JP2016503959A - Solar cell slice electrode structure - Google Patents

Abstract

A back electrode (4) distributed on the back surface of the solar cell slice; and a front gate electrode distributed on the front surface of the solar cell slice, the front gate electrode including a main gate line (1) parallel to each other, A solar cell slice electrode structure comprising a plurality of sub-gate lines (3) perpendicular to the gate line (1), wherein there are four main gate lines (1), two of which are arranged on both sides The other two are arranged in the middle, and the width of the interval (2) between the two main gate lines (1) in the middle is 0.2 mm to 2 mm. . It is an electrode structure of a solar cell slice having a plurality of independent power generation units, and the independent units of each part may be used in parallel or may be used as an independent power generation unit.

Description

  The present invention relates to the field of optoelectronic technology, and more particularly to an electrode structure of a solar cell slice.

  As energy all over the world becomes tense, solar energy has gained widespread attention because it has the advantage of not being polluted or having a large market space. Photovoltaic power generation has advantages such as safety, no noise, and low failure rate. Solar cells are the main part of solar power technology for converting solar energy directly into electrical energy.

  A normal crystalline silicon solar cell is composed of a back electrode, a P-type layer made of a semiconductor material, an N-type layer, a PN junction, a reflection reducing film, a front gate electrode, and the like. When sunlight irradiates the surface of the solar cell, the reflection loss of light on the cell surface can be reduced by the reflection reducing film or the velvet structure. A semiconductor structure in a solar cell generates a pair of electrons and holes after absorbing solar energy. The electron-hole pairs are separated by an electric field generated by a PN junction inside the semiconductor, electrons flow into the N region, and holes flow into the P region to form a photogenerating electric field. When the positive and negative electrodes of the crystalline silicon solar cell are connected to an external circuit, a photogenerated current flows through the external circuit.

  Currently, a crystalline silicon solar cell often uses a P-type wafer. After the phosphorus diffusion, a PN junction is formed, a back electrode and a back surface electric field are formed on a P-type wafer, and a front gate electrode is formed on the diffused N surface. Operates using the power effect. The front gate electrode of a 125 mm × 125 mm single crystal silicon or polycrystalline silicon battery generally employs two main gate lines, but the front gate electrode of a 156 mm × 156 mm single crystal silicon or polycrystalline silicon battery is The number of main gate lines may be increased to three. Further, a certain number of sub-gate lines distributed uniformly and in parallel are provided perpendicular to both sides of the main gate line. The current generated by the crystalline silicon solar cell by light irradiation is conducted to each other through the sub-gate line and the main gate line, the main gate line constitutes the negative electrode of the battery, and the current gathers on the main gate line to output Has been. However, such a current collecting method for a battery still has the following problems. In other words, only batch power generation is possible, and there is only one type of power supply method. Therefore, when there is a shortage of power supply requests, waste may be caused.

  The present invention has been made to overcome the disadvantages of the prior art, and an object thereof is to provide a solar cell slice electrode structure having a plurality of independent power generation units. The independent units in each part may be used in parallel or may be used as an independent power generation unit.

  The technical means for realizing the object of the present invention includes a back electrode distributed on the back surface of the solar cell slice and a front gate electrode distributed on the front surface of the solar cell slice, and the front gate electrodes are parallel to each other. Main gate lines and sub-gate lines perpendicular to the plurality of main gate lines. There are four main gate lines, two of which are arranged on both sides and the other two are arranged in the middle. And it is the electrode structure of the solar cell slice whose width | variety of the space | interval between two middle main gate lines is 0.2 mm-2 mm.

  The back electrode is composed of four parallel lines, two of which are arranged on both sides, the other two are arranged in the middle, and the width of the space between the two back electrodes in the middle Is 0.2 mm to 2 mm.

  Further, the width of the main gate line is 0.5 mm to 2 mm.

  When the above technical means is adopted, there are four main gate lines, two of which are arranged on both sides, the other two are arranged in the middle, and between the two main gate lines in the middle. Since the interval width is 0.2 mm to 2 mm, the two main gate lines are used as one main unit, the battery is divided into two parts on the left and right sides, and the left and right electrodes on the front of the battery are separated from each other. By not relating to each other, current collection can be performed independently. In the module process, the left and right parts may be used in parallel at the same time to avoid waste when power supply requirements are insufficient.

Hereinafter, the features and performance of the present invention will be further described with reference to the embodiments and the accompanying drawings.
1 is a schematic front view of the present invention. It is a back surface schematic diagram of the present invention.

  In order to facilitate understanding of the content of the present invention, the present invention will be described in more detail below based on specific embodiments and in conjunction with the accompanying drawings.

  As shown in FIG. 1, the electrode structure of the solar cell slice includes a back electrode 4 distributed on the back surface of the solar cell slice and a front gate electrode distributed on the front surface of the solar cell slice. A main gate line 1 parallel to each other and a plurality of sub-gate lines 3 perpendicular to the main gate line 1 are provided. There are four main gate lines 1, two of which are arranged on both sides, The two are arranged in the middle, and the width of the interval 2 between the two main gate lines 1 in the middle is 0.2 mm to 2 mm. The width of the main gate line 1 is 0.5 mm to 2 mm.

  As shown in FIG. 2, the back electrode 4 is composed of four parallel lines, two of which are arranged on both sides, the other two are arranged in the middle, and two intermediate back electrodes 4 are arranged. The width of the interval 5 between is 0.2 mm to 2 mm.

  The electrode of the solar cell slice 6 is manufactured by any electrode manufacturing method such as screen printing, vapor deposition, sputtering, electroplating, and spraying. In this embodiment, the back surface electric field 7, the back electrode 4, and the front gate electrode are manufactured by a screen printing method. First, select a P-type single crystal silicon sheet that has passed the inspection with a standard of 156 mm × 156 mm, and form a monumental structure on the single crystal silicon sheet through chemical cleaning and surface texturing to absorb light. Increase the battery short circuit current and conversion efficiency. Next, an N-type crystalline silicon layer is formed on the P-type single crystal silicon sheet by a process such as high-temperature diffusion or ion implantation to form a PN junction configuration. Then, the edge diffusion layer is removed by plasma etching, the diffused PSG (Phospho Silicate Glass) layer is removed by chemical corrosion, and a silicon nitride permeable film is deposited. The silicon nitride permeable film reduces the light emissivity on the surface of the silicon sheet, improves the passivation effect between the silicon sheet surface and the inside by hydrogen ion bonding, and reduces carrier recombination. Finally, the back electrode 4 and the front gate electrode are manufactured by screen printing.

  In this embodiment, first, the back electrode 4 is printed by screen printing. The back electrode 4 is sintered with silver aluminum paste. Next, a back surface electric field 7 of the solar cell is printed on the back surface of the solar cell slice 6. In this embodiment, there are four back electrodes.

The above specific embodiments have described the objects, technical means and beneficial effects of the present invention in more detail. Therefore, the above description is only a specific example of the present invention and does not limit the present invention.
It should be understood that various modifications, changes, improvements and the like are all included within the protection scope of the present invention without departing from the spirit or scope of the present invention.

DESCRIPTION OF SYMBOLS 1 Main gate line 2 Space | interval between main gate lines 3 Sub gate line 4 Back electrode 5 Space | interval between back electrodes 6 Battery slice 7 Back surface electric field.

Claims (3)

A back electrode (4) distributed on the back surface of the solar cell slice; and a front gate electrode distributed on the front surface of the solar cell slice, the front gate electrode including a main gate line (1) parallel to each other, An electrode structure of a solar cell slice comprising a plurality of sub-gate lines (3) perpendicular to the gate line (1),
There are four main gate lines (1), two of which are arranged on both sides, the other two are arranged in the middle, and the distance between the two main gate lines (1) in the middle (2 ) Has a width of 0.2 mm to 2 mm.   The back electrode (4) is composed of four parallel lines, two of which are arranged on both sides, the other two are arranged in the middle, and between the two back electrodes (4) in the middle The electrode structure of the solar cell slice according to claim 1, wherein the width of the interval (5) is 0.2 mm to 2 mm.   The electrode structure of the solar cell slice according to claim 2, wherein the width of the main gate line (1) is 0.5 mm to 2 mm.

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