CN203192803U - Crystalline silicon solar cell - Google Patents
Crystalline silicon solar cell Download PDFInfo
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- CN203192803U CN203192803U CN 201320146853 CN201320146853U CN203192803U CN 203192803 U CN203192803 U CN 203192803U CN 201320146853 CN201320146853 CN 201320146853 CN 201320146853 U CN201320146853 U CN 201320146853U CN 203192803 U CN203192803 U CN 203192803U
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Abstract
The utility model discloses a crystalline silicon solar cell, including cell pieces, positive electrodes and fine grids located at a light receiving surface of the solar cell, and a back electric field and a back electrode located at the surface back to the light. Each positive electrode comprises an upper segment and a lower segment with a gap between the two; each fine grid comprises a left fine grid and a right fine grid with a gap between the two; from the fine grids near the edges of cell pieces, adjacent left fine grids are connected at the disconnections, and adjacent right grids are connected at the disconnections; the axes of the cell pieces perpendicular to the back electrode on the back electric field are provided with silicon leakage bands; each back electrode breaks at a silicon leakage band to form an upper back electrode segment and a lower back electrode segment, which are symmetrically distributed with a silicon leakage band as axis; and the central axes of the cell pieces parallel to the back electrodes on the back electric field are also provided with silicon leakage bands. The cell can reduce the coverage of electrode metal, can be easily cut into 1/4 of the cell and prevent contamination of metal on the cutting section during the cutting process, and does not affect the performances of the cell or components.
Description
Technical field
The invention belongs to area of solar cell, be specifically related to a kind of crystal silicon solar energy battery.
Background technology
In crystal silicon solar silicon chip and battery manufacturing, silicon chip is by making herbs into wool, diffusion, edge isolation, the evaporation antireflective film, electrode is made, emphasis processes such as sintering metalization are made into battery, wherein electrode is made and is adopted method for printing screen usually, the battery sheet of making as shown in fig. 1, at the positive grid of the front of battery sheet 1 (being sensitive surface) grating shape, and cooperate the 3 parallel series connection of some positive electrodes so that interconnect with welding between the battery, wherein sensitive surface be provided with positive electrode 3 and with many thin grid 2 of parallel equally distributed even number bar of described positive electrode 3 perpendicular settings, wherein positive electrode 3 also is many, many positive electrode 3 parallels and the identical even setting of spacing, axis with the battery sheet that parallels with it is that symmetry axis is symmetrically distributed, and the axis with the battery sheet perpendicular with it is that symmetry axis is symmetrically distributed, back electrode 5 also is many, many back electrode 5 parallels and the identical even setting of spacing, axis with the battery sheet that parallels with it is that symmetry axis is symmetrically distributed, and the perpendicular symmetrical distribution in axis with the battery sheet perpendicular with it, back electrode 5 can be identical in the position of battery sheet sensitive surface with positive electrode 3 in the position of battery shady face, also can be different, preferably identical, the shape of the shape of back electrode 5 and positive electrode 3 can be identical with size, also can be different, preferably identical, shady face adopts the aluminium paste printing that covers whole to form back of the body electric field 4 and embed some the back electrodes parallel with positive electrode 5, back electrode is used for interconnecting with welding between the battery equally, every positive electrode, the adjacent aluminium back of the body of each end distance of back electrode and thin grid field edge distance is identical, and this is the traditional structure of solar cell.
But at present, different applied environments is all different for power, the size requirements of battery and assembly, portable, low profile photovoltaic electricity generation system more increases requirements such as small size, high voltage, high power for assembly, so the structure to crystal silicon solar energy battery has proposed new challenge, improve performance to reducing the battery cost, the demand of crystal silicon solar energy battery of needs that can take into account normal assembly and compact package again is urgent day by day.
Summary of the invention
The purpose of this utility model is to provide a kind of crystal silicon solar energy battery, this crystal silicon solar energy battery presents 1/4 axially symmetric structure, a slice battery can be cut into 4 parts and have identical performance, structure, the battery of performance and size, positive electrode on the while battery sheet, arranging of back electrode and thin gap, grid cut place (being gap) can be given cutting, the scribing slot milling, avoid metal pair section formation secondary pollution under machinery or hot conditions, can also reduce simultaneously the metallization area of battery surface, reduce metal consumption, increase the light-receiving area of battery, can reduce the battery cost and improve performance, can take into account the crystal silicon solar energy battery that normal assembly and compact package need again.
Above-mentioned purpose of the present utility model is achieved by the following technical solution: a kind of crystal silicon solar energy battery, comprise the battery sheet, be located at the positive electrode on the battery sheet sensitive surface and parallel the thin grid of equally distributed even number bar with many of the perpendicular setting of described positive electrode, and be located at back of the body electric field and back electrode on the cell back light face, it is characterized in that: described positive electrode is made up of last positive electrode section and following positive electrode section, described going up between positive electrode section and the following positive electrode section left the gap, described axis of going up positive electrode section and its perpendicular battery sheet of following positive electrode Duan Yiyu is the symmetrical distribution of symmetry axis, described thin grid are made up of the thin grid in a left side and right thin grid, leave the gap between the thin grid in a described left side and the right thin grid, and the thin grid in a described left side and right thin grid are the symmetrical distribution of symmetry axis with the axis of the battery sheet perpendicular with it, be connected from the gap that begins the thin grid in an adjacent left side near the thin grid of battery sheet edge, the gap of the thin grid in the adjacent right side is connected, position, axis with the perpendicular battery sheet of back electrode on the described back of the body electric field is provided with leakage silicon ribbon, described back electrode is leaking back electrode section and lower back electrode section in the disconnection formation of silicon ribbon place, and described upward back electrode section and lower back electrode section are the symmetrical distribution of symmetry axis to leak silicon ribbon, and the position, axis of the battery sheet that parallels with back electrode on the described back of the body electric field also is provided with leakage silicon ribbon.
Wherein leak silicon ribbon and refer to that silicon chip surface does not cover the position of other rete or metal, namely leaking the pattern of silicon chip matrix before the type metal slurry that the silicon ribbon place keeps band shape, without other processing.
The spacing in gap described in the utility model is identical with spacing between the two adjacent thin grid at battery sheet middle part, and the spacing between the adjacent two thin grid at battery sheet middle part is preferably 1.5 ~ 3mm.
The spacing in gap described in the utility model is preferably 1.5 ~ 3mm.
The width of leakage silicon ribbon described in the utility model and described leakage silicon ribbon is preferably 1 ~ 2mm.
Positive electricity described in the utility model is the 2n bar very, wherein n is natural number, each bar positive electrode parallels and evenly distributes, and is the symmetrical distribution of symmetry axis with the axis of the battery sheet that parallels with positive electrode, is the symmetrical distribution of symmetry axis with the axis with the perpendicular battery sheet of positive electrode simultaneously.
The width of positive electrode described in the utility model is preferably 0.5 ~ 2mm.
The preferred described back electrode of the utility model is identical with quantity and the shape of positive electrode, and is arranged on the shady face of battery sheet and positive electrode opposite position place.
The width of back electrode described in the utility model is preferably 0.5 ~ 3mm.
The distance at the adjacent back of the body electric field of distance edge, back electrode described in the utility model end is preferably 0 ~ 10mm.
The width of thin grid described in the utility model is preferably 30 ~ 80 μ m, and the bar number of thin grid is preferably 60 ~ 120.
Crystal silicon chip in the utility model can be any one of list, polysilicon chip.
Each end adjacent back of the body electric field Edge Distance of distance of every positive electrode of the utility model, back electrode and thin grid is identical, make two parts up and down of crystal silicon chip symmetrical, comprising positive electrode, back electrode and thin grid, is the symmetrical distribution of symmetry axis with the central axis perpendicular to the crystal silicon chip of positive electrode or back electrode.
The utlity model has following advantage: adopt the technical scheme in the utility model, can reduce the metallization area in crystal silicon chip front, reduce battery monomer silver and consume, take into account the production needs of normal assembly and 1/4 battery component, improve every performance of 1/4 assembly, reduce the battery product type; And the crystal-silicon solar cell generalization in the utility model is strong, simple to operate.
Description of drawings
Fig. 1 is the conventional sensitive surface design of crystal silicon cell;
Fig. 2 is the conventional shady face of crystal silicon cell;
Fig. 3 is crystal silicon cell sensitive surface among the embodiment 1;
Fig. 4 is crystal silicon cell shady face among the embodiment 1.
Embodiment
Embodiment 1
A kind of crystal silicon solar energy battery, comprise battery sheet 1, be located at the positive electrode 3 on battery sheet 1 sensitive surface and parallel the thin grid 2 of equally distributed even number bar with many of the perpendicular setting of described positive electrode, and be located at back of the body electric field 4 and back electrode 5 on the cell back light face, positive electrode 3 is made up of last positive electrode section 31 and following positive electrode section 32, leave gap 33 between last positive electrode section 31 and the following positive electrode section 32, and last positive electrode section 31 and following positive electrode section 32 are the symmetrical distribution of symmetry axis with the axis of the battery sheet perpendicular with it, thin grid 2 are made up of the thin grid 21 in a left side and right thin grid 22, leave gap 23 between the thin grid 21 in a left side and the right thin grid 22, and the thin grid 21 in a left side and right thin grid 22 are the symmetrical distribution of symmetry axis with the axis of the battery sheet perpendicular with it, be connected from the gap that begins the thin grid in an adjacent left side near the thin grid of battery sheet edge, the gap of the thin grid in the adjacent right side is connected, position, axis with the perpendicular battery sheet of back electrode 5 on the back of the body electric field 4 is provided with Lou silicon ribbon 61, back electrode 5 is leaking back electrode section 51 and lower back electrode section 52 in the disconnection formation of silicon ribbon 61 places, and last back electrode section 51 and lower back electrode section 52 are the symmetrical distribution of symmetry axis to leak silicon ribbon 61, and the position, axis of the battery sheet that parallels with back electrode 5 on the back of the body electric field 4 also is provided with Lou silicon ribbon 62.
The spacing in gap 33 is identical with spacing between the two adjacent thin grid at battery sheet middle part, and the spacing between the adjacent two thin grid at battery sheet middle part is 3mm.
The spacing in gap 23 is 3mm.
The width that leaks silicon ribbon 61 and leakage silicon ribbon 62 is 2mm.
The width of positive electrode 3 is 1.5mm.
Back electrode 5 is identical with quantity and the shape of positive electrode 3, and is arranged on the shady face of battery sheet and positive electrode opposite position place.
The width of back electrode 5 is 2mm.
The distance at the adjacent back of the body electric field of distance 4 edges 7, back electrode 5 ends is 0mm.Wherein the end of positive electrode is mutually concordant with the thin grid near the battery edge place.
The width of thin grid 2 is 70 μ m, and the bar number of thin grid is 80.Wherein for the thin grid 21 in a left side or right thin grid 22, begin to connect for continuous be connected into " Π " in every adjacent two thin grid ends from close battery edge.
Simultaneously as required, the half tone of design silk screen printing is consistent with the structure of above-mentioned battery sheet, will be through the silicon chip of processes such as surface-texturing, diffusion, deposition antireflection layer, silk screen printing back metal, the metal of the above-mentioned pattern of positive silk screen printing is through being sintered to the finished product battery.
A kind of crystal silicon solar energy battery, comprise battery sheet 1, be located at the positive electrode 3 on battery sheet 1 sensitive surface and parallel the thin grid 2 of equally distributed even number bar with many of the perpendicular setting of described positive electrode, and be located at back of the body electric field 4 and back electrode 5 on the cell back light face, positive electrode 3 is made up of last positive electrode section 31 and following positive electrode section 32, leave gap 33 between last positive electrode section 31 and the following positive electrode section 32, and last positive electrode section 31 and following positive electrode section 32 are the symmetrical distribution of symmetry axis with the axis of the battery sheet perpendicular with it, thin grid 2 are made up of the thin grid 21 in a left side and right thin grid 22, leave gap 23 between the thin grid 21 in a left side and the right thin grid 22, and the thin grid 21 in a left side and right thin grid 22 are the symmetrical distribution of symmetry axis with the axis of the battery sheet perpendicular with it, be connected from the gap that begins the thin grid in an adjacent left side near the thin grid of battery sheet edge, the gap of the thin grid in the adjacent right side is connected, position, axis with the perpendicular battery sheet of back electrode 5 on the back of the body electric field 4 is provided with Lou silicon ribbon 61, back electrode 5 is leaking back electrode section 51 and lower back electrode section 52 in the disconnection formation of silicon ribbon 61 places, and last back electrode section 51 and lower back electrode section 52 are the symmetrical distribution of symmetry axis to leak silicon ribbon 61, and the position, axis of the battery sheet that parallels with back electrode 5 on the back of the body electric field 4 also is provided with Lou silicon ribbon 62.
The spacing in gap 33 is identical with spacing between the two adjacent thin grid at battery sheet middle part, and the spacing between the adjacent two thin grid at battery sheet middle part is 3mm.
The spacing in gap 23 is 2mm.
The width that leaks silicon ribbon 61 and leakage silicon ribbon 62 is 2mm.
The width of positive electrode 3 is 1.8mm.
Back electrode 5 is identical with quantity and the shape of positive electrode 3, and is arranged on the shady face of battery sheet and positive electrode opposite position place.
The width of back electrode 5 is 2mm.
The distance at the adjacent back of the body electric field of distance 4 edges 7, back electrode 5 ends is 1mm.
The width of thin grid 2 is 60 μ m, and the bar number of thin grid is 80.Wherein for the thin grid 21 in a left side or right thin grid 22, begin to connect for continuous be connected into " Π " in every adjacent two thin grid ends from close battery edge.
Simultaneously as required, the half tone of design silk screen printing is consistent with the structure of above-mentioned battery sheet, will be through the silicon chip of processes such as surface-texturing, diffusion, deposition antireflection layer, silk screen printing back metal, the metal of the above-mentioned pattern of positive silk screen printing is through being sintered to the finished product battery.
A kind of crystal silicon solar energy battery, comprise battery sheet 1, be located at the positive electrode 3 on battery sheet 1 sensitive surface and parallel the thin grid 2 of equally distributed even number bar with many of the perpendicular setting of described positive electrode, and be located at back of the body electric field 4 and back electrode 5 on the cell back light face, positive electrode 3 is made up of last positive electrode section 31 and following positive electrode section 32, leave gap 33 between last positive electrode section 31 and the following positive electrode section 32, and last positive electrode section 31 and following positive electrode section 32 are the symmetrical distribution of symmetry axis with the axis of the battery sheet perpendicular with it, thin grid 2 are made up of the thin grid 21 in a left side and right thin grid 22, leave gap 23 between the thin grid 21 in a left side and the right thin grid 22, and the thin grid 21 in a left side and right thin grid 22 are the symmetrical distribution of symmetry axis with the axis of the battery sheet perpendicular with it, be connected from the gap that begins the thin grid in an adjacent left side near the thin grid of battery sheet edge, the gap of the thin grid in the adjacent right side is connected, position, axis with the perpendicular battery sheet of back electrode 5 on the back of the body electric field 4 is provided with Lou silicon ribbon 61, back electrode 5 is leaking back electrode section 51 and lower back electrode section 52 in the disconnection formation of silicon ribbon 61 places, and last back electrode section 51 and lower back electrode section 52 are the symmetrical distribution of symmetry axis to leak silicon ribbon 61, and the position, axis of the battery sheet that parallels with back electrode 5 on the back of the body electric field 4 also is provided with Lou silicon ribbon 62.
The spacing in gap 33 is identical with spacing between the two adjacent thin grid at battery sheet middle part, and the spacing between the adjacent two thin grid at battery sheet middle part is 2mm.
The spacing in gap 23 is 1.5mm.
The width that leaks silicon ribbon 61 and leakage silicon ribbon 62 is 1.5mm.
The width of positive electrode 3 is 1.4mm.
Back electrode 5 is identical with quantity and the shape of positive electrode 3, and is arranged on the shady face of battery sheet and positive electrode opposite position place.
The width of back electrode 5 is 2.5mm.
The distance at the adjacent back of the body electric field of distance 4 edges 7, back electrode 5 ends is 5mm.
The width of thin grid 2 is 50 μ m, and the bar number of thin grid is 90.Wherein for the thin grid 21 in a left side or right thin grid 22, begin to connect for continuous be connected into " Π " in every adjacent two thin grid ends from close battery edge.
Simultaneously as required, the half tone of design silk screen printing is consistent with the structure of above-mentioned battery sheet, will be through the silicon chip of processes such as surface-texturing, diffusion, deposition antireflection layer, silk screen printing back metal, the metal of the above-mentioned pattern of positive silk screen printing is through being sintered to the finished product battery.
More than enumerating specific embodiment describes the utility model.It is to be noted; above embodiment is only for the utility model is described in further detail; do not represent protection range of the present utility model, other people still belong to protection range of the present utility model according to nonessential modification and adjustment that prompting of the present utility model is made.
Claims (10)
1. crystal silicon solar energy battery, comprise battery sheet (1), be located at the positive electrode (3) on battery sheet (1) sensitive surface and parallel the thin grid of equally distributed even number bar (2) with many of the perpendicular setting of described positive electrode, and be located at back of the body electric field (4) and back electrode (5) on the cell back light face, it is characterized in that: described positive electrode (3) is made up of last positive electrode section (31) and following positive electrode section (32), described going up between positive electrode section (31) and the following positive electrode section (32) left gap (33), and described upward positive electrode section (31) and following positive electrode section (32) are the symmetrical distribution of symmetry axis with the axis of the battery sheet perpendicular with it, described thin grid (2) are made up of the thin grid in a left side (21) and right thin grid (22), leave gap (23) between the thin grid in a described left side (21) and the right thin grid (22), and the thin grid in a described left side (21) and right thin grid (22) are the symmetrical distribution of symmetry axis with the axis of the battery sheet perpendicular with it, be connected from the gap that begins the thin grid in an adjacent left side near the thin grid of battery sheet edge, the gap of the thin grid in the adjacent right side is connected, described back of the body electric field (4) is gone up and the position, axis of the battery sheet that back electrode (5) is perpendicular is provided with Lou silicon ribbon (61), described back electrode (5) is located to disconnect to form at leakage silicon ribbon (61) and is gone up back electrode section (51) and lower back electrode section (52), and described upward back electrode section (51) and lower back electrode section (52) are the symmetrical distribution of symmetry axis to leak silicon ribbon (61), and the position, axis that described back of the body electric field (4) is gone up the battery sheet that parallels with back electrode (5) also is provided with Lou silicon ribbon (62).
2. crystal silicon solar energy battery according to claim 1 is characterized in that: the spacing of described gap (33) is identical with spacing between the two adjacent thin grid at battery sheet middle part, and the spacing between the adjacent two thin grid at battery sheet middle part is 1.5 ~ 3mm.
3. crystal silicon solar energy battery according to claim 1, it is characterized in that: the spacing of described gap (23) is 1.5 ~ 3mm.
4. according to claim 1 or 2 or 3 described crystal silicon solar energy batteries, it is characterized in that: the width of described leakage silicon ribbon (61) and described leakage silicon ribbon (62) is 1 ~ 2mm.
5. according to claim 1 or 2 or 3 described crystal silicon solar energy batteries, it is characterized in that: described positive electrode (3) is the 2n bar, wherein n is natural number, each bar positive electrode parallels and evenly distributes, axis with the battery sheet that parallels with positive electrode is the symmetrical distribution of symmetry axis, is the symmetrical distribution of symmetry axis with the axis with the perpendicular battery sheet of positive electrode simultaneously.
6. crystal silicon solar energy battery according to claim 5, it is characterized in that: the width of described positive electrode (3) is 0.5 ~ 2mm.
7. crystal silicon solar energy battery according to claim 5, it is characterized in that: described back electrode (5) is identical with quantity and the shape of positive electrode (3), and is arranged on the shady face of battery sheet and positive electrode opposite position place.
8. crystal silicon solar energy battery according to claim 7, it is characterized in that: the width of described back electrode (5) is 0.5 ~ 3mm.
9. crystal silicon solar energy battery according to claim 7 is characterized in that: the distance at distance adjacent back of the body electric field (4) edge, described back electrode (5) end (7) is 0 ~ 10mm.
10. according to claim 1 or 2 or 3 described crystal silicon solar energy batteries, it is characterized in that: the width of described thin grid (2) is 30 ~ 80 μ m, and the bar number of thin grid is 60 ~ 120.
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CN 201320146853 CN203192803U (en) | 2013-03-28 | 2013-03-28 | Crystalline silicon solar cell |
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CN 201320146853 CN203192803U (en) | 2013-03-28 | 2013-03-28 | Crystalline silicon solar cell |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104617169A (en) * | 2013-11-05 | 2015-05-13 | 晶科能源有限公司 | Photovoltaic component |
CN106384750A (en) * | 2016-11-25 | 2017-02-08 | 乐叶光伏科技有限公司 | Slice solar cell |
CN107195727A (en) * | 2017-05-03 | 2017-09-22 | 北京捷宸阳光科技发展有限公司 | The manufacture method of half-cell piece |
CN107611212A (en) * | 2017-10-13 | 2018-01-19 | 浙江昱辉阳光能源江苏有限公司 | A kind of solar battery sheet and component based on quartering section |
CN111952411A (en) * | 2020-07-07 | 2020-11-17 | 南通苏民新能源科技有限公司 | Solar cell manufactured based on octagonal silicon wafer and manufacturing method thereof |
WO2020248895A1 (en) * | 2019-06-14 | 2020-12-17 | 泰州隆基乐叶光伏科技有限公司 | Solar cell sheet, solar cell panel and screen printing plate |
-
2013
- 2013-03-28 CN CN 201320146853 patent/CN203192803U/en not_active Expired - Lifetime
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104617169A (en) * | 2013-11-05 | 2015-05-13 | 晶科能源有限公司 | Photovoltaic component |
CN106384750A (en) * | 2016-11-25 | 2017-02-08 | 乐叶光伏科技有限公司 | Slice solar cell |
CN106384750B (en) * | 2016-11-25 | 2018-07-06 | 隆基乐叶光伏科技有限公司 | A kind of solar energy is sliced battery |
CN107195727A (en) * | 2017-05-03 | 2017-09-22 | 北京捷宸阳光科技发展有限公司 | The manufacture method of half-cell piece |
CN107611212A (en) * | 2017-10-13 | 2018-01-19 | 浙江昱辉阳光能源江苏有限公司 | A kind of solar battery sheet and component based on quartering section |
WO2020248895A1 (en) * | 2019-06-14 | 2020-12-17 | 泰州隆基乐叶光伏科技有限公司 | Solar cell sheet, solar cell panel and screen printing plate |
EP3940795A4 (en) * | 2019-06-14 | 2022-11-16 | Longi Solar Technology (Taizhou) Co., Ltd. | Solar cell sheet, solar cell panel and screen printing plate |
CN111952411A (en) * | 2020-07-07 | 2020-11-17 | 南通苏民新能源科技有限公司 | Solar cell manufactured based on octagonal silicon wafer and manufacturing method thereof |
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Granted publication date: 20130911 |