CN206921832U - The back electrode structure and battery of p-type PERC double-sided solar batteries - Google Patents
The back electrode structure and battery of p-type PERC double-sided solar batteries Download PDFInfo
- Publication number
- CN206921832U CN206921832U CN201720201604.1U CN201720201604U CN206921832U CN 206921832 U CN206921832 U CN 206921832U CN 201720201604 U CN201720201604 U CN 201720201604U CN 206921832 U CN206921832 U CN 206921832U
- Authority
- CN
- China
- Prior art keywords
- silver
- main grid
- alum gate
- gate line
- colored
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of back electrode structure of p-type PERC double-sided solar batteries, the back electrode structure includes the silver-colored main grid of at least one back of the body, a plurality of alum gate line and alum gate housing being parallel to each other；The region of overlapping connection is formed between the alum gate line and the silver-colored main grid of the back of the body, the region of the overlapping connection is centered around the surrounding of the silver-colored main grid of the back of the body, and in the region of overlapping connection, silver-colored main grid is carried on the back in the alum gate line covering；The silver-colored main grid of the back of the body includes at least two back of the body silver main grids, disconnect interval is formed between each two back of the body silver main grid, the disconnect interval is provided with least 1 connecting line, and the back of the body silver main grid is connected with each other by connecting line, and the back of the body silver main grid is connected by connecting line with alum gate housing；Or the silver-colored main grid of the back of the body is provided with least one hollow-out parts.Accordingly, a kind of p-type PERC double-sided solar batteries using above-mentioned back electrode structure are also disclosed in the utility model.Simple in construction using the utility model, cost is relatively low, good conductivity, and the photoelectric transformation efficiency of battery is high.
Description
Technical field
It the utility model is related to area of solar cell, more particularly to a kind of back of the body electricity of p-type PERC double-sided solar batteries
Pole structure and the battery using above-mentioned back electrode structure.
Background technology
Solar cell power generation is that solar energy is converted into electric energy using solar cell, because it is green ring
Product is protected, environmental pollution will not be caused, and is renewable resource, so in the case of current energy shortage, solar-electricity
Pond is a kind of novel energy for having broad based growth future.
The Making programme of p-type PERC double-sided solar batteries includes：Making herbs into wool, diffusion, etching, backside passivation layer deposition,
PECVD back side coating films, positive PECVD plated films, silk-screen printing, sintering, annealing.Solar battery sheet is converting light energy into electric energy
During, photo-generated carrier caused by its inside needs the electrode by outside printing to collect and draw, then with external electrical
Road connects, so as to which electric current be transported out.Above-mentioned silkscreen process is further subdivided into the back electrode of solar cell
Printing and positive electrode printing.Back electrode printing is divided into silver-colored primary gate electrode printing and the printing of aluminium pair gate electrode again.Positive electrode slurry and
Back electrode slurry is printed on crystal silicon solar battery front, through oversintering, plays a part of collected current.Backplate figure
Design determines the electric current collection effect and light-receiving area of back of the body passivation cell, so as to influence the photoelectric transformation efficiency of battery, therefore
Need to propose a kind of new backplate, the electric conductivity of electrode can be improved, reduce shading-area, improve the opto-electronic conversion of battery
Efficiency.
Utility model content
Technical problem to be solved in the utility model is, there is provided a kind of back of the body electricity of p-type PERC double-sided solar batteries
Pole structure, simple in construction, cost is relatively low, good conductivity, and the photoelectric transformation efficiency of battery is high, can meet a variety of different situations
Need.
Technical problem to be solved in the utility model also resides in, there is provided a kind of p-type PERC double-sided solar batteries, it is conductive
Property it is good, photoelectric transformation efficiency is high, the photoelectric transformation efficiency of battery is high, the needs of a variety of different situations can be met.
In order to solve the above-mentioned technical problem, the utility model provides a kind of back of the body electricity of p-type PERC double-sided solar batteries
Pole structure, the back electrode structure includes the silver-colored main grid of at least one back of the body, a plurality of alum gate line and alum gate housing being parallel to each other, described
Alum gate line and the silver-colored main grid vertical connection of the back of the body, a plurality of alum gate line are surrounded by the alum gate housing；
The region of overlapping connection is formed between the alum gate line and the silver-colored main grid of the back of the body, the region of the overlapping connection is centered around institute
The surrounding for carrying on the back silver-colored main grid is stated, in the region of overlapping connection, silver-colored main grid is carried on the back in the alum gate line covering；
The silver-colored main grid of the back of the body includes at least two back of the body silver main grids, and disconnect interval is formed between each two back of the body silver main grid,
The disconnect interval is provided with least 1 connecting line, and the back of the body silver main grid is connected with each other by connecting line, the back of the body silver main grid
It is connected by connecting line with alum gate housing；Or the silver-colored main grid of the back of the body is provided with least one hollow-out parts.
As the preferred embodiment of such scheme, the disconnect interval is provided with 1-5 bar connecting lines.
As the preferred embodiment of such scheme, the hollow-out parts are shaped as rectangle, square, circle, ellipse, water chestnut
Shape or arc and rectangular composite figure.
As the preferred embodiment of such scheme, the silver-colored main grid of the back of the body is provided with 1-15 hollow-out parts；
Or form 1-15 disconnect interval between back of the body silver main grid.
As the preferred embodiment of such scheme, the quantity of the silver-colored main grid of the back of the body is 2-8 roots, and the width of the silver-colored main grid of the back of the body is
0.5-5mm；
The quantity of the alum gate line is 20-300 roots, and the width of the alum gate line is 30-500 microns；
The width of the silver-colored main grid of the back of the body and alum gate line overlap join domain is 0.05-5mm.
Accordingly, the utility model also provides a kind of p-type PERC double-sided solar batteries, including the silver-colored main grid of the back of the body, alum gate line,
Backside passivation layer, P-type silicon, N-type emitter stage, front passivation layer and positive silver electrode, the backside passivation layer is after lbg
Several lbg areas be arrangeding in parallel are formed, at least 1 group of lbg unit is set in each lbg area；Alum gate line
Correspond and set with lbg area, the alum gate line is connected by lbg area with P-type silicon, the alum gate line and back of the body silver
Main grid vertical connection, a plurality of alum gate line are surrounded by the alum gate housing；
The region of overlapping connection is formed between the alum gate line and the silver-colored main grid of the back of the body, the region of the overlapping connection is centered around institute
The surrounding for carrying on the back silver-colored main grid is stated, in the region of overlapping connection, silver-colored main grid is carried on the back in the alum gate line covering；
The silver-colored main grid of the back of the body includes at least two back of the body silver main grids, and disconnect interval is formed between each two back of the body silver main grid,
The disconnect interval is provided with least 1 connecting line, and the back of the body silver main grid is connected with each other by connecting line, the back of the body silver main grid
It is connected by connecting line with alum gate housing；Or the silver-colored main grid of the back of the body is provided with least one hollow-out parts.
As the preferred embodiment of such scheme, the silver-colored main grid of the back of the body is provided with 1-15 hollow-out parts, the shape of the hollow-out parts
Shape is rectangle, square, circle, ellipse, rhombus or arc and rectangular composite figure；
Or 1-15 disconnect interval is formed between back of the body silver main grid, the disconnect interval is provided with 1-5 bar connecting lines.
As the preferred embodiment of such scheme, the quantity of the silver-colored main grid of the back of the body is 2-8 roots, and the width of the silver-colored main grid of the back of the body is
0.5-5mm；
The quantity of the alum gate line is 20-300 roots, and the width of the alum gate line is 30-500 microns；
The width of the silver-colored main grid of the back of the body and alum gate line overlap join domain is 0.05-5mm.
As the preferred embodiment of such scheme, the alum gate line is parallel with lbg area,
At least 2 groups of lbg units, the lbg list that two adjacent groups be arranged in parallel are set in each lbg area
Spacing between member is 5-300 μm；
The width in the lbg area is 10-500 μm；The width of alum gate line below lbg area, which is more than, to swash
The width of light slotted zones, the width of alum gate line is 30-550 μm.
As the preferred embodiment of such scheme, the alum gate line is vertical with lbg area,
Spacing between the lbg unit is 0.5-50mm.
Implement the utility model, have the advantages that：
The utility model provides a kind of back electrode structure of p-type PERC double-sided solar batteries, can both substitute existing list
The effect of full aluminum back electric field, the also function with current－carrying conductor in the solar battery structure of face, it is double suitable for being installed in p-type PERC
The back side of face solar cell is as backplate.Specifically, back electrode structure, which includes at least one, carries on the back silver-colored main grid and a plurality of phase
Mutually parallel alum gate line, alum gate line and the silver-colored main grid vertical connection of the back of the body；The area of overlapping connection is formed between alum gate line and the silver-colored main grid of the back of the body
Domain, the region of overlapping connection are centered around the surrounding for carrying on the back silver-colored main grid, it is ensured that are formed well between alum gate line and the silver-colored main grid of the back of the body
Contact, ensure the electric current collection effect of back electrode, so as to ensure the photoelectric transformation efficiency of solar cell.In the area of overlapping connection
Domain, the covering of alum gate line carry on the back silver-colored main grid, can improve the conductance of back electrode structure, improve the electric current collection effect of back electrode, from
And ensure the photoelectric transformation efficiency of solar cell.
For the utility model using segmentation main grid, that is, carrying on the back silver-colored main grid includes at least two back of the body silver main grids, each two back of the body silver
Disconnect interval is formed between main grid, disconnect interval is provided with least 1 connecting line, and the back of the body silver main grid is mutually interconnected by connecting line
Connect, the back of the body silver main grid is connected by connecting line with alum gate housing；Or carry on the back silver-colored main grid and be provided with least one hollow-out parts,
Silver paste dosage is greatlyd save, reduces battery manufacture cost.
The utility model also provides a kind of p-type PERC double-sided solar batteries using above-mentioned back electrode structure, and it is in electricity
The pond back side is provided with a plurality of alum gate line be arrangeding in parallel, not only substitutes full aluminum back electric field in existing one side solar cell, realizes the back of the body
The function of face extinction, also serve as the secondary grid structure in back of the body silver electrode and be used to conduct electronics.Make p-type described in the utility model
PERCP type PERC double-sided solar batteries, silver paste and the dosage of aluminium paste can be saved, reduce production cost, and realize two-sided suction
Luminous energy is received, the application of solar cell is significantly expanded and improves photoelectric transformation efficiency.
Brief description of the drawings
Fig. 1 is the structural representation of the back electrode structure first embodiment of p-type PERC double-sided solar batteries；
Fig. 2 be A-A shown in Fig. 1 to profile；
Fig. 3 is the structural representation of the back electrode structure second embodiment of p-type PERC double-sided solar batteries；
Fig. 4 is the structural representation of the back electrode structure 3rd embodiment of p-type PERC double-sided solar batteries；
Fig. 5 is the structural representation of the back electrode structure fourth embodiment of p-type PERC double-sided solar batteries；
Fig. 6 is the profile of p-type PERC double-sided solar batteries；
Fig. 7 is the structure schematic diagram of p-type PERC double-sided solar batteries.
Embodiment
It is new to this practicality below in conjunction with accompanying drawing to make the purpose of this utility model, technical scheme and advantage clearer
Type is described in further detail.
In recent years, with the further investigation of scientist and technical staff, it was found that a kind of PERC solar energy of passivating back
Battery can further improve the photoelectric transformation efficiency of battery.But the pellumina at the back side and silicon nitride film are insulating barrier, it is impossible to
Electronics is conducted, therefore conventional way is slotted on the silicon nitride below grid line, when printing grid line, silver paste can be filled into fluting
Ohmic contact is formed with P-type silicon in area, so as to realize conducting function.
Existing PERC one sides solar cell is provided with the whole back of the body that full aluminum back electric field is covered in silicon chip at the back side of battery
Face, the effect of full aluminum back electric field are to improve open-circuit voltage Voc and short circuit current Jsc, force minority carrier away from surface, few
Number Carrier recombination rate reduces, so as to improve battery efficiency on the whole.However, because full aluminum back electric field is light tight, therefore, have
The rear surface of solar cell of full aluminum back electric field can not absorb luminous energy, positive can only absorb luminous energy, its photoelectric transformation efficiency is difficult to greatly
The raising of amplitude.
Therefore, the utility model proposes a kind of new backplate, existing one side solar battery structure can have both been substituted
In full aluminum back electric field effect, the also function with current－carrying conductor, the back of the body suitable for being installed in p-type PERC double-sided solar batteries
Face is as backplate.
With reference to Fig. 1-5, the utility model provides a kind of a variety of of back electrode structure of p-type PERC double-sided solar batteries
Embodiment, the back electrode structure include the silver-colored main grid 1 of at least one back of the body, a plurality of alum gate line 2 and alum gate housing 20 being parallel to each other,
The alum gate line 2 and the silver-colored vertical connection of main grid 1 of the back of the body, a plurality of alum gate line 2 are surrounded by alum gate housing 20, and the back of the body silver is main
Grid 1 include at least two back of the body silver main grids 11, and disconnect interval 110 is formed between each two back of the body silver main grid 11；Or the back of the body
Silver-colored main grid 1 is provided with least one hollow-out parts 112.Therefore, the utility model greatlys save silver paste dosage using main grid is segmented,
Reduce battery manufacture cost.
When the silver-colored main grid 1 of the back of the body is provided with least one hollow-out parts 112 to realize segmentation, the hollow-out parts 112 are shaped as
Rectangle, square, circle, ellipse, rhombus or arc and rectangular composite figure, but not limited to this.The back of the body silver is main
1-15 hollow-out parts 112 are preferably provided with grid 1, can be specifically 2,3,4,5,6,7 etc., but not limited to this.
When carrying on the back silver-colored main grid 1 by provided with disconnect interval 110 to realize segmentation, the disconnect interval 110 is provided with least 1
Connecting line 111, the back of the body silver main grid 11 are connected with each other by connecting line 111, and the back of the body silver main grid 11 passes through connecting line 111
It is connected with alum gate housing 20.
Be preferably formed as 1-15 disconnect interval 110 between the back of the body silver main grid 11, can be specifically 2,3,4,5
It is individual, 6,7 etc., but not limited to this.
The disconnect interval 110 is preferably provided with 1-5 bar connecting lines, can be specifically 1,2,3, but not limited to this.
It should be noted that the both ends of the silver-colored main grid 1 of the back of the body in the present embodiment are identical with main body, still, the two of silver-colored main grid 1 is carried on the back
End can also be other shapes, such as triangle, bilinear shape, single linear, trapezoidal or oval, but not limited to this.
The region 12 of overlapping connection is formed between the alum gate line 2 and the silver-colored main grid 1 of the back of the body.Specifically join in the region 12 of overlapping connection
Dotted line frame as shown in Figure 1, it is centered around the surrounding for carrying on the back silver-colored main grid 1, it is ensured that is formed between alum gate line and the silver-colored main grid of the back of the body good
Good contact, ensure the electric current collection effect of back electrode, so as to ensure the photoelectric transformation efficiency of solar cell.The He of alum gate line 2
Carry on the back silver-colored main grid 1 and silicon chip is formed into multiple sensitive areas 10, so as to realize that the back side of solar cell absorbs solar energy.
In the region 12 of overlapping connection, the covering of alum gate line 2 carries on the back silver-colored main grid 1, can improve the conduction of back electrode structure
Rate, the electric current collection effect of back electrode is improved, so as to ensure the photoelectric transformation efficiency of solar cell.
The width of the silver-colored main grid of the back of the body and alum gate line overlap join domain is 0.05-5mm.Preferably, the silver-colored main grid 1 of the back of the body
The width of join domain 12 overlapping with alum gate line 2 is 0.1-2mm, can be specifically 0.1 mm, 0.5 mm, 1.0 mm, 1.5 mm,
2.0mm, but not limited to this.The width of overlapping join domain 12 is 0.1-2mm, does not influence to carry on the back silver-colored main grid 1 and weldering during package assembling
The welding of band.
Preferably, the back electrode structure includes at least two silver-colored main grids 1 of the back of the body, is parallel to each other between the silver-colored main grid 1 of the back of the body.
The quantity of the silver-colored main grid 1 of the back of the body is 2-8 roots, and the width of the silver-colored main grid 1 of the back of the body is 0.5-5mm.
The quantity of the alum gate line is 20-300 roots, and the width of the alum gate line is 30-500 microns.
In the first embodiment of the back electrode structure shown in Fig. 1,2, the silver-colored main grid 1 of the back of the body is provided with five hollow-out parts
112.The hollow-out parts 112 are shaped as rectangle.
As Fig. 3 shows, the utility model provides the second embodiment of back electrode structure, and it is different from first embodiment
It is that the silver-colored main grid 1 of the back of the body is provided with four hollow-out parts 112, and the hollow-out parts 112 are shaped as arc and rectangular constitutional diagram
Shape.
As Fig. 4 shows, the utility model provides the 3rd embodiment of back electrode structure, and it is different from first embodiment
It is that the silver-colored main grid 1 of the back of the body includes five back of the body silver main grids 11, and four disconnect intervals are formed between each two back of the body silver main grid 11
110, the disconnect interval 110 is provided with 1 connecting line 111.
As Fig. 5 shows, the utility model provides the fourth embodiment of back electrode structure, and it is different from first embodiment
It is that the silver-colored main grid 1 of the back of the body includes five back of the body silver main grids 11, and four disconnect intervals are formed between each two back of the body silver main grid 11
110, the disconnect interval 110 is provided with 2 connecting lines 111.
Accordingly, the utility model also provides a kind of p-type PERC double-sided solars electricity using above-mentioned back electrode structure
Pond, it is specific such as Fig. 6（Fig. 6 is the alum gate situation parallel with lbg）It is shown, including the silver-colored main grid 1 of the back of the body, alum gate line 2, the back side is blunt
Change layer, P-type silicon 5, N-type emitter stage 6, front passivation layer 7 and positive silver electrode 8, wherein, the backside passivation layer includes back side silicon nitride
Silicon fiml 3, backside oxide aluminium film 4, front passivation layer 7 can be front side silicon nitride films, but not limited to this.
The back side silicon nitride 3 and backside oxide aluminium film 4 form what 30-500 groups be arranged in parallel after lbg
Lbg area 9,1-50 group lbg units are set in each lbg area；A pair of alum gate line 2 and lbg area 9 one
It should set, the alum gate line 2 is connected by lbg area 9 with P-type silicon 5；The alum gate line 2 is with carrying on the back the silver-colored vertical connection of main grid 1.
The utility model is improved to existing one side PERC solar cells, no longer provided with full aluminum back electric field, but
Become many alum gate lines 2, it is sharp using being opened up in lbg technology overleaf silicon nitride film 3 and backside oxide aluminium film 4
Light slotted zones 9, and alum gate line 2 is printed in the lbg area 9 that these be arranged in parallel, so as to form local connect with P-type silicon 5
Touch, the alum gate line 2 of intensive parallel arrangement, which can not only play, improves open-circuit voltage Voc and short circuit current Jsc, reduces minority carrier
Recombination rate, improve the effect of cell photoelectric conversion efficiency, the full aluminum back electric field of alternative existing one side battery structure, and alum gate
Line 2 does not cover the back side of silicon chip comprehensively, and sunshine can be projected in silicon chip between alum gate line 2, so as to realize silicon chip back side
Luminous energy is absorbed, greatly improves the photoelectric transformation efficiency of battery.
Preferably, the radical of the alum gate line 2 is corresponding with the number in lbg area, is all 30-500 bars, more preferably, institute
The radical for stating alum gate line 2 is 80-220 bars.
Silicon chip back side is illustrated in figure 7, alum gate line 2 is with carrying on the back silver-colored 1 perpendicular connection of main grid.Alum gate line 2 is with carrying on the back silver-colored main grid 1
Designing points are identical with the back electrode structure shown in Fig. 1-5, will not be repeated here.Due to back side silicon nitride 3 and backside oxide
Aluminium film 4 is provided with lbg area 9, and when printing aluminium paste forms alum gate line 2, aluminium paste is filled to lbg area 9 so that alum gate line 2
Localized contact is formed with P-type silicon 5, can be by electric transmission to alum gate line 2, the back of the body silver main grid 1 intersected with alum gate line 2 then collects alum gate
Electronics on line 2, it follows that alum gate line 2 described in the utility model, which plays, improves open-circuit voltage Voc and short circuit current Jsc, drop
Low minority carrier recombination rate, and the effect of electronics is transmitted, full aluminum back electric field in alternative existing one side solar cell, no
Silver paste and the dosage of aluminium paste are only reduced, reduces production cost, and realizes two-sided absorption luminous energy, is significantly expanded solar cell
Application and raising photoelectric transformation efficiency.
It should be noted that the silicon chip back side shown in Fig. 7 is implemented using first of the back electrode structure shown in Fig. 1,2
Example, certainly, it can also use the second embodiment shown in Fig. 3, the 3rd embodiment shown in Fig. 4, and the 4th shown in Fig. 5 implements
The back electrode structure of example, embodiments thereof are not limited to the utility model illustrated embodiment.
The alum gate line can be parallel or vertical with lbg area.
When alum gate line is parallel with lbg area, more than 2 groups lbg units of setting in lbg area, adjacent two
Spacing between the lbg unit that group be arranged in parallel is 5-300 μm.
The width in lbg area 9 described in the utility model is 10-500 μm；Alum gate line positioned at the lower section of lbg area 9
2 width is more than the width in lbg area 9, and the width of alum gate line 2 is 30-550 μm.The above-mentioned width of alum gate line 2 selection compared with
Big such as 500 μm of numerical value, and multigroup lbg area 9 can be located at by the selection of the width of lbg area 9 side by side compared with such as 40 μm of fractional value
On same alum gate line 2, ensure that alum gate line 2 and P-type silicon 5 there are enough contacts area.
When alum gate line is vertical with lbg area, the spacing between the lbg unit is 0.5-50mm.
Further, every group of lbg unit includes at least one lbg unit, the pattern of the lbg unit
For lines, circle, ellipse, triangle, quadrangle, pentagon, hexagon, cross or star.Preferably, the laser is opened
The pattern of groove unit is the dotted line that a continuous straight line or multiple line segments form；When the pattern of the lbg unit is more
During the dotted line of individual line segment composition, the length of the line segment is identical or different.Alum gate line 2 can be linear, shaped form, wave
Shape, zigzag, but not limited to this.The arrangement mode of every group of lbg unit can also be linear, shaped form, waveform,
Zigzag, but not limited to this.The shape of alum gate line is identical with the arrangement mode of every group of lbg unit.
Therefore, p-type PERC double-sided solar batteries described in the utility model, which change, is provided with a plurality of alum gate line be arrangeding in parallel
2, not only substitute full aluminum back electric field in existing one side solar cell and realize back side extinction, be additionally operable to carry on the back the secondary grid knot in silver electrode
Structure is used as conduction electronics.P-type PERCP types PERC double-sided solar batteries described in the utility model are made, silver paste and aluminium can be saved
The dosage of slurry, production cost is reduced, and realize two-sided absorption luminous energy, be significantly expanded application and the raising of solar cell
Photoelectric transformation efficiency.
Finally, it should be noted that above example is only illustrating the technical solution of the utility model rather than to this reality
With the limitation of novel protected scope, although being explained in detail with reference to preferred embodiment to the utility model, this area it is common
It will be appreciated by the skilled person that the technical solution of the utility model can be modified or equivalent substitution, without departing from this reality
With the spirit and scope of new technique scheme.
Claims (10)
1. a kind of back electrode structure of p-type PERC double-sided solar batteries, it is characterised in that the back electrode structure is included at least
The silver-colored main grid of one back of the body, a plurality of alum gate line and alum gate housing being parallel to each other, the alum gate line and the silver-colored main grid vertical connection of the back of the body, it is described
A plurality of alum gate line is surrounded by the alum gate housing；
The region of overlapping connection is formed between the alum gate line and the silver-colored main grid of the back of the body, the region of the overlapping connection is centered around the back of the body
The surrounding of silver-colored main grid, in the region of overlapping connection, silver-colored main grid is carried on the back in the alum gate line covering；
The silver-colored main grid of the back of the body includes at least two back of the body silver main grids, and disconnect interval is formed between each two back of the body silver main grid, described
Disconnect interval is provided with least 1 connecting line, and the back of the body silver main grid is connected with each other by connecting line, and the back of the body silver main grid passes through
Connecting line is connected with alum gate housing；Or the silver-colored main grid of the back of the body is provided with least one hollow-out parts.
2. back electrode structure as claimed in claim 1, it is characterised in that the disconnect interval is provided with 1-5 bar connecting lines.
3. back electrode structure as claimed in claim 1, it is characterised in that the hollow-out parts are shaped as rectangle, square, circle
Shape, ellipse, rhombus or arc and rectangular composite figure.
4. back electrode structure as claimed in claim 1, it is characterised in that the silver-colored main grid of the back of the body is provided with 1-15 hollow-out parts；
Or form 1-15 disconnect interval between back of the body silver main grid.
5. back electrode structure as claimed in claim 1, it is characterised in that the quantity of the silver-colored main grid of the back of the body is 2-8 roots, the back of the body silver
The width of main grid is 0.5-5mm；
The quantity of the alum gate line is 20-300 roots, and the width of the alum gate line is 30-500 microns；
The width of the silver-colored main grid of the back of the body and alum gate line overlap join domain is 0.05-5mm.
6. a kind of p-type PERC double-sided solar batteries, it is characterised in that including carrying on the back silver-colored main grid, alum gate line, backside passivation layer, p-type
Silicon, N-type emitter stage, front passivation layer and positive silver electrode, it is parallel that the backside passivation layer forms several after lbg
The lbg area of setting, at least 1 group of lbg unit is set in each lbg area；Alum gate line and lbg area one
One is correspondingly arranged, and the alum gate line is connected by lbg area with P-type silicon, the alum gate line and the silver-colored main grid vertical connection of the back of the body,
The a plurality of alum gate line is surrounded by the alum gate housing；
The region of overlapping connection is formed between the alum gate line and the silver-colored main grid of the back of the body, the region of the overlapping connection is centered around the back of the body
The surrounding of silver-colored main grid, in the region of overlapping connection, silver-colored main grid is carried on the back in the alum gate line covering；
The silver-colored main grid of the back of the body includes at least two back of the body silver main grids, and disconnect interval is formed between each two back of the body silver main grid, described
Disconnect interval is provided with least 1 connecting line, and the back of the body silver main grid is connected with each other by connecting line, and the back of the body silver main grid passes through
Connecting line is connected with alum gate housing；Or the silver-colored main grid of the back of the body is provided with least one hollow-out parts.
7. p-type PERC double-sided solar batteries as claimed in claim 6, it is characterised in that the silver-colored main grid of the back of the body is provided with 1-15
Individual hollow-out parts, the hollow-out parts are shaped as rectangle, square, circle, ellipse, rhombus or arc and rectangular group
Close figure；
Or 1-15 disconnect interval is formed between back of the body silver main grid, the disconnect interval is provided with 1-5 bar connecting lines.
8. p-type PERC double-sided solar batteries as claimed in claim 6, it is characterised in that the quantity of the silver-colored main grid of the back of the body is 2-8
Root, the width of the silver-colored main grid of the back of the body is 0.5-5mm；
The quantity of the alum gate line is 20-300 roots, and the width of the alum gate line is 30-500 microns；
The width of the silver-colored main grid of the back of the body and alum gate line overlap join domain is 0.05-5mm.
9. p-type PERC double-sided solar batteries as claimed in claim 6, it is characterised in that the alum gate line and lbg area
It is parallel,
Setting at least 2 groups of lbg units in each lbg area, the lbg unit that two adjacent groups be arranged in parallel it
Between spacing be 5-300 μm；
The width in the lbg area is 10-500 μm；The width of alum gate line below lbg area is opened more than laser
The width in groove area, the width of alum gate line is 30-550 μm.
10. p-type PERC double-sided solar batteries as claimed in claim 6, it is characterised in that the alum gate line and lbg area
Vertically,
Spacing between the lbg unit is 0.5-50mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720201604.1U CN206921832U (en) | 2017-03-03 | 2017-03-03 | The back electrode structure and battery of p-type PERC double-sided solar batteries |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720201604.1U CN206921832U (en) | 2017-03-03 | 2017-03-03 | The back electrode structure and battery of p-type PERC double-sided solar batteries |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206921832U true CN206921832U (en) | 2018-01-23 |
Family
ID=61311307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720201604.1U Active CN206921832U (en) | 2017-03-03 | 2017-03-03 | The back electrode structure and battery of p-type PERC double-sided solar batteries |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206921832U (en) |
-
2017
- 2017-03-03 CN CN201720201604.1U patent/CN206921832U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN114242810B (en) | Electrode structure of back contact battery, assembly and battery system | |
| CN106981524A (en) | The back electrode structure and battery of p-type PERC double-sided solar batteries | |
| CN110047952A (en) | Solar cell Al grid line structure and preparation method thereof | |
| CN209000938U (en) | A kind of structure of back contacts heterojunction solar battery component | |
| CN207753025U (en) | Portrait type photovoltaic laminate component | |
| CN106876486A (en) | The group string attachment structure of P-type crystal silicon back contacts double-side cell, component and method | |
| CN106847944A (en) | The backplate and battery of p-type PERC double-sided solar batteries | |
| CN204991723U (en) | Solar cell electrode | |
| CN208767310U (en) | A kind of solar energy back contact battery component can be used for generating electricity on two sides | |
| CN106847946A (en) | The back electrode structure and battery of p-type PERC double-sided solar batteries | |
| CN202523721U (en) | Positive grid line electrode structure of improved crystalline silicon cell | |
| CN206628475U (en) | The back electrode structure and battery of p-type PERC double-sided solar batteries | |
| CN107039545B (en) | The rear electrode and battery of p-type PERC double-sided solar battery | |
| CN106981527B (en) | The rear electrode and battery of p-type PERC double-sided solar battery | |
| CN206921832U (en) | The back electrode structure and battery of p-type PERC double-sided solar batteries | |
| CN106449804A (en) | Electrode grid line structure and solar battery piece | |
| CN106981526B (en) | The rear electrode and battery of p-type PERC double-sided solar battery | |
| CN206628481U (en) | The back electrode structure and battery of p-type PERC double-sided solar batteries | |
| CN206697491U (en) | The backplate and battery of p-type PERC double-sided solar batteries | |
| CN106981528B (en) | Back electrode of P-type PERC double-sided solar cell and cell | |
| CN109713074A (en) | A kind of battery strings based on IBC battery | |
| CN206697488U (en) | The backplate and battery of p-type PERC double-sided solar batteries | |
| CN206628479U (en) | The backplate and battery of p-type PERC double-sided solar batteries | |
| CN106876494A (en) | The back electrode structure and battery of p-type PERC double-sided solar batteries | |
| CN206697490U (en) | The backplate and battery of p-type PERC double-sided solar batteries |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |