CN103594529A - MWT and passivation combined crystal silicon solar cell and manufacturing method thereof - Google Patents
MWT and passivation combined crystal silicon solar cell and manufacturing method thereof Download PDFInfo
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- CN103594529A CN103594529A CN201310612664.9A CN201310612664A CN103594529A CN 103594529 A CN103594529 A CN 103594529A CN 201310612664 A CN201310612664 A CN 201310612664A CN 103594529 A CN103594529 A CN 103594529A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 41
- 239000010703 silicon Substances 0.000 title claims abstract description 41
- 239000013078 crystal Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000002161 passivation Methods 0.000 title claims abstract description 18
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052709 silver Inorganic materials 0.000 claims abstract description 17
- 239000004332 silver Substances 0.000 claims abstract description 17
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000007639 printing Methods 0.000 claims abstract description 8
- 238000005245 sintering Methods 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims abstract description 4
- 238000005553 drilling Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 23
- 239000004411 aluminium Substances 0.000 claims description 17
- 239000011440 grout Substances 0.000 claims description 15
- 238000003475 lamination Methods 0.000 claims description 14
- 239000002002 slurry Substances 0.000 claims description 8
- 235000008216 herbs Nutrition 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- 230000003667 anti-reflective effect Effects 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 229910004205 SiNX Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- 229910004012 SiCx Inorganic materials 0.000 claims description 2
- 229910003087 TiOx Inorganic materials 0.000 claims description 2
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 2
- 239000011574 phosphorus Substances 0.000 abstract description 2
- 238000005498 polishing Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 238000010079 rubber tapping Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 25
- 238000005516 engineering process Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000003854 Surface Print Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an MWT and passivation combined crystal silicon solar cell and a manufacturing method thereof. The crystal silicon solar cell comprises a passivating film, a phosphorus diffusion layer, a P-type silicon substrate, an aluminum oxide film, a laminated protective film and an aluminum printing layer structure which are sequentially superposed, and a through-hole silver electrode penetrates the crystal silicon solar cell. The manufacturing method of the crystal silicon solar cell comprises the steps of drilling, flocking, diffusing, polishing, film growth, tapping, hole filling, printing, sintering and the like. The MWT and passivation combined crystal silicon solar cell has the advantages of being low in cost and capable of being produced in a mass mode.
Description
Technical field
The present invention relates to a kind of structure and manufacture method of solar cell, be specifically related to crystal silicon solar batteries and manufacture method thereof that a kind of MWT is combined with back of the body passivation.
Background technology
Modernization solar cell industryization is produced towards high efficiency, low cost future development, MWT(Metal wrap through) technology combines as the representative of high efficiency, low cost developing direction with carrying on the back passivation (PERC) technology, has following advantage:
(1) extremely low positive shading: MWT technology is guided to the back side of battery by the mode of holing on silicon chip by main grid line (busbar), thus the metal electrode shading of battery towards sunny side reduced;
(2) excellent back reflector: because the existence of cell backside deielectric-coating makes interior back reflection be increased to 92-95% from the full aluminium back surface field 65% of routine.The absorption of the longwave optical increasing on the one hand, especially provides technical assurance to the trend of following Thin film cell on the other hand;
(3) superior passivating back technology: due to the good passivation of back side deielectric-coating, can by back side recombination rate from the full aluminium back of the body ~ 1000cm/s is reduced to 100-200cm/s;
(4) good synergy, there is natural marriage relation in positive MWT technology and passivating back technology, and material path has membrane action with the surrounding of back of the body surface handing-over, has naturally isolated contacting of grout slurry and silicon.
Although the outer numerous companies of Present Domestic and research unit are all at development monocrystalline silicon back side point contact solar cell and MWT battery, not yet occurring can volume production structure and preparation method by the low cost of both combinations.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides crystal silicon solar batteries and manufacture method thereof that a kind of MWT is combined with back of the body passivation.
Technical scheme: for solving the problems of the technologies described above, the crystal silicon solar batteries that MWT provided by the invention is combined with back of the body passivation, comprise the passivating film of stack successively, phosphorus-diffused layer, P type silicon substrate, aluminum oxide film, lamination diaphragm and aluminium printed-layer structure, on said structure, there is through hole, in hole, be coated with grout silver electrode, between hole wall and grout silver electrode, be coated with dielectric film, the top of described grout silver electrode is coated with positive silver electrode, the spaced projection of tool in described aluminium printed layers, described projection contacts with aluminum oxide film and with P type silicon substrate formation local aluminium back surface field through lamination diaphragm.
Preferably, described phosphorus-diffused layer is N-shaped layer, and its sheet resistance value is 30-120ohm/sq.
Preferably, described passivating film is SiNx or SiOx antireflective passive film.
Preferably, described aluminum oxide film film thickness is 1-100nm.
Preferably, described lamination diaphragm is SiNx, SiCx or TiOx.
The present invention proposes the method processed of above-mentioned MWT and the back of the body passivation crystal silicon solar batteries of being combined simultaneously, comprises the following steps:
1) laser drill;
2) silicon chip goes damage making herbs into wool, and making herbs into wool face is laser terminal surface;
3) diffusion;
4) remove back side phosphorosilicate glass, and realize polished backside;
5) back side aluminum oxide film and the growth of lamination diaphragm;
6) front antireflection film growth;
7) back side, back side aluminum oxide film and the perforate of lamination diaphragm;
8) print overleaf grout slurry;
9) the printing back of the body is silver-colored overleaf;
10) printing back of the body aluminium, just silver-colored, sintering, test.
Preferably, in described step 4), adopt online roller type equipment one side to remove back side phosphorosilicate glass.
Preferably, the laser that in described step 1), laser drill adopts is ruddiness or green laser.
Preferably, the boring method in described step 7) and be the perforate of corrosivity slurry or laser beam drilling.
Preferably, described step 8) and step 9) adopt slurry printing of the same race simultaneously.
Preferably, in described step 10), sintering adopts laser sintered method to form the contact of back side point.
Beneficial effect: the invention provides a kind of structure and manufacture method that can the efficient crystal silicon solar batteries of volume production, can make full use of the conventional batteries production equipment that current enterprise production line has possessed, do not increase every watt of manufacturing cost of battery.In the time of growth front and back film, also deposition medium film in laser drill, not only passivation hole wall, and effectively isolated contacting of grout electrode and silicon; Boring step is placed on before making herbs into wool step, also helps the removal of laser damage.
Accompanying drawing explanation
The structural representation of Fig. 1 embodiments of the invention;
Each label in figure: antireflective film 1, phosphorus-diffused layer 2, P type silicon substrate 3, aluminum oxide film 4, lamination diaphragm 5, aluminium printed layers 6, grout silver electrode 7, positive silver electrode 8, local aluminium back surface field contact 9.
Embodiment
Embodiment: the structure of the crystal silicon solar batteries that the MWT of the present embodiment is combined with back of the body passivation as shown in Figure 1, comprise the antireflective film 1 of stack successively, phosphorus-diffused layer 2, P type silicon substrate 3, aluminum oxide film 4, lamination diaphragm 5, aluminium printed layers 6 structures, on said structure, there is through hole, in hole, be coated with grout silver electrode 7, between hole wall and grout silver electrode 7, be coated with dielectric film, the top of grout silver electrode 7 is coated with positive silver electrode 8, the spaced projection of tool in aluminium printed layers 6, projection contacts 9 through lamination diaphragm 5 with aluminum oxide film 4 and with P type silicon substrate 3 formation local aluminium back surface fields.
The 156mm p type single crystal silicon sheet of take is basis material, and the concrete steps of manufacture method are as follows:
(1) at silicon chip back side, adopt red laser to hole, figure is 4*4 matrix, and bore diameter is 200um, and spacing is 38.5mm;
(2) silicon chip is gone to damage making herbs into wool, clean;
(3) tubular type phosphorus diffusion, diffused sheet resistance 75 ohm/sq;
(4) wet method in line equipment back side phosphorosilicate glass (PSG) is removed, polished backside;
(5) at the back of the body superficial growth aluminum oxide film of silicon chip, the about 10nm of thickness;
(6) at the front surface of silicon chip, use the method grown silicon nitride antireflective film 80nm of PECVD;
(7) on the back of the body surface of silicon chip, use method growing silicon oxide/silicon nitride stack film 120nm of PECVD;
(8) green laser film processed, opens film, exposes silicon substrate, and live width is 35um, and spacing is 700um;
(9) on the back of the body surface of silicon chip, adopt the method for silk screen printing to print grout electrode and backplate simultaneously;
(10) back up aluminium back surface field, in the front surface printing grid line of silicon chip, sintering, test.
After plated film and perforate finish, battery front surface printed silver grid line, back of the body surface printing aluminium back surface field and electrode, after co-sintering, battery completes.Sintering can adopt laser sintered method, and after the stack membrane growth of pellumina and diaphragm finishes, printed silver is starched and dried, and directly utilizes LFC technique to form the contact of back side point.On lamination rete, perforate can adopt the method for the perforate of corrosivity slurry or laser beam drilling.
After tested, the single crystal battery conversion efficiency batch average efficiency that the present embodiment makes reaches 20.3%.
The present invention provides a kind of new production model theory for the efficient crystal silicon solar batteries of volume production, and applicability and workable, is implying huge use value.
The above-mentioned foundation desirable embodiment of the present invention of take is enlightenment, and by above-mentioned description, relevant staff can, within not departing from the scope of this invention technological thought, carry out various change and modification completely.The technical scope of this invention is not limited to the content on specification, must determine its technical scope according to claim scope.
Claims (10)
1. the crystal silicon solar batteries that a MWT is combined with back of the body passivation; it is characterized in that comprising: the passivating film, phosphorus-diffused layer, P type silicon substrate, aluminum oxide film, lamination diaphragm and the aluminium printed-layer structure that superpose successively; on said structure, there is through hole; in hole, be coated with grout silver electrode; between hole wall and grout silver electrode, be coated with dielectric film; the top of described grout silver electrode is coated with positive silver electrode; the spaced projection of tool in described aluminium printed layers, described projection contacts with aluminum oxide film and with P type silicon substrate formation local aluminium back surface field through lamination diaphragm.
2. the crystal silicon solar batteries that MWT as claimed in claim 1 is combined with back of the body passivation, is characterized in that: described phosphorus-diffused layer is N-shaped layer, its sheet resistance value is 30-120ohm/sq.
3. the crystal silicon solar batteries that MWT as claimed in claim 1 is combined with back of the body passivation, is characterized in that: described passivating film is SiNx or SiOx antireflective passive film.
4. the crystal silicon solar batteries that MWT as claimed in claim 1 is combined with back of the body passivation, is characterized in that: described aluminum oxide film film thickness is 1-100nm.
5. the crystal silicon solar batteries that MWT as claimed in claim 1 is combined with back of the body passivation, is characterized in that: described lamination diaphragm is SiNx, SiCx or TiOx.
6. the manufacture method of the crystal silicon solar batteries that MWT as claimed in claim 1 is combined with back of the body passivation, is characterized in that comprising the following steps:
1) laser drill;
2) silicon chip goes damage making herbs into wool, and making herbs into wool face is laser terminal surface;
3) diffusion;
4) remove back side phosphorosilicate glass, and realize polished backside;
5) back side aluminum oxide film and the growth of lamination diaphragm;
6) front antireflection film growth;
7) back side, back side aluminum oxide film and the perforate of lamination diaphragm;
8) print overleaf grout slurry;
9) the printing back of the body is silver-colored overleaf;
10) printing back of the body aluminium, just silver-colored, sintering, test.
7. manufacture method as claimed in claim 6, is characterized in that: in described step 4), adopt online roller type equipment one side to remove back side phosphorosilicate glass.
8. manufacture method as claimed in claim 6, is characterized in that: the boring method in described step 7) and be the perforate of corrosivity slurry or laser beam drilling.
9. manufacture method as claimed in claim 6, is characterized in that: described step 8) and step 9) adopt slurry printing of the same race simultaneously.
10. manufacture method as claimed in claim 6, is characterized in that: in described step 10), sintering adopts laser sintered method to form the contact of back side point.
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| CN201310612664.9A CN103594529A (en) | 2013-11-27 | 2013-11-27 | MWT and passivation combined crystal silicon solar cell and manufacturing method thereof |
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| CN201310612664.9A CN103594529A (en) | 2013-11-27 | 2013-11-27 | MWT and passivation combined crystal silicon solar cell and manufacturing method thereof |
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304730A (en) * | 2015-09-23 | 2016-02-03 | 浙江正泰太阳能科技有限公司 | MWT cell with back passive film and preparation method thereof |
| CN107425085A (en) * | 2017-03-30 | 2017-12-01 | 陈文英 | A kind of preparation method of the back contacts crystal silicon solar batteries of passivating back |
| CN107863404A (en) * | 2017-12-05 | 2018-03-30 | 君泰创新（北京）科技有限公司 | Solar battery sheet and preparation method thereof, solar cell string and photovoltaic module |
| CN108110089A (en) * | 2017-12-28 | 2018-06-01 | 南京日托光伏科技股份有限公司 | A kind of processing method of MWT battery plug-hole defective products |
| CN108198906A (en) * | 2017-12-29 | 2018-06-22 | 南京日托光伏科技股份有限公司 | A kind of preparation method of efficient MWT solar cells |
| CN108305916A (en) * | 2018-03-05 | 2018-07-20 | 通威太阳能（成都）有限公司 | A kind of MWT battery manufacture craft based on plating masking diaphragm plate |
| CN109273536A (en) * | 2018-12-05 | 2019-01-25 | 苏州阿特斯阳光电力科技有限公司 | Solar battery and photovoltaic module |
| CN109585597A (en) * | 2018-10-12 | 2019-04-05 | 浙江爱旭太阳能科技有限公司 | A method of improving tubular type crystal silicon solar PERC battery front side around plating |
| CN109713053A (en) * | 2018-12-27 | 2019-05-03 | 江苏日托光伏科技股份有限公司 | A kind of preparation method of MWT solar battery |
| CN109768120A (en) * | 2018-12-29 | 2019-05-17 | 江苏日托光伏科技股份有限公司 | A kind of preparation method of the MWT without exposure mask solar battery |
| CN109935642A (en) * | 2019-03-29 | 2019-06-25 | 江苏日托光伏科技股份有限公司 | The solar battery and its manufacturing method of a kind of MWT in conjunction with TopCon |
| CN110429154A (en) * | 2019-08-14 | 2019-11-08 | 宁波尤利卡太阳能科技发展有限公司 | A kind of patch battery and preparation method thereof |
| CN111987171A (en) * | 2020-09-03 | 2020-11-24 | 江苏日托光伏科技股份有限公司 | MWT battery piece and screen printing method thereof |
| CN113224191A (en) * | 2021-04-28 | 2021-08-06 | 宜兴市昱元能源装备技术开发有限公司 | Photovoltaic cell substrate and preparation method thereof |
| CN113314624A (en) * | 2021-07-27 | 2021-08-27 | 江苏赛拉弗光伏系统有限公司 | MWT battery piece, MWT battery string and preparation method |
| CN115347056A (en) * | 2022-10-19 | 2022-11-15 | 北京晶澳太阳能光伏科技有限公司 | Solar cell |
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