CN103594534B - Aluminum emitter stage back junction back contact crystalline silicon solar cell and manufacture method thereof - Google Patents
Aluminum emitter stage back junction back contact crystalline silicon solar cell and manufacture method thereof Download PDFInfo
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- CN103594534B CN103594534B CN201310610369.XA CN201310610369A CN103594534B CN 103594534 B CN103594534 B CN 103594534B CN 201310610369 A CN201310610369 A CN 201310610369A CN 103594534 B CN103594534 B CN 103594534B
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000002161 passivation Methods 0.000 claims abstract description 13
- 238000005245 sintering Methods 0.000 claims abstract description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 22
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 239000002253 acid Substances 0.000 claims description 13
- 238000007639 printing Methods 0.000 claims description 12
- 238000007650 screen-printing Methods 0.000 claims description 11
- 239000000243 solution Substances 0.000 claims description 9
- 239000011259 mixed solution Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 7
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 6
- 229910019213 POCl3 Inorganic materials 0.000 claims description 4
- 229910004205 SiNX Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000009955 starching Methods 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910004012 SiCx Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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Abstract
The invention discloses a kind of aluminum emitter stage back junction back contact crystalline silicon solar cell and manufacture method thereof, this battery includes that front surface and back surface are all covered with the N-type silicon substrate of the tabular of n-type doping layer, it is coated with passivation layer outside n-type doping layer, in the N-type silicon substrate of back surface, compartment of terrain is embedded with p-type doped layer, p-type doped layer is connected above anode, is also embedded with battery cathode in back surface n-type doping layer.Its manufacture method include texturing process, doped layer making, perforate, etch, clean, deposit, the step such as sintering.The present invention has low cost and can the advantage of volume production.
Description
Technical field
The present invention relates to structure and the manufacture method of a kind of solaode, be specifically related to a kind of aluminum emitter stage back of the body knot back of the body and connect
Touch crystal-silicon solar cell and manufacture method thereof.
Background technology
Solar energy can be directly translated into electric energy by solaode, is the effective means utilizing solar energy resources, due to
Any harmful substance will not be produced, so solaode is solving in terms of energy and environment problem extremely in recent years in using
Favor, has fabulous market prospect.Solar energy is also described as being the optimal energy, be solve human society depend on for existence and
The valuable source of development.
The solar cell material of main flow is by P-type silicon substrate at present, is spread by high temperature phosphorous and forms pn knot.But P
Type crystal silicon battery by internal boron oxygen on being affected the phenomenon that there is photo attenuation, and N-type silicon materials relative to P-type silicon material come
Say, due to its defect nonmetal to metal impurities and many most internal insensitive less boron oxygen pair, so the stablizing of performance
Property is higher than P type crystal silicon battery；Simultaneously because the minority carrier life time of N type battery is higher, this is to prepare more efficient solar cell
Lay a good foundation.
Back junction back contact solar cell initially entered the sight line of people as far back as 1977, remained sun electricity up to now
The focus of pond industry research.Relative to conventional silion cell, the advantage of back junction back contact solar cell is it is obvious that mainly can be with table
The following aspects now: (1) back junction back contact solar cell is using N-type crystalline silicon as substrate, and minority carrier life time is high, it is adaptable to system
Standby high-efficiency battery, is particularly well-suited to tie the battery structure at back surface in this pn of back junction back contact solar cell, because producing
Photo-generated carrier in front surface have to move to the pn knot of battery back surface and just can be utilized, and higher minority carrier life time is
Reduce photo-generated carrier in solar battery surface and internal compound guarantee；(2) Boron contents of N-type matrix is extremely low, therefore by boron
The photo attenuation caused is not had p-type matrix material obvious by oxygen, becomes apparent from the improved efficiency of assembly after encapsulation；(3) back of the body knot
The front of back contacts solar cell does not has electrode, decreases shading-area, adds photogenerated current, the positive and negative electrode submission of battery
The back side being distributed in battery of finger-like；(4) back junction back contact solar cell is prone to encapsulation, compares with conventional batteries, it is not necessary to front
A piece of negative pole intersects receives rear a piece of positive pole, it is easy to operation.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the present invention provides a kind of aluminum emitter stage back of the body knot back of the body to connect
Touching crystal-silicon solar cell and manufacture method thereof, the solar cell production line that the method is safe and reliable Yu traditional is compatible, is suitable for
The product line upgrading of solar cell at present.
Technical scheme: for solving above-mentioned technical problem, the aluminum emitter stage back junction back contact crystalline silicon sun that the present invention provides
Battery, including the N-type silicon substrate of tabular, front surface and back surface in described N-type silicon substrate are coated with n-type doping layer, described N
Being coated with passivation layer outside type doped layer, in the N-type silicon substrate of described back surface, compartment of terrain is embedded with p-type doped layer, and described p-type is mixed
Diamicton is connected above anode, is embedded with battery cathode in described back surface n-type doping layer.
Preferably, the sheet resistance value of described n-type doping layer is 30-120ohm/sq.
Preferably, the passivation layer of described N-type silicon substrate front surface is SiNx passivation layer, and the passivation layer of back surface is SiO2、
SiOx/SiNx、Al2O3/ SiNx or SiCx passivation layer.
The present invention proposes the method processed of above-mentioned aluminum emitter stage back junction back contact crystalline silicon solar cell simultaneously, including following step
Rapid:
(1) with alkaline solution, N-type silicon chip is carried out double-sided texture process；
(2) N-type silicon chip two-sided making N-shaped doped layer, the sheet resistance of doped layer is at 30-120ohm/sq；
(3) to N-type silicon chip back side p+Pattered region carries out partially perforation, removes the PSG in this region；
(4) p to N-type silicon chip patterning+Region is polished etching, removes p+N-shaped doped layer in pattered region；
(5) remove the PSG in other region, and carry out wet-cleaning；
(6) in silicon chip front surface and back surface deposit passivation layer；
(7) back side p+ pattered region deielectric-coating perforate；
(8) silk screen printing backplate, sintering.
Preferably, described step 2) in doped layer can be spread by POCl3, ion implanting or the method for solid-state source diffusion
Make.
Preferably, the boring method in described step 3) is corrosivity slurry perforate or laser beam drilling.
Preferably, patterning the method for P+ region polishing in described step 4) is to use to have selectivity to silicon and PSG and carve
The alkaline solution of erosion.
Preferably, in described step 7), the mode of back side deielectric-coating perforate for printing corrosivity slurry or uses laser to open
Film；If using the aluminium paste that can burn deielectric-coating, then skip this step.
Beneficial effect: invention uses matrix material to be N-type crystalline silicon sheet, and its minority carrier life time is high and photo attenuation is little, right
Prepare battery and package assembling all has superiority；Before and after using passivating film passivation cell, surface can effectively reduce surface minority load
The recombination rate of stream, improves surface minority carrier life time, and the purpose preparing antireflective coating at tow sides is then to reduce light
The reflection of son, increases the absorption to photon, increases photogenerated current and then increases the conversion efficiency that battery is final.Battery positive and negative
The back side that electrode is all made in, decreases shading-area, adds photogenerated current, can preferably collect the electric current that silicon chip produces,
Between metal and silicon chip, form good Ohmic contact simultaneously；The method using silk screen printing Al slurry or sputtered aluminum is formed
The emitter stage at the back side can simplify processing step, reduces cost and time；All of processing step is all in existing process conditions
Under complete, it is not necessary to increase any equipment and just can produce efficient back junction back contact solar cell.
Accompanying drawing explanation
The structural representation of Fig. 1 embodiments of the invention one；
Fig. 2 is the process chart of embodiments of the invention one；
Each label in figure: N type silicon substrate 1, silicon nitride film 2, n-type doping layer 3, P type doped layer 4, anode 5,
Battery cathode 6.
Detailed description of the invention
Embodiment one
The structure of the aluminum emitter stage back junction back contact crystalline silicon solar cell of the present embodiment is as it is shown in figure 1, include N type silicon
Substrate 1, silicon nitride film 2, n-type doping layer 3, P type doped layer 4, the positive pole 5 of battery, the negative pole 6 of battery.Wherein N-type silicon lining
The end 1 is tabular, and front surface and back surface in N-type silicon substrate 1 are coated with n-type doping layer 3, are coated with passivation outside n-type doping layer
Layer, this passivation layer is silicon nitride film 2, and in the N-type silicon substrate 1 of back surface, compartment of terrain is embedded with p-type doped layer 4, p-type doped layer
It is connected above anode 5, described back surface n-type doping layer 3 is embedded with battery cathode 6.
The operation of the preparation method of above-mentioned Novel back knot back contact structure N-type silicon solar cell is as follows:
(1) select N type silicon substrate, and the resistivity of N-type silicon substrate is more than 300us at 3-5ohm.cm, minority carrier life time；
(2) use sodium hydroxide solution that the surface of n type single crystal silicon substrate is prepared the light trapping structure of Pyramid, after
Chemical cleaning is carried out with the mixed solution of hydrochloric acid and Fluohydric acid.；The concentration range 0.5% of sodium hydroxide solution；Hydrochloric acid and Fluohydric acid.
In mixed solution, hydrochloric acid: Fluohydric acid. proportioning is 1:2.5；The concentration of hydrochloric acid and Fluohydric acid. mixed solution is 1.1%；
(3) using diffusion furnace tube to carry out two-sided phosphorus diffusion, phosphorus source uses POCl3, temperature is 840 DEG C, sheet resistance requirement
For 70ohm/sq；
(4) method using printing Merck slurry removes back side p+The PSG of pattered region；
(5) use organic alkali solution to p+Pattered region is polished, and removes PSG after polishing；
(6) method using PCVD prepares the thick silicon nitride film of 75nm, back side system at diffusingsurface
Standby silicon oxynitride film thick for 130nm；
(7) electrode district is prepared:
A) fluting: use Merck boring method that emitter region re-starts fluting, removes silicon oxynitride layer, fluting
Width is 200 μm, carries out Chemical cleaning and dry after completing；
B) method of silk screen printing is used to carry out being directed at and starching thin grid at non-opening area printing silver；
C) method of silk screen printing is used to carry out being directed at and printing the thin grid of aluminium paste at opening area；
D) method of silk screen printing is used to carry out printing main grid；
E) sintering.
Battery in the present embodiment presses the various greenware conditions of process sequence arrangement as shown in Figure 2.
Embodiment two
The aluminum emitter stage back junction back contact crystalline silicon solar cell structure of the present embodiment is identical with embodiment one, the system of employing
Make method different:
(1) select N type silicon substrate, and the resistivity of N type silicon substrate is more than 300us at 3-5ohm.cm, minority carrier life time；
(2) use sodium hydroxide solution that the surface of N type monocrystalline substrate is prepared the light trapping structure of Pyramid,
Chemical cleaning is carried out afterwards with the mixed solution of hydrochloric acid and Fluohydric acid.；The concentration range 0.5% of sodium hydroxide solution；Hydrochloric acid and hydrogen fluorine
In acid mixed solution, hydrochloric acid: Fluohydric acid. proportioning is 1:2.5；The concentration of hydrochloric acid and Fluohydric acid. mixed solution is 1.1%；
(3) using diffusion furnace tube to carry out two-sided phosphorus diffusion, phosphorus source uses POCl3Temperature is 840 DEG C, and sheet resistance requirement is
50ohm/sq；
(4) method of adopter's laser removes back side p+The PSG in region；
(5) use chemical method to back side p+Region is polished, and removes PSG after polishing；
(6) method using PCVD prepares the thick silicon nitride film of 80nm, back side system at diffusingsurface
Standby silicon oxynitride film thick for 130nm；
(7) electrode district is prepared:
A) fluting: use laser beam drilling method that emitter region re-starts fluting, removes silicon oxynitride layer, fluting width
Degree is 200 μm, carries out Chemical cleaning and dry after completing；
B) method of silk screen printing is used to carry out being directed at and starching thin grid at non-opening area printing silver；
C) method of silk screen printing is used to carry out being directed at and burning the thin grid of type aluminium paste in opening area printing；
D) method of silk screen printing is used to carry out printing main grid；
E) sintering.
The present invention is that the efficient crystal silicon solar batteries of volume production provides a kind of new production model theory, the suitability and can grasping
The property made is strong, implies huge use value.
With the above-mentioned desirable embodiment according to the present invention for enlightenment, by above-mentioned description, relevant staff is complete
Entirely can carry out various change and amendment in the range of without departing from this invention technological thought.The technology of this invention
The content that property scope is not limited in description, it is necessary to determine its technical scope according to right.
Claims (1)
1. an aluminum emitter stage back junction back contact crystalline silicon solar cell, it is characterised in that: include the N-type silicon substrate of tabular,
The front surface of described N-type silicon substrate and back surface are coated with N-shaped doped layer, are coated with passivation layer outside described N-shaped doped layer, described
In the N-type silicon substrate of back surface, compartment of terrain is embedded with p-type doped layer, and described p-type doped layer is connected above anode, described
Back surface N-shaped doped layer is embedded with battery cathode；The passivation layer of described N-type silicon substrate front surface is SiNx passivation layer, its system
The operation of Preparation Method is as follows:
1) select N-type silicon substrate, and the resistivity of N-type silicon substrate is more than 300 μ s at 3-5 Ω .cm, minority carrier life time；
2) use sodium hydroxide solution that the surface of n type single crystal silicon substrate is prepared the light trapping structure of Pyramid, after use salt
The mixed solution of acid and Fluohydric acid. carries out Chemical cleaning；The concentration range 0.5% of sodium hydroxide solution；Hydrochloric acid and Fluohydric acid. mixing
In solution, hydrochloric acid: Fluohydric acid. proportioning is 1: 2.5；The concentration of hydrochloric acid and Fluohydric acid. mixed solution is 1.1%；
3) using diffusion furnace tube to carry out two-sided phosphorus diffusion, phosphorus source uses POCl3, and temperature is 840 DEG C, and it is 70 that sheet resistance requires
Ω/□；
4) method using printing corrosivity slurry removes back side p+The PSG of pattered region；
5) use organic alkali solution to p+Pattered region is polished, and removes PSG after polishing；
6) method using PCVD prepares the thick silicon nitride film of 75nm at diffusingsurface, prepared by the back side
The silicon oxynitride film that 130nm is thick；
7) electrode district is prepared:
A) fluting: use corrosivity slurry boring method that emitter region re-starts fluting, removes silicon oxynitride layer, fluting
Width is 200 μm, carries out Chemical cleaning and dry after completing；
B) method of silk screen printing is used to carry out being directed at and starching thin grid at non-opening area printing silver；
C) method of silk screen printing is used to carry out being directed at and printing the thin grid of aluminium paste at opening area；
D) method of silk screen printing is used to carry out printing main grid；
E) sintering.
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| CN201310610369.XA CN103594534B (en) | 2013-11-27 | 2013-11-27 | Aluminum emitter stage back junction back contact crystalline silicon solar cell and manufacture method thereof |
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| CN103594534B true CN103594534B (en) | 2016-08-17 |
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| CN103811591B (en) * | 2014-02-27 | 2016-10-05 | 友达光电股份有限公司 | The preparation method of back contact solar battery |
| CN107785456A (en) * | 2017-09-27 | 2018-03-09 | 泰州中来光电科技有限公司 | A kind of preparation method of back contact solar cell |
| CN113363354B (en) * | 2021-06-04 | 2022-07-15 | 浙江爱旭太阳能科技有限公司 | Preparation method of P-type back contact type crystalline silicon solar cell |
| CN113328012B (en) * | 2021-06-24 | 2023-10-03 | 浙江爱旭太阳能科技有限公司 | PERC battery and manufacturing method for reducing composite rate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4234352A (en) * | 1978-07-26 | 1980-11-18 | Electric Power Research Institute, Inc. | Thermophotovoltaic converter and cell for use therein |
| CN103367547A (en) * | 2013-07-16 | 2013-10-23 | 苏州润阳光伏科技有限公司 | Full-back-electrode solar cell and method for manufacturing full-back-electrode solar cell |
| CN203674224U (en) * | 2013-11-27 | 2014-06-25 | 奥特斯维能源（太仓）有限公司 | Aluminium emitting electrode back-junction-back contact crystalline silicon solar cell |
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2013
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4234352A (en) * | 1978-07-26 | 1980-11-18 | Electric Power Research Institute, Inc. | Thermophotovoltaic converter and cell for use therein |
| CN103367547A (en) * | 2013-07-16 | 2013-10-23 | 苏州润阳光伏科技有限公司 | Full-back-electrode solar cell and method for manufacturing full-back-electrode solar cell |
| CN203674224U (en) * | 2013-11-27 | 2014-06-25 | 奥特斯维能源（太仓）有限公司 | Aluminium emitting electrode back-junction-back contact crystalline silicon solar cell |
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