CN115117182A - High-efficiency heterojunction solar cell and manufacturing method thereof - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims abstract description 54
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 47
- 238000000151 deposition Methods 0.000 claims abstract description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- 229910052796 boron Inorganic materials 0.000 claims abstract description 22
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000002425 crystallisation Methods 0.000 claims abstract description 13
- 230000008025 crystallization Effects 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 20
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 16
- 239000012495 reaction gas Substances 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
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Abstract
The invention discloses a high-efficiency heterojunction solar cell and a manufacturing method thereof, wherein the cell comprises: the N-type silicon wafer comprises a first intrinsic amorphous silicon layer, an N-type amorphous silicon layer, a transparent conducting layer and a metal grid line layer which are sequentially arranged on the front side of the silicon wafer, and a second intrinsic amorphous silicon layer, a P-type microcrystalline silicon layer, a transparent conducting layer and a metal grid line layer which are sequentially arranged on the back side of the silicon wafer. Wherein the P-type microcrystalline silicon layer is formed by sequentially depositing through a gradient of boron doping gas concentration from low to high. The low doping concentration adopted in the initial film forming stage of the P-type microcrystalline silicon layer is beneficial to the growth of a microcrystalline silicon film so as to improve the crystallization rate of the P-type microcrystalline silicon; the doping concentration is gradually increased from low to ensure the passivation performance of the film and form certain energy band gradient so as to accelerate the transmission of holes, and the conversion efficiency of the battery is obviously improved.
Description
Technical Field
The invention relates to the field of crystalline silicon solar cells, in particular to a high-efficiency heterojunction solar cell and a manufacturing method thereof.
Background
The solar photovoltaic power generation technology is a major trend in the future to create clean renewable energy for human beings, and solar photovoltaic products keep high demand in the future for a period of time. The heterojunction solar cell is simple in preparation process steps and low in process temperature, the product has the advantages of high power generation amount, high stability, no attenuation and low cost, the cost performance advantage of the heterojunction solar cell is shown along with continuous technical progress and policy promotion of the industry, and the heterojunction solar cell is likely to replace a crystalline silicon solar cell to become a next-generation mainstream photovoltaic cell.
The traditional heterojunction solar cell takes an N-type monocrystalline silicon wafer as a substrate, an intrinsic I-layer amorphous silicon passivates the surface of the crystalline silicon, a boron-doped P-type amorphous silicon film is taken as an emitting layer, and a phosphorus-doped N-type amorphous silicon film forms a back surface field; the method is used as a core process technology and is crucial to the efficiency of the heterojunction solar cell; compared with a P-type amorphous silicon film, the P-type microcrystalline silicon film has the advantages of higher doping efficiency, high conductivity, low light absorption and the like, and is hopeful to further improve the efficiency of the cell when applied to a heterojunction solar cell. The performance of the emitting layer largely determines the performance of the solar cell, and for a heterojunction solar cell to obtain a high-efficiency cell, the emitting region needs to be heavily doped to obtain a high built-in electric field; however, monotonically increasing the doping concentration increases the defect density of the thin film, and too high a formed barrier height hinders the transport of carriers, so that the filling factor of the battery is reduced; and for the preparation of the P-type microcrystalline silicon film, the too high boron doping concentration can inhibit the crystallization of the film, thereby causing difficulty in forming the microcrystalline silicon film with high crystallization rate.
Disclosure of Invention
Aiming at the problems, the invention provides a high-efficiency heterojunction solar cell and a manufacturing method thereof, wherein a P-type microcrystalline silicon layer is deposited by controlling a proper doping process and a crystallization rate, so that the Isc, Voc and FF of the cell are improved in the application of the heterojunction solar cell, and the final conversion efficiency of the cell is improved.
In order to solve the above technical problem, the present invention provides a high efficiency heterojunction solar cell, which comprises: the N-type silicon wafer is sequentially arranged on a first intrinsic amorphous silicon layer, an N-type amorphous silicon layer, a transparent conducting layer and a metal grid line layer on the front surface of the silicon wafer. And the second intrinsic amorphous silicon layer, the P-type microcrystalline silicon layer, the transparent conducting layer and the metal grid line layer are sequentially arranged on the back of the silicon wafer. The P-type microcrystalline silicon layer is formed by sequentially depositing through a gradient of boron doping gas concentration from low to high.
Further, the thickness of the P-type microcrystalline silicon layer is
(ii) a The crystallization rate of the P-type microcrystalline silicon layer is 50-70%;
the invention also provides a manufacturing method of the high-efficiency heterojunction solar cell, which comprises the following steps:
providing an N-type silicon wafer which is subjected to texturing and cleaning;
depositing a second intrinsic amorphous silicon layer on the back of the silicon wafer by PECVD,
depositing a first intrinsic amorphous silicon layer on the front surface of the silicon wafer through PECVD;
depositing a phosphorus-doped N-type amorphous silicon layer on the second intrinsic amorphous silicon layer on the front surface of the silicon wafer through PECVD;
depositing a boron-doped P-type microcrystalline silicon layer on the first intrinsic amorphous silicon layer on the back surface of the silicon wafer through PECVD;
respectively depositing transparent conducting layers on the front N-type amorphous silicon layer and the back P-type microcrystalline silicon layer of the silicon wafer through PVD magnetron sputtering;
respectively manufacturing metal grid line electrodes on the transparent conductive layers on the front side and the back side of the silicon wafer;
further, the boron doping gas for depositing the P-type microcrystalline silicon layer is one or the mixture of diborane and TMB;
further, the concentration gradient of the boron doping gas is increased linearly, or is increased slowly and then quickly, or is increased quickly and then slowly;
further, the concentration gradient range of the boron doping gas for depositing the P-type microcrystalline silicon layer is 0-10%;
further, the pressure of the reaction gas for depositing the P-type microcrystalline silicon layer is 150-400Pa, and the dilution ratio of hydrogen in the reaction gas is more than 95 percent;
further, the deposition power density for depositing the P-type microcrystalline silicon layer is 0.03-0.15W/cm 2 ；
Further, the preset film forming temperature of PECVD is 150-250 ℃;
furthermore, the P-type microcrystalline layer and the method for sequentially depositing and forming the P-type microcrystalline layer through the gradient of the concentration of the gradually-changed boron doping gas from low to high are also suitable for a back contact heterojunction solar cell (HBC), and can be used for replacing a P-type amorphous silicon layer of the existing HBC and a preparation process thereof.
The invention has the beneficial effects that:
(1) the P-type microcrystalline silicon film adopts a low boron-doped concentration in the initial film forming stage, so that the growth of microcrystalline silicon is facilitated, the crystallization of the film is promoted, uniform microcrystalline silicon grains are formed, the surface of the film is relatively flat, and the relatively high crystallization rate and the relatively low void ratio are kept; the formed film has high crystallization rate, which is beneficial to improving the short circuit current Isc of the battery;
(2) the concentration gradient of the boron doping gas is gradually changed from low to high, and a potential barrier formed by the boron doping gas is used for inhibiting the recombination of carriers at an interface without hindering the transport of holes; the passivation performance of the film is ensured, certain energy band gradient is formed to accelerate the transmission of holes, and the open-circuit voltage Voc and the fill factor FF of the battery are improved;
(3) the doping concentration of the P-type microcrystalline silicon film is gradually increased, and the conductivity is increased, so that the P-type microcrystalline silicon film is favorable for keeping good electric contact with a subsequent TCO film, the series resistance is reduced, and the FF is improved.
In summary, the high-efficiency heterojunction solar cell and the manufacturing method thereof provided by the invention adopt the P-type microcrystalline silicon layer to replace the P-type amorphous silicon layer in the prior art, and the P-type microcrystalline silicon layer is formed by sequentially depositing the gradually-changed boron doping gas concentration gradient from low to high, i.e. the low doping concentration adopted in the initial film forming stage is beneficial to the growth of a microcrystalline silicon film, thereby being beneficial to improving the crystallization rate of the P-type microcrystalline silicon; the doping concentration is gradually increased from low, so that the passivation performance of the film is ensured, and a certain energy band gradient is formed, thereby accelerating the transmission of holes, and obviously improving the conversion efficiency of the battery.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. In the drawings:
fig. 1 is a schematic structural diagram of a heterojunction solar cell according to the present invention;
FIG. 2 is a flow chart of a method for fabricating a high efficiency heterojunction solar cell according to the present invention;
FIG. 3 is a graph of boron dopant gas concentration distribution during deposition of a P-type microcrystalline silicon layer of a high efficiency heterojunction solar cell and a method of fabricating the same according to the present invention;
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention.
As shown in fig. 1, the present invention provides a high efficiency heterojunction solar cell, comprising: the N-type silicon chip 1 is sequentially arranged on a first intrinsic amorphous silicon layer 2, an N-type amorphous silicon layer 3, a transparent conducting layer 6 and a metal grid line layer 7 on the front surface of the silicon chip. A second intrinsic amorphous silicon layer 4, a P-type microcrystalline silicon layer 5, a transparent conducting layer 6 and a metal grid line layer 7 which are arranged on the back of the silicon chip in sequence.
Wherein the P-type microcrystalline silicon layer 5 is formed by sequentially depositing through the concentration gradient of gradually-changed boron doping gas from low to high; the thickness of the P-type microcrystalline silicon layer is
(ii) a The crystallization rate of the P-type microcrystalline silicon layer is 50-70%;
the N-type silicon wafer can be a monocrystalline silicon wafer or a polycrystalline silicon wafer; the cell emitter is a P-type microcrystalline silicon layer, is formed by gradually changing the concentration gradient of the boron-doped gas from low to high, reduces the influence of doping defects on the passivation effect of intrinsic amorphous silicon, and is favorable for microcrystalline growth and improves the crystallization rate of a film under the low-boron doping condition; along with the gradual increase of the boron-doped concentration, a high built-in electric field is generated and a certain energy band gradient can be formed to further accelerate the transmission of the hole, so that the electrical property of the battery is improved, and the conversion efficiency of the battery is improved.
As shown in fig. 2, the present invention further provides a method for manufacturing a high efficiency heterojunction solar cell, comprising the following steps:
s01, providing a clean N-type silicon wafer for texturing;
s02, depositing a second intrinsic amorphous silicon layer on the back side of the silicon wafer of S01 by PECVD;
s03, depositing a first intrinsic amorphous silicon layer on the front side of the silicon wafer of the S02 by PECVD;
s04, depositing a phosphorus-doped N-type amorphous silicon layer on the second intrinsic amorphous silicon layer on the front surface of the silicon wafer of the S03 by PECVD;
s05, depositing a boron-doped P-type microcrystalline silicon layer on the first intrinsic amorphous silicon layer on the back side of the silicon wafer of the S04 by PECVD;
s06, depositing transparent conducting layers on the front N-type amorphous silicon layer and the back P-type microcrystalline silicon layer of the silicon wafer of the S05 through PVD magnetron sputtering;
s07, manufacturing metal grid line electrodes on the transparent conducting layers on the front side and the back side of the silicon wafer of S06;
examples
A manufacturing method of a high-efficiency heterojunction solar cell comprises the following specific processes:
s01, providing a clean N-type silicon wafer for texturing; forming a pyramid suede on the surface of an N-type silicon wafer in a sueding and cleaning mode, and keeping the surface clean;
s02, depositing a second intrinsic amorphous silicon layer on the back side of the silicon wafer of S01 by PECVD; introducing silane and hydrogen into a reaction cavity; the preset film forming temperature is 150-250 ℃; the pressure of the reaction gas is 30-150 Pa; thickness of deposition
；
S03, depositing a first intrinsic amorphous silicon layer on the front side of the silicon wafer of the S02 by PECVD; the specific process is that silane and hydrogen are introduced into a reaction cavity; the preset film forming temperature is 150-250 ℃; the pressure of the reaction gas is 30-150 Pa; thickness of deposit
；
S04, depositing a phosphorus-doped N-type amorphous silicon layer on the second intrinsic amorphous silicon layer on the front surface of the silicon wafer of the S03 by PECVD; the specific process is that phosphane, silane and hydrogen are introduced into a reaction cavity; the preset film forming temperature is 150-250 ℃; the pressure of the reaction gas is 30-150 Pa; thickness of deposit
；
S05, depositing a boron-doped P-type microcrystalline silicon layer on the first intrinsic amorphous silicon layer on the back side of the silicon wafer of S04 by PECVD; the specific process is that the preset film forming temperature is 150-250 ℃; introducing diborane, silane and hydrogen into the reaction cavity; wherein, the diborane concentration increases linearly along the thickness direction of the P-type microcrystalline silicon layer in a curve 1 manner as shown in fig. 3; specifically, the concentration of diborane is controlled to be 0-1% at the beginning of deposition, and then the concentration of diborane is linearly increased to 9-10% according to 1% increment; the diborane concentration can also increase along the thickness direction of the P-type microcrystalline silicon layer in a slow-first and fast-second mode according to a curve 2 mode, or increase in a fast-first and slow-second mode according to a curve 3 mode to form different modes of energy band gradients so as to accelerate the transmission of holes; the pressure of the reaction gas is 150-400 Pa; the hydrogen dilution ratio in the reaction gas is more than 95 percent; the deposition power density is 0.03-0.15W/cm 2 ；
S06, depositing ITO transparent conducting layers on the front N-type amorphous silicon layer and the back P-type microcrystalline silicon layer of the silicon wafer of the S05 through PVD magnetron sputtering; deposited to a thickness of
；
And S07, manufacturing silver grid line electrodes on the transparent conducting layers on the front surface and the back surface of the silicon chip of S06 through screen printing.
Table 1 shows the efficiency comparison of the inventive heterojunction cell with a conventional heterojunction cell, the inventive heterojunction cell shows excellent performance in electrical performance;
| Isc | Voc | FF | Eta | |
| existing HJT solar cell | 100％ | 100％ | 100％ | 100％ |
| The embodiments of the present application | 101.0％ | 100.3％ | 100.6％ | 101.9％ |
In summary, the high-efficiency heterojunction solar cell and the manufacturing method thereof provided by the invention adopt the P-type microcrystalline silicon layer to replace the P-type amorphous silicon layer in the prior art, and the P-type microcrystalline silicon layer is formed by sequentially depositing the gradually-changed boron doping gas concentration gradient from low to high, i.e. the low doping concentration adopted in the initial film forming stage is beneficial to the growth of a microcrystalline silicon film, thereby being beneficial to improving the crystallization rate of the P-type microcrystalline silicon; the doping concentration is gradually increased from low to ensure the passivation performance of the film and form certain energy band gradient so as to accelerate the transmission of holes, and the conversion efficiency of the battery is obviously improved. In addition, the P-type microcrystalline layer and the method for sequentially depositing and forming the P-type microcrystalline layer through the gradual change of the boron doping gas concentration gradient from low to high are also suitable for a back contact heterojunction solar cell (HBC), and can be used for replacing a P-type amorphous silicon layer of the existing HBC cell and a preparation process of the P-type amorphous silicon layer.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A high efficiency heterojunction solar cell, characterized by: the high efficiency heterojunction solar cell comprises: the N-type silicon wafer is sequentially arranged on a first intrinsic amorphous silicon layer, an N-type amorphous silicon layer, a transparent conducting layer and a metal grid line layer on the front surface of the silicon wafer. And the second intrinsic amorphous silicon layer, the P-type microcrystalline silicon layer, the transparent conducting layer and the metal grid line layer are sequentially arranged on the back surface of the silicon wafer. The P-type microcrystalline silicon layer is formed by sequentially depositing through a gradient of boron doping gas concentration from low to high.
2. The high efficiency heterojunction solar cell of claim 1, further characterized by: the thickness of the P-type microcrystalline silicon layer is
The crystallization rate of the P-type microcrystalline silicon layer is 50-70%.
3. The method for manufacturing a high-efficiency heterojunction solar cell according to claim 1 or 2, wherein: the method comprises the following steps:
providing an N-type silicon wafer which is subjected to texturing and cleaning;
depositing a second intrinsic amorphous silicon layer on the back of the silicon wafer through PECVD;
depositing a first intrinsic amorphous silicon layer on the front surface of the silicon wafer through PECVD;
depositing a phosphorus-doped N-type amorphous silicon layer on the second intrinsic amorphous silicon layer on the front surface of the silicon wafer through PECVD;
depositing a boron-doped P-type microcrystalline silicon layer on the first intrinsic amorphous silicon layer on the back surface of the silicon wafer through PECVD;
respectively depositing transparent conducting layers on the front N-type amorphous silicon layer and the back P-type microcrystalline silicon layer of the silicon wafer through PVD magnetron sputtering;
and respectively manufacturing metal grid line electrodes on the transparent conductive layers on the front side and the back side of the silicon wafer.
4. The method of fabricating a high efficiency heterojunction solar cell of claim 3, further characterized by: and the boron doping gas for depositing the P-type microcrystalline silicon layer is one or the mixture of diborane and TMB.
5. The method of claim 4, wherein the solar cell comprises: the concentration gradient of the boron doping gas is linearly increased in an increasing mode, or the boron doping gas is increased in a slow mode first and then in an increasing mode, or the boron doping gas is increased in a fast mode first and then in a slow mode.
6. The method of fabricating a high efficiency heterojunction solar cell of claim 3, further characterized by: the concentration gradient range of the boron doping gas for depositing the P-type microcrystalline silicon layer is 0-10%.
7. The method of fabricating a high efficiency heterojunction solar cell of claim 3, further characterized by: the pressure of the reaction gas for depositing the P-type microcrystalline silicon layer is 150-400Pa, and the dilution ratio of hydrogen in the reaction gas is more than 95 percent.
8. The method of fabricating a high efficiency heterojunction solar cell of claim 3, further characterized by: the deposition power density for depositing the P-type microcrystalline silicon layer is 0.03-0.15W/cm 2 。
9. The method of fabricating a high efficiency heterojunction solar cell of claim 3, further characterized by: the preset film forming temperature of PECVD is 150-250 ℃.
10. The high efficiency heterojunction solar cell of claim 1 or 2, wherein: the P-type microcrystalline layer and the method for forming the P-type microcrystalline layer through the gradual-change boron doping gas concentration gradient deposition from low to high are also suitable for a back contact heterojunction solar cell (HBC), and can be used for replacing a P-type amorphous silicon layer of the existing HBC and a preparation process thereof.
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| CN118117009A (en) * | 2024-04-30 | 2024-05-31 | 浙江润海新能源有限公司 | Preparation method of heterojunction solar cell |
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