CN110047949A - Heterojunction back contact solar cell and preparation method thereof - Google Patents
Heterojunction back contact solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN110047949A CN110047949A CN201910269913.6A CN201910269913A CN110047949A CN 110047949 A CN110047949 A CN 110047949A CN 201910269913 A CN201910269913 A CN 201910269913A CN 110047949 A CN110047949 A CN 110047949A
- Authority
- CN
- China
- Prior art keywords
- layer
- type
- amorphous silicon
- solar cell
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 41
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000002955 isolation Methods 0.000 claims abstract description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 20
- 239000011159 matrix material Substances 0.000 claims description 17
- 238000009792 diffusion process Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 12
- 230000000873 masking effect Effects 0.000 claims description 12
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000006117 anti-reflective coating Substances 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 229910017435 S2 In Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 238000002161 passivation Methods 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 abstract description 2
- 238000005215 recombination Methods 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 abstract 3
- 238000005516 engineering process Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Sustainable Energy (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention aims to disclose a heterojunction back contact solar cell and a preparation method thereof, wherein the heterojunction back contact solar cell comprises an N-type monocrystalline silicon substrate, a front surface P + doping layer and an antireflection layer are sequentially arranged on the front surface of the N-type monocrystalline silicon substrate, an intrinsic amorphous silicon layer is arranged on the back surface of the N-type monocrystalline silicon substrate, an N-type amorphous silicon doping layer and a P-type amorphous silicon doping layer are respectively arranged on the back surface of the intrinsic amorphous silicon layer, an insulating isolation layer is arranged between the N-type amorphous silicon doping layer and the P-type amorphous silicon doping layer, the N-type amorphous silicon doping layer is connected with a negative electrode through a TCO layer, and the P-type amorphous silicon doping layer is connected with a positive electrode through a TC; compared with the prior art, the process difficulty is reduced, and the passivation effect equivalent to that of amorphous silicon is achieved; the surface recombination of current carriers is reduced, the size proportion of an emitter on the back surface of the battery and a back surface field is changed, and the problem of large series resistance of minority carriers and majority carriers in the transmission process is avoided.
Description
Technical field
The present invention relates to a kind of solar battery and preparation method thereof, in particular to a kind of hetero-junctions back contact solar electricity
Pond and preparation method thereof.
Background technique
As fossil energy is petered out, environmental protection consciousness grows to even greater heights, people recognize development renewable energy further
The importance in source.Solar energy is a kind of clean reproducible energy, inexhaustible.Solar energy is developed and utilized,
Small pollution of the environment can provide sufficient energy for the mankind, also will not influence the ecological balance of nature, new relative to other
The energy such as wind energy, geothermal energy and tide energy etc., solar energy is high with availability, resource distribution is extensive and safe and reliable etc. all
More advantages become most promising one of the energy.
Heteroj unction technologies in conjunction with back contacts technology, are both had HIT battery and opened by N-type hetero-junctions back contact solar cell
The high advantage of road voltage, while the advantage big but also with IBC battery short circuit electric current.And effectively due to the use of n type single crystal silicon piece
It reduces that few son is compound and metal impurity con, avoids photo attenuation effect, further improve the photovoltaic performance of battery.
There are two types of the technical solutions of existing hetero-junctions back contact solar cell: one is use N+ in battery front surface
Crystalline silicon forms front-surface field and is passivated (FSF) structure, and another kind is to form front-surface field using N+ amorphous silicon and intrinsic amorphous silicon
It is passivated (FSF) structure, the back side is passivated using intrinsic amorphous silicon, and P-type non-crystalline silicon and N-type amorphous silicon are respectively as emitter
With back surface field (BSF).
In existing hetero-junctions back contact solar cell, due to being all using front-surface field passivating structure (FSF), this makes
Battery back surface field width proportion is smaller, cause the more sons generated above emitter to be transferred to the string during the area BSF
Join resistance to increase, affects the promotion of battery conversion efficiency to a certain extent.
Meanwhile the structure of existing hetero-junctions back contact solar cell be mostly battery front side and the back side be all made of it is intrinsic
Amorphous silicon is passivated, but in actual industrialization process, and the doped amorphous silicon and intrinsic amorphous silicon layer of front surface will cause one
Fixed optical absorption loss, and the manufacturing process difficulty of battery is increased.
It is accordingly required in particular to a kind of hetero-junctions back contact solar cell and preparation method thereof, to solve above-mentioned existing deposit
The problem of.
Summary of the invention
The purpose of the present invention is to provide a kind of hetero-junctions back contact solar cells and preparation method thereof, for existing skill
The deficiency of art reduces the surface recombination of carrier, changes simultaneously the dimension scale of cell backside emitter and back surface field, avoids
Few sub and more son series resistance larger problem in transmission process.
Technical problem solved by the invention can be realized using following technical scheme:
In a first aspect, the present invention provides a kind of hetero-junctions back contact solar cell, which is characterized in that it includes N-type list
Crystal silicon matrix sets gradually front surface P+ doped layer and antireflection layer in the front of the n type single crystal silicon matrix, in the N-type
Intrinsic amorphous silicon layer is arranged in the back side of single crystal silicon substrate, is respectively arranged with N-type amorphous silicon at the back side of the intrinsic amorphous silicon layer
Doped layer and P-type non-crystalline silicon doped layer are provided with absolutely between the N-type amorphous silicon doped layer and the P-type non-crystalline silicon doped layer
Edge separation layer, the N-type amorphous silicon doped layer are connected with negative electrode by tco layer, and the P-type non-crystalline silicon doped layer passes through TCO
Layer is connected with positive electrode.
In one embodiment of the invention, the front surface P+ doped layer with a thickness of 0.1-0.5 μm.
In one embodiment of the invention, the antireflection layer with a thickness of 60-80nm, refractive index 1.8-2.5.
In one embodiment of the invention, the intrinsic amorphous silicon layer with a thickness of 1-5nm.
In one embodiment of the invention, the doping concentration of the N-type amorphous silicon doped layer is 1 × 1020cm-3-1×
1021cm-3, with a thickness of 20-100nm, width is 300-600 μm.
In one embodiment of the invention, the doping concentration of the P-type non-crystalline silicon doped layer is 1 × 1020cm-3-1×
1021cm-3, with a thickness of 20-100nm, width is 700-1000 μm.
In one embodiment of the invention, the dielectric isolation layer with a thickness of 20-100nm, width is 10-100 μm.
Second aspect, the present invention provide a kind of preparation method of hetero-junctions back contact solar cell, which is characterized in that it
Include the following steps:
S1, it selects n type single crystal silicon piece as matrix, and carries out surface wool manufacturing processing；
S2, boron diffusion is carried out to n type single crystal silicon front side of matrix using low-voltage high-temperature diffusion furnace；
S3, it anneals at a temperature of 700-1000 DEG C, while thermally grown generation layer of silicon dioxide layer；
S4, using PECVD device in n type single crystal silicon piece front deposited silicon nitride antireflective coating；
S5, using LPCVD equipment in n type single crystal silicon piece backside deposition intrinsic amorphous silicon layer；
S6, transmitting is formed in n type single crystal silicon piece backside deposition P-type non-crystalline silicon layer using LPCVD equipment using masking process
Pole；
S7, use PECVD device in n type single crystal silicon piece backside deposition dielectric isolation layer using masking process；
S8, back table is formed in n type single crystal silicon piece backside deposition N-type non-crystalline silicon layer using LPCVD equipment using masking process
Face；
S9, masking process is used to deposit electrically conducting transparent oxygen using CVD or PVD method on p-type emitter and N-type back surface field
Compound film TCO forms conductive layer；
S10, silk-screen printing silver paste and aluminium paste are carried out to n type single crystal silicon piece on transparent conductive oxide film, is formed just
Electrode and negative electrode.
In one embodiment of the invention, the n type single crystal silicon matrix with a thickness of 140-180 μm, resistivity 1-
10Ω/□。
In one embodiment of the invention, in step s 2, diffusion temperature is 800-1100 DEG C, diffusion time 10-
50 minutes, the square resistance of front surface P+ doped layer was 100-160 Ω/ after diffusion, and junction depth is 0.1-0.5 μm.
Hetero-junctions back contact solar cell of the invention and preparation method thereof, compared with prior art, using SiO2/
SiNx passivating structure and front surface floating junction (FFE) handle battery surface, reduce technology difficulty, reached with it is non-
The comparable passivation effect of crystal silicon；By forming floating junction using P+ crystalline silicon in battery front surface, the surface for reducing carrier is multiple
It closes, changes the dimension scale of cell backside emitter and back surface field, dimension scale shared by back surface field is close to 50%, keeps away
Few sub and more son larger problems of series resistance in transmission process are exempted from, have achieved the object of the present invention.
The features of the present invention sees the detailed description of the drawings of the present case and following preferable embodiment and obtains clearly
Solution.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of hetero-junctions back contact solar cell of the invention；
Fig. 2 is the schematic diagram of hetero-junctions back contact solar cell preparation method of the invention.
Specific embodiment
In order to be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention, tie below
Conjunction is specifically illustrating, and the present invention is further explained.
Embodiment
As shown in Figure 1, hetero-junctions back contact solar cell of the invention, it includes n type single crystal silicon matrix 1, in N-type list
The front of crystal silicon matrix 1 sets gradually front surface P+ doped layer 2 and antireflection layer 3, is arranged at the back side of n type single crystal silicon matrix 1
Intrinsic amorphous silicon layer 4 is respectively arranged with N-type amorphous silicon doped layer 5 and P-type non-crystalline silicon doping at the back side of intrinsic amorphous silicon layer 4
Layer 6, is provided with dielectric isolation layer 7, N-type amorphous silicon doped layer 5 between N-type amorphous silicon doped layer 5 and P-type non-crystalline silicon doped layer 6
It is connected with negative electrode 9 by tco layer 8, P-type non-crystalline silicon doped layer 6 is connected with positive electrode 10 by tco layer 8.
In the present embodiment, front surface P+ doped layer 2 with a thickness of 0.1-0.5 μm.
In the present embodiment, antireflection layer 3 with a thickness of 60-80nm, refractive index 1.8-2.5.
In the present embodiment, intrinsic amorphous silicon layer 4 with a thickness of 1-5nm.
In the present embodiment, the doping concentration of N-type amorphous silicon doped layer 5 is 1 × 1020cm-3-1×1021cm-3, with a thickness of
20-100nm, width are 300-600 μm；The doping concentration of P-type non-crystalline silicon doped layer 6 is 1 × 1020cm-3-1×1021cm-3, thick
Degree is 20-100nm, and width is 700-1000 μm.
In the present embodiment, dielectric isolation layer 7 with a thickness of 20-100nm, width is 10-100 μm.
As shown in Fig. 2, the preparation method of hetero-junctions back contact solar cell of the invention, it includes the following steps:
S1, select n type single crystal silicon piece as matrix, and carry out surface wool manufacturing processing, n type single crystal silicon matrix with a thickness of
140-180 μm, resistivity is 1-10 Ω/；
S2, boron diffusion, diffusion temperature 800-1100 are carried out to n type single crystal silicon front side of matrix using low-voltage high-temperature diffusion furnace
DEG C, diffusion time is 10-50 minutes, and the square resistance of front surface P+ doped layer is 100-160 Ω/ after diffusion, and junction depth is
0.1-0.5μm；
S3, it anneals at a temperature of 700-1000 DEG C, while thermally grown generation layer of silicon dioxide layer；
S4, using PECVD device in n type single crystal silicon piece front deposited silicon nitride antireflective coating；
S5, using LPCVD equipment in n type single crystal silicon piece backside deposition intrinsic amorphous silicon layer；
S6, transmitting is formed in n type single crystal silicon piece backside deposition P-type non-crystalline silicon layer using LPCVD equipment using masking process
Pole；
S7, use PECVD device in n type single crystal silicon piece backside deposition dielectric isolation layer using masking process；
S8, back table is formed in n type single crystal silicon piece backside deposition N-type non-crystalline silicon layer using LPCVD equipment using masking process
Face；
S9, masking process is used to deposit electrically conducting transparent oxygen using CVD or PVD method on p-type emitter and N-type back surface field
Compound film TCO forms conductive layer；
S10, silk-screen printing silver paste and aluminium paste are carried out to n type single crystal silicon piece on transparent conductive oxide film, is formed just
Electrode and negative electrode.
The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these changes
Change and improvement all fall within the protetion scope of the claimed invention, the claimed scope of the invention by appended claims and its
Equivalent thereof.
Claims (10)
1. a kind of hetero-junctions back contact solar cell and preparation method thereof, which is characterized in that it includes n type single crystal silicon matrix,
Front surface P+ doped layer and antireflection layer are set gradually in the front of the n type single crystal silicon matrix, in the n type single crystal silicon matrix
The back side be arranged intrinsic amorphous silicon layer, be respectively arranged with N-type amorphous silicon doped layer and p-type at the back side of the intrinsic amorphous silicon layer
Amorphous silicon doped layer is provided with dielectric isolation layer between the N-type amorphous silicon doped layer and the P-type non-crystalline silicon doped layer, institute
It states N-type amorphous silicon doped layer and negative electrode is connected with by tco layer, the P-type non-crystalline silicon doped layer is connected with positive electricity by tco layer
Pole.
2. hetero-junctions back contact solar cell as described in claim 1, which is characterized in that the front surface P+ doped layer
With a thickness of 0.1-0.5 μm.
3. hetero-junctions back contact solar cell as described in claim 1, which is characterized in that the antireflection layer with a thickness of
60-80nm, refractive index 1.8-2.5.
4. hetero-junctions back contact solar cell as described in claim 1, which is characterized in that the thickness of the intrinsic amorphous silicon layer
Degree is 1-5nm.
5. hetero-junctions back contact solar cell as described in claim 1, which is characterized in that the N-type amorphous silicon doped layer
Doping concentration be 1 × 1020cm-3-1×1021cm-3, with a thickness of 20-100nm, width is 300-600 μm.
6. hetero-junctions back contact solar cell as described in claim 1, which is characterized in that the P-type non-crystalline silicon doped layer
Doping concentration be 1 × 1020cm-3-1×1021cm-3, with a thickness of 20-100nm, width is 700-1000 μm.
7. hetero-junctions back contact solar cell as described in claim 1, which is characterized in that the thickness of the dielectric isolation layer
For 20-100nm, width is 10-100 μm.
8. a kind of preparation method of hetero-junctions back contact solar cell, which is characterized in that it includes the following steps:
S1, it selects n type single crystal silicon piece as matrix, and carries out surface wool manufacturing processing；
S2, boron diffusion is carried out to n type single crystal silicon front side of matrix using low-voltage high-temperature diffusion furnace；
S3, it anneals at a temperature of 700-1000 DEG C, while thermally grown generation layer of silicon dioxide layer；
S4, using PECVD device in n type single crystal silicon piece front deposited silicon nitride antireflective coating；
S5, using LPCVD equipment in n type single crystal silicon piece backside deposition intrinsic amorphous silicon layer；
S6, emitter is formed in n type single crystal silicon piece backside deposition P-type non-crystalline silicon layer using LPCVD equipment using masking process；
S7, use PECVD device in n type single crystal silicon piece backside deposition dielectric isolation layer using masking process；
S8, back surface field is formed in n type single crystal silicon piece backside deposition N-type non-crystalline silicon layer using LPCVD equipment using masking process；
S9, masking process is used to deposit transparent conductive oxide using CVD or PVD method on p-type emitter and N-type back surface field
Film TCO forms conductive layer；
S10, silk-screen printing silver paste and aluminium paste are carried out to n type single crystal silicon piece on transparent conductive oxide film, forms positive electrode
And negative electrode.
9. the preparation method of hetero-junctions back contact solar cell as claimed in claim 8, which is characterized in that the N-type list
Crystal silicon matrix with a thickness of 140-180 μm, resistivity is 1-10 Ω/.
10. the preparation method of hetero-junctions back contact solar cell as claimed in claim 8, which is characterized in that in step S2
In, diffusion temperature is 800-1100 DEG C, and diffusion time is 10-50 minutes, and the square resistance of front surface P+ doped layer is after diffusion
100-160 Ω/, junction depth are 0.1-0.5 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910269913.6A CN110047949A (en) | 2019-04-04 | 2019-04-04 | Heterojunction back contact solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910269913.6A CN110047949A (en) | 2019-04-04 | 2019-04-04 | Heterojunction back contact solar cell and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110047949A true CN110047949A (en) | 2019-07-23 |
Family
ID=67276175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910269913.6A Pending CN110047949A (en) | 2019-04-04 | 2019-04-04 | Heterojunction back contact solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110047949A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111816727A (en) * | 2020-07-14 | 2020-10-23 | 普乐新能源科技(徐州)有限公司 | Interdigital back contact heterojunction solar cell based on LPCVD (low pressure chemical vapor deposition) high-efficiency amorphous silicon doping technology |
| WO2022007532A1 (en) * | 2020-07-10 | 2022-01-13 | 普乐新能源科技(徐州)有限公司 | Method for making doped amorphous silicon on back side of hbc cell |
| CN115588698A (en) * | 2022-11-07 | 2023-01-10 | 隆基绿能科技股份有限公司 | Back contact solar cell, preparation method thereof and photovoltaic module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102214719A (en) * | 2011-06-10 | 2011-10-12 | 山东力诺太阳能电力股份有限公司 | Back contact heterojunction solar battery based on N-type silicon slice |
| US20140224306A1 (en) * | 2013-02-08 | 2014-08-14 | International Business Machines Corporation | Interdigitated back contact heterojunction photovoltaic device with a floating junction front surface field |
| CN105118870A (en) * | 2015-08-31 | 2015-12-02 | 深圳市科纳能薄膜科技有限公司 | Method of manufacturing back contact heterojunction single crystalline silicon solar cell |
| CN107946410A (en) * | 2017-12-18 | 2018-04-20 | 阳光中科（福建）能源股份有限公司 | A kind of production method of N-type IBC solar cells |
-
2019
- 2019-04-04 CN CN201910269913.6A patent/CN110047949A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102214719A (en) * | 2011-06-10 | 2011-10-12 | 山东力诺太阳能电力股份有限公司 | Back contact heterojunction solar battery based on N-type silicon slice |
| US20140224306A1 (en) * | 2013-02-08 | 2014-08-14 | International Business Machines Corporation | Interdigitated back contact heterojunction photovoltaic device with a floating junction front surface field |
| CN105118870A (en) * | 2015-08-31 | 2015-12-02 | 深圳市科纳能薄膜科技有限公司 | Method of manufacturing back contact heterojunction single crystalline silicon solar cell |
| CN107946410A (en) * | 2017-12-18 | 2018-04-20 | 阳光中科（福建）能源股份有限公司 | A kind of production method of N-type IBC solar cells |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022007532A1 (en) * | 2020-07-10 | 2022-01-13 | 普乐新能源科技(徐州)有限公司 | Method for making doped amorphous silicon on back side of hbc cell |
| CN111816727A (en) * | 2020-07-14 | 2020-10-23 | 普乐新能源科技(徐州)有限公司 | Interdigital back contact heterojunction solar cell based on LPCVD (low pressure chemical vapor deposition) high-efficiency amorphous silicon doping technology |
| WO2022012180A1 (en) * | 2020-07-14 | 2022-01-20 | 普乐新能源科技(徐州)有限公司 | Interdigitated back contact heterojunction solar cell based on lpcvd efficient amorphous silicon doping technology |
| CN115588698A (en) * | 2022-11-07 | 2023-01-10 | 隆基绿能科技股份有限公司 | Back contact solar cell, preparation method thereof and photovoltaic module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU2015101917A4 (en) | High-efficiency N-type bifacial solar cell | |
| KR101000064B1 (en) | Hetero-junction silicon solar cell and fabrication method thereof | |
| CN109509807B (en) | Emitter structure of crystalline silicon heterojunction solar cell and preparation method thereof | |
| CN210926046U (en) | Solar cell | |
| CN110034193A (en) | Multi-fine-grid IBC battery with Topcon passivation structure and preparation method thereof | |
| CN110459638A (en) | Topcon passivated IBC battery and preparation method thereof | |
| CN102403369A (en) | Passivation dielectric film for solar cell | |
| CN109473492A (en) | It is suitble to the MWT hetero-junction silicon solar cell and preparation method thereof of scale volume production | |
| CN110047949A (en) | Heterojunction back contact solar cell and preparation method thereof | |
| CN206148449U (en) | N type PERT bifacial cell structure of suitable thin sliceization | |
| CN104332522B (en) | Graphene double-junction solar battery and preparation method thereof | |
| CN111613688A (en) | Interdigital back contact solar cell structure and manufacturing method thereof | |
| KR101612133B1 (en) | Metal Wrap Through type solar cell and method for fabricating the same | |
| CN108461554A (en) | Full back-contact heterojunction solar battery and preparation method thereof | |
| CN111640826A (en) | Preparation method of battery conducting by utilizing selective contact | |
| US20230361227A1 (en) | Laminated passivation structure of solar cell and preparation method thereof | |
| CN207967020U (en) | N-type heterojunction double-sided solar cell structure | |
| CN106653923B (en) | A kind of N-type PERT double-side cell structures of suitable sheet and preparation method thereof | |
| CN209056506U (en) | It is suitble to the MWT hetero-junction silicon solar cell of scale volume production | |
| CN208507687U (en) | Interdigital back contact heterojunction monocrystalline silicon battery | |
| CN111490105A (en) | Preparation method of N-type interdigital back contact solar cell | |
| Zanesco et al. | Development and comparison of small and large area boron doped solar cells in n-type and p-type Cz-Si | |
| Pengcheng et al. | Characteristics and development of interdigital back contact solar cells | |
| CN210403753U (en) | Interdigital back contact solar cell structure | |
| Romijn et al. | Industrial n-type solar cells: Towards 20% efficiency |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190723 |