CN106981524A - The back electrode structure and battery of p-type PERC double-sided solar batteries - Google Patents
The back electrode structure and battery of p-type PERC double-sided solar batteries Download PDFInfo
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- CN106981524A CN106981524A CN201710123174.0A CN201710123174A CN106981524A CN 106981524 A CN106981524 A CN 106981524A CN 201710123174 A CN201710123174 A CN 201710123174A CN 106981524 A CN106981524 A CN 106981524A
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 33
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 33
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 33
- 229940037003 alum Drugs 0.000 claims abstract description 111
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000004332 silver Substances 0.000 claims abstract description 53
- 229910052709 silver Inorganic materials 0.000 claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 238000002161 passivation Methods 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 5
- 230000009466 transformation Effects 0.000 abstract description 14
- 238000010276 construction Methods 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 21
- 229910052782 aluminium Inorganic materials 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 230000005684 electric field Effects 0.000 description 11
- 239000004411 aluminium Substances 0.000 description 10
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- 238000007639 printing Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
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- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- 235000003283 Pachira macrocarpa Nutrition 0.000 description 1
- 241001083492 Trapa Species 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The invention discloses a kind of back electrode structure, the back electrode structure includes the silver-colored main grid of at least one back of the body, a plurality of alum gate line and alum gate housing being parallel to each other；The region of overlapping connection is formed between the alum gate line and the silver-colored main grid of the back of the body, the region of the overlapping connection is centered around the surrounding of the silver-colored main grid of the back of the body, in the region of overlapping connection, the silver-colored main grid of the alum gate line covering back of the body；The silver-colored main grid of the back of the body includes at least two back of the body silver main grids, disconnect interval is formed between each two back of the body silver main grid, the disconnect interval is connected with each other provided with least 1 connecting line, the back of the body silver main grid by connecting line, and the back of the body silver main grid is connected by connecting line with alum gate housing；Or, the silver-colored main grid of the back of the body is provided with least one hollow-out parts.Accordingly, invention additionally discloses a kind of p-type PERC double-sided solar batteries using above-mentioned back electrode structure.Simple in construction using the present invention, cost is relatively low, good conductivity, and the photoelectric transformation efficiency of battery is high.
Description
Technical field
The present invention relates to area of solar cell, more particularly to a kind of back electrode knot of p-type PERC double-sided solar batteries
Structure and the battery using above-mentioned back electrode structure.
Background technology
Solar cell power generation is that solar energy is converted into electric energy using solar cell, because it is green ring
Product is protected, environmental pollution will not be caused, and is renewable resource, so in the case of current energy shortage, solar-electricity
Pond is a kind of novel energy for having a broad based growth future.
The Making programme of p-type PERC double-sided solar batteries includes：Making herbs into wool, diffusion, etching, backside passivation layer deposition,
PECVD back side coating films, front PECVD plated films, silk-screen printing, sintering, annealing.Solar battery sheet is converting light energy into electric energy
During, its internal photo-generated carrier produced needs the electrode by outside printing to collect and draw, then with external electrical
Road is connected, so that electric current be transported out.Above-mentioned silkscreen process is further subdivided into the back electrode of solar cell
Printing and positive electrode printing.Back electrode printing is divided into silver-colored primary gate electrode printing and the secondary gate electrode printing of aluminium again.Positive electrode slurry and
Back electrode slurry is printed on crystal silicon solar battery front, through oversintering, plays a part of collected current.Backplate figure
Design determines the electric current collection effect and light-receiving area of back of the body passivation cell, so as to influence the photoelectric transformation efficiency of battery, therefore
Need to propose a kind of new backplate, the electric conductivity of electrode can be improved, reduce shading-area, improve the opto-electronic conversion of battery
Efficiency.
The content of the invention
The technical problems to be solved by the invention are that there is provided a kind of back electrode knot of p-type PERC double-sided solar batteries
Structure, simple in construction, cost is relatively low, good conductivity, and the photoelectric transformation efficiency of battery is high, can meet the need of a variety of different situations
Will.
The technical problems to be solved by the invention also reside in that there is provided a kind of p-type PERC double-sided solar batteries, electric conductivity
Good, photoelectric transformation efficiency is high, the photoelectric transformation efficiency of battery is high, the need for can meeting a variety of different situations.
In order to solve the above-mentioned technical problem, the invention provides a kind of back electrode knot of p-type PERC double-sided solar batteries
Structure, the back electrode structure includes the silver-colored main grid of at least one back of the body, a plurality of alum gate line and alum gate housing being parallel to each other, the alum gate
Line and the silver-colored main grid of the back of the body vertically connect, and a plurality of alum gate line is surrounded by the alum gate housing；
The region of overlapping connection is formed between the alum gate line and the silver-colored main grid of the back of the body, the region of the overlapping connection is centered around the back of the body
The surrounding of silver-colored main grid, in the region of overlapping connection, the silver-colored main grid of the alum gate line covering back of the body；
The silver-colored main grid of the back of the body includes forming disconnect interval between at least two back of the body silver main grids, each two back of the body silver main grid, described
Disconnect interval is connected with each other provided with least 1 connecting line, the back of the body silver main grid by connecting line, and the back of the body silver main grid passes through
Connecting line is connected with alum gate housing；Or, the silver-colored main grid of the back of the body is provided with least one hollow-out parts.
As the preferred embodiment of such scheme, the disconnect interval is provided with 1-5 bar connecting lines.
As the preferred embodiment of such scheme, the hollow-out parts are shaped as rectangle, square, circle, ellipse, water chestnut
Shape or arc and rectangular composite figure.
As the preferred embodiment of such scheme, the silver-colored main grid of the back of the body is provided with 1-15 hollow-out parts；
Or form 1-15 disconnect interval between back of the body silver main grid.
As the preferred embodiment of such scheme, the quantity of the silver-colored main grid of the back of the body is 2-8 roots, and the width of the silver-colored main grid of the back of the body is
0.5-5mm；
The quantity of the alum gate line is 20-300 roots, and the width of the alum gate line is 30-500 microns；
The width of the silver-colored main grid of the back of the body and alum gate line overlap join domain is 0.05-5mm.
Accordingly, the present invention also provides a kind of p-type PERC double-sided solar batteries, including the silver-colored main grid of the back of the body, alum gate line, the back side
Passivation layer, P-type silicon, N-type emitter stage, front passivation layer and positive silver electrode, the backside passivation layer are formed after lbg
At least 1 group lbg unit is set in several lbg areas be arrangeding in parallel, each lbg area；Alum gate line is with swashing
Light slotted zones, which are corresponded, to be set, and the alum gate line is connected by lbg area with P-type silicon, the alum gate line and the silver-colored main grid of the back of the body
Vertical connection, a plurality of alum gate line is surrounded by the alum gate housing；
The region of overlapping connection is formed between the alum gate line and the silver-colored main grid of the back of the body, the region of the overlapping connection is centered around the back of the body
The surrounding of silver-colored main grid, in the region of overlapping connection, the silver-colored main grid of the alum gate line covering back of the body；
The silver-colored main grid of the back of the body includes forming disconnect interval between at least two back of the body silver main grids, each two back of the body silver main grid, described
Disconnect interval is connected with each other provided with least 1 connecting line, the back of the body silver main grid by connecting line, and the back of the body silver main grid passes through
Connecting line is connected with alum gate housing；Or, the silver-colored main grid of the back of the body is provided with least one hollow-out parts.
As the preferred embodiment of such scheme, the silver-colored main grid of the back of the body is provided with 1-15 hollow-out parts, the shape of the hollow-out parts
Shape is rectangle, square, circle, ellipse, rhombus or arc and rectangular composite figure；
Or, 1-15 disconnect interval is formed between back of the body silver main grid, the disconnect interval is provided with 1-5 bar connecting lines.
As the preferred embodiment of such scheme, the quantity of the silver-colored main grid of the back of the body is 2-8 roots, and the width of the silver-colored main grid of the back of the body is
0.5-5mm；
The quantity of the alum gate line is 20-300 roots, and the width of the alum gate line is 30-500 microns；
The width of the silver-colored main grid of the back of the body and alum gate line overlap join domain is 0.05-5mm.
As the preferred embodiment of such scheme, the alum gate line is parallel with lbg area,
At least 2 groups lbg units of setting in each lbg area, the lbg unit that two adjacent groups be arranged in parallel it
Between spacing be 5-300 μm；
The width in the lbg area is 10-500 μm；The width of alum gate line below lbg area is opened more than laser
The width in groove area, the width of alum gate line is 30-550 μm.
As the preferred embodiment of such scheme, the alum gate line is vertical with lbg area,
Spacing between the lbg unit is 0.5-50mm.
Implement the present invention, have the advantages that：
The present invention provides a kind of back electrode structure of p-type PERC double-sided solar batteries, can both substitute existing one side solar energy
The effect of full aluminum back electric field, the also function with current－carrying conductor in battery structure, it is adaptable to be installed in p-type PERC double-sided solars
The back side of battery is used as backplate.Specifically, back electrode structure includes at least one silver-colored main grid of the back of the body and a plurality of is parallel to each other
Alum gate line, alum gate line and the silver-colored main grid of the back of the body are vertically connected；The region of overlapping connection, overlapping company are formed between alum gate line and the silver-colored main grid of the back of the body
The region connect is centered around the surrounding of the silver-colored main grid of the back of the body, it is ensured that form good contact between alum gate line and the silver-colored main grid of the back of the body, it is ensured that
The electric current collection effect of back electrode, so as to ensure the photoelectric transformation efficiency of solar cell.In the region of overlapping connection, alum gate line
The silver-colored main grid of the covering back of the body, can improve the conductance of back electrode structure, the electric current collection effect of back electrode be improved, so as to ensure the sun
The photoelectric transformation efficiency of energy battery.
The present invention is using segmentation main grid, that is, carrying on the back silver-colored main grid includes at least two back of the body silver main grids, each two back of the body silver main grid
Between form disconnect interval, disconnect interval is connected with each other provided with least 1 connecting line, the back of the body silver main grid by connecting line,
The back of the body silver main grid is connected by connecting line with alum gate housing；Or, the silver-colored main grid of the back of the body is provided with least one hollow-out parts, significantly
Silver paste consumption is saved, battery manufacture cost is reduced.
The present invention also provides a kind of p-type PERC double-sided solar batteries using above-mentioned back electrode structure, and it is carried on the back in battery
Face is provided with a plurality of alum gate line be arrangeding in parallel, not only substitutes full aluminum back electric field in existing one side solar cell, realizes that the back side is inhaled
The function of light, also serving as the secondary grid structure in back of the body silver electrode is used to conduct electronics.Make p-type PERCP types PERC of the present invention
Double-sided solar battery, can save the consumption of silver paste and aluminium paste, reduce production cost, and realize two-sided absorption luminous energy, significantly
Expand the application of solar cell and improve photoelectric transformation efficiency.
Brief description of the drawings
Fig. 1 is the structural representation of the back electrode structure first embodiment of p-type PERC double-sided solar batteries；
Fig. 2 be A-A shown in Fig. 1 to profile；
Fig. 3 is the structural representation of the back electrode structure second embodiment of p-type PERC double-sided solar batteries；
Fig. 4 is the structural representation of the back electrode structure 3rd embodiment of p-type PERC double-sided solar batteries；
Fig. 5 is the structural representation of the back electrode structure fourth embodiment of p-type PERC double-sided solar batteries；
Fig. 6 is the profile of p-type PERC double-sided solar batteries；
Fig. 7 is the structure schematic diagram of p-type PERC double-sided solar batteries.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with accompanying drawing
It is described in detail on step ground.
In recent years, with the further investigation of scientist and technical staff, it was found that a kind of PERC solar energy of passivating back
Battery can further improve the photoelectric transformation efficiency of battery.But the pellumina at the back side and silicon nitride film are insulating barrier, it is impossible to
Electronics is conducted, therefore conventional way is slotted on the silicon nitride below grid line, during printing grid line, silver paste can be filled into fluting
With P-type silicon formation Ohmic contact in area, so as to realize conducting function.
Existing PERC one sides solar cell is covered in the whole back of the body of silicon chip provided with full aluminum back electric field at the back side of battery
Face, the effect of full aluminum back electric field is to improve open-circuit voltage Voc and short circuit current flow Jsc, forces minority carrier away from surface, few
Number Carrier recombination rate reduction, so as to improve battery efficiency on the whole.However, because full aluminum back electric field is light tight, therefore, having
The rear surface of solar cell of full aluminum back electric field can not absorb luminous energy, positive can only absorb luminous energy, its photoelectric transformation efficiency is difficult to greatly
The raising of amplitude.
Therefore, the present invention proposes a kind of new backplate, it can both substitute complete in existing one side solar battery structure
The effect of aluminum back electric field, the also function with current－carrying conductor, it is adaptable to make at the back side for being installed in p-type PERC double-sided solar batteries
For backplate.
With reference to Fig. 1-5, the invention provides a kind of a variety of implementations of the back electrode structure of p-type PERC double-sided solar batteries
Example, the back electrode structure includes the silver-colored main grid 1 of at least one back of the body, a plurality of alum gate line 2 and alum gate housing 20 being parallel to each other, described
Alum gate line 2 and the silver-colored main grid 1 of the back of the body are vertically connected, and a plurality of alum gate line 2 is surrounded by alum gate housing 20, the silver-colored main grid 1 of the back of the body
Including at least two back of the body silver main grids 11, disconnect interval 110 is formed between each two back of the body silver main grid 11；Or, the back of the body silver
Main grid 1 is provided with least one hollow-out parts 112.Therefore, the present invention greatlys save silver paste consumption, reduction electricity using segmentation main grid
Pond manufacturing cost.
When the back of the body silver-colored main grid 1 provided with least one hollow-out parts 112 to realize segmentation when, the hollow-out parts 112 are shaped as
Rectangle, square, circle, ellipse, rhombus or arc and rectangular composite figure, but not limited to this.The back of the body silver is main
1-15 hollow-out parts 112 are preferably provided with grid 1, can be specifically 2,3,4,5,6,7 etc., but not limited to this.
When the silver-colored main grid 1 of the back of the body is by provided with disconnect interval 110 to realize segmentation, the disconnect interval 110 is provided with least 1
Connecting line 111, the back of the body silver main grid 11 is connected with each other by connecting line 111, and the back of the body silver main grid 11 passes through connecting line 111
It is connected with alum gate housing 20.
Be preferably formed as 1-15 disconnect interval 110 between the back of the body silver main grid 11, can be specifically 2,3,4,5
Individual, 6,7 etc., but not limited to this.
The disconnect interval 110 is preferably provided with 1-5 bar connecting lines, can be specifically 1,2,3, but not limited to this.
It should be noted that the two ends of the silver-colored main grid 1 of the back of the body in the present embodiment are identical with main body, and still, the two of the silver-colored main grid 1 of the back of the body
End can also be other shapes, such as triangle, bilinear shape, single linear, trapezoidal or ellipse, but not limited to this.
The region 12 of overlapping connection is formed between the alum gate line 2 and the silver-colored main grid 1 of the back of the body.Specifically join in the region 12 of overlapping connection
Dotted line frame as shown in Figure 1, it is centered around the surrounding of the silver-colored main grid 1 of the back of the body, it is ensured that form good between alum gate line and the silver-colored main grid of the back of the body
Good contact, it is ensured that the electric current collection effect of back electrode, so as to ensure the photoelectric transformation efficiency of solar cell.The He of alum gate line 2
Silicon chip is formed multiple sensitive areas 10 by the silver-colored main grid 1 of the back of the body, so as to realize that the back side of solar cell absorbs solar energy.
In the region 12 of overlapping connection, the silver-colored main grid 1 of the covering of alum gate line 2 back of the body can improve the conduction of back electrode structure
Rate, improves the electric current collection effect of back electrode, so as to ensure the photoelectric transformation efficiency of solar cell.
The width of the silver-colored main grid of the back of the body and alum gate line overlap join domain is 0.05-5mm.It is preferred that, the silver-colored main grid 1 of the back of the body
The width of join domain 12 overlapping with alum gate line 2 be 0.1-2mm, can be specifically 0.1 mm, 0.5 mm, 1.0 mm, 1.5 mm,
2.0mm, but not limited to this.The width of overlapping join domain 12 is 0.1-2mm, does not influence to carry on the back silver-colored main grid 1 and weldering during package assembling
The welding of band.
It is preferred that, the back electrode structure includes being parallel to each other between the silver-colored main grid 1 of at least two back ofs the body, the silver-colored main grid 1 of the back of the body.
The quantity of the silver-colored main grid 1 of the back of the body is 2-8 roots, and the width of the silver-colored main grid 1 of the back of the body is 0.5-5mm.
The quantity of the alum gate line is 20-300 roots, and the width of the alum gate line is 30-500 microns.
In the first embodiment of the back electrode structure shown in Fig. 1,2, the silver-colored main grid 1 of the back of the body is provided with five hollow-out parts
112.The hollow-out parts 112 are shaped as rectangle.
As Fig. 3 shows, the invention provides the second embodiment of back electrode structure, its from unlike first embodiment, institute
The silver-colored main grid 1 of the back of the body is stated provided with four hollow-out parts 112, the hollow-out parts 112 are shaped as arc and rectangular composite figure.
As Fig. 4 shows, the invention provides the 3rd embodiment of back electrode structure, its from unlike first embodiment, institute
Stating the silver-colored main grid 1 of the back of the body includes forming four disconnect intervals 110, institute between five back of the body silver main grids 11, each two back of the body silver main grid 11
Disconnect interval 110 is stated provided with 1 connecting line 111.
As Fig. 5 shows, the invention provides the fourth embodiment of back electrode structure, its from unlike first embodiment, institute
Stating the silver-colored main grid 1 of the back of the body includes forming four disconnect intervals 110, institute between five back of the body silver main grids 11, each two back of the body silver main grid 11
Disconnect interval 110 is stated provided with 2 connecting lines 111.
Accordingly, the present invention also provides a kind of p-type PERC double-sided solar batteries using above-mentioned back electrode structure, tool
Body such as Fig. 6（Fig. 6 is the alum gate situation parallel with lbg）It is shown, including the silver-colored main grid 1 of the back of the body, alum gate line 2, backside passivation layer, P
Type silicon 5, N-type emitter stage 6, front passivation layer 7 and positive silver electrode 8, wherein, the backside passivation layer include back side silicon nitride 3,
Backside oxide aluminium film 4, front passivation layer 7 can be front side silicon nitride film, but not limited to this.
The back side silicon nitride 3 and backside oxide aluminium film 4 form what 30-500 groups be arranged in parallel after lbg
1-50 group lbg units are set in lbg area 9, each lbg area；A pair of alum gate line 2 and lbg area 9 one
It should set, the alum gate line 2 is connected by lbg area 9 with P-type silicon 5；Main grid 1 is vertical is connected with back of the body silver for the alum gate line 2.
The present invention existing one side PERC solar cells are improved, no longer provided with full aluminum back electric field, but by its
Become many alum gate lines 2, opened using laser is opened up in lbg technology overleaf silicon nitride film 3 and backside oxide aluminium film 4
Groove area 9, and alum gate line 2 is printed in the lbg area 9 that these be arranged in parallel, so as to form localized contact with P-type silicon 5,
The alum gate line 2 of intensive parallel arrangement can not only play raising open-circuit voltage Voc and short circuit current flow Jsc, and reduction minority carrier is answered
Conjunction rate, improves the effect of cell photoelectric conversion efficiency, the full aluminum back electric field of alternative existing one side battery structure, and alum gate line
2 do not cover the back side of silicon chip comprehensively, and sunshine can be projected in silicon chip between alum gate line 2, so as to realize that silicon chip back side is inhaled
Luminous energy is received, the photoelectric transformation efficiency of battery is greatly improved.
Preferably, the radical of the alum gate line 2 is corresponding with the number in lbg area, is all 30-500 bars, more preferably, institute
The radical for stating alum gate line 2 is 80-220 bars.
It is illustrated in figure 7 silicon chip back side, alum gate line 2 and the perpendicular connection of the silver-colored main grid 1 of the back of the body.Alum gate line 2 and the silver-colored main grid 1 of the back of the body
Designing points are identical with the back electrode structure shown in Fig. 1-5, will not be repeated here.Due to back side silicon nitride 3 and backside oxide
Aluminium film 4 is provided with lbg area 9, and during printing aluminium paste formation alum gate line 2, aluminium paste is filled to lbg area 9 so that alum gate line 2
Localized contact is formed with P-type silicon 5, can be by electric transmission to alum gate line 2, the silver-colored main grid 1 of the back of the body intersected with alum gate line 2 then collects alum gate
Electronics on line 2, it follows that alum gate line 2 of the present invention plays raising open-circuit voltage Voc and short circuit current flow Jsc, reduction is few
Number Carrier recombination rate, and full aluminum back electric field in the effect of electronics, alternative existing one side solar cell is transmitted, not only subtract
The consumption of few silver paste and aluminium paste, reduces production cost, and realizes two-sided absorption luminous energy, is significantly expanded the application of solar cell
Scope and raising photoelectric transformation efficiency.
It should be noted that the silicon chip back side shown in Fig. 7 uses Fig. 1, first of back electrode structure shown in 2 implemented
Example, certainly, it can also be implemented using the second embodiment shown in Fig. 3, the 3rd embodiment shown in Fig. 4, the shown in Fig. 5 the 4th
The back electrode structure of example, embodiments thereof is not limited to illustrated embodiment of the present invention.
The alum gate line can be parallel or vertical with lbg area.
When alum gate line is parallel with lbg area, more than 2 groups lbg units, adjacent two are set in lbg area
Spacing between the lbg unit that group be arranged in parallel is 5-300 μm.
The width in lbg area 9 of the present invention is 10-500 μm；Alum gate line 2 positioned at lbg area 9 lower section
Width is more than the width in lbg area 9, and the width of alum gate line 2 is 30-550 μm.Plurality is selected in the above-mentioned width of alum gate line 2
Value is such as 500 μm, and multigroup lbg area 9 can be located at same by the selection of the width of lbg area 9 side by side compared with such as 40 μm of fractional value
On alum gate line 2, it is ensured that alum gate line 2 has enough contacts area with P-type silicon 5.
When alum gate line is vertical with lbg area, the spacing between the lbg unit is 0.5-50mm.
Further, every group of lbg unit includes at least one lbg unit, the pattern of the lbg unit
For lines, circle, ellipse, triangle, quadrangle, pentagon, hexagon, cross or star.It is preferred that, the laser is opened
The pattern of groove unit is the dotted line that a continuous straight line or multiple line segments are constituted；When the pattern of the lbg unit is many
During the dotted line of individual line segment composition, the length of the line segment is identical or different.Alum gate line 2 can be linear, shaped form, wave
Shape, zigzag, but not limited to this.The arrangement mode of every group of lbg unit can also be linear, shaped form, waveform,
Zigzag, but not limited to this.The shape of alum gate line is identical with the arrangement mode of every group of lbg unit.
Therefore, p-type PERC double-sided solar batteries of the present invention, which change, is provided with a plurality of alum gate line 2 be arrangeding in parallel, no
Only substitute full aluminum back electric field in existing one side solar cell and realize back side extinction, be additionally operable to carry on the back the secondary grid structure in silver electrode and use
Make conduction electronics.P-type PERCP types PERC double-sided solar batteries of the present invention are made, the consumption of silver paste and aluminium paste can be saved,
Production cost is reduced, and realizes two-sided absorption luminous energy, the application of solar cell is significantly expanded and improves opto-electronic conversion
Efficiency.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than the present invention is protected
The limitation of scope is protected, although being explained in detail with reference to preferred embodiment to the present invention, one of ordinary skill in the art should
Understand, technical scheme can be modified or equivalent substitution, without departing from the essence of technical solution of the present invention
And scope.
Claims (10)
1. a kind of back electrode structure of p-type PERC double-sided solar batteries, it is characterised in that the back electrode structure is included at least
The silver-colored main grid of one back of the body, a plurality of alum gate line and alum gate housing being parallel to each other, the alum gate line and the silver-colored main grid of the back of the body are vertically connected, described
A plurality of alum gate line is surrounded by the alum gate housing；
The region of overlapping connection is formed between the alum gate line and the silver-colored main grid of the back of the body, the region of the overlapping connection is centered around the back of the body
The surrounding of silver-colored main grid, in the region of overlapping connection, the silver-colored main grid of the alum gate line covering back of the body；
The silver-colored main grid of the back of the body includes forming disconnect interval between at least two back of the body silver main grids, each two back of the body silver main grid, described
Disconnect interval is connected with each other provided with least 1 connecting line, the back of the body silver main grid by connecting line, and the back of the body silver main grid passes through
Connecting line is connected with alum gate housing；Or, the silver-colored main grid of the back of the body is provided with least one hollow-out parts.
2. back electrode structure as claimed in claim 1, it is characterised in that the disconnect interval is provided with 1-5 bar connecting lines.
3. back electrode structure as claimed in claim 1, it is characterised in that the hollow-out parts are shaped as rectangle, square, circle
Shape, ellipse, rhombus or arc and rectangular composite figure.
4. back electrode structure as claimed in claim 1, it is characterised in that the silver-colored main grid of the back of the body is provided with 1-15 hollow-out parts；
Or form 1-15 disconnect interval between back of the body silver main grid.
5. back electrode structure as claimed in claim 1, it is characterised in that the quantity of the silver-colored main grid of the back of the body is 2-8 roots, the back of the body silver
The width of main grid is 0.5-5mm；
The quantity of the alum gate line is 20-300 roots, and the width of the alum gate line is 30-500 microns；
The width of the silver-colored main grid of the back of the body and alum gate line overlap join domain is 0.05-5mm.
6. a kind of p-type PERC double-sided solar batteries, it is characterised in that including the silver-colored main grid of the back of the body, alum gate line, backside passivation layer, p-type
Silicon, N-type emitter stage, front passivation layer and positive silver electrode, it is parallel that the backside passivation layer forms several after lbg
At least 1 group lbg unit is set in the lbg area of setting, each lbg area；Alum gate line and lbg area one
One is correspondingly arranged, and the alum gate line is connected by lbg area with P-type silicon, and main grid is vertical is connected with back of the body silver for the alum gate line,
The a plurality of alum gate line is surrounded by the alum gate housing；
The region of overlapping connection is formed between the alum gate line and the silver-colored main grid of the back of the body, the region of the overlapping connection is centered around the back of the body
The surrounding of silver-colored main grid, in the region of overlapping connection, the silver-colored main grid of the alum gate line covering back of the body；
The silver-colored main grid of the back of the body includes forming disconnect interval between at least two back of the body silver main grids, each two back of the body silver main grid, described
Disconnect interval is connected with each other provided with least 1 connecting line, the back of the body silver main grid by connecting line, and the back of the body silver main grid passes through
Connecting line is connected with alum gate housing；Or, the silver-colored main grid of the back of the body is provided with least one hollow-out parts.
7. p-type PERC double-sided solar batteries as claimed in claim 6, it is characterised in that the silver-colored main grid of the back of the body is provided with 1-15
Individual hollow-out parts, the hollow-out parts are shaped as rectangle, square, circle, ellipse, rhombus or arc and rectangular group
Close figure；
Or, 1-15 disconnect interval is formed between back of the body silver main grid, the disconnect interval is provided with 1-5 bar connecting lines.
8. p-type PERC double-sided solar batteries as claimed in claim 6, it is characterised in that the quantity of the silver-colored main grid of the back of the body is 2-8
Root, the width of the silver-colored main grid of the back of the body is 0.5-5mm；
The quantity of the alum gate line is 20-300 roots, and the width of the alum gate line is 30-500 microns；
The width of the silver-colored main grid of the back of the body and alum gate line overlap join domain is 0.05-5mm.
9. p-type PERC double-sided solar batteries as claimed in claim 6, it is characterised in that the alum gate line and lbg area
It is parallel,
At least 2 groups lbg units of setting in each lbg area, the lbg unit that two adjacent groups be arranged in parallel it
Between spacing be 5-300 μm；
The width in the lbg area is 10-500 μm；The width of alum gate line below lbg area is opened more than laser
The width in groove area, the width of alum gate line is 30-550 μm.
10. p-type PERC double-sided solar batteries as claimed in claim 6, it is characterised in that the alum gate line and lbg area
Vertically,
Spacing between the lbg unit is 0.5-50mm.
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| CN111002701A (en) * | 2019-11-05 | 2020-04-14 | 晋能清洁能源科技股份公司 | Four-segment back electrode back electric field screen printing plate for improving assembly cold welding and application thereof |
| CN111863980A (en) * | 2020-07-28 | 2020-10-30 | 浙江晶科能源有限公司 | Back metallization structure of solar cell and preparation method thereof |
| CN112599615A (en) * | 2021-03-05 | 2021-04-02 | 浙江正泰太阳能科技有限公司 | N-type Topcon battery with double-sided aluminum paste electrode and preparation method thereof |
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Application publication date: 20170725 |