KR101411996B1 - High efficiency solar cells - Google Patents
High efficiency solar cells Download PDFInfo
- Publication number
- KR101411996B1 KR101411996B1 KR1020080080214A KR20080080214A KR101411996B1 KR 101411996 B1 KR101411996 B1 KR 101411996B1 KR 1020080080214 A KR1020080080214 A KR 1020080080214A KR 20080080214 A KR20080080214 A KR 20080080214A KR 101411996 B1 KR101411996 B1 KR 101411996B1
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- South Korea
- Prior art keywords
- solar cell
- photovoltaic power
- film
- generation unit
- electric field
- Prior art date
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- 238000010248 power generation Methods 0.000 claims abstract description 19
- 238000005215 recombination Methods 0.000 claims abstract description 16
- 230000006798 recombination Effects 0.000 claims abstract description 16
- 230000031700 light absorption Effects 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 115
- 239000004065 semiconductor Substances 0.000 claims description 65
- 230000005684 electric field Effects 0.000 claims description 29
- 239000010409 thin film Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 45
- 229910021417 amorphous silicon Inorganic materials 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 5
- 229910004613 CdTe Inorganic materials 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 230000010748 Photoabsorption Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention relates to an improved high efficiency solar cell capable of achieving high energy conversion efficiency by preventing recombination of electron-hole pairs by applying a bias voltage to a solar cell so that charges generated by light are rapidly collected and collected. The high efficiency solar cell of the present invention includes a photovoltaic power generation unit for generating charges by light absorption, first and second electrodes provided in the photovoltaic power generation unit and having polarities different from each other, And the charge generated by the photovoltaic generation unit is collected by being flowed more quickly toward the first and second electrodes by the bias voltage applied to the bias electrode, thereby preventing the recombination of the electron-hole pairs High energy conversion efficiency can be obtained.
Solar cell, efficiency, bias, recombination
Description
The present invention relates to a solar cell, and more particularly, to a solar cell capable of achieving high energy conversion efficiency by maximally preventing recombination of electron-hole pairs by applying a bias voltage to a solar cell so that charges generated by light are rapidly collected and collected To an improved high efficiency solar cell.
Solar power generation is an infinite clean power generation technology that produces electricity from sunlight. The photovoltaic power generation system includes a solar cell (module) that generates electricity by receiving sunlight, a power control unit that converts the generated direct current into AC, and a balance of system (BOS) such as a battery that stores the generated electricity. . A solar cell is basically a diode composed of pn junctions and is divided into various types according to the material used as the light absorbing layer. Solar cells using silicon as the light absorbing layer are classified into a crystalline substrate type solar cell and a thin film type solar cell. In addition, CdTe and CIS (CuInSe2) compound thin film solar cells, III-V solar cells, dye-sensitized solar cells, and organic solar cells are typical solar cells.
Thin film solar cells are silicon based, CuInSe2 based, and CdTe thin film solar cells, depending on the light absorption layer material used. Advantages of such thin film solar cells are that they can use low cost substrates such as glass or metal plate instead of expensive silicon substrates, It is possible to manufacture solar cells at low cost by minimizing material consumption through thin film deposition inside and outside of the micron. Another advantage is that a large-area module can be manufactured using an in-line process, thereby improving productivity and reducing manufacturing cost. The types of silicon thin film solar cells are variously classified according to the deposition temperature of the thin film, the type of substrate (glass, metal plate, ceramic, silicon substrate, etc.) used and the deposition method. Crystalline silicon thin film solar cells are classified into amorphous and crystalline silicon thin film solar cells according to the crystal characteristics of the light absorption layer, and crystal silicon thin film solar cells are classified according to the crystal size and the thickness of the light absorption layer.
The amorphous silicon (a-Si: H) thin film solar cell has a very low diffusion length of the carrier due to the characteristics of the material itself, and is very low in comparison with a single crystal (or polycrystalline) silicon substrate. The collection efficiency of electron-hole pairs is very low. In general, therefore, the amorphous silicon thin film solar cell has a light absorption layer composed of an intrinsic semiconductor layer to which no impurity is added, and a pin structure in which a p-type semiconductor layer having a high doping concentration is interposed between the n-type semiconductor layer and the p-type semiconductor layer. In this structure, the photoabsorption layer is depleted by the p-layer and the n-layer having a high doping concentration at the top and bottom, and an electric field is generated inside. Therefore, the electron-hole pairs generated from the light absorbing layer by the incident light are collected by the n layer and the p layer by the drift due to the internal electric field instead of diffusion, and the electric current is generated.
In the case of an ideal device, the electric field is generated uniformly inside and the electron-hole pair flow smoothly. However, in real devices, space charge density increases at the pi and ni interfaces due to defects existing in the light absorption layer, and electric field decreases in the light absorption layer. In general, when the solar cell is exposed to light, a characteristic degradation phenomenon (Staebler-Wronski effect) occurs. The characteristics of the solar cell decrease by up to 30% depending on the thickness and physical properties of the light absorption layer. In addition, light-soaking increases the density of dangling bonds inside the light absorbing layer and decreases the internal electric field, thereby further accelerating the recombination of the electron-hole pairs generated by the light, Deterioration occurs.
On the other hand, nanocrystal (nc-Si: H) silicon thin film solar cell is a boundary material between amorphous and monocrystalline silicon. Nanocrystalline silicon, which is often called microcrystalline silicon (μc-Si: H) do. Nanocrystalline silicon has a crystal size of several tens of nanometers to several hundreds of nanometers depending on the deposition method. Amorphous phases are often present at grain boundaries, and most of the carrier recombination occurs at crystal boundaries due to the high bonding density. However, the amorphous silicon thin film solar cell has no deterioration phenomenon. Such a nanocrystalline silicon thin film solar cell is manufactured in the same pin structure as an amorphous silicon thin film solar cell because the grain size of the nanocrystalline silicon is small and contains a large amount of amorphous matrix, Although it is larger than silicon, np structure alone is not sufficient for carrier collection by diffusion.
As for the price of each component of solar power system, it is known that the module occupies the largest portion of total system price with module (60%), peripheral (25%) and installation cost (15%). Module prices, which account for 60% of the total system price, consist of board (40%, silicon), solar cell manufacturing (25%) and module assembly (35%). Considering that the market share of silicon solar cells is very high, the high price of solar power generation systems is due to the high price of solar modules, ie, the high proportion of silicon substrates that make up solar cells. The biggest problem that PV technology is currently sitting on is the high price of the system, which is a major obstacle to the massive supply of photovoltaic power generation. Therefore, energy conversion efficiency is very important for solar cells.
An object of the present invention is to provide an improved high efficiency solar cell capable of achieving a high energy conversion efficiency by preventing the recombination of electron-hole pairs as much as possible by applying a bias voltage to the solar cell so that the charge generated by light is rapidly collected and collected have.
According to an aspect of the present invention, there is provided a high-efficiency solar cell. The high-efficiency solar cell of the present invention comprises: a photovoltaic power generating unit for generating a charge by light absorption; First and second electrodes having different polarities for outputting the photovoltaic power generated by the photovoltaic generation unit to an external load; And a bias electrode for applying an electric field added to the photovoltaic power generator, wherein charges generated in the photovoltaic generator are applied to the first and second electrodes due to an electric field applied by an internal electric field and a bias voltage applied to the bias electrode, The second electrode is collected and flows more quickly toward the second electrode so that recombination of the electron-hole pairs is prevented, and high energy conversion efficiency can be obtained.
In one embodiment, the semiconductor device includes an insulating layer for electrically insulating the bias electrode.
In one embodiment, the photovoltaic power generation part includes a multi-layered light absorbing layer in which an intrinsic amorphous semiconductor film and an intrinsic microcrystalline semiconductor film are alternately repeated.
In one embodiment, the photovoltaic generator includes a heterojunction with intrinsic thin-layer (HIT) structure having an intrinsic thin film.
In one embodiment, the first and second electrodes have an integrated backside contact (IBC) structure.
In one embodiment, the photovoltaic generator includes a multi-layered antireflection film having a porous antireflection film or two or more porous antireflection films stacked.
According to the high efficiency solar cell of the present invention, the charge generated by the bias voltage applied to the bias electrode swiftly collects and collects, so that the recombination of the electron-hole pairs is prevented as much as possible and high energy conversion efficiency can be obtained. The high-efficiency solar cell of the present invention can be applied to various types of amorphous or crystalline silicon thin film type solar cells, and substrate type solar cells using single crystal or polycrystalline silicon substrates. In addition, a high efficiency solar cell can be realized by adding a bias electrode to a compound thin film solar cell of CdTe or CIS (CuInSe2), a III-V solar cell, a dye sensitized solar cell, or an organic solar cell.
For a better understanding of the present invention, a preferred embodiment of the present invention will be described with reference to the accompanying drawings. The embodiments of the present invention may be modified into various forms, and the scope of the present invention should not be construed as being limited to the embodiments described in detail below. The present embodiments are provided to enable those skilled in the art to more fully understand the present invention. Therefore, the shapes and the like of the elements in the drawings can be exaggeratedly expressed to emphasize a clearer description. It should be noted that in the drawings, the same members are denoted by the same reference numerals. Detailed descriptions of well-known functions and constructions which may be unnecessarily obscured by the gist of the present invention are omitted.
1, a general
However, the electron-hole pairs flowing by the internal electric field are recombined due to various causes in the course of flowing. The higher the recombination ratio, the lower the energy conversion efficiency. In order to overcome such a problem, the high efficiency solar cell of the present invention applies the added electric field by the bias voltage to the solar cell so that the charge generated by the light swiftly flows and collects, thereby preventing the recombination of the electron- The conversion efficiency can be obtained.
2 is a schematic diagram of a high-efficiency solar cell having a bias electrode according to the present invention.
2, a high efficiency
FIG. 3 through FIG. 6 are views showing various embodiments of a high efficiency solar cell.
Referring to FIG. 3, a thin film
When light is incident on the
Referring to FIG. 4, in another embodiment of the present invention, a thin film
5, in another embodiment of the present invention, a
As the back surface of the
In order to improve the pn junction property, the substrate type
When light is incident on the
6, a
When light is incident on the
The above-described high efficiency solar cell of the present invention can be applied to various types of amorphous or crystalline silicon thin film type solar cells, substrate type solar cells using monocrystalline or polycrystalline silicon substrates, as well as the above embodiments. In addition, a high efficiency solar cell can be realized by adding a bias electrode to a compound thin film solar cell of CdTe or CIS (CuInSe2), a III-V solar cell, a dye sensitized solar cell, or an organic solar cell.
The embodiments of the high efficiency solar cell of the present invention described above are merely illustrative and those skilled in the art will appreciate that various modifications and equivalent embodiments are possible without departing from the scope of the present invention. It will be possible. Accordingly, it is to be understood that the present invention is not limited to the above-described embodiments. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims. It is also to be understood that the invention includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.
1 is a schematic diagram of a general solar cell.
2 is a schematic diagram of a high-efficiency solar cell having a bias electrode according to the present invention.
FIG. 3 through FIG. 6 are views showing various embodiments of a high efficiency solar cell.
Description of the Related Art [0002]
10: solar cell 12: photovoltaic power generation unit
14: first electrode 16: second electrode
18: load 20: solar cell
22: photovoltaic power generation unit 24: first electrode
26: second electrode 30: bias power source
32: insulating film 34: bias electrode
36: load 40: solar cell
41: photovoltaic power generation unit 42: light absorbing layer
43: first conductivity type semiconductor film 44: second conductivity type semiconductor film
45: transparent conductive film 46: rear reflective film
47: substrate 50: solar cell
51: photovoltaic power generation unit 52: light absorbing layer
53: first conductivity type semiconductor film 54: second conductivity type semiconductor film
55: transparent conductive film 56: rear reflective film
57: substrate 60: solar cell
61: photovoltaic power generation unit 62: intrinsic semiconductor film
63: intrinsic semiconductor film 64: second conductivity type semiconductor film
65: first conductivity type semiconductor film 66: conductive film
67: conductive film 68: crystalline semiconductor substrate
69: intrinsic semiconductor film 70: solar cell
71: photovoltaic power generation unit 72: intrinsic semiconductor layer
73: second conductivity type semiconductor film 74: first conductivity type semiconductor film
75: Antireflection film 76: Antireflection film
78: crystal semiconductor substrate 80: antireflection film
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020080080214A KR101411996B1 (en) | 2008-08-16 | 2008-08-16 | High efficiency solar cells |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020080080214A KR101411996B1 (en) | 2008-08-16 | 2008-08-16 | High efficiency solar cells |
Publications (2)
Publication Number | Publication Date |
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KR20100021539A KR20100021539A (en) | 2010-02-25 |
KR101411996B1 true KR101411996B1 (en) | 2014-06-26 |
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KR1020080080214A KR101411996B1 (en) | 2008-08-16 | 2008-08-16 | High efficiency solar cells |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104882499A (en) * | 2015-05-19 | 2015-09-02 | 东南大学 | Thermovoltaic cell |
CN104964638A (en) * | 2015-06-28 | 2015-10-07 | 西安电子科技大学 | Method of measuring the forbidden band width of a strain Ge on the basis of a heterojunction capacitance-voltage method |
KR101629729B1 (en) * | 2015-09-07 | 2016-06-13 | 한국기계연구원 | Perovskite solar cell |
US20190140115A1 (en) | 2016-05-06 | 2019-05-09 | Rensselaer Polytechnic Institute | High absorption photovoltaic material and methods of making the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR900017214A (en) * | 1989-04-29 | 1990-11-15 | 정용문 | Heat treatment method of amorphous silicon solar cell |
KR20000024447A (en) * | 2000-02-15 | 2000-05-06 | 주흥로 | Avalanche photodetector device and method for manufacturing the same |
JP2003158288A (en) | 2001-11-21 | 2003-05-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photo-detector and its manufacturing method |
-
2008
- 2008-08-16 KR KR1020080080214A patent/KR101411996B1/en active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR900017214A (en) * | 1989-04-29 | 1990-11-15 | 정용문 | Heat treatment method of amorphous silicon solar cell |
KR20000024447A (en) * | 2000-02-15 | 2000-05-06 | 주흥로 | Avalanche photodetector device and method for manufacturing the same |
JP2003158288A (en) | 2001-11-21 | 2003-05-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photo-detector and its manufacturing method |
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