CN203674224U - Aluminium emitting electrode back-junction-back contact crystalline silicon solar cell - Google Patents
Aluminium emitting electrode back-junction-back contact crystalline silicon solar cell Download PDFInfo
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- CN203674224U CN203674224U CN201320758593.9U CN201320758593U CN203674224U CN 203674224 U CN203674224 U CN 203674224U CN 201320758593 U CN201320758593 U CN 201320758593U CN 203674224 U CN203674224 U CN 203674224U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses an aluminium emitting electrode back-junction-back contact crystalline silicon solar cell. The cell comprises a plate-shaped N-type substrate whose front surface and back surface are covered with n-type doped layers. A passivation layer is covered outside the n-type doped layer. The N-type substrate on the back surface is embedded with p-type doped layers at interval. A cell anode is connected on the p-type doped layer. A cell cathode is embedded in the n-type doped layer on the back surface. The solar cell is advantaged by low cost and can be mass-produced.
Description
Technical field
The utility model relates to a kind of structure of solar cell, is specifically related to a kind of aluminium emitter back of the body knot back of the body contact crystalline silicon solar cell.
Background technology
Solar cell can directly change into electric energy by solar energy, it is the effective means of utilizing solar energy resources, owing in use can not producing any harmful substance, so solar cell, gaining great popularity aspect solution energy and environment problem, had fabulous market prospects in recent years.It is the optimal energy that solar energy is also described as, and is to solve the valuable source that human society is depended on for existence and development.
The solar cell material of main flow is with P type silicon substrate at present, spreads to form pn knot by high temperature phosphorous.But in P type crystal silicon battery acceptor boron oxygen on impact there is the phenomenon of photo attenuation, and N-type silicon materials are with respect to P type silicon materials, because it is to less boron oxygen pair in metal impurities and the insensitive while body of many nonmetal defects, so the stability of performance will be higher than P type crystal silicon battery; Because the minority carrier life time of N type battery is higher, this lays a good foundation for preparing more efficient solar cell simultaneously.
Back of the body knot back of the body contact solar cell started to enter people's sight line as far back as 1977, remain up to now the focus of solar cell industry research.With respect to conventional silion cell, the advantage of back of the body knot back of the body contact solar cell clearly, mainly can show the following aspects: (1) back of the body knot back of the body contact solar cell is using N-type crystalline silicon as substrate, minority carrier life time is high, be applicable to prepare high-efficiency battery, be specially adapted in this pn knot of back of the body knot back of the body contact solar cell at the surperficial battery structure of the back of the body, must move to battery and carry on the back surperficial pn knot and just can be utilized because result from the photo-generated carrier of front surface, higher minority carrier life time is to reduce photo-generated carrier compound assurance in solar battery surface and body; (2) the boron content of N-type matrix is extremely low, does not therefore have P mold base material obvious by boron oxygen to the photo attenuation causing, more obvious to encapsulating the improved efficiency of rear assembly; (3) front of back of the body knot back of the body contact solar cell does not have electrode, has reduced shading-area, has increased photogenerated current, the back side that is distributed in battery of the positive and negative electrode submission finger-like of battery; (4) carry on the back knot back of the body contact solar cell and be easy to encapsulation, compare with conventional batteries, without the positive pole of the negative pole of front a slice intersection being received to rear a slice, easy operating.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the utility model provides a kind of aluminium emitter back of the body knot back of the body contact crystalline silicon solar cell, safe and reliable and with traditional solar cell production line compatibility, be suitable for the product line upgrading of current solar cell.
Technical scheme: for solving the problems of the technologies described above, the aluminium emitter back of the body knot back of the body contact crystalline silicon solar cell that the utility model provides, comprise tabular N-type silicon substrate, front surface and back of the body surface coverage at described N-type silicon substrate have N-shaped doped layer, described N-shaped doped layer is coated with passivation layer outward, on the surperficial N-type silicon substrate of the described back of the body, compartment of terrain embeds p-type doped layer, and described p-type doped layer top is connected with anode, in described back of the body surface n type doped layer, embeds and has battery cathode.
Preferably, the sheet resistance value of described N-shaped doped layer is 30-120 Ω/.
Preferably, the passivation layer of described N-type silicon substrate front surface is SiNx passivation layer, and carrying on the back surperficial passivation layer is SiO
2, SiOx/SiNx, Al
2o
3/ SiNx or SiCx passivation layer.
The method processed of above-mentioned aluminium emitter back of the body knot back of the body contact crystalline silicon solar cell comprises the following steps:
(1) with alkaline solution, N-type silicon chip is carried out to double-sided texture processing;
(2) the two-sided making N-shaped of N-type silicon chip doped layer, the sheet resistance of doped layer is at 30-120 Ω/;
(3) to N-type silicon chip back side p
+pattered region is carried out partially perforation, removes the PSG in this region;
(4) p to N-type silicon chip patterning
+polishing etching is carried out in region, removes p
+n-shaped doped layer in pattered region;
(5) remove the PSG in other region, and carry out wet-cleaned;
(6) at silicon chip front surface and back of the body surface deposition passivation layer;
(7) back side p
+the perforate of pattered region deielectric-coating;
(8) silk screen printing backplate, sintering.
Preferably, described step 2) in doped layer can pass through POCl
3the method of diffusion, Implantation or solid-state source diffusion is made.
Preferably, the boring method in described step 3) is the perforate of corrosivity slurry or laser beam drilling.
Preferably, patterning p in described step 4)
+the method of region polishing is employing has selective etch alkaline solution to silicon and PSG.
Preferably, the mode that in described step 7), back side deielectric-coating is opened film is for printing corrosivity slurry or adopting laser open film; If adopt the aluminium paste that can burn deielectric-coating, skip this step.
Beneficial effect: it is N-type crystal silicon chip that utility model adopts basis material, and its minority carrier life time is high and photo attenuation is little, to preparing battery and package assembling all has superiority; Adopt the front and rear surfaces of passivating film passivation cell can effectively reduce the recombination rate of surperficial minority carrier, improve surperficial minority carrier life time, the object of preparing antireflective coating at tow sides is the reflection in order to reduce photon, increase the absorption to photon, increase photogenerated current and then increase the final conversion efficiency of battery.The back side that the positive and negative electrode of battery is all made in, has reduced shading-area, has increased photogenerated current, can better collect the electric current that silicon chip produces, and forms good ohmic contact simultaneously between metal and silicon chip; Adopt the emitter at the method formation back side of silk screen printing Al slurry or sputtered aluminum can simplify processing step, reduce costs and the time; All processing steps all complete under existing process conditions, do not need to increase any equipment and just can produce efficient back of the body knot back of the body contact solar cell.
Accompanying drawing explanation
The structural representation of Fig. 1 embodiment mono-of the present utility model;
Fig. 2 is the state diagram of embodiment mono-of the present utility model intermediate products while manufacturing;
Each label in figure: N type silicon substrate 1, silicon nitride film 2, N-shaped doped layer 3, p type doped layer 4, anode 5, battery cathode 6.
Embodiment
Embodiment mono-
The structure of the aluminium emitter back of the body knot back of the body contact crystalline silicon solar cell of the present embodiment as shown in Figure 1, comprises the positive pole 5 of N type silicon substrate 1, silicon nitride film 2, N-shaped doped layer 3, p type doped layer 4, battery, the negative pole 6 of battery.Wherein N-type silicon substrate 1 is tabular, front surface and back of the body surface coverage at N-type silicon substrate 1 have N-shaped doped layer 3, N-shaped doped layer is coated with passivation layer outward, this passivation layer is silicon nitride film 2, carry on the back compartment of terrain embedding on surperficial N-type silicon substrate 1 and have p-type doped layer 4, p-type doped layer top is connected with anode 5, in described back of the body surface n type doped layer 3, embeds and has battery cathode 6.
The preparation method's of above-mentioned Novel back knot back of the body contact structures N-type silicon solar cell operation is as follows:
(1) selection N type silicon substrate, and the resistivity of N-type silicon substrate is at 3-5 Ω .cm, and minority carrier life time is greater than 300 μ s;
(2) adopt sodium hydroxide solution the surface of n type single crystal silicon substrate to be prepared to the light trapping structure of Pyramid, the rear mixed solution with hydrochloric acid and hydrofluoric acid carries out chemical cleaning; The concentration range 0.5% of sodium hydroxide solution; In hydrochloric acid and hydrofluoric acid mixed solution, hydrochloric acid: hydrofluoric acid proportioning is 1:2.5; The concentration of hydrochloric acid and hydrofluoric acid mixed solution is 1.1%;
(3) use diffusion furnace tube to carry out two-sided phosphorus diffusion, that phosphorus source adopts is POCl
3, temperature is 840 ℃, it is 70 Ω/ that sheet resistance requires;
(4) adopt the method for printing corrosivity slurry to remove back side p
+the PSG of pattered region;
(5) adopt organic base solution to p
+pattered region is carried out polishing, removes PSG after polishing;
(6) adopt the method for PCVD to prepare at diffusingsurface the silicon nitride film that 75nm is thick, the silicon oxynitride film that 130nm is thick is prepared at the back side;
(7) prepare electrode district:
A) fluting: adopt corrosivity slurry boring method to re-start fluting to emitter region, remove silicon oxynitride layer, groove width is 200 μ m, carries out chemical cleaning and dry after completing;
B) adopt the method for silk screen printing to aim at and starch thin grid in opening area printed silver not;
C) adopt the method for silk screen printing aim at and print the thin grid of aluminium paste at opening area;
D) adopt the method for silk screen printing to print main grid;
E) sintering.
Battery in the present embodiment press process sequence arrange various intermediate products state as shown in Figure 2.
Embodiment bis-
The aluminium emitter back of the body knot back of the body contact crystalline silicon solar cell structure of the present embodiment is identical with embodiment mono-, the manufacture method difference of employing:
(1) selection N type silicon substrate, and the resistivity of N type silicon substrate is at 3-5 Ω .cm, and minority carrier life time is greater than 300 μ s;
(2) adopt sodium hydroxide solution the surface of N type monocrystalline substrate to be prepared to the light trapping structure of Pyramid, the rear mixed solution with hydrochloric acid and hydrofluoric acid carries out chemical cleaning; The concentration range 0.5% of sodium hydroxide solution; In hydrochloric acid and hydrofluoric acid mixed solution, hydrochloric acid: hydrofluoric acid proportioning is 1:2.5; The concentration of hydrochloric acid and hydrofluoric acid mixed solution is 1.1%;
(3) use diffusion furnace tube to carry out two-sided phosphorus diffusion, that phosphorus source adopts is POCl
3temperature is 840 ℃, and it is 50 Ω/ that sheet resistance requires;
(4) method of adopter's laser is removed back side p
+the PSG in region;
(5) adopt chemical method to back side p
+polishing is carried out in region, removes PSG after polishing;
(6) adopt the method for PCVD to prepare at diffusingsurface the silicon nitride film that 80nm is thick, the silicon oxynitride film that 130nm is thick is prepared at the back side;
(7) prepare electrode district:
A) fluting: adopt laser beam drilling method to re-start fluting to emitter region, remove silicon oxynitride layer, groove width is 200 μ m, carries out chemical cleaning and dries after completing;
B) adopt the method for silk screen printing to aim at and starch thin grid in opening area printed silver not;
C) adopt the method for silk screen printing aim at and burn the thin grid of type aluminium paste in opening area printing;
D) adopt the method for silk screen printing to print main grid;
E) sintering.
The utility model provides a kind of new production model theory for the efficient crystal silicon solar batteries of volume production, and applicability and workable, is implying huge use value.
Take above-mentioned foundation desirable embodiment of the present utility model as enlightenment, by above-mentioned description, relevant staff can, not departing from the scope of this utility model technological thought, carry out various change and modification completely.The technical scope of this utility model is not limited to the content on specification, must determine its technical scope according to claim scope.
Claims (3)
1. an aluminium emitter back of the body knot back of the body contact crystalline silicon solar cell, it is characterized in that: comprise tabular N-type silicon substrate, front surface and back of the body surface coverage at described N-type silicon substrate have N-shaped doped layer, described N-shaped doped layer is coated with passivation layer outward, on the surperficial N-type silicon substrate of the described back of the body, compartment of terrain embeds p-type doped layer, described p-type doped layer top is connected with anode, in described back of the body surface n type doped layer, embeds and has battery cathode.
2. aluminium emitter back of the body knot back of the body contact crystalline silicon solar cell as claimed in claim 1, is characterized in that: the sheet resistance value of described N-shaped doped layer is 30-120 Ω/.
3. aluminium emitter back of the body knot back of the body contact crystalline silicon solar cell as claimed in claim 1, is characterized in that: the passivation layer of described N-type silicon substrate front surface is SiNx passivation layer, and carrying on the back surperficial passivation layer is SiO
2, SiOx/SiNx, Al
2o
3/ SiNx or SiCx passivation layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320758593.9U CN203674224U (en) | 2013-11-27 | 2013-11-27 | Aluminium emitting electrode back-junction-back contact crystalline silicon solar cell |
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| CN201320758593.9U CN203674224U (en) | 2013-11-27 | 2013-11-27 | Aluminium emitting electrode back-junction-back contact crystalline silicon solar cell |
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|---|---|
| CN203674224U true CN203674224U (en) | 2014-06-25 |
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|---|---|---|---|
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594534A (en) * | 2013-11-27 | 2014-02-19 | 奥特斯维能源（太仓）有限公司 | Aluminum emitting electrode back junction back contact crystalline silicon solar cell and manufacturing method thereof |
| CN107293606A (en) * | 2017-06-19 | 2017-10-24 | 浙江晶科能源有限公司 | P-type IBC battery structures and preparation method thereof |
-
2013
- 2013-11-27 CN CN201320758593.9U patent/CN203674224U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594534A (en) * | 2013-11-27 | 2014-02-19 | 奥特斯维能源（太仓）有限公司 | Aluminum emitting electrode back junction back contact crystalline silicon solar cell and manufacturing method thereof |
| CN103594534B (en) * | 2013-11-27 | 2016-08-17 | 奥特斯维能源（太仓）有限公司 | Aluminum emitter stage back junction back contact crystalline silicon solar cell and manufacture method thereof |
| CN107293606A (en) * | 2017-06-19 | 2017-10-24 | 浙江晶科能源有限公司 | P-type IBC battery structures and preparation method thereof |
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| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140625 Termination date: 20181127 |
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| CF01 | Termination of patent right due to non-payment of annual fee |