CN111063757A - Efficient crystalline silicon/amorphous silicon heterojunction solar cell and preparation method thereof - Google Patents
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Abstract
The invention discloses a high-efficiency crystalline silicon/amorphous silicon heterojunction solar cell, which comprises a silicon layer substrate, an intrinsic amorphous silicon layer I arranged on the front side of the silicon layer substrate and an intrinsic amorphous silicon layer II arranged on the back side of the silicon layer substrate; the back of the second intrinsic amorphous silicon layer is sequentially provided with a doped amorphous silicon layer A and a TCO layer I, and the back of the second intrinsic amorphous silicon layer further comprises: the light receiving surface doping layer is arranged on the front surface of the intrinsic amorphous silicon layer I, and the TCO layer II is arranged on the front surface of the light receiving surface doping layer; the light receiving surface doping layer at least comprises an amorphous silicon doping layer B and a microcrystalline silicon doping layer. The high-efficiency crystalline silicon/amorphous silicon heterojunction solar cell prepared by the invention reduces the parasitic absorption of amorphous silicon on the illuminated surface of the HJT cell, improves the conductivity of the amorphous silicon layer on the illuminated surface, and has excellent optical performance and electrical performance.
Description
Technical Field
The invention belongs to the field of solar cell manufacturing, and relates to a high-efficiency crystalline silicon/amorphous silicon heterojunction solar cell and a preparation method thereof.
Background
Solar energy is one of the most efficient renewable resources due to its characteristics of cleanness, safety and no pollution. Photovoltaic technology, one of the most important applications of solar energy, can effectively change energy consumption structures and reduce the global warming and the growing deterioration trend of ecological environment. Therefore, the vigorous development of photovoltaic technology has profound and significant significance.
With rapid progress and development of photovoltaic technology, the conversion efficiency of the crystalline silicon solar cell is improved year by year, and the conversion efficiency of the crystalline silicon solar cell in the current photovoltaic industry reaches more than 20%. Meanwhile, more and more attention is paid to the development of high-efficiency batteries, especially silicon-based Heterojunction (HJT) solar batteries. Because the HJT becomes one of the most potential important research directions which can compete with other energy technologies, the HJT has the advantages of short manufacturing process and low preparation process temperature, and has the advantages of high conversion efficiency, high open-circuit voltage, low temperature coefficient, no Light Induced Degradation (LID), no induced degradation (PID), suitability for manufacturing a bendable battery assembly by using a thin silicon wafer, high generated energy and the like.
The HJT cell is formed by depositing thin intrinsic amorphous silicon films on the front and back surfaces of a silicon wafer for passivation, and then depositing doped p and n amorphous silicon layers on the front and back intrinsic layers respectively to form a heterojunction cell structure (p-aSi \ i-aSi \ c-Si \ i-aSi \ n-aSi). In the prior art, the amorphous silicon in the HJT cell mainly comprises intrinsic amorphous silicon and doped amorphous silicon, the intrinsic amorphous silicon is very important for the passivation effect of a c-Si interface, and the high-quality passivation layer can reduce interface recombination, so that the minority carrier lifetime and the open-circuit voltage are prolonged. The light receiving surface doped amorphous silicon layer has more defect density due to the fact that good conductivity is guaranteed, impurity atoms are doped, parasitic absorption to sunlight is more, the utilization rate of light is affected, and short-circuit current of the HJT battery is lower, so that the advantage that the HJT battery gives full play to high open voltage is limited, and the light receiving surface doped amorphous silicon layer is a key factor affecting competitiveness and mass production scale of the HJT battery in the photovoltaic industry.
In order to solve the problems, the invention provides the high-efficiency crystalline silicon/amorphous silicon heterojunction solar cell and the preparation method thereof.
Disclosure of Invention
In view of the above, the crystalline silicon/amorphous silicon heterojunction solar cell and the preparation method thereof provided by the invention have the advantages that the crystalline silicon/amorphous silicon heterojunction solar cell prepared by the invention reduces the parasitic absorption of amorphous silicon on the light receiving surface of the HJT cell, improves the conductivity of the amorphous silicon layer on the light receiving surface, and has excellent optical performance and electrical performance.
A high efficiency crystalline/amorphous silicon heterojunction solar cell, comprising: the silicon substrate, the intrinsic amorphous silicon layer I arranged on the front side of the silicon substrate and the intrinsic amorphous silicon layer II arranged on the back side of the silicon substrate; the back of the second intrinsic amorphous silicon layer is sequentially provided with a doped amorphous silicon layer A and a TCO layer I, and the back of the second intrinsic amorphous silicon layer further comprises: the light receiving surface doping layer is arranged on the front surface of the intrinsic amorphous silicon layer I, and the TCO layer II is arranged on the front surface of the light receiving surface doping layer;
the light receiving surface doping layer at least comprises a doping microcrystalline silicon layer.
Preferably, the light receiving surface doping layer comprises a doped microcrystalline silicon layer; or the front surface of the doped microcrystalline silicon layer is provided with a doped amorphous silicon layer B; or a doped amorphous silicon layer B is arranged on the back of the doped microcrystalline silicon layer; or the front surface and the back surface of the doped microcrystalline silicon layer are respectively provided with a doped amorphous silicon layer B.
Preferably, the doped microcrystalline silicon layer has a refractive index of 3.3 to 3.8, and the doped amorphous silicon layer has a refractive index of 3.8 to 4.3.
Preferably, the thickness of the doped layer on the light receiving surface is 3-10nm, the thickness of the doped amorphous silicon layer B is 0-9nm, and the thickness of the doped microcrystalline silicon layer is 1-10 nm.
Preferably, the thicknesses of the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer are both 3-10nm, the thickness of the doped amorphous silicon layer A is 3-20nm, and the thicknesses of the first TOC layer and the second TOC layer are both 70-120 nm.
Amorphous silicon has about 500 times stronger absorption of light than crystalline silicon, and when an amorphous silicon thin film having a thickness of about 1 μm is formed on a substrate such as glass, energy of light can be efficiently absorbed. The amorphous silicon thin film battery is 100 times thinner than the crystalline silicon battery, the films can be attached to cheap substrate mediators such as glass, active plastics or stainless steel, the variation is very various, and a large amount of material cost can be saved, but the photoelectric conversion efficiency of the amorphous silicon thin film battery is far lower than that of the crystalline silicon, the photoelectric conversion efficiency is not more than 10 percent all the time, and the conversion efficiency of the crystalline silicon reaches more than 20 percent, so the amorphous silicon and the microcrystalline silicon form a light receiving surface doping structure optimizing layer, the light transmittance of the amorphous silicon layer of the light receiving surface can be improved, the resistivity is reduced, the short-circuit current of the HJT battery is improved, and the filling factor is improved.
The preparation method of the high-efficiency crystalline silicon/amorphous silicon heterojunction solar cell comprises the following steps:
(1) preparation of a silicon layer substrate: texturing an N-type monocrystalline silicon wafer with the thickness of 160-;
(2) preparing an intrinsic amorphous silicon layer: preparing a first intrinsic amorphous silicon layer on the front side of the silicon layer substrate through vapor deposition, and preparing a second intrinsic amorphous silicon layer on the back side of the silicon layer substrate;
(3) preparing a light receiving surface doping layer and an amorphous silicon layer: preparing an n-type amorphous silicon/microcrystalline silicon light-receiving surface doped layer on the front surface of the first intrinsic amorphous silicon layer through vapor deposition, and preparing an n-type amorphous silicon layer on the back surface of the second intrinsic amorphous silicon layer;
(4) preparing TCO layer: depositing a TCO layer II on the front side of the light-receiving surface doping layer by a magnetron sputtering method, and depositing a TCO layer I on the back side of the n-type amorphous silicon layer;
(5) the TCO layer II and the TCO layer I are formed into silver metal electrodes on the front side and the back side through screen printing, the width of a main grid is 1-3mm, the number of the main grids is 2-5, the width of a silver auxiliary grid line is 50-70 mu m, and the number of lines is 90-110;
(6) sintering the structure formed in the step (5) to form good ohmic contact between metal and silicon, and thus obtaining the high-efficiency crystalline silicon/amorphous silicon heterojunction solar cell;
(7) and (4) carrying out electrical property test on the high-efficiency crystalline silicon/amorphous silicon heterojunction solar cell obtained in the step (6).
Preferably, the vapor deposition technology of steps (2) and (3) is plasma enhanced chemical vapor deposition or hot wire chemical vapor deposition.
Preferably, the light-receiving-surface doped layer in the step (3) is formed by reacting silane, hydrogen and a doping gas (a gas containing boron or phosphorus) in the same reaction chamber.
Preferably, the doping of amorphous silicon and the doping of microcrystalline silicon in the light receiving surface doping layer in the step (3) are realized by adjusting the proportion of hydrogen in the reaction gas, and the light transmittance and the electric conductivity of the doping of amorphous silicon and the doping of microcrystalline silicon are realized by adjusting parameters such as gas flow, pressure and power.
Compared with the prior art, the invention has the following beneficial effects: after the structure is adopted, the light receiving surface is doped with the amorphous silicon layer, and the doped layer structure of the light receiving surface of the crystalline silicon/amorphous silicon heterojunction cell is realized by adjusting process parameters in the preparation process, so that the film layer has excellent optical performance and electrical performance, and the conductivity of the amorphous silicon layer of the light receiving surface is improved while the parasitic absorption of the amorphous silicon of the light receiving surface of the HJT cell is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a high-efficiency crystalline silicon/amorphous silicon heterojunction solar cell structure in embodiment 1 of the present invention;
fig. 2 is a schematic structural diagram of a high-efficiency crystalline silicon/amorphous silicon heterojunction solar cell structure in embodiment 2 of the present invention;
fig. 3 is a schematic structural diagram of a high-efficiency crystalline silicon/amorphous silicon heterojunction solar cell structure in embodiment 3 of the present invention;
fig. 4 is a schematic structural diagram of a high-efficiency crystalline silicon/amorphous silicon heterojunction solar cell structure in embodiment 4 of the present invention.
Wherein in the figure:
1. an electrode; 2. a first TCO layer; 3. doping the amorphous silicon layer A; 4. a first intrinsic amorphous silicon layer; 5. a silicon substrate layer; 6. a second intrinsic amorphous silicon layer; 7. a light receiving surface doping layer; 701. doping the amorphous silicon layer B; 702. doping the microcrystalline silicon layer; 8. and a second TCO layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1-4, the high-efficiency crystalline silicon/amorphous silicon heterojunction solar cell of the invention comprises a silicon layer substrate 5, an intrinsic amorphous silicon layer one 6 arranged on the front surface of the silicon layer substrate 5, and an intrinsic amorphous silicon layer two 4 arranged on the back surface of the silicon layer substrate 5; the back surface of the intrinsic amorphous silicon layer II 4 is sequentially provided with a doped amorphous silicon layer A3 and a TCO layer I2, the front surface of the intrinsic amorphous silicon layer I6 is provided with a light receiving surface doped layer 7, the TCO layer II 8 is arranged on the front surface of the light receiving surface doped layer 7, and the light receiving surface doped layer 7 comprises the following structures: one doped microcrystalline silicon layer 702 (fig. 4), or the outer surface of the intrinsic amorphous silicon layer one 6 is a doped amorphous silicon layer B701 or a doped microcrystalline silicon layer 702, and the inner surface of the TCO layer two 8 is a doped microcrystalline silicon layer 702 or a doped amorphous silicon layer B701 (fig. 1 and 3); or the light-receiving-surface doping layer 7 includes two doped amorphous silicon layers B701 and one doped microcrystalline silicon layer 702, and the doped microcrystalline silicon layer 702 is disposed between the doped amorphous silicon layers B701 (fig. 2).
Examples 1 to 5
Table 1 examples 1-5 p-type amorphous/microcrystalline silicon layer structure data
Examples 1-5 were prepared as follows, including the following steps:
(1) preparation of a silicon layer substrate: carrying out texturing treatment on an N-type monocrystalline silicon wafer with the thickness of 160 mu m to form a pyramid textured surface, removing impurity ions, and cleaning the surface to obtain a silicon layer substrate;
(2) preparing an intrinsic amorphous silicon layer: preparing a first intrinsic amorphous silicon layer on the front side of the silicon layer substrate through vapor deposition, and preparing a second intrinsic amorphous silicon layer on the back side of the silicon layer substrate, wherein the thicknesses of the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer are both 5 nm;
(3) preparation of an optimal layer of the light receiving surface and an amorphous silicon layer: preparing an n-type amorphous silicon/microcrystalline silicon light-receiving surface doping layer on the front surface of the first intrinsic amorphous silicon layer through vapor deposition; preparing an n-type amorphous silicon layer with the thickness of 10nm on the back of the intrinsic amorphous silicon layer II;
(4) preparing TCO layer: depositing a TCO layer II on the front surface of the light-receiving surface doping layer by a magnetron sputtering method, and depositing a TCO layer I on the back surface of the n-type amorphous silicon layer, wherein the thickness of each TCO layer is 100 nm;
(5) the TCO layer II and the TCO layer I are formed into silver metal electrodes on the front side and the back side through screen printing, the width of a main grid is 1mm, the number of the main grids is 5, the width of a silver auxiliary grid line is 60 mu m, and the number of lines is 100;
(6) sintering the structure formed in the step (5) to form good ohmic contact between metal and silicon, and thus obtaining the high-efficiency crystalline silicon/amorphous silicon heterojunction solar cell;
(7) and (4) carrying out electrical property test on the high-efficiency crystalline silicon/amorphous silicon heterojunction solar cell obtained in the step (6).
Examples 1-5 crystalline silicon/amorphous silicon heterojunction solar cell the electrical performance results of the test cells are shown in table 1.
Table 2 solar cell test cell electrical performance results
| Electrical Properties | Eta(％) | Voc(mV) | Isc(mA/cm2) | FF(％) |
| Example 1 | 0.08 | 0 | 0.2 | -0.1 |
| Example 2 | 0.11 | 0 | 0.1 | 0.15 |
| Example 3 | 0.15 | 0 | 0.2 | 0.1 |
| Example 4 | 0.11 | 0 | 0.3 | -0.2 |
| Comparative example | 0 | 0 | 0 | 0 |
The electrical properties of the HJT cell prepared by the above method are shown in table 2, and it can be seen that the efficiency is improved by 0.08% -0.15% (abs), which mainly represents the improvement of current, which mainly benefits from the high transmittance brought by the smaller refractive index of the light-receiving surface doped microcrystalline silicon layer, and the band gap matching of the doped amorphous silicon layer and the intrinsic amorphous silicon layer; the fill enhancement is mainly due to the high conductivity of the doped amorphous silicon layer on the back of the TOC layer of the light receiving surface due to the large refractive index. Therefore, the optimized layer of the light receiving surface doped amorphous silicon/microcrystalline silicon doped structure is realized by adjusting the process parameters, so that the film layer of the optimized layer has excellent optical performance and electrical performance.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. A high efficiency crystalline/amorphous silicon heterojunction solar cell, comprising: the silicon substrate, the intrinsic amorphous silicon layer I arranged on the front side of the silicon substrate and the intrinsic amorphous silicon layer II arranged on the back side of the silicon substrate; the back of the second intrinsic amorphous silicon layer is sequentially provided with a doped amorphous silicon layer A and a TCO layer I, and the back of the second intrinsic amorphous silicon layer is characterized by further comprising: the light receiving surface doping layer is arranged on the front surface of the intrinsic amorphous silicon layer I, and the TCO layer II is arranged on the front surface of the light receiving surface doping layer;
the light receiving surface doping layer at least comprises a doping microcrystalline silicon layer.
2. The solar cell as claimed in claim 1, wherein the light-receiving surface doping layer structure comprises a doped microcrystalline silicon layer; or the front surface of the doped microcrystalline silicon layer is provided with a doped amorphous silicon layer B; or a doped amorphous silicon layer B is arranged on the back of the doped microcrystalline silicon layer; or the front surface and the back surface of the doped microcrystalline silicon layer are respectively provided with a doped amorphous silicon layer B.
3. A high efficiency crystalline silicon/amorphous silicon heterojunction solar cell as in claim 2, wherein the refractive index of the doped microcrystalline silicon layer is 3.3-3.8, and the refractive index of the doped amorphous silicon layer is 3.8-4.3.
4. The efficient crystalline silicon/amorphous silicon heterojunction solar cell as claimed in claim 2, wherein the thickness of the doped layer on the light receiving surface is 3-10nm, the thickness of the doped amorphous silicon layer B is 0-9nm, and the thickness of the doped microcrystalline silicon layer is 1-10 nm.
5. The efficient crystalline silicon/amorphous silicon heterojunction solar cell as claimed in claim 1, wherein the thicknesses of the intrinsic amorphous silicon layer I and the intrinsic amorphous silicon layer II are both 3-10nm, the thickness of the doped amorphous silicon layer A is 3-20nm, and the thicknesses of the TOC layer I and the TOC layer II are both 70-120 nm.
6. The method for preparing a high-efficiency crystalline silicon/amorphous silicon heterojunction solar cell as claimed in any one of claims 1 to 5, comprising the following steps:
(1) preparation of a silicon layer substrate: texturing an N-type monocrystalline silicon wafer with the thickness of 160-;
(2) preparing an intrinsic amorphous silicon layer: preparing a first intrinsic amorphous silicon layer on the front side of the silicon layer substrate through vapor deposition, and preparing a second intrinsic amorphous silicon layer on the back side of the silicon layer substrate;
(3) preparing a light receiving surface doping layer and an amorphous silicon layer: preparing an n-type amorphous silicon/microcrystalline silicon light-receiving surface doped layer on the front surface of the first intrinsic amorphous silicon layer through vapor deposition, and preparing an n-type amorphous silicon layer on the back surface of the second intrinsic amorphous silicon layer;
(4) preparing TCO layer: depositing a TCO layer II on the front side of the light-receiving surface doping layer by a magnetron sputtering method, and depositing a TCO layer I on the back side of the n-type amorphous silicon layer;
(5) the TCO layer II and the TCO layer I are formed into silver metal electrodes on the front side and the back side through screen printing, the width of a main grid is 1-3mm, the number of the main grids is 2-5, the width of a silver auxiliary grid line is 50-70 mu m, and the number of lines is 90-110;
(6) sintering the structure formed in the step (5) to form good ohmic contact between metal and silicon, and thus obtaining the high-efficiency crystalline silicon/amorphous silicon heterojunction solar cell;
(7) and (4) carrying out electrical property test on the high-efficiency crystalline silicon/amorphous silicon heterojunction solar cell obtained in the step (6).
7. The method as claimed in claim 6, wherein the doped layer on the light-receiving surface in step (3) is formed by reacting silane, hydrogen and doping gas in the same reaction chamber.
8. The method as claimed in claim 6, wherein the doping of amorphous silicon and the doping of microcrystalline silicon in the doped layer on the light-receiving surface in step (3) are achieved by adjusting the hydrogen ratio in the reaction gas, and the light transmittance and the conductivity of the doped amorphous silicon and the doped microcrystalline silicon are achieved by adjusting the parameters of gas flow, pressure and power.
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