CN210156405U - Heterojunction cell structure with hydrogen annealed TCO conductive film - Google Patents
Heterojunction cell structure with hydrogen annealed TCO conductive film Download PDFInfo
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- CN210156405U CN210156405U CN201921303882.3U CN201921303882U CN210156405U CN 210156405 U CN210156405 U CN 210156405U CN 201921303882 U CN201921303882 U CN 201921303882U CN 210156405 U CN210156405 U CN 210156405U
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Abstract
The utility model relates to a heterojunction battery structure with hydrogen annealing TCO conducting film, which comprises a silicon substrate (1), wherein amorphous silicon intrinsic layers (2) are arranged on the two sides of the silicon substrate (1), amorphous silicon doped layers (3) are arranged on the outer sides of the amorphous silicon intrinsic layers (2), and TCO conducting films (4) are arranged on the outer sides of the amorphous silicon doped layers (3); the method is characterized in that: and an annealing layer (6) is formed on the outer side of the TCO conductive film (4) through hydrogen annealing treatment, and a plurality of Ag electrodes (5) are arranged on the outer side of the annealing layer (6). The utility model can effectively solve the problem that the transmittance and the conductivity of the TCO film prepared at low temperature are contradictory, so that the TCO conductive film obtains better transmittance and conductivity, thereby improving the photoelectric performance of the HJT solar cell.
Description
Technical Field
The utility model relates to a high-efficient battery technical field of photovoltaic especially relates to a heterojunction battery structure with hydrogen annealing TCO conductive film.
Background
With the rapid development of photovoltaic technology, the conversion efficiency of crystalline silicon solar cells is improved year by year. In the current photovoltaic industry, the conversion efficiency of monocrystalline silicon solar cells has reached more than 20%, and the conversion efficiency of polycrystalline silicon solar cells has reached more than 18.5%. However, the silicon-based solar cells produced in large scale and having a conversion efficiency of 22.5% or more are only the Back Contact (IBC) of SunPower corporation in usa and the amorphous silicon/crystalline silicon Heterojunction (HJT) with Intrinsic Thin layer of panasonic corporation in japan. Compared with the IBC solar cell, the HJT cell has the advantages of less energy consumption, simple process flow, small temperature coefficient and the like, and the advantages are also the reasons that the HJT solar cell can be distinguished from a plurality of high-efficiency silicon-based solar cell schemes.
At present, China is popularizing distributed solar photovoltaic power generation, and due to the fact that roof resources are limited, and the distributed photovoltaic power generation requires a solar cell module with high conversion efficiency, the HJT solar cell has the advantages of high efficiency and double-sided power generation, and the distributed solar cell module shows wide application prospects in distributed photovoltaic power stations.
As shown in fig. 1, for the electrode structure of the HJT cell in the prior art, the conventional method for preparing the TCO of the HJT cell directly adopts multiple targets with the same gas flow and the same power, and the properties of the whole TCO film are the same. The TCO film mainly plays a role in carrier transmission, antireflection and amorphous silicon film protection. Due to the characteristics of the amorphous silicon thin film, the low-temperature deposition is adopted in the prior art when the TCO thin film is prepared, the silver electrode is directly printed after the preparation is completed, the TCO thin film is not processed, the transmission and the conductivity of the TCO conductive film are contradictory, and the high transmission rate and the high conductivity cannot be obtained simultaneously, so that the prepared TCO thin film cannot obtain the excellent transmission rate and the excellent conductivity, and the photoelectric performance of the HJT solar cell is influenced.
SUMMERY OF THE UTILITY MODEL
The utility model aims to overcome the aforesaid not enough, provide a heterojunction cell structure with hydrogen annealing TCO conductive film, make the TCO conductive film obtain better transmissivity and conductivity, promote heterojunction solar cell performance.
The purpose of the utility model is realized as follows:
a heterojunction battery structure with a hydrogen annealing TCO conductive film comprises a silicon substrate, wherein amorphous silicon intrinsic layers are arranged on two sides of the silicon substrate, amorphous silicon doped layers are arranged on the outer sides of the amorphous silicon intrinsic layers, and the TCO conductive film is arranged on the outer sides of the amorphous silicon doped layers; and forming an annealing layer on the outer side of the TCO conductive film through hydrogen annealing treatment.
A heterojunction battery structure with a hydrogen annealing TCO conductive film is characterized in that a plurality of Ag electrodes are arranged on the outer sides of annealing layers.
A heterojunction cell structure with a hydrogen annealing TCO conductive film is provided, and the annealing temperature is 160-200 ℃.
A heterojunction cell structure with a hydrogen annealing TCO conductive film has annealing time of 10-20 min.
A heterojunction cell structure with hydrogen annealing TCO conductive film, the annealing pressure is 120-300 pa.
A heterojunction cell structure with a hydrogen annealing TCO conductive film is provided, and the thickness of an amorphous silicon intrinsic layer is 5-10 nm.
The heterojunction battery structure with the hydrogen annealing TCO conductive film is characterized in that an amorphous silicon doping layer on a light receiving surface of a silicon substrate is an n-type amorphous silicon doping layer, an amorphous silicon doping layer on a backlight surface of the silicon substrate is a p-type amorphous silicon doping layer, the thickness of the n-type amorphous silicon doping layer is 4-8 nm, and the thickness of the p-type amorphous silicon doping layer is 7-15 nm.
A heterojunction cell structure with a hydrogen annealed TCO conductive film is provided, and the thickness of the TCO conductive film is 70-110 nm.
Compared with the prior art, this practical beneficial effect is:
the hydrogen environment annealing is carried out after the TCO conductive film is deposited on two sides, the problem that the transmittance and the conductivity of the TCO film prepared at low temperature are contradictory can be effectively solved, and the TCO conductive film obtains better transmittance and conductivity, so that the photoelectric performance of the HJT solar cell is improved.
Drawings
Fig. 1 is a schematic structural diagram of a conventional heterojunction solar cell.
Fig. 2 is a schematic structural diagram of a heterojunction solar cell according to the present invention.
Wherein:
the solar cell comprises a silicon substrate 1, an amorphous silicon intrinsic layer 2, an amorphous silicon doped layer 3, a TCO conductive film 4, an Ag electrode 5 and an annealing layer 6.
Detailed Description
Example 1:
referring to fig. 2, the utility model relates to a heterojunction battery structure with hydrogen annealing TCO conductive film, it includes silicon substrate 1, silicon substrate 1's two-sided all is equipped with amorphous silicon intrinsic layer 2, the outside on amorphous silicon intrinsic layer 2 all is equipped with amorphous silicon doping layer 3, the outside on amorphous silicon doping layer 3 all is equipped with TCO conductive film 4, the 4 outsides of TCO conductive film form annealing layer 6 through hydrogen annealing, annealing layer 6's the outside all is equipped with a plurality of Ag electrodes 5.
The annealing temperature of the hydrogen annealing treatment is 170 ℃, the annealing time is 18min, and the annealing pressure is 160 pa.
The utility model relates to a preparation method of heterojunction battery structure with hydrogen annealing TCO conducting film, which comprises the following steps:
(1) texturing and cleaning a silicon substrate 1 with the size of 156.75mm and the thickness of 180 um;
(2) preparing a double-sided intrinsic amorphous silicon layer 2 with the thickness of 6nm by PECVD;
(3) preparing an n-type amorphous silicon doped layer by using plasma enhanced chemical vapor deposition, wherein the thickness is 6 nm;
(4) preparing a p-type amorphous silicon doped layer by using plasma chemical vapor deposition, wherein the total thickness is 10 nm;
(5) depositing a double-sided TCO conductive film 4 by using a PVD method, wherein the thickness is 100 nm;
(6) annealing in a hydrogen environment, wherein the annealing temperature is 170 ℃, the annealing time is 18min, and the annealing pressure is 160 pa;
(7) forming front and back Ag electrodes 5 by screen printing;
(8) curing to form good ohmic contact between the silver grid line and the TCO conductive film 4;
(9) a test of the electrical performance of the cells was conducted.
Example 2:
referring to fig. 2, the utility model relates to a heterojunction battery structure with hydrogen annealing TCO conductive film, it includes silicon substrate 1, silicon substrate 1's two-sided all is equipped with amorphous silicon intrinsic layer 2, the outside on amorphous silicon intrinsic layer 2 all is equipped with amorphous silicon doping layer 3, the outside on amorphous silicon doping layer 3 all is equipped with TCO conductive film 4, the 4 outsides of TCO conductive film form annealing layer 6 through hydrogen annealing, annealing layer 6's the outside all is equipped with a plurality of Ag electrodes 5.
The annealing temperature of the hydrogen annealing treatment is 185 ℃, the annealing time is 14min, and the annealing pressure is 210 pa.
The utility model relates to a preparation method of heterojunction battery structure with hydrogen annealing TCO conducting film, which comprises the following steps:
(1) texturing and cleaning a silicon substrate 1 with the size of 156.75mm and the thickness of 180 um;
(2) preparing a double-sided intrinsic amorphous silicon layer 2 with the thickness of 6nm by PECVD;
(3) preparing an n-type amorphous silicon doped layer by using plasma enhanced chemical vapor deposition, wherein the thickness is 6 nm;
(4) preparing a p-type amorphous silicon doped layer by using plasma chemical vapor deposition, wherein the total thickness is 10 nm;
(5) depositing a double-sided TCO conductive film 4 by using a PVD method, wherein the thickness is 100 nm;
(6) annealing in a hydrogen environment, wherein the annealing temperature is 185 ℃, the annealing time is 14min, and the annealing pressure is 210 pa;
(7) forming front and back Ag electrodes 5 by screen printing;
(8) curing to form good ohmic contact between the silver grid line and the TCO conductive film 4;
(9) a test of the electrical performance of the cells was conducted.
Example 3:
referring to fig. 2, the utility model relates to a heterojunction battery structure with hydrogen annealing TCO conductive film, it includes silicon substrate 1, silicon substrate 1's two-sided all is equipped with amorphous silicon intrinsic layer 2, the outside on amorphous silicon intrinsic layer 2 all is equipped with amorphous silicon doping layer 3, the outside on amorphous silicon doping layer 3 all is equipped with TCO conductive film 4, the 4 outsides of TCO conductive film form annealing layer 6 through hydrogen annealing, annealing layer 6's the outside all is equipped with a plurality of Ag electrodes 5.
The annealing temperature of the hydrogen annealing treatment is 200 ℃, the annealing time is 10min, and the annealing pressure is 250 pa.
The utility model relates to a preparation method of heterojunction battery structure with hydrogen annealing TCO conducting film, which comprises the following steps:
(1) texturing and cleaning a silicon substrate 1 with the size of 156.75mm and the thickness of 180 um;
(2) preparing a double-sided intrinsic amorphous silicon layer 2 with the thickness of 6nm by PECVD;
(3) preparing an n-type amorphous silicon doped layer by using plasma enhanced chemical vapor deposition, wherein the thickness is 6 nm;
(4) preparing a p-type amorphous silicon doped layer by using plasma chemical vapor deposition, wherein the total thickness is 10 nm;
(5) depositing a double-sided TCO conductive film 4 by using a PVD method, wherein the thickness is 100 nm;
(6) annealing in a hydrogen environment, wherein the annealing temperature is 200 ℃, the annealing time is 10min, and the annealing pressure is 250 pa;
(7) forming front and back Ag electrodes 5 by screen printing;
(8) curing to form good ohmic contact between the silver grid line and the TCO conductive film 4;
(9) a test of the electrical performance of the cells was conducted.
With this practical embodiment data and the prior art contrast of the TCO conducting film heterojunction battery structure that does not pass through hydrogen annealing processing, this practicality and prior art's electrical property contrast refer to the following table, mainly embody from open circuit voltage Voc, short circuit current Isc and fill factor FF, can obtain this practical promotion of solar cell electrical property parameter, make solar cell's conversion efficiency Eta have absolute 0.15% promotion.
The above is only a specific application example of the present invention, and the protection scope of the present invention is not limited at all. All the technical solutions formed by equivalent transformation or equivalent replacement fall within the protection scope of the present application.
Claims (8)
1. A heterojunction battery structure with a hydrogen annealing TCO conductive film comprises a silicon substrate (1), wherein amorphous silicon intrinsic layers (2) are arranged on two sides of the silicon substrate (1), amorphous silicon doping layers (3) are arranged on the outer sides of the amorphous silicon intrinsic layers (2), and TCO conductive films (4) are arranged on the outer sides of the amorphous silicon doping layers (3); the method is characterized in that: and forming an annealing layer (6) on the outer side of the TCO conductive film (4) through hydrogen annealing treatment.
2. The heterojunction cell structure with hydrogen annealed TCO conductive film of claim 1, wherein: and a plurality of Ag electrodes (5) are arranged on the outer sides of the annealing layers (6).
3. The heterojunction cell structure with hydrogen annealed TCO conductive film of claim 1, wherein: the annealing temperature is 160-200 ℃.
4. The heterojunction cell structure with hydrogen annealed TCO conductive film of claim 1, wherein: the annealing time is 10-20 min.
5. The heterojunction cell structure with hydrogen annealed TCO conductive film of claim 1, wherein: the annealing pressure is 120-300 pa.
6. The heterojunction cell structure with hydrogen annealed TCO conductive film of claim 1, wherein: the thickness of the amorphous silicon intrinsic layer (2) is 5-10 nm.
7. The heterojunction cell structure with hydrogen annealed TCO conductive film of claim 1, wherein: the amorphous silicon doping layer (3) on the light receiving surface of the silicon substrate (1) is an n-type amorphous silicon doping layer, the amorphous silicon doping layer (3) on the backlight surface of the silicon substrate (1) is a p-type amorphous silicon doping layer, the thickness of the n-type amorphous silicon doping layer is 4-8 nm, and the thickness of the p-type amorphous silicon doping layer is 7-15 nm.
8. The heterojunction cell structure with hydrogen annealed TCO conductive film of claim 1, wherein: the thickness of the TCO conductive film (4) is 70-110 nm.
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| CN110459639A (en) * | 2019-08-13 | 2019-11-15 | 江苏爱康能源研究院有限公司 | Hetero-junction solar cell structure and preparation method thereof with hydrogen annealing TCO conductive film |
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| CN110459639A (en) * | 2019-08-13 | 2019-11-15 | 江苏爱康能源研究院有限公司 | Hetero-junction solar cell structure and preparation method thereof with hydrogen annealing TCO conductive film |
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Effective date of registration: 20220322 Address after: 313100 zheneng Smart Energy Technology Industrial Park, Meishan Town, Changxing County, Huzhou City, Zhejiang Province Patentee after: Zhejiang Aikang Photoelectric Technology Co.,Ltd. Patentee after: JIANGSU AKCOME ENERGY RESEARCH INSTITUTE Co.,Ltd. Address before: No. 188, Huachang Road, yangshe Town, Zhangjiagang City, Suzhou City, Jiangsu Province Patentee before: JIANGSU AKCOME ENERGY RESEARCH INSTITUTE Co.,Ltd. |
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Effective date of registration: 20221110 Address after: 313100 in the factory area of Zhejiang Aikang Photoelectric Technology Co., Ltd., zheneng Smart Energy Technology Industrial Park, Meishan Town, Changxing County, Huzhou City, Zhejiang Province Patentee after: Huzhou Aikang Photoelectric Technology Co.,Ltd. Patentee after: Zhejiang Aikang Photoelectric Technology Co.,Ltd. Patentee after: JIANGSU AKCOME ENERGY RESEARCH INSTITUTE Co.,Ltd. Address before: 313100 zheneng Smart Energy Technology Industrial Park, Meishan Town, Changxing County, Huzhou City, Zhejiang Province Patentee before: Zhejiang Aikang Photoelectric Technology Co.,Ltd. Patentee before: JIANGSU AKCOME ENERGY RESEARCH INSTITUTE Co.,Ltd. |