CN109509807B - Emitter structure of crystalline silicon heterojunction solar cell and preparation method thereof - Google Patents
Emitter structure of crystalline silicon heterojunction solar cell and preparation method thereof Download PDFInfo
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title claims description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 89
- 238000000151 deposition Methods 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 238000012360 testing method Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 230000007547 defect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The emitter structure of the crystalline silicon heterojunction solar cell comprises an N-type crystalline silicon wafer, wherein amorphous silicon intrinsic layers are arranged on the front surface and the back surface of the N-type crystalline silicon wafer, TCO conductive films are arranged on the outer sides of the amorphous silicon intrinsic layers, a plurality of Ag electrodes are arranged on the outer sides of the TCO conductive films, an amorphous silicon doped layer N layer is arranged between the amorphous silicon intrinsic layer and the TCO conductive film on one surface of the N-type crystalline silicon wafer, and a TMB doped layer and a B2H6 doped layer are arranged between the amorphous silicon intrinsic layer and the TCO conductive film on the other surface of the N-type crystalline silicon wafer. The invention adopts TMB gas for doping, prevents doping atoms B from diffusing to the amorphous silicon intrinsic layer, and improves open-circuit voltage; the gap width of the TMB gas is large, light can more effectively pass through the doping layer, and short-circuit current is increased; B2H6 gas is adopted to dope the side close to the TCO, so that the conductivity of the doped layer is better; the photoelectric conversion efficiency of the HJT solar cell is improved.
Description
Technical Field
The invention relates to the technical field of photovoltaic high-efficiency batteries, in particular to an emitter structure of a crystalline silicon heterojunction solar battery and a preparation method thereof.
Background
With the rapid development of photovoltaic technology, the conversion efficiency of crystalline silicon solar cells is improved year by year. In the current photovoltaic industry, the conversion efficiency of monocrystalline silicon solar cells has reached more than 20%, and the conversion efficiency of polycrystalline silicon solar cells has reached more than 18.5%. However, the silicon-based solar cells produced in large scale and having a conversion efficiency of 22.5% or more are only the Back Contact (IBC) of SunPower corporation in usa and the amorphous silicon/crystalline silicon Heterojunction (HJT) with Intrinsic Thin layer of panasonic corporation in japan. Compared with the IBC solar cell, the HJT cell has the advantages of less energy consumption, simple process flow, small temperature coefficient and the like, and the advantages are also the reasons that the HJT solar cell can be distinguished from a plurality of high-efficiency silicon-based solar cell schemes.
At present, China is popularizing distributed solar photovoltaic power generation, and due to the fact that roof resources are limited, and the distributed photovoltaic power generation requires a solar cell module with high conversion efficiency, the HJT solar cell has the advantages of high efficiency and double-sided power generation, and the distributed solar cell module shows wide application prospects in distributed photovoltaic power stations.
The structure of the existing HJT battery is that a layer of amorphous silicon intrinsic layer and a doped layer are made on both sides of N-type monocrystalline silicon. The amorphous silicon intrinsic layer is mainly used for passivating the surface defects of the crystalline silicon and reducing the surface defect state, so that the carrier recombination is reduced; the amorphous silicon doped layer mainly forms a PN junction and a field effect passivation layer with crystalline silicon.
Referring to fig. 1, in the prior art, the P layer of the amorphous silicon doping layer is completed only by doping B2H6 gas, the P layer of the amorphous silicon doping layer formed by doping B2H6 gas has poor thermal stability, B atoms are easy to diffuse into the intrinsic layer of amorphous silicon, the passivation effect of the intrinsic layer is affected, the open-circuit voltage of the solar cell is low, and the conversion efficiency of the solar cell is low; the P layer of the amorphous silicon doped layer formed by B2H6 gas doping has a low forbidden bandwidth, and absorbs more sunlight, increasing optical loss, resulting in a low short-circuit current of the solar cell and a low conversion efficiency of the solar cell.
Disclosure of Invention
The invention aims to overcome the defects and provide an emitter structure of a crystalline silicon heterojunction solar cell and a preparation method thereof, which can prevent the reduction of forbidden bandwidth caused by the diffusion of B atoms to an amorphous silicon intrinsic layer when B2H6 is doped and can meet the high conductivity of an amorphous silicon doped layer P layer.
The purpose of the invention is realized as follows:
an emitting electrode structure of a crystalline silicon heterojunction solar cell comprises an N-type crystalline silicon wafer, wherein amorphous silicon intrinsic layers are arranged on the front surface and the back surface of the N-type crystalline silicon wafer, TCO conductive films are arranged on the outer sides of the amorphous silicon intrinsic layers, a plurality of Ag electrodes are arranged on the outer sides of the TCO conductive films, an amorphous silicon doping layer N layer is arranged between the amorphous silicon intrinsic layer and the TCO conductive film on one surface of the N-type crystalline silicon wafer, a TMB doping layer and a B2H6 doping layer are arranged between the amorphous silicon intrinsic layer and the TCO conductive film on the other surface of the N-type crystalline silicon wafer, the TMB doping layer is arranged on one side close to the amorphous silicon intrinsic layer, and the B2H6 doping layer.
An emitter structure of a crystalline silicon heterojunction solar cell is characterized in that the thickness of a TMB doped layer is 1-20 nm, and the forbidden bandwidth is 1.6-1.9 eV.
An emitter structure of a crystalline silicon heterojunction solar cell is characterized in that the thickness of a B2H6 doped layer is 1-20 nm, and the forbidden bandwidth is 1.4-1.6 eV.
A preparation method of an emitter structure of a crystalline silicon heterojunction solar cell comprises the following steps:
firstly, selecting a substrate N-type monocrystalline silicon wafer to perform texturing and cleaning treatment;
secondly, preparing the double intrinsic amorphous silicon layers on the front side and the back side by PECVD;
selecting an N-type amorphous silicon film as a light receiving surface doping layer;
fourthly, preparing an N-type amorphous silicon layer, namely an amorphous silicon doping layer N layer, by using plasma enhanced chemical vapor deposition;
fifthly, preparing a P-type amorphous silicon layer by using plasma chemical vapor deposition, wherein the first layer is doped with TMB to form a TMB doped layer, and the second layer is doped with B2H6 to form a B2H6 doped layer;
sixthly, depositing a TCO conductive film by using a reactive ion deposition method;
seventhly, forming front and back Ag electrodes through screen printing;
eighthly, solidifying to form good ohmic contact between the silver grid line and the TCO conductive film;
and ninthly, testing the electrical property of the battery.
The preparation method of the emitter structure of the crystalline silicon heterojunction solar cell comprises the steps that the thickness of a TMB doping layer is 1-20 nm, and the forbidden bandwidth is 1.6-1.9 eV; the thickness of the B2H6 doped layer is 1-20 nm, the forbidden bandwidth is 1.4-1.6 eV, and the total thickness of the P-type amorphous silicon layer is 7-15 nm.
A preparation method of an emitter structure of a crystalline silicon heterojunction solar cell is provided, wherein the thickness of an amorphous silicon intrinsic layer on the front surface and the back surface is 5-10 nm.
A preparation method of an emitter structure of a crystalline silicon heterojunction solar cell is provided, wherein the thickness of an N layer of an amorphous silicon doping layer is 4-8 nm.
The preparation method of the emitter structure of the crystalline silicon heterojunction solar cell is characterized in that the thickness of the TCO conductive film is 70-110 nm.
Compared with the prior art, the invention has the beneficial effects that:
for the HJT heterojunction solar cell structure, the P layer of the amorphous silicon doping layer on the back light surface adopts a double-layer laminated structure, TMB gas is adopted to dope the P layer close to the intrinsic amorphous silicon layer, and doping atoms B (boron) are prevented from diffusing to the intrinsic layer of the amorphous silicon, so that the passivation effect of the intrinsic amorphous silicon is ensured, and the open-circuit voltage Voc is improved; TMB gas is adopted to dope the near intrinsic amorphous silicon layer, the forbidden band width is large, and light can more effectively pass through the doping layer, so that the absorption of crystalline silicon to the light is increased, and the short-circuit current Isc is improved; B2H6 gas is adopted to dope one side close to the TCO, the conductivity of the doped layer is better, the series resistance Rs of the solar cell is lower, and therefore the filling factor FF is higher; and finally, the photoelectric conversion efficiency of the HJT solar cell is improved.
Drawings
Fig. 1 is a schematic structural diagram of a conventional HJT heterojunction solar cell.
Fig. 2 is a schematic structural view of the HJT heterojunction solar cell of the present invention.
Wherein:
the solar cell comprises an N-type crystal silicon wafer 1, an amorphous silicon intrinsic layer 2, an amorphous silicon doped layer N layer 3, an amorphous silicon doped layer P layer 4, a TMB doped layer 5, a B2H6 doped layer 6, a TCO conductive film 7 and an Ag electrode 8.
Detailed Description
Example 1:
referring to fig. 2, the emitter structure of the crystalline silicon heterojunction solar cell according to the invention comprises an N-type crystalline silicon wafer 1, wherein amorphous silicon intrinsic layers 2 are respectively arranged on the front surface and the back surface of the N-type crystalline silicon wafer 1;
an amorphous silicon doped layer N layer 3 is arranged on the outer side of the amorphous silicon intrinsic layer 2 on the front surface, a TCO conductive film 7 is arranged on the outer side of the amorphous silicon doped layer N layer 3 on the front surface, and a plurality of Ag electrodes 8 are arranged on the outer side of the TCO conductive film 7;
the amorphous silicon intrinsic layer 2 on the back side is provided with a TMB doping layer 5 on the outer side, a B2H6 doping layer 6 is arranged on the outer side of the TMB doping layer 5, a TCO conductive film 7 is arranged on the outer side of the B2H6 doping layer 6, and a plurality of Ag electrodes 8 are arranged on the outer side of the TCO conductive film 7.
The thickness of the TMB doping layer 5 is 6nm, and the forbidden bandwidth is 1.75 eV; the thickness of the doped layer 6 of the B2H6 is 4nm, and the forbidden bandwidth is 1.4 eV.
The invention relates to a preparation method of an emitter structure of a crystalline silicon heterojunction solar cell, which comprises the following steps:
(1) carrying out texturing and cleaning treatment on an N-type monocrystalline silicon wafer 1 with the size of 156.75mm and the thickness of 180 um;
(2) preparing the double intrinsic amorphous silicon layers on the front surface and the back surface by PECVD, wherein the thickness of the amorphous silicon intrinsic layer 2 on the front surface and the back surface is 8 nm;
(3) selecting an N-type amorphous silicon film as a light receiving surface doping layer;
(4) preparing an N-type amorphous silicon layer, namely an amorphous silicon doped layer N layer 3, by using plasma enhanced chemical vapor deposition, wherein the thickness of the N-type amorphous silicon layer is 6 nm;
(5) preparing a P-type amorphous silicon layer by using plasma chemical vapor deposition, wherein the total thickness is 10nm, the first layer is doped with TMB to form a TMB doped layer 5, and the second layer is doped with B2H6 to form a B2H6 doped layer 6; the thickness of the TMB doping layer 5 is 6nm, and the forbidden bandwidth is 1.75 eV; the thickness of the B2H6 doped layer 6 is 4nm, and the forbidden bandwidth is 1.4 eV;
(6) depositing the TCO conductive film 7 using a reactive ion deposition (RPD) method to a thickness of 100 nm;
(7) forming front and back Ag electrodes 8 by screen printing;
(8) curing to form good ohmic contact between the silver grid line and the TCO conductive film 7;
(9) a test of the electrical performance of the cells was conducted.
Example 2:
referring to fig. 2, the emitter structure of the crystalline silicon heterojunction solar cell according to the invention comprises an N-type crystalline silicon wafer 1, wherein amorphous silicon intrinsic layers 2 are respectively arranged on the front surface and the back surface of the N-type crystalline silicon wafer 1;
an amorphous silicon doped layer N layer 3 is arranged on the outer side of the amorphous silicon intrinsic layer 2 on the front surface, a TCO conductive film 7 is arranged on the outer side of the amorphous silicon doped layer N layer 3 on the front surface, and a plurality of Ag electrodes 8 are arranged on the outer side of the TCO conductive film 7;
the amorphous silicon intrinsic layer 2 on the back side is provided with a TMB doping layer 5 on the outer side, a B2H6 doping layer 6 is arranged on the outer side of the TMB doping layer 5, a TCO conductive film 7 is arranged on the outer side of the B2H6 doping layer 6, and a plurality of Ag electrodes 8 are arranged on the outer side of the TCO conductive film 7.
The thickness of the TMB doping layer 5 is 5nm, and the forbidden bandwidth is 1.7 eV; the thickness of the doped layer 6 of the B2H6 is 5nm, and the forbidden bandwidth is 1.4 eV.
The invention relates to a preparation method of an emitter structure of a crystalline silicon heterojunction solar cell, which comprises the following steps:
(1) carrying out texturing and cleaning treatment on an N-type monocrystalline silicon wafer 1 with the size of 156.75mm and the thickness of 180 um;
(2) preparing the double intrinsic amorphous silicon layers on the front surface and the back surface by PECVD, wherein the thickness of the amorphous silicon intrinsic layer 2 on the front surface and the back surface is 8 nm;
(3) selecting an N-type amorphous silicon film as a light receiving surface doping layer;
(4) preparing an N-type amorphous silicon layer, namely an amorphous silicon doped layer N layer 3, by using plasma enhanced chemical vapor deposition, wherein the thickness of the N-type amorphous silicon layer is 6 nm;
(5) preparing a P-type amorphous silicon layer by using plasma chemical vapor deposition, wherein the total thickness is 10nm, the first layer is doped with TMB to form a TMB doped layer 5, and the second layer is doped with B2H6 to form a B2H6 doped layer 6; the thickness of the TMB doping layer 5 is 5nm, and the forbidden bandwidth is 1.7 eV; the thickness of the B2H6 doped layer 6 is 5nm, and the forbidden bandwidth is 1.4 eV;
(6) depositing the TCO conductive film 7 using a reactive ion deposition (RPD) method to a thickness of 100 nm;
(7) forming front and back Ag electrodes 8 by screen printing;
(8) curing to form good ohmic contact between the silver grid line and the TCO conductive film 7;
(9) a test of the electrical performance of the cells was conducted.
Example 3:
referring to fig. 2, the emitter structure of the crystalline silicon heterojunction solar cell according to the invention comprises an N-type crystalline silicon wafer 1, wherein amorphous silicon intrinsic layers 2 are respectively arranged on the front surface and the back surface of the N-type crystalline silicon wafer 1;
an amorphous silicon doped layer N layer 3 is arranged on the outer side of the amorphous silicon intrinsic layer 2 on the front surface, a TCO conductive film 7 is arranged on the outer side of the amorphous silicon doped layer N layer 3 on the front surface, and a plurality of Ag electrodes 8 are arranged on the outer side of the TCO conductive film 7;
the amorphous silicon intrinsic layer 2 on the back side is provided with a TMB doping layer 5 on the outer side, a B2H6 doping layer 6 is arranged on the outer side of the TMB doping layer 5, a TCO conductive film 7 is arranged on the outer side of the B2H6 doping layer 6, and a plurality of Ag electrodes 8 are arranged on the outer side of the TCO conductive film 7.
The thickness of the TMB doping layer 5 is 5nm, and the forbidden bandwidth is 1.7 eV; the thickness of the doped layer 6 of the B2H6 is 3nm, and the forbidden bandwidth is 1.4 eV.
The invention relates to a preparation method of an emitter structure of a crystalline silicon heterojunction solar cell, which comprises the following steps:
(1) carrying out texturing and cleaning treatment on an N-type monocrystalline silicon wafer 1 with the size of 156.75mm and the thickness of 180 um;
(2) preparing the double intrinsic amorphous silicon layers on the front surface and the back surface by PECVD, wherein the thickness of the amorphous silicon intrinsic layer 2 on the front surface and the back surface is 8 nm;
(3) selecting an N-type amorphous silicon film as a light receiving surface doping layer;
(4) preparing an N-type amorphous silicon layer, namely an amorphous silicon doped layer N layer 3, by using plasma enhanced chemical vapor deposition, wherein the thickness of the N-type amorphous silicon layer is 6 nm;
(5) preparing a P-type amorphous silicon layer by using plasma chemical vapor deposition, wherein the total thickness is 8nm, the first layer is doped with TMB to form a TMB doped layer 5, and the second layer is doped with B2H6 to form a B2H6 doped layer 6; the thickness of the TMB doping layer 5 is 5nm, and the forbidden bandwidth is 1.7 eV; the thickness of the B2H6 doped layer 6 is 3nm, and the forbidden bandwidth is 1.4 eV;
(6) depositing the TCO conductive film 7 using a reactive ion deposition (RPD) method to a thickness of 100 nm;
(7) forming front and back Ag electrodes 8 by screen printing;
(8) curing to form good ohmic contact between the silver grid line and the TCO conductive film 7;
(9) a test of the electrical performance of the cells was conducted.
TMB doping differs from B2H6 doping as follows: the thermal stability of TMB doping is more stable than that of B2H6 doping; the forbidden band width of TMB doping is wider than that of B2H6 doping; TMB doping is less conductive than B2H6 doping.
Comparing the data of the embodiment of the invention with the prior art with the same parameters except the structure of the P-type amorphous silicon layer, the electrical performance comparison of the invention with the prior art refers to the following table, and the improvement of the electrical performance parameters of the solar cell can be obtained mainly from the open-circuit voltage Voc, the short-circuit current Isc and the fill factor FF, so that the conversion efficiency Eta of the solar cell is improved by 0.15% absolutely.
The above is only a specific application example of the present invention, and the protection scope of the present invention is not limited in any way. All the technical solutions formed by equivalent transformation or equivalent replacement fall within the protection scope of the present invention.
Claims (5)
1. The emitting electrode structure of the crystalline silicon heterojunction solar cell comprises an N-type crystalline silicon wafer (1), wherein amorphous silicon intrinsic layers (2) are arranged on the front side and the back side of the N-type crystalline silicon wafer (1), TCO conductive films (7) are arranged on the outer sides of the amorphous silicon intrinsic layers (2), and a plurality of Ag electrodes (8) are arranged on the outer sides of the TCO conductive films (7), and is characterized in that: an amorphous silicon doped layer N layer (3) is arranged between the amorphous silicon intrinsic layer (2) and the TCO conductive film (7) on one surface of the N-type crystal silicon wafer (1), a TMB doped layer (5) and a B2H6 doped layer (6) are arranged between the amorphous silicon intrinsic layer (2) and the TCO conductive film (7) on the other surface of the N-type crystal silicon wafer, the TMB doped layer (5) is arranged on one side close to the amorphous silicon intrinsic layer (2), and the B2H6 doped layer (6) is arranged on one side close to the TCO conductive film (7); the thickness of the TMB doping layer (5) is 1-20 nm, and the forbidden bandwidth is 1.6-1.9 eV; the thickness of the B2H6 doped layer (6) is 1-20 nm, and the forbidden bandwidth is 1.4-1.6 eV.
2. A method for preparing an emitter structure of a crystalline silicon heterojunction solar cell according to claim 1, comprising the following steps:
firstly, selecting a substrate N-type monocrystalline silicon wafer (1) for texturing and cleaning;
secondly, preparing the double intrinsic amorphous silicon layers on the front side and the back side by PECVD;
selecting an N-type amorphous silicon film as a light receiving surface doping layer;
fourthly, preparing an N-type amorphous silicon layer, namely an amorphous silicon doped layer N layer (3), by using plasma enhanced chemical vapor deposition;
fifthly, preparing a P-type amorphous silicon layer by using plasma chemical vapor deposition, wherein the first layer is doped with TMB to form a TMB doped layer (5), and the second layer is doped with B2H6 to form a B2H6 doped layer (6); the thickness of the TMB doping layer (5) is 1-20 nm, and the forbidden bandwidth is 1.6-1.9 eV; the thickness of the B2H6 doped layer (6) is 1-20 nm, the forbidden bandwidth is 1.4-1.6 eV, and the total thickness of the P-type amorphous silicon layer is 7-15 nm;
a sixth step of depositing a TCO conductive film (7) using a reactive ion deposition method;
seventhly, forming front and back Ag electrodes (8) through screen printing;
eighthly, curing to form good ohmic contact between the silver grid line and the TCO conductive film (7);
and ninthly, testing the electrical property of the battery.
3. The preparation method of the emitter structure of the crystalline silicon heterojunction solar cell according to claim 2, wherein the thickness of the amorphous silicon intrinsic layer (2) on the front surface and the back surface is 5-10 nm.
4. The preparation method of the emitter structure of the crystalline silicon heterojunction solar cell according to claim 2, wherein the thickness of the N layer (3) of the amorphous silicon doped layer is 4-8 nm.
5. The preparation method of the emitter structure of the crystalline silicon heterojunction solar cell as claimed in claim 2, wherein the thickness of the TCO conductive film (7) is 70-110 nm.
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| CN110459639A (en) * | 2019-08-13 | 2019-11-15 | 江苏爱康能源研究院有限公司 | Hetero-junction solar cell structure and preparation method thereof with hydrogen annealing TCO conductive film |
| CN111883621A (en) * | 2020-07-07 | 2020-11-03 | 江苏爱康能源研究院有限公司 | TCO (transparent conductive oxide) coating process method of high-efficiency crystalline silicon heterojunction solar cell |
| CN113451445A (en) * | 2021-01-08 | 2021-09-28 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Solar cell and manufacturing method thereof |
| CN112802910A (en) * | 2021-02-09 | 2021-05-14 | 通威太阳能（成都）有限公司 | High-efficiency silicon heterojunction solar cell and preparation method thereof |
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