CN105489668B - A kind of solar cell and its amorphous silicon hydride i film surface processing methods - Google Patents
A kind of solar cell and its amorphous silicon hydride i film surface processing methods Download PDFInfo
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 67
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 238000003672 processing method Methods 0.000 title claims abstract description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 72
- 239000001257 hydrogen Substances 0.000 claims abstract description 70
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 70
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 57
- 229910052786 argon Inorganic materials 0.000 claims abstract description 36
- 238000003851 corona treatment Methods 0.000 claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 238000002156 mixing Methods 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 11
- 238000005984 hydrogenation reaction Methods 0.000 claims description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 abstract description 30
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract description 30
- 239000001307 helium Substances 0.000 abstract description 29
- 238000002161 passivation Methods 0.000 abstract description 15
- 238000004140 cleaning Methods 0.000 abstract description 13
- 150000002431 hydrogen Chemical class 0.000 abstract description 13
- 239000000203 mixture Substances 0.000 abstract description 10
- 230000009471 action Effects 0.000 abstract description 6
- 230000008439 repair process Effects 0.000 abstract description 4
- 210000004027 cell Anatomy 0.000 description 28
- 238000006243 chemical reaction Methods 0.000 description 19
- 238000005516 engineering process Methods 0.000 description 7
- 230000006872 improvement Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 150000003376 silicon Chemical class 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of silicon heterogenous solar cell and its amorphous silicon hydride i film surface processing methods, corona treatment is carried out to amorphous silicon hydride i film surfaces using the mixing of hydrogen argon or hydrogen helium mixture, both amorphous silicon hydride i film surfaces can preferably be cleaned for physically by argon or helium plasma, the increase of hydrogen plasma quantity can also be promoted, so as to strengthen passivation and the cleaning performance to amorphous silicon hydride i film surfaces；Meanwhile slight damage can be produced during argon or helium plasma physical bombardment to amorphous silicon hydride i film surfaces, hydrogen plasma not only plays passivation to amorphous silicon hydride i film surfaces, can also repair this slight damage.Hydrogen argon mixes or hydrogen helium hybrid plasma synergy, preferably passivation and cleaning action can be played to amorphous silicon hydride i film surfaces, so as to lift battery performance.
Description
Technical field
The present invention relates to manufacture of solar cells technical field, more particularly to silicon heterogenous solar cell and its hydrogenation
Non-crystalline silicon i film surface processing methods.
Background technology
Silicon heterogenous solar cell is a kind of electric using mixed type made of crystalline silicon substrates and amorphous silicon membrane technique
Pond, there is high conversion efficiency, the advantage such as technological process is simple, temperature coefficient is low, get more and more people's extensive concerning.Existing silicon is heterogeneous
The production technology of joint solar cell includes：Cleaning, making herbs into wool, to amorphous silicon hydride i (ia-Si:H) film layer and amorphous silicon hydride p
(pa-Si:H) film layer and amorphous silicon hydride n (na-Si:H) film layer is deposited, transparent conductive oxide film is sunk
Product, gate electrode silk-screen printing, annealing etc..
Plasma treatment technique is one of important preparation technology of silicon heterogenous solar cell, is usually used in hydrogenated amorphous
Silicon i (ia-Si:H) the processing of film surface, it is possible to reduce state the defects of the unsaturated silicon dangling bonds in surface, reduce answering for interface
Close, improve the passivation effect at interface, lift the performance of battery.
Corona treatment can be divided into two kinds of physical treatment and chemical treatment.The reaction mechanism of physical treatment be utilize etc. from
Particle in daughter makees the bombardment of pure physics, the atom of material surface or the atom on attachment material surface is destroyed, conventional gas
Body is the inactive gas such as argon gas, helium.Chemically treated reaction mechanism be utilize height reaction particle living in plasma with
Chemical reaction effect occurs for material surface, and so as to realize that the contamination of molecular level removes purpose, conventional gas has hydrogen, oxygen
The gases such as gas, carbon tetrafluoride, Nitrogen trifluoride.
Existing silicon heterogenous solar cell mainly carries out plasma using hydrogen to the amorphous silicon hydride i film layers of deposition
Body processing, the processing method is a kind of handling process based on chemical reaction, and wherein hydrogen plasma saturable is hydrogenated amorphous
The defects of silicon i film surfaces unsaturated silicon dangling bonds state, the compound of interface is reduced, to reach the mesh of passivation interface defect state
, but hydrogen plasma energy is relatively low, and it is weaker to the cleansing power at interface, effective cleaning action can not be played so that dirty
Dye thing can not be cleaned completely, so as to influence battery performance.
Therefore, how to improve the cleaning performance of silicon heterogenous solar cell interface and passivation effect seems particularly significant.
The content of the invention
It is an object of the invention to provide a kind of amorphous silicon hydride i film surfaces processing side of silicon heterogenous solar cell
Method, amorphous silicon hydride i film layers can be carried out effectively to clean and be passivated, so as to remove its surface contaminant and its surface of saturation not
The defects of silicon dangling bonds of saturation state, reduce surface state, reduce Interface composites, improve interface performance, it is cell performance so as to improve
Energy.
The embodiments of the invention provide a kind of amorphous silicon hydride i film surface methods of silicon heterogenous solar cell, bag
Include：
S1, deposition of hydrogenated amorphous silicon i film layers；
S2, corona treatment, mixing are carried out to amorphous silicon hydride i film surfaces using mixed gas in the deposition chamber
Gas is hydrogen and argon gas mixing or hydrogen and helium mix.
Preferably, before performing step S2, in the deposition chamber using hydrogen amorphous silicon hydride i film surfaces are carried out etc. from
Daughter is handled.
Preferably, corona treatment is carried out to amorphous silicon hydride i film surfaces using hydrogen, processing time is 1 to 200
Second, more excellent, processing time is 10 to 150 seconds.
Preferably, corona treatment is carried out to amorphous silicon hydride i film surfaces using the mixed gas of hydrogen and argon gas,
Hydrogen and argon flow amount volume ratio are 1:0.01 to 1:10, processing time is 10 to 1000 seconds；More excellent, hydrogen and argon flow amount
Volume ratio is 1:0.1 to 1:5, processing time is 50~500 seconds.
Preferably, corona treatment is carried out to amorphous silicon hydride i film surfaces using the mixed gas of hydrogen and helium,
Hydrogen and helium gas flow volume ratio are 1:0.01 to 1:40, processing time is 10 to 3000 seconds；More excellent, hydrogen and helium gas flow
Volume ratio is 1:0.1 to 1:20；, processing time is 50 to 2000 seconds.
The embodiment of the present invention additionally provides a kind of silicon heterogenous solar cell, and the hydrogenation of silicon heterogenous solar cell is non-
Crystal silicon i film surfaces carry out corona treatment using above-mentioned arbitrary method.
In the technical scheme of the embodiment of the present invention, the amorphous silicon hydride i film layer tables of heterojunction solar battery are improved
Surface plasma processing method, using hydrogen and argon gas mixing or the mixed gas of hydrogen and helium mix to amorphous silicon hydride
I film layers carry out corona treatment, amorphous silicon hydride i film layers can be carried out effectively to clean and be passivated, so as to remove its surface
The defects of pollutant and the unsaturated silicon dangling bonds in its surface of saturation state, reduce surface state, reduce Interface composites, improve interface
Performance, so as to improve battery performance.
Brief description of the drawings
Fig. 1 is the amorphous silicon hydride i film surface processing methods of the silicon heterogenous solar cell of one embodiment of the invention.
Embodiment
Hydrogen is used to carry out in plasma treatment procedure amorphous silicon hydride i film layers in order to improve, because hydrogen plasma
Physical efficiency amount is relatively low, weaker to the cleansing power of film surface, can not play effective cleaning action, it is different that the present invention provides a kind of silicon
The amorphous silicon hydride i film surface processing methods of matter joint solar cell.To make the object, technical solutions and advantages of the present invention more
Add clear, the present invention is described in further detail by the following examples.
As shown in figure 1, one embodiment of the invention provides a kind of amorphous silicon hydride i film layers of silicon heterogenous solar cell
Surface treatment method, including：
S1, deposition of hydrogenated amorphous silicon i film layers；
S2, corona treatment, mixing are carried out to amorphous silicon hydride i film surfaces using mixed gas in the deposition chamber
Gas is hydrogen and argon gas mixing or hydrogen and helium mix.
Preferably, before performing step S2, in the deposition chamber using hydrogen amorphous silicon hydride i film surfaces are carried out etc. from
Daughter is handled.
Preferably, corona treatment is carried out to amorphous silicon hydride i film surfaces using hydrogen, processing time is 1 to 200
Second, more excellent, processing time is 10 to 150 seconds.
Preferably, corona treatment is carried out to amorphous silicon hydride i film surfaces using the mixed gas of hydrogen and argon gas,
Hydrogen and argon flow amount volume ratio are 1:0.01 to 1:10, processing time is 10 to 1000 seconds；More excellent, hydrogen and argon flow amount
Volume ratio is 1:0.1 to 1:5, processing time is 50~500 seconds.
Preferably, corona treatment is carried out to amorphous silicon hydride i film surfaces using the mixed gas of hydrogen and helium,
Hydrogen and helium gas flow volume ratio are 1:0.01 to 1:40, processing time is 10 to 3000 seconds；More excellent, hydrogen and helium gas flow
Volume ratio is 1:0.1 to 1:20；, processing time is 50 to 2000 seconds.
To amorphous silicon hydride i film surfaces carry out corona treatment when, using hydrogen and argon gas mixing or hydrogen and
The mixed gas of helium mix, both interface can preferably be cleaned for physically by argon or helium plasma,
The increase of hydrogen plasma quantity can also be promoted, so as to strengthen passivation and the cleaning performance to amorphous silicon hydride i film surfaces；
Meanwhile slight damage, hydrogen etc. can be produced during argon or helium plasma physical bombardment to amorphous silicon hydride i film surfaces
Gas ions not only play passivation to amorphous silicon hydride i film surfaces, can also repair this slight damage.Hydrogen argon mixes or hydrogen
Helium hybrid plasma is acted synergistically, and preferably passivation and cleaning action can be played to interface.
Table one is listed using hydrogen-argon-mixed body to battery after amorphous silicon hydride i film surfaces progress corona treatment
The data of performance.Battery performance is mainly represented with two data：1.Eff：Efficiency, the conversion efficiency of battery；2.FF：
Fill factor, the fill factor, curve factor of battery.Battery performance has been normalized, and normalized refers to by certain
Kind algorithm process will need data to be processed to be limited in the certain limit of needs, be easy to follow-up data to handle.In following tables
Normalize and refer to based on the battery performance prepared after former amorphous silicon hydride i film surface corona treatments (unit 1),
The battery performance prepared after amorphous silicon hydride i film surface corona treatments after improvement is contrasted with it, obtains one
Individual ratio, for example it is 20% that former treatment technology, which prepares the conversion efficiency of battery, improves processing technology of interface and prepares the conversion of battery
Efficiency is 20.2%, then battery conversion efficiency improves ((20.2-20)/20) * 100%=1%, i.e. galvanic cell conversion efficiency
For 1, battery conversion efficiency is 1.01 after improvement.
Table one carries out the battery performance of corona treatment using hydrogen-argon-mixed body
It is larger that the difficulty of lifting conversion efficiency of solar cell is limited by factors, lifting one thousandth unit is
Through being extraordinary improvement.As shown in Table 1, the battery conversion efficiency before improvement is 1 and fill factor, curve factor is 1, after improvement
After film surface treatment technology, the battery performance of solar cell has good lifting, and wherein conversion efficiency highest can improve
To 1.011, fill factor, curve factor highest can bring up to 1.0095.
Corona treatment is carried out to amorphous silicon hydride i film surfaces using hydrogen helium mixture, because helium atom amount is small
In argon, it is smaller to being damaged caused by amorphous silicon hydride i film surfaces, and corresponding cleaning performance is also slightly poor.Therefore, compared to hydrogen
For gas mixes with argon gas, amount of helium will be more than argon gas amount, hydrogen and helium gas flow volume ratio in hydrogen and helium mix gas
For 1:0.01 to 1:40, more excellent, hydrogen and helium gas flow volume ratio are 1:0.1 to 1:20；Hydrogen helium mixture processing time
Also longer than hydrogen-argon-mixed body processing time, its processing time is 10 to 3000 seconds, more excellent, and processing time is 50 to 2000
Second.
Corona treatment is carried out using the hydrogen helium mixture under above-mentioned condition, can be reached and hydrogen argon mixed processing phase
The conversion efficiency of near experimental result, wherein solar cell can bring up to 1.009, and fill factor, curve factor can bring up to 1.008 so that
Solar cell properties have obtained good lifting.
The embodiment of the present invention two：A kind of amorphous silicon hydride i film surface processing methods of silicon heterogenous solar cell, bag
Include：
Deposition of hydrogenated amorphous silicon i film layers；
Corona treatment is carried out to amorphous silicon hydride i film surfaces using hydrogen in the deposition chamber；
Corona treatment is carried out to amorphous silicon hydride i film surfaces using hydrogen and argon gas mixed gas again.
Table two lists the data of the battery performance using the solar cell obtained after the processing of the present embodiment method.Battery
Performance is mainly represented with two data：1.Eff：Efficiency, the conversion efficiency of battery；2.FF：Fill factor, battery
Fill factor, curve factor, battery performance has been normalized.
The battery performance of hydrogen-argon-mixed bulk plasmon processing after two first hydrogen plasma process of table
Due to first individually being handled using hydrogen plasma, first amorphous silicon hydride i film surfaces can be carried out necessarily
Passivation, damaged with reducing caused by argon plasma bombardment；Handled again using hydrogen-argon-mixed bulk plasmon, on the one hand
Argon plasma plays preferably cleaning performance and increases the quantity of hydrogen plasma, and another aspect hydrogen plasma plays more excellent
Passivation effect and repair slight damage caused by argon plasma bombardment, it is comprehensive to play more excellent cleaning action and passivation is made
With.
From upper table two, compared to the conversion efficiency 1 and fill factor, curve factor 1 of solar cell before improvement, using first hydrogen etc.
The conversion efficiency highest of solar cell can bring up to 1.015 after hydrogen-argon-mixed bulk plasmon processing after gas ions processing,
Fill factor, curve factor highest can bring up to 1.01 so that solar cell properties have obtained good lifting.
The embodiment of the present invention additionally provides a kind of silicon heterogenous solar cell, and the hydrogenation of silicon heterogenous solar cell is non-
Crystal silicon i film surfaces carry out corona treatment using above-mentioned arbitrary method.
In the technical scheme of the embodiment of the present invention, the amorphous silicon hydride i film layer tables of heterojunction solar battery are improved
Face processing method, corona treatment is carried out to amorphous silicon hydride i film surfaces using the mixing of hydrogen argon or hydrogen helium mixture,
Both amorphous silicon hydride i film surfaces can preferably be cleaned for physically by argon or helium plasma, moreover it is possible to
Enough promote the increase of hydrogen plasma quantity, so as to strengthen passivation and the cleaning performance to amorphous silicon hydride i film surfaces；Together
When, amorphous silicon hydride i film surfaces can be produced during argon or helium plasma physical bombardment slight damage, hydrogen etc. from
Daughter not only plays passivation to amorphous silicon hydride i film surfaces, can also repair this slight damage.Hydrogen argon mixes or hydrogen helium
Hybrid plasma is acted synergistically, and preferably passivation and cleaning action can be played to amorphous silicon hydride i film surfaces.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention
God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these changes and modification.
Claims (6)
- A kind of 1. amorphous silicon hydride i film surface processing methods of silicon heterogenous solar cell, it is characterised in that：S1, deposition of hydrogenated amorphous silicon i film layers；S2, corona treatment is carried out to the amorphous silicon hydride i film surfaces using hydrogen in the deposition chamber；Using mixing Gas carries out corona treatment to the amorphous silicon hydride i film surfaces, and the mixed gas is that hydrogen and argon gas mix；Its In, corona treatment, hydrogen and argon are carried out to the amorphous silicon hydride i film surfaces using the mixed gas of hydrogen and argon gas Throughput volume ratio is 1:2 to 1:10.
- 2. processing method as claimed in claim 1, it is characterised in that：Using the hydrogen to the amorphous silicon hydride i film layers Surface carries out corona treatment, and processing time is 1 to 200 second.
- 3. processing method as claimed in claim 2, it is characterised in that：Using the hydrogen to the amorphous silicon hydride i film layers Surface carries out corona treatment, and processing time is 10 to 150 seconds.
- 4. the processing method as described in claims 1 to 3 is any, it is characterised in that：Using the mixed gas pair of hydrogen and argon gas The amorphous silicon hydride i film surfaces carry out corona treatment, and processing time is 10 to 1000 seconds.
- 5. processing method as claimed in claim 4, it is characterised in that：Using the mixed gas of hydrogen and argon gas to the hydrogenation Non-crystalline silicon i film surfaces carry out corona treatment, and hydrogen and argon flow amount volume ratio are 1:2 to 1:5, processing time be 50~ 500 seconds.
- A kind of 6. silicon heterogenous solar cell, it is characterised in that：The amorphous silicon hydride i film layer tables of silicon heterogenous solar cell Face uses the method as described in claim 1 to 5 is any to carry out corona treatment.
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| CN109943823A (en) * | 2019-03-07 | 2019-06-28 | 上海米蜂激光科技有限公司 | The method for preparing a-Si:H film based on hydrogen plasma process |
| CN110931601A (en) * | 2019-11-27 | 2020-03-27 | 通威太阳能（安徽）有限公司 | Method for improving PID (proportion integration differentiation) resistance of crystalline silicon solar cell |
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