CN105679849B - A kind of crystal silicon solar batteries - Google Patents
A kind of crystal silicon solar batteries Download PDFInfo
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- CN105679849B CN105679849B CN201610058621.4A CN201610058621A CN105679849B CN 105679849 B CN105679849 B CN 105679849B CN 201610058621 A CN201610058621 A CN 201610058621A CN 105679849 B CN105679849 B CN 105679849B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 22
- 239000010703 silicon Substances 0.000 title claims abstract description 22
- 239000013078 crystal Substances 0.000 title claims abstract description 17
- 229910000679 solder Inorganic materials 0.000 claims abstract description 81
- 238000003475 lamination Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 24
- 238000003466 welding Methods 0.000 claims description 20
- 238000007639 printing Methods 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 235000008216 herbs Nutrition 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 102220170293 rs146932796 Human genes 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 102220101621 rs3852522 Human genes 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 102220015505 rs141611486 Human genes 0.000 description 1
- 102220062245 rs1800369 Human genes 0.000 description 1
- 102220062244 rs748527030 Human genes 0.000 description 1
- 102220059961 rs786201335 Human genes 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a kind of crystal silicon solar batteries, it includes battery body and the front electrode back electrode positioned at battery body front both sides, wherein, the front electrode includes a plurality of secondary grid line along the spaced arrangement of first direction, the front electrode further includes the thin grid line of M items of spaced arrangement in a second direction, and the width of the thin grid line is 0.10~0.25mm；Wherein, spaced N number of solder contacts are additionally provided on each thin grid line, the solder contacts lamination is arranged on the thin grid line, the solder contacts are shaped to two or more in rectangular, round and ellipse, and the length of the short side of the rectangular length of side, circular diameter or ellipse is respectively greater than the width of the thin grid line；The back electrode includes N × M electrode unit, and the electrode unit is corresponded with the solder contacts, and the length of the electrode unit in the first direction and a second direction is not less than length of the solder contacts on corresponding direction respectively.
Description
Technical field
The present invention relates to technical field of solar batteries, and in particular to a kind of crystal silicon solar batteries.
Background technology
Crystal silicon solar batteries are a kind of electronic components that solar energy can be transformed into electric energy.Crystalline silicon class is too
The processes such as making herbs into wool, diffusion, plated film, silk-screen printing, sintering are generally passed through in the preparation of positive energy battery.Making herbs into wool is divided into monocrystalline, polycrystalline system
Suede, single crystal battery are to form pyramid matte in silicon chip surface using the method for alkali making herbs into wool, and polycrystalline battery uses the side of acid etch
Method forms pit matte in silicon chip surface, and the matte of silicon face can increase absorption of the sunlight in battery surface, reach sunken light
Effect；Diffusing procedure is by way of thermal diffusion to forming P-N junction inside silicon chip, in this way when there is light irradiation, inside silicon chip
Voltage can be formed, is the basis of solar cell power generation；Coating process is to reduce minority carrier in battery surface
It is compound, the transfer efficiency of crystal silicon solar cell sheet can be improved；Silkscreen process is exactly to make the electricity of solar cell
Pole in this way can export electric current when light irradiates.Silk-screen printing is most widely used one in prepared by present crystal silicon battery
Kind technique, process sequence are first to carry out backplate printing and drying, then carry out the printing and drying of Al-BSF, finally carry out
The printing of front electrode, drying, are being sintered, and allow preparing silver paste that electrode uses and battery forms contact.
In the front electrode of crystal silicon solar batteries, electrode structure generally includes crisscross main gate line and secondary grid line,
Main gate line is electrical connected with secondary grid line.When there is illumination, cell piece just will produce electric current, and electric current passes through internal emitter flow chart
Face electrode pair grid line is collected via secondary grid line and then is flowed in battery main gate line and is exported.Electric current is collected in secondary grid line
It will produce loss in the process, this we are known as the power loss of resistance.Battery main gate line and secondary grid line be in battery by
Smooth surface will necessarily block a part of light and be radiated at battery surface in this way, to reduce the effective area of shining light of battery, this part
We term it optical loss for loss.Whether p-type or N-type cell, as long as there are electrode structures for battery front side, it is necessary to examine
Consider continuing to optimize for electrode structure, not only reduces shading-area to reach but also ensure electric current smoothly derived purpose.
In existing electrode structure at right side, the quantity of main gate line is usually 3, and width is 1.5mm or so；Secondary grid line
Quantity is usually 80~100, and width is 40 μm or so.The wider width of main gate line so that the weldering of front electrode and battery
Band can weld well, but shading-area is also larger.In recent years, it in order to reduce the shading-area of front electrode, carries in the industry
Go out a kind of electrode structure at right side of no main grid, mainly removed 3 main gate lines in electrode structure at right side, only retains secondary grid
Line after battery completes, is directly welded with secondary grid line, by the direct derived current of welding using superfine cylindrical welding.?
Superfine welding causes rosin joint or nothing with the welding process of secondary grid line since the width of secondary grid line is smaller, secondary grid line is excessively low
The abnormal conditions of method welding, make the power of photovoltaic module reduce.
Invention content
In view of the shortcomings of the prior art, the present invention provides a kind of crystal silicon solar batteries, by front electrode
The improvement of structure so that electrode structure at right side, which can reach, not only to have been reduced shading-area but also ensured electric current smoothly derived purpose；Into
One step, the back electrode structure in the solar cell is accordingly improved, the dosage of silver paste in back electrode structure is saved.
To achieve the goals above, present invention employs the following technical solutions：
A kind of crystal silicon solar batteries, including battery body and positioned at the positive front electrode of battery body and positioned at electricity
The back electrode at the pond ontology back side, wherein the front electrode further includes the thin grid line of M items of spaced arrangement in a second direction,
The thin grid line is electrically connected with the secondary grid line, and the width of the thin grid line is 0.10~0.25mm；Wherein, M=10~20；
Wherein, spaced N number of solder contacts are additionally provided on each thin grid line, the solder contacts lamination is arranged in the thin grid
It is electrically connected on line and with the thin grid line, the solder contacts are shaped to two in rectangular, round and ellipse
Kind or more, the length range of the short side of the rectangular length of side, circular diameter or ellipse is 0.2~1mm respectively, and institute
The length for stating the short side of the rectangular length of side, circular diameter or ellipse is respectively greater than the width of the thin grid line；Wherein, N=5
~15；The back electrode includes N × M electrode unit, and the electrode unit is corresponded with the solder contacts, the electrode
The length of unit in the first direction and a second direction is not less than length of the solder contacts on corresponding direction respectively.
Preferably, the solder contacts are formed in by secondary printing technique on the thin grid line.
Preferably, a plurality of secondary grid line is equidistantly arranged along first direction, between the thin grid line of M items waits in a second direction
Away from arrangement, the second direction is mutually perpendicular to the first direction；The solder contacts be set to the thin grid line with it is described
The position of secondary grid line intersection.
Preferably, N number of solder contacts on each thin grid line equidistantly arrange along the length direction of the thin grid line.
Preferably, the array distribution that all solder contacts in the front electrode are arranged in N rows × M.
Preferably, on each thin grid line, solder contacts alternate intervals setting of different shapes.
It is preferably located on the identical and adjacent two thin grid line of shape of the solder contacts on one thin grid line
The shape of solder contacts is different.
Preferably, the electrode unit along first direction include spaced first electrode portion, second electrode portion and
Third electrode portion, and along first direction, the length in the second electrode portion is respectively greater than first electrode portion and third electricity
The length in pole portion.
Preferably, along first direction, the first electrode portion, second electrode portion and third electrode portion length ratio
For (0.4~0.6):1:(0.4~0.6).
Preferably, along first direction, the length in the second electrode portion is 0.6~1mm, the second electrode portion with
The distance being spaced between first electrode portion and third electrode portion is 0.3~0.6mm.
Compared with the prior art, in the front electrode of crystal silicon solar batteries provided in an embodiment of the present invention, usage quantity
The smaller thin grid line of more width replaces main gate line in the prior art, generally shading-area smaller, reduces light loss, and
And greater number of thin grid line is evenly distributed on solar battery front side so that the electric current that secondary grid line is collected can be more successfully
Export, reduces power attenuation；In addition, being provided with larger rectangular, the round or ellipse welding of area in thin grid line superimposed layer
Contact increases the contact area of pad and the height of pad, when welding welding, less welding and welding of battery film
Abnormal problem.Further, by back electrode be divided into the one-to-one electrode unit of solder contacts, and electrode unit is adopted
With segmented, the dosage of silver paste in back electrode structure is effectively reduced.
Description of the drawings
Fig. 1 is the structural schematic diagram of crystal silicon solar batteries provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of the front electrode in the embodiment of the present invention；
Fig. 3 is the enlarged diagram of part A in Fig. 2；
Fig. 4 is the graphical representation of exemplary of solder contacts oval in the embodiment of the present invention；
Fig. 5 is the structural schematic diagram of the back electrode in the embodiment of the present invention；
Fig. 6 is the structural schematic diagram of the electrode unit in the embodiment of the present invention.
Specific implementation mode
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the accompanying drawings to the specific reality of the present invention
The mode of applying is described in detail.The example of these preferred embodiments is illustrated in the accompanying drawings.Shown in attached drawing and according to
The embodiments of the present invention of attached drawing description are only exemplary, and the present invention is not limited to these embodiments.
Here, it should also be noted that, in order to avoid having obscured the present invention because of unnecessary details, in the accompanying drawings only
It shows the structure and/or processing step closely related with scheme according to the present invention, and is omitted little with relationship of the present invention
Other details.
As shown in Figure 1, the present embodiment provides firstly a kind of crystal silicon solar batteries, which mainly wraps
Include battery body 1 and the back electrode 3 positioned at 1 positive front electrode 2 of battery body and positioned at 1 back side of battery body.Battery
Ontology 1 is main to prepare the PN junction battery to be formed by process for etching, diffusion technique and etching technics using silicon chip.Front electrode
2 and back electrode 3 be mainly that two sides of battery body 1 are respectively formed in by screen printing process, for exporting battery sheet
The electric energy that body 1 is converted.
Refering to Fig. 2 and Fig. 3, the front electrode 2 the present embodiment provides in includes along first direction (Y-direction in such as Fig. 2)
Spaced and arranged in parallel a plurality of secondary grid line 10, (X-direction in such as Fig. 2) is spaced and arranged in parallel in a second direction
A plurality of thin grid line 20, a plurality of secondary grid line 10 is electrically connected with each other with a plurality of thin grid line 20.Wherein, secondary grid line 10 is led
It is used to collect the photogenerated current of solar cell generation, thin grid line 20 is used to the electric current that secondary grid line 10 is collected collecting output.
Further, spaced multiple solder contacts 30 are additionally provided on each thin grid line 20,30 lamination of the solder contacts is set
It sets on the thin grid line 20 and is electrically connected with the thin grid line 20, the shape of the solder contacts 30 includes round and side
Shape.The solder contacts 30 are mainly used for being welded to connect with welding after battery completes.Specific in the present embodiment,
On each thin grid line 20, the setting of round and rectangular 30 alternate intervals of solder contacts.Certainly, in some other embodiments,
Solder contacts 30 of different shapes can also be to arrange in any order.
Wherein, the quantity of secondary grid line 10 can select in the range of 80~100, and width can be selected 30~50
In the range of μm.The quantity M of thin grid line 20 can be selected in the range of 10~20, and width D 1 can select 0.10~
In the range of 0.25mm.The quantity N for the solder contacts 30 being arranged on each thin grid line 20 can be selected in the range of 5~15,
The diameter R of circular solder contacts 30 can be selected in the range of 0.2~1mm, and meet the diameter R of solder contacts 30
More than the width of thin grid line 20, the length of side L1 of rectangular solder contacts 30 can be selected in the range of 0.2~1mm, and be wanted
The length of side for meeting solder contacts 30 is more than the width of thin grid line 20.In the present embodiment, the quantity of secondary grid line 10 is 90, secondary grid
The width of line 10 is 40 μm；The width D 1 of the quantity M=15 of thin grid line 20, thin grid line 20 are 0.2mm；On each thin grid line 20
The diameter R of the quantity N=10 of solder contacts 30, circular solder contacts 30 are 0.8mm, and rectangular solder contacts 30 are specially just
Rectangular, length of side L1 is 0.8mm.
Wherein, 30 lamination of the solder contacts is arranged on the thin grid line 20.Specifically, electrode structure at right side is being prepared
When, secondary grid line 10 and thin grid line 20 are prepared by one-step print technique first, then again by secondary printing technique in institute
It states and prepares solder contacts 30 on thin grid line 20.
In the present embodiment, as shown in Fig. 2, a plurality of secondary grid line 10 is between first direction (Y-direction in such as Fig. 2)
Away from arrangement, (X-direction in such as Fig. 2) equidistantly arranges the thin grid line of the M items 20 in a second direction, the second direction with it is described
First direction is mutually perpendicular to.Further, the solder contacts 30 are set to the thin grid line 20 and intersect with the secondary grid line 10
Position, also, N number of solder contacts 30 on each thin grid line 20 are equidistantly arranged along the length direction of the thin grid line 20
Row.
More specifically, in the present embodiment, as shown in Fig. 2, between the arrangement of N number of solder contacts 30 on each thin grid line 20
Away from all equal, therefore, in entire electrode structure at right side, all solder contacts 30 in N rows × M row array distribution.Specifically,
Since round and rectangular 30 alternate intervals of solder contacts on each thin grid line 20 are arranged, in the solder contacts 30 of N rows × M row
In, the circular solder contacts 30 of odd number behavior, the rectangular solder contacts 30 of even number behavior；It is of course also possible to be set as even number line
For circular solder contacts 30, the rectangular solder contacts 30 of odd number behavior.
Further, can also be that welding of the setting on one thin grid line 20 is touched in some other embodiments
The shape of solder contacts 30 on the identical and adjacent two thin grid line 20 of shape of point 30 is different.It specifically, can be with
The shape that the solder contacts 30 on first thin grid line 20 are arranged is circle, the solder contacts 30 on the thin grid line of setting Article 2 20
Shape be rectangular, i.e., in the solder contacts 30 of N rows × M row, odd number is classified as circular solder contacts 30, and even number is classified as rectangular
Solder contacts 30；It is of course also possible to which being set as even number is classified as circular solder contacts 30, odd number is classified as rectangular solder contacts
30。
The front electrode for the crystal silicon solar batteries that above example provides can be effectively reduced shading-area.With the sun
For the square that the size of energy battery front side is 156mm × 156mm, according to the front electrode and the present invention of existing three main grid
The electrode structure at right side that embodiment provides calculates separately shading-area：
1, the electrode structure at right side of existing three main grid.The knot of conventional three 1.5mm wide main gate lines, 90 40 μm secondary grid lines
In structure, main gate line may be designed as hollow out form, and main grid all areas can still burn-on when reducing the silver paste that printing uses, but welding
The welding of 1.5mm width or so and keep the sun off.Therefore it is 1.5mm × 3 × 156mm=to the shielded area of sunlight at main grid
702mm2；Secondary grid line and 4 frame shielded areas are 0.04mm × (90+2) × (153.5mm-1.5mm × 3)+2 × 153.5mm
× 0.04mm=560.6.Total shielded area of conventional three main grid front electrodes is 1262.6mm2。
2, electrode structure at right side provided in an embodiment of the present invention.According to example specifically, the quantity of secondary grid line is 90,
Its width is 40 μm；The quantity of thin grid line is 15, width 0.2mm；The quantity of solder contacts on each thin grid line is
10, the shape half of solder contacts is circle, and diameter R is 0.8mm, the other half is square, and its side length is 0.8mm.Then：
A, 15 thin grid line is to the shielded area of sunlight：0.2mm × 15 × 156mm=468mm2；
B, secondary grid line and 4 frames to sunlight block for：0.04mm×(90+2)×(153.5mm-0.2mm×10)+
0.04mm × 2 × 153.5mm=566.12mm2；
C, in addition to thin grid line 0.8mm diameters circular pattern to sunlight block for：
[π×0.42mm2-(0.8mm-0.2mm)×0.04mm-π×0.42mm2×29°×2÷360°-0.2×0.4×
Sin14.5] × 75=28.32mm2；
D, in addition to thin grid line the 0.8mm length of sides square pattern to sunlight block for：(0.8mm-0.2mm)×0.8mm
× 75=36mm2；
Total shielded area is above：468mm2+566.12mm2+28.32mm2+36mm2=1098.44mm2.The present invention is implemented
Compared to the front electrode of existing three main grid, the shading-area of reduction is the front electrode that example provides：1262.6mm2-
1098.44mm2=164.16mm2。
In some other embodiments, with reference to front electrode as provided above, wherein can also be by solder contacts 30
It is designed as ellipse.That is, the shape of solder contacts 30 includes ellipse and round, or including ellipse with it is rectangular, may be used also
Include ellipse simultaneously and round and rectangular, ellipse and the round and rectangular alternate intervals on each thin grid line 20 to be
Setting is either arranged in any order.Specifically, the solder contacts 30 of ellipse as shown in Figure 4, oval welding
Contact 30 is also disposed on the position that the thin grid line 20 intersects with the secondary grid line 10.The long side of ellipse is prolonged with thin grid line 20
Stretch that direction is identical, oval short side is identical as secondary 10 extending direction of grid line.Wherein, the length of oval short side can select
In the range of 0.2~1mm, and the length L2 that meet the short side of solder contacts 30 is more than the width D 1 of thin grid line 20.
Further, refering to Fig. 5 and Fig. 6, the back electrode 3 in the present embodiment includes N × M electrode unit 31, i.e., described in
Electrode unit 31 is equal, and the electrode unit 31 and the solder contacts 30 1 with the quantity of the solder contacts 30
One corresponds to, and the electrode unit 31 is in a first direction in (Y-direction in such as Fig. 5) and second direction (X-direction in such as Fig. 5)
Length is not less than length of the solder contacts on corresponding direction respectively.Specifically, if solder contacts 30 are circle, then institute
State the diameter that the length of electrode unit 31 in the first direction and a second direction is not less than circular solder contacts 30 respectively；If
Solder contacts 30 are ellipse, then the length of the electrode unit 31 in a first direction is not less than oval solder contacts 30
Long axis is not less than the short axle of the solder contacts 30 of ellipse in the length of second direction；If solder contacts 30 are rectangular, described
The length of electrode unit 31 in the first direction and a second direction is not less than rectangular solder contacts 30 on corresponding direction respectively
Length.
Wherein, as shown in fig. 6, the electrode unit 31 along first direction include spaced first electrode portion 311,
Second electrode portion 312 and third electrode portion 313, and along first direction, the length difference in the second electrode portion 312 is big
Length in first electrode portion 311 and third electrode portion 313.In the preferred scheme, along first direction, described first is electric
The length ratio L21 in pole portion 311, second electrode portion 312 and third electrode portion 312:L22:L23=(0.4~0.6):1:(0.4
~0.6).Wherein, the length L21 in the second electrode portion 312 can be selected as 0.6~1mm, the second electrode portion 312 with
The distance D21 and D22 being spaced between first electrode portion 311 and third electrode portion 313 can be selected as 0.3~0.6mm.Wherein,
L21 can be selected as equal numerical value with L23, and D21 and D22 can be selected as equal numerical value.Specific in the present embodiment, respectively
The value of a parameter is as follows：L21=L23=0.5mm, L22=1mm, D21=D22=0.5mm；Electrode unit 31 is along second
Length L24 on direction is equal with the diameter of solder contacts 30, i.e. L24=0.8mm.
The back electrode of existing three main grids solar cell generally includes three row, each row include three sizes for 21mm ×
The entire area of the electrode block of 3mm, back electrode is：21mm × 3mm × 9=567mm2。
In the back electrode structure that embodiments above of the present invention provides, including 10 × 15=150 electrode unit, electrode
The width of unit is L24=0.8mm, and the entire area of length L21+L22+L23=2mm, back electrode are：2mm×0.8mm×
150=240mm2。
Back electrode provided in an embodiment of the present invention is compared to the back electrode of existing three main grids solar cell, integral face
Product reduces 567mm2-240mm2=327mm2, under conditions of identical screen printing process, silver paste dosage reduces 50%
More than, greatly reduce cost.
In conclusion in the front electrode for the crystal silicon solar batteries that above example provides, the more width of usage quantity
Smaller thin grid line replaces main gate line in the prior art, generally shading-area smaller, reduces light loss, and most
The thin grid line of amount is evenly distributed on solar battery front side so that the electric current that secondary grid line is collected can be exported more successfully, be dropped
Low power attenuation；In addition, being provided with the larger rectangular or round or ellipse solder contacts of area in thin grid line superimposed layer, increase
The contact area of pad and the height of pad are added, when welding welding, less welding and welding of battery film are abnormal
Problem.Further, by back electrode be divided into the one-to-one electrode unit of solder contacts, and electrode unit using segmentation
Formula effectively reduces the dosage of silver paste in back electrode structure.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also include other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
The above is only the specific implementation mode of the application, it is noted that for the ordinary skill people of the art
For member, under the premise of not departing from the application principle, several improvements and modifications can also be made, these improvements and modifications are also answered
It is considered as the protection domain of the application.
Claims (1)
1. a kind of crystal silicon solar batteries, including battery body and positioned at the positive front electrode of battery body and it is located at battery
The back electrode at the ontology back side, which is characterized in that
The front electrode includes a plurality of secondary grid line spaced and arranged in parallel along first direction, and the front electrode also wraps
The thin grid line of M items of spaced arrangement in a second direction is included, the thin grid line is electrically connected with the secondary grid line, the thin grid line
Width be 0.10~0.25mm；Wherein, M=10~20；Wherein, it is additionally provided with spaced N number of weldering on each thin grid line
Contact point, the solder contacts lamination are arranged on the thin grid line and are electrically connected with the thin grid line, and the welding is touched
Point is shaped to two or more in rectangular, round and ellipse, the rectangular length of side, circular diameter or ellipse
The length range of short side be 0.2~1mm respectively, and the short side of the rectangular length of side, circular diameter or ellipse
Length is respectively greater than the width of the thin grid line；Wherein, N=5~15；The solder contacts are formed in by secondary printing technique
On the thin grid line, a plurality of secondary grid line is equidistantly arranged along first direction, and the thin grid line of M items is equidistant in a second direction
Arrangement, the second direction are mutually perpendicular to the first direction；The solder contacts are set to the thin grid line and the pair
The position of grid line intersection；
Wherein, the array distribution that all solder contacts in the front electrode are arranged in N rows × M；On each thin grid line, not similar shape
The solder contacts alternate intervals of shape are arranged；Either, the shape for being located at the solder contacts on one thin grid line is identical and adjacent
Two thin grid line on solder contacts shape it is different；
The back electrode includes N × M electrode unit, and the electrode unit is corresponded with the solder contacts, the electrode
The length of unit in the first direction and a second direction is not less than length of the solder contacts on corresponding direction respectively；It is described
Electrode unit is including spaced first electrode portion, second electrode portion and third electrode portion along first direction, and on edge
On first direction, the length ratio in the first electrode portion, second electrode portion and third electrode portion is (0.4~0.6):1:(0.4
~0.6)；
Wherein, along first direction, the length in the second electrode portion is 0.6~1mm, the second electrode portion and the first electricity
The distance being spaced between pole portion and third electrode portion is 0.3~0.6mm.
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| CN201610058621.4A CN105679849B (en) | 2016-01-28 | 2016-01-28 | A kind of crystal silicon solar batteries |
| PCT/CN2016/092195 WO2017128669A1 (en) | 2016-01-28 | 2016-07-29 | Crystalline silicon solar cell |
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| CN105679849B (en) * | 2016-01-28 | 2018-11-02 | 黄河水电光伏产业技术有限公司 | A kind of crystal silicon solar batteries |
| CN105552144B (en) * | 2016-01-28 | 2018-02-23 | 黄河水电光伏产业技术有限公司 | A kind of front electrode of crystal silicon solar batteries |
| CN105552145B (en) * | 2016-01-28 | 2017-08-11 | 黄河水电光伏产业技术有限公司 | A kind of crystal silicon solar batteries |
| CN106771416A (en) * | 2016-12-20 | 2017-05-31 | 常州天合光能有限公司 | A kind of efficient solar battery for being easy to test and its test device |
| CN109119497B (en) * | 2018-08-29 | 2024-04-05 | 晶澳（扬州）太阳能科技有限公司 | Silicon-based solar cell structure |
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| CN102931245A (en) * | 2012-11-28 | 2013-02-13 | 山东力诺太阳能电力股份有限公司 | Solar cell front face grid line and solar cell sheet printed with same |
| CN203415587U (en) * | 2013-06-27 | 2014-01-29 | 江阴鑫辉太阳能有限公司 | Five-main-grid high-efficiency solar cell |
| CN104282772A (en) * | 2013-07-12 | 2015-01-14 | 上海神舟新能源发展有限公司 | Positive electrode solar crystalline silicon battery with four main grid lines |
| CN203521432U (en) * | 2013-09-25 | 2014-04-02 | 衡水英利新能源有限公司 | Electrode structure of solar cell sheet |
| CN104218104A (en) * | 2014-08-26 | 2014-12-17 | 南昌大学 | Solar cell positive electrode grid line structure with main grid line replaced by trigger discs |
| CN204216051U (en) * | 2014-12-08 | 2015-03-18 | 常州天合光能有限公司 | The positive electrode structure of crystal silicon solar battery |
| CN204464295U (en) * | 2015-01-27 | 2015-07-08 | 苏州阿特斯阳光电力科技有限公司 | A kind of solar cell |
| CN104576781A (en) * | 2015-01-27 | 2015-04-29 | 苏州阿特斯阳光电力科技有限公司 | Solar cell |
| CN204332976U (en) * | 2015-01-27 | 2015-05-13 | 苏州阿特斯阳光电力科技有限公司 | A kind of electrode structure at right side of solar cell |
| CN204632769U (en) * | 2015-05-29 | 2015-09-09 | 苏州阿特斯阳光电力科技有限公司 | A kind of back electrode structure of many main grids solar cell |
| CN105047733B (en) * | 2015-07-13 | 2017-10-20 | 苏州阿特斯阳光电力科技有限公司 | A kind of back electrode structure of many main grid solar cells |
| CN105679849B (en) * | 2016-01-28 | 2018-11-02 | 黄河水电光伏产业技术有限公司 | A kind of crystal silicon solar batteries |
| CN105679850A (en) * | 2016-01-28 | 2016-06-15 | 黄河水电光伏产业技术有限公司 | Crystalline silicon solar cell |
| CN105633177A (en) * | 2016-01-28 | 2016-06-01 | 黄河水电光伏产业技术有限公司 | Crystalline silicon solar cell |
| CN105552145B (en) * | 2016-01-28 | 2017-08-11 | 黄河水电光伏产业技术有限公司 | A kind of crystal silicon solar batteries |
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| WO2017128669A1 (en) | 2017-08-03 |
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