CN112382685A - Double-sided ultrathin silicon-based heterojunction solar cell flexible photovoltaic module and preparation method thereof - Google Patents

Double-sided ultrathin silicon-based heterojunction solar cell flexible photovoltaic module and preparation method thereof Download PDF

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Publication number
CN112382685A
CN112382685A CN202011203114.8A CN202011203114A CN112382685A CN 112382685 A CN112382685 A CN 112382685A CN 202011203114 A CN202011203114 A CN 202011203114A CN 112382685 A CN112382685 A CN 112382685A
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solar cell
flexible
film
photovoltaic module
layer
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石建华
孟凡英
刘正新
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Shanghai Institute of Microsystem and Information Technology of CAS
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Shanghai Institute of Microsystem and Information Technology of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/049—Protective back sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to a double-sided ultrathin silicon-based heterojunction solar cell flexible photovoltaic module and a preparation method thereof, wherein the double-sided ultrathin silicon-based heterojunction solar cell flexible photovoltaic module comprises a high-light-transmission flexible surface window layer (201), a first packaging adhesive film layer (202), an ultrathin flexible SHJ solar cell array (203), a high-reflection back film layer (204), a second packaging adhesive film layer (205) and an ultralight flexible back plate (206) from top to bottom. The invention has the characteristics of high efficiency, light weight, good bending property, high reliability and the like, and is particularly suitable for being applied to space aircrafts such as flexible micro-energy systems, new energy automobiles, solar unmanned planes, airships and the like.

Description

Double-sided ultrathin silicon-based heterojunction solar cell flexible photovoltaic module and preparation method thereof
Technical Field
The invention belongs to the field of flexible photovoltaic modules, and particularly relates to a double-sided ultrathin silicon-based heterojunction solar cell flexible photovoltaic module and a preparation method thereof.
Background
The solar cell module is a core component of a photovoltaic power generation system, directly converts light energy into electric energy under the irradiation of sunlight, avoids the conversion loss of an intermediate secondary energy form, and is a high-quality new energy technology with high energy conversion efficiency, long service life, short energy recovery period, no regional limitation, no pollution and zero emission. The traditional high-efficiency solar cell module mainly takes a polycrystalline silicon and a monocrystalline silicon solar cell as main components, and the module varieties comprise a common backboard, a high-reflection backboard module, a single-glass and double-glass module, and high-density high-power laminated tile, half piece, piece assembly and other rigid modules. The assembly is relatively heavy, has extremely low bending degree and even has no bending amount, and cannot be applied to curved objects. The thin film solar cell is known as the third generation solar cell technology because of its advantages of light weight, flexible rolling, low cost, etc., and includes amorphous thin film solar cells, copper indium gallium selenide thin film solar cells, cadmium telluride thin film solar cells, fuel sensitized solar cells, perovskite solar cells, organic solar cells, etc. Through the rapid development of 20 years, the thin film solar cell not only does not develop the unique light weight, softness and flexible property, but also cannot exceed the crystalline silicon solar cell in the photoelectric conversion efficiency of the cell.
The silicon-based heterojunction (SHJ) solar cell is a technical branch of the crystalline silicon solar cell, and has become the next-generation high-efficiency solar cell technology popular in the industry due to the advantages of few process procedures, low process temperature, good double-sided characteristics, low temperature coefficient, high conversion efficiency and the like, and the worldwide record of the photoelectric conversion efficiency is close to 27%. Particularly, due to the perfect double-sided symmetry characteristic of the SHJ solar cell and the whole-process low-temperature process, theoretical calculation shows that when the crystalline silicon substrate is thinned to 90-100 mu m, the conversion efficiency of the SHJ solar cell is still basically equivalent to that of a silicon wafer with the thickness of 180 mu m. Experiments prove that when the thickness of the silicon wafer substrate is less than 110 microns, the SHJ solar cell has certain flexibility, and the thinner the silicon wafer is, the higher the flexibility of the cell is. In particular, when the wafer thickness is close to 40 μm, a cell with dimensions of 156.75 × 156.75mm can be rolled up to 360 degrees, exhibiting excellent flexibility characteristics. Unfortunately, when the thickness of the silicon wafer is less than 100 μm, the gain of the open-circuit voltage and the fill factor of the SHJ solar cell cannot fill the current loss caused by the decrease of the optical absorption due to the thickness reduction, so that the conversion efficiency is linearly decreased along with the thickness reduction, i.e., the flexibility and the high efficiency are not compatible. Therefore, it is urgently needed to develop an efficient and flexible SHJ solar cell module technology and a preparation method thereof to make up for the module power loss caused by the reduction of the thickness of the silicon wafer.
Disclosure of Invention
The invention aims to solve the technical problem of providing a double-sided ultrathin silicon-based heterojunction solar cell flexible photovoltaic module and a preparation method thereof, wherein the photovoltaic module has the characteristics of high efficiency, light weight, good bending property, high reliability and the like, and is particularly suitable for being applied to space aircrafts such as flexible micro-energy systems, new energy automobiles, solar unmanned planes, airships and the like.
The invention provides a double-sided ultrathin silicon-based heterojunction solar cell flexible photovoltaic module which comprises a high-light-transmission flexible surface window layer, a first packaging adhesive film layer, an ultrathin flexible SHJ solar cell array, a high-reflection back film layer, a second packaging adhesive film layer and an ultralight flexible back plate from top to bottom.
The high-light-transmission flexible surface window layer is one or more of special silica gel, a polyethylene terephthalate (PET) film, an ethylene vinyl fluoride (ETFE) film, a Polycarbonate (PC) film and a polyvinyl fluoride (PVF) film.
The optical transmittance of the high-light-transmission flexible surface window layer>90%, absorption loss less than 3%, and water-gas transmission rate less than 1g/m2And/day, thickness of 50 μm to 2000 μm.
The first packaging adhesive film layer and the second packaging adhesive film layer are one or two of Polyolefin (POE) adhesive films and polyethylene polyvinyl acetate (EVA) adhesive films.
The optical penetration rate of the first packaging adhesive film layer and the second packaging adhesive film layer>90%, absorption loss less than 4%, and water-gas transmission rate less than 1g/m2And/day, thickness of 30 μm to 200 μm.
The ultrathin flexible SHJ solar cell array is formed by splicing a plurality of SHJ solar cells in a series connection and parallel connection mode.
The ultrathin flexible SHJ solar cell array is formed by welding a solar cell chip through a flexible welding strip at a low temperature, wherein the welding temperature is 170-260 ℃, the welding time is 0.1-1min, and the thickness of the welding strip is 50-300 mu m.
The thickness of the solar cell chip is 50-110 μm, the metal electrode pattern of the cell is one or more of five main grids, multiple main grids and no main grid, the double-sided rate of the cell is more than 90%, and the distance between the cell and the cell string is 0.3-3.0 mm.
The high-reflection back film layer is one of aluminum foil, silver foil, aluminum plating, silver plating or a multi-layer composite reflection film, and the reflectivity is more than 95%. According to the design of the reserved space of the battery pieces during the stringing of the battery pack, the area of the reflecting film is equal to or consistent with the area of the battery piece right above or retracted or extended by 0.2-2.0 mm. As shown in fig. 4, when sunlight enters the module from the front side, light below 1000nm is substantially absorbed and utilized by the substrate silicon, and a large part of light greater than 1000nm penetrates through the substrate to cause serious loss. By adopting the reflecting film, light passing through the substrate is reflected back to the silicon substrate under the action of the reflecting film to realize secondary absorption and utilization, the spectrum utilization of a long-wave area is improved, and the current of the component is improved, so that the power of the component is improved.
The ultra-light flexible back plate is one or more of modified silica gel, a polyethylene terephthalate (PET) film, an ethylene vinyl fluoride (ETFE) film, a Polycarbonate (PC) film, a polyvinyl fluoride (PVF) film and a Polymethacrylimide (PMI) film.
The invention also provides a preparation method of the double-sided ultrathin silicon-based heterojunction solar cell flexible photovoltaic module, which comprises the following steps:
and sequentially laying a high-light-transmission flexible surface window layer, a first packaging adhesive film layer, an ultrathin flexible SHJ solar cell array, a high-reflection back film layer, a second packaging adhesive film layer and an ultralight flexible back plate from bottom to top, and performing hot-pressing integrated packaging molding, wherein the layer temperature is 70-180 ℃, the lamination pressure is 10-100kPa, and the lamination time is 10-40 min.
Advantageous effects
According to the characteristics of the solar cell chip, the material of the high-reflection back film is flexibly selected, the specific back film geometric structure is designed, the optical loss is secondarily utilized by utilizing back reflection, and on the premise of keeping stability and yield, the conversion efficiency of the ultrathin SHJ solar cell is increased, so that the power of the flexible component of the SHJ solar cell is maximized, and the specific weight of the power of the component is optimal; the method has the advantages of low cost and high stability, is completely compatible with the existing SHJ solar cell module technology, is suitable for not only the SHJ solar cell, but also other photovoltaic devices with double-sided power generation, and has wide application prospect and economic value in the field of solar cell preparation.
Drawings
FIG. 1 is a basic structure diagram of an SHJ solar cell; wherein 100 is a monocrystalline silicon wafer; 101 is an intrinsic amorphous film; 102 is a P-type doped amorphous silicon film; 103 is an N-type doped amorphous silicon film; 104 is a transparent conductive oxide film; 105 is a metal electrode.
Fig. 2 is a schematic diagram of the basic structure of the flexible assembly of the SHJ solar cell.
Fig. 3 is a schematic diagram of external quantum efficiency of SHJ solar cells for different silicon wafer substrate thicknesses.
Fig. 4 is a schematic diagram of the principle of high-reflection back film light.
Detailed Description
The invention will be further illustrated with reference to the following specific examples. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Further, it should be understood that various changes or modifications of the present invention may be made by those skilled in the art after reading the teaching of the present invention, and such equivalents may fall within the scope of the present invention as defined in the appended claims.
Example 1
According to fig. 2, the present embodiment provides a double-sided ultra-thin silicon-based heterojunction solar cell flexible photovoltaic module, which includes, from top to bottom, a high-light-transmittance flexible surface window layer 201, a first encapsulant film layer 202, an ultra-thin flexible SHJ solar cell array 203, a high-reflection back film layer 204, a second encapsulant film layer 205, and an ultra-light flexible back sheet 206.
The preparation method of the ultrathin flexible SHJ solar cell array 203 comprises the following steps: the solar cell array 203 is formed by selecting 4 ultrathin SHJ solar cells and 2 ultrathin SHJ solar cells to form a cell sub-string, setting the cell pitch to be 1mm, and welding a solder strip which is a copper sheet plated with tin, bismuth and silver and has the thickness of 0.05mm at 270 ℃.
The high-light-transmission flexible surface window layer 201 is a PET film with the thickness of 0.8 mm; the first packaging adhesive film layer 202 and the second packaging adhesive film layer 205 are both made of EVA films, and the thickness is 0.5 mm; the high-reflection back film layer 204 is made of aluminum foil, the periphery of the high-reflection back film layer is as wide as the SHJ solar cell, and the thickness of the high-reflection back film layer is 0.05 mm; the ultra-light flexible back plate 206 is made of an ETFE film with the thickness of 2 mm.
The materials are sequentially paved according to the flexible component structure shown in figure 2 from bottom to top, and are placed into a laminating machine for heating lamination, wherein the heating temperature is 180 ℃, the lamination pressure is 100kPa, and the heating time is 25 min. In the hot pressing process, the temperature of the hot pressing plate is controlled within 200 ℃, and the temperature and the pressure are finely adjusted according to the attaching effect.
Comparative example 1
Fig. 1 is a schematic diagram of a basic structure of an SHJ solar cell in the prior art. During manufacturing, the solar cell takes an n-type monocrystalline silicon wafer 100 as a substrate, and is subjected to surface texturing and chemical cleaning to form a clean pyramid light limiting structure; then depositing an intrinsic silicon-based film 101 and a p-type doped silicon-based film 103 laminated layer on the front surface of the silicon wafer 100 by using methods such as Plasma Enhanced Chemical Vapor Deposition (PECVD), metal thermal catalytic chemical vapor deposition (Cat-CVD), Hot wire chemical vapor deposition (Hot-wire CVD) and the like, and depositing an intrinsic silicon-based film 101 and an n-type doped silicon-based film 103 laminated layer on the back surface of the silicon wafer; then depositing a Transparent Conducting Oxide (TCO) film 104 on the amorphous silicon-based film 102 and the amorphous silicon-based film 103 respectively; and then, the metal electrode 105 is manufactured by traditional metallization technologies such as screen printing and the like, so that the double-sided light-receiving solar cell with a symmetrical structure is formed.
In order to make the SHJ solar cell flexible, it is necessary to control the thickness of the crystalline silicon substrate to be less than 100 μm, and a common method is to etch off an excessive amount in a de-damage step of the texturing cleaning. The weight reduction was controlled to be 3.0g or less (1g about 17 μm) taking the thickness of the wafer as an example of 150. mu.m. The more weight reduction, the better the flexibility of the resulting cell and the lower the conversion efficiency. The reason for the inefficiency of the foil is mainly the extreme degradation of the long-wave response, as shown by the spectral quantum response of the solar cell of fig. 3. Particularly, when the thickness of the crystalline silicon substrate is reduced, all process control of the solar cell needs to be upgraded and optimized, and cell damage caused in the preparation process is reduced.
In the comparative example, a monocrystalline N-type silicon wafer with the thickness of 160 +/-10 microns is selected as a solar cell substrate, and the size is 156.76 × 156.75 mm; 4.0g of etching amount for etching, the thickness of the silicon wafer after etching is about 90 μm, and the pyramid size is 2 μm-7 μm; preparing an amorphous silicon film by adopting a PECVD (plasma enhanced chemical vapor deposition) technology, wherein the thickness of the amorphous film is required to be 15-25 nm, the minority carrier lifetime after passivation is more than 3mS, and im-Voc is more than 740 mV; preparing the TCO film by adopting a reactive plasma technology, wherein the thickness is required to be 80 +/-10 nm, and the square resistance is required to be 40 omega/□ -200 omega/□; the metal electrode is prepared by adopting a screen printing technology, the width of a grid line is required to be 30-70 mu m, and the curing temperature is required to be below 220 ℃.
The photovoltaic modules obtained in example 1 and comparative example 1 were tested and the results are shown in table 1:
TABLE 1
Figure BDA0002756101580000041
The table shows that the invention has higher flexibility, higher flexibility and higher output power. Meanwhile, the preparation method is also suitable for double-sided PERC solar cells, Topcon solar cells, perovskite solar cells, gallium arsenide thin film solar cells, copper indium gallium selenide thin film solar cells, amorphous silicon thin film solar cells and the like.

Claims (9)

1. The utility model provides a flexible photovoltaic module of two-sided ultra-thin silicon-based heterojunction solar cell which characterized in that: the solar cell comprises a high-light-transmission flexible surface window layer (201), a first packaging adhesive film layer (202), an ultrathin flexible SHJ solar cell array (203), a high-reflection back film layer (204), a second packaging adhesive film layer (205) and an ultralight flexible back plate (206) from top to bottom.
2. The photovoltaic module of claim 1, wherein: the high-light-transmission flexible surface window layer (201) is one or more of special silica gel, a polyethylene terephthalate film, an ethylene-fluorine-ethylene film, a polycarbonate film and a fluorine-ethylene film.
3. The photovoltaic module of claim 1, wherein: the first packaging adhesive film layer (202) and the second packaging adhesive film layer (205) are one or two of a polyolefin adhesive film and a polyethylene polyvinyl acetate adhesive film.
4. The photovoltaic module of claim 1, wherein: the ultrathin flexible SHJ solar cell array (203) is formed by splicing a plurality of SHJ solar cells in series and parallel.
5. The photovoltaic module of claim 4, wherein: the ultrathin flexible SHJ solar cell array (203) is formed by welding a solar cell chip through a flexible welding strip at a low temperature, wherein the welding temperature is 170-260 ℃, the welding time is 0.1-1min, and the thickness of the welding strip is 50-300 mu m.
6. The photovoltaic module of claim 5, wherein: the thickness of the solar cell chip is 50-110 μm, the metal electrode pattern of the cell is one or more of five main grids, multiple main grids and no main grid, the double-sided rate of the cell is more than 90%, and the distance between the cell and the cell string is 0.3-3.0 mm.
7. The photovoltaic module of claim 1, wherein: the high-reflection back film layer (204) is one of aluminum foil, silver foil, aluminum plating, silver plating or a multi-layer composite reflection film.
8. The photovoltaic module of claim 1, wherein: the ultra-light flexible back plate (206) is one or more of modified silica gel, a polyethylene terephthalate film, an ethylene-fluorine-ethylene film, a polycarbonate film, a fluorine-ethylene film and a polymethacrylimide film.
9. A method for preparing the double-sided ultrathin silicon-based heterojunction solar cell flexible photovoltaic module as claimed in claim 1, comprising:
sequentially laying the structure from bottom to top, and then carrying out hot-press integrated packaging molding, wherein the layer temperature is 70-180 ℃, the lamination pressure is 10-100kPa, and the lamination time is 10-40 min.
CN202011203114.8A 2020-11-02 2020-11-02 Double-sided ultrathin silicon-based heterojunction solar cell flexible photovoltaic module and preparation method thereof Pending CN112382685A (en)

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CN113178501A (en) * 2021-04-06 2021-07-27 中国科学院上海微系统与信息技术研究所 Flexible photovoltaic module and preparation method thereof
CN113430497A (en) * 2021-07-28 2021-09-24 中威新能源(成都)有限公司 Double-sided coating method and double-sided coating equipment for flexible substrate
WO2023036288A1 (en) * 2021-09-13 2023-03-16 中能创光电科技(常州)有限公司 Flexible photovoltaic cell assembly and manufacturing method therefor

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CN106299002A (en) * 2016-09-14 2017-01-04 中国电子科技集团公司第四十八研究所 Flexible solar cell assembly and its preparation method and application
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Publication number Priority date Publication date Assignee Title
US20120183792A1 (en) * 2009-09-29 2012-07-19 Toyo Boseki Kabushiki Kaisha Polyester film for solar cells
CN103400885A (en) * 2013-08-14 2013-11-20 英利集团有限公司 Black solar battery component
CN104465892A (en) * 2014-12-31 2015-03-25 中国科学院上海微系统与信息技术研究所 Method for manufacturing photovoltaic modules interconnected on same sides of adjacent solar cells in solar cell string
CN106299002A (en) * 2016-09-14 2017-01-04 中国电子科技集团公司第四十八研究所 Flexible solar cell assembly and its preparation method and application
CN206194762U (en) * 2016-11-03 2017-05-24 新奥光伏能源有限公司 Photovoltaic assembly

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113178501A (en) * 2021-04-06 2021-07-27 中国科学院上海微系统与信息技术研究所 Flexible photovoltaic module and preparation method thereof
CN113430497A (en) * 2021-07-28 2021-09-24 中威新能源(成都)有限公司 Double-sided coating method and double-sided coating equipment for flexible substrate
WO2023036288A1 (en) * 2021-09-13 2023-03-16 中能创光电科技(常州)有限公司 Flexible photovoltaic cell assembly and manufacturing method therefor

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