CN203218277U

CN203218277U - HIT solar cell

Info

Publication number: CN203218277U
Application number: CN2012206111748U
Authority: CN
Inventors: 罗云荣; 羊亿
Original assignee: Hunan Normal University
Current assignee: Hunan Normal University
Priority date: 2012-11-19
Filing date: 2012-11-19
Publication date: 2013-09-25
Anticipated expiration: 2022-11-19

Abstract

The utility model discloses an HIT solar cell which is characterized in that: intrinsic amorphous silicon films (i alpha-si) are respectively deposited on two surfaces of a p-type substrate crystal silicon wafer (p c-si); a n-type hydrogenated nanometer crystal silicon film (n nc-si:H) is deposited on the front-surface intrinsic amorphous silicon fils (i alpha-si); a p-type heavily doped hydrogenated nanometer crystal silicon film (p+nc-si:H) is deposited on the back-surface intrinsic amorphous silicon fils (i alpha-si); fluorine-doped tin oxide transparent conductive films (FTO) are respectively deposited on both surfaces; a front-surface metal electrode and a back-surface metal electrode are printed on a screen; and metal is sintered for metalizing the electrodes. The HIT solar cell has the following advantages: high open-circuit voltage, high filling factor, high conversion efficiency and high stability.

Description

A kind of HIT solar cell

Technical field

The utility model relates to a kind of structure of HIT solar cell.

Background technology

HIT (heterojunction with intrinsic thin-layer) heterojunction thin intrinsic film solar cell is at crystalline silicon substrates deposition one deck intrinsic amorphous silicon film, dopant deposition hydrogenation non crystal silicon film on the intrinsic amorphous silicon film then, owing to low, the factors such as carrier mobility is low, poor stability of hydrogenation non crystal silicon film conductivity, influenced the conversion efficiency of solar cell.The purpose of this utility model is in order to improve the conversion efficiency of HIT solar cell.

Summary of the invention

For solving the problem of aforementioned raising HIT solar cell conversion efficiency, the utility model provides a kind of HIT solar cell, it is characterized in that, deposition intrinsic amorphous silicon membrane (the i α-si) respectively on the two sides of p-type substrate crystal silicon chip (p c-si), (deposition of i α-si) n type hydrogenation Nano silicon-crystal thin film (n nc-si:H), (i α-si) goes up deposition p-type heavy doping hydrogenation Nano silicon-crystal thin film (p to the intrinsic amorphous silicon film overleaf at front intrinsic amorphous silicon film ⁺Nc-si:H), deposit fluorine doped tin oxide transparent conductive film (FTO) then respectively on the two sides, silk screen printing front, back metal electrode, sintering metal makes electrode metalization.

The utility model has the advantages that with the hydrogenation Nano silicon-crystal thin film and replace hydrogenation non crystal silicon film, because the hydrogenation Nano silicon-crystal thin film is made up of the nanocrystalline silicon that is embedded in amorphous silicon hydride, compare with hydrogenation non crystal silicon film, the hydrogenation Nano silicon-crystal thin film has high conductivity, highly doped efficient, high mobility and low key properties such as the absorption coefficient of light, and the hydrogenation Nano silicon-crystal thin film (nc-Si:H) that mixes can reduce the series resistance of emitter, improve fill factor, curve factor and open circuit voltage, thereby improve the conversion efficiency of solar cell.

Description of drawings

Accompanying drawing 1 is layer structural representation of the present utility model.

Accompanying drawing 1 label declaration:

1--is Al metal grid lines negative electrode;

2--is front fluorine doped tin oxide transparent conductive film (FTO);

3--is n type hydrogenation Nano silicon-crystal thin film (n nc-si:H);

4--is positive intrinsic amorphous silicon film (i α-si);

5--is p-type basalis crystal silicon chip (p c-si);

6--is intrinsic amorphous silicon film (the i α-si) at the back side;

7--is p-type heavy doping hydrogenation Nano silicon-crystal thin film (p ⁺Nc-si:H);

8--is the fluorine doped tin oxide transparent conductive film (FTO) at the back side;

9--is the Al metal grid lines positive electrode at the back side.

Embodiment

The utility model is pressed accompanying drawing 1 each layer structure, and it comprises from bottom to up intrinsic amorphous silicon film 4, n type hydrogenation Nano silicon-crystal thin film 3, front fluorine doped tin oxide transparent conductive film 2, the Al metal grid lines negative electrode 1 in the intrinsic amorphous silicon film 6 at the fluorine doped tin oxide transparent conductive film 8 at the Al metal grid lines positive electrode 9 of distribution, the back side, p-type heavy doping hydrogenation Nano silicon-crystal thin film 7, the back side, p-type basalis crystal silicon chip 5, front successively.In the present embodiment, the intrinsic amorphous silicon film of deposition front and back all adopts a kind of in solid phase crystallization method, chemical vapour deposition technique or the physical vaporous deposition, and thickness is 2-20nm; The equal using plasma of deposition n type hydrogenation Nano silicon-crystal thin film and p-type heavy doping hydrogenation Nano silicon-crystal thin film strengthens chemical vapour deposition technique (PECVD), and thickness is 2-20nm; The fluorine doped tin oxide transparent conductive film of deposition front and back all adopts a kind of in supersonic spraying, the magnetron sputtering method, and thickness is 50-200nm; The metal grid lines electrode of front and back adopts the silk-screen printing technique symmetry to print, low-temperature sintering, and temperature is controlled below 300 ℃.

Above-described only is preferred implementation of the present utility model; should be pointed out that for a person skilled in the art, under the prerequisite that does not break away from the utility model creation design; can also make some distortion and improvement, these all belong to protection range of the present utility model.

Claims

1. HIT solar cell, it is characterized in that, at the two sides of p-type substrate crystal silicon chip difference deposition intrinsic amorphous silicon membrane, at front intrinsic amorphous silicon film deposition n type hydrogenation Nano silicon-crystal thin film, deposit p-type heavy doping hydrogenation Nano silicon-crystal thin film overleaf on the intrinsic amorphous silicon film.