CN107331735B - A kind of production method of the two-sided PERC solar cell with back side silver grating line - Google Patents
A kind of production method of the two-sided PERC solar cell with back side silver grating line Download PDFInfo
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- CN107331735B CN107331735B CN201710757156.8A CN201710757156A CN107331735B CN 107331735 B CN107331735 B CN 107331735B CN 201710757156 A CN201710757156 A CN 201710757156A CN 107331735 B CN107331735 B CN 107331735B
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 84
- 239000004332 silver Substances 0.000 title claims abstract description 84
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 84
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 83
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 83
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 83
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 48
- 239000004411 aluminium Substances 0.000 claims abstract description 38
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000007639 printing Methods 0.000 claims abstract description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 238000007650 screen-printing Methods 0.000 claims description 10
- 238000005245 sintering Methods 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 235000008216 herbs Nutrition 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 210000002268 wool Anatomy 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 238000005554 pickling Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 229940037003 alum Drugs 0.000 description 8
- 239000010703 silicon Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 239000002585 base Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009766 low-temperature sintering Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 241000127225 Enceliopsis nudicaulis Species 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
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- 230000007704 transition Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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Abstract
The production method of this application discloses a kind of two-sided PERC solar cell with back side silver grating line, including on P-type substrate production there is the two-sided PERC solar cell of back aluminium grid line；The back aluminium grid line of the two-sided PERC solar cell is removed, back side groove is formed, the side adjacent with the P-type substrate of the back side groove forms Al-BSF；Embedded printing silver grating line, the silver grating line are connected to the P-type substrate by the Al-BSF in the back side groove；The silver grating line is sintered.The production method of the above-mentioned two-sided PERC solar cell with back side silver grating line can reduce back side resistance, while improve the fill factor of two-sided PERC battery, reduce the width of back side grid line, reduce the shading-area at the back side.
Description
Technical field
The present invention relates to filed of crystal silicon solaode technique, more specifically to a kind of with back side silver grating line
The production method of two-sided PERC solar cell.
Background technique
It improves, is chased after for solar cell high conversion efficiency and component high-output power with the development of photovoltaic industry
It asks, more and more high-efficiency battery technologies are applied in the commercialization volume production of crystal-silicon solar cell.Wherein important one kind
High-efficiency battery technology is passivation emitter rear-face contact technology (Passivated Emitter backcontact, PERC).This
Kind technology Al2O3/SiNxOverlayer passivation film substitutes the Al-BSF of existing solar cell, substantially improves the crystalline silicon sun
The passivation effect of cell backside improves the internal quantum efficiency of medium-long wave band, so that the volume production efficiency of crystal-silicon solar cell mentions
It is about 1 percentage point high.Newest volume production PERC battery structure is just being gradually transitions two-sided PERC battery, compares PERC battery,
Two-sided PERC battery is not required to additional process process and equipment, and all standing aluminium of PERC battery is replaced using only the thin grid line of aluminium
Layer, the line-like area that the thin grid line of aluminium and two-sided PERC cell backside locally open film coincide, and by opening diaphragm area and silicon chip
It is connected, realizes electric current transmission.It is Al between the thin grid line of back aluminium2O3/SiNxOverlayer passivation film can absorb in environment
Reflected light this makes it possible to increase additional output power, while also reducing the dosage of back side aluminum slurry.Since the two are excellent
Gesture, two-sided PERC battery are more and more paid attention to.
The production method of existing two-sided PERC solar cell includes the following steps: alkali making herbs into wool, phosphorus diffusion, removes PSG and back
Face polishing, backside deposition aluminum oxide film and silicon nitride film, front cvd nitride silicon thin film, backside laser are partially stripped oxidation
Aluminium/silicon nitride film, silk-screen printing rear electrode and back aluminium grid line, silk-screen printing front electrode and sintering, by above-mentioned work
The two-sided PERC cell backside of skill flow manufacturing collects back side electric current using alum gate line, due to the thin grid line of silk-screen printing sintered aluminium
Line resistance it is bigger so that two-sided PERC battery has on more in series resistance compared to existing single side PERC battery
It rises, the fill factor of two-sided PERC battery is reduced, for the fill factor for taking into account two-sided PERC battery, it usually needs increase the back side
The width of alum gate line is to 300um or so, which adds the shading-area at the back side, reduces and utilizes effect to Ambient
Fruit.
Summary of the invention
In order to solve the above technical problems, the present invention provides a kind of two-sided PERC solar cell with back side silver grating line
Production method can reduce back side resistance, while improving the fill factor of two-sided PERC battery, reduce the width of back side grid line
Degree, reduces the shading-area at the back side.
A kind of production method of two-sided PERC solar cell with back side silver grating line provided by the invention, comprising:
Production has the two-sided PERC solar cell of back aluminium grid line on P-type substrate；
Remove the back aluminium grid line of the two-sided PERC solar cell, form back side groove, the back side groove with institute
It states the adjacent side of P-type substrate and forms Al-BSF；
Embedded printing silver grating line, the silver grating line are connected to the P by the Al-BSF in the back side groove
Type substrate；
The silver grating line is sintered.
Preferably, in the production method of the above-mentioned two-sided PERC solar cell with back side silver grating line, the removal institute
State the back aluminium grid line of two-sided PERC solar cell are as follows:
Using the mixed solution of hydrochloric acid and nitric acid to the back aluminium grid line pickling 30 seconds of the two-sided PERC solar cell extremely
90 seconds, remove the back aluminium grid line of the two-sided PERC solar cell.
Preferably, in the production method of the above-mentioned two-sided PERC solar cell with back side silver grating line, the formation back
Face groove are as follows:
Formation depth is 5 microns of back side grooves for being 30 microns to 60 microns to 25 microns and width.
Preferably, described described in the production method of the above-mentioned two-sided PERC solar cell with back side silver grating line
Embedded printing silver grating line in the groove of the back side are as follows:
The silver paste that weight range is 0.9 gram to 1.3 grams is printed in each back side groove, forms the silver-colored grid
Line.
Preferably, described to described in the production method of the above-mentioned two-sided PERC solar cell with back side silver grating line
Silver grating line is sintered are as follows:
It is 550 DEG C to 600 DEG C that sintering range, which is arranged, and the sintering time scope for being arranged 500 DEG C or more be 3 seconds extremely
30 seconds, the silver grating line is sintered.
Preferably, described in p-type base in the production method of the above-mentioned two-sided PERC solar cell with back side silver grating line
Two-sided PERC solar cell of the production with back aluminium grid line includes: on bottom
Alkali making herbs into wool and phosphorus diffusion are carried out on the P-type substrate；
Remove PSG and polished backside；
In the backside deposition aluminum oxide film and silicon nitride film of the P-type substrate；
The aluminum oxide film and the silicon nitride film are partially stripped at the back side of the P-type substrate；
Silk-screen printing rear electrode and back aluminium grid line；
Silk-screen printing front electrode is simultaneously sintered.
It can be seen from the above technical proposal that the above-mentioned two-sided PERC sun with back side silver grating line provided by the present invention
The production method of battery, due on P-type substrate production have back aluminium grid line two-sided PERC solar cell after, further include
Remove the back aluminium grid line of the two-sided PERC solar cell, form back side groove, the back side groove with the P-type substrate
Adjacent side forms Al-BSF；Embedded printing silver grating line, the silver grating line are carried on the back by the aluminium in the back side groove
Field is connected to the P-type substrate；The silver grating line is sintered, therefore back side resistance can reduced, improves two-sided PERC
While the fill factor of battery, reduces the width of back side grid line, reduce the shading-area at the back side.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is the production side of the first two-sided PERC solar cell with back side silver grating line provided by the embodiments of the present application
The schematic diagram of method.
Specific embodiment
Core of the invention thought is to provide a kind of production side of two-sided PERC solar cell with back side silver grating line
Method can reduce back side resistance, while improving the fill factor of two-sided PERC battery, reduce the width of back side grid line, drop
The shading-area at the low back side.
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The production method of the first two-sided PERC solar cell with back side silver grating line provided by the embodiments of the present application is such as
Shown in Fig. 1, Fig. 1 is the production side of the first two-sided PERC solar cell with back side silver grating line provided by the embodiments of the present application
The schematic diagram of method, this method comprises the following steps:
S1: production has the two-sided PERC solar cell of back aluminium grid line on P-type substrate；
It should be noted that in this step, effect that there are two the thin grid lines of printed back aluminium and sintering, wherein first
Effect is to form back side groove, mixes Al the other is being formed in the bottom of groove3+Al-BSF.Al-BSF can make silver and p-type
Silicon base forms good contact resistance.
S2: the back aluminium grid line of the removal two-sided PERC solar cell forms back side groove, the back side groove with
The adjacent side of the P-type substrate forms Al-BSF；
Specifically, alum gate line and P-type substrate pass through back side Al in previous step in the pyroprocess of sintering process2O3/SiN
Mutually molten diffusion occurs for the window being partially stripped, so that the back side that the P-type substrate back side forms the U-shaped of deep about 20um, width about 50um is recessed
Slot, while Al is mixed in the silicon base formation of back side groove side3+Al-BSF, the groove other side is alum gate line, this step can be
Dilute HCl/HNO3The reaction of alum gate line generates AlCl in acid system3And AlNO3, and dissolve in the solution to be removed, leave U
The back side groove of shape, wherein HCl/HNO3The concentration of acid system solution is between 1%-5%.
S3: embedded printing silver grating line, the silver grating line are connected to institute by the Al-BSF in the back side groove
State P-type substrate；
It should be noted that silver paste is printed in the groove of the back side by way of exactitude position in the program, formed
The silver grating line of grid is buried at the back side, to avoid back silver main grid from destroying the Al at the back side2O3/Si3N4Laminate film, printed silver paste
For not with Si3N4The non-penetrative silver paste of reaction, the main component of rear electrode are ag materials, and it is two-sided that grid are buried at this back side
The back side grid line of PERC battery is made of main grid and thin grid, and the main component of the two is all silver, thus rear electrode can be by carrying on the back
The silver-colored main grid in face substitutes, and also just eliminates silk-screen printing rear electrode process.
S4: the silver grating line is sintered.
After silver-colored thin grid line, since the line resistance of silver-colored thin grid line is lower than alum gate line, thus silver-colored thin grid line can reduce
Silver grating line is limited overleaf inside grooves, therefore reduces the blocking to sunray by all-in resistance of the width without increasing the back side,
Improve transfer efficiency.
It can be seen from the above technical proposal that the first is with the two-sided of back side silver grating line provided by the embodiment of the present application
The production method of PERC solar cell, due on P-type substrate production have back aluminium grid line two-sided PERC solar cell it
Afterwards, further include the back aluminium grid line for removing the two-sided PERC solar cell, formed back side groove, the back side groove with institute
It states the adjacent side of P-type substrate and forms Al-BSF；Embedded printing silver grating line, the silver grating line pass through in the back side groove
The Al-BSF is connected to the P-type substrate；The silver grating line is sintered, therefore back side resistance can reduced, is improved
While the fill factor of two-sided PERC battery, reduces the width of back side grid line, reduce the shading-area at the back side.
Second provided by the embodiments of the present application with back side silver grating line two-sided PERC solar cell production method, be
It further include following technology on the basis of the production method of the first above-mentioned two-sided PERC solar cell with back side silver grating line
Feature:
The back aluminium grid line of the removal two-sided PERC solar cell are as follows:
Using the mixed solution of hydrochloric acid and nitric acid to the back aluminium grid line pickling 30 seconds of the two-sided PERC solar cell extremely
90 seconds, remove the back aluminium grid line of the two-sided PERC solar cell.
It should be noted that using this technological parameter, can more thorough removal back aluminium grid line, and will not be to it
He partially damages.
The production method of the third two-sided PERC solar cell with back side silver grating line provided by the embodiments of the present application is
It further include following technology on the basis of the production method of the first above-mentioned two-sided PERC solar cell with back side silver grating line
Feature:
Formation back side groove are as follows:
Formation depth is 5 microns of back side grooves for being 30 microns to 60 microns to 25 microns and width.
It should be noted that the back side groove of this size is mutually arranged in parallel, guarantee the silver grating line produced and aluminium
Back surface field, which combines, has electric property excellent enough.
4th kind provided by the embodiments of the present application with back side silver grating line two-sided PERC solar cell production method, be
It further include following technology on the basis of the production method of the first above-mentioned two-sided PERC solar cell with back side silver grating line
Feature:
The printing silver grating line embedded in the back side groove are as follows:
The silver paste that weight range is 0.9 gram to 1.3 grams is printed in each back side groove, forms the silver-colored grid
Line.
It should be noted that the silver paste of this weight range can guarantee to be enough to fill the completely described back side groove, also can
Enough accomplish to save cost, moreover, the silver paste of printing is the low-temperature sintering slurry of non-penetrative, be printed by exactitude position mode
Into the back side groove.
5th kind provided by the embodiments of the present application with back side silver grating line two-sided PERC solar cell production method, be
It further include following technology on the basis of the production method of the first above-mentioned two-sided PERC solar cell with back side silver grating line
Feature:
It is described that the silver grating line is sintered are as follows:
It is 550 DEG C to 600 DEG C that sintering range, which is arranged, and the sintering time scope for being arranged 500 DEG C or more be 3 seconds extremely
30 seconds, the silver grating line is sintered.
It should be noted that the Al-BSF in back side silver grating line and the back side groove is formed preferably after low-temperature sintering
Ohmic contact, and it is bonded in the back side of two-sided PERC battery securely.
6th kind provided by the embodiments of the present application with back side silver grating line two-sided PERC solar cell production method, be
Any basis in the first above-mentioned production method to the 5th kind of two-sided PERC solar cell with back side silver grating line
On, further include following technical characteristic:
It is described on P-type substrate production have back aluminium grid line two-sided PERC solar cell include:
Alkali making herbs into wool and phosphorus diffusion are carried out on the P-type substrate；
Remove PSG and polished backside；
In the backside deposition aluminum oxide film and silicon nitride film of the P-type substrate；
The aluminum oxide film and the silicon nitride film are partially stripped at the back side of the P-type substrate；
Silk-screen printing rear electrode and back aluminium grid line；
Silk-screen printing front electrode is simultaneously sintered.
In conclusion replacing original alum gate line with silver grating line using the back side, the line resistance of silver grating line is aobvious in above scheme
It writes and is lower than alum gate line, and the Al-BSF Ohmic contact in silver grating line and back side groove is good, this reduces two-sided PERC electricity
The series resistance of two-sided PERC battery can be reduced about 0.2m Ω by the resistance at the pond back side, and the fill factor of battery is also correspondingly
It improves, even higher than common single side PERC battery, transfer efficiency also gets a promotion, and back side silver grating line is embedded in the back side
In groove, width is between 30-60um, and compared to current two-sided PERC battery, the shading-area of the thin grid line in the back side is just reduced
75% or more, therefore more ambient enviroment reflected lights can be absorbed, contribute more output powers.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (6)
1. a kind of production method of the two-sided PERC solar cell with back side silver grating line, comprising:
Production has the two-sided PERC solar cell of back aluminium grid line on P-type substrate；
Remove the back aluminium grid line of the two-sided PERC solar cell, form back side groove, the back side groove with the p-type
The adjacent side of substrate forms Al-BSF；
The embedded printing silver grating line in the back side groove, by silver grating line limitation overleaf inside grooves, the silver grating line by
Silver-colored main grid and the thin grid composition of silver, the silver grating line are connected to the P-type substrate by the Al-BSF；
The silver grating line is sintered.
2. the production method of the two-sided PERC solar cell according to claim 1 with back side silver grating line, feature exist
In the back aluminium grid line of the removal two-sided PERC solar cell are as follows:
Using the mixed solution of hydrochloric acid and nitric acid to the pickling of back aluminium grid line 30 seconds to 90 seconds of the two-sided PERC solar cell,
Remove the back aluminium grid line of the two-sided PERC solar cell.
3. the production method of the two-sided PERC solar cell according to claim 1 with back side silver grating line, feature exist
In formation back side groove are as follows:
Formation depth is 5 microns of back side grooves for being 30 microns to 60 microns to 25 microns and width.
4. the production method of the two-sided PERC solar cell according to claim 1 with back side silver grating line, feature exist
In the printing silver grating line embedded in the back side groove are as follows:
The silver paste that weight range is 0.9 gram to 1.3 grams is printed in each back side groove, forms the silver grating line.
5. the production method of the two-sided PERC solar cell according to claim 1 with back side silver grating line, feature exist
In described to be sintered to the silver grating line are as follows:
It is 550 DEG C to 600 DEG C that sintering range, which is arranged, and the sintering time scope for being arranged 500 DEG C or more is 3 seconds to 30
Second, the silver grating line is sintered.
6. the production method of the two-sided PERC solar cell according to claim 1-5 with back side silver grating line,
It is characterized in that, the two-sided PERC solar cell of the production with back aluminium grid line on P-type substrate includes:
Alkali making herbs into wool and phosphorus diffusion are carried out on the P-type substrate；
Remove PSG and polished backside；
In the backside deposition aluminum oxide film and silicon nitride film of the P-type substrate；
The aluminum oxide film and the silicon nitride film are partially stripped at the back side of the P-type substrate；
Silk-screen printing rear electrode and back aluminium grid line；
Silk-screen printing front electrode is simultaneously sintered.
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| CN112687755B (en) * | 2020-12-28 | 2023-03-28 | 正泰新能科技有限公司 | Back metal electrode of N-type TopCOn solar cell, preparation method and cell |
| CN113140646B (en) * | 2021-04-23 | 2024-05-07 | 南通天盛新能源股份有限公司 | Solar cell P region grid line structure, preparation method thereof and solar cell |
| CN115172533B (en) * | 2022-08-12 | 2024-05-14 | 通威太阳能（安徽）有限公司 | Solar cell processing method |
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| JPS63276278A (en) * | 1987-05-08 | 1988-11-14 | Toa Nenryo Kogyo Kk | Transparent electrode with buried interconnection |
| CN103022262A (en) * | 2013-01-06 | 2013-04-03 | 奥特斯维能源（太仓）有限公司 | Preparation method of back point contact solar cell |
| CN106847946A (en) * | 2017-03-03 | 2017-06-13 | 广东爱康太阳能科技有限公司 | The back electrode structure and battery of p-type PERC double-sided solar batteries |
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| US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
| CN101656273B (en) * | 2008-08-18 | 2011-07-13 | 中芯国际集成电路制造(上海)有限公司 | Selective emitter solar battery unit and manufacturing method thereof |
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| JPS63276278A (en) * | 1987-05-08 | 1988-11-14 | Toa Nenryo Kogyo Kk | Transparent electrode with buried interconnection |
| CN103022262A (en) * | 2013-01-06 | 2013-04-03 | 奥特斯维能源（太仓）有限公司 | Preparation method of back point contact solar cell |
| CN106847946A (en) * | 2017-03-03 | 2017-06-13 | 广东爱康太阳能科技有限公司 | The back electrode structure and battery of p-type PERC double-sided solar batteries |
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