CN207705207U - Full back-contact heterojunction solar battery - Google Patents
Full back-contact heterojunction solar battery Download PDFInfo
- Publication number
- CN207705207U CN207705207U CN201820147910.6U CN201820147910U CN207705207U CN 207705207 U CN207705207 U CN 207705207U CN 201820147910 U CN201820147910 U CN 201820147910U CN 207705207 U CN207705207 U CN 207705207U
- Authority
- CN
- China
- Prior art keywords
- back surface
- surface field
- amorphous silicon
- intrinsic amorphous
- silicon layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a kind of full back-contact heterojunction solar batteries comprising monocrystalline silicon piece, the first intrinsic amorphous silicon layer, the second intrinsic amorphous silicon layer, antireflective coating, the first back surface field, the second back surface field, emitter and positive and negative electrode；Wherein, first intrinsic amorphous silicon layer is arranged in the front of monocrystalline silicon piece, second intrinsic amorphous silicon layer is arranged at the back side of monocrystalline silicon piece, antireflective coating is arranged in the first intrinsic amorphous silicon layer, first back surface field is arranged on the second intrinsic layer, emitter is arranged between the second intrinsic layer and the second back surface field, and insulation set between the back surface field of emitter/second and the first back surface field, electrode is arranged in the first back surface field and the second back surface field.Full back-contact heterojunction solar battery provided by the utility model inherently avoids the positive grid line of monocrystalline silicon piece and blocks the current gain, it can be achieved that 4.5% or more to incident ray, effectively improves the photoelectric conversion efficiency of heterojunction solar battery.
Description
Technical field
The utility model is related to technical field of solar batteries more particularly to a kind of full back-contact heterojunction solar electricity
Pond.
Background technology
Heterojunction solar battery have high efficiency, high stability, low-temperature coefficient, can generating electricity on two sides and cost decline
The advantages that space is big is expected to as following one of the mainstream photovoltaic technology.
Heterojunction solar battery in the prior art generally includes amorphous silicon membrane, transparent conductive film layer (TCO), grid line
Electrode etc., and since amorphous silicon membrane, tco layer are to the reasons such as block of the absorption of incident sunlight and front gate line, it influences
The further promotion of this kind of structure solar cell short-circuit current density.
Utility model content
The purpose of this utility model is to provide a kind of full back-contact heterojunction solar battery, to solve above-mentioned existing skill
The problems in art promotes the short-circuit current density of battery, promotes cell power generation efficiency.
The utility model provides a kind of full back-contact heterojunction solar battery, wherein including：
Monocrystalline silicon piece；
Positive first intrinsic amorphous silicon layer in the monocrystalline silicon piece is set；
The second intrinsic amorphous silicon layer at the back side of the monocrystalline silicon piece is set；
Antireflection film layer in first intrinsic amorphous silicon layer is set；
Emitter in second intrinsic amorphous silicon layer and the first back surface field, the emitter and first back of the body are set
Insulation set between；
The second back surface field being arranged on the emitter, insulation set between second back surface field and first back surface field；
Electrode in first back surface field and second back surface field is set.
Full back-contact heterojunction solar battery as described above, wherein preferably, the monocrystalline silicon piece is N-type
Monocrystalline silicon piece.
Full back-contact heterojunction solar battery as described above, wherein preferably, first intrinsic amorphous silicon
Layer and second intrinsic amorphous silicon layer are intrinsic amorphous silicon film or intrinsic amorphous silicon oxygen alloy film.
Full back-contact heterojunction solar battery as described above, wherein preferably, the electrode is silver-colored gate electrode
Or copper electrode.
Full back-contact heterojunction solar battery as described above, wherein preferably, the transmitting extremely p-type is non-
Polycrystal silicon film or p-type microcrystalline silicon film.
Full back-contact heterojunction solar battery provided by the utility model inherently avoids monocrystalline silicon piece front
Grid line the current gain, it can be achieved that 4.5% or more is blocked to incident ray, effectively improve heterojunction solar battery
Photoelectric conversion efficiency.
Description of the drawings
Specific embodiment of the present utility model is described in further detail below in conjunction with the accompanying drawings.
Fig. 1 is the structural schematic diagram for the full back-contact heterojunction solar battery that the utility model embodiment provides；
Fig. 2 is to the second area in the second intrinsic amorphous silicon layer into the state diagram of line mask；
Fig. 3 is the state diagram after forming back surface field；
Fig. 4 is that the state diagram after groove is formed in back surface field.
Reference sign：
100- monocrystalline silicon pieces the first intrinsic amorphous silicon layers of 200-
300- antireflection film layers the second intrinsic amorphous silicon layers of 400-
500- emitter 600- back surface fields
610- the first back surface field the second back surface fields of 620-
700- electrode 800- grooves
900- mask plates
Specific implementation mode
The embodiments of the present invention are described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning
Same or similar element or element with the same or similar functions are indicated to same or similar label eventually.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and is only used for explaining the utility model, and cannot be construed to the utility model
Limitation.
As shown in Figure 1, the utility model embodiment provides a kind of full back-contact heterojunction solar battery comprising
Monocrystalline silicon piece 100, the first intrinsic amorphous silicon layer 200, the second intrinsic amorphous silicon layer 400, antireflection film layer 300, emitter 500,
First back surface field 610, the second back surface field 620 and positive and negative electrode 700；Wherein, the first intrinsic amorphous silicon layer 200 is arranged in monocrystalline silicon piece
100 front, the second intrinsic amorphous silicon layer 400 are arranged at the back side of monocrystalline silicon piece 100, and antireflection film layer 300 is arranged first
In intrinsic amorphous silicon layer 200, the first back surface field 610 and emitter 500 are arranged in the second intrinsic amorphous silicon layer 400, second back of the body
Field 620 is arranged on emitter 500, and insulation set between 500/ second back surface field 620 of emitter and the first back surface field 610, electrode
700 are arranged in the first back surface field 610 and the second back surface field 620.
Wherein, emitter 500 and the second back surface field 620 are the silica-base film of high-dopant concentration, in emitter 500 and second
The contact surface of back surface field 620 forms NP tunnel junctions, it is possible thereby to be directly realized by the transmission in hole.What the utility model embodiment provided
Full back-contact heterojunction solar battery, inherently avoids screening of the 100 positive grid line of monocrystalline silicon piece to incident ray
The current gain, it can be achieved that 4.5% or more is kept off, the photoelectric conversion efficiency of heterojunction solar battery is effectively improved.
In order to make heterojunction solar battery obtain higher photoelectric conversion efficiency, monocrystalline silicon piece 100 can be N-type monocrystalline
Silicon chip.
It should be noted that in order to improve the passivation effect to 100 surface of monocrystalline silicon piece, improves device and integrally lack the sub- longevity
Life, the first intrinsic amorphous silicon layer 200 and the second intrinsic amorphous silicon layer 400 all can be intrinsic amorphous silicon film (a-Si:H) or originally
Levy non-crystalline silicon oxygen alloy film (a-SiOx:H), it is possible thereby to improve open-circuit voltage, to improve the transfer efficiency of battery.It is preferred that
, the first intrinsic amorphous silicon layer 200 and the second intrinsic amorphous silicon layer 400 are intrinsic amorphous silicon film.
It is understood that in order to make electrode 700 obtain preferable electric conductivity, in the present embodiment, electrode 700 can be with
For silver-colored gate electrode or copper electrode.
Emitter 500 can be P-type non-crystalline silicon film or p-type microcrystalline silicon film, to improve the open-circuit voltage of battery, in turn
Improve the transfer efficiency of battery, it is preferred that emitter 500 is p-type microcrystalline silicon film.
Antireflective coating 300 can be SiOx、SiNx、Ta2O5、TiO2In one kind, effect mainly by lower the sun
Light battery surface reflection loss, to increase the light absorption of battery.Preferably, antireflective coating 300 can have surface blunt
The effect of change.
Preparation for the full back-contact heterojunction solar battery can be realized by following steps：
S100, the first intrinsic amorphous silicon layer 200 is formed in the front of monocrystalline silicon piece 100.
S200, antireflection film layer 300 is formed in the first intrinsic amorphous silicon layer 200.
S300, the second intrinsic amorphous silicon layer 400 is formed at the back side of monocrystalline silicon piece 100.
Emitter 500 is formed in S400, the first area in the second intrinsic amorphous silicon layer 400, as shown in Figure 2.
Shape on S500, other regions in addition to first area in the second intrinsic amorphous silicon layer 400 and emitter 500
At back surface field 600, as shown in Figure 3, wherein in the present embodiment, other regions in addition to first area can be second area,
First area and second area can be spaced setting.
S600, in back surface field 600 formed groove 800, by first area emitter 500 and emitter 500 on
Back surface field with and second area on back surface field insulation, as shown in Figure 4.
S700, electrode 700 is formed in back surface field 600.
Further, as shown in Fig. 2, further including before step S400：
S40, to second area into line mask.Due to being in the second intrinsic amorphous silicon layer 400 when forming emitter 500
It carries out on all surfaces, still, in order to simplify technique, avoids because being formed on all surfaces of the second intrinsic amorphous silicon layer 400
Emitter 500 after, it is also necessary to by non-emissive pole 500 on the second intrinsic amorphous silicon 400 by way of chemical attack or delineation
Region carries out membrane removal.But for this preparation method, the second intrinsic amorphous is easily caused during chemical attack and delineation
The damage of silicon layer 400, while can not also ensure the precision controlling removed to emitter 500.It, can be with for this purpose, in the present embodiment
To second area into line mask before forming emitter 500, to prevent emitter 500 to be covered in second area, so as to
Retain second area while forming emitter 500, while also simplifying technique.
It wherein, can be by the way that mask plate 900 be arranged to be carried out to second area in second area for the ease of masking operations
Mask after emitter 500 to be formed, can remove mask plate 900.
It should be noted that plasma enhanced chemical vapor deposition method (PECVD) or Hot Filament Chemical Vapor can be passed through
Sedimentation (HWCVD) forms the first intrinsic amorphous silicon layer 200, the second intrinsic amorphous silicon layer 400, antireflection film layer 300 and hair
Emitter-base bandgap grading 500.
Specifically, step S600 is specifically included：
Groove 800 is formed in back surface field 600 by way of mechanical scratching or laser grooving and scribing, by emitter 500, transmitting
Back surface field on pole 500 insulate with the first back surface field 610 respectively.
Preparation for electrode 700 can be realized by silk-screen printing technique or electroplating technology, in the present embodiment,
Preferably, electrode 700 is prepared by silk-screen printing technique.
It further, can be to monocrystalline silicon before the front of monocrystalline silicon piece 100 forms the first intrinsic amorphous silicon layer 200
Piece 100 carries out making herbs into wool cleaning.The purpose of making herbs into wool is to produce the suede structure that can reduce surface sun light reflection, effective suede
Face structure enables to incident light in silicon chip surface multiple reflections and refraction, increases the absorption of light, reduces reflectivity, helps
In the performance for improving battery.The purpose of cleaning is the clean journey that eliminate each pollutant for being adsorbed on silicon chip surface, and clean
Degree directly affects the yield rate and reliability of cell piece, promotes the whole minority carrier life time of device, promotes battery open circuit voltage.
The full back-contact heterojunction solar battery and preparation method thereof that the utility model embodiment provides, inherently
It avoids the positive grid line of monocrystalline silicon piece and the current gain, it can be achieved that 4.5% or more is blocked to incident ray, effectively improve
The photoelectric conversion efficiency of heterojunction solar battery.
The structure, feature and effect of the utility model are described in detail based on the embodiments shown in the drawings, with
Upper described is only the preferred embodiment of the utility model, but the utility model is to limit practical range shown in drawing, it is every according to
Change made by conception according to the utility model, or be revised as the equivalent embodiment of equivalent variations, still without departing from specification and figure
When showing covered spirit, it should be within the protection scope of the present utility model.
Claims (5)
1. a kind of full back-contact heterojunction solar battery, which is characterized in that including：
Monocrystalline silicon piece；
Positive first intrinsic amorphous silicon layer in the monocrystalline silicon piece is set；
The second intrinsic amorphous silicon layer at the back side of the monocrystalline silicon piece is set；
Antireflection film layer in first intrinsic amorphous silicon layer is set；
Emitter in second intrinsic amorphous silicon layer and the first back surface field be set, the emitter and first back surface field it
Between insulation set；
The second back surface field being arranged on the emitter, insulation set between second back surface field and first back surface field；
Electrode in first back surface field and second back surface field is set.
2. full back-contact heterojunction solar battery according to claim 1, which is characterized in that the monocrystalline silicon piece is
N type single crystal silicon piece.
3. full back-contact heterojunction solar battery according to claim 1, which is characterized in that described first is intrinsic non-
Crystal silicon layer and second intrinsic amorphous silicon layer are intrinsic amorphous silicon film or intrinsic amorphous silicon oxygen alloy film.
4. full back-contact heterojunction solar battery according to claim 1, which is characterized in that the electrode is silver-colored grid
Electrode or copper electrode.
5. full back-contact heterojunction solar battery according to claim 1, which is characterized in that the transmitting extremely P
Type amorphous silicon membrane or p-type microcrystalline silicon film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820147910.6U CN207705207U (en) | 2018-01-29 | 2018-01-29 | Full back-contact heterojunction solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820147910.6U CN207705207U (en) | 2018-01-29 | 2018-01-29 | Full back-contact heterojunction solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207705207U true CN207705207U (en) | 2018-08-07 |
Family
ID=63031648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820147910.6U Active CN207705207U (en) | 2018-01-29 | 2018-01-29 | Full back-contact heterojunction solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207705207U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461554A (en) * | 2018-01-29 | 2018-08-28 | 君泰创新（北京）科技有限公司 | Full back-contact heterojunction solar battery and preparation method thereof |
-
2018
- 2018-01-29 CN CN201820147910.6U patent/CN207705207U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461554A (en) * | 2018-01-29 | 2018-08-28 | 君泰创新（北京）科技有限公司 | Full back-contact heterojunction solar battery and preparation method thereof |
| WO2019144611A1 (en) * | 2018-01-29 | 2019-08-01 | 君泰创新（北京）科技有限公司 | Heterojunction solar cell and preparation method therefor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101000064B1 (en) | Hetero-junction silicon solar cell and fabrication method thereof | |
| CN109244194B (en) | Preparation method of low-cost P-type full back electrode crystalline silicon solar cell | |
| CN103489934B (en) | Local aluminum back surface field solar cell of a kind of transparent two sides and preparation method thereof | |
| WO2016078365A1 (en) | High-efficiency n-type double-sided solar cell | |
| CN102623517B (en) | Back contact type crystalline silicon solar cell and production method thereof | |
| CN102738304B (en) | Method for manufacturing back electrode of crystalline silicon solar cell by using local aluminum back surface field structure | |
| CN102751371B (en) | Solar thin film battery and manufacturing method thereof | |
| US11961930B2 (en) | Crystalline silicon solar cell and preparation method therefor, and photovoltaic assembly | |
| CN209232797U (en) | Silica-based solar cell and photovoltaic module | |
| CN102403369A (en) | Passivation dielectric film for solar cell | |
| CN108461554A (en) | Full back-contact heterojunction solar battery and preparation method thereof | |
| CN107068798B (en) | Back contacts heterojunction solar battery and preparation method thereof | |
| CN110034193A (en) | A kind of how thin grid IBC battery of Topcon passivating structure and preparation method thereof | |
| CN111613688A (en) | Interdigital back contact solar cell structure and manufacturing method thereof | |
| CN107104165A (en) | One kind is based on graphene silicon inverted pyramid array Schottky photovoltaic cell manufacture method | |
| CN102214719A (en) | Back contact heterojunction solar battery based on N-type silicon slice | |
| CN102214720B (en) | Back contact heterojunction solar battery based on P-type silicon slice | |
| CN210956694U (en) | Back passivation solar cell structure | |
| CN207705207U (en) | Full back-contact heterojunction solar battery | |
| CN110047949A (en) | A kind of hetero-junctions back contact solar cell and preparation method thereof | |
| CN115528136A (en) | Back contact battery, manufacturing method thereof, battery assembly and photovoltaic system | |
| CN210403753U (en) | Interdigital back contact solar cell structure | |
| CN103646974B (en) | A kind of high power concentrator silicon solar cell and preparation method thereof | |
| CN104282772A (en) | Positive electrode solar crystalline silicon battery with four main grid lines | |
| Pengcheng et al. | Characteristics and development of interdigital back contact solar cells |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20181214 Address after: 610200 China (Sichuan) Free Trade Pilot Zone, Chengdu City, Sichuan Province, No. 2002, Airport No. 4 Road, Southwest Airport Economic Development Zone, Shuangliu District, Chengdu City Patentee after: Chengdu Everest Yongming Technology Co., Ltd. Address before: 100176 Beijing Daxing District Beijing Economic and Technological Development Zone, No. 66 Building, No. 2 Jingyuan North Street, 7th Floor 805 Patentee before: Thai innovation (Beijing) Technology Co. Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210106 Address after: 101102 102-lq307, 1-3 / F, building 26, 17 huanke Middle Road, Jinqiao Science and technology industrial base, Tongzhou Park, Zhongguancun Science and Technology Park, Tongzhou District, Beijing Patentee after: Deyun Chuangxin (Beijing) Technology Co.,Ltd. Address before: 610200 China (Sichuan) Free Trade Pilot Zone, Chengdu City, Sichuan Province, No. 2002, Airport No. 4 Road, Southwest Airport Economic Development Zone, Shuangliu District, Chengdu City Patentee before: Chengdu Everest Yongming Technology Co.,Ltd. |
|
| TR01 | Transfer of patent right |