CN106847946A - The back electrode structure and battery of p-type PERC double-sided solar batteries - Google Patents
The back electrode structure and battery of p-type PERC double-sided solar batteries Download PDFInfo
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- CN106847946A CN106847946A CN201710123001.9A CN201710123001A CN106847946A CN 106847946 A CN106847946 A CN 106847946A CN 201710123001 A CN201710123001 A CN 201710123001A CN 106847946 A CN106847946 A CN 106847946A
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 33
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 33
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 33
- 229940037003 alum Drugs 0.000 claims abstract description 109
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 33
- 239000004332 silver Substances 0.000 claims description 33
- 229910052709 silver Inorganic materials 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 238000002161 passivation Methods 0.000 claims description 12
- 230000009466 transformation Effects 0.000 abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 21
- 229910052782 aluminium Inorganic materials 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 230000005684 electric field Effects 0.000 description 11
- 239000004411 aluminium Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 238000007639 printing Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000011267 electrode slurry Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention discloses a kind of back electrode structure, the back electrode structure includes at least one silver-colored main grid of the back of the body and a plurality of alum gate line being parallel to each other, and the alum gate line and the silver-colored main grid of the back of the body are vertically connected；The region for overlapping connection is formed between the alum gate line and the silver-colored main grid of the back of the body, the region of the overlap connection is centered around the surrounding of the silver-colored main grid of the back of the body；Overlapping the region of connection, the silver-colored main grid of the alum gate line covering back of the body.Accordingly, invention additionally discloses a kind of p-type PERC double-sided solar batteries using above-mentioned back electrode structure.Using the present invention, simple structure, cost is relatively low, good conductivity, and the photoelectric transformation efficiency of battery is high.
Description
Technical field
The present invention relates to area of solar cell, more particularly to a kind of back electrode knot of p-type PERC double-sided solar batteries
Structure and the battery using above-mentioned back electrode structure.
Background technology
Solar cell power generation is that solar energy is converted into electric energy using solar cell, because it is green ring
Product is protected, environmental pollution will not be caused, and be renewable resource, so in the case of current energy shortage, solar-electricity
Pond is a kind of novel energy for having a broad based growth future.
The Making programme of p-type PERC double-sided solar batteries includes：Making herbs into wool, diffusion, etching, backside passivation layer deposition,
PECVD back side coating films, front PECVD plated film, silk-screen printing, sintering, annealing.Solar battery sheet is converting light energy into electric energy
During, its internal photo-generated carrier for producing needs to be collected and drawn by the electrode of outside printing, then with external electrical
Road connects, so as to electric current be transported out.Above-mentioned silkscreen process is further subdivided into the back electrode of solar cell
Printing and positive electrode printing.Back electrode printing is divided into silver-colored primary gate electrode printing and aluminium pair gate electrode printing again.Positive electrode slurry and
Back electrode slurry is printed on crystal silicon solar battery front, through oversintering, plays a part of collected current.Backplate figure
Design determines the electric current collection effect and light-receiving area of back of the body passivation cell, so that the photoelectric transformation efficiency of battery is influenceed, therefore
Need to propose a kind of new backplate, the electric conductivity of electrode can be improved, reduce shading-area, improve the opto-electronic conversion of battery
Efficiency.
The content of the invention
The technical problems to be solved by the invention are, there is provided a kind of back electrode knot of p-type PERC double-sided solar batteries
Structure, simple structure, cost is relatively low, good conductivity, and the photoelectric transformation efficiency of battery is high, can meet the need of various different situations
Will.
The technical problems to be solved by the invention are also resided in, there is provided a kind of p-type PERC double-sided solar batteries, electric conductivity
Good, photoelectric transformation efficiency is high, battery photoelectric transformation efficiency is high, the need for can meeting various different situations.
In order to solve the above-mentioned technical problem, the invention provides a kind of back electrode knot of p-type PERC double-sided solar batteries
Structure, the back electrode structure includes the silver-colored main grid of at least one back of the body, a plurality of alum gate line and alum gate housing being parallel to each other, the alum gate
Line and the silver-colored main grid of the back of the body vertically connect, and a plurality of alum gate line is formed around the alum gate housing；
The two ends of the silver-colored main grid of the back of the body are end, and the back of the body silver main grid is connected by end with alum gate housing, the width of the end
Width of the degree more than or less than the silver-colored main grid of the back of the body；
The region for overlapping connection is formed between the alum gate line and the silver-colored main grid of the back of the body, the region of the overlap connection is centered around the back of the body
The surrounding of silver-colored main grid, is overlapping the region of connection, the silver-colored main grid of the alum gate line covering back of the body.
As the preferred embodiment of such scheme, the width of the width less than the silver-colored main grid of the back of the body of the end.
As the preferred embodiment of such scheme, the two ends of the back of the body silver main grid are triangle, bilinear shape, single linear,
Trapezoidal or ellipse.
Used as the preferred embodiment of such scheme, the back electrode structure includes at least two silver-colored main grids of the back of the body, and the back of the body silver is main
It is parallel to each other between grid.
Used as the preferred embodiment of such scheme, the quantity of the back of the body silver main grid is 2-8 roots, and the width of the back of the body silver main grid is
0.5-5mm；
The quantity of the alum gate line is 20-300 roots, and the width of the alum gate line is 30-500 microns；
The silver-colored main grid of the back of the body and the width of alum gate line overlap join domain are 0.05-5mm.
Accordingly, the present invention also provides a kind of p-type PERC double-sided solar batteries, including the silver-colored main grid of the back of the body, alum gate line, the back side
Passivation layer, P-type silicon, N-type emitter stage, front passivation layer and positive silver electrode, the backside passivation layer after lbg by forming
The lbg area that several be arranged in parallel, sets at least 1 group lbg unit in each lbg area；Alum gate line with swash
Light slotted zones correspond and set, and the alum gate line is connected by lbg area with P-type silicon, the alum gate line and carry on the back silver main grid
Vertical connection；
The alum gate line can also be shaped form, arc, waveform etc..
The a plurality of alum gate line is formed around the alum gate housing, and the two ends of the back of the body silver main grid are end, the back of the body
Silver-colored main grid is connected by end with alum gate housing, the width of the width more than or less than the silver-colored main grid of the back of the body of the end；
The region for overlapping connection is formed between the alum gate line and the silver-colored main grid of the back of the body, the region of the overlap connection is centered around the back of the body
The surrounding of silver-colored main grid, is overlapping the region of connection, the silver-colored main grid of the alum gate line covering back of the body.
As the preferred embodiment of such scheme, the width of the width less than the silver-colored main grid of the back of the body of the end；
The two ends of the silver-colored main grid of the back of the body are triangle, bilinear shape, single linear, trapezoidal or ellipse.
Used as the preferred embodiment of such scheme, the quantity of the back of the body silver main grid is 2-8 roots, and the width of the back of the body silver main grid is
0.5-5mm；
The quantity of the alum gate line is 20-300 roots, and the width of the alum gate line is 30-500 microns；
The silver-colored main grid of the back of the body and the width of alum gate line overlap join domain are 0.05-5mm.
Used as the preferred embodiment of such scheme, the alum gate line is parallel with lbg area,
In each lbg area set at least 2 groups lbg units, the lbg unit that two adjacent groups be arranged in parallel it
Between spacing be 5-300 μm；
The width in the lbg area is 10-500 μm；The width of the alum gate line below lbg area is opened more than laser
The width in groove area, the width of alum gate line is 30-550 μm.
Used as the preferred embodiment of such scheme, the alum gate line is vertical with lbg area,
Spacing between the lbg unit is 0.5-50mm.
Implement the present invention, have the advantages that：
The present invention provides a kind of back electrode structure of p-type PERC double-sided solar batteries, can both substitute existing one side solar energy
The effect of full aluminum back electric field, the also function with current－carrying conductor in battery structure, it is adaptable to be installed in p-type PERC double-sided solars
The back side of battery is used as backplate.Specifically, back electrode structure includes at least one silver-colored main grid of the back of the body and a plurality of is parallel to each other
Alum gate line, alum gate line and the silver-colored main grid of the back of the body are vertically connected；The region for overlapping connection is formed between alum gate line and the silver-colored main grid of the back of the body, the company of overlap
The region for connecing is centered around the surrounding of the silver-colored main grid of the back of the body, it is ensured that form good contact between alum gate line and the silver-colored main grid of the back of the body, it is ensured that
The electric current collection effect of back electrode, so as to ensure the photoelectric transformation efficiency of solar cell.Overlapping the region of connection, alum gate line
The silver-colored main grid of the covering back of the body, can improve the conductance of back electrode structure, the electric current collection effect of back electrode be improved, so as to ensure the sun
The photoelectric transformation efficiency of energy battery.
The two ends of the silver-colored main grid of the back of the body are end, and the silver-colored main grid of the back of the body is connected by end with alum gate housing, and the width of end is big
In or less than the silver-colored main grid of the back of the body width, specifically, the end could be arranged to various shapes, such as triangle, bilinear
Shape, single linear, trapezoidal or ellipse, can save silver paste, change the situation of the collected current of the silver-colored main grid of the back of the body, meet different
The need for the solar cell of occasion, flexibility is big.
The present invention also provides a kind of p-type PERC double-sided solar batteries using above-mentioned back electrode structure, and it is carried on the back in battery
Face is provided with a plurality of alum gate line be arrangeding in parallel, not only substitutes full aluminum back electric field in existing one side solar cell, realizes that the back side is inhaled
The function of light, also serving as the secondary grid structure in back of the body silver electrode is used to conduct electronics.Make p-type PERCP types PERC of the present invention
Double-sided solar battery, can save the consumption of silver paste and aluminium paste, reduce production cost, and realize two-sided absorption luminous energy, significantly
Expand the range of application of solar cell and improve photoelectric transformation efficiency.
Brief description of the drawings
Fig. 1 is the structural representation of the back electrode structure first embodiment of p-type PERC double-sided solar batteries；
Fig. 2 be A-A shown in Fig. 1 to profile；
Fig. 3 is the structural representation of the back electrode structure second embodiment of p-type PERC double-sided solar batteries；
Fig. 4 is the structural representation of the back electrode structure 3rd embodiment of p-type PERC double-sided solar batteries；
Fig. 5 is the structural representation of the back electrode structure fourth embodiment of p-type PERC double-sided solar batteries；
Fig. 6 is the profile of p-type PERC double-sided solar batteries；
Fig. 7 is the structure schematic diagram of p-type PERC double-sided solar batteries.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with accompanying drawing
Step ground is described in detail.
In recent years, with the further investigation of scientist and technical staff, it was found that a kind of PERC solar energy of passivating back
Battery can further improve the photoelectric transformation efficiency of battery.But the pellumina at the back side and silicon nitride film are insulating barrier, it is impossible to
Conduction electronics, therefore the way of routine is slotted on silicon nitride below grid line, during printing grid line, silver paste can be filled into fluting
Ohmic contact is formed with P-type silicon in area, so as to realize conducting function.
Existing PERC one sides solar cell is provided with the whole back of the body that full aluminum back electric field is covered in silicon chip at the back side of battery
Face, the effect of full aluminum back electric field is to improve open-circuit voltage Voc and short circuit current Jsc, forces minority carrier away from surface, few
Number Carrier recombination rate reduction, so as to improve battery efficiency on the whole.However, because full aluminum back electric field is light tight, therefore, have
The rear surface of solar cell of full aluminum back electric field cannot absorb luminous energy, can only front absorb luminous energy, its photoelectric transformation efficiency is difficult to greatly
The raising of amplitude.
Therefore, the present invention proposes a kind of new backplate, can both substitute complete in existing one side solar battery structure
The effect of aluminum back electric field, the also function with current－carrying conductor, it is adaptable to make at the back side for being installed in p-type PERC double-sided solar batteries
It is backplate.
As shown in Figure 1, 2, first the invention provides a kind of back electrode structure of p-type PERC double-sided solar batteries is real
Example is applied, the back electrode structure includes the silver-colored main grid 1 of at least one back of the body, a plurality of alum gate line 2 and alum gate housing 20 being parallel to each other, institute
State alum gate line 2 and the silver-colored main grid 1 of the back of the body is vertically connected, a plurality of alum gate line 2 is formed around alum gate housing 20, the silver-colored main grid of the back of the body
1 two ends are end 21, and the silver-colored main grid 1 of the back of the body is connected by end 21 with alum gate housing 20, and the width of the end 21 is more than
Or less than the width of the silver-colored main grid 1 of the back of the body.
The region 12 for overlapping connection is formed between the alum gate line 2 and the silver-colored main grid 1 of the back of the body.Specifically join in the region 12 for overlapping connection
Dotted line frame as shown in Figure 1, its surrounding for being centered around the silver-colored main grid 1 of the back of the body, it is ensured that form good between alum gate line and the silver-colored main grid of the back of the body
Good contact, it is ensured that the electric current collection effect of back electrode, so as to ensure the photoelectric transformation efficiency of solar cell.The He of alum gate line 2
Silicon chip is formed multiple sensitive areas 10 by the silver-colored main grid 1 of the back of the body, so as to the back side for realizing solar cell absorbs solar energy.
The region 12 of connection is being overlapped, the silver-colored main grid 1 of the covering of alum gate line 2 back of the body can improve the conduction of back electrode structure
Rate, improves the electric current collection effect of back electrode, so as to ensure the photoelectric transformation efficiency of solar cell.
The width of the silver-colored join domain 12 Chong Die with alum gate line 2 of main grid 1 of the back of the body is 0.1-2mm, can be specifically 0.1 mm,
0.5 mm, 1.0 mm, 1.5 mm, 2.0mm, but not limited to this.The width for overlapping join domain 12 is 0.1-2mm, does not influence envelope
The welding of silver-colored main grid 1 and welding is carried on the back during arrangement.
Preferably, the back electrode structure includes at least two silver-colored main grids 1 of the back of the body, is parallel to each other between the silver-colored main grid 1 of the back of the body.
The quantity of the silver-colored main grid 1 of the back of the body is 2-8 roots, and the width of the back of the body silver main grid 1 is 0.5-5mm.
The quantity of the alum gate line is 20-300 roots, and the width of the alum gate line is 30-500 microns.
Preferably, width of the width of the end 21 less than the silver-colored main grid 1 of the back of the body.The two ends of the silver-colored main grid of the back of the body can be with
It is various shapes, such as triangle, bilinear shape, single linear, trapezoidal or ellipse, but not limited to this, silver paste can be saved
Material, changes the situation of the collected current of the silver-colored main grid of the back of the body, and the need for meeting the solar cell of different occasions, flexibility is big.Need
Illustrate, in Fig. 1, the first embodiment of back electrode structure shown in 2, the two ends end 21 of the shown silver-colored main grid of the back of the body is shaped as
Triangle.
Show such as Fig. 3, the invention provides the second embodiment of back electrode structure, its from unlike first embodiment, institute
That shows the two ends end 21 for carrying on the back silver-colored main grid is shaped as bilinear shape.
Show such as Fig. 4, the invention provides the 3rd embodiment of back electrode structure, its from unlike first embodiment, institute
That shows the two ends end 21 for carrying on the back silver-colored main grid is shaped as single linear.
Show such as Fig. 5, the invention provides the fourth embodiment of back electrode structure, its from unlike first embodiment, institute
That shows the two ends end 21 for carrying on the back silver-colored main grid is shaped as bilinear shape, the combination of single linear.
Accordingly, the present invention also provides a kind of p-type PERC double-sided solar batteries using above-mentioned back electrode structure, tool
Body is as shown in fig. 6, including the silver-colored main grid 1 of the back of the body, alum gate line 2, backside passivation layer, P-type silicon 5, N-type emitter stage 6, the and of front passivation layer 7
Positive silver electrode 8, wherein, the backside passivation layer includes back side silicon nitride 3, backside oxide aluminium film 4, and front passivation layer 7 can be with
It is front side silicon nitride film, but not limited to this.
The back side silicon nitride 3 and backside oxide aluminium film 4 are by forming what 30-500 groups be arranged in parallel after lbg
Lbg area 9, sets 1-50 group lbg units in each lbg area；A pair of alum gate line 2 and lbg area 9 one
Should set, the alum gate line 2 is connected by lbg area 9 with P-type silicon 5；Main grid 1 is vertical is connected with back of the body silver for the alum gate line 2.
The present invention is improved to existing one side PERC solar cells, is no longer provided with full aluminum back electric field, but by its
Become many alum gate lines 2, opened using laser is opened up in lbg technology overleaf silicon nitride film 3 and backside oxide aluminium film 4
Groove area 9, and alum gate line 2 is printed in the lbg area 9 that these be arranged in parallel, so as to form localized contact with P-type silicon 5,
The alum gate line 2 of intensive parallel arrangement can not only play raising open-circuit voltage Voc and short circuit current Jsc, reduce minority carrier and answer
Conjunction rate, improves the effect of cell photoelectric conversion efficiency, the full aluminum back electric field of alternative existing one side battery structure, and alum gate line
2 back sides for not covering silicon chip comprehensively, sunshine can be projected in silicon chip between alum gate line 2, so as to realize that silicon chip back side is inhaled
Luminous energy is received, the photoelectric transformation efficiency of battery is greatly improved.
Preferably, the radical of the alum gate line 2 is corresponding with the number in lbg area, is all 30-500 bars, more preferably, institute
The radical for stating alum gate line 2 is 80-220 bars.
It is illustrated in figure 7 silicon chip back side, alum gate line 2 and the back of the body perpendicular connection of silver-colored main grid 1.Alum gate line 2 and the silver-colored main grid 1 of the back of the body
Designing points are identical with the back electrode structure shown in Fig. 1-5, will not be repeated here.It is continuous straight grid wherein to carry on the back silver-colored main grid 1, due to
Back side silicon nitride 3 and backside oxide aluminium film 4 are provided with lbg area 9, when printing aluminium paste forms alum gate line 2, aluminium paste fill to
Lbg area 9 so that alum gate line 2 forms localized contact with P-type silicon 5, can be by electric transmission to alum gate line 2, with the phase of alum gate line 2
The silver-colored main grid 1 of the back of the body of friendship then collects the electronics on alum gate line 2, it follows that alum gate line 2 of the present invention plays raising open-circuit voltage
The effect of Voc and short circuit current Jsc, reduction minority carrier recombination rate, and transmission electronics, alternative existing one side solar energy
Full aluminum back electric field in battery, not only reduces the consumption of silver paste and aluminium paste, reduces production cost, and realizes two-sided absorption luminous energy,
It is significantly expanded the range of application of solar cell and improves photoelectric transformation efficiency.
It should be noted that the silicon chip back side shown in Fig. 7 uses the first implementation of Fig. 1, back electrode structure shown in 2
Example, certainly, it can also be using second embodiment, the 3rd embodiment shown in Fig. 4 shown in Fig. 3, the 4th implementation shown in Fig. 5
The back electrode structure of example, embodiments thereof is not limited to illustrated embodiment of the present invention.
The alum gate line can be parallel, or vertical with lbg area.
When alum gate line is parallel with lbg area, more than 2 groups lbg units, adjacent two are set in lbg area
Spacing between the lbg unit that group be arranged in parallel is 5-300 μm.
The width in lbg area 9 of the present invention is 10-500 μm；Positioned at the alum gate line 2 of lbg area 9 lower section
More than the width in lbg area 9, the width of alum gate line 2 is 30-550 μm to width.Plurality is selected in the above-mentioned width of alum gate line 2
Value is such as 500 μm, and side by side can be located in multigroup lbg area 9 same by the selection of the width of lbg area 9 compared with such as 40 μm of fractional value
On alum gate line 2, it is ensured that alum gate line 2 has enough contacts area with P-type silicon 5.
When alum gate line is vertical with lbg area, the spacing between the lbg unit is 0.5-50mm.
Further, every group of lbg unit includes at least one lbg unit, the pattern of the lbg unit
It is lines, circle, ellipse, triangle, quadrangle, pentagon, hexagon, cross or star.Preferably, the laser is opened
The pattern of groove unit is the dotted line of a continuous straight line or multiple line segment compositions；When the pattern of the lbg unit is many
During the dotted line of individual line segment composition, the length of the line segment is identical or different.Alum gate line 2 can be linear, shaped form, wave
Shape, zigzag, but not limited to this.Every group of arrangement mode of lbg unit can also be linear, shaped form, waveform,
Zigzag, but not limited to this.The shape of alum gate line is identical with the arrangement mode of every group of lbg unit.
Therefore, p-type PERC double-sided solar batteries change of the present invention is provided with a plurality of alum gate line 2 be arrangeding in parallel, no
Full aluminum back electric field in existing one side solar cell is only substituted to improve the photoelectric transformation efficiency of battery, also in substitution back of the body silver electrode
Secondary grid structure be used as conduction electronics.P-type PERCP types PERC double-sided solar batteries of the present invention are made, silver paste can be saved
With the consumption of aluminium paste, reduce production cost, and realize two-sided absorption luminous energy, be significantly expanded solar cell range of application and
Improve photoelectric transformation efficiency.
It is last to should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than the present invention is protected
The limitation of scope is protected, although being explained in detail to the present invention with reference to preferred embodiment, one of ordinary skill in the art should
Understand, technical scheme can be modified or equivalent, without deviating from the essence of technical solution of the present invention
And scope.
Claims (10)
1. a kind of back electrode structure of p-type PERC double-sided solar batteries, it is characterised in that the back electrode structure is included at least
The one silver-colored main grid of the back of the body, a plurality of alum gate line and alum gate housing being parallel to each other, the alum gate line and the silver-colored main grid of the back of the body are vertically connected, described
A plurality of alum gate line is formed around the alum gate housing；
The two ends of the silver-colored main grid of the back of the body are end, and the back of the body silver main grid is connected by end with alum gate housing, the width of the end
Width of the degree more than or less than the silver-colored main grid of the back of the body；
The region for overlapping connection is formed between the alum gate line and the silver-colored main grid of the back of the body, the region of the overlap connection is centered around the back of the body
The surrounding of silver-colored main grid, is overlapping the region of connection, the silver-colored main grid of the alum gate line covering back of the body.
2. back electrode structure as claimed in claim 1, it is characterised in that width of the width of the end less than the silver-colored main grid of the back of the body
Degree.
3. back electrode structure as claimed in claim 1 or 2, it is characterised in that the two ends of the back of the body silver main grid are triangle, double straight
Linear, single linear, trapezoidal or ellipse.
4. back electrode structure as claimed in claim 1, it is characterised in that the back electrode structure includes that at least two back of the body silver are main
Grid, are parallel to each other between the back of the body silver main grid.
5. back electrode structure as claimed in claim 4, it is characterised in that the quantity of the back of the body silver main grid is 2-8 roots, the back of the body silver
The width of main grid is 0.5-5mm；
The quantity of the alum gate line is 20-300 roots, and the width of the alum gate line is 30-500 microns；
The silver-colored main grid of the back of the body and the width of alum gate line overlap join domain are 0.05-5mm.
6. a kind of p-type PERC double-sided solar batteries, it is characterised in that including the silver-colored main grid of the back of the body, alum gate line, backside passivation layer, p-type
Silicon, N-type emitter stage, front passivation layer and positive silver electrode, the backside passivation layer are parallel by forming several after lbg
The lbg area of setting, sets at least 1 group lbg unit in each lbg area；Alum gate line and lbg area one
One is correspondingly arranged, and the alum gate line is connected by lbg area with P-type silicon, and main grid is vertical is connected with back of the body silver for the alum gate line；
The a plurality of alum gate line is formed around the alum gate housing, and the two ends of the back of the body silver main grid are end, the back of the body silver is main
Grid are connected by end with alum gate housing, the width of the width more than or less than the silver-colored main grid of the back of the body of the end；
The region for overlapping connection is formed between the alum gate line and the silver-colored main grid of the back of the body, the region of the overlap connection is centered around the back of the body
The surrounding of silver-colored main grid, is overlapping the region of connection, the silver-colored main grid of the alum gate line covering back of the body.
7. p-type PERC double-sided solar batteries as claimed in claim 6, it is characterised in that the width of the end is less than described
The width of the silver-colored main grid of the back of the body；
The two ends of the silver-colored main grid of the back of the body are triangle, bilinear shape, single linear, trapezoidal or ellipse.
8. p-type PERC double-sided solar batteries as claimed in claim 6, it is characterised in that the quantity of the back of the body silver main grid is 2-8
Root, the width of the back of the body silver main grid is 0.5-5mm；
The quantity of the alum gate line is 20-300 roots, and the width of the alum gate line is 30-500 microns；
The silver-colored main grid of the back of the body and the width of alum gate line overlap join domain are 0.05-5mm.
9. p-type PERC double-sided solar batteries as claimed in claim 6, it is characterised in that the alum gate line and lbg area
It is parallel,
In each lbg area set at least 2 groups lbg units, the lbg unit that two adjacent groups be arranged in parallel it
Between spacing be 5-300 μm；
The width in the lbg area is 10-500 μm；The width of the alum gate line below lbg area is opened more than laser
The width in groove area, the width of alum gate line is 30-550 μm.
10. p-type PERC double-sided solar batteries as claimed in claim 9, it is characterised in that the alum gate line and lbg area
Vertically,
Spacing between the lbg unit is 0.5-50mm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107331735A (en) * | 2017-08-29 | 2017-11-07 | 浙江晶科能源有限公司 | A kind of preparation method of the two-sided PERC solar cells with back side silver grating line |
| CN113594283A (en) * | 2021-09-28 | 2021-11-02 | 中国华能集团清洁能源技术研究院有限公司 | Full-string parallel tile-stacked photovoltaic module |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820343A (en) * | 2012-08-16 | 2012-12-12 | 常州天合光能有限公司 | Solar cell with no-emitter region and preparation method of solar cell |
| CN103943695A (en) * | 2013-01-21 | 2014-07-23 | 联景光电股份有限公司 | Electrode structure of solar cell |
| WO2015083148A1 (en) * | 2013-12-04 | 2015-06-11 | Utilight Ltd. | Solar cell bus bars |
| CN106252443A (en) * | 2015-06-09 | 2016-12-21 | 太阳世界创新有限公司 | Solar battery array |
| CN106449876A (en) * | 2016-10-17 | 2017-02-22 | 无锡尚德太阳能电力有限公司 | Producing method of selective emitter double-faced PERC crystalline silicon solar cell |
| CN106449877A (en) * | 2016-10-17 | 2017-02-22 | 浙江晶科能源有限公司 | PERC preparation method |
-
2017
- 2017-03-03 CN CN201710123001.9A patent/CN106847946A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820343A (en) * | 2012-08-16 | 2012-12-12 | 常州天合光能有限公司 | Solar cell with no-emitter region and preparation method of solar cell |
| CN103943695A (en) * | 2013-01-21 | 2014-07-23 | 联景光电股份有限公司 | Electrode structure of solar cell |
| WO2015083148A1 (en) * | 2013-12-04 | 2015-06-11 | Utilight Ltd. | Solar cell bus bars |
| CN106252443A (en) * | 2015-06-09 | 2016-12-21 | 太阳世界创新有限公司 | Solar battery array |
| CN106449876A (en) * | 2016-10-17 | 2017-02-22 | 无锡尚德太阳能电力有限公司 | Producing method of selective emitter double-faced PERC crystalline silicon solar cell |
| CN106449877A (en) * | 2016-10-17 | 2017-02-22 | 浙江晶科能源有限公司 | PERC preparation method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107331735A (en) * | 2017-08-29 | 2017-11-07 | 浙江晶科能源有限公司 | A kind of preparation method of the two-sided PERC solar cells with back side silver grating line |
| CN107331735B (en) * | 2017-08-29 | 2018-12-28 | 浙江晶科能源有限公司 | A kind of production method of the two-sided PERC solar cell with back side silver grating line |
| CN113594283A (en) * | 2021-09-28 | 2021-11-02 | 中国华能集团清洁能源技术研究院有限公司 | Full-string parallel tile-stacked photovoltaic module |
| CN113594283B (en) * | 2021-09-28 | 2022-06-24 | 中国华能集团清洁能源技术研究院有限公司 | Full-series-parallel tile-stacked photovoltaic module |
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Application publication date: 20170613 |