CN209000938U - A kind of structure of back contacts heterojunction solar battery component - Google Patents
A kind of structure of back contacts heterojunction solar battery component Download PDFInfo
- Publication number
- CN209000938U CN209000938U CN201821499655.8U CN201821499655U CN209000938U CN 209000938 U CN209000938 U CN 209000938U CN 201821499655 U CN201821499655 U CN 201821499655U CN 209000938 U CN209000938 U CN 209000938U
- Authority
- CN
- China
- Prior art keywords
- type
- main gate
- gate line
- thin grid
- grid line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model discloses a kind of structures of back contacts heterojunction solar battery component, comprising: the sub- cell piece of multiple series connections, the N-type main gate line and p-type main gate line of adjacent subcell piece are electrically connected, wherein at least two panels is that main cell piece is split to form from main gate line between adjacent subcell piece, wherein the main battery piece includes: N-type back contact heterojunction solar battery piece；It is located at the passive electrode in solar cell back face, and the N-type electrode and P-type electrode of cross arrangement, the passive electrode includes the thin grid line of N-type, N-type main gate line, the thin grid line of p-type and p-type main gate line, the N-type electrode and the thin grid line of N-type form electrical connection, P-type electrode and the thin grid line of p-type form electrical connection or P-type electrode and the thin grid line of N-type forms electrical connection, and N-type electrode and the thin grid line of p-type form electrical connection, wherein, the thin grid line of N-type and the thin grid line of p-type are in finger-like cross arrangement.
Description
Technical field
The present invention relates to technical field of solar batteries more particularly to a kind of back contacts heterojunction solar battery components
Structure.
Background technique
Solar battery is a kind of semiconductor devices that can convert solar energy into electric energy, the solar-electricity under illumination condition
Photogenerated current can be generated inside pond, by electrode by power output.In recent years, manufacture of solar cells technology is constantly progressive, raw
Producing cost constantly reduces, and transfer efficiency is continuously improved, solar cell power generation using increasingly extensive and become power supply
Important energy source.
High efficiency solar cell is the trend of Mirae Corp., because high efficiency solar cell is not only to promote unit
The power generation wattage of area can also reduce cost, that is, the surcharge that can be generated electricity with hoisting module.
Current one of high efficiency solar cell is back contact battery, and back contact battery is by the electrode of light-receiving surface
The back side all is moved on to, so that the area of light-receiving surface maximizes, so that the transfer efficiency of battery is improved, it is representative for the U.S.
SUN POWER.When being traditional back battery technology, thin gate electrode and pad account for rear surface most areas, two-sided hair
The ability of electricity has received very big limitation.
Another high efficiency solar cell is the solar battery using hetero-junctions, and heterojunction solar battery is usually
The passivation layer and amorphous silicon electrode of growth amorphous silicon (a-Si) on silicon, with extremely low recombination-rate surface, therefore
Possess very high open-circuit voltage.More representational is the HIT technology of Matsushita Corporation of Japan.Due to intimate double-sided symmetrical
Design, HIT cell piece have the ability of generating electricity on two sides, and under the premise of ground return is comparatively ideal, solar double-glass assemblies can provide volume
Outer gene-ration revenue.
However, back contacts heterojunction solar battery technology is inevitably the N-type main grid of collection electronics and collection
The p-type main gate line in hole is put into the back side of cell piece simultaneously.And it carries on the back battery and the back side will increase using wide main gate line design
Shielding surface causes the short circuit current of positive planar survey electrical property to decline.
Summary of the invention
In order to solve the problems in the prior art, the present invention provides a kind of back contacts heterojunction solar battery components
Structure comprising:
The sub- cell piece of multiple series connections, N-type main gate line and p-type the main gate line electrical connection of adjacent subcell piece, wherein
At least two panels is that main cell piece is split to form from main gate line between adjacent subcell piece, wherein the main battery piece includes:
The sub- cell piece of multiple series connections, N-type main gate line and p-type the main gate line electrical connection of adjacent subcell piece, wherein
At least two panels is that main cell piece is split to form from main gate line between adjacent subcell piece, wherein the main battery piece includes:
N-type back contact heterojunction solar battery piece；
It is located at the passive electrode in solar cell back face and the N-type electrode of cross arrangement and P-type electrode, the receipts
Collector includes the thin grid line of N-type, N-type main gate line, the thin grid line of p-type and p-type main gate line, and N-type electrode and the thin grid line formation of N-type are electrically connected
It connects, P-type electrode and the thin grid line of p-type form electrical connection or P-type electrode and the thin grid line formation electrical connection of N-type, N-type electrode and p-type
Thin grid line forms electrical connection, and wherein the thin grid line of N-type and the thin grid line of p-type are in finger-like cross arrangement；The thin grid line of N-type and N-type main gate line
Electrical connection is formed, the thin grid line of p-type and p-type main gate line form electrical connection, and N-type main gate line and p-type main gate line are in cross arrangement.
Preferably, adjacent subcell piece is that main cell piece is divided equally along intermediate main gate line and formed, respectively after sub- cell piece
Wherein it is connected in series after a piece of 180 ° of rotation counterclockwise with another sub- cell piece.
Preferably, adjacent subcell piece is that main cell piece is divided equally along intermediate main gate line and formed, respectively after sub- cell piece
Wherein it is connected in series after a piece of 180 ° of rotation counterclockwise with another sub- cell piece.
Preferably, pass through welding or the formation electrical contact of conductive tape bonding between the adjacent subcell piece.
Preferably, it is connected between the adjacent subcell piece by least one welding, the welding is that thickness is uneven
Welding, welding are equipped with aperture or fluting.
Preferably, the welding is copper, silver, indium or tin, and it is highly 50 μm of -300 μ that the width of welding, which is 0.8 ㎜ -3 ㎜,
m。
Preferably, the N-type electrode includes amorphous silicon passivation layer, electronics collecting layer, transparency conducting layer and seed metal layer
Or barrier layer, wherein the amorphous silicon passivation layer is the thin layer of silicon dioxide with a thickness of 0.5~1.5nm, electronics collecting layer is N
The amorphous silicon or polysilicon of type doping.
Preferably, the thin grid line of the N-type and the thin grid line of p-type are copper electroplating layer and the protective layer being located in layers of copper or are silver
The width of pulp layer, the thin grid line of the N-type and the thin grid line of p-type is 50 μm -400 μm, the gross area of the thin grid line of N-type and the thin grid line of p-type
Account for 50% or less the solar cell back face gross area.
Preferably, the P-type electrode includes amorphous silicon passivation layer and amorphous silicon p-type doped layer, transparency conducting layer and seed
Metal.
Preferably, the N-type main gate line and p-type main gate line are copper electroplating layer and the protective layer being located in layers of copper or are silver
The width of pulp layer, N-type main gate line and p-type main gate line is 0.5 ㎜ -1. millimeters.
Preferably, the back side of solar battery sheet be equipped with more N-type main gate lines and p-type main gate line, the N-type main gate line and
P-type main gate line is non-full filled main gate line, wherein the main gate line positioned at solar battery sheet middle section is by two same polarities
Main gate line is combined.
The utility model uses the above design scheme, by the sub- cell piece of solar battery sheet cut growth strip of sheet, son
The width of cell piece is about 1/2 or 1/3 or smaller subdivision of primary battery length, and cutting trace is needed across original entire
Main grid among the cell piece back side；Original cell backside is divided into multi-disc by main gate line, reduces the electrical conduction of thin grid line
Length, while increasing the number of main gate line, battery two sides need to be set as the design of thickness unevenness with intermediate main grid, convenient for the same of welding
When do not cause the decline of front short circuit current again；The ability of the two-sided entering light of solar cell module is maintained, while reducing component
The damage of component function caused by series resistance with cell piece.Main gate line and thin grid line are all the arrangement modes of cross arrangement, with routine
Unique N-type main grid is compared with the back electrode main grid of p-type main grid, and the damage of function caused by series resistance greatly reduces, while cell piece gold
The dosage for belonging to material is greatly reduced, and is suitable for large-scale and is promoted back electrode component volume production, while being greatly improved two-sided
The ability of power generation.
Detailed description of the invention
With reference to the accompanying drawing, the utility model is further described:
Fig. 1 is the schematic cross-sectional view of the utility model main battery piece；
Fig. 2 is the overlooking structure diagram of one main battery piece of the utility model embodiment；
Fig. 3 is the overlooking structure diagram of the main battery piece after the utility model embodiment one is cut；
Fig. 4 is attachment structure schematic diagram after the main battery piece after the utility model embodiment one is cut rotates 180 °；
Fig. 5 is used for the main battery piece of the utility model embodiment and is connected in series the solar cell module to be formed；
Fig. 6 is the main battery piece of the utility model embodiment using the solar cell module in parallel being connected to form；
Fig. 7 is the overlooking structure diagram of two main battery piece of the utility model embodiment；
Fig. 8 is the overlooking structure diagram of the main battery piece after the utility model embodiment two is cut；
Fig. 9 is the main battery piece attachment structure schematic diagram after the utility model embodiment two is cut.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, not
For limiting the present invention.
The utility model provides a kind of structure of back contacts heterojunction solar battery component comprising: multiple series connection
The sub- cell piece of connection, N-type main gate line and p-type the main gate line electrical connection of adjacent subcell piece, wherein between adjacent subcell piece
At least two panels is that main cell piece is split to form from main gate line.
Embodiment one
As shown in Figure 1, shown in Fig. 2, the main battery piece includes: N-type back contact heterojunction solar battery piece 1；It is located at
The passive electrode 2 in solar cell back face and the N-type electrode 3 of cross arrangement and P-type electrode 4, the passive electrode include
The thin grid line 25 of N-type, N-type main gate line 24, the thin grid line 23 of P type and p-type main gate line 22, N-type electrode 3 and the thin grid line 25 of N-type form electricity
Connection, P-type electrode 4 and the thin grid line 23 of p-type form electrical connection, the thin grid line 25 of N-type and the thin grid line 23 of p-type and intersect row in finger-like
Cloth；The thin grid line 25 of N-type and N-type main gate line 24 form electrical connection, and the thin grid line 23 of p-type and p-type main gate line 22 form electrical connection, N-type
Main gate line 24 and p-type main gate line 22 are in cross arrangement.
Wherein, the N-type electrode 3 includes amorphous silicon passivation layer 31, electronics collecting layer 32, transparency conducting layer 33 and kind interest
Belong to layer 34, wherein the amorphous silicon passivation layer 31 is the thin layer of silicon dioxide with a thickness of 0.5~1.5nm, electronics collecting layer 32 is N
The amorphous silicon or polysilicon of type doping.The thin grid line 25 of the N-type and the thin grid line 23 of p-type are copper electroplating layer and are located in layers of copper
Protective layer, the width of the thin grid line 25 of the N-type and the thin grid line 23 of p-type is 50 μm -400 μm, the thin grid line 25 of N-type and the thin grid of p-type
The gross area of line 23 accounts for 50% or less the solar cell back face gross area.
The P-type electrode 4 includes amorphous silicon passivation layer 41 and amorphous silicon p-type doped layer 42, transparency conducting layer 43 and seed
Metal 44.The N-type main gate line 24 and p-type main gate line 22 are copper electroplating layer and the protective layer being located in layers of copper or, N-type main grid
Line 24 and the width of p-type main gate line 22 are 0.5 ㎜ -1. millimeters.
Holoe carrier is collected by P-type electrode 4, is formed by electric current and is gradually passed through P-type electrode 4, the thin grid of p-type metal
Line 23, p-type main gate line 22.N-type electrode 3 and the thin grid line 25 of N-type and N-type metal primary line 24 establish electrical connection.Electronic carrier
It is collected by N-type electrode 3, is formed by electric current and gradually passes through the thin grid line 25 of N-type electrode 3, N-type, N-type metal primary line 24.?
The polarity of both sides can be replaced, i.e. the thin grid line 25 of N-type and N-type main gate line 2 and P-type electrode 4 establishes connection.The thin grid line of metal and
Main gate line can be formed by way of copper plating and surface protective mulch, can also be obtained in such a way that silver paste is printed,
The copper slurry that thawing can also be printed, which is quickly cooled down, forms figure on surface.In order to save the dosage of metal material, main gate line region
It can be the either interrupted of non-full filled, be also possible to the combination of a plurality of thinner main gate line.In order to guarantee post-order process
The convenience of cutting, the main grid among the cell piece back side can be combined by two main grids, at regular intervals between the two
(50 to 800 microns), cutting trace is by this spacing, convenient for two sub- cell pieces of separation.Within this spacing, can also have
The short thin grid vertical with two part main grids.The electrical connection for guaranteeing two part main grids under the premise of not influencing cutting, is convenient for
The sorting of battery is tested.
As shown in Figure 3, Figure 4, the intermediate main grid along main solar battery sheet 1 cuts to form the solar battery that two panels is divided equally
Piece 11,12, sub- cell piece 12 are formed with sub- cell piece 11 after rotating 180 ° and are connected in series.The N-type main gate line of sub- cell piece 11,12
It is established and is electrically connected by the p-type main gate line of welding 5 and the sub- cell piece of upper level or next stage.With the cell piece of traditional double contact
Difference, the back side main gate line of back contact battery can cause certain back side light source to be occluded, and cause the decline of positive planar survey electrical property.
In order to solve this problem, full wafer battery two sides and intermediate main grid need the design of thickness unevenness, while convenient for welding again
The decline of front short circuit current is not caused.The welding of connection adjacent subcell piece can also have design or even the portion of thickness unevenness
Aperture or fluting among point, while convenient for welding, and play the role of stress release.In addition, two adjacent subcell pieces, it can
To be connected by multistage welding.
As shown in figure 5, can be by original simple concatenated electricity by the sub- cell piece that cutting method forms two equal parts
Connection method forms component, but will form electric current and halve and the result of voltage multiplication.If necessary and traditional components matching is electric
Stream, can be first to form two sub-components in a manner of such, and voltage and current is close, and then two sub- assembly modules are in parallel,
Its component after merging and non-cutting mode component achieve the purpose that currents match.As shown in fig. 6, another can also be passed through
Mode, two adjacent tandems are in parallel, it equally can achieve the purpose with non-cutting mode component currents match.
Embodiment two
As shown in Fig. 7, Fig. 8, Fig. 9, what is different from the first embodiment is that main battery piece 1 is respectively provided with four masters in the present embodiment
Grid line, i.e. two p-type main gate lines 22 and two N-type main gate lines 24, can be with by the original main battery piece of intermediate two main gate lines
Trisection forms sub- cell piece 13,14,15, after cutting adjacent sub- cell piece N-type main gate line by welding 5 and upper level or
The p-type main gate line of the sub- cell piece of next stage establishes electrical connection.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. a kind of structure of back contacts heterojunction solar battery component characterized by comprising
The sub- cell piece of multiple series connections, N-type main gate line and p-type the main gate line electrical connection of adjacent subcell piece, wherein adjacent
At least two panels is that main cell piece is split to form from main gate line between sub- cell piece, wherein the main battery piece includes:
N-type back contact heterojunction solar battery piece；
It is located at the passive electrode in solar cell back face and the N-type electrode of cross arrangement and P-type electrode, the collection electricity
Pole includes the thin grid line of N-type, N-type main gate line, the thin grid line of p-type and p-type main gate line, and the N-type electrode and the thin grid line formation of N-type are electrically connected
It connects, P-type electrode and the thin grid line of p-type form electrical connection or P-type electrode and the thin grid line formation electrical connection of N-type, N-type electrode and p-type
Thin grid line forms electrical connection, wherein the thin grid line of N-type and the thin grid line of p-type are in finger-like cross arrangement；The thin grid line of N-type and N-type main gate line
Electrical connection is formed, the thin grid line of p-type and p-type main gate line form electrical connection, and N-type main gate line and p-type main gate line are in cross arrangement.
2. the structure of back contacts heterojunction solar battery component according to claim 1, it is characterised in that: adjacent son electricity
Pond piece is that main cell piece is divided equally along intermediate main gate line and formed, respectively after sub- cell piece wherein after a piece of 180 ° of rotation counterclockwise
It is connected in series with another sub- cell piece.
3. the structure of back contacts heterojunction solar battery component according to claim 1, it is characterised in that: described adjacent
Pass through welding or the formation electrical contact of conductive tape bonding between sub- cell piece.
4. the structure of back contacts heterojunction solar battery component according to claim 3, it is characterised in that: described adjacent
It is connected between sub- cell piece by least one welding, the welding is the welding of thickness unevenness, and welding is equipped with aperture or opens
Slot.
5. the structure of back contacts heterojunction solar battery component according to claim 4, it is characterised in that: the welding
Width for copper, silver, indium or tin, welding is 0.8 ㎜ -3 ㎜, is highly 50 μm -300 μm.
6. the structure of back contacts heterojunction solar battery component according to claim 1, it is characterised in that: the N-type
Electrode includes amorphous silicon passivation layer, electronics collecting layer, transparency conducting layer and seed metal layer or barrier layer, wherein the amorphous
Silicon passivation layer is the thin layer of silicon dioxide with a thickness of 0.5~1.5nm, and electronics collecting layer is the amorphous silicon or polysilicon of n-type doping.
7. the structure of back contacts heterojunction solar battery component according to claim 1, it is characterised in that: the N-type
Thin grid line and the thin grid line of p-type be copper electroplating layer and the protective layer being located in layers of copper or be silver slurry layer, the thin grid line of the N-type and P
The width of the thin grid line of type is 50 μm -400 μm, and the gross area of the thin grid line of N-type and the thin grid line of p-type accounts for the total face in solar cell back face
50% or less long-pending.
8. the structure of back contacts heterojunction solar battery component according to claim 1, it is characterised in that: the p-type
Electrode includes amorphous silicon passivation layer and amorphous silicon p-type doped layer, transparency conducting layer and seed metal.
9. the structure of back contacts heterojunction solar battery component according to claim 1, it is characterised in that: the N-type
Main gate line and p-type main gate line are copper electroplating layer and the protective layer being located in layers of copper or are silver slurry layer, N-type main gate line and p-type master
The width of grid line is 0.5 ㎜ -1. millimeters.
10. the structure of back contacts heterojunction solar battery component according to claim 1, it is characterised in that: solar energy
The back side of cell piece is equipped with more N-type main gate lines and p-type main gate line, and the N-type main gate line and p-type main gate line are non-full filled
Main gate line, wherein the main gate line positioned at solar battery sheet middle section is combined by two same polarity main gate lines.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821499655.8U CN209000938U (en) | 2018-09-13 | 2018-09-13 | A kind of structure of back contacts heterojunction solar battery component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821499655.8U CN209000938U (en) | 2018-09-13 | 2018-09-13 | A kind of structure of back contacts heterojunction solar battery component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209000938U true CN209000938U (en) | 2019-06-18 |
Family
ID=66801295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821499655.8U Active CN209000938U (en) | 2018-09-13 | 2018-09-13 | A kind of structure of back contacts heterojunction solar battery component |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209000938U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111564514A (en) * | 2020-04-29 | 2020-08-21 | 晋能清洁能源科技股份公司 | Double-layer combined double-sided assembly for P/N type battery piece |
| CN112838141A (en) * | 2019-11-25 | 2021-05-25 | 福建金石能源有限公司 | Strip-shaped flexible solar cell and preparation method of module thereof |
| CN113745354A (en) * | 2021-08-31 | 2021-12-03 | 泰州中来光电科技有限公司 | Back contact solar cell, assembly and system |
| CN115207134A (en) * | 2022-07-01 | 2022-10-18 | 中国华能集团清洁能源技术研究院有限公司 | Back contact heterojunction battery piece, photovoltaic module and manufacturing method of back contact heterojunction battery piece |
-
2018
- 2018-09-13 CN CN201821499655.8U patent/CN209000938U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112838141A (en) * | 2019-11-25 | 2021-05-25 | 福建金石能源有限公司 | Strip-shaped flexible solar cell and preparation method of module thereof |
| CN111564514A (en) * | 2020-04-29 | 2020-08-21 | 晋能清洁能源科技股份公司 | Double-layer combined double-sided assembly for P/N type battery piece |
| CN111564514B (en) * | 2020-04-29 | 2022-09-06 | 晋能清洁能源科技股份公司 | Double-layer combined double-sided assembly for P/N type battery piece |
| CN113745354A (en) * | 2021-08-31 | 2021-12-03 | 泰州中来光电科技有限公司 | Back contact solar cell, assembly and system |
| CN113745354B (en) * | 2021-08-31 | 2023-05-12 | 泰州中来光电科技有限公司 | Back contact solar cell, assembly and system |
| CN115207134A (en) * | 2022-07-01 | 2022-10-18 | 中国华能集团清洁能源技术研究院有限公司 | Back contact heterojunction battery piece, photovoltaic module and manufacturing method of back contact heterojunction battery piece |
| CN115207134B (en) * | 2022-07-01 | 2024-01-26 | 中国华能集团清洁能源技术研究院有限公司 | Back contact heterojunction battery piece, photovoltaic module and manufacturing method of back contact heterojunction battery piece |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN209000938U (en) | A kind of structure of back contacts heterojunction solar battery component | |
| JP2018500775A (en) | Non-main grid high-efficiency back contact solar cell, assembly and manufacturing process thereof | |
| JP2017529704A (en) | Main gate-free and highly efficient back contact solar cell module, assembly and manufacturing process | |
| KR20130092693A (en) | Solar cell | |
| EP3588585B1 (en) | P-type perc double-sided solar cell, assembly thereof, system thereof and preparation method therefor | |
| CN105529373B (en) | A kind of front electrode of crystal silicon solar batteries | |
| KR20100102254A (en) | Solar cell and solar cell module | |
| EP3591715B1 (en) | Method of preparing a bifacial p-type perc solar cell | |
| WO2022179747A2 (en) | Electrode structure of back contact cell, back contact cell, back contact cell module, and back contact cell system | |
| CN106876497B (en) | Preparation method of P-type PERC double-sided solar cell | |
| WO2018157824A1 (en) | P-type perc double-sided solar cell, assembly thereof, system thereof and preparation method therefor | |
| CN106887476B (en) | P-type PERC double-sided solar cell, and assembly, system and preparation method thereof | |
| CN105679850A (en) | Crystalline silicon solar cell | |
| US20230395734A1 (en) | Busbar-free interdigitated back contact solar cell and interdigitated back contact solar cell module | |
| CN207753025U (en) | Portrait type photovoltaic laminate component | |
| CN208767310U (en) | A kind of solar energy back contact battery component can be used for generating electricity on two sides | |
| KR20120116120A (en) | Solar cell module and interconnector used in solar cell module | |
| CN105702755B (en) | A kind of front electrode of crystal silicon solar batteries | |
| WO2018157823A1 (en) | P-type perc double-sided solar cell, assembly thereof, system thereof and preparation method therefor | |
| CN106876486B (en) | String formation connection structure, component and the method for P-type crystal silicon back contacts double-side cell | |
| CN108461558A (en) | Avoid generating the two-sided photovoltaic stacked wafer moudle of hot spot effect | |
| CN105552144B (en) | A kind of front electrode of crystal silicon solar batteries | |
| CN105529374A (en) | Positive electrode of crystalline silicon solar cell | |
| CN105552145A (en) | Crystalline silicon solar cell | |
| CN107564974B (en) | Cell, cell matrix, solar cell and preparation method of cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |