CN102103989A - Method for forming crystal silicon film - Google Patents
Method for forming crystal silicon film Download PDFInfo
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- CN102103989A CN102103989A CN2009102606833A CN200910260683A CN102103989A CN 102103989 A CN102103989 A CN 102103989A CN 2009102606833 A CN2009102606833 A CN 2009102606833A CN 200910260683 A CN200910260683 A CN 200910260683A CN 102103989 A CN102103989 A CN 102103989A
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Abstract
The invention provides a method for forming a crystal silicon film. The method comprises the following steps: providing a substrate, and forming a first silicon structure film (such as a noncrystalline silicon film) on the substrate; modifying the first silicon structure film to form a seed crystal layer, wherein the modification comprises a hydrogen plasma processing and a helium plasma processing; and directly forming a second silicon structure film (such as a microcrystalline silicon film) on the seed crystal layer. The method has the advantages of lower cost and higher quality due to the modification comprising the hydrogen plasma processing and the helium plasma processing.
Description
Technical field
The invention relates to a kind of method that forms crystal silicon film, refer to that especially a kind of hydrogen gas plasma and helium plasma of utilizing carries out the upgrading processing procedure to one first silicon structure film, to form the method for one second silicon structure film.
Background technology
At present amorphous silicon (amorphous silicon) film widely on liquid crystal flat panel display as the material of the semiconductor layer of pixel switching device, yet it is not good to cross low electron mobility, low drive current and element reliability, has caused the restriction of amorphous silicon thin-film materials on using.And silicon metal is different from amorphous silicon, is to have the silicon crystal grain structure, thereby has preferable physical characteristic, and therefore for example higher electron mobility becomes one of selection that replaces amorphous silicon thin-film materials.Wherein, silicon metal (crystallinesilicon) material can be according to the granular size or the crystal grain arrangement mode of its crystal grain, can divide into microcrystal silicon (microcrystalline silicon), how rice crystal silicon (nanocrystalline silicon), polysilicon different types such as (polycrystalline silicon).With the microcrystal silicon is example, and dealer's cathode edge develops this material at present, and main cause is and to have the electrical characteristic that is better than the amorphous silicon membrane crystal in the low temperature making.In addition, the irradiation that amorphous silicon membrane has with light produces irradiation attenuating effect (Staebler-Wronski effect), and microcrystalline silicon film is subjected to illumination effect slighter, so microcrystalline silicon thin film transistor shows than the better element stability of amorphous silicon film transistor.
Crystal silicon film is common manufacture method at present, has following three kinds.First kind is solid-phase crystallization technology (Solid phase crystalline, SPC), the method is crystallization under the amorphous silicon melt temperature, processing procedure is simple and thin film crystallization is more even, but because required crystallization temperature is at (600-1000 ℃) more than 600 ℃, and the processing procedure time long (16-20 hour), do not meet economic benefit, and be not suitable for glass substrate, need higher high temperature resistant quartz or the monocrystalline silicon substrate of use cost.Second kind is excimer laser annealing technology (Excimer laser annealing, ELA), the most general mode is to utilize the XeCl excimer laser with wavelength 308nm at present, in the enterprising line scanning of substrate, laser beam can make amorphous silicon membrane temperature moment (number 10ns) rise to fusing point in scanning, and then grows crystalline texture.Because action time is extremely short, so can not cause pyrolytic damage to substrate, goes for glass substrate, but its equipment cost height safeguard complexity, and the processing procedure time is long, has higher cost of manufacture.The third is the hydrogen dilution method (Hydrogen dilution technique) of chemical vapour deposition technique, in processing procedure, use a large amount of hydrogen, hydrogen plasma institute role is to etch away more weak silicon atom and then deposit a microcrystalline silicon film, but the method percent crystallization in massecuite still is on the low side and has a large amount of non crystalline structures.
Summary of the invention
One of purpose of the present invention is to provide a kind of method that forms crystal silicon film, to solve cost and the quality problems that known technology was faced.
A preferred embodiment of the present invention provides a kind of method that forms microcrystalline silicon film, comprises the following steps.One substrate is provided, comprises an amorphous silicon membrane on the substrate.Then, amorphous silicon membrane is carried out a upgrading processing procedure to form a crystal seed layer, wherein the upgrading processing procedure comprises a hydrogen gas plasma processing procedure and a helium plasma process, forms a microcrystalline silicon film at last again on crystal seed layer.
Another preferred embodiment of the present invention provides a kind of method that forms crystal silicon film, comprises the following steps.One substrate is provided, comprises one first silicon structure film on the substrate.Then, the first silicon structure film is carried out a upgrading processing procedure to form a crystal seed layer, wherein the upgrading processing procedure comprises a hydrogen gas plasma processing procedure and a helium plasma process, forms one second silicon structure film at last again on crystal seed layer.
The present invention forms the method for crystal silicon film, use hydrogen gas plasma and helium plasma that amorphous silicon membrane is carried out upgrading, get involved control film coring situation and reach lifting crystalline quality purpose, and the follow-up deposition manufacture process that carries out only need use the process parameter of amorphous silicon membrane can form microcrystalline silicon film, can be compatible with the amorphous silicon process technique, significantly shorten the processing procedure time, reduce production cost, and then improve the rate of capacity utilization.Therefore, formation crystal silicon film method of the present invention has the advantage of lower cost and better quality.
Your, see also following about detailed description of the present invention and accompanying drawing in order to make juror a nearlyer step understand feature of the present invention and technology contents.Yet appended graphic only for reference and aid illustration usefulness are not to be used for to the present invention's limitr in addition.
Description of drawings
Fig. 1 forms the schematic flow sheet of crystal silicon film method for the present invention.
Fig. 2 to Fig. 5 has illustrated the method schematic diagram of a preferred embodiment of the present invention formation microcrystalline silicon film.
Embodiment
In the middle of specification and aforesaid claim scope, used some vocabulary to censure specific element.The person with usual knowledge in their respective areas should understand, and same element may be called with different nouns by manufacturer.This specification and aforesaid claim scope are not used as the mode of distinct elements with the difference of title, but the benchmark that is used as distinguishing with the difference of element on function.Be an open term mentioned " comprising " or " comprising " in the middle of specification and the aforesaid claim in the whole text, so should be construed to " comprise but be not limited to ".
Please refer to Fig. 1.Fig. 1 forms the schematic flow sheet of crystal silicon film method for the present invention.As shown in Figure 1, step 1 provides a substrate, and forms one first silicon structure film on substrate.Wherein, the first silicon structure film can comprise the how combination in any of rice polycrystal silicon film, a polysilicon membrane or other silicon structure film or above-mentioned silicon structure film of an amorphous silicon membrane, a microcrystalline silicon film.Then, carry out step 2, the first silicon structure film is carried out a upgrading processing procedure to form a crystal seed layer, wherein the upgrading processing procedure comprises a hydrogen gas plasma processing procedure and a helium plasma process.In a preferred embodiment, the power parameter of hydrogen gas plasma processing procedure is between 61mW/cm
2To 366mW/cm
2, and the power parameter of helium plasma process is between 61mW/cm
2To 244mW/cm
2, but, can adjust power parameter according to the structure of the first silicon structure film not as limit.At last, step 3 directly forms one second silicon structure film (silicon metal) with the processing procedure identical with forming the first silicon structure film again on crystal seed layer.Wherein, the second silicon structure film can comprise the how combination in any of rice polycrystal silicon film, a polysilicon membrane or other silicon structure film or above-mentioned silicon structure film of a microcrystalline silicon film.In addition, it should be noted that the process parameter that wherein forms the first silicon structure film can be identical with the process parameter that forms the second silicon structure film.To be an amorphous silicon membrane with the first silicon structure film hereinafter, the second silicon structure film be the situation of a microcrystalline silicon film, utilizes a preferred embodiment to be specified.
Please refer to Fig. 2 to Fig. 5.Fig. 2 to Fig. 5 has illustrated the method schematic diagram of a preferred embodiment of the present invention formation microcrystalline silicon film.As shown in Figure 2, at first provide a substrate 10.In the present embodiment, substrate 10 comprises a glass substrate 101, and a dielectric layer 102 is positioned on the glass substrate 101.Wherein, what glass substrate 101 used is Coning 1737 glass substrates of 0.63mm thickness, but not as limit, visual successive process conditioned disjunction product application direction decision, the flexible base plate of for example resistant to elevated temperatures quartz or monocrystalline silicon substrate, deflection etc.And dielectric layer 102 can be a silicon nitride layer, and can be formed by processing procedures such as physical vapour deposition (PVD) or chemical vapour deposition (CVD)s, but its material or formation method be as limit, and can be individual layer that material constituted or composite layer that other is fit to, or other formation method that is fit to.
As shown in Figure 3, then on substrate 10, form an amorphous silicon membrane 12.In the present embodiment, amorphous silicon membrane 12 is that (plasma-enhanced CVD, PECVD) system feed silicomethane (SiH with plasma auxiliary chemical vapor deposition
4) and hydrogen (H
2) formed as reacting gas, but its formation method or reacting gas for example can use processing procedures such as physical vapour deposition (PVD) or chemical vapour deposition (CVD) to form, or increase other reacting gas not as limit.In addition, the visual actual demand adjustment of deposition parameter, for example demands such as sedimentation time, deposit thickness, deposition quality.For example the deposition parameter of present embodiment is as described below: the flow of silicomethane is substantially 20sccm, and the flow of hydrogen is substantially 200sccm, and deposition pressure is substantially 0.5Torr, and the long-pending power in Shen is substantially 61mW/cm
2, and process temperatures is between 150 ℃ to 280 ℃, the thickness of amorphous silicon membrane 12 approximately between
Extremely
Please refer to Fig. 4, and in the lump with reference to figure 3.Change the matter processing procedure on amorphous silicon membrane 12 (as shown in Figure 3), to form a crystal seed layer 14 (as shown in Figure 4), wherein the upgrading processing procedure comprises a hydrogen gas plasma processing procedure and a helium plasma process.In the present embodiment, use hydrogen gas plasma and helium plasma that amorphous silicon membrane 12 is handled, the processing power of its hydrogen gas plasma processing procedure is approximately between 61mW/cm
2To 366mW/cm
2, and the processing power of helium plasma process is approximately between 61mW/cm
2To 244mW/cm
2In addition, present embodiment is to feed hydrogen gas plasma and helium plasma simultaneously, but not as limit, for example can feed hydrogen gas plasma earlier, then feed the helium plasma again, or two orders conversely, just feed the helium plasma earlier, feed the helium plasma again, also or two plasma treatment times have partly overlapping etc. mode is carried out plasma process.What deserves to be explained is that the upgrading processing procedure is will remove by fragile bond or unsound nucleus in the film by the suitable bombardment of energy, reaches the control film and becomes nuclear structure, and then form crystal seed layer 14.Therefore, can comply with follow-up film growth demand, hydrogen gas plasma and helium plasma treatment power are adjusted, suitable crystal seed layer is provided.
As shown in Figure 5, on crystal seed layer 14, form a microcrystalline silicon film 16.In the present embodiment, microcrystalline silicon film 16 is with the plasma auxiliary chemical vapor deposition system, feed silicomethane and hydrogen and directly be formed on the crystal seed layer 14 as reacting gas, but not as limit.Same, can use other formation method or other reacting gas to form microcrystalline silicon film 16.In addition, demands such as the also visual sedimentation time of deposition parameter, deposit thickness, deposition quality are adjusted.For example the deposition parameter of present embodiment is as described below: the flow of silicomethane is substantially 20sccm, and the flow of hydrogen is substantially 200sccm, and deposition pressure is substantially 0.5Torr, and the long-pending power in Shen is substantially 61mW/cm
2, and process temperatures is between 150 ℃ to 280 ℃.It should be noted that the process parameter that forms microcrystalline silicon film 16 can be same as the process parameter that forms amorphous silicon membrane 12, promptly adopts identical process parameter as present embodiment.Yet the crystal seed layer 14 by through hydrogen gas plasma and helium plasma upgrading but can deposit the microcrystalline silicon film 16 of high crystalline texture with the process parameter of amorphous silicon membrane 12.Can find out thus, utilize hydrogen gas plasma and helium plasma to carry out surfaction, get involved control film coring situation, can reach lifting crystalline quality purpose at meagre amorphous silicon film.To remove by fragile bond or unsound nucleus in the film by the suitable bombardment of energy, and reach the control film and become nuclear structure and then can effectively improve percent crystallization in massecuite and shorten the processing procedure time.After processing formation crystal seed layer, on crystal seed layer, can deposit the microcrystalline silicon film of high crystalline volume again with same amorphous silicon parameter.In addition, forming microcrystalline silicon film 16 in the last deposition process can reach
And do not need extra vacuum breaker fabrication process, can reduce the unnecessary manufacturing cost.
In sum, the present invention forms the method for crystal silicon film, has the advantage of lower cost and better quality.Aspect cost, use general process gas under low temperature environment, to carry out (below 300 ℃), and subsequent deposition only need use the process parameter of amorphous silicon membrane can form microcrystalline silicon film, do not need extra vacuum breaker fabrication process in the deposition process simultaneously yet, therefore can be compatible with the production line of amorphous silicon processing procedure, significantly shorten the processing procedure time, reduce production cost, and then improve the rate of capacity utilization.Aspect quality, the present invention adopts and is different from traditional hydrogen dilution mode, but utilizes hydrogen gas plasma and helium plasma to carry out upgrading.In processing procedure, feed hydrogen and helium and have following three benefits, at first being that helium can help hydrogen to improve its dissociation efficiency, secondly is that helium can dissociate under low temperature environment and reduces the plasma process temperature, is that the many nucleation easily of helium ionic weight help the crystal silicon film deposition at last.Therefore, the present invention can significantly reduce depositing temperature, and obtains the silicon thin film of high crystalline quality.
In addition, the present invention also can increase its product range of application, for example thin-film transistor can be made on the deflection flexible base plate, is applicable to flat-panel screens or thin film solar cell related development and application.Be example wherein with the solar cell of two-layer storehouse type up and down, its wide energy silicon (1.7-1.8eV) amorphous silicon layer that sees through the upper strata is changed the short-wavelength visible light part in the solar spectrum, utilize the sunlight of narrow gap material (1.1-1.2eV) the microcrystal silicon layer absorption long wavelength near infrared spectrum of lower floor simultaneously, enlarge its absorbing wavelength zone, reach higher photoelectric conversion efficiency.And the present invention promptly can be applicable to the solar cell of this storehouse type, utilize two kinds of structures of identical process parameter growth amorphous silicon and microcrystal silicon, two structures can be formed down in same processing environment, not needing increases other fabrication steps in addition, thereby has effects such as the processing procedure time of shortening, reduction processing procedure cost.
The above only is preferred embodiment of the present invention, and all equalizations of being done according to claim scope of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (10)
1. a method that forms microcrystalline silicon film is characterized in that, comprising:
One substrate is provided, comprises an amorphous silicon membrane on this substrate;
This amorphous silicon membrane is carried out a upgrading processing procedure to form a crystal seed layer, and wherein this upgrading processing procedure comprises a hydrogen gas plasma processing procedure and a helium plasma process; And
On this crystal seed layer, form a microcrystalline silicon film.
2. the method for claim 1 is characterized in that, this amorphous silicon membrane/this microcrystalline silicon film is to utilize the long-pending processing procedure CVD in a chemical gaseous phase Shen to be formed.
3. method as claimed in claim 2 is characterized in that, this chemical vapor deposition process is a plasma assistant chemical vapor deposition processing procedure PECVD.
4. method as claimed in claim 3 is characterized in that, forms this amorphous silicon membrane/this microcrystalline silicon film and comprises that feeding hydrogen and silicomethane react, and the flow of silicomethane is substantially 20sccm, and the flow of hydrogen is substantially 200sccm.
5. method as claimed in claim 3 is characterized in that, a process temperatures that forms this amorphous silicon membrane/this microcrystalline silicon film is between 150 ℃ to 280 ℃.
6. the method for claim 1 is characterized in that, the thickness of this amorphous silicon membrane is between 10 dust to 200 dusts.
7. the method for claim 1 is characterized in that, the power parameter of this hydrogen gas plasma processing procedure is between 61mW/cm
2To 366mW/cm
2, and the power parameter of this helium plasma process is between 61mW/cm
2To 244mW/cm
2
8. a method that forms crystal silicon film is characterized in that, comprising:
One substrate is provided, comprises one first silicon structure film on this substrate;
This first silicon structure film is carried out a upgrading processing procedure to form a crystal seed layer, and wherein this upgrading processing procedure comprises a hydrogen gas plasma processing procedure and a helium plasma process; And
On this crystal seed layer, form one second silicon structure film.
9. method as claimed in claim 8 is characterized in that the power parameter of this hydrogen gas plasma processing procedure is between 61mW/cm
2To 366mW/cm
2, and the power parameter of this helium plasma process is between 61mW/cm
2To 244mW/cm
2
10. method as claimed in claim 8 is characterized in that, the process parameter that forms this first silicon structure film is identical with the process parameter that forms this second silicon structure film.
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| CN2009102606833A CN102103989A (en) | 2009-12-18 | 2009-12-18 | Method for forming crystal silicon film |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102492933A (en) * | 2011-12-16 | 2012-06-13 | 大连理工大学 | Two-step growth method for preparing microcrystalline silicon thin film without hatching layer |
| CN106653572A (en) * | 2016-12-27 | 2017-05-10 | 中国科学院宁波材料技术与工程研究所 | Preparation method of polycrystalline silicon film and photoelectric device |
| CN107425087A (en) * | 2015-11-26 | 2017-12-01 | 新奥光伏能源有限公司 | A kind of solar cell and its amorphous silicon hydride i film surface processing methods |
-
2009
- 2009-12-18 CN CN2009102606833A patent/CN102103989A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102492933A (en) * | 2011-12-16 | 2012-06-13 | 大连理工大学 | Two-step growth method for preparing microcrystalline silicon thin film without hatching layer |
| CN107425087A (en) * | 2015-11-26 | 2017-12-01 | 新奥光伏能源有限公司 | A kind of solar cell and its amorphous silicon hydride i film surface processing methods |
| CN107425087B (en) * | 2015-11-26 | 2019-09-03 | 新奥光伏能源有限公司 | A kind of solar battery and its amorphous silicon hydride i film surface processing method |
| CN106653572A (en) * | 2016-12-27 | 2017-05-10 | 中国科学院宁波材料技术与工程研究所 | Preparation method of polycrystalline silicon film and photoelectric device |
| CN106653572B (en) * | 2016-12-27 | 2020-01-17 | 中国科学院宁波材料技术与工程研究所 | Preparation method of polycrystalline silicon thin film and photoelectric device |
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Application publication date: 20110622 |