CN102263156A - Technology for improving conversion efficiency of solar photovoltaic battery - Google Patents
Technology for improving conversion efficiency of solar photovoltaic battery Download PDFInfo
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- CN102263156A CN102263156A CN2010102210383A CN201010221038A CN102263156A CN 102263156 A CN102263156 A CN 102263156A CN 2010102210383 A CN2010102210383 A CN 2010102210383A CN 201010221038 A CN201010221038 A CN 201010221038A CN 102263156 A CN102263156 A CN 102263156A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the technical field of a solar photovoltaic battery, relating to a technology for improving the conversion efficiency of the solar photovoltaic battery; a transparent conductive thin film layer is added on the front surface of the solar photovoltaic battery; a voltage is applied on the transparent conductive thin film layer to be used as a boosting voltage of the working of the solar photovoltaic battery; and therefore, a 'dead layer' region is eliminated, the interface recombination of photon-generated carriers is reduced, light currents output by the solar photovoltaic battery are increased, and the conversion efficiency of the solar photovoltaic battery is improved. Particularly, the technology can effectively improve the photoelectric conversion efficiency of the solar photovoltaic battery manufactured on the basis of N-type silicon series substrates.
Description
Technical field
The invention belongs to the solar-energy photo-voltaic cell technical field, relate to a kind of technology that improves the solar-energy photo-voltaic cell conversion efficiency, increase the thin layer of electrically conducting transparent at the front surface of solar-energy photo-voltaic cell, and on the thin layer of electrically conducting transparent, apply the method for voltage as the boost voltage of solar-energy photo-voltaic cell work, to improve the solar-energy photo-voltaic cell conversion efficiency.Particularly, this technology can improve the photoelectric conversion efficiency of the solar-energy photo-voltaic cell of making based on N type silicon series substrate effectively.
Background technology:
Solar-energy photo-voltaic cell belongs to a kind of in the dual mode that solar energy utilizes, and the silicon solar photovoltaic cell is arranged, the solar-energy photo-voltaic cell of compound semiconductor materials such as III-V family and cadmium sulfide, and the high-molecular organic material solar-energy photo-voltaic cell etc.Solar-energy photo-voltaic cell also can be divided into the monocrystalline solar-energy photo-voltaic cell, polycrystalline solar photovoltaic cell, crystallite or noncrystal membrane solar-energy photo-voltaic cell etc.
With n type single crystal silicon, or N type polysilicon semiconductor material is substrate, in P-N knot (P is on N) silicon solar photovoltaic cell of manufacturing, have " dead layer " zone of a photo-generated carrier, and the photo-generated carrier multidigit of sunlight short-wave band is in this zone.Can be compound fall because charge carrier is counted in the compound influence of existence and interface in " dead layer " zone in this type solar-energy photo-voltaic cell, the photoproduction in this zone and its adjacent domain, do not produce photoelectric current, the not contribution of output current of solar-energy photo-voltaic cell.The result is that its short wave response is very poor, has limited the raising of solar-energy photo-voltaic cell conversion efficiency.
Adopt the technology of passivation interface defectives such as silicon nitride film, reduce the photo-generated carrier recombination rate at interface, reach the purpose of the conversion efficiency that improves solar-energy photo-voltaic cell.The violet photocell of shallow junction, close grid and " dead layer " thin feature all to have reduced the influence in " dead layer " zone, improves the short wave response of battery, reaches the purpose of the conversion efficiency that improves solar-energy photo-voltaic cell.But these technology all can not be eliminated the existence in " dead layer " zone fully.
The silicon solar photovoltaic cell of selecting for use P type semiconductor material (silicon) to make as substrate, avoided the influence in " dead layer " zone in the solar-energy photo-voltaic cell of P-N knot (P is on N), improved the conversion efficiency of solar-energy photo-voltaic cell, but the compound influence in interface exists still also
Summary of the invention
The purpose of present technique invention, a kind of technical method that improves the solar-energy photo-voltaic cell conversion efficiency is provided, increase the thin layer of electrically conducting transparent at the front surface of solar-energy photo-voltaic cell, and on the thin layer of electrically conducting transparent, apply the boost voltage of voltage as solar-energy photo-voltaic cell work, arrive the existence of eliminating " dead layer " zone in the solar-energy photo-voltaic cell, with reduce photoproduction and count effective interface recombination rate of charge carrier, improve the output current and the solar-energy photo-voltaic cell photoelectric conversion efficiency of solar-energy photo-voltaic cell.
Technical scheme of the present invention is as follows:
At the sunlight plane of incidence, above the transparent insulation medium mask layer of solar-energy photo-voltaic cell front surface, increase the thin layer of electrically conducting transparent, cover the front surface of solar-energy photo-voltaic cell, the output electrode insulation with solar-energy photo-voltaic cell does not contact.On the thin layer of electrically conducting transparent, apply the method for the boost voltage of solar-energy photo-voltaic cell work.
To P-N knot (P is on N) solar-energy photo-voltaic cell made from the N type semiconductor substrate, on the transparent insulation medium mask layer of battery front surface, increase the thin layer of electrically conducting transparent, apply negative voltage on its transparent electrically-conductive film layer, along with the negative voltage that applies increases, be positioned at transparent insulation medium mask layer and P type semiconductor material interface, being with of P type semiconductor near surface moves up, leave the defect level zone in forbidden band, to being bent upwards, the interface shape charged region of P type semiconductor is converted to stacking states by spent condition (or anti-type state), depletion width in the P type semiconductor narrows down and so far disappears, i.e. " dead layer " zone that charge carrier is counted in photoproduction disappears.Effective interface recombination rate that charge carrier is counted in photoproduction descends thereupon, the compound minimizing in interface.No matter be that the short-wave band sunlight is counted charge carrier in the photoproduction of former " dead layer " region generating, still the long-wave band sunlight is counted charge carrier in the photoproduction that former " dead layer " zone produces, the capital is become photogenerated current by more the collection, and contribute in the output photogenerated current of solar-energy photo-voltaic cell, improve the output photogenerated current and the photoelectric conversion efficiency of solar-energy photo-voltaic cell effectively.
Description of drawings:
Fig. 1. be a schematic diagram that improves the technology of solar-energy photo-voltaic cell conversion efficiency.
Fig. 2. be the execution mode schematic diagram that improves the technology of solar-energy photo-voltaic cell conversion efficiency.
Embodiment:
Below in conjunction with accompanying drawing 2, the P-N of Si semi-conducting material knot (P is on N) solar-energy photo-voltaic cell schematic diagram specifies embodiments of the present invention.Embodiment only is used for example the present invention, and scope that should not be construed as limiting the invention and essence.
As Fig. 2:
Embodiment: 11 and 15 is output electrodes of solar-energy photo-voltaic cell, the 12nd, and the SiO of densification and free of pinholes
2Transparent insulation dielectric mask mask layer, 13 and 14 is the semi-conductive P-N knots of Si.At SiO
2On the transparent insulation dielectric mask mask layer 12, the contact electrode 22 of the thin layer 21 of deposition tin indium oxide (ITO) electrically conducting transparent and the thin layer of electrically conducting transparent.The thin layer 21 and the SiO of this electrically conducting transparent
2The thickness of transparent insulation medium mask layer 12 will be regulated, and satisfies the condition that the interference of anti-incident sunlight reflection disappears mutually.The thin layer 21 of this electrically conducting transparent and the output electrode 11 of solar-energy photo-voltaic cell and 15 insulation do not contact.
Insert negative voltage on the contact electrode 22 of transparent electrically-conductive film layer, the negative voltage that inserts is increased to, the semi-conductive surface energy band of P type Si is bent upwards P type semiconductor and SiO
2The space charge region at interface place is converted to stacking states by spent condition (or anti-type state)." dead layer " zone of solar-energy photo-voltaic cell disappears, and effective interface recombination rate that charge carrier is counted in photoproduction reduces the compound minimizing on the surface.Sunlight is counted charge carrier in most of photoproduction of former " dead layer " region generating and is collected, and contributes to the photogenerated current of output.The photogenerated current of solar-energy photo-voltaic cell output increases, and improves the photoelectric conversion efficiency of solar-energy photo-voltaic cell.
Claims (11)
1. technology that improves the solar-energy photo-voltaic cell conversion efficiency, it is characterized in that, on the transparent insulation dielectric layer surface of solar-energy photo-voltaic cell front surface, increase the transparent electrically-conductive film layer, and on the transparent electrically-conductive film layer, apply the boost voltage of solar-energy photo-voltaic cell work.
2. a kind of technology that improves the solar-energy photo-voltaic cell conversion efficiency according to claim 1, it is characterized in that, solar-energy photo-voltaic cell is made with semi-conducting material, have the solar-energy photo-voltaic cell of P-N knot or P-I-N structure, the solar-energy photo-voltaic cell front surface is a transparent insulation medium mask layer.
3. a kind of technology that improves the solar-energy photo-voltaic cell conversion efficiency according to claim 2, it is characterized in that, the transparent insulation medium mask layer of solar-energy photo-voltaic cell front surface is one deck, the interference that the perhaps passivation mask layer of sandwich construction, its thickness the satisfy anti-sunlight reflection condition that disappears mutually.
4. a kind of technology that improves the solar-energy photo-voltaic cell conversion efficiency according to claim 3, it is characterized in that, in the sandwich construction passivation mask layer of the transparent insulation medium mask layer of solar-energy photo-voltaic cell front surface, can accompany the electric charge capture layer of transparent insulation, also can not have the electric charge capture layer of transparent insulation.
5. a kind of technology that improves the solar-energy photo-voltaic cell conversion efficiency according to claim 2 is characterized in that, the transparent insulation medium mask layer of solar-energy photo-voltaic cell front surface and below it semi-conductive interface be optical flat, perhaps non-optical plane.
6. a kind of technology that improves the solar-energy photo-voltaic cell conversion efficiency according to claim 1 is characterized in that, the transparent conductive film layer of increase and the electrode insulation of solar-energy photo-voltaic cell.
7. a kind of technology that improves the solar-energy photo-voltaic cell conversion efficiency according to claim 1 is characterized in that, the interface of the transparent insulation medium mask layer of transparent electrically-conductive film layer and solar-energy photo-voltaic cell front surface is an optical flat, perhaps non-optical plane.
8. a kind of technology that improves the solar-energy photo-voltaic cell conversion efficiency according to claim 1 is characterized in that, the interference that the thickness of the transparent conductive film layer of increase satisfies the reflection of the anti-sunlight condition that disappears mutually.
9. according to claim 3 and 8 described a kind of technology that improve the solar-energy photo-voltaic cell conversion efficiency, the thickness of the transparent insulation medium mask layer of the thickness of the transparent conductive film layer that increases on the solar-energy photo-voltaic cell front surface and solar-energy photo-voltaic cell front surface will be regulated, the interference of satisfying the reflection of the anti-sunlight condition that disappears mutually.
10. a kind of technology that improves the solar-energy photo-voltaic cell conversion efficiency according to claim 1, it is characterized in that, with the transparent insulation dielectric layer of solar-energy photo-voltaic cell front surface have a common boundary below be the p N-type semiconductor N time, on the transparent conductive film layer that increases, apply negative boost voltage.
11. a kind of technology that improves the solar-energy photo-voltaic cell conversion efficiency according to claim 1, it is characterized in that, with the transparent insulation dielectric layer of solar-energy photo-voltaic cell front surface have a common boundary below be the n N-type semiconductor N time, on the transparent conductive film layer that increases, apply positive boost voltage.
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| CN2010102210383A CN102263156A (en) | 2010-05-28 | 2010-06-25 | Technology for improving conversion efficiency of solar photovoltaic battery |
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| CN201010192742.0 | 2010-05-28 | ||
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| CN2010102210383A CN102263156A (en) | 2010-05-28 | 2010-06-25 | Technology for improving conversion efficiency of solar photovoltaic battery |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199157A (en) * | 2013-04-17 | 2013-07-10 | 新疆嘉盛阳光风电科技股份有限公司 | Method of improving conversion efficiency of solar photovoltaic cell |
| CN103325884A (en) * | 2013-05-03 | 2013-09-25 | 北京工业大学 | Method for preparing broadband spectrum down-conversion and decreasing thin film layers to improve solar cell conversion efficiency |
| CN103400867A (en) * | 2013-08-06 | 2013-11-20 | 严振华 | Method for improving photoelectric conversion rate of photovoltaic cell |
| CN106233617A (en) * | 2014-05-02 | 2016-12-14 | 伏科技有限公司 | For adding solar panel system and the method for the defect in rapid regeneration and/or prevention solar panels |
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| DE19602313A1 (en) * | 1996-01-23 | 1997-07-24 | Siemens Ag | Thin film solar cell |
| EP1107319A2 (en) * | 1999-11-30 | 2001-06-13 | Sharp Kabushiki Kaisha | Thin film solar cell and fabrication method therefor |
| CN101090138A (en) * | 2007-07-02 | 2007-12-19 | 重庆大学 | P+PIN silicon photoelectric probe |
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2010
- 2010-06-25 CN CN2010102210383A patent/CN102263156A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19602313A1 (en) * | 1996-01-23 | 1997-07-24 | Siemens Ag | Thin film solar cell |
| EP1107319A2 (en) * | 1999-11-30 | 2001-06-13 | Sharp Kabushiki Kaisha | Thin film solar cell and fabrication method therefor |
| CN101090138A (en) * | 2007-07-02 | 2007-12-19 | 重庆大学 | P+PIN silicon photoelectric probe |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199157A (en) * | 2013-04-17 | 2013-07-10 | 新疆嘉盛阳光风电科技股份有限公司 | Method of improving conversion efficiency of solar photovoltaic cell |
| CN103199157B (en) * | 2013-04-17 | 2017-02-08 | 新疆嘉盛阳光风电科技股份有限公司 | Method of improving conversion efficiency of solar photovoltaic cell |
| CN103325884A (en) * | 2013-05-03 | 2013-09-25 | 北京工业大学 | Method for preparing broadband spectrum down-conversion and decreasing thin film layers to improve solar cell conversion efficiency |
| CN103325884B (en) * | 2013-05-03 | 2016-04-06 | 北京工业大学 | The method that anti-reflection plural layers improve conversion efficiency of solar cell is changed under a kind of wide spectral |
| CN103400867A (en) * | 2013-08-06 | 2013-11-20 | 严振华 | Method for improving photoelectric conversion rate of photovoltaic cell |
| CN106233617A (en) * | 2014-05-02 | 2016-12-14 | 伏科技有限公司 | For adding solar panel system and the method for the defect in rapid regeneration and/or prevention solar panels |
| US10381976B2 (en) | 2014-05-02 | 2019-08-13 | Futech | Solar panel system and method for accelerated regeneration and/or prevention of defects in solar panels |
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