CN106653928A - Novel heterojunction solar cell structure and manufacturing method therefor - Google Patents
Novel heterojunction solar cell structure and manufacturing method therefor Download PDFInfo
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- CN106653928A CN106653928A CN201611076047.1A CN201611076047A CN106653928A CN 106653928 A CN106653928 A CN 106653928A CN 201611076047 A CN201611076047 A CN 201611076047A CN 106653928 A CN106653928 A CN 106653928A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 10
- 238000002360 preparation method Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 21
- 230000008859 change Effects 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 238000002161 passivation Methods 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 2
- 230000007704 transition Effects 0.000 description 3
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a novel heterojunction solar cell structure. The novel heterojunction solar cell structure comprises a front electrode, a back electrode and monocrystal silicon positioned between the front electrode and the back electrode, wherein gradually-changed P/i layer and i/N layer are arranged on the front electrode and the monocrystal silicon, and the back electrode and the monocrystal silicon. In P and N manufacturing process, doped gas is not pumped firstly, so that a certain intrinsic noncrystalline silicon passivation layer is formed naturally; then the dosage of the doped gas is increased gradually, so that preparation of the P layer and the N layer is realized; and therefore, the gradually-changed passivation layer from i to P and from i to N is formed, so that a passivation effect is achieved while manufacturing procedures are simplified, and two interfaces (P/i and i/N) are further omitted, thereby simplifying the procedures and obtaining higher battery capacity.
Description
Technical field
The present invention relates to heterojunction solar battery field, specifically, is related specifically to a kind of novel heterojunction sun
Energy battery structure and preparation method thereof.
Background technology
Conventional heterojunction solar battery is a kind of reverse large area diode structure.In P and monocrystalline silicon, N and list
One layer of intrinsic non-crystalline silicon i is all inserted between crystal silicon, as passivation layer.Its preparation process is as shown in Figure 2：Conventional hetero-junctions
The P/i/c-Si/i/N structures of solar cell cause cell manufacturing process complicated, and needs deposit respectively P, i in different chamber
And N, and P/i the and i/N interfaces for being formed easily form Carrier recombination center, cause the loss of photogenerated current.
The content of the invention
Present invention aims to deficiency of the prior art, there is provided a kind of novel heterojunction solar battery structure
And preparation method thereof, during P and N is made, first it is not passed through impurity gas, the certain intrinsic amorphous silicon of such self-assembling formation
Passivation layer, is then gradually increased impurity gas amount, so as to reach the purpose for preparing P and N layers.What is so formed is one from i mistakes
The gradual change passivation layer for being transitioned into N to P and from i is crossed, had both played a part of passivation, in turn simplify production process, more reduce two
Interface (P/i and i/N).So as to reach the purpose that simplified operation obtains more big battery production capacity.
Technical problem solved by the invention can employ the following technical solutions to realize：
A kind of novel heterojunction solar battery structure, including front electrode, back electrode and positioned at the front electrode and the back of the body
Monocrystalline silicon between electrode；The P/i layers and i/N layers of gradual change type are provided with the front electrode and monocrystalline silicon, back electrode and monocrystalline silicon.
A kind of preparation method of novel heterojunction solar cell, comprises the steps：
1) n type single crystal silicon is chosen, and cleaning and texturing process is carried out to it；
2) silane, hydrogen are passed through in the P rooms of PECVD, glow discharge deposits i type layers；Subsequently keeping glow discharge shape
Under state, boron source impurity gas is gradually passed through toward the P rooms of PECVD, the P/ of P gradual change i layers is prepared on the side of n type single crystal silicon
I layers；
3) silane, hydrogen are passed through in the N rooms of PECVD, glow discharge deposits i type layers；Subsequently keeping glow discharge shape
Under state, phosphorus doping gas is gradually passed through toward the N rooms of PECVD, in the i/N that i gradual change N are prepared on the side of n type single crystal silicon
Layer；
4) electrode before prepared by the outside of the P/i layers, on the outside of the i/N layers back electrode is prepared；
5) metal grid lines are set in the outside of the front electrode and back electrode, obtain heterojunction solar battery.
Compared with prior art, beneficial effects of the present invention are as follows：
1st, battery structure of the present invention and preparation method can completely substitute original battery structure function.It is this by
P gradual change i layers substitute P and i two-layer non-crystalline silicons, and substitute the structure and preparation method of i and N two-layer non-crystalline silicons by i gradual change N layers,
Twice production process is reduced, battery is reduced and is transported the time of delivery to N rooms by i rooms transport to p rooms, by i rooms, reduce brightness
Twice gas mixes the gas time before light electric discharge, reduces adaptation matching process before glow discharge, greatlys save the making of battery
Time, increased production capacity.
2nd, additionally, this method at least reduces two processing chambers, equipment cost is greatlyd save.
Furthermore 3, prepared by this novel process is transition zone, reduces two boundary layers of p/i and i/n, is greatly reduced
Carrier is conducive to improving the short circuit current of battery in the compound of two interfaces of p/i and i/n.
Description of the drawings
Fig. 1 is heterojunction solar battery structured flowchart of the present invention.
Fig. 2 is the process chart of heterojunction solar battery of the present invention.
Specific embodiment
Technological means, creation characteristic, reached purpose and effect to make present invention realization is easy to understand, with reference to
Specific embodiment, is expanded on further the present invention.
Referring to Fig. 1, a kind of novel heterojunction solar battery structure of the present invention, including front electrode, back electrode, with
And the monocrystalline silicon between the front electrode and back electrode；It is provided with the front electrode and monocrystalline silicon, back electrode and monocrystalline silicon
The P/i layers and i/N layers of gradual change type.
Referring to Fig. 2, a kind of preparation method of novel heterojunction solar cell, comprise the steps：
1) n type single crystal silicon is chosen, and cleaning and texturing process is carried out to it；
2) silane, hydrogen are passed through in the P rooms of PECVD, glow discharge deposits i type layers；Subsequently keeping glow discharge shape
Under state, boron source impurity gas is gradually passed through toward the P rooms of PECVD, the P/ of P gradual change i layers is prepared on the side of n type single crystal silicon
I layers；
3) silane, hydrogen are passed through in the N rooms of PECVD, glow discharge deposits i type layers；Subsequently keeping glow discharge shape
Under state, phosphorus doping gas is gradually passed through toward the N rooms of PECVD, in the i/N that i gradual change N are prepared on the side of n type single crystal silicon
Layer；
4) electrode before prepared by the outside of the P/i layers, on the outside of the i/N layers back electrode is prepared；
5) metal grid lines are set in the outside of the front electrode and back electrode, obtain heterojunction solar battery.
The present invention eliminates the i layer passivation layers between P layers and monocrystalline silicon, and adopts impurity gas boron in control course of reaction
The intake of alkane is reaching while depositing the purpose of P and transition zone.
The present invention eliminates the i layer passivation layers between N layers and monocrystalline silicon, and adopts impurity gas phosphorus in control course of reaction
The intake of alkane is reaching while depositing the purpose of P and transition zone.
The present invention realizes the simplification of battery operation in the case where increasing any equipment；
The present invention reduces two boundary layer P/i and i/N boundary layers.
The general principle and principal character and advantages of the present invention of the present invention has been shown and described above.The technology of the industry
Personnel it should be appreciated that the present invention is not restricted to the described embodiments, the simply explanation described in above-described embodiment and specification this
The principle of invention, without departing from the spirit and scope of the present invention, the present invention also has various changes and modifications, these changes
Change and improvement is both fallen within scope of the claimed invention.The claimed scope of the invention by appending claims and its
Equivalent thereof.
Claims (2)
1. a kind of novel heterojunction solar battery structure, including front electrode, back electrode and positioned at the front electrode and the back of the body electricity
Monocrystalline silicon between pole；It is characterized in that：The P/i of gradual change type is provided with the front electrode and monocrystalline silicon, back electrode and monocrystalline silicon
Layer and i/N layers.
2. a kind of preparation method of novel heterojunction solar cell, it is characterised in that comprise the steps：
1) n type single crystal silicon is chosen, and cleaning and texturing process is carried out to it；
2) silane, hydrogen are passed through in the P rooms of PECVD, glow discharge deposits i type layers；Subsequently keeping glow discharge state
Under, boron source impurity gas is gradually passed through toward the P rooms of PECVD, the P/i of P gradual change i layers is prepared on the side of n type single crystal silicon
Layer；
3) silane, hydrogen are passed through in the N rooms of PECVD, glow discharge deposits i type layers；Subsequently keeping glow discharge state
Under, phosphorus doping gas is gradually passed through toward the N rooms of PECVD, in the i/N layers that i gradual change N are prepared on the side of n type single crystal silicon；
4) electrode before prepared by the outside of the P/i layers, on the outside of the i/N layers back electrode is prepared；
5) metal grid lines are set in the outside of the front electrode and back electrode, obtain heterojunction solar battery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611076047.1A CN106653928A (en) | 2016-11-30 | 2016-11-30 | Novel heterojunction solar cell structure and manufacturing method therefor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611076047.1A CN106653928A (en) | 2016-11-30 | 2016-11-30 | Novel heterojunction solar cell structure and manufacturing method therefor |
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| CN106653928A true CN106653928A (en) | 2017-05-10 |
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| CN201611076047.1A Pending CN106653928A (en) | 2016-11-30 | 2016-11-30 | Novel heterojunction solar cell structure and manufacturing method therefor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111312853A (en) * | 2019-12-31 | 2020-06-19 | 晋能光伏技术有限责任公司 | Film forming production process of heterojunction solar cell |
| CN115117182A (en) * | 2021-12-07 | 2022-09-27 | 福建金石能源有限公司 | High-efficiency heterojunction solar cell and manufacturing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101097969A (en) * | 2006-06-30 | 2008-01-02 | 通用电气公司 | Photovoltaic device which includes all-back-contact configuration, and related fabrication processes |
| CN101866973A (en) * | 2010-06-09 | 2010-10-20 | 中国科学院电工研究所 | Thin film silicon/crystalline silicon heterogenous pn junction structure for solar cell |
| CN102280502A (en) * | 2011-08-26 | 2011-12-14 | 上海师范大学 | Gradient doped silicon-based heterojunction solar cell and preparation method thereof |
| US20130118565A1 (en) * | 2011-11-14 | 2013-05-16 | International Business Machines Corporation | Temperature grading for band gap engineering of photovoltaic devices |
| CN104332512A (en) * | 2014-07-07 | 2015-02-04 | 河南科技大学 | Microcrystalline silicon thin film solar cell and preparing method thereof |
-
2016
- 2016-11-30 CN CN201611076047.1A patent/CN106653928A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101097969A (en) * | 2006-06-30 | 2008-01-02 | 通用电气公司 | Photovoltaic device which includes all-back-contact configuration, and related fabrication processes |
| CN101866973A (en) * | 2010-06-09 | 2010-10-20 | 中国科学院电工研究所 | Thin film silicon/crystalline silicon heterogenous pn junction structure for solar cell |
| CN102280502A (en) * | 2011-08-26 | 2011-12-14 | 上海师范大学 | Gradient doped silicon-based heterojunction solar cell and preparation method thereof |
| US20130118565A1 (en) * | 2011-11-14 | 2013-05-16 | International Business Machines Corporation | Temperature grading for band gap engineering of photovoltaic devices |
| CN104332512A (en) * | 2014-07-07 | 2015-02-04 | 河南科技大学 | Microcrystalline silicon thin film solar cell and preparing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111312853A (en) * | 2019-12-31 | 2020-06-19 | 晋能光伏技术有限责任公司 | Film forming production process of heterojunction solar cell |
| CN115117182A (en) * | 2021-12-07 | 2022-09-27 | 福建金石能源有限公司 | High-efficiency heterojunction solar cell and manufacturing method thereof |
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