CN114093963A - Silicon-based heterojunction solar cell structure and preparation method thereof - Google Patents
Silicon-based heterojunction solar cell structure and preparation method thereof Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 18
- 239000010703 silicon Substances 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 62
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims description 30
- 238000000151 deposition Methods 0.000 claims description 20
- 239000011521 glass Substances 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000003631 wet chemical etching Methods 0.000 claims description 3
- 239000000969 carrier Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 238000000926 separation method Methods 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
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Abstract
The invention relates to a silicon-based heterojunction solar cell structure and a preparation method thereof, and the silicon-based heterojunction solar cell structure comprises an N-type monocrystalline silicon substrate, wherein the front surface of the N-type monocrystalline silicon substrate is provided with a N + doping layer, a first intrinsic amorphous silicon/microcrystalline silicon film is deposited on the surface of the N + doping layer, at least two layers of N-type amorphous silicon/microcrystalline silicon films are deposited on the surface of the first intrinsic amorphous silicon/microcrystalline silicon film, and a first conducting film is deposited on the surface of the outermost N-type amorphous silicon/microcrystalline silicon film; the back of the N-type single crystal silicon substrate is provided with a layer of second intrinsic amorphous silicon/microcrystalline silicon film, at least two layers of p-type amorphous silicon/microcrystalline silicon films are deposited on the surface of the second intrinsic amorphous silicon/microcrystalline silicon film, and a layer of second conductive film is deposited on the surface of the outermost amorphous silicon/microcrystalline silicon film. According to the invention, an N + doped layer is formed on the main surface of the N-type single crystal silicon substrate to form a high-low junction, so that a certain separation effect on photo-generated carriers is achieved, and the recombination of the photo-generated carriers is reduced.
Description
Technical Field
The invention relates to the technical field of photovoltaic high-efficiency batteries, in particular to a silicon-based heterojunction solar cell structure and a preparation method thereof.
Background
The silicon-based heterojunction solar cell is based on higher photoelectric conversion efficiency, and is recognized as the next generation of photovoltaic cell technology capable of realizing large-scale mass production by the photovoltaic industry. The silicon-based heterojunction solar cell structure comprises an n-type monocrystalline silicon substrate, an amorphous silicon/crystalline silicon film, a transparent conductive film, a metal electrode and the like. The conventional preparation steps comprise: preparing and cleaning a suede, depositing an amorphous silicon/microcrystalline silicon film, depositing a transparent conductive film, and preparing a metal electrode by electroplating or screen printing. In a conventional process concept, for example, chinese patent CN107004732A discloses a solar cell and a solar cell module, in which a n-type crystal semiconductor substrate has a resistivity in a range of 3.5 to 13 Ω cm to reduce deviation of output characteristics in the solar cell; for another example, chinese patent CN113488550A discloses a heterojunction cell and a method for manufacturing the heterojunction cell, where the prepared heterojunction cell texture faces the light source, so as to reduce light reflection, improve photon utilization rate, increase cell current, and improve power generation efficiency. In the prior art, a cell structure for further improving the photoelectric efficiency of the heterojunction solar cell from the perspective of a monocrystalline silicon wafer substrate does not exist, the process is complex, and the parameter reached is theoretical and is not practical.
Disclosure of Invention
The invention aims to overcome the defects and provides a silicon-based heterojunction solar cell structure and a preparation method thereof, so that the quality of a monocrystalline silicon substrate is further improved, the surface structure is improved, and the photoelectric conversion efficiency of the heterojunction solar cell is improved.
The purpose of the invention is realized as follows:
a silicon-based heterojunction solar cell structure comprises an N-type monocrystalline silicon substrate, wherein a N + doping layer is arranged on the front surface of the N-type monocrystalline silicon substrate, a first intrinsic amorphous silicon/microcrystalline silicon film is deposited on the surface of the N + doping layer, at least two layers of N-type amorphous silicon/microcrystalline silicon films are deposited on the surface of the first intrinsic amorphous silicon/microcrystalline silicon film, and a first conducting film is deposited on the surface of the outermost N-type amorphous silicon/microcrystalline silicon film; a layer of second intrinsic amorphous silicon/microcrystalline silicon film is arranged on the back of the N-type single crystal silicon substrate, at least two layers of p-type amorphous silicon/microcrystalline silicon films are deposited on the surface of the second intrinsic amorphous silicon/microcrystalline silicon film, and a layer of second conductive film is deposited on the surface of the outermost layer of p-type amorphous silicon/microcrystalline silicon film; and a plurality of metal electrodes are arranged on the outer surfaces of the first conductive film and the second conductive film.
A preparation method of a silicon-based heterojunction solar cell structure comprises the following steps:
preparing a pyramid textured structure on the surface of an N-type single crystal silicon substrate to obtain a double-textured N-type single crystal silicon substrate;
secondly, carrying out phosphorus doping on the double-textured N-type single crystal silicon substrate, and forming an N + doped layer and a phosphorosilicate glass layer on the front side and the back side of the N-type single crystal silicon substrate;
removing the phosphorosilicate glass layer on the back surface of the N-type monocrystalline silicon substrate, removing the N + doped layer on the back surface of the N-type monocrystalline silicon substrate and the phosphorosilicate glass layer on the front surface of the N-type monocrystalline silicon substrate, and reserving a layer of N + doped layer on the front surface of the N-type monocrystalline silicon substrate;
depositing a first intrinsic amorphous silicon/microcrystalline silicon film on the N + doped layer on the front surface of the N-type monocrystalline silicon substrate by a plasma chemical vapor deposition method, depositing two or more layers of N-type amorphous silicon/microcrystalline silicon films on the surface of the first intrinsic amorphous silicon/microcrystalline silicon film, and depositing a first conductive film on the surface of the N-type amorphous silicon/microcrystalline silicon film;
depositing a second intrinsic amorphous silicon/microcrystalline silicon film on the back surface of the N-type single crystal silicon substrate by a plasma chemical vapor deposition method, depositing two or more layers of p-type amorphous silicon/microcrystalline silicon films on the surface of the second intrinsic amorphous silicon/microcrystalline silicon film, and depositing a second conductive film on the surface of the p-type amorphous silicon/microcrystalline silicon film;
and step six, preparing the metal electrode.
Further, the process temperature of phosphorus doping in the second step is 600-850 ℃.
And further, in the third step, chain wet process equipment is adopted, and the phosphorosilicate glass layer on the back surface of the N-type monocrystalline silicon substrate is removed by using an acid solution.
And further, in the third step, the N + doped layer on the back surface of the N-type monocrystalline silicon substrate and the phosphorosilicate glass layer on the front surface are removed by using a groove type wet chemical etching method.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, an n + doped layer is formed on the main surface of the n-type single crystal silicon substrate to form a high-low junction, so that a certain separation effect on photo-generated carriers is achieved, and the recombination of the photo-generated carriers is reduced;
the phosphorus doping process can play a good gettering role on the monocrystalline silicon substrate, and reduces the influence of impurities on the monocrystalline silicon substrate, so that the photoelectric conversion efficiency of the heterojunction solar cell is improved.
Drawings
Fig. 1 is a schematic structural diagram of a silicon-based heterojunction solar cell of the present invention.
Wherein:
the solar cell comprises an N-type monocrystalline silicon substrate 1, an N + doped layer 2, a first intrinsic amorphous silicon/microcrystalline silicon film 3, an N-type amorphous silicon/microcrystalline silicon film 4, a first conductive film 5, a second intrinsic amorphous silicon/microcrystalline silicon film 6, a p-type amorphous silicon/microcrystalline silicon film 7, a second conductive film 8 and a metal electrode 9.
Detailed Description
Example 1:
referring to fig. 1, the silicon-based heterojunction solar cell structure comprises an N-type monocrystalline silicon substrate 1, wherein a N + doping layer 2 is arranged on the front surface of the N-type monocrystalline silicon substrate 1, a first intrinsic amorphous silicon/microcrystalline silicon film 3 is deposited on the surface of the N + doping layer 2, at least two N-type amorphous silicon/microcrystalline silicon films 4 are deposited on the surface of the first intrinsic amorphous silicon/microcrystalline silicon film 3, and a first conductive film 5 is deposited on the surface of the outermost N-type amorphous silicon/microcrystalline silicon film 4;
the back of the N-type single crystal silicon substrate 1 is provided with a second intrinsic amorphous silicon/microcrystalline silicon film 6, at least two p-type amorphous silicon/microcrystalline silicon films 7 are deposited on the surface of the second intrinsic amorphous silicon/microcrystalline silicon film 6, and a second conductive film 8 is deposited on the surface of the outermost p-type amorphous silicon/microcrystalline silicon film 7.
And a plurality of metal electrodes 9 are arranged on the outer surfaces of the first conductive film 5 and the second conductive film 8.
The invention relates to a preparation method of a silicon-based heterojunction solar cell structure, which comprises the following steps:
preparing a pyramid textured structure on the surface of an N-type single crystal silicon substrate by adopting a wet chemical etching method to obtain a double-textured N-type single crystal silicon substrate 1;
secondly, carrying out phosphorus doping on the double-suede N-type monocrystalline silicon substrate 1 by using a high-temperature tubular diffusion furnace, wherein an N + doping layer and a phosphorosilicate glass layer are formed on the front side and the back side of the N-type monocrystalline silicon substrate 1 within the range of 600-850 ℃;
removing the phosphorosilicate glass layer on the back surface of the N-type monocrystalline silicon substrate 1 by using an acid solution by adopting chain wet method equipment, removing the N + doped layer on the back surface of the N-type monocrystalline silicon substrate 1 and the phosphorosilicate glass layer on the front surface by using a groove type wet method chemical corrosion method, and reserving a layer of N + doped layer 2 on the front surface of the N-type monocrystalline silicon substrate 1;
depositing a first intrinsic amorphous silicon/microcrystalline silicon film 3 on the N + doped layer 2 on the front surface of the N-type monocrystalline silicon substrate 1 by a plasma chemical vapor deposition method, depositing two or more layers of N-type amorphous silicon/microcrystalline silicon films 4 on the surface of the first intrinsic amorphous silicon/microcrystalline silicon film 3, and depositing a first conductive film 5 on the surface of the N-type amorphous silicon/microcrystalline silicon film 4 by magnetron sputtering or other physical vapor deposition methods;
depositing a second intrinsic amorphous silicon/microcrystalline silicon film 6 on the back surface of the N-type single crystal silicon substrate 1 by a plasma chemical vapor deposition method, depositing two or more layers of p-type amorphous silicon/microcrystalline silicon films 7 on the surface of the second intrinsic amorphous silicon/microcrystalline silicon film 6, and depositing a second conductive film 8 on the surface of the p-type amorphous silicon/microcrystalline silicon film 7 by magnetron sputtering or other physical vapor deposition methods;
and step six, preparing the metal electrodes 9 on the front surface and the back surface respectively by adopting a screen printing or electroplating process.
In conclusion, the main surface of the n-type monocrystalline silicon substrate of the silicon-based heterojunction solar cell is the n + doped layer, high and low junctions can be formed on the main surface, a certain separation effect on photo-generated carriers is achieved, the compounding of the photo-generated carriers is reduced, meanwhile, the high-temperature phosphorus doping process can achieve a good gettering effect on the monocrystalline silicon substrate, the influence of impurities on the monocrystalline silicon substrate is reduced, and the photoelectric conversion efficiency of the silicon-based heterojunction solar cell can be improved by over 0.1%.
The above is only a specific application example of the present invention, and the protection scope of the present invention is not limited in any way. All the technical solutions formed by equivalent transformation or equivalent replacement fall within the protection scope of the present invention.
Claims (6)
1. A silicon-based heterojunction solar cell structure, characterized in that: the N-type single crystal silicon substrate comprises an N-type single crystal silicon substrate (1), wherein a N + doping layer (2) is arranged on the front surface of the N-type single crystal silicon substrate (1), a first intrinsic amorphous silicon/microcrystalline silicon film (3) is deposited on the surface of the N + doping layer (2), at least two N-type amorphous silicon/microcrystalline silicon films (4) are deposited on the surface of the first intrinsic amorphous silicon/microcrystalline silicon film (3), and a first conductive film (5) is deposited on the surface of the outermost N-type amorphous silicon/microcrystalline silicon film (4); the back of the N-type single crystal silicon substrate (1) is provided with a second intrinsic amorphous silicon/microcrystalline silicon film (6), at least two p-type amorphous silicon/microcrystalline silicon films (7) are deposited on the surface of the second intrinsic amorphous silicon/microcrystalline silicon film (6), and a second conductive film (8) is deposited on the surface of the outermost p-type amorphous silicon/microcrystalline silicon film (7).
2. The silicon-based heterojunction solar cell structure of claim 1, wherein: and a plurality of metal electrodes (9) are arranged on the outer surfaces of the first conductive film (5) and the second conductive film (8).
3. A method of fabricating the silicon-based heterojunction solar cell structure of claim 1, comprising:
step one, preparing a pyramid suede structure on the surface of an N-type single crystal silicon substrate to obtain a double-suede N-type single crystal silicon substrate (1);
secondly, carrying out phosphorus doping on the double-textured N-type single crystal silicon substrate (1), and forming an N + doped layer and a phosphorosilicate glass layer on the front side and the back side of the N-type single crystal silicon substrate (1);
removing the phosphorosilicate glass layer on the back surface of the N-type monocrystalline silicon substrate 1, removing the N + doped layer on the back surface of the N-type monocrystalline silicon substrate (1) and the phosphorosilicate glass layer on the front surface, and reserving a N + doped layer (2) on the front surface of the N-type monocrystalline silicon substrate (1);
depositing a first intrinsic amorphous silicon/microcrystalline silicon film (3) on the N + doped layer (2) on the front surface of the N-type single crystal silicon substrate (1) by a plasma chemical vapor deposition method, depositing two or more layers of N-type amorphous silicon/microcrystalline silicon films (4) on the surface of the first intrinsic amorphous silicon/microcrystalline silicon film (3), and depositing a first conductive film (5) on the surface of the N-type amorphous silicon/microcrystalline silicon film (4);
depositing a second intrinsic amorphous silicon/microcrystalline silicon film (6) on the back surface of the N-type single crystal silicon substrate (1) by a plasma chemical vapor deposition method, depositing two or more layers of p-type amorphous silicon/microcrystalline silicon films (7) on the surface of the second intrinsic amorphous silicon/microcrystalline silicon film (6), and depositing a second conductive film (8) on the surface of the p-type amorphous silicon/microcrystalline silicon film (7);
and step six, preparing a metal electrode (9).
4. The method of claim 3, wherein the method comprises: and the process temperature of phosphorus doping in the second step is 600-850 ℃.
5. The method of claim 3, wherein the method comprises: and in the third step, chain type wet method equipment is adopted, and the phosphorosilicate glass layer on the back surface of the N-type monocrystalline silicon substrate (1) is removed by using an acid solution.
6. The method of claim 3, wherein the method comprises: and in the third step, removing the N + doped layer on the back surface and the phosphorosilicate glass layer on the front surface of the N-type monocrystalline silicon substrate (1) by using a groove type wet chemical etching method.
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| WO2016182128A1 (en) * | 2015-05-12 | 2016-11-17 | 주식회사 테스 | Method for manufacturing solar cell module |
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| CN108172658A (en) * | 2018-01-23 | 2018-06-15 | 国家电投集团西安太阳能电力有限公司 | A kind of preparation method of N-type hetero-junctions double-sided solar battery |
| CN207967020U (en) * | 2018-01-23 | 2018-10-12 | 国家电投集团西安太阳能电力有限公司 | N-type heterojunction double-sided solar cell structure |
| CN111063757A (en) * | 2019-11-29 | 2020-04-24 | 晋能光伏技术有限责任公司 | Efficient crystalline silicon/amorphous silicon heterojunction solar cell and preparation method thereof |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016182128A1 (en) * | 2015-05-12 | 2016-11-17 | 주식회사 테스 | Method for manufacturing solar cell module |
| CN205985014U (en) * | 2016-08-24 | 2017-02-22 | 常州天合光能有限公司 | Passivation projecting pole solar battery with stromatolite heterostructure |
| CN108172658A (en) * | 2018-01-23 | 2018-06-15 | 国家电投集团西安太阳能电力有限公司 | A kind of preparation method of N-type hetero-junctions double-sided solar battery |
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