CN202049959U - Right side gate electrode of solar cell - Google Patents
Right side gate electrode of solar cell Download PDFInfo
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- CN202049959U CN202049959U CN2011200785780U CN201120078578U CN202049959U CN 202049959 U CN202049959 U CN 202049959U CN 2011200785780 U CN2011200785780 U CN 2011200785780U CN 201120078578 U CN201120078578 U CN 201120078578U CN 202049959 U CN202049959 U CN 202049959U
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- grid line
- gate electrode
- solar cell
- secondary grid
- positive gate
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Abstract
The utility model provides a right side gate electrode of a solar cell. The right side gate electrode is disposed at a surface of the solar cell, and the right side gate electrode comprises a main gate line and auxiliary gate lines connected with the main gate line, wherein the auxiliary gate lines are distributed like a net. In the right side gate electrode of the solar cell provided by the utility model, the auxiliary gate lines are distributed like a net on the surface of the solar cell, and so photo-generated carriers in each area of the surface of the solar cell have multiple paths to reach the main gate line. When a broken line or an incomplete printing exists in a certain position of the auxiliary gate lines, the photo-generated carriers can complete acquisition and transmission via an auxiliary gate line which is near the position and is communicated with the main gate line, thereby avoiding reduction of cell efficiency.
Description
Technical field
The utility model relates to a kind of solar cell, particularly a kind of positive gate electrode of solar cell.
Background technology
Along with day being becoming tight of global energy, solar energy is subjected to the extensive attention of countries in the world with exclusive advantage such as pollution-free, that the market space is big.Advantage such as that photovoltaic generation has is safe and reliable, noiseless, failure rate are low, solar cell is the main devices that in the photovoltaic power generation technology solar energy directly is converted to electric energy.
Common crystal silicon solar energy battery is that the P type layer that is made of backplate, semi-conducting material, N type layer, P-N knot, antireflection film, positive gate electrode etc. partly constitute.When solar irradiation was mapped to solar cell surface, antireflection film and suede structure can effectively reduce the light reflection loss of battery surface.After semiconductor structure in the solar cell absorbs solar energy, excite and produce electronics, the hole is right, electronics, hole are to being separated by the inner P-N knot of semiconductor built-in field, electronics flows into the N district, the hole flows into the P district, form the photoproduction electric field,, just have photogenerated current to flow through in the external circuit if the positive and negative electrode of crystal-silicon solar cell is connected with external circuit.Positive gate electrode in the solar battery structure plays the effect of collecting photo-generated carrier, but because this layer is often made by lighttight metal material, its existence can reduce the glazed area of battery surface, therefore current suggestion of process design is under the prerequisite that guarantees the contact of positive gate electrode good ohmic, reduces the gate electrode live width and the shared gross area of all gate electrode lines as much as possible.
Most at present crystal silicon solar batteries adopts P type silicon chip, forms the P-N knot after the process phosphorous diffusion, makes back of the body field and back electrode on P type silicon, makes positive gate electrode at the N face that diffuses to form, and entire device utilizes the photovoltaic effect of P-N knot to come work.Generally select two main grid lines for use for the monocrystalline silicon of 125mm * 125mm or the positive gate electrode of polycrystal silicon cell, rise to three main grid lines for the monocrystalline silicon of 156mm * 156mm or the positive gate electrode of polycrystal silicon cell.Add the secondary grid line of the even and parallel distribution of some then on both sides perpendicular to the main grid line.The electric current that crystal silicon solar batteries produces under illumination is by secondary grid line and main grid line mutual conduction, and the main grid line constitutes the negative electrode of battery, and electric current converges on the main grid line and derives.When utilizing screen printing technique to make the positive gate electrode of existing secondary grid line distribution pattern, owing to may produce broken string in the positive gate electrode printing process or print incomplete, the secondary grid line that may cause when perhaps carrying out follow-up making assembly damages, the charge carrier that secondary grid line breakage is collected can not arrive on the main grid line smoothly, cause the waste of light-receiving area, thereby reduced the effective area of battery, made the battery series resistance increase and conversion efficiency decline.
The utility model content
The purpose of this utility model is to provide a kind of positive gate electrode of solar cell, to solve that secondary grid line breakage is collected in the prior art charge carrier can not arrive the main grid line smoothly and the problem that causes the light-receiving area waste.
The utility model provides a kind of positive gate electrode of solar cell, and described positive gate electrode is distributed in the solar battery sheet surface, and described positive gate electrode comprises main grid line and the secondary grid line that is connected with described main grid line, and described secondary grid line is net distribution.
Preferably, described secondary grid line is made up of the parallel lines of two sets intersect.
Preferably, described secondary grid line and the folded angle of described main grid line greater than 0 ° less than 90 °, described secondary grid line and the folded angle of described main grid line greater than 90 ° less than 180 °.
Preferably, the secondary grid line in the zone that is separated by described main grid line is separate.
Preferably, the secondary grid line in the zone that is separated by described main grid line interconnects.
Preferably, described main grid line is two parallel lines or three parallel lines.
Preferably, described secondary grid line live width is 1 μ m to 250 μ m.
Preferably, the vertical range between two adjacent parallel secondary grid lines is 1 μ m to 20000 μ m.
Preferably, described positive gate electrode around be provided with the frame grid line.
Owing to adopted above technical scheme, compared with prior art, the utlity model has following advantage:
The positive gate electrode of the solar cell that the utility model provides, secondary grid line is net distribution on the solar battery sheet surface, make each regional photo-generated carrier of solar battery sheet surface all have mulitpath to arrive the main grid line, when there is broken string in secondary grid line somewhere or prints not full-time, the secondary grid line that is communicated with the main grid line that photo-generated carrier can close on by this place of solar cell surface is finished and is collected and transmission, avoids the decline of battery efficiency.The secondary grid line that is net distribution makes the path of collecting photo-generated carrier become many, and the corresponding series resistance that reduced has increased electricity conversion.In addition, secondary grid line is net distribution and has evenly disperseed stress distribution, and the fragment rate that has improved the flexural deformation of solar cell to a certain extent and reduced solar cell has improved the qualification rate of solar cell.Compare with conventional solar cell; the manufacture craft of the positive gate electrode of the solar cell that the utility model provides is simple; need not to purchase novel device, can not increase extra cost, the technology of various types of solar cells and various making gate electrodes is all had the large-scale production feature.
Description of drawings
After having read embodiment of the present utility model with reference to accompanying drawing, will become apparent various aspects of the present utility model.Wherein,
The distributed architecture schematic diagram of the positive gate electrode of the solar cell that Fig. 1 provides for the utility model embodiment one;
The distributed architecture schematic diagram of the positive gate electrode of the solar cell that Fig. 2 provides for the utility model embodiment two.
Embodiment
With reference to the accompanying drawings, embodiment of the present utility model is described in further detail.In whole description, identical Reference numeral is represented identical parts.
The positive gate electrode of the solar cell that the utility model provides, secondary grid line is net distribution on the solar battery sheet surface, make each regional photo-generated carrier of solar battery sheet surface all have mulitpath to arrive the main grid line, when there is broken string in secondary grid line somewhere or prints not full-time, the secondary grid line that is communicated with the main grid line that photo-generated carrier can close on by this place of solar cell surface is finished and is collected and transmission, avoids the decline of battery efficiency.The secondary grid line that is net distribution makes the path of collecting photo-generated carrier become many, and the corresponding series resistance that reduced has increased electricity conversion.In addition, secondary grid line is net distribution and has evenly disperseed stress distribution, and the fragment rate that has improved the flexural deformation of solar cell to a certain extent and reduced solar cell has improved the qualification rate of solar cell.
Embodiment one
The distributed architecture schematic diagram of the positive gate electrode of the solar cell that Fig. 1 provides for the utility model embodiment one.With reference to Fig. 1, the positive gate electrode of solar cell is distributed in the surface of solar battery sheet 10, and described positive gate electrode comprises main grid line 11 and the secondary grid line 12 that is connected with described main grid line 11, and described secondary grid line 12 is net distribution.
Particularly, described secondary grid line 12 is made up of the parallel lines of two sets intersect, described secondary grid line 12 with described main grid line 11 folded angles greater than 0 ° less than 90 °, described secondary grid line 12 with described main grid line 11 folded angles greater than 90 ° less than 180 °.The scope of described secondary grid line 12 live widths is 1 μ m to 250 μ m, and the vertical range between two adjacent parallel secondary grid lines is 1 μ m to 20000 μ m.
The making positive gate electrode can adopt the method for any making electrodes such as silk screen printing, evaporation, sputter, plating, spraying, in the present embodiment, adopts the mode of silk screen printing to make positive gate electrode.Before making positive gate electrode, at first choose the p type single crystal silicon sheet that is up to the standards, specification is 125mm * 125mm, and process chemical cleaning and surface wool manufacturing are to form pyramid structure on monocrystalline silicon piece, increase the absorption of light, improve the short circuit current and the conversion efficiency of battery; Utilize technologies such as High temperature diffusion or ion injection on the p type single crystal silicon sheet, to produce the crystal silicon layer of N type again, so just, formed the P-N junction structure, remove the diffusion layer at edge then through plasma etching, remove the phosphorosilicate glass layer that diffuses to form by chemical corrosion, the deposit silicon nitride anti-reflection film, described silicon nitride anti-reflection film can reduce the light reflectivity of silicon chip surface, utilizes hydrionic one-tenth key to strengthen silicon chip surface and the interior passivation effect of body simultaneously, reduces the compound of charge carrier; Utilize silk screen printing to make backplate and positive gate electrode at last.
Adopt silk screen printing to make the structural parameters that positive gate electrode need design main grid line 11 and secondary grid line 12.In the present embodiment, described main grid line 11 is two parallel lines, and the live width of two main grid lines 11 is 1.5mm, and mutual spacing is 62.5mm.For explaining conveniently, two main grid lines 11 are called the first main grid line 11a and the second main grid line 11b, secondary grid line with first main grid line 11a left side is called first group of secondary grid line 12a successively, secondary grid line is called second group of secondary grid line 12b between the first main grid line 11a and the second main grid line 11b, the secondary grid line on the second main grid line 11b right side is called the 3rd group of secondary grid line 12c, wherein, the intersecting lens that first group of secondary grid line 12a comprised is respectively 65.7 ° and 114.3 ° with the angle of the first main grid line 11a, and the distance between two groups of parallel lines that first group of pair grid line 12a comprised is 4.64mm; The intersecting lens that second group of secondary grid line 12b comprised is respectively 62.8 ° and 117.2 ° with the angle of the first main grid line 11a, and the distance between two groups of parallel lines that second group of pair grid line 12b comprised is 4.52mm; The parameter of the 3rd group of secondary grid line 12c employing is identical with first group of secondary grid line 12a, does not repeat them here.Certainly, above-mentioned numerical value also is not used in qualification the utility model, those of ordinary skill in the art can set the relevant parameter of main grid line 11 according to the size of solar battery sheet 10 surface areas, and sets the relevant parameter of secondary grid line 12 according to the relevant parameter of the size of solar battery sheet 10 surface areas and main grid line 11.In addition, the designed in the present embodiment main grid line 11 and the parameter of secondary grid line 12, be identical with the shared gross area of existing conventional 125mm * all grid lines of 125mm solar battery sheet in order to guarantee, therefore the gate electrode noble metal cost that can not cause increases and the variation of effective light transmission area.
Further, in the present embodiment, described first group of secondary grid line 12a and second group of secondary grid line 12b intersect, and described joining is positioned on the described first main grid line 11a; Described second group of secondary grid line 12b and the 3rd group of secondary grid line 12c intersect with the described second main grid line 11b respectively, but described second group of secondary grid line 12b and the 3rd group of secondary grid line 12c do not have joining, and be separate.Will be understood by those skilled in the art that, described first group of secondary grid line 12a, described second group of secondary grid line 12b and the 3rd group of secondary grid line 12c not only are confined to above-mentioned distribution form, can also be that described first group of secondary grid line 12a and second group of secondary grid line 12b intersect with the described first main grid line 11a respectively, but described first group of secondary grid line 12a and second group of secondary grid line 12b do not have joining, and be separate; Perhaps described second group of secondary grid line 12b and the 3rd group of secondary grid line 12c intersect, and described joining is positioned on the described second main grid line 11b.
Secondary grid line 12 is net distribution on solar battery sheet 10 surfaces, make solar battery sheet 10 each regional photo-generated carrier of surface all have mulitpath to arrive main grid line 11, when there is broken string in secondary grid line 12 somewheres or prints not full-time, the secondary grid line 12 that is communicated with main grid line 11 that photo-generated carrier can close on by this place of solar cell surface is finished and is collected and transmission, avoids the decline of battery efficiency.
Embodiment two
The distributed architecture schematic diagram of the positive gate electrode of the solar cell that Fig. 2 provides for the utility model embodiment two.With reference to Fig. 2, different with embodiment one is, the main grid line 21 that solar battery sheet 20 surfaces are comprised is three parallel lines, and the live width of three main grid lines 21 is 1.6mm, and the distance between the main grid line 21 is 52mm.For explaining conveniently, three main grid lines 21 are called the first main grid line 21a, the second main grid line 21b and the 3rd main grid line 21c, successively the secondary grid line in first main grid line 21a left side is called between first group of secondary grid line 22a, first main grid line 21a and the second main grid line 21b secondary grid line and is called that secondary grid line is called the 3rd group of secondary grid line 22c between second group of secondary grid line 22b, second main grid line 21b and the 3rd main grid line 21c, the secondary grid line on the 3rd main grid line 21c right side is called the 4th group of secondary grid line 22d.In the present embodiment, for the reliability that guarantees secondary grid line 22 electrodes connects, around positive gate electrode, be provided with frame grid line 23.
Further, in the present embodiment, described first group of secondary grid line 22a and described second group of secondary grid line 22b intersect, and described joining is positioned on the described first main grid line 21a; Described second group of secondary grid line 22b and described the 3rd group of secondary grid line 22c intersect, and described joining is positioned on the described second main grid line 21b; Described the 3rd group of secondary grid line 22c and the 4th group of secondary grid line 22d intersect, and described joining is positioned on described the 3rd main grid line 21c.Will be understood by those skilled in the art that, described first group of secondary grid line 22a, described second group of secondary grid line 22b and described the 3rd group of secondary grid line 22c not only are confined to the form of above-mentioned distribution, also can be that all first group of secondary grid line 22a as described and described second group of secondary grid line 22b intersect with the described first main grid line 21a respectively, but described first group of secondary grid line 22a and described second group of secondary grid line 22b do not have joining, and be separate; Perhaps described second group of secondary grid line 22b and described the 3rd group of secondary grid line 22c intersect with the described second main grid line 21b respectively, but described second group of secondary grid line 22b and described the 3rd group of secondary grid line 22c do not have joining, and be separate; Perhaps described the 3rd group of secondary grid line 22c and the 4th group of secondary grid line 22d intersect with described the 3rd main grid line 21c respectively, but described the 3rd group of secondary grid line 22c and the 4th group of secondary grid line 22d do not have joining, separate distribution form.
In the present embodiment, the material of described solar cell is a polysilicon, and the specification of polysilicon chip is 156mm * 156mm.Will be understood by those skilled in the art that the material of described solar cell can be monocrystalline silicon, polysilicon, can also be organic semiconductor, nano material, low-dimensional materials etc.
In sum, the positive gate electrode of the solar cell that the utility model provides, secondary grid line is net distribution on the solar battery sheet surface, make each regional photo-generated carrier of solar battery sheet surface all have mulitpath to arrive the main grid line, when there is broken string in secondary grid line somewhere or prints not full-time, the secondary grid line that is communicated with the main grid line that photo-generated carrier can close on by this place of solar cell surface is finished and is collected and transmission, avoids the decline of battery efficiency.The secondary grid line that is net distribution makes the path of collecting photo-generated carrier become many, and the corresponding series resistance that reduced has increased electricity conversion.In addition, secondary grid line is net distribution and has evenly disperseed stress distribution, and the fragment rate that has improved the flexural deformation of solar cell to a certain extent and reduced solar cell has improved the qualification rate of solar cell.Compare with conventional solar cell; the manufacture craft of the positive gate electrode of the solar cell that the utility model provides is simple; need not to purchase novel device, can not increase extra cost, the technology of various types of solar cells and various making gate electrodes is all had the large-scale production feature.
Above, describe embodiment of the present utility model with reference to the accompanying drawings.But those skilled in the art can understand, and under the situation that does not depart from spirit and scope of the present utility model, can also do various changes and replacement to embodiment of the present utility model.These changes and replacement all drop in the utility model claims institute restricted portion.
Claims (9)
1. the positive gate electrode of a solar cell, described positive gate electrode is distributed in the solar battery sheet surface, and described positive gate electrode comprises main grid line and the secondary grid line that is connected with described main grid line, it is characterized in that, and described secondary grid line is net distribution.
2. the positive gate electrode of solar cell as claimed in claim 1 is characterized in that, described secondary grid line is made up of the parallel lines of two sets intersect.
3. the positive gate electrode of solar cell as claimed in claim 1 is characterized in that, described secondary grid line and the folded angle of described main grid line greater than 0 ° less than 90 °, described secondary grid line and the folded angle of described main grid line greater than 90 ° less than 180 °.
4. the positive gate electrode of solar cell as claimed in claim 1 is characterized in that, the secondary grid line in the zone that is separated by described main grid line is separate.
5. the positive gate electrode of solar cell as claimed in claim 1 is characterized in that, the secondary grid line in the zone that is separated by described main grid line interconnects.
6. as the positive gate electrode of each solar cell in the claim 1 to 5, it is characterized in that described main grid line is two parallel lines or three parallel lines.
7. as the positive gate electrode of each solar cell in the claim 1 to 5, it is characterized in that described secondary grid line live width is 1 μ m to 250 μ m.
8. as the positive gate electrode of each solar cell in the claim 1 to 5, it is characterized in that the vertical range between two adjacent parallel secondary grid lines is 1 μ m to 20000 μ m.
9. as the positive gate electrode of each solar cell in the claim 1 to 5, it is characterized in that, be provided with the frame grid line around the described positive gate electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200785780U CN202049959U (en) | 2011-03-23 | 2011-03-23 | Right side gate electrode of solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200785780U CN202049959U (en) | 2011-03-23 | 2011-03-23 | Right side gate electrode of solar cell |
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| CN202049959U true CN202049959U (en) | 2011-11-23 |
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| CN2011200785780U Expired - Fee Related CN202049959U (en) | 2011-03-23 | 2011-03-23 | Right side gate electrode of solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103840017A (en) * | 2014-03-06 | 2014-06-04 | 常熟理工学院 | Grapheme silicon-based solar cell and manufacture method thereof |
| CN109075217A (en) * | 2016-03-30 | 2018-12-21 | 法布里齐奥·奇亚拉 | For covering the method and the photovoltaic surface that manufactures by this method of photovoltaic surface |
-
2011
- 2011-03-23 CN CN2011200785780U patent/CN202049959U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103840017A (en) * | 2014-03-06 | 2014-06-04 | 常熟理工学院 | Grapheme silicon-based solar cell and manufacture method thereof |
| CN103840017B (en) * | 2014-03-06 | 2016-06-08 | 常熟理工学院 | A kind of Graphene silica-based solar cell and manufacture method thereof |
| CN109075217A (en) * | 2016-03-30 | 2018-12-21 | 法布里齐奥·奇亚拉 | For covering the method and the photovoltaic surface that manufactures by this method of photovoltaic surface |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111123 Termination date: 20170323 |