KR20000024447A - Avalanche photodetector device and method for manufacturing the same - Google Patents

Abstract

PURPOSE: An avalanche optical detector and manufacturing method is provided to improve a receiving sensitivity of an optical detector by greatly increasing an amplification of a center portion of an activating region. CONSTITUTION: An n-InP buffer layer(31) is deposited on a n+-InP substrate. Ann-InGaAs optical absorption layer(32) is deposited on the n-InP buffer layer(31). One layer or a plurality of layers are deposited on the n-InGaAs optical absorption layer(32). An n-InGaAsP grading layer(33) is not doped. An n-InP field buffer layer(34) is deposited on the n-InGaAsP grading layer(33). An n-InP amplifying layer(35) is deposited on the n-InP field buffer layer(34) at 1.5-4 micro m thickness. A p+-InP diffuse layer(37) has a spatially limited pn junction. A p+-InP guiding(36) is formed to a peripheral portion of the diffuse layer(37). A p-surface electrode is formed on the diffuse layer(37). An n-surface electrode is formed to a surface.

Description

Avalanche photodetector device and method for manufacturing the same

According to the present invention, an equipotential line between a guard ring and an active region has a negative curvature in an avalanche photodetector of a Hi-Lo structure configured to apply a uniform high electric field to an amplification layer and a low electric field to an absorbing layer. It aims to create a device structure suitable for mass production by strengthening the role of the guard ring by having a negative curvature and simplifying the manufacturing process.

One of the most important devices of the optical communication, the light receiving unit is composed of a photodetector, an amplifier and an additional circuit. As a photodetector, PIN PD and APD (avalanche photodiode) are mainly used. Among the photodetectors, APD has a much higher reception sensitivity than PIN PD because of its internal gain due to avalanche amplification. The structure and operation principle of the APD will be briefly described as follows. The APD consists of a light absorbing layer in which an optical signal is incident to generate an e-h pair, an amplifying layer in which electrons or holes amplify, and an electrode for transferring an carrier to an external circuit. A grading layer may be inserted between the amplification layer and the light absorbing layer to help smoothly and quickly inject the carrier. When an optical signal is incident to generate an electron-hole pair, it is advantageous to inject holes into the amplification layer in the case of the InP amplification layer. To have such an injection structure, the light absorption layer is n-type, one side of the amplification layer is n-type, The other side should consist of p-types.

In such diode structures, pn junctions must be made only in limited areas due to capacitance. Mesa-type diodes are not suitable for APDs because of their lifetime problems since APDs are devices with very high electric fields. Therefore, in most cases, the most widely used method is to diffuse impurities in a limited area. In this case, however, the edge of the pn junction must have curvature, and avalanche amplification is greatly increased at this edge because a higher electric field is applied under the same bias voltage than the center portion. For example, if the avalanche gain factor is doubled in the center, the edges increase by more than 100 times.

Therefore, in APD, it is one of the most important and difficult tasks to make the guard ring to lower the electric field at the edge so that the amplification at the center is larger than the edge. The guard ring is very difficult to design and manufacture because the fabrication method and structure vary depending on the epistructure or doping concentration of the device.

1 shows a structure of a conventional APD for optical communication, and most APDs commercialized so far employ such a guard ring structure. The characteristic feature of this structure is that the curvature of the guard ring is increased and the guard ring should be doped as low as 3 to 8 × 10 ¹⁶ cm ^-3 as p-type, and therefore the diffusion technique is very difficult. The conventional technique requires Cd diffusion because it is difficult to obtain such a low doping concentration by the diffusion of Zn, and the diffusion process should be performed at low temperature (450-500 ° C.) for several days to several weeks. Since the guard ring is formed on n-type InP, the carrier concentration of the p-type can be made low by the compensation of electrons and holes, and in this case, the linear doped concentration change is linear. pn junction is made. In the case of linear graded junctions, the electric field is lowered, resulting in lower avalanche amplification. If the Hi-Lo structure is adopted to improve the amplification and bandwidth characteristics of the APD, such a guard ring is a problem. In other words, in the case of Hi-Lo APD, because the amplification layer uses undoped (non-carrier concentration) InP rather than n-type, it is difficult to lower the carrier concentration at the edge than the center portion and it is impossible to form a linear graded junction. The guard ring structure does not provide good characteristics.

If the amplification layer structure is p-i-n (this structure is called Hi-Lo structure) to reduce the carrier concentration of the amplification layer and apply a high electric field, the gain x bandwidth product can be made 100 GHz or more. However, since this structure cannot use the guard ring manufacturing method adopted in the conventional APD, a new concept of guard ring structure should be adopted.

New guard ring methods include a SAGCM structure (FIG. 2A) and a floating guard ring (FIG. 2B). The SAGCM structure allows the n-InP field buffer layer to be thickened in the middle so that a large electric field is applied and the edge portion is etched and kept thin so that a low electric field is applied, thus lowering avalanche amplification. It has been reported that the gain × bandwidth product using this structure can achieve more than 120 GHz. [IEEE Photonics Technology Letters, vol. 5, pp672-674, 1993] This structure has twice the crystal growth, resulting in unreliable device life and lifetime. This has a short limit. Floating guard ring APD is a new concept structure with p-i-n structured amplification layer and relatively easy to manufacture guard ring. In 1990, IEEE Photon. Tech. Lett., Vol. 2, pp 571-573,1990.

This structure has a floating guard ring 26 as shown in FIG. 2 and the active region is deeper than the surrounding guard ring. However, this structure is cumbersome to have two diffusion processes, and the diffusion depth is not precisely controlled by the drive-in of the diffusion material by performing two diffusion processes. It was difficult to adjust the width of the amplification layer thinly because the early yield could occur due to the radius of curvature of.

In order to prevent such edge breakdown and to reduce the width of the amplification layer to a thickness of 0.3 μm or less (and thus increase the gain x bandwidth product above 80 GHz), other methods of guard ring fabrication are essential.

Accordingly, the present invention is characterized in that the equipotential line between the guard ring and the active region has a negative curvature, thereby enhancing the role of the guard ring to increase the avalanche gain factor.

In order to prevent edge yielding at the edge of the active area diffusion layer, the diffusion depth of the active area is formed to be shallower than the diffusion depth of the guard ring. The ring has a structure that is electrically isolated from the active region when there is no bias.

Using the structure of the present invention, it is possible to fabricate the guard ring and the active region at the same time in one diffusion process, and to finely control the width of the amplification layer, so that a device having a high gain-bandwidth product can be manufactured, and the reproducibility can be increased. The process can be simplified, and mass production of high performance APD devices is possible.

1 is a structural diagram of a general avalanche type photodetector

2 is a structural diagram of a conventional avalanche type photodetector

3 is a structural diagram of an avalanche type photodetector proposed in the present invention

Figures 4a to 4e is a process chart of manufacturing avalanche type photodetector proposed in the present invention.

<Description of the symbols for the main parts of the drawings>

11, 21, 31: n ⁺ -InP substrate

12, 22, 32: undoped (n-type) InGaAs absorption layer

13, 23, 33: undoped (n-type) InGaAsP grading layer

14: n-InP amplification layer

15: undoped (n -type) InP

24, 34: n-InP field buffer layer

25, 35: undoped (n-type) InP amplification layer

16, 26, 36: guard ring

17, 27, 37: active area where the light signal is incident

18, 28, 38: silicon nitride surface protection film

19, 29, 39: electrode

As illustrated in FIG. 3, the APD proposed in the present invention has an n -InP buffer layer 31 stacked on an n ⁺ -InP substrate, an n -InGaAs light absorbing layer 32 stacked thereon, and one or more layers thereon. And a doped n-InGaAsP grading layer 33, an n-InP electric field buffer layer 34 stacked thereon, and an n-InP amplification layer 35 stacked thereon at a thickness of 1.5 to 4 탆. n- side electrode formed on the spatially p ⁺ -InP having a limited pn junction diffusion layer 37 and the diffusion layer formed around the p ⁺ -InP guard ring 36 and the diffusion layer on one side of p- side electrode formed on the substrate, and It consists of.

In the above configuration, the light absorbing layer 32 is n-type because it is not doped, and the doping concentration is very low, 10 ¹⁵ cm ⁻³ , and the thickness is 0.5 to 2.5 μm, and the electric field buffer layer 34 is doped with n-type. It has a charge density (thickness x carrier concentration) of 2.5 to 3.5 x 10 ¹² cm ² . In addition, since a very large electric field is applied between the diffusion layer 37 and the electric field buffer layer 34 and avalanche amplification occurs, it is called an active region, and the diameter of the active region (D in FIG. 3) is typically 20 to 100 μm. The thickness of the active region (called the amplification layer width and l _{a in} FIG. 3) is best when the thickness is 0.15 to 0.6 μm.

In the above configuration, the guard ring 36 is formed to have a ring shape around the diffusion layer and is electrically isolated from the diffusion layer. In addition, the guard ring 36 and the active region 37 in the above configuration to maintain a distance of 1 ~ 5㎛.

The process for producing the APD is described with reference to FIG. 4 as follows.

Growing a buffer layer 31, a light absorption layer 32, a grading layer 33, an electric field buffer layer 34, and an amplification layer 35 on the substrate in order to form a wafer upon epitaxy (FIG. 4A); Etching a portion of the amplification layer around the wafer so as to protrude the portion where the active region is formed on the upper surface of the wafer (FIG. 4B); After depositing a dielectric diffusion film thereon, the diffusion mask is formed on the upper surface of the portion where the active region is to be formed, and the diffusion mask is patterned to have a ring-shaped window window around it for forming a guard ring. (Step 4c); Diffusing Zn from the patterned top to form p-type InP (FIG. 4D); After removing the diffusion mask and the diffusion assist layer, a SiNx thin film is deposited on the upper layer, a window for electrode contact is formed, and a p-electrode and an n-electrode are formed (FIG. 4E).

In the epitaxial wafer formation process as shown in FIG. 4A, an n-InP buffer layer 31, an n-InGaAs light absorbing layer 32 having a thickness of 0.5 to 2.5 μm, and one layer on an n ⁺ -InP substrate, or Multiple undoped n-InGaAsP grading layer 33, n-InP electric field buffer layer (34) having a thickness and doping concentration adjusted to have a charge density (thickness x carrier concentration) of 2.5 to 3.5 x 10 ¹² cm ² thereon. ), And the undoped n-InP amplification layer 35 having a total thickness of 1.5 to 4 μm is formed by metal-organic chemical vapor deposition (MOCVD) or particle beam growth (MBE). It grows in turn using the method.

Subsequently, the step of etching around the active region etches InP around the p ⁺ -InP active region 37 as shown in FIG. 4B. At this time, the etching depth generates the difference between the guard ring and the diffusion depth of the active region, so it must be adjusted very precisely. The difference in diffusion depth ( dl _{a in} FIG. 3: etching depth) is usually 0.1 to 0.7 μm. The etching depth of InP can be precisely controlled by the method of Reactive Ion Etching (RIE) .If the precision of etching depth is impossible because there is no equipment such as RIE, the InGaAs (P) diffusion auxiliary layer is grown by selective wet etching method. Very easy to form.

Subsequently, a process of forming a diffusion mask (FIG. 4C) diffuses the silicon nitride layer on top of the n-InP amplification layer 35 for Zn-diffusion to form a pn junction on the wafer etched around the active area. After forming as a mask layer, a silicon nitride (SiNx) diffusion mask is patterned to form a diffusion window of 20 to 100 µm in diameter and at the same time have a ring-shaped window around it. 4D, Zn is diffused. The diffusion of Zn is suitable for 500 ~ 550 ℃.

In this case, since the diffusion depth at the semiconductor surface is the same, the distance from the n-InP electric field buffer layer to the diffusion interface is formed relatively far from the center of the diffusion layer. In this way, the diffusion needs to be performed only once and the depth of diffusion can be precisely adjusted so that the device has a high gain x bandwidth product.

After removing the diffusion mask and the diffusion assist layer of the device, the device fabrication is completed by forming a SiNx 38 having a window for electrode contact thereon, a p-metal formed thereon and an n-metal formed on the substrate (FIG. 4E). .

The device has various effects as follows.

First, the depth of the diffusion interface of the p ⁺ -InP active region 37 and the guard ring 36 formed by the diffusion of Zn or Cd is located deeper than the active region, so when the bias voltage is applied to the active region At the edge of 37, an equi-potential line having a negative curvature is formed, so that the breakdown voltage of the edge portion (Fig. 3A) becomes larger than the center portion of the active region. That is, the amplification is lower than the center. Can increase significantly the amplification of the central portion of the active area to maximize the characteristics of the guard ring makes it possible to improve the reception sensitivity of the light detector and can make thinner the amplification cheungpok (l _a) of the central portion, thereby improving the bandwidth characteristics.

Secondly, since Zn only needs to be diffused once, it is more economical than the conventional method (both twice). In particular, since the Zn diffusion depth can be precisely controlled, the yield of the device can be improved.

Third, since the equipotential lines of the edge portion of the diffusion layer 37 can be manufactured to have a negative curvature radius, only one guard ring is sufficient, so that the effective area of the device can be reduced, and therefore, the capacitance can be reduced. It is advantageous for ultra high speed operation.

Claims (10)

n-InP buffer layer 31 stacked on n ⁺ -InP substrate, undoped n-InGaAs light absorption layer 32 having a thickness of 0.5 to 2.5 μm, n-InGaAsP grading layer 33 composed of one or more layers ), An n-InP electric field buffer layer 34 having a charge density (thickness x carrier concentration) of 2.5 to 3.5 x 10 ¹² cm ^2, and an undoped n -InP amplifying layer 35 having a total thickness of 1.5 to 4 μm. Epitaxial wafers The upper portion of the n-InP amplification layer 35 is spatially limited to have a diameter D of 20 to 100 μm, and is formed by diffusion of p ⁺ material so that the width of the amplification layer l _a is 0.15 to 0.6 μm. p ⁺ -InP active region 37, p ⁺ -InP guard ring electrically isolated from the active region 37 around the active region, having a ring shape and formed deeper than the active region 37 An avalanche type photodetector comprising: (36), a p-plane electrode metal formed thereon, and an n-plane electrode formed on the substrate side. The distance d between the p ⁺ -InP guard ring 36 and the electric field buffer layer 34 is the distance l _a between the p ⁺ -InP active region 37 and the electric field buffer layer 34. An avalanche type photodetector, characterized in that formed smaller than about 0.1 ~ 0.7 ㎛. Forming a wafer upon epitaxy by sequentially growing a buffer layer 31, a light absorption layer 32, a grading layer 33, an electric field buffer layer 34, and an amplification layer 35 on the substrate; Etching a portion of the amplification layer around the wafer so that a portion where an active region is formed is protruded from an upper surface of the wafer; After depositing a dielectric diffusion film thereon, the diffusion mask is formed on the upper surface of the portion where the active region is to be formed, and the diffusion mask is patterned to have a ring-shaped window window around it for forming a guard ring. Process of doing; Diffusing Zn over the patterned to form p-type InP; After removing the diffusion mask and the diffusion assist layer, the SiNx thin film is deposited on the top, and a window for electrode contact is formed, and then an avalanche photodetector is formed, which comprises a process of forming a p-electrode and an n-electrode. Way. The method of claim 3, wherein the diffusion process of Zn is performed at 500 to 550 ° C. 5. 4. The method of claim 3, wherein the pn junction is formed using an ion implantation method using Be instead of the diffusion process. The method of claim 3, wherein the etching process, _A method of fabricating an avalanche photodetector, comprising: leaving an area where an active region is to be formed and etching around 0.1 to 0.7 μm with an etching depth according to _a difference in diffusion depth ( dl _a ). The method of claim 6, wherein the etching of InP is performed by using a Reactive Ion Etching (RIE) method. 4. The method of claim 3, wherein the etching depth is precisely controlled by a selective wet etching method using a diffusion assist layer. The method of manufacturing an avalanche photodetector according to claim 8, wherein InGaAs or InGaAsP which is lattice matched to InP is used as the diffusion assisting layer. In the avalanche photodiode in which a guard ring is formed on a wafer during epitaxy, In order to prevent edge yield at the edge of the active area diffusion layer, a guard ring is formed around the active area and diffused to form a guard ring in the etched area before diffusion. An avalanche photodiode characterized in that the diffusion depth of the active region is formed to be shallower than the diffusion depth of the guard ring.