CN102214719A - Back contact heterojunction solar battery based on N-type silicon slice - Google Patents
Back contact heterojunction solar battery based on N-type silicon slice Download PDFInfo
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- CN102214719A CN102214719A CN2011101550236A CN201110155023A CN102214719A CN 102214719 A CN102214719 A CN 102214719A CN 2011101550236 A CN2011101550236 A CN 2011101550236A CN 201110155023 A CN201110155023 A CN 201110155023A CN 102214719 A CN102214719 A CN 102214719A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 47
- 239000010703 silicon Substances 0.000 title claims abstract description 47
- 239000013078 crystal Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 66
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 35
- 239000012528 membrane Substances 0.000 claims description 17
- 239000006117 anti-reflective coating Substances 0.000 claims description 15
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910017911 MgIn Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 238000009766 low-temperature sintering Methods 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 230000003595 spectral effect Effects 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 description 29
- 239000010408 film Substances 0.000 description 22
- 230000000694 effects Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 238000002161 passivation Methods 0.000 description 5
- 239000002002 slurry Substances 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
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Abstract
The invention relates to a solar battery, in particular to a back contact heterojunction solar battery based on an N-type silicon slice. According to a back face feature, the back contact heterojunction solar battery is divided into an N-type region and a P-type region, wherein the N-type region forms an N+a-si/i-a-si/N-c-si/N+c-si heterojunction structure; and the P-type region forms an N+a-si/i-a-si/N-c-si/N+c-si/i-a-si/P-a-si heterojunction structure. In the solar battery, the light attenuation phenomenon of the conventional P-type crystal silicon solar battery can be avoided; the solar battery has higher spectral response; the thickness of the solar battery is greatly reduced compared with that of the conventional crystal silicon solar battery; electrodes are all printed on the back face of the battery, so the problem that the front electrode of the conventional solar battery blocks light is solved; therefore, the conversion efficiency of the solar battery is improved greatly; by a low-temperature sintering process, a production process is simplified greatly and production cost is reduced; and the solar battery is applicable to industrialized production.
Description
Technical field
The present invention relates to a kind of solar cell, be specifically related to a kind of back of the body contact heterojunction solar cell based on N type silicon chip.
Background technology
21st century, energy crisis and environmental pollution have become the global problems that need to be resolved hurrily.The exploitation green energy resource becomes the main method that solves crisis.Wherein solar cell because of its cleaning, safety, renewablely become the target that countries in the world are competitively developed.The main developing direction of solar cell is to reduce cost, increase efficient at present.
That the heterojunction solar cell that novel amorphous silicon and crystal silicon constitute has is simple in structure, technology is simple and easy, it has the high carrier mobility advantage with crystalline silicon and combine with low temperature chemical vapor deposition amorphous silicon technology advantage, becomes the focus developing direction of solar energy industry.As the exploitation of Japanese three sanyo groups be that the HIT battery laboratory dress of substrate changes efficient and broken through 22% with N type crystalline silicon, industrialization battery sheet transformation efficiency reaches 19%.
There is following problem in the solar cell of HIT structure at present: the defective of first amorphous silicon membrane is more, has increased the charge carrier complex defect density in the thin-film body, influences the collection and the transmission of photogenerated current; The grid line design in second front is that the battery light-receiving area reduces, thereby reduces short circuit current, influences the final transformation efficiency of solar cell.
Summary of the invention
Purpose of the present invention is exactly to provide a kind of back of the body contact heterojunction solar cell based on N type silicon chip at the defective of above-mentioned existence.Conventional P type crystal silicon solar battery photo attenuation phenomenon can not appear in solar cell of the present invention, and spectral response is better, and sunlight is propagated light path in battery longer, and the more conventional crystal silicon solar battery thickness of battery is attenuate greatly; Electrode all is printed on cell backside, has promptly avoided the problem of conventional solar cell front electrode shading, has also improved the solar cell short circuit current, improves the transformation efficiency of solar cell greatly; Low temperature sintering technology is simplified production technology greatly, is reduced production costs, and is applicable to industrialization production.
The technical solution used in the present invention is, a kind of back of the body contact heterojunction solar cell based on N type silicon chip, be divided into N type zone and p type island region territory from back side feature, N type zone comprises from top to bottom sensitive surface antireflective coating, N+ a-Si N+ amorphous silicon membrane, i-a-Si intrinsic amorphous silicon film, N-C-Si N type crystalline silicon, N+ c-Si N+ crystal silicon layer, transparent conductive film TCO and the back electrode of lamination combination successively, forms N+ a-si/ i-a-si/N-c-si/N+c-si heterojunction structure; The p type island region territory comprises from top to bottom sensitive surface antireflective coating, N+ a-Si N+ amorphous silicon membrane, i-a-Si intrinsic amorphous silicon film, N-C-Si N type crystalline silicon, N+ c-Si N+ crystal silicon layer, i-a-Si intrinsic amorphous silicon film, P-a-Si amorphous silicon membrane, transparent conductive film TCO and the back electrode of lamination combination successively, forms N+ a-si/ i-a-si/N-c-si/N+c-si/i-a-si/P-a-si heterojunction structure.
Described sensitive surface antireflective coating is SiO
2, Si
3N
4, Ta
2O
5Or TiO
2, antireflective coating thickness is 70 ~ 90nm, refractive index is 1.5 ~ 2.5.
Adopt chemical vapor deposition method to make the intrinsic amorphous silicon film on N type crystalline silicon and below the N+ crystal silicon layer in p type island region territory, thickness is 1 ~ 50nm.
Described N type crystalline silicon is monocrystalline silicon, solar level or levels of metal polysilicon, banded silicon, and its thickness is 120 ~ 220um, and doping content is 1 * 10
15～5 * 10
17/ cm
3
The N of described N type crystalline silicon lower floor
+Type crystal silicon layer, its thickness are 0.1 ~ 0.5um, and dense phosphorus doping density is 1 * 10
18～5 * 10
20/ cm
3
In the described p type island region territory, the P-a-Si amorphous silicon membrane adopts chemical vapor deposition method to deposit one deck below the intrinsic amorphous silicon film, and thickness is 1 ~ 50nm.
Transparent conductive film TCO is an oxidic transparent electric conducting material system, is In
2O
3, SnO
2, ZnO, In
2O
3: Sn (ITO), In
2O
3: Mo (IMO), SnO
2: Sb (ATO), SnO
2: F (FTO), ZnO:Al (ZnO), ZnOSnO
2, ZnOIn
2O
3, CdSb
2O
6, MgIn
2O
4, In
4Sn
3O
12, Zn
2In
2O
5, CdIn
2O
4, Cd
2SnO
4, Zn
2SnO
4, GaInO
3, its thickness is 50nm ~ 900nm.
Described back electrode is Al, Ag, Au, Ni, Cu/Ni, Al/Ni or Ti/Pd/Ag electrode, and its thickness is 50nm ~ 600um.
Back of the body contact heterojunction solar cell based on N type silicon chip of the present invention has following beneficial effect: back of the body contact heterojunction solar cell one of the present invention is conventional P type crystal silicon solar battery photo attenuation phenomenon to occur; The 2nd, the low temperature manufacture craft reduces production costs; The 3rd, back-contact electrode reduces contact resistance, effectively reduces the shading rate of battery sensitive surface, thereby improves the short circuit current of solar cell, improves the transformation efficiency of solar cell greatly.The 4th, temperature coefficient is low, is fit to hot environment and uses.
Back of the body contact heterojunction solar cell based on N type silicon chip of the present invention, be divided into N type zone and p type island region territory from back side feature, N type zone comprises from top to bottom sensitive surface antireflective coating, N+ a-Si N+ amorphous silicon membrane, i-a-Si intrinsic amorphous silicon film, N-C-Si N type crystalline silicon, N+ c-Si N+ crystal silicon layer, transparent conductive film TCO and the back electrode of lamination combination successively, forms N+ a-si/ i-a-si/N-c-si/N+c-si heterojunction structure; The p type island region territory comprises from top to bottom sensitive surface antireflective coating, N+ a-Si N+ amorphous silicon membrane, i-a-Si intrinsic amorphous silicon film, N-C-Si N type crystalline silicon, N+ c-Si N+ crystal silicon layer, i-a-Si intrinsic amorphous silicon film, P-a-Si amorphous silicon membrane, transparent conductive film TCO and the back electrode of lamination combination successively, forms N+ a-si/ i-a-si/N-c-si/N+c-si/i-a-si/P-a-si heterojunction structure.Concrete effect is as follows:
Described transparent conductive film TCO has higher light transmission and conductivity, mainly plays the effect of collected current, also will reflect back through the sunlight in the cell body in addition, increases the effect of solar cell light absorption.
Adopt chemical vapor deposition method to make the intrinsic amorphous silicon film on N type crystalline silicon and below the N+ crystal silicon layer in p type island region territory, thickness is 1 ~ 50nm.Mainly play and reduce the boundary defect attitude, increase surface passivation effect.
Adopt chemical vapor deposition method to deposit one deck P-a-Si amorphous silicon membrane on the intrinsic amorphous silicon film, thickness is 1 ~ 50nm.The P-a-si amorphous silicon membrane is deposited on the i-a-si intrinsic amorphous silicon thin layer and forms core texture HIT heterojunction with N type crystal silicon battery.
Described N+ type crystal silicon layer, its thickness is 0.1 ~ 0.5um, dense phosphorus doping density is 1 * 10
18～5 * 10
20/ cm
3Effect is to form the height knot, promotes open circuit voltage, plays the effect of passivating back simultaneously.
Described antireflective coating is SiO
2, Si
3N
4, Ta
2O
5, TiO
2In a kind of, antireflective coating thickness is 70 ~ 90nm, refractive index is 1.5 ~ 2.5.Its effect mainly is to increase light absorption, lowers the reflection loss of sunlight at battery surface, and in addition, antireflective coating also has the effect of surface passivation.
The back of the body contact heterojunction solar cell based on N type silicon chip that adopts above technical scheme to make, with conventional crystal silicon production technology and the combination of thin film solar cell production technology, method is simple, industrialization rapidly.Its back of the body contacting structure does not have the grid line covering at the sensitive surface of solar cell in addition, has not only increased the light-receiving area of solar cell, also can simplify the welding sequence appearance requirement in assembly production, saves the production time, reduces the assembly production cost.
Description of drawings
Figure 1 shows that battery structure schematic diagram of the present invention;
Figure 2 shows that the structural representation of backplate in the embodiment of the invention 1;
Figure 3 shows that process flow diagram of the present invention.
Among the figure, 1, the sensitive surface antireflective coating, 2, N+ a-Si amorphous silicon membrane, 3, the intrinsic amorphous silicon film, 4, N type crystalline silicon, 5, the N+ crystal silicon layer, 6, the P-a-Si amorphous silicon membrane, 7, transparent conductive film TCO, 8, back electrode.
Embodiment:
Below in conjunction with accompanying drawing and example technical scheme of the present invention is described, but the present invention is not limited thereto.
Embodiment 1
N type crystalline silicon 4 is selected the n type single crystal silicon sheet for use, adopts the semiconductor cleaning to 4 surperficial prerinse of N type crystalline silicon and surperficial texture.Used N type crystalline silicon 4 thickness are at 200um, resistivity is 0.5 ~ 3 Ω .cm, remove the silicon dioxide layer on N type crystalline silicon 4 surfaces with 1 ~ 5% hydrofluoric acid, in concentration less than 3% NaOH and IPA(isopropyl alcohol) mixed liquor in about 80 ℃ preparation Pyramid mattes.Increase increases the PN junction area to the absorption of sunlight, improves short circuit current.With sour cleaning N type crystalline silicon 4 is afterwards cleaned up-dries again.N type crystalline silicon 4 after the making herbs into wool is put into diffusion furnace (POCl
3) about 850 ℃, carry out heavily phosphorous diffusion of single face, form one deck N+ crystal silicon layer 5 at N type crystalline silicon 4 lower surfaces, behind plasma etching, dephosphorization silex glass (PSG) dries after the washed with de-ionized water;
With plasma enhanced chemical vapor deposition (PECVD) technology, the upper and lower surface of crystal silicon deposits one deck intrinsic amorphous silicon film 3 respectively after 250 ℃ of diffusions, and the about 5nm of thickness has passivation; At the upper surface deposition high concentration N+ of crystal silicon a-Si amorphous silicon membrane 2, thickness is 5 ~ 10nm; At back of the body surface deposition one deck P-a-Si amorphous silicon thin layer 6, thickness is 5 ~ 10nm; Under 400 ℃, at silicon chip front surface grown silicon nitride sensitive surface antireflective coating 1, thickness is 85nm with PECVD, and refractive index is 2.05; Its effect reduces the reflection loss of battery surface, and the solar cell light reflection loss behind the plated film can reduce in 4%; Simultaneously battery is carried out surface passivation effectively and body passivation, reduce the complex centre, improve minority carrier life time, increase photoelectric current.Corrosivity slurry on the silicon chip back up erodes the P-a-Si amorphous silicon thin layer 6 and the intrinsic amorphous silicon film 3 of printing zone, exposes N+ crystal silicon layer 5 surfaces, and the HIT structure of corrosion area is not saved.After using the deionized water ultrasonic cleaning clean at last, oven dry.Deposit the electrically conducting transparent layer film TCO 7 that a layer thickness is 30 ~ 100nm by magnetron sputtering technique in silicon chip back.Again with laser with p type island region territory and N type Region Segmentation.The silk screen printing electrocondution slurry is made back electrode 8 through low-temperature sintering respectively in the N type zone on back of the body surface and p type island region territory.Shown in the cell backside accompanying drawing 2.The electrode printing material that adopts on the N type zone is the silver slurry; The electrode printing material that adopts on the p type island region territory is silver slurry, silver-colored aluminium paste, or similar conventional rear surface of solar cell silver aluminium paste structure is a kind of.
The electrical property output parameter based on the back of the body contact heterojunction solar cell of n type single crystal silicon sheet of the implementation case preparation: under the canonical measure condition: measure temperature 25
oC, light intensity 1000W/m
2, AM1.5 spectrum test, short-circuit current density 42mA/cm
2Open circuit voltage 683mV, fill factor, curve factor 79.5%; Photoelectric conversion efficiency 21.6%.
Claims (8)
1. back of the body contact heterojunction solar cell based on N type silicon chip, be divided into N type zone and p type island region territory from back side feature, it is characterized in that: N type zone comprises from top to bottom sensitive surface antireflective coating, N+ a-Si N+ amorphous silicon membrane, i-a-Si intrinsic amorphous silicon film, N-C-Si N type crystalline silicon, N+ c-Si N+ crystal silicon layer, transparent conductive film TCO and the back electrode of lamination combination successively, forms N+ a-si/ i-a-si/N-c-si/N+c-si heterojunction structure; The p type island region territory comprises from top to bottom sensitive surface antireflective coating, N+ a-Si N+ amorphous silicon membrane, i-a-Si intrinsic amorphous silicon film, N-C-Si N type crystalline silicon, N+ c-Si N+ crystal silicon layer, i-a-Si intrinsic amorphous silicon film, P-a-Si amorphous silicon membrane, transparent conductive film TCO and the back electrode of lamination combination successively, forms N+ a-si/ i-a-si/N-c-si/N+c-si/i-a-si/P-a-si heterojunction structure.
2. the back of the body contact heterojunction solar cell based on N type silicon chip according to claim 1, it is characterized in that: described sensitive surface antireflective coating is SiO
2, Si
3N
4, Ta
2O
5Or TiO
2, antireflective coating thickness is 70 ~ 90nm, refractive index is 1.5 ~ 2.5.
3. the back of the body contact heterojunction solar cell based on N type silicon chip according to claim 1 is characterized in that: adopt chemical vapor deposition method to make the intrinsic amorphous silicon film on N type crystalline silicon and below the N+ crystal silicon layer in p type island region territory, thickness is 1 ~ 50nm.
4. the back of the body contact heterojunction solar cell based on N type silicon chip according to claim 1 is characterized in that: described N type crystalline silicon is monocrystalline silicon, solar level or levels of metal polysilicon, banded silicon, and its thickness is 120 ~ 220um, and doping content is 1 * 10
15～5 * 10
17/ cm
3
5. the back of the body contact heterojunction solar cell based on N type silicon chip according to claim 1 is characterized in that: the N of described N type crystalline silicon lower floor
+Type crystal silicon layer, its thickness are 0.1 ~ 0.5um, and dense phosphorus doping density is 1 * 10
18～5 * 10
20/ cm
3
6. the back of the body contact heterojunction solar cell based on N type silicon chip according to claim 1 is characterized in that: in the p type island region territory, adopt chemical vapor deposition method to deposit one deck P-a-Si amorphous silicon membrane below the intrinsic amorphous silicon film, thickness is 1 ~ 50nm.
7. the back of the body contact heterojunction solar cell based on N type silicon chip according to claim 1, it is characterized in that: transparent conductive film TCO is an oxidic transparent electric conducting material system, is In
2O
3, SnO
2, ZnO, In
2O
3: Sn (ITO), In
2O
3: Mo (IMO), SnO
2: Sb (ATO), SnO
2: F (FTO), ZnO:Al (ZnO), ZnOSnO
2, ZnOIn
2O
3, CdSb
2O
6, MgIn
2O
4, In
4Sn
3O
12, Zn
2In
2O
5, CdIn
2O
4, Cd
2SnO
4, Zn
2SnO
4, GaInO
3In a kind of, its thickness is 50nm ~ 900nm.
8. the back of the body contact heterojunction solar cell based on N type silicon chip according to claim 1 is characterized in that: described back electrode is Al, Ag, Au, Ni, Cu/Ni, Al/Ni or Ti/Pd/Ag electrode, and its thickness is 50nm ~ 600um.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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