CN217606831U - High-efficiency heterojunction solar cell - Google Patents
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Abstract
The utility model provides a high-efficient heterojunction solar cell, it includes: the N-type silicon wafer is sequentially arranged on a first intrinsic amorphous silicon layer, an N-type doping layer, a front transparent conducting layer and a front metal grid line layer on the front of the silicon wafer; the second intrinsic amorphous silicon layer, the P-type doping layer, the back transparent conducting layer and the back metal grid line layer are sequentially arranged on the back of the silicon wafer; the N-type doped layer or/and the P-type doped layer is of a multi-layer composite layer structure, namely, the N-type doped layer or/and the P-type doped layer comprises a seed layer, a microcrystalline silicon oxide layer and a microcrystalline silicon layer. The N-type doped layer or/and the P-type doped layer of the high-efficiency heterojunction solar cell adopts a multilayer composite layer structure, the large optical band gap of the high-efficiency heterojunction solar cell greatly improves the short-circuit current of the cell, meanwhile, the seed layer at the interface of the intrinsic passivation layer improves the growth quality and the passivation effect of the film, and the high-efficiency heterojunction solar cell is in good contact with the microcrystalline silicon layer at the interface of the TCO film, so that the conversion efficiency of the cell is obviously improved.
Description
Technical Field
The utility model relates to a solar cell field especially relates to a high-efficient heterojunction solar cell.
Background
The heterojunction solar cell is simple in preparation process steps and low in process temperature, the product has the advantages of high power generation amount, high stability, no attenuation and low cost, the cost performance advantage of the heterojunction solar cell is shown along with continuous technical progress and policy promotion of the industry, and the heterojunction solar cell is likely to replace a crystalline silicon solar cell to become a next-generation mainstream photovoltaic cell.
The conventional heterojunction solar cell uses an N-type monocrystalline silicon wafer as a substrate, and a phosphorus-doped amorphous silicon N layer as a window layer of a light receiving surface, so that the cell has higher conversion efficiency; in order to further improve the efficiency of the heterojunction cell, in the prior art, carbon dioxide is doped into an amorphous silicon N layer serving as a window layer to form an N-type silicon oxygen thin film with a wider band gap, so that the short-circuit current of the cell is greatly improved. However, the addition of carbon dioxide can cause the defect state density of the material to increase, the conductivity to decrease, and the filling factor of the battery to obviously decrease.
Disclosure of Invention
To the above problem, the utility model provides a high-efficient heterojunction solar cell can promote battery short circuit current, open circuit voltage and fill factor simultaneously through the N type or/and the P type doped layer that adopt multilayer composite construction, and battery efficiency can obviously promote.
In order to achieve the above object, the utility model provides a high-efficient heterojunction solar cell, high-efficient heterojunction solar cell includes: the N-type silicon chip comprises a first intrinsic amorphous silicon layer, an N-type doping layer, a front transparent conducting layer and a front metal grid line layer which are sequentially arranged on the front surface of the silicon chip. The second intrinsic amorphous silicon layer, the P-type doping layer, the back transparent conducting layer and the back metal grid line layer are sequentially arranged on the back of the silicon wafer; the N-type doped layer and/or the P-type doped layer are/is of a multi-layer composite structure; the N-type doped layer with the multilayer composite layer structure comprises an N-surface seed layer, an N-type microcrystalline silicon oxide layer and an N-type microcrystalline silicon layer; the P-type doped layer with the multilayer composite layer structure comprises a P-side seed layer, a P-type microcrystalline silicon oxide layer and a P-type microcrystalline silicon layer.
Further, the thickness of the N-surface seed layer is 1-4nm, the thickness of the N-type microcrystalline silicon oxide layer is 4-8nm, and the thickness of the N-type microcrystalline silicon layer is 1-4nm.
Further, the thickness of the P-surface seed layer is 1-4nm, the thickness of the P-type microcrystalline silicon oxide layer is 2-6nm, and the thickness of the P-type microcrystalline silicon layer is 8-20nm.
The utility model also provides a back contact heterojunction solar cell (HBC) contains N type monocrystalline silicon piece, establishes in proper order at positive pyramid matte of silicon chip, intrinsic amorphous silicon layer, the anti-reflection stratum of one deck. And the intrinsic amorphous silicon layer, the P-type amorphous silicon layer, the transparent conductive film layer and the metal grid line layer are sequentially arranged on the surface of the P region on the back surface of the silicon wafer. And the intrinsic amorphous silicon layer, the N-type amorphous silicon layer, the transparent conductive film layer and the metal grid line layer are sequentially arranged on the surface of the N region on the back surface of the silicon wafer. The N-type amorphous silicon layer is replaced by the N-type doped layer with the multilayer composite layer structure or/and the P-type amorphous silicon layer is replaced by the P-type doped layer with the multilayer composite layer structure.
Compared with the prior art, the utility model provides a high-efficient heterojunction solar cell, its N type or/and P type doped layer adopt multilayer composite layer structure, and it contains seed layer, micrite silicon oxide layer and micrite silicon layer promptly, has following beneficial effect:
(1) The growth quality of the film is improved, and the reduction of the passivation effect caused by the diffusion of the doped impurities into the intrinsic passivation layer is reduced;
(2) The N-type microcrystalline silicon oxide layer and/or the P-type microcrystalline silicon oxide layer are/is formed by introducing carbon dioxide into the N-type doped layer or/and the P-type doped layer, and the optical band gap of the N-type microcrystalline silicon oxide layer and/or the P-type microcrystalline silicon oxide layer is larger, so that the absorption of the cell to light is increased; larger energy band bending can be brought at the PN junction interface, so that the open-circuit voltage of the battery is improved;
(3) Carbon dioxide doping is not carried out on the N-type doping layer or/and the third layer of the P-type doping layer, so that good electric contact with a subsequent TCO film is kept, and series resistance is reduced;
in summary, the high-efficiency heterojunction solar cell and the manufacturing method thereof provided by the invention have the advantages that the N-type doping layer or/and the P-type doping layer adopt a multi-layer composite structure, namely an N-type seed layer, an N-type microcrystalline silicon oxide layer, an N-type microcrystalline silicon layer composite layer or a P-type seed layer, a P-type microcrystalline silicon oxide layer and a P-type microcrystalline silicon oxide layer, the large optical band gap of the high-efficiency heterojunction solar cell greatly improves the short-circuit current of the cell, the seed layer at the interface with the intrinsic passivation layer improves the film growth quality and the passivation effect, and the N-type microcrystalline silicon layer or/and the P-type microcrystalline silicon layer at the interface with the TCO film form good contact, so that the conversion efficiency of the cell is obviously improved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. In the drawings:
fig. 1 is a schematic structural diagram of a high-efficiency heterojunction solar cell provided in embodiment 1 of the present invention.
Fig. 2 is a schematic structural diagram of a high-efficiency heterojunction solar cell provided in embodiment 2 of the present invention.
Fig. 3 is a schematic structural diagram of a high-efficiency heterojunction solar cell provided in embodiment 3 of the present invention.
Fig. 4 is a schematic view of the manufacturing process of the high-efficiency heterojunction solar cell of the present invention.
The reference numbers illustrate: the N-type microcrystalline silicon wafer comprises an N-type silicon wafer 10, a first intrinsic amorphous silicon layer 20, an N-type doping layer 30, a front transparent conducting layer 60-1, a front metal gate line layer 70-1, a second intrinsic amorphous silicon layer 40, a P-type doping layer 50, a back transparent conducting layer 60-2, a back metal gate line layer 70-2, an N-type seed layer 31, an N-type microcrystalline silicon oxide layer 32, an N-type microcrystalline silicon layer 33, a P-type seed layer 51, a P-type microcrystalline silicon oxide layer 52 and a P-type microcrystalline silicon layer 53.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1-3, the present invention provides a high efficiency heterojunction solar cell, comprising: the N-type silicon wafer 10 comprises a first intrinsic amorphous silicon layer 20, an N-type doped layer 30, a front transparent conductive layer 60-1 and a front metal grid line layer 70-1 which are sequentially arranged on the front surface of the silicon wafer 10. A second intrinsic amorphous silicon layer 40, a P-type doping layer 50, a back transparent conductive layer 60-2 and a back metal grid line layer 70-2 which are sequentially arranged on the back of the silicon wafer 10; the N-type doping layer 30 or/and the P-type doping layer 50 are/is of a multilayer composite structure, and the N-type doping layer of the multilayer composite structure comprises an N-surface seed layer 31, an N-type microcrystalline silicon oxide layer 32 and an N-type microcrystalline silicon layer 33; the P-type doped layer with the multilayer composite layer structure comprises a P-side seed layer 51, a P-type microcrystalline silicon oxide layer 52 and a P-type microcrystalline silicon layer 53.
The N-type silicon wafer is a monocrystalline silicon wafer or a polycrystalline silicon wafer.
The thickness of the N-side seed layer 31 is 1-4nm.
The thickness of the N-type microcrystalline silicon oxide layer 32 is 4-8nm.
The thickness of the N-type microcrystalline silicon layer 33 is 1-4nm.
The thickness of the P-side seed layer 51 is 1-4nm.
The thickness of the P-type microcrystalline silicon oxide layer 52 is 2-6nm.
The thickness of the P-type microcrystalline silicon layer 53 is 8-20nm.
The following detailed description of the method for fabricating a high-efficiency heterojunction solar cell according to the present invention is made with reference to the accompanying drawings and examples:
as shown in fig. 4, the method for manufacturing a high efficiency heterojunction solar cell includes the following steps:
s01, providing a clean N-type silicon wafer for texturing;
s02, depositing a second intrinsic amorphous silicon layer on the back of the silicon wafer through PECVD;
s03, depositing a first intrinsic amorphous silicon layer on the front surface of the silicon wafer through PECVD;
s04, sequentially depositing a seed layer, an N-type microcrystalline silicon oxide layer and an N-type microcrystalline silicon layer on the second intrinsic amorphous silicon layer on the front surface of the silicon wafer through PECVD (plasma enhanced chemical vapor deposition) to form an N-type doped layer;
s05, depositing a P-type doping layer on the first intrinsic amorphous silicon layer on the back surface of the silicon wafer through PECVD;
s06, depositing transparent conducting layers on the N-type doping layer on the front side and the P-type doping layer on the back side of the silicon wafer through PVD magnetron sputtering respectively;
s07, respectively manufacturing metal grid line electrodes on the transparent conductive layers on the front side and the back side of the silicon wafer;
wherein, the process of depositing the seed layer in the step S04 is to introduce mixed gas of silane and hydrogen, and the pressure of reaction gas is 100-300Pa;
the process for depositing the N-type microcrystalline silicon oxide layer in the step S04 comprises the steps of introducing mixed gas of silane, phosphane, hydrogen and carbon dioxide, wherein the pressure of the reaction gas is 150-400Pa, the proportion of the phosphane to the silane is 1% -10%, and the proportion of the carbon dioxide to the silane is 50% -100%;
introducing mixed gas of silane, phosphane and hydrogen into the process of depositing the N-type microcrystalline silicon layer in the step S04, wherein the pressure of reaction gas is 150-400Pa, and the ratio of phosphane to silane is 1% -10%;
the film forming temperature preset by PECVD in the step S04 is 150-250 ℃.
The utility model also provides a back contact heterojunction solar cell (HBC), contain N type monocrystalline silicon piece, establish in proper order at positive pyramid matte of silicon chip, intrinsic amorphous silicon layer, one deck reflection reducing layer. And the intrinsic amorphous silicon layer, the P-type amorphous silicon layer, the transparent conductive film layer and the metal grid line layer are sequentially arranged on the surface of the P region on the back surface of the silicon wafer. And the intrinsic amorphous silicon layer, the N-type amorphous silicon layer, the transparent conductive film layer and the metal grid line layer are sequentially arranged on the surface of the N region on the back surface of the silicon wafer. The N-type amorphous silicon layer is replaced by the N-type doped layer with the multilayer composite layer structure or/and the P-type amorphous silicon layer is replaced by the P-type doped layer with the multilayer composite layer structure.
Example 1:
as shown in fig. 1, a high efficiency heterojunction solar cell comprises: the N-type silicon wafer 10 comprises a first intrinsic amorphous silicon layer 20, an N-type doped layer 30, a front transparent conductive layer 60-1 and a front metal grid line layer 70 which are sequentially arranged on the front surface of the silicon wafer 10. A second intrinsic amorphous silicon layer 40, a P-type doping layer 50, a back transparent conductive layer 60-2 and a back metal grid line layer 70-2 which are sequentially arranged on the back of the silicon wafer 10; the N-type doping layer 30 and the P-type doping layer 50 are both of a multilayer composite structure, and the N-type doping layer of the multilayer composite structure comprises an N-surface seed layer 31, an N-type microcrystalline silicon oxide layer 32 and an N-type microcrystalline silicon layer 33; the P-type doped layer 50 with the multi-layered composite structure includes a P-type seed layer 51, a P-type microcrystalline silicon oxide layer 52, and a P-type microcrystalline silicon layer 53.
The manufacturing method of the high-efficiency heterojunction solar cell comprises the following specific processes:
s01, providing a clean N-type silicon wafer for texturing; forming a pyramid suede on the surface of an N-type silicon wafer in a texturing and cleaning mode, and keeping the surface clean; the N-type silicon wafer is a monocrystalline silicon wafer.
S02, depositing a second intrinsic amorphous silicon layer on the back surface of the silicon wafer of the S01 through PECVD; the specific process is that silane and hydrogen are introduced into a reaction cavity; the preset film forming temperature is 150-250 ℃; the pressure of the reaction gas is 30-150Pa; the deposition thickness is 5-10nm.
S03, depositing a first intrinsic amorphous silicon layer on the front surface of the silicon wafer of the S02 through PECVD; introducing silane and hydrogen into a reaction cavity; the preset film forming temperature is 150-250 ℃; the pressure of the reaction gas is 30-150Pa; the deposition thickness is 4-7nm.
S04, sequentially depositing an N-face seed layer, an N-type microcrystalline silicon oxide layer and an N-type microcrystalline silicon layer on the first intrinsic amorphous silicon layer on the front surface of the silicon wafer of the S03 through PECVD (plasma enhanced chemical vapor deposition) to form a multi-layer composite structure N-type doped layer; the specific process is that the preset film forming temperature is 150-250 ℃; introducing mixed gas of silane and hydrogen into the reaction chamber at a pressure of 100-300Pa, and depositingThe layer is used as a seed layer and has the thickness of 1-4nm; then introducing mixed gas of silane, phosphane, hydrogen and carbon dioxide into the reaction cavity, wherein the ratio of phosphane to silane is 1-10%, the ratio of carbon dioxide to silane is 50-100%, the pressure of the reaction gas is 150-400Pa, and the deposited second layer is an N-type microcrystalline silicon oxide layer with the thickness of 4-8nm; finally, introducing mixed gas of silane, phosphane and hydrogen into the reaction cavity, wherein the ratio of phosphane to silane is 1-10%, the pressure of the reaction gas is 150-400Pa, and a third layer is deposited to be an N-type microcrystalline silicon layer, and the thickness of the third layer is 1-4nm; the deposition power density is 0.03-0.3W/cm 2 。
S05, depositing a P-side seed layer, a P-type microcrystalline silicon oxide layer and a P-type microcrystalline silicon layer on the second intrinsic amorphous silicon layer on the back surface of the silicon wafer of the S04 by PECVD to form a multi-layer composite structure P-type doped layer; the specific process is that the preset film forming temperature is 150-250 ℃; introducing mixed gas of silane and hydrogen into a reaction cavity at the pressure of 100-300Pa, and depositing a first layer as a P-surface seed layer with the thickness of 1-4nm; then introducing mixed gas of silane, diborane, hydrogen and carbon dioxide into the reaction cavity, wherein the proportion of diborane to silane is 1-10%, the proportion of carbon dioxide to silane is 50-100%, the pressure of the reaction gas is 150-400Pa, and the deposited second layer is a P-type microcrystalline silicon oxide layer with the thickness of 2-6nm; finally, introducing mixed gas of silane, diborane and hydrogen into the reaction cavity, wherein the ratio of diborane to silane is 1-10%, the pressure of the reaction gas is 150-400Pa, and a third layer is deposited, namely a P-type microcrystalline silicon layer with the thickness of 8-20nm; the deposition power density is 0.05-0.4W/cm 2 。
S06, depositing an ITO transparent conducting layer on the front N-type doping layer and the back P-type doping layer of the silicon wafer in the S05 through PVD magnetron sputtering; the deposition thickness is 90-110nm.
And S07, manufacturing silver grid line electrodes on the transparent conducting layers on the front side and the back side of the silicon wafer of the S06 through screen printing.
Example 2
As shown in fig. 2, a high efficiency heterojunction solar cell comprises: the N-type silicon wafer 10 comprises a first intrinsic amorphous silicon layer 20, an N-type doped layer 30, a front transparent conductive layer 60-1 and a front metal grid line layer 70 which are sequentially arranged on the front surface of the silicon wafer 10. A second intrinsic amorphous silicon layer 40, a P-type doped layer 50, a back transparent conductive layer 60-2 and a back metal grid line layer 70-2 sequentially arranged on the back of the silicon wafer 10; the N-type doped layer 30 has a multi-layer composite structure, and the multi-layer composite structure N-type doped layer includes an N-side seed layer 31, an N-type microcrystalline silicon oxide layer 32, and an N-type microcrystalline silicon layer 33.
The specific process of the manufacturing method of the high-efficiency heterojunction solar cell is different from that of the embodiment 1 only in that:
s05, depositing a P-type doping layer on the second intrinsic amorphous silicon layer on the back surface of the silicon wafer of the S04 by PECVD; introducing diborane, silane and hydrogen into the reaction cavity; the preset film forming temperature is 150-250 ℃; the pressure of the reaction gas is 30-150Pa; the deposition thickness is 6-14nm.
Example 3
As shown in fig. 3, a high efficiency heterojunction solar cell comprises: the N-type silicon wafer 10 comprises a first intrinsic amorphous silicon layer 20, an N-type doped layer 30, a front transparent conductive layer 60-1 and a front metal grid line layer 70 which are sequentially arranged on the front surface of the silicon wafer 10. A second intrinsic amorphous silicon layer 40, a P-type doping layer 50, a back transparent conductive layer 60-2 and a back metal grid line layer 70-2 which are sequentially arranged on the back of the silicon wafer 10; the P-type doped layer 50 has a multi-layer composite structure, and the P-type doped layer 50 has a P-side seed layer 51, a P-type microcrystalline silicon oxide layer 52, and a P-type microcrystalline silicon layer 53.
The specific process of the manufacturing method of the high-efficiency heterojunction solar cell is different from that of the embodiment 1 only in that:
s04, depositing an N-type doping layer on the first intrinsic amorphous silicon layer on the front side of the silicon wafer of the S03 through PECVD; the specific process is that phosphane, silane and hydrogen are introduced into a reaction cavity; the preset film forming temperature is 150-250 ℃; the pressure of the reaction gas is 30-150Pa; the deposition thickness is 4-7nm.
Example 4
A back contact heterojunction solar cell (HBC) comprises an N-type monocrystalline silicon wafer, a pyramid textured surface, an intrinsic amorphous silicon layer and an anti-reflection layer, wherein the pyramid textured surface, the intrinsic amorphous silicon layer and the anti-reflection layer are sequentially arranged on the front surface of the silicon wafer. And the intrinsic amorphous silicon layer, the P-type amorphous silicon layer, the transparent conductive film layer and the metal grid line layer are sequentially arranged on the surface of the P region on the back surface of the silicon wafer. And the intrinsic amorphous silicon layer, the N-type amorphous silicon layer, the transparent conductive film layer and the metal grid line layer are sequentially arranged on the surface of the N region on the back surface of the silicon wafer. The N-type amorphous silicon layer and the P-type amorphous silicon layer are respectively replaced by the multi-layered composite layer structure P-type doped layer of the multi-layered composite layer structure N-type doped layer described in embodiment 1.
Example 5
A back contact heterojunction solar cell (HBC) comprises an N-type monocrystalline silicon wafer, a pyramid textured surface, an intrinsic amorphous silicon layer and an anti-reflection layer, wherein the pyramid textured surface, the intrinsic amorphous silicon layer and the anti-reflection layer are sequentially arranged on the front surface of the silicon wafer. And the intrinsic amorphous silicon layer, the P-type amorphous silicon layer, the transparent conductive film layer and the metal grid line layer are sequentially arranged on the surface of the P region on the back surface of the silicon wafer. And the intrinsic amorphous silicon layer, the N-type amorphous silicon layer, the transparent conductive film layer and the metal grid line layer are sequentially arranged on the surface of the N region on the back surface of the silicon wafer. Only the N-type amorphous silicon layer is replaced by the N-type doped layer with the multilayer composite layer structure in the embodiment 1.
Example 6
A back contact heterojunction solar cell (HBC) comprises an N-type monocrystalline silicon wafer, and a pyramid textured surface, an intrinsic amorphous silicon layer and an anti-reflection layer which are sequentially arranged on the front surface of the silicon wafer. And the intrinsic amorphous silicon layer, the P-type amorphous silicon layer, the transparent conductive film layer and the metal grid line layer are sequentially arranged on the surface of the P region on the back surface of the silicon wafer. And the intrinsic amorphous silicon layer, the N-type amorphous silicon layer, the transparent conductive film layer and the metal grid line layer are sequentially arranged on the surface of the N region on the back surface of the silicon wafer. Only the P-type amorphous silicon layer is replaced by the P-type doped layer with the multi-layer composite layer structure described in embodiment 1.
Table 1 lists the utility model provides a heterojunction solar cell and conventional heterojunction solar cell's efficiency contrast, the result shows the utility model provides a heterojunction solar cell shows more excellent performance on the electrical property, specifically as follows:
the utility model provides a high-efficient heterojunction solar cell adopts the multilayer composite bed of N face seed layer, N type micrite silicon oxide layer and N type micrite silicon layer as N type doping layer or/and adopt the multilayer composite bed of P face seed layer, P type micrite silicon oxide layer and P type micrite silicon layer as P type doping layer. The first N-surface seed layer or P-surface seed layer and the N-type third microcrystalline silicon layer or the P-type third microcrystalline silicon layer are thinner than the second N-type microcrystalline silicon oxide layer or the second P-type microcrystalline silicon oxide layer, so that the absorption of the cell to light can be increased by utilizing the larger optical band gap of the second N-type microcrystalline silicon oxide layer or the second P-type microcrystalline silicon oxide layer; the introduced seed layer improves the growth quality and passivation effect of the film; and carbon dioxide doping is not carried out on the third layer, so that good electric contact with a subsequent TCO film is favorably kept, series resistance is reduced, and the conversion efficiency of the cell is improved.
The present invention is not intended to be limited to the particular embodiments shown and described, and all changes, equivalents and modifications that come within the spirit and scope of the invention are desired to be protected.
Claims (3)
1. A high efficiency heterojunction solar cell, characterized by: the high efficiency heterojunction solar cell comprises: the N-type silicon wafer is sequentially arranged on a first intrinsic amorphous silicon layer, an N-type doping layer, a front transparent conducting layer and a front metal grid line layer on the front of the silicon wafer; the second intrinsic amorphous silicon layer, the P-type doping layer, the back transparent conducting layer and the back metal grid line layer are sequentially arranged on the back of the silicon wafer; the N-type doped layer or/and the P-type doped layer is/are of a multi-layer composite layer structure; the N-type doped layer with the multilayer composite layer structure comprises an N-surface seed layer, an N-type microcrystalline silicon oxide layer and an N-type microcrystalline silicon layer; the P-type doped layer with the multilayer composite layer structure comprises a P-side seed layer, a P-type microcrystalline silicon oxide layer and a P-type microcrystalline silicon layer.
2. The high efficiency heterojunction solar cell of claim 1, further characterized by: the thickness of the N surface seed layer is 1-4nm; the thickness of the N-type microcrystalline silicon oxide layer is 4-8nm; the thickness of the N-type microcrystalline silicon layer is 1-4nm.
3. The high efficiency heterojunction solar cell of claim 1, further characterized by: the thickness of the P-surface seed layer is 1-4nm; the thickness of the P-type microcrystalline silicon oxide layer is 2-6nm; the thickness of the P-type microcrystalline silicon layer is 8-20nm.
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