CN104952964A - Preparation method of heterojunction solar cell and heterojunction solar cell - Google Patents
Preparation method of heterojunction solar cell and heterojunction solar cell Download PDFInfo
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- CN104952964A CN104952964A CN201510273756.8A CN201510273756A CN104952964A CN 104952964 A CN104952964 A CN 104952964A CN 201510273756 A CN201510273756 A CN 201510273756A CN 104952964 A CN104952964 A CN 104952964A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000002131 composite material Substances 0.000 claims abstract description 7
- 239000002905 metal composite material Substances 0.000 claims abstract description 4
- 239000001257 hydrogen Substances 0.000 claims description 23
- 229910052739 hydrogen Inorganic materials 0.000 claims description 23
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 238000004050 hot filament vapor deposition Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000013081 microcrystal Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 238000007405 data analysis Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000013569 fruit product Nutrition 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a preparation method of a heterojunction solar cell and the heterojunction solar cell. The method includes the steps of providing a substrate, and providing intrinsic layers at both sides of the substrate to form a first structure of the heterojunction solar cell; subjecting the intrinsic layer interfaces of the first structure to deoxidation process via plasma, and providing doped layers at both sides of the processed first structure to form a second structure; forming transparent conductive layers at both sides of the second structure to serve as a front electrode and a rear electrode, or forming a transparent conductive layer at one side of the second structure to serve as the front electrode and a composite rear electrode of transparent conductive oxide and a metal composite layer at the other side of the second structure. Photoelectric conversion efficiency of the heterojunction solar cell is thus improved.
Description
Technical field
The application relates to new energy field, is specifically related to a kind of preparation method and heterojunction solar battery of heterojunction solar battery.
Background technology
Solar cell also can be referred to as photovoltaic cell, it is a kind of new-generation technology utilizing photovoltaic effect solar radiation to be directly converted to electric energy, because it has the advantages such as resource abundance, clean, safety, life-span be long, be considered to one of the most promising reproducible energy technology.
Crystal silicon solar energy battery, comprise: monocrystaline silicon solar cell, polysilicon solar cell and high efficiency crystalline silicon solar cell etc., because crystal silicon solar energy battery has higher conversion efficiency and the industrialization technology of relative maturity, always in occupation of the sales quota of whole photovoltaic market about 85%.Efficient and low cost is the deciding factor of photovoltaic technology survival and development, and along with the rapid decline of crystal silicon manufacturing cost in recent years and the increase of power station, roof demand, high efficiency crystalline silicon technology is subject to industry and more and more payes attention to.The high-efficiency crystal silicon cell of volume production is mainly silicon heterogenous battery (Silicon Herero-junction Solar Cell) technology and IBC technology at present, silicon heterogenous battery technology, due to its low-temperature growth, the advantage such as processing step is simple, temperature coefficient is good and product stability is good, is expected to become one of photovoltaic industry mainstream technology.
Usual silicon heterogenous solar battery structure as shown in Figure 1, comprise p-type or N-shaped monocrystalline silicon piece, be provided with amorphous silicon base intrinsic layer in the both sides of monocrystalline silicon piece, arrange N-shaped amorphous silicon or microcrystal silicon layer in the side of intrinsic layer, opposite side arranges p-type amorphous silicon or microcrystal silicon layer; Oxidic, transparent, conductive layers is set on N-shaped amorphous silicon becomes, p-type amorphous silicon layer arranges including transparent conducting oxide layer or composite back electrode.
In the process of the silicon heterogenous solar cell of above-mentioned preparation, because described intrinsic layer, p-type amorphous silicon layer and N-shaped amorphous silicon layer need to carry out in different chambers, and then cause the generation of following problem:
In order to reduce production cost, silicon chip changes chamber and flaps needs to carry out in atmospheric environment, and this broken empty phenomenon also can make intrinsic layer and p-type amorphous silicon layer, and the interface of intrinsic layer and N-shaped amorphous silicon layer forms silicon oxide layer.Above-mentioned at intrinsic layer and p-type amorphous silicon layer, and the silicon oxide layer that formed of the interface of intrinsic layer and N-shaped amorphous silicon layer can hinder the collection of photogenerated current, reduces short circuit current Isc and fill factor, curve factor FF, and then causes battery efficiency to reduce.
How a kind of preparation method of heterojunction solar battery is provided, to avoid forming oxide layer at the interface of i/p and i/n, and causes battery efficiency to reduce.
Summary of the invention
The application provides a kind of preparation method of heterojunction solar battery, to solve the problems of the technologies described above.
The application provides a kind of preparation method of heterojunction solar battery, comprising:
One substrate is provided, intrinsic layer is set in the both sides of described substrate, form the first structure of heterojunction solar battery;
By plasma to the described intrinsic layer interface deoxidation process in described first structure, and the both sides of described first structure after treatment arrange doped layer respectively, form the second structure;
Transparency conducting layer is formed respectively, as front electrode and rear electrode in the both sides of described second structure; Or form transparency conducting layer in the side of described second structure as front electrode, opposite side formation transparent conductive oxide and metal composite layer are as composite back electrode.
Preferably, described by plasma to the described intrinsic layer interface deoxidation process in described first structure, and the both sides of described first structure after treatment doped layer respectively, form the second structure, be specially, by described first structure wherein side intrinsic layer interface deoxidation process and doped layer be set complete at same chamber, by the opposite side intrinsic layer interface deoxidation process in described first structure with arrange doped layer and complete at another same chamber, or, described first structure wherein side intrinsic layer interface deoxidation process and doped layer be set complete at different chamber respectively, opposite side intrinsic layer interface deoxidation process in described first structure and doped layer is set completes at different chamber respectively.
Preferably, described plasma adopts hydrogen plasma or argon plasma.
Preferably, described hydrogen plasma etching condition is adopted to be: described etch temperature scope, for being more than or equal to 150 degree, is less than or equal to 250 degree.
Preferably, the air pressure range of described hydrogen plasma, for being more than or equal to 0.1mbar, is less than or equal to 1.0mbar.
Preferably, to the range of flow of described hydrogen plasma for being more than or equal to 200sccm, 1200sccm is less than or equal to.
Preferably, the sputtering power scope of described hydrogen plasma, for being more than or equal to 100w, is less than or equal to 1000w; Frequency range, for being more than or equal to 13.56MHz, is less than or equal to 70MHz.
Preferably, the isoionic etch period scope of described hydrogen is more than or equal to 1 second, is less than or equal to 100 seconds.
Preferably, the isoionic etch period of described hydrogen is 20 seconds.
Preferably, in described second structure of formation, using plasma strengthens chemical vapour deposition technique or hot filament CVD deoxidation process.
The application also provides a kind of heterojunction solar battery, and described heterojunction solar battery adopts preparation method described above to be prepared from.
Compared with prior art, the application has the following advantages:
The preparation method of a kind of heterojunction solar battery that the application provides, before doped layer is set, deoxidation process is carried out by the interface of plasma to the first structure both sides intrinsic layer, after interface oxidation process, form doped layer, thus avoid forming silicon oxide layer between doped layer and intrinsic layer, and then improve the collection of photogenerated current, battery efficiency is improved.
Accompanying drawing explanation
Fig. 1 is the flow chart of preparation method first embodiment of a kind of heterojunction solar battery that the application provides;
Fig. 2 is the experimental data figure of preparation method first embodiment of a kind of heterojunction solar battery that the application provides.
Embodiment
Set forth a lot of detail in the following description so that fully understand the application.But the application can be much different from alternate manner described here to implement, those skilled in the art can when doing similar popularization without prejudice to when the application's intension, and therefore the application is by the restriction of following public concrete enforcement.
Please refer to shown in Fig. 1, Fig. 1 is the flow chart of preparation method first embodiment of a kind of heterojunction solar battery that the application provides.The preparation method of the heterojunction solar battery that the application provides, comprises the steps:
Step S100: provide a substrate, arranges intrinsic layer in the both sides of described substrate, forms the first structure of heterojunction solar battery.
In this step, described substrate can be p-type or N-shaped monocrystalline silicon piece; The thickness range of monocrystalline silicon piece, for being more than or equal to 70 μm, is less than or equal to 300 μm; Intrinsic layer can be the single or multiple lift structure such as amorphous silicon or amorphous silica, and thickness range, for being more than or equal to 2nm, is less than or equal to 20nm.
In this step, first making herbs into wool and cleaning are carried out to p-type or N-shaped monocrystalline silicon piece, the p-type after making herbs into wool and cleaning or N-shaped monocrystalline silicon piece are put into the first deposition chamber, silica-based intrinsic layer plated film is carried out to the one side of p-type or N-shaped monocrystalline silicon piece; Afterwards the p-type or N-shaped monocrystalline silicon piece with silica-based intrinsic layer are put into the second chamber, the another side of p-type or N-shaped monocrystalline silicon piece is carried out to the plated film of silica-based intrinsic layer, and then realize arranging intrinsic layer respectively in p-type or N-shaped monocrystalline silicon piece both sides, form the first structure of heterojunction solar battery.
Step S200: by plasma to the described intrinsic layer interface deoxidation process in described first structure, and the both sides of described first structure after treatment arrange doped layer respectively, form the second structure.
In this step, first the first structure of the heterojunction solar battery in described step S100 can be put into the 3rd deposition chamber, and pass into the gas such as hydrogen plasma or argon plasma to described 3rd deposition chambers, the oxide layer that described first intrinsic layer interface, structure side is formed can be etched by described hydrogen plasma or argon plasma, after removing oxide layer, doped layer is set on described intrinsic layer.
Then, again the first structure after etching is put into the 4th deposition chamber, the oxide layer that interface on described first structure opposite side intrinsic layer is formed is etched, etching mode can adopt the gas such as hydrogen plasma or argon plasma to realize equally, after etching, doped layer is set in this side, and then forms the second structure of heterojunction solar battery.
Wherein, during plasma etching, the temperature range of chamber for being more than or equal to 150 degree, can be less than or equal to 250 degree, preferably can control be more than or equal to 200 degree, be less than or equal to 220 degree; Air pressure range, for being more than or equal to 0.1mbar, is less than or equal to 1.0mbar; Range of flow, for being more than or equal to 200sccm, is less than or equal to 1200sccm; Sputtering power scope, for being more than or equal to 100w, is less than or equal to 1000w; Frequency range, for being more than or equal to 13.56MHz, is less than or equal to 70MHz; Etch period scope is more than or equal to 1 second, is less than or equal to 100 seconds, is preferably 20 seconds.
Above-mentioned to intrinsic layer interface in described first structure by the gas deoxidation process such as hydrogen (H) plasma or argon (Ar) plasma, chemical vapour deposition technique (PECVD) or hot filament CVD (HWCVD) can be strengthened by using plasma; In the present embodiment, preferred very high frequency PECVD method (VHF-PECVD).
In this step, described doped layer can be p-type amorphous silicon or microcrystal silicon layer, and described doped layer can be N-shaped amorphous silicon or microcrystal silicon layer.
In this step S200, described first structure wherein side intrinsic layer interface deoxidation process and doped layer is set can completes at same chamber; Opposite side intrinsic layer interface deoxidation process in described first structure and doped layer is set can completes at another same chamber.Can also be, described first structure wherein side intrinsic layer interface deoxidation process and doped layer be set complete at different chamber respectively, opposite side intrinsic layer interface deoxidation process in described first structure and arrange doped layer and complete at different chamber respectively, which enters in the process of chamber after needing to ensure deoxidation process does not exist broken empty phenomenon.
Will be understood that, described doped layer also can select plasma enhanced chemical vapor deposition method (PECVD) or hot filament CVD (HWCVD) deposition to be formed.
For better illustrating that the application provides experimental data for reference to the process of intrinsic layer interface oxidation in this step, specifically can with reference to shown in figure 2, Fig. 2 is the experimental data figure of preparation method first embodiment of a kind of heterojunction solar battery that the application provides.
Experiment one: control within 2 hours by the disposable spacer (in atmospheric environment) between i/n and i/p, simulate normal production status, it comprises: to interface processing and untreated two kinds of conditions;
Experiment two: the disposable spacer (in atmospheric environment) between i/n and i/p is controlled more than 24 hours, the state that line equipment breaks down is produced in simulation, and it comprises: to interface processing and untreated two kinds of conditions;
As can be seen from the Data Comparison of Fig. 2, normal production status (namely testing one), interface hydrogen plasma process and untreated average cell efficiency maintain an equal level, but product discreteness after the hydrogen plasma process of interface is less.When producing line equipment and breaking down (namely testing two), as fruit product i/n and i/p interface exposed air time more than 24 hours, heterojunction solar battery after the hydrogen plasma process of interface does not occur that efficiency reduces phenomenon, and without the heterojunction solar battery of interface processing, efficiency conversion (Effi) reduces, and short circuit current (Isc) density reduces and fill factor, curve factor (FF) reduces.And the product discreteness after the hydrogen process of interface is under control equally.
As can be seen from above-mentioned data analysis, the introducing of interface hydrogen plasma, effectively can prevent producing line and produce interruption, i/n and i/p interface exposes atmospheric efficiency and reduces phenomenon.The stability of production can be improved to a great extent, reduce product discreteness, improve product yield.
Step S300: form transparency conducting layer respectively, as front electrode and rear electrode in the both sides of described second structure; Or form transparency conducting layer in the side of described second structure as front electrode, opposite side formation transparent conductive oxide and metal composite layer are as composite back electrode.
The transparent conductive oxides such as In2O3:Sn, In2O3:W, ZnO or Al (TCO) layer can be selected, as front electrode in this step.
TCO and Ag can be selected in this step to be composite back electrode, or to select TCO, Ag and Al to be composite back electrode.
It should be noted that, the preparation of described front and back electrode can select screen printing mode to realize, but is not limited to this kind of mode and forms front and back electrode.
Based on above-mentioned, the application also provides a kind of heterojunction solar battery, and this heterojunction solar battery selects preparation method as described above, prepares and obtains.
Although the application with preferred embodiment openly as above; but it is not for limiting the application; any those skilled in the art are not departing from the spirit and scope of the application; can make possible variation and amendment, the scope that therefore protection range of the application should define with the application's claim is as the criterion.
Claims (11)
1. a preparation method for heterojunction solar battery, is characterized in that, comprising:
One substrate is provided, intrinsic layer is set in the both sides of described substrate, form the first structure of heterojunction solar battery;
By plasma to the described intrinsic layer interface deoxidation process in described first structure, and the both sides of described first structure after treatment arrange doped layer respectively, form the second structure;
Transparency conducting layer is formed respectively, as front electrode and rear electrode in the both sides of described second structure; Or form transparency conducting layer in the side of described second structure as front electrode, opposite side formation transparent conductive oxide and metal composite layer are as composite back electrode.
2. the preparation method of heterojunction solar battery according to claim 1, it is characterized in that: described by plasma to the described intrinsic layer interface deoxidation process in described first structure, and the both sides of described first structure after treatment arrange doped layer respectively, form the second structure, be specially, by described first structure wherein side intrinsic layer interface deoxidation process and doped layer be set complete at same chamber, by the opposite side intrinsic layer interface deoxidation process in described first structure with arrange doped layer and complete at another same chamber, or, described first structure wherein side intrinsic layer interface deoxidation process and doped layer be set complete at different chamber respectively, opposite side intrinsic layer interface deoxidation process in described first structure and doped layer is set completes at different chamber respectively.
3. the preparation method of heterojunction solar battery according to claim 1, is characterized in that: described plasma adopts hydrogen plasma or argon plasma.
4. the preparation method of heterojunction solar battery according to claim 3, is characterized in that: adopt described hydrogen plasma etching condition to be: described etch temperature scope, for being more than or equal to 150 degree, is less than or equal to 250 degree.
5. the preparation method of heterojunction solar battery according to claim 4, is characterized in that: the air pressure range of described hydrogen plasma, for being more than or equal to 0.1mbar, is less than or equal to 1.0mbar.
6. the preparation method of heterojunction solar battery according to claim 4, is characterized in that: to the range of flow of described hydrogen plasma for being more than or equal to 200sccm, be less than or equal to 1200sccm.
7. the preparation method of heterojunction solar battery according to claim 4, is characterized in that: the sputtering power scope of described hydrogen plasma, for being more than or equal to 100w, is less than or equal to 1000w; Frequency range, for being more than or equal to 13.56MHz, is less than or equal to 70MHz.
8. the preparation method of heterojunction solar battery according to claim 4, is characterized in that: the isoionic etch period scope of described hydrogen is more than or equal to 1 second, is less than or equal to 100 seconds.
9. the preparation method of heterojunction solar battery according to claim 8, is characterized in that: the isoionic etch period of described hydrogen is 20 seconds.
10. the preparation method of heterojunction solar battery according to claim 1, is characterized in that: in described second structure of formation, using plasma strengthens chemical vapour deposition technique or hot filament CVD deoxidation process.
11. 1 kinds of heterojunction solar batteries, is characterized in that: heterojunction solar battery adopts the heterojunction solar battery preparation method as described in the claims 1 to 10 any one to be prepared from.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105489668A (en) * | 2015-11-26 | 2016-04-13 | 新奥光伏能源有限公司 | Solar cell and surface treatment method of hydrogenated amorphous silicon i film layer thereof |
| CN105489669A (en) * | 2015-11-26 | 2016-04-13 | 新奥光伏能源有限公司 | Silicon heterojunction solar cell and interface treatment method therefor |
| CN106816494A (en) * | 2015-12-02 | 2017-06-09 | 钧石(中国)能源有限公司 | A kind of method of heterojunction solar battery reduction series resistance |
| CN112397614A (en) * | 2020-11-17 | 2021-02-23 | 东方日升（常州）新能源有限公司 | Silicon wafer surface treatment method of HIT battery, HIT battery preparation method and HIT battery |
| CN115241322A (en) * | 2022-06-22 | 2022-10-25 | 通威太阳能（安徽）有限公司 | Electrode deoxidation method, battery preparation method, battery and electronic product |
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| CN105489669A (en) * | 2015-11-26 | 2016-04-13 | 新奥光伏能源有限公司 | Silicon heterojunction solar cell and interface treatment method therefor |
| CN105489668B (en) * | 2015-11-26 | 2018-02-13 | 新奥光伏能源有限公司 | A kind of solar cell and its amorphous silicon hydride i film surface processing methods |
| CN106816494A (en) * | 2015-12-02 | 2017-06-09 | 钧石(中国)能源有限公司 | A kind of method of heterojunction solar battery reduction series resistance |
| CN112397614A (en) * | 2020-11-17 | 2021-02-23 | 东方日升（常州）新能源有限公司 | Silicon wafer surface treatment method of HIT battery, HIT battery preparation method and HIT battery |
| CN115241322A (en) * | 2022-06-22 | 2022-10-25 | 通威太阳能（安徽）有限公司 | Electrode deoxidation method, battery preparation method, battery and electronic product |
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