29 | 上海神舟新能源发展有限公司 | A kind of efficient crystal silicon battery metal patternization preparation method of full back contacts |
| CN108615792A (en) * | 2018-04-26 | 2018-10-02 | 徐州日托光伏科技有限公司 | A kind of production method of back contact solar cell group |
| CN110299417A (en) * | 2019-06-05 | 2019-10-01 | 国家电投集团西安太阳能电力有限公司 | A kind of two-sided IBC battery structure and preparation method thereof |
| CN112133793A (en) * | 2020-10-12 | 2020-12-25 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Back-junction back-contact solar cell and manufacturing method thereof |
| CN112133774A (en) * | 2020-10-12 | 2020-12-25 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Back-junction back-contact solar cell and manufacturing method thereof |
Citations (3)
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| CN106549066A (en) * | 2015-09-18 | 2017-03-29 | 上海神舟新能源发展有限公司 | A kind of efficient crystal silicon battery metal patternization preparation method of full back contacts |
| CN105609571A (en) * | 2016-02-25 | 2016-05-25 | 上海大族新能源科技有限公司 | IBC solar cell and manufacturing method thereof |
| CN108615792A (en) * | 2018-04-26 | 2018-10-02 | 徐州日托光伏科技有限公司 | A kind of production method of back contact solar cell group |
| CN110299417A (en) * | 2019-06-05 | 2019-10-01 | 国家电投集团西安太阳能电力有限公司 | A kind of two-sided IBC battery structure and preparation method thereof |
| CN112133793A (en) * | 2020-10-12 | 2020-12-25 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Back-junction back-contact solar cell and manufacturing method thereof |
| CN112133774A (en) * | 2020-10-12 | 2020-12-25 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Back-junction back-contact solar cell and manufacturing method thereof |
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