CN105529373B - A kind of front electrode of crystal silicon solar batteries - Google Patents
A kind of front electrode of crystal silicon solar batteries Download PDFInfo
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- CN105529373B CN105529373B CN201610058600.2A CN201610058600A CN105529373B CN 105529373 B CN105529373 B CN 105529373B CN 201610058600 A CN201610058600 A CN 201610058600A CN 105529373 B CN105529373 B CN 105529373B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 23
- 239000010703 silicon Substances 0.000 title claims abstract description 23
- 239000013078 crystal Substances 0.000 title claims abstract description 19
- 229910000679 solder Inorganic materials 0.000 claims abstract description 66
- 238000003475 lamination Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 19
- 238000007639 printing Methods 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 description 19
- 230000008569 process Effects 0.000 description 7
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 235000008216 herbs Nutrition 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of front electrode of crystal silicon solar batteries, a plurality of secondary grid line including spaced arrangement in the first direction, the front electrode also includes the thin grid line of M bars of spaced arrangement in a second direction, the thin grid line is electrically connected with the secondary grid line, the width of the thin grid line is 0.10~0.25mm, wherein, M=10~20；Wherein, spaced N number of solder contacts are additionally provided with each thin grid line, the solder contacts lamination is arranged on the thin grid line and is electrically connected with the thin grid line, the solder contacts are shaped to two or more in square, circular and ellipse, the length range of the short side of the square length of side, circular diameter or ellipse is 0.2~1mm respectively, and the length of the short side of the square length of side, circular diameter or ellipse is respectively greater than the width of the thin grid line；Wherein, N=5~15.The electrode structure at right side, which can reach, not only to have been reduced shading-area but also had ensured the smooth derived purpose of electric current.
Description
Technical field
The present invention relates to technical field of solar batteries, and in particular to a kind of front electrode of crystal silicon solar batteries.
Background technology
Crystal silicon solar batteries are a kind of electronic components that solar energy can be transformed into electric energy.Crystalline silicon class is too
The preparation of positive energy battery is typically by processes such as making herbs into wool, diffusion, plated film, silk-screen printing, sintering.Making herbs into wool is divided into monocrystalline, polycrystalline system
Suede, single crystal battery are to form pyramid matte in silicon chip surface using the method for alkali making herbs into wool, and polycrystalline battery uses the side of acid etch
Method forms pit matte in silicon chip surface, and the matte of silicon face can increase absorption of the sunshine in battery surface, reach sunken light
Effect；Diffusing procedure is to be internally formed P-N junction to silicon chip by way of thermal diffusion, so when there is light irradiation, inside silicon chip
Can forms voltage, is the basis that solar cell generates electricity；Coating process is to reduce minority carrier in battery surface
It is compound, the conversion efficiency of crystal silicon solar cell sheet can be improved；Silkscreen process is exactly to make the electricity of solar cell
Pole, so when light irradiation, can exports electric current.Silk-screen printing is most widely used one in prepared by present crystal silicon battery
Then kind technique, process sequence carry out the printing and drying of Al-BSF, finally carried out first to carry out backplate printing and drying
The printing of front electrode, drying, are being sintered, and allow preparing silver paste that electrode uses and battery forms contact.
In the front electrode of crystal silicon solar batteries, electrode structure generally includes crisscross main gate line and secondary grid line,
Main gate line is electrical connected with secondary grid line.When there is illumination, cell piece will produce electric current, and electric current passes through internal emitter flow chart
Face electrode pair grid line, collected via secondary grid line and then be flowed in battery main gate line and exported.Electric current is collected in secondary grid line
During can produce loss, it is this that we are known as the power loss of resistance.Battery main gate line and secondary grid line be in battery by
Smooth surface, a part of light irradiation will necessarily be so blocked in battery surface, so as to reduce the effective area of shining light of battery, this part
We term it optical loss for loss.Whether p-type or N-type cell, as long as battery front side has electrode structure, it is necessary to examine
Consider continuing to optimize for electrode structure, not only reduce shading-area to reach but also ensure the smooth derived purpose of electric current.
In existing electrode structure at right side, the quantity of main gate line is usually 3, and its width is 1.5mm or so；Secondary grid line
Quantity is usually 80~100, and its width is 40 μm or so.The wider width of main gate line so that the weldering of front electrode and battery
Band can weld well, but shading-area is also larger.In recent years, in order to reduce the shading-area of front electrode, carry in the industry
A kind of electrode structure at right side of no main grid is gone out, mainly 3 main gate lines in electrode structure at right side is removed, only retain secondary grid
Line, after battery completes, directly welded using superfine cylindrical welding with secondary grid line, by the direct derived current of welding.
Superfine welding is with the welding process of secondary grid line, rosin joint or nothing are caused because the width of secondary grid line is smaller, secondary grid line is excessively low
The abnormal conditions of method welding, make the power of photovoltaic module reduce.
The content of the invention
In view of the shortcomings of the prior art, the invention provides a kind of front electrode of crystal silicon solar batteries, this is just
Face electrode structure, which can reach, not only to have been reduced shading-area but also had ensured the smooth derived purpose of electric current.
To achieve these goals, present invention employs following technical scheme：
A kind of front electrode of crystal silicon solar batteries, including a plurality of secondary grid line of spaced arrangement in the first direction,
Wherein, the front electrode also includes the thin grid line of M bars of spaced arrangement in a second direction, the thin grid line and the secondary grid
Line is electrically connected with, and the width of the thin grid line is 0.10~0.25mm；Wherein, M=10~20；Wherein, on each thin grid line also
Be provided with spaced N number of solder contacts, the solder contacts lamination be arranged on the thin grid line and with the thin grid
Line is electrically connected with, and the solder contacts are shaped to two or more in square, circular and ellipse, the square side
Long, circular diameter or the length range of the short side of ellipse are 0.2~1mm respectively, and the square length of side, circular
The length of the short side of diameter or ellipse is respectively greater than the width of the thin grid line；Wherein, N=5~15.
Preferably, the solder contacts are formed on the thin grid line by secondary printing technique.
Preferably, a plurality of secondary grid line equidistantly arranges in the first direction, between the thin grid line of M bars waits in a second direction
Away from arrangement, the second direction is mutually perpendicular to the first direction.
Preferably, the quantity of the secondary grid line is 80~100.
Preferably, the solder contacts are arranged at the position that the thin grid line intersects with the secondary grid line.
Preferably, equidistantly arranged on length direction of the N number of solder contacts on each thin grid line along the thin grid line.
Preferably, the array distribution that all solder contacts in the front electrode arrange in N rows × M.
Preferably, on each thin grid line, solder contacts alternate intervals of different shapes are set.
Preferably, the width of the thin grid line is 0.2mm；The shape of the solder contacts includes square and circular, institute
The length of side for stating square is 0.8mm, circular a diameter of 0.8mm；Wherein, M=15, N=10.
On the identical and adjacent two thin grid line of the shapes of the solder contacts being preferably located on one thin grid line
The shape of solder contacts is different.
Compared to prior art, in the front electrode of crystal silicon solar batteries provided in an embodiment of the present invention, usage quantity
More smaller thin grid lines of width replace main gate line of the prior art, and generally shading-area is smaller, reduces light loss, and
And greater number of thin grid line is evenly distributed on solar battery front side so that the electric current that secondary grid line is collected can be more successfully
Export, reduces power attenuation；In addition, thin grid line superimposed layer is provided with larger square, the circular or oval welding of area
Contact, the contact area of pad and the height of pad are added, when welding welding, less welding and welding of battery film
The problem of abnormal.
Brief description of the drawings
Fig. 1 is the structural representation of front electrode of solar battery provided in an embodiment of the present invention；
Fig. 2 is the enlarged diagram of part A in Fig. 1；
Fig. 3 is the graphical representation of exemplary of solder contacts oval in the embodiment of the present invention.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the accompanying drawings to the specific reality of the present invention
The mode of applying is described in detail.The example of these preferred embodiments is illustrated in the accompanying drawings.Shown in accompanying drawing and according to
What the embodiments of the present invention of accompanying drawing description were merely exemplary, and the present invention is not limited to these embodiments.
Here, it should also be noted that, in order to avoid having obscured the present invention because of unnecessary details, in the accompanying drawings only
Show and according to the solution of the present invention closely related structure and/or processing step, and eliminate little with relation of the present invention
Other details.
Refering to Fig. 1 and Fig. 2, a kind of front electrode of crystal silicon solar batteries is present embodiments provided, as shown in figure 1, should
Front electrode includes (Y-direction in such as Fig. 1) spaced and arranged in parallel a plurality of secondary grid line 10 in the first direction, along second
The spaced and arranged in parallel a plurality of thin grid line 20 in direction (X-direction in such as Fig. 1), a plurality of secondary grid line 10 with it is described more
The thin grid line 20 of bar is electrically connected with each other.Wherein, secondary grid line 10 is mainly used in collecting photogenerated current caused by solar cell, thin grid
Line 20 is used to the electric current that secondary grid line 10 is collected collecting output.Further, it is additionally provided with each thin grid line 20 spaced
Multiple solder contacts 30, the lamination of solder contacts 30 is arranged on the thin grid line 20 and electrical with the thin grid line 20
Connection, the shape of the solder contacts 30 is including circular and square.The solder contacts 30 are mainly used for having made in battery
Cheng Houyu weldings are welded to connect.Specific in the present embodiment, on each thin grid line 20, circular and square solder contacts 30 are handed over
For interval setting.Certainly, in some other embodiments, solder contacts 30 of different shapes can also be according to arbitrary suitable
Sequence arranges.
Wherein, the quantity of secondary grid line 10 can be selected in the range of 80~100, and its width can be selected 30~50
In the range of μm.The quantity M of thin grid line 20 can be selected in the range of 10~20, and its width D can select 0.10~
In the range of 0.25mm.The quantity N of the solder contacts 30 set on each thin grid line 20 can be selected in the range of 5~15,
The diameter R of circular solder contacts 30 can be selected in the range of 0.2~1mm, and to meet the diameter R of solder contacts 30
More than the width of thin grid line 20, the length of side L of square solder contacts 30 can be selected in the range of 0.2~1mm, and to be expired
The length of side of sufficient solder contacts 30 is more than the width of thin grid line 20.In the present embodiment, the quantity of secondary grid line 10 is 90, secondary grid line
10 width is 40 μm；The quantity M=15 of thin grid line 20, the width D of thin grid line 20 is 0.2mm；Weldering on each thin grid line 20
The quantity N=10 of contact point 30, the diameter R of circular solder contacts 30 is 0.8mm, and square solder contacts 30 are specially pros
Shape, its length of side L are 0.8mm.
Wherein, the lamination of solder contacts 30 is arranged on the thin grid line 20.Specifically, electrode structure at right side is being prepared
When, secondary grid line 10 and thin grid line 20 are prepared by one-step print technique first, then again by secondary printing technique in institute
State and prepare solder contacts 30 on thin grid line 20.
In the present embodiment, as shown in figure 1, a plurality of secondary grid line 10 is in the first direction between (Y-direction in such as Fig. 1)
Away from arrangement, the thin grid line 20 of M bars in a second direction (X-direction in such as Fig. 1) equidistantly arrange, the second direction with it is described
First direction is mutually perpendicular to.Further, the solder contacts 30 are arranged at the thin grid line 20 and intersected with the secondary grid line 10
Position, also, equidistantly arranged on length direction of the N number of solder contacts 30 on each thin grid line 20 along the thin grid line 20
Row.
More specifically, in the present embodiment, as shown in figure 1, between each carefully arrangement of N number of solder contacts 30 on grid line 20
Away from all equal, therefore, in whole electrode structure at right side, all solder contacts 30 in N rows × M row array distribution.Specifically,
Because the circular and square alternate intervals of solder contacts 30 on each thin grid line 20 are set, in the solder contacts 30 of N rows × M row
In, the circular solder contacts 30 of odd number behavior, the square solder contacts 30 of even number behavior；It is of course also possible to it is arranged to even number line
For the solder contacts 30 of circle, the square solder contacts 30 of odd number behavior.
Further, in some other embodiments or the welding on the one thin grid line 20 is set to touch
The shape of solder contacts 30 on the identical and adjacent two thin grid line 20 of shape of point 30 is different.Specifically, can be with
The circle that is shaped as of solder contacts 30 on first thin grid line 20 is set, the solder contacts 30 on the thin grid line 20 of Article 2 are set
Be shaped as square, i.e., in the solder contacts 30 of N rows × M row, odd number is classified as the solder contacts 30 of circle, and even number is classified as square
Solder contacts 30；It is of course also possible to be arranged to the solder contacts 30 that even number is classified as circle, odd number is classified as square solder contacts
30。
The front electrode for the crystal silicon solar batteries that above example provides can be effectively reduced shading-area.With the sun
Exemplified by the size of energy battery front side is 156mm × 156mm square, according to the front electrode and the present invention of existing three main grid
The electrode structure at right side that embodiment provides calculates shading-area respectively：
1st, the electrode structure at right side of existing three main grid.The knot of the wide main gate line of conventional three 1.5mm, 90 40 μm of secondary grid lines
In structure, main gate line may be designed as hollow out form, and main grid all areas can still burn-on when reducing the silver paste that printing uses, but welding
The welding of 1.5mm width or so and keep the sun off.Therefore it is 1.5mm × 3 × 156mm=to the shielded area of sunlight at main grid
702mm2；Secondary grid line and 4 frame shielded areas are 0.04mm × (90+2) × (153.5mm-1.5mm × 3)+2 × 153.5mm
× 0.04mm=560.6mm2.Total shielded area of conventional three main grid front electrodes is 1262.6mm2。
2nd, electrode structure at right side provided in an embodiment of the present invention.According to example specifically, the quantity of secondary grid line is 90,
Its width is 40 μm；The quantity of thin grid line is 15, and its width is 0.2mm；The quantity of solder contacts on each thin grid line is
10, the shape half of solder contacts is circle, and its diameter R is 0.8mm, and second half is square, and its length of side is 0.8mm.Then：
A, 15 thin grid line is to the shielded area of sunlight：0.2mm × 15 × 156mm=468mm2；
B, secondary grid line and 4 frames to sunlight block for：0.04mm×(90+2)×(153.5mm-0.2mm×10)+
0.04mm × 2 × 153.5mm=566.12mm2；
C, in addition to thin grid line 0.8mm diameters circular pattern to sunlight block for：
[π×0.42mm2-(0.8mm-0.2mm)
×0.04mm-π×0.42mm2× 29 ° × 2-0.2 × 0.4 × sin14.5 of 360 ° of ÷] × 75=28.32mm2；
D, in addition to thin grid line the 0.8mm length of sides square pattern to sunlight block for：(0.8mm-0.2mm)×0.8mm
× 75=36mm2；
Total shielded area is above：468mm2+566.12mm2+28.32mm2+36mm2=1098.44mm2.The present invention is implemented
Compared to the front electrode of existing three main grid, the shading-area of its reduction is the front electrode that example provides：1262.6mm2-
1098.44mm2=164.16mm2。
In some other embodiments, with reference to front electrode as provided above, wherein can also be by solder contacts 30
It is designed as ellipse.That is, the shape of solder contacts 30 includes ellipse and circular, or including oval and square, may be used also
Be include simultaneously it is oval and circular and square, it is oval and circular and square in each carefully alternate intervals on grid line 20
Set and either set in any order.Specifically, oval solder contacts 30 as shown in Figure 3, oval welding
Contact 30 is also disposed on the position that the thin grid line 20 intersects with the secondary grid line 10.The long side of ellipse is prolonged with thin grid line 20
Stretch that direction is identical, oval short side is identical with the secondary bearing of trend of grid line 10.Wherein, the length of oval short side can select
In the range of 0.2~1mm, and to meet that the length L1 of the short side of solder contacts 30 is more than the width D of thin grid line 20.
In summary, in the front electrode for the crystal silicon solar batteries that above example provides, the more width of usage quantity
Smaller thin grid line replaces main gate line of the prior art, and generally shading-area is smaller, reduces light loss, and most
The thin grid line of amount is evenly distributed on solar battery front side so that the electric current that secondary grid line is collected can be exported more successfully, be dropped
Low power attenuation；In addition, being provided with the larger square circular or oval solder contacts of area in thin grid line superimposed layer, increase
The contact area of pad and the height of pad are added, when welding welding, less welding and welding of battery film are abnormal
Problem.
It should be noted that herein, such as first and second or the like relational terms are used merely to a reality
Body or operation make a distinction with another entity or operation, and not necessarily require or imply and deposited between these entities or operation
In any this actual relation or order.Moreover, term " comprising ", "comprising" or its any other variant are intended to
Nonexcludability includes, so that process, method, article or equipment including a series of elements not only will including those
Element, but also the other element including being not expressly set out, or it is this process, method, article or equipment also to include
Intrinsic key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that
Other identical element also be present in process, method, article or equipment including the key element.
Described above is only the embodiment of the application, it is noted that for the ordinary skill people of the art
For member, on the premise of the application principle is not departed from, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as the protection domain of the application.
Claims (4)
1. a kind of front electrode of crystal silicon solar batteries, including a plurality of secondary grid line of spaced arrangement in the first direction, its
It is characterised by,
The front electrode also includes the thin grid line of M bars of spaced arrangement in a second direction, the thin grid line and the secondary grid
Line is electrically connected with, and the width of the thin grid line is 0.10~0.25mm；Wherein, M=10~20；
Wherein, spaced N number of solder contacts are additionally provided with each thin grid line, the solder contacts lamination is arranged on described
It is electrically connected with thin grid line and with the thin grid line, the solder contacts are shaped in square, circular and ellipse
It is two or more, the length range of the short side of the square length of side, circular diameter or ellipse is 0.2~1mm respectively, and
And the length of the short side of the square length of side, circular diameter or ellipse is respectively greater than the width of the thin grid line；Wherein,
N=5~15；
Wherein, the solder contacts are formed on the thin grid line by secondary printing technique, and the solder contacts are arranged at institute
State the position that thin grid line intersects with the secondary grid line；
Wherein, equidistantly arranged on length direction of the N number of solder contacts on each thin grid line along the thin grid line, the front
The array distribution that all solder contacts in electrode arrange in N rows × M；
Wherein, on each thin grid line, solder contacts alternate intervals of different shapes are set；Either, on one thin grid line
Solder contacts the identical and adjacent two thin grid line of shape on solder contacts shape it is different.
2. the front electrode of crystal silicon solar batteries according to claim 1, it is characterised in that a plurality of secondary grid line edge
First direction equidistantly arranges, and the thin grid line of M bars equidistantly arranges in a second direction, the second direction and the first party
To being mutually perpendicular to.
3. the front electrode of crystal silicon solar batteries according to claim 2, it is characterised in that the quantity of the secondary grid line
For 80~100.
4. the front electrode of crystal silicon solar batteries according to claim 1, it is characterised in that the width of the thin grid line
For 0.2mm；The shape of the solder contacts includes square and circle, and the square length of side is 0.8mm, described circular
A diameter of 0.8mm；Wherein, M=15, N=10.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610058600.2A CN105529373B (en) | 2016-01-28 | 2016-01-28 | A kind of front electrode of crystal silicon solar batteries |
| PCT/CN2016/092194 WO2017128668A1 (en) | 2016-01-28 | 2016-07-29 | Front electrode of crystalline silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610058600.2A CN105529373B (en) | 2016-01-28 | 2016-01-28 | A kind of front electrode of crystal silicon solar batteries |
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| CN105529373A CN105529373A (en) | 2016-04-27 |
| CN105529373B true CN105529373B (en) | 2018-01-16 |
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| WO (1) | WO2017128668A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105529373B (en) * | 2016-01-28 | 2018-01-16 | 黄河水电光伏产业技术有限公司 | A kind of front electrode of crystal silicon solar batteries |
| CN105552144B (en) * | 2016-01-28 | 2018-02-23 | 黄河水电光伏产业技术有限公司 | A kind of front electrode of crystal silicon solar batteries |
| CN107170844A (en) * | 2017-07-10 | 2017-09-15 | 苏州腾晖光伏技术有限公司 | A kind of solar battery sheet and photovoltaic module without main grid |
| CN108010970A (en) * | 2017-11-17 | 2018-05-08 | 南通苏民新能源科技有限公司 | A kind of interdigital back contacts crystalline silicon solar battery electrode and preparation method thereof |
| CN108481892A (en) * | 2018-04-11 | 2018-09-04 | 张家港国龙光伏科技有限公司 | A kind of secondary printing is knotted version without net |
| CN109873054B (en) * | 2019-04-04 | 2024-06-07 | 乐山新天源太阳能科技有限公司 | Production line of black silicon solar cells |
| CN114122159A (en) * | 2021-07-08 | 2022-03-01 | 天合光能股份有限公司 | Battery piece |
| CN113725307B (en) | 2021-08-27 | 2024-02-06 | 上海晶科绿能企业管理有限公司 | Photovoltaic cell, cell assembly and preparation process |
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|---|---|---|---|---|
| US20100000602A1 (en) * | 2007-12-11 | 2010-01-07 | Evergreen Solar, Inc. | Photovoltaic Cell with Efficient Finger and Tab Layout |
| KR100955496B1 (en) * | 2009-07-09 | 2010-04-30 | 주식회사 동진쎄미켐 | Conductive composition for forming electrode of solar cell |
| CN102800713A (en) * | 2012-08-27 | 2012-11-28 | 英利能源（中国）有限公司 | Solar cell sheet and solar cell |
| CN203250754U (en) * | 2013-05-24 | 2013-10-23 | 浙江昱辉阳光能源江苏有限公司 | Front grid line of solar cell and solar cell |
| CN204332976U (en) * | 2015-01-27 | 2015-05-13 | 苏州阿特斯阳光电力科技有限公司 | A kind of electrode structure at right side of solar cell |
| CN105529373B (en) * | 2016-01-28 | 2018-01-16 | 黄河水电光伏产业技术有限公司 | A kind of front electrode of crystal silicon solar batteries |
-
2016
- 2016-01-28 CN CN201610058600.2A patent/CN105529373B/en active Active
- 2016-07-29 WO PCT/CN2016/092194 patent/WO2017128668A1/en active Application Filing
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| Publication number | Publication date |
|---|---|
| WO2017128668A1 (en) | 2017-08-03 |
| CN105529373A (en) | 2016-04-27 |
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Effective date of registration: 20220822 Address after: 810008 No. 43, Wusi West Road, Chengxi District, Xining City, Qinghai Province Patentee after: Huanghe Hydropower Development Co., Ltd. Patentee after: State Power Investment Group Qinghai Photovoltaic Industry Innovation Center Co.,Ltd. Patentee after: YELLOW RIVER HYDROPOWER PHOTOVOLTAIC INDUSTRY TECHNOLOGY Co.,Ltd. Address before: 810007 No. 20, Kunlun East Road, Xining City, Qinghai Province Patentee before: YELLOW RIVER HYDROPOWER PHOTOVOLTAIC INDUSTRY TECHNOLOGY Co.,Ltd. |