CN103022262A - Preparation method of back point contact solar cell - Google Patents
Preparation method of back point contact solar cell Download PDFInfo
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- CN103022262A CN103022262A CN2013100022449A CN201310002244A CN103022262A CN 103022262 A CN103022262 A CN 103022262A CN 2013100022449 A CN2013100022449 A CN 2013100022449A CN 201310002244 A CN201310002244 A CN 201310002244A CN 103022262 A CN103022262 A CN 103022262A
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Abstract
The invention discloses a preparation method of a back point contact solar cell. The preparation method includes the steps of firstly, removing silicon wafer damage and making texture surface; secondly, diffusing; thirdly, removing back PSG (phosphosilicate glass), polishing the back, and removing front PSG and cleaning; fourthly, growing back aluminum oxide/silicon nitride lamination; fifthly, growing front antireflection films; sixthly, poring the back; seventhly, screen printing back silver, back aluminum and front silver; and eighthly, sintering and testing. By the modifying preparation method of solar cells, production cost is reduced effectively. In addition, the preparation method is suitable for batch production.
Description
Technical field
The present invention relates to a kind of preparation method of solar cell.
Background technology
Modernization solar cell suitability for industrialized production is towards the high efficiency, low cost future development, and back side point contact PERC battery it is advantageous that as the representative of high efficiency, low cost developing direction:
(1) excellent back reflector: because the existence of cell backside deielectric-coating is so that interior back reflection is increased to 92-95% from the full aluminium back surface field 65% of routine.The long wave Optical Absorption that increases on the one hand especially provides technical assurance to the trend of following Thin film cell on the other hand;
(2) superior passivating back technology: because the good passivation of back side deielectric-coating, can with back side recombination rate from the full aluminium back of the body ~ 1000cm/s is reduced to 100-200cm/s;
Although the outer numerous companies of Present Domestic and research unit are all at development monocrystalline silicon back side point contact solar cell, but the present preparation method who does not still find the low cost volume production.The research of polysilicon back millet cake contact battery still is in the initial stage on the other hand, although also have company such as Q-Cell to develop polysilicon back millet cake contact solar cell abroad, but all the time polysilicon back millet cake of neither one low cost volume production contact solar cell preparation method.
Summary of the invention
Goal of the invention: for the problems referred to above, the purpose of this invention is to provide a kind of can effectively reducing production costs, can realize the preparation method of the back side point contact solar cell of mass production.
Technical scheme: in order to solve the deficiencies in the prior art, the preparation method of a kind of back side point contact solar cell provided by the invention is characterized in that: comprise step
(a) silicon chip goes damage and making herbs into wool;
(b) phosphorus diffusion;
(c) phosphorosilicate glass PSG in the back side removes, polished backside, and positive PSG removes and cleans;
(d) back side aluminium oxide/silicon nitride stack film growth;
(e) front antireflection film growth;
(f) back side perforate;
(g) silk screen printing back of the body silver, back of the body aluminium, positive silver;
(h) sintering, test;
Step (c) described back side phosphorosilicate glass PSG removes, polished backside, and the method that positive PSG removes and cleans is for adopting online roller type equipment, and single face is removed PSG.
Silicon chip described in the step (a) is the p-type silicon chip, resistivity 0.5-6 ohmcm.
Described step (b) phosphorus diffuses to form the N-shaped layer, and the sheet resistance value is 30-120ohm/sq, and penetrates layer at N-shaped layer growth SiNx or SiOx passivated reflection reducing.
The described cell backside of described step (d) back side aluminium oxide/silicon nitride stack film growth adopts SiNx, SiCx or TiOx to carry out passivation.
Described step (g) silk screen printing back of the body silver, back of the body aluminium, positive silver is battery front surface printing Ag grid line, back of the body surface printing aluminium back surface field and electrode.
The front antireflection film of described step (e) is grown in battery front side printing Al slurry and oven dry, directly utilizes LFC technique to form the contact of back side point.
Step (f) described back side perforate is laser beam drilling or adopts the perforate of corrosive slurry etching.
Its generation type of back of the body aluminium described in the step (g) is that first film perforate aluminium paste conventional oven sintering forms or laser sintered formation.
Beneficial effect: compared with prior art, the preparation method of a kind of back side point contact solar cell provided by the invention, by polished backside and the removal of back side emitter junction are combined into step realization, simplify production stage, save the production time, raise the efficiency, do not increase simultaneously in the situation of every watt of manufacturing cost of battery and produce back side point contact solar cell in enormous quantities.
Description of drawings
Fig. 1 is the structural representation of back side point contact solar cell.
Fig. 2 is the test comparison figure of back side point contact solar cell.
Fig. 3 is the test comparison figure of back side point contact solar cell.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the present invention, should understand these embodiment only is used for explanation the present invention and is not used in and limits the scope of the invention, after having read the present invention, those skilled in the art all fall within the application's claims limited range to the modification of the various equivalent form of values of the present invention.
But preparation method's example of a kind of back side point of volume production contact single crystal silicon solar cell, take the p type single crystal silicon sheet as basis material, the concrete steps of manufacture method are as follows:
(a) P type silicon chip 4 goes damage and making herbs into wool, cleans;
(b) tubular type phosphorus diffuses to form n shape layer 3, diffused sheet resistance 75 ohm/sq, and penetrate layer 2 at N-shaped layer 3 growth SiOx passivated reflection reducings;
(c) adopt wet method in line equipment that P type silicon chip 4 back side phosphorosilicate glass PSG are removed, polished backside, positive PSG removes and cleans;
(d) at the back of the body superficial growth aluminium oxide passivation film 5 of P type silicon chip 4, thickness is 10nm;
(e) be 80nm at the front surface of P type silicon chip 4 with method growing silicon oxide/silicon nitride anti-reflection film 2 thickness of PECVD;
(f) thickness at the surperficial method growing silicon oxide with PECVD of the back of the body of P type silicon chip 4/silicon nitride stack film 5 is 120nm;
(g) laser beam drilling;
(h) in back of the body surface printing back electrode and the aluminium back surface field 6 of silicon chip, at the front surface printing grid line 1 of silicon chip;
(i) sintering, test.
As shown in Figure 2, the battery conversion efficiency third party is just, can reach 19.9, and optical attenuation, the back surface field pulling force, and the reliability testing of assembly end all meets the TUV standard.
Embodiment 2:
But preparation method's example of a kind of back side point of volume production contact polycrystalline silicon solar cell, take P type polysilicon chip as basis material, the concrete steps of manufacture method are as follows:
(1) P type silicon chip 4 goes damage and making herbs into wool, cleans;
(2) P type silicon chip 4 tubular type phosphorus diffusion forms n shape layer 3, diffused sheet resistance 75 ohm/sq, and penetrate layer 2 at N-shaped layer 3 growth SiOx passivated reflection reducing;
(3) adopt wet method in line equipment back side phosphorosilicate glass PSG to remove, polished backside, positive PSG removes and cleans;
(4) back of the body superficial growth aluminium oxide passivation film 5 thickness at P type silicon chip 4 are 10nm;
(5) at the front surface of the silicon chip method grown silicon nitride antireflective film 280nm with PECVD;
(6) at the surperficial method growing silicon oxide with PECVD of the back of the body of silicon chip/silicon nitride stack film 120nm;
(7) laser beam drilling;
(8) in back of the body surface printing back electrode and the aluminium back surface field 6 of silicon chip, at the front surface printing grid line 1 of silicon chip;
(9) sintering, test.
As shown in Figure 3, a polycrystalline battery conversion efficiency batch average efficiency reaches 18%, and optical attenuation, the back surface field pulling force, and the reliability testing of assembly end all meets the TUV standard.
Claims (8)
1. the preparation method of a back side point contact solar cell is characterized in that: comprise step
(a) silicon chip (4) goes damage and making herbs into wool;
(b) phosphorus diffusion;
(c) phosphorosilicate glass PSG in the back side removes, polished backside, and positive PSG removes and cleans;
(d) back side aluminium oxide/silicon nitride stack film growth;
(e) front antireflection film growth;
(f) back side perforate;
(g) silk screen printing back of the body aluminium, positive silver;
(h) sintering, test;
Step (c) described back side phosphorosilicate glass PSG removes, polished backside, and the method that positive PSG removes and cleans is for adopting online roller type equipment, and single face is removed PSG.
2. the preparation method of a kind of back side point contact solar cell according to claim 1, it is characterized in that: the silicon chip described in the step (a) is p-type silicon chip (4), resistivity 0.5-6 ohmcm.
3. the preparation method of a kind of back side point contact solar cell according to claim 1, it is characterized in that: described step (b) phosphorus diffuses to form N-shaped layer (3), the sheet resistance value is 30-120ohm/sq, and penetrates layer (2) at N-shaped layer (3) growth SiNx or SiOx passivated reflection reducing.
4. the preparation method of a kind of back side point contact solar cell according to claim 1 is characterized in that: the described cell backside aluminium oxide/silicon nitride stack of described step (d) (5) film growth adopts SiNx, SiCx or TiOx to carry out passivation.
5. the preparation method of a kind of back side point contact solar cell according to claim 1, it is characterized in that: the positive silver silver of described step (g) silk screen printing, back of the body aluminium, described positive silver is at battery front surface printing Ag grid line (1), back of the body surface printing aluminium back surface field (6) and electrode.
6. the preparation method of a kind of back side point contact solar cell according to claim 1 is characterized in that: the front antireflection film of described step (e) is grown in battery front side printing Al slurry and oven dry, directly utilizes LFC technique to form back side point and contacts.
7. the preparation method of a kind of back side point contact solar cell according to claim 1 is characterized in that: step (f) described back side perforate is laser beam drilling or adopts the perforate of corrosive slurry etching.
8. the preparation method of a kind of back side point contact solar cell according to claim 1 is characterized in that: its generation type of back of the body aluminium described in the step (g) is that first film perforate aluminium paste conventional oven sintering forms or laser sintered formation.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103456837A (en) * | 2013-08-26 | 2013-12-18 | 镇江大全太阳能有限公司 | Method for manufacturing solar cell with local back surface field passivation |
| CN104009121A (en) * | 2014-05-22 | 2014-08-27 | 奥特斯维能源（太仓）有限公司 | Preparation method of P-type crystalline silicon double-sided grooved buried contact cell |
| CN104201245A (en) * | 2014-09-12 | 2014-12-10 | 合肥海润光伏科技有限公司 | Back-passivation PERC crystalline silicon solar cell production method |
| CN104201252A (en) * | 2014-09-22 | 2014-12-10 | 苏州阿特斯阳光电力科技有限公司 | PERC (passivated emitter and locally diffused rear contact) solar cell preparation method |
| CN105745764A (en) * | 2013-09-16 | 2016-07-06 | 特殊材料研究与技术有限公司（斯派克迈特） | Methods, apparatus, and systems for passivation of solar cells and other semiconductor devices |
| CN106057925A (en) * | 2016-07-31 | 2016-10-26 | 湖南工程学院 | Manufacturing method of front surface electrode side winding back contact P type crystalline silicon solar cell |
| CN106981522A (en) * | 2017-03-03 | 2017-07-25 | 浙江爱旭太阳能科技有限公司 | PERC solar cells of photoelectric transformation efficiency and preparation method thereof can be improved |
| CN107331735A (en) * | 2017-08-29 | 2017-11-07 | 浙江晶科能源有限公司 | A kind of preparation method of the two-sided PERC solar cells with back side silver grating line |
| WO2018209728A1 (en) * | 2017-05-18 | 2018-11-22 | 广东爱康太阳能科技有限公司 | Tubular perc single-sided photovoltaic cell and method for fabrication thereof and dedicated device |
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Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103456837B (en) * | 2013-08-26 | 2016-05-11 | 镇江大全太阳能有限公司 | The manufacture method of local back surface field passivation solar cell |
| CN103456837A (en) * | 2013-08-26 | 2013-12-18 | 镇江大全太阳能有限公司 | Method for manufacturing solar cell with local back surface field passivation |
| CN105745764B (en) * | 2013-09-16 | 2018-08-14 | 特殊材料研究与技术有限公司（斯派克迈特） | The method, apparatus and system of passivation for solar cell and other semiconductor devices |
| CN105745764A (en) * | 2013-09-16 | 2016-07-06 | 特殊材料研究与技术有限公司（斯派克迈特） | Methods, apparatus, and systems for passivation of solar cells and other semiconductor devices |
| CN104009121A (en) * | 2014-05-22 | 2014-08-27 | 奥特斯维能源（太仓）有限公司 | Preparation method of P-type crystalline silicon double-sided grooved buried contact cell |
| CN104009121B (en) * | 2014-05-22 | 2016-05-18 | 奥特斯维能源（太仓）有限公司 | The two-sided grooving and grid burying battery preparation method of P type crystalline silicon |
| CN104201245A (en) * | 2014-09-12 | 2014-12-10 | 合肥海润光伏科技有限公司 | Back-passivation PERC crystalline silicon solar cell production method |
| CN104201252B (en) * | 2014-09-22 | 2016-08-17 | 苏州阿特斯阳光电力科技有限公司 | A kind of preparation method of PERC solaode |
| CN104201252A (en) * | 2014-09-22 | 2014-12-10 | 苏州阿特斯阳光电力科技有限公司 | PERC (passivated emitter and locally diffused rear contact) solar cell preparation method |
| CN106057925A (en) * | 2016-07-31 | 2016-10-26 | 湖南工程学院 | Manufacturing method of front surface electrode side winding back contact P type crystalline silicon solar cell |
| CN106057925B (en) * | 2016-07-31 | 2017-07-04 | 湖南工程学院 | A kind of manufacture method of front electrode side around back contacts p-type crystal silicon solar battery |
| CN106981522A (en) * | 2017-03-03 | 2017-07-25 | 浙江爱旭太阳能科技有限公司 | PERC solar cells of photoelectric transformation efficiency and preparation method thereof can be improved |
| US11024753B2 (en) | 2017-03-03 | 2021-06-01 | Guangdong Aiko Solar Energy Technology Co., Ltd. | PERC solar cell capable of improving photoelectric conversion efficiency and preparation method thereof |
| WO2018209728A1 (en) * | 2017-05-18 | 2018-11-22 | 广东爱康太阳能科技有限公司 | Tubular perc single-sided photovoltaic cell and method for fabrication thereof and dedicated device |
| EP3627561A4 (en) * | 2017-05-18 | 2020-10-28 | Guangdong Aiko Solar Energy Technology Co., Ltd. | Tubular perc single-sided photovoltaic cell and method for fabrication thereof and dedicated device |
| CN107331735A (en) * | 2017-08-29 | 2017-11-07 | 浙江晶科能源有限公司 | A kind of preparation method of the two-sided PERC solar cells with back side silver grating line |
| CN107331735B (en) * | 2017-08-29 | 2018-12-28 | 浙江晶科能源有限公司 | A kind of production method of the two-sided PERC solar cell with back side silver grating line |
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Application publication date: 20130403 |