CN108615792A - A kind of production method of back contact solar cell group - Google Patents
A kind of production method of back contact solar cell group Download PDFInfo
- Publication number
- CN108615792A CN108615792A CN201810387184.XA CN201810387184A CN108615792A CN 108615792 A CN108615792 A CN 108615792A CN 201810387184 A CN201810387184 A CN 201810387184A CN 108615792 A CN108615792 A CN 108615792A
- Authority
- CN
- China
- Prior art keywords
- crystalline silicon
- circuit board
- solar cell
- production method
- cell group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 39
- 238000009792 diffusion process Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000004080 punching Methods 0.000 claims abstract description 11
- 239000005341 toughened glass Substances 0.000 claims abstract description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052796 boron Inorganic materials 0.000 claims abstract description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 4
- 230000008595 infiltration Effects 0.000 claims abstract description 4
- 238000001764 infiltration Methods 0.000 claims abstract description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 4
- 125000004437 phosphorous atom Chemical group 0.000 claims abstract description 4
- 238000007789 sealing Methods 0.000 claims abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 10
- 230000000694 effects Effects 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005496 tempering Methods 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910003910 SiCl4 Inorganic materials 0.000 claims description 3
- 229910003818 SiH2Cl2 Inorganic materials 0.000 claims description 3
- 229910003822 SiHCl3 Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000006117 anti-reflective coating Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000005266 casting Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- UIPVMGDJUWUZEI-UHFFFAOYSA-N copper;selanylideneindium Chemical compound [Cu].[In]=[Se] UIPVMGDJUWUZEI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 3
- 239000003574 free electron Substances 0.000 claims description 3
- 230000008676 import Effects 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 229910000069 nitrogen hydride Inorganic materials 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000005457 optimization Methods 0.000 description 5
- 230000007812 deficiency Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910000464 lead oxide Inorganic materials 0.000 description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000034303 cell budding Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000000749 insecticidal effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of production method of back contact solar cell group, manufacturing process steps are as follows：S1 is respectively formed positive charge film layer and negative electrical charge film layer in the front and back of crystalline silicon and crystalline silicon circuit board is made；S2 carries out boron diffusion technique to the shady face of crystalline silicon circuit board, forms p type diffusion region domain；Phosphorus atoms are fully goed deep into crystalline silicon circuit board by the way of magnetron sputtering, infiltration part are made to form N-type diffusion zone by S3；S4, using chemical vapour deposition technique；The tempered glass of the crystalline silicon circuit board correspondingly-sized processed is bonded by S5；Crystalline silicon circuit board in step S5 is sealed punching press by S6；S7 after sealing punching press 24 hours, forms solar battery group；S8, start battery charging.The charging of solar battery group that the present invention makes faster, lasts a long time, and charging temperature range is wider, while processing that consumables cost is relatively low, and product yield is largely increased, and achieves good economic benefit.
Description
Technical field
The present invention relates to battery processing technique field, especially a kind of production method of back contact solar cell group.
Background technology
Solar cell is also known as " solar chip " or " photocell ", is a kind of photoelectricity using the sunlight direct generation of electricity
Wafer.As long as the illumination that it is satisfied certain illumination conditions is arrived, moment output voltage and can have the case where circuit
Lower generation electric current.Physically it is being known as photovoltaic (Photovoltaic is abbreviated as PV), abbreviation photovoltaic.Solar-electricity
Pond is the device for directly luminous energy being converted to by photoelectric effect or photochemical effect electric energy.The crystal silicon to be worked with photoelectric effect
Solar cell is mainstream, and implements solar cell then also in the budding stage with the hull cell of photochemical effect work.
The application of solar cell at present enters industry, business, agricultural, communication, household from military field, space industry
The departments such as electric appliance and public utility, it is particularly possible to dispersedly be used in outlying district, high mountain, desert, island and rural area, with section
Save the expensive transmission line of electricity of cost.But at this stage, its cost is very high, and service life is shorter, for these problems,
Here it is proposed that a kind of production method of back contact solar cell group.
Invention content
The present invention provides a kind of back contact solar cell group for technical deficiencies such as existing insecticidal formulations
Production method.
The present invention is to solve above-mentioned technical deficiency, using modified technical solution, a kind of back contact solar cell group
Production method, manufacturing process steps are as follows：
S1 is respectively formed positive charge film layer and negative electrical charge film layer in the front and back of crystalline silicon and crystalline silicon is made and integrates
Plate, the positive charge film layer are formed by plasma lead plating membrane process, and the negative electrical charge film layer by carrying out plasma successively
Lead oxide-coated antireflective coating, printing silver paste grid, sintering and import negative electrical charge and formed；
S2 carries out boron diffusion technique to the shady face of crystalline silicon circuit board, forms boron doped region, damaging layer can stop
The diffusion of boron atom, to form multiple holes in wafer, the hole does not have electronics to become unstable, is easy to absorb
Electronics and neutralize, formed p type diffusion region domain；
Phosphorus atoms are fully goed deep into crystalline silicon circuit board by the way of magnetron sputtering, infiltration part are made to be formed by S3
N-type diffusion zone；
S4 will be on the crystalline silicon circuit board that complete p type diffusion region domain and N-type diffusion zone using chemical vapour deposition technique
Uniform coating silicon nitride film, the thickness control of the silicon nitride film is at 20-50 μm；
S5, the crystalline silicon circuit board external application ethylene-vinyl acetate copolymer that will be processed, and by correspondingly-sized
Tempered glass is bonded；
Crystalline silicon circuit board in step S5 is put into the mold of the hydraulic press equipped with buffer unit by S6, carries out punching press,
The operating pressure of hydraulic press is 6-12T, and the cushion effect of buffer unit is 0.8-3.2T, and the punch downstream rate of hydraulic press is 30-
50mm/s is sealed punching press；
S7 after sealing punching press 2-4 hours, connects circuit-line, connects anode and cathode, while can be gone here and there multiple
Connection is in parallel, forms solar battery group；
S8, start battery charging check electric current and temperature after charging, ensure that free electron moves to cathode from anode,
Complete battery production.
As present invention further optimization mode, in step S1, the crystalline silicon can also be substituted for non-crystalline silicon, arsenic
Gallium or selenium indium copper.
As present invention further optimization mode, in step S1, the crystalline silicon is the height in 350~450 μm of thickness
Made of on quality silicon chip, the silicon chip is formed from sawing on the silicon ingot for lifting or casting.
As present invention further optimization mode, in step S5, the light transmittance of the tempered glass is more than 91%, described
Tempered glass is set as handling by ultrawhite tempering.
As present invention further optimization mode, in step S1, the making of the crystalline silicon is selected with SiH2Cl2、
SiHCl3、SiCl4Or SiH4, it is reaction gas, the lining for generating silicon atom and being deposited on heating is reacted under the protective atmosphere of argon gas
On bottom, the substrate material selects Si, SiO2Or Si3N4。
As present invention further optimization mode, in step S5, the silicon nitride film process condition is：Control ammonia
Gas NH3With silane gas SiH4Flow-rate ratio be 1:0.5, then 250-450 DEG C of depositing temperature, time 10-15min is carried out quiet
1-2h is set, carrying out wiping with 95% ethanol liquid cleans, and completes processing.
The solar battery group charging that the present invention makes faster, lasts a long time, and charging temperature range is wider, reduces the sun
Energy battery level, safety and environmental protection, and silicon nitride film and tempered glass have been added in outside, convenient for being sealed guarantor to element
Shield, extends the service life of equipment, while processing that consumables cost is relatively low, and product yield is largely increased, and achieves very
Good economic benefit.
Specific implementation mode
Below in conjunction in the embodiment of the present invention, technical solution in the embodiment of the present invention is clearly and completely retouched
It states, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on the present invention
In embodiment, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.
The present invention provides a kind of technical solution：A kind of production method of back contact solar cell group, manufacturing process steps
It is as follows：
S1 is respectively formed positive charge film layer and negative electrical charge film layer in the front and back of crystalline silicon and crystalline silicon is made and integrates
Plate, the positive charge film layer are formed by plasma lead plating membrane process, and the negative electrical charge film layer by carrying out plasma successively
Lead oxide-coated antireflective coating, printing silver paste grid, sintering and import negative electrical charge and formed；
S2 carries out boron diffusion technique to the shady face of crystalline silicon circuit board, forms boron doped region, damaging layer can stop
The diffusion of boron atom, to form multiple holes in wafer, the hole does not have electronics to become unstable, is easy to absorb
Electronics and neutralize, formed p type diffusion region domain；
Phosphorus atoms are fully goed deep into crystalline silicon circuit board by the way of magnetron sputtering, infiltration part are made to be formed by S3
N-type diffusion zone；
S4 will be on the crystalline silicon circuit board that complete p type diffusion region domain and N-type diffusion zone using chemical vapour deposition technique
Uniform coating silicon nitride film, the thickness control of the silicon nitride film is at 20-50 μm；
S5, the crystalline silicon circuit board external application ethylene-vinyl acetate copolymer that will be processed, and by correspondingly-sized
Tempered glass is bonded；
Crystalline silicon circuit board in step S5 is put into the mold of the hydraulic press equipped with buffer unit by S6, carries out punching press,
The operating pressure of hydraulic press is 6-12T, and the cushion effect of buffer unit is 0.8-3.2T, and the punch downstream rate of hydraulic press is 30-
50mm/s is sealed punching press；
S7 after sealing punching press 2-4 hours, connects circuit-line, connects anode and cathode, while can be gone here and there multiple
Connection is in parallel, forms solar battery group；
S8, start battery charging check electric current and temperature after charging, ensure that free electron moves to cathode from anode,
Complete battery production.
In step S1, the crystalline silicon can also be substituted for non-crystalline silicon, GaAs or selenium indium copper.
In step S1, the crystalline silicon be made of the high quality silicon on piece of 350~450 μm of thickness, the silicon chip from
Sawing forms on the silicon ingot of lifting or casting.
In step S5, the light transmittance of the tempered glass is more than 91%, and the tempered glass is set as by ultrawhite tempering
Reason.
In step S1, the making of the crystalline silicon is selected with SiH2Cl2、SiHCl3、SiCl4Or SiH4, it is reaction gas,
Reaction generates silicon atom and deposits on the heated substrate under the protective atmosphere of argon gas, and the substrate material selects Si, SiO2
Or Si3N4。
In step S5, the silicon nitride film process condition is：Control ammonia NH3With silane gas SiH4Flow-rate ratio
It is 1:0.5, then 250-450 DEG C of depositing temperature, time 10-15min carries out standing 1-2h, with 95% ethanol liquid into
Row wiping cleaning, completes processing.
To sum up, the solar battery group charging that the present invention makes faster, lasts a long time, charging temperature range is wider, subtracts
Few solar cell dosage, safety and environmental protection, and silicon nitride film and tempered glass have been added in outside, it is close convenient for being carried out to element
Envelope protection, extends the service life of equipment, while processing that consumables cost is relatively low, and product yield is largely increased, and obtains
Good economic benefit.
The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention, for this field skill
For art personnel, it is clear that invention is not limited to the details of the above exemplary embodiments, and without departing substantially from the present invention spirit or
In the case of essential characteristic, the present invention can be realized in other specific forms.Therefore, in all respects, should all incite somebody to action
Embodiment regards exemplary as, and is non-limiting, the scope of the present invention by appended claims rather than on state
Bright restriction, it is intended that including all changes that come within the meaning and range of equivalency of the claims in the present invention
It is interior.Any reference signs in the claims should not be construed as limiting the involved claims.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiment being appreciated that.
Claims (6)
1. a kind of production method of back contact solar cell group, which is characterized in that manufacturing process steps are as follows：
S1 is respectively formed positive charge film layer and negative electrical charge film layer in the front and back of crystalline silicon and crystalline silicon circuit board is made,
The positive charge film layer is formed by plasma lead plating membrane process, and the negative electrical charge film layer plates oxygen by carrying out plasma successively
Change lead antireflective coating, printing silver paste grid, sintering and imports negative electrical charge and formed；
S2 carries out boron diffusion technique to the shady face of crystalline silicon circuit board, forms boron doped region, and damaging layer can stop boron original
The diffusion of son, to form multiple holes in wafer, the hole does not have electronics to become unstable, is easy to absorb electronics
And neutralize, form p type diffusion region domain；
Phosphorus atoms are fully goed deep into crystalline silicon circuit board by the way of magnetron sputtering, infiltration part are made to form N-type by S3
Diffusion zone；
S4 will be uniform on the crystalline silicon circuit board for completing p type diffusion region domain and N-type diffusion zone using chemical vapour deposition technique
Coating silicon nitride film, the thickness control of the silicon nitride film is at 20-50 μm；
S5, the crystalline silicon circuit board external application ethylene-vinyl acetate copolymer that will be processed, and by the tempering of correspondingly-sized
Glass is bonded；
Crystalline silicon circuit board in step S5 is put into the mold of the hydraulic press equipped with buffer unit by S6, carries out punching press, hydraulic pressure
The operating pressure of machine is 6-12T, and the cushion effect of buffer unit is 0.8-3.2T, and the punch downstream rate of hydraulic press is 30-50mm/
S is sealed punching press；
S7 connects circuit-line after sealing punching press 2-4 hour, connects anode and cathode, at the same by multiple can connect or
Parallel connection forms solar battery group；
S8, start battery charging check electric current and temperature after charging, ensure that free electron moves to cathode from anode, complete
Battery production.
2. a kind of production method of back contact solar cell group according to claim 1, which is characterized in that step S1
In, the crystalline silicon can also be substituted for non-crystalline silicon, GaAs or selenium indium copper.
3. a kind of production method of back contact solar cell group according to claim 1, which is characterized in that step S1
In, the crystalline silicon is silicon of the silicon chip from lifting or casting made of the high quality silicon on piece of 350~450 μm of thickness
Sawing forms on ingot.
4. a kind of production method of back contact solar cell group according to claim 1, which is characterized in that step S5
In, the light transmittance of the tempered glass is more than 91%, and the tempered glass is set as handling by ultrawhite tempering.
5. a kind of production method of back contact solar cell group according to claim 1, which is characterized in that step S1
In, the making of the crystalline silicon is selected with SiH2Cl2、SiHCl3、SiCl4Or SiH4, it is reaction gas, in the protection gas of argon gas
Reaction generates silicon atom and deposits on the heated substrate under atmosphere, and the substrate material selects Si, SiO2Or Si3N4。
6. a kind of production method of back contact solar cell group according to claim 1, which is characterized in that step S5
In, the silicon nitride film process condition is：Control ammonia NH3With silane gas SiH4Flow-rate ratio be 1:0.5, deposition temperature
250-450 DEG C of degree, then time 10-15min carries out standing 1-2h, carrying out wiping with 95% ethanol liquid cleans, and completes
Processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810387184.XA CN108615792A (en) | 2018-04-26 | 2018-04-26 | A kind of production method of back contact solar cell group |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810387184.XA CN108615792A (en) | 2018-04-26 | 2018-04-26 | A kind of production method of back contact solar cell group |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108615792A true CN108615792A (en) | 2018-10-02 |
Family
ID=63660978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810387184.XA Pending CN108615792A (en) | 2018-04-26 | 2018-04-26 | A kind of production method of back contact solar cell group |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108615792A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112909128A (en) * | 2021-02-07 | 2021-06-04 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Manufacturing method of heterojunction solar cell and heterojunction solar cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148291A (en) * | 2011-03-18 | 2011-08-10 | 天威新能源（扬州）有限公司 | Manufacturing method of back contact battery in low ohmic contact |
| CN103681963A (en) * | 2013-11-29 | 2014-03-26 | 奥特斯维能源（太仓）有限公司 | Back-junction back-contact crystalline silicon solar cell manufacturing method |
| CN104576798A (en) * | 2013-10-29 | 2015-04-29 | Lg电子株式会社 | Solar cell module and method for manufacturing same |
| CN107342340A (en) * | 2017-06-29 | 2017-11-10 | 南京日托光伏科技股份有限公司 | Double glass assemblies of back contact solar cell and preparation method thereof |
-
2018
- 2018-04-26 CN CN201810387184.XA patent/CN108615792A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148291A (en) * | 2011-03-18 | 2011-08-10 | 天威新能源（扬州）有限公司 | Manufacturing method of back contact battery in low ohmic contact |
| CN104576798A (en) * | 2013-10-29 | 2015-04-29 | Lg电子株式会社 | Solar cell module and method for manufacturing same |
| CN103681963A (en) * | 2013-11-29 | 2014-03-26 | 奥特斯维能源（太仓）有限公司 | Back-junction back-contact crystalline silicon solar cell manufacturing method |
| CN107342340A (en) * | 2017-06-29 | 2017-11-10 | 南京日托光伏科技股份有限公司 | Double glass assemblies of back contact solar cell and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112909128A (en) * | 2021-02-07 | 2021-06-04 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Manufacturing method of heterojunction solar cell and heterojunction solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8093096B2 (en) | Method of successive high-resistance buffer layer/window layer (transparent conductive film) formation for CIS based thin-film solar cell and apparatus for successive film formation for practicing the method of successive film formation | |
| US20070023081A1 (en) | Compositionally-graded photovoltaic device and fabrication method, and related articles | |
| CN101097969A (en) | Photovoltaic device which includes all-back-contact configuration, and related fabrication processes | |
| JP2717583B2 (en) | Stacked photovoltaic element | |
| US9153730B2 (en) | Solar cell front contact doping | |
| WO2018157492A1 (en) | Preparation method for p-type perc solar cell, p-type perc solar cell, cell assembly, and cell system | |
| CN102017188A (en) | Solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation | |
| CN101233620A (en) | Compositionally-graded photovoltaic device and fabrication method, and related articles | |
| CN101652895A (en) | Methods for forming a photovoltaic device with low contact resistance | |
| Kunz et al. | 5% efficient evaporated solid‐phase crystallised polycrystalline silicon thin‐film solar cells | |
| JP2016072523A (en) | Crystal silicon solar cell, method of manufacturing the same, and solar cell module | |
| CN108615792A (en) | A kind of production method of back contact solar cell group | |
| US7851249B2 (en) | Tandem solar cell including an amorphous silicon carbide layer and a multi-crystalline silicon layer | |
| US8652871B2 (en) | Method for depositing an amorphous silicon film for photovoltaic devices with reduced light-induced degradation for improved stabilized performance | |
| JP2004265889A (en) | Photoelectric conversion element, photoelectric conversion device, and iron silicide film | |
| CN104600136A (en) | Manufacturing method of hetero-junction solar cell and hetero-junction solar cell | |
| CN106887483A (en) | Silicon substrate heterojunction solar cell and preparation method thereof | |
| CN102881776B (en) | A kind of preparation method and solar cell carrying on the back passivation crystal silicon solar energy battery | |
| KR101504343B1 (en) | Manufacturing method of compound semiconductor solar cell | |
| US7863080B1 (en) | Process for making multi-crystalline silicon thin-film solar cells | |
| CN103346203A (en) | Up-conversion solar cell and preparation method thereof | |
| KR20110077923A (en) | Front electrode for a thin film silicone solar cell and a thin film silicone solar cell comprising the same | |
| JP2022501825A (en) | How to post-treat the absorbent layer | |
| CN208256704U (en) | A kind of solar battery | |
| CN205428969U (en) | A silica -based heterogeneous solar cell that connects |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181002 |
|
| RJ01 | Rejection of invention patent application after publication |