CN106653572A - Preparation method of polycrystalline silicon film and photoelectric device - Google Patents
Preparation method of polycrystalline silicon film and photoelectric device Download PDFInfo
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- CN106653572A CN106653572A CN201611227126.8A CN201611227126A CN106653572A CN 106653572 A CN106653572 A CN 106653572A CN 201611227126 A CN201611227126 A CN 201611227126A CN 106653572 A CN106653572 A CN 106653572A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 51
- 238000002360 preparation method Methods 0.000 title claims abstract description 34
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 52
- 238000000137 annealing Methods 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000001939 inductive effect Effects 0.000 claims abstract description 5
- 239000012528 membrane Substances 0.000 claims description 89
- 229920005591 polysilicon Polymers 0.000 claims description 46
- 239000007789 gas Substances 0.000 claims description 40
- 238000002425 crystallisation Methods 0.000 claims description 36
- 230000008025 crystallization Effects 0.000 claims description 34
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 239000010408 film Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000004936 stimulating effect Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000008246 gaseous mixture Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005842 biochemical reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007715 excimer laser crystallization Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
Abstract
The present invention provides a preparation method of a polycrystalline silicon film. The preparation method comprises a first step of providing an amorphous silicon film, and putting the amorphous silicon film on a water cooling sample table in a reaction room; a second step of inletting a plasma gas source into the reaction room, and adjusting the pressure of the reaction room to 100Pa-10000Pa; and a third step of stimulating the plasma gas source and generating plasma, annealing and crystallizing the amorphous silicon film in the plasma environment so as to obtain the polycrystalline silicon film. According to the preparation method, the amorphous silicon film is put in a radio frequency plasma environment generated through inductive coupling under medium pressure, so that the amorphous silicon film is annealed and crystalized rapidly to prepare the polycrystalline silicon film rapidly at low temperature. In the preparation method, common glass and other cheap substrates are used, so that the preparation costs are greatly reduced, further the time costs are greatly saved, and the method has the advantages of low cost, mass production and simple technology.
Description
Technical field
The present invention relates to semiconductor applications, the more particularly to a kind of preparation method and application of polysilicon membrane polysilicon
The photoelectric device of film.
Background technology
Polysilicon membrane gets more and more people's extensive concerning because of its good performance.In big matrix liquid crystal display field, greatly
Grain polycrystalline silicon thin film possesses the high mobility similar to monocrystalline silicon thin film, can be used for the field-effect crystalline substance of large area, quick response
The preparation of the photoelectric devices such as body pipe, sensor.In terms of solar cell, polysilicon membrane is not only to long-wave band light sensitive
By force, also there is higher absorption coefficient to visible ray；With with crystalline silicon identical stability, will not produce similar to non-crystalline silicon
Serious photo attenuation effect.
Existing polysilicon membrane preparation technology mainly includes chemical vapor deposition (CVD) and the class of non-crystalline silicon Annealing Crystallization two
Method.CVD technology prepares the polysilicon membrane of complete crystallization, and temperature is higher and harsher to the alternative condition of substrate, Ji Yaoyong
There is higher fusion temperature, have higher purity again to prevent substrate impurity from High temperature diffusion occurring.Non-crystalline silicon Annealing Crystallization side
Method mainly includes three kinds of solid phase crystallization method (SPC), metal-induced crystallization method (MIC) and excimer-Laser crystallization method (ELA).
SPC is that amorphous silicon membrane is placed in annealing furnace to be annealed, the polysilicon membrane epigranular of preparation, surfacing, cost
It is low, process is simple, but annealing time is longer, annealing in the case of 600 DEG C needs 20h.MIC is that one is added on the basis of SPC
Annealed again after layer metal or other salt films, crystallization temperature and crystallization time all decrease compared to SPC.Here
On the basis of using extra electric field crystallization temperature can be made to be reduced to 400 DEG C, crystallization time is reduced to 4 hours or so.But MIC is deposited
In the problem of metallic pollution, its extensive application is limited.ELC is irradiated to amorphous silicon surfaces and makes using high power pulse laser
It reaches fusion temperature within the extremely short time, so as to realize that liquid phase is recrystallized, although being industrially applied, but
Its apparatus expensive, large area produces poor repeatability and need to consider Cost Problems.
The content of the invention
Based on this, it is necessary to provide a kind of low temperature, the quick and low polysilicon membrane preparation technology of preparation cost and answer
With the photoelectric device of the polysilicon membrane.
A kind of preparation method of polysilicon membrane, comprises the following steps：
S1, there is provided amorphous silicon membrane, on the water-cooled sample stage that the amorphous silicon membrane is put in reative cell；
S2, is passed through plasma gas source in the reative cell, and by the pressure of the reative cell adjust to 100Pa to
10000Pa；
S3, excites the plasma gas source and produces plasma, in the plasma environment, the amorphous
There is Annealing Crystallization in silicon thin film, so as to obtain the polysilicon membrane.
Wherein in one embodiment, the thickness of the amorphous silicon membrane is 100nm～1 μm.
Wherein in one embodiment, in step S2, the plasma gas source includes argon gas and/or helium
Gas, the flow of the plasma gas source is 10-30slm.
Wherein in one embodiment, in step S2, the flow of the plasma gas source is 15-25slm,
And the pressure of the reative cell is adjusted to 200Pa to 1500Pa.
Wherein in one embodiment, in step S3, using inductive or direct-current arc mode by etc. from
Daughter spray gun produces the plasma, and added radio-frequency power supply power is 10-20kW, the plasma torch it is a diameter of
40-60mm, the amorphous silicon membrane is 20-60mm with the distance that the plasma torch is exported.
Wherein in one embodiment, the power of the radio-frequency power supply is 12～16kw.
Wherein in one embodiment, the plasma gas source also includes hydrogen, and the flow of the hydrogen is 0-
1.0slm。
Wherein in one embodiment, the flow of the hydrogen is 0.3～0.7slm.
Wherein in one embodiment, the amorphous silicon membrane is supported by substrate, is moved back in the amorphous silicon membrane
In fiery crystallization process, the substrate temperature is 300-700 DEG C, and the time needed for the amorphous silicon membrane Annealing Crystallization is 5-
30s。
A kind of photoelectric device, it is characterised in that the photoelectric device includes the system by described in any one of claim 1 to 9
Polysilicon membrane prepared by Preparation Method.
The present invention is placed in water-cooled sample by the way that amorphous silicon membrane is placed in the gas ions environment produced under the conditions of middle pressure
On platform so that the amorphous silicon membrane carries out short annealing crystallization, so as to quickly prepare polysilicon membrane under cryogenic；This
Invention so as to greatly reduce preparation cost, and not only can greatly be saved using inexpensive substrates such as simple glasses
Time cost, at the same also have overcast, large area prepare and process is simple advantage.
The principle of short annealing crystallization is in the present invention：In above-mentioned plasma environment, the temperature of plasma gas surpasses
2000 DEG C are crossed, and there is under optimal conditions very high H atom concentration.High energy of plasma enables to amorphous
Silicon thin film carries out short annealing；Due to using water-cooled sample stage, substrate being kept to realize under than relatively low temperature conditionss non-
The short annealing of crystal silicon film layer.Further, since there is the H of substantial amounts of atomic state in above-mentioned plasma environment, due to H atom
Chemical annealing effect, the presence of a large amount of H atoms can further promote the Annealing Crystallization of amorphous silicon membrane.The side of summary two
Face reason, it is possible to achieve the short annealing of amorphous silicon membrane；Further, since annealing time is shorter, after substrate itself is heated
Temperature will not be very high, add the use of water-cooled sample stage, can underlayer temperature control than relatively low level.
Description of the drawings
Fig. 1 is the flow chart of the preparation method of polysilicon membrane of the present invention；
Fig. 2 is the SEM figures of polysilicon membrane prepared by embodiment 1；
Fig. 3 is the TEM figures of polysilicon membrane prepared by embodiment 1；
Fig. 4 is the AFM test results of polysilicon membrane prepared by embodiment 1；
Fig. 5 is the Raman test results of polysilicon membrane prepared by embodiment 1；
Fig. 6 is the Raman test results of polysilicon membrane prepared by embodiment 3.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, by the following examples and with reference to attached
Figure, the present invention will be described in further detail.
Fig. 1 is referred to, the present invention provides a kind of preparation method of polysilicon membrane, comprises the following steps：
S1, there is provided amorphous silicon membrane, on the water-cooled sample stage that the amorphous silicon membrane is put in reative cell；
S2, is passed through plasma gas source in the reative cell, and controls the pressure of the reative cell to 100Pa extremely
10000Pa；
S3, excites the plasma gas source and produces plasma, in the plasma environment, the amorphous
There is Annealing Crystallization in silicon thin film, so as to obtain the polysilicon membrane.
In step sl, a substrate can be further provided for, for supporting the amorphous silicon membrane.The substrate can be pure
The higher silicon chip of degree, or common quartz glass.The amorphous silicon membrane first can be over the substrate deposited, then
The substrate that deposition has the amorphous silicon membrane is put in the reative cell.
The thickness of the amorphous silicon membrane can be 100nm～1 μm, and the amorphous silicon membrane is blocked up, the plasma
The Annealing Crystallization effect of the amorphous silicon membrane is deteriorated, the amorphous silicon membrane is excessively thin, easily by the plasma etching
Fall.
Before step S2, the step of vacuumizing to the reative cell can be further included, it is indoor to ensure the reaction
The content of vapor and foreign gas is kept low.Preferably, the background vacuum for making the reative cell is 10-3~
10-6Pa.It is further preferable that the background vacuum for making the reative cell is 10-5～10-6Pa。
In step s 2, the pressure of the reative cell is adjusted to 100Pa to 10000Pa, can be produced in step s3
The plasma of high-energy, high energy of plasma enables to amorphous silicon membrane and carries out short annealing.Further, since using
Water-cooled sample stage, can keep substrate to realize the short annealing of amorphous silicon membrane under than relatively low temperature conditionss, substrate it is low
Warm condition can make the range of choice of the substrate wider, even if the purity of the substrate (such as cheap glass) is not high, institute
Stating the impurity in substrate will not also occur High temperature diffusion, so greatly reduce the preparation cost of the polysilicon membrane, more have
Beneficial to its industrialization.
Preferably, the pressure of the reative cell can be adjusted to 200-1500Pa.It is further preferable that can be by the reative cell
Pressure adjust to 500-1000Pa.
Preferably, during the amorphous silicon membrane Annealing Crystallization, the substrate temperature is 300-700 DEG C.It is more excellent
Selection of land, during the amorphous silicon membrane Annealing Crystallization, the substrate temperature is 400-600 DEG C.
The plasma gas source is used to producing plasma and does not send out with the amorphous silicon membrane and polysilicon membrane
Biochemical reaction.The plasma gas source can include argon gas and/or at least one in helium.The plasma gas
The flow that is passed through in body source can be 10～30slm.Preferably, the flow that is passed through of the plasma gas source can be 15-
25slm。
The plasma gas source can further include hydrogen.It is former that the hydrogen can be decomposed into H in step S3
Son, H atom has facilitation to the crystallization of the amorphous silicon membrane, so as to during the preparation for further shortening the polysilicon membrane
Between.Preferably, the hydrogen is passed through flow less than 1.0slm, it is further preferable that the hydrogen be passed through flow for 0.3～
0.7slm。
In step s3, a rf electric field can be applied to the reative cell using radio-frequency power supply, it is described etc. so as to excite
Plasma gas source produces the plasma.Can be being produced by plasma torch using inductive or direct-current arc mode
Raw plasma.
The diameter of the plasma torch can be 40-60mm, the amorphous silicon membrane and the plasma torch
The distance of outlet can be 20-60mm.Preferably, the power setting of the radio-frequency power supply be 10～20kw, the radio-frequency power supply
Power it is bigger, the crystallization time of the amorphous silicon membrane is shorter, if however, the power of the radio-frequency power supply is excessive, can make
There is etching situation in the amorphous silicon membrane, so as to obtain complete polysilicon membrane.It is further preferable that the radio frequency electrical
The power setting in source is 12～16kw.
Preferably, the time needed for the amorphous silicon membrane Annealing Crystallization is 5-30s.It is further preferable that the non-crystalline silicon
Time needed for Thin-film anneal crystallization is 5-15s.
The principle of short annealing crystallization is in the present invention：In above-mentioned plasma environment, the temperature of plasma gas surpasses
2000 DEG C are crossed, and there is under optimal conditions very high H atom concentration.High energy of plasma enables to amorphous
Silicon thin film carries out short annealing；Due to using water-cooled sample stage, substrate being kept to realize under than relatively low temperature conditionss non-
The short annealing of crystal silicon film layer.Further, since there is the H of substantial amounts of atomic state in above-mentioned plasma environment, due to H atom
Chemical annealing effect, the presence of a large amount of H atoms can further promote the Annealing Crystallization of amorphous silicon membrane.The side of summary two
Face reason, it is possible to achieve the short annealing of amorphous silicon membrane；Further, since annealing time is shorter, after substrate itself is heated
Temperature will not be very high, add the use of water-cooled sample stage, can underlayer temperature control than relatively low level.
The present invention can also be by the control pressure, radio-frequency power supply power, annealing time, the flow of hydrogen etc. factor
To obtain microcrystalline silicon film, polysilicon membrane or its combination of different crystallization degrees.
The present invention further provides a kind of photoelectric device, including the polysilicon membrane prepared using above-mentioned preparation method.
Embodiment 1
In the 3cm × 3cm silicon chip substrates cleaned deposit one layer of 1 μ m-thick amorphous silicon membrane, take out sample and by its
On the water-cooled sample stage of middle pressure plasma CVD devices, sample stage height is adjusted, make substrate surface and plasma torch
Outlet distance is shut vacuum chamber and vacuum chamber is evacuated to into 10 in 30mm-5The background vacuum of Pa, closes connection molecule pump group
Slide valve between cavity simultaneously opens technique pump group and pressure-control valve, and it is the high-purity Ar of 20slm to be passed through flow, and is passed through
Adjusting pressure-control valve makes the pressure in vacuum room reach 800Pa, is passed through high-purity H that flow is 0.5slm2And open radio frequency electrical
Source, produces plasma, adjusts radio-frequency power supply power to 14kW, and annealing temperature is 552 DEG C, and annealing time is 7s.Annealing terminates
After close H2, close plasma electrical source, close Ar.
Embodiment 2
The present embodiment is substantially the same manner as Example 1, and difference is, substrate is quartz glass substrate, plasma gas
Body source is Ar and H2Mixed gas, the flow of plasma gas source is 10slm, and the chamber pressure of reative cell is 200Pa, is moved back
Fiery power is 16kW, and annealing time is 5s, and annealing temperature is 600 DEG C.
Embodiment 3
The present embodiment is substantially the same manner as Example 1, and difference is that plasma gas source is He and H2Gaseous mixture
Body, the flow of plasma gas source is 30slm, and film thickness is 200nm, and annealing time is 10s, and annealing temperature is 500 DEG C.
Embodiment 4
The present embodiment is substantially the same manner as Example 1, and difference is, plasma gas source is He, plasma gas
The flow in body source is 15slm, and film thickness is 500nm, and chamber pressure is adjusted to 1500Pa, substrate surface and plasma torch
The distance of outlet is 40mm, and annealing power is 18kW, H2Flow is 0.3slm, and annealing time is 8s, and annealing temperature is 700 DEG C.
Embodiment 5
The present embodiment is substantially the same manner as Example 1, and difference is, substrate used is 5cm × 5cm silicon chips, plasma
Gas source is Ar and H2Mixed gas, the flow of plasma gas source is 25slm, and chamber pressure is adjusted to 400Pa, is served as a contrast
Basal surface is 20mm with the distance of plasma torch outlet, and radio-frequency power supply power is 16kW, H2Flow is 0.7slm, during annealing
Between be 10s, annealing temperature be 643 DEG C.
Embodiment 6
The present embodiment is substantially the same manner as Example 5, and difference is only to be passed through the high-purity Ar of 21slm and be not passed through
H2, substrate surface is 60mm with the distance of plasma torch outlet, and radio-frequency power supply power is 15kW, and annealing time is 15s, is moved back
Fiery temperature is 593 DEG C.
Embodiment 7
The present embodiment is substantially the same manner as Example 1, and difference is that plasma gas source is Ar and H2Gaseous mixture
Body, the flow of plasma gas is 30slm, and chamber pressure is 1000Pa, H2Flow is 0.4slm, and annealing time is 25s, is moved back
Fiery temperature is 800 DEG C.
Table 1
Fig. 2 to Fig. 4 is referred to, it can be seen that the polysilicon membrane that preparation method provided by the present invention is obtained
With obvious grainiess, show that the amorphous silicon membrane there occurs crystallization, the surface roughness Ra of the polysilicon membrane
For 4.35nm.Peak value is located at 480cm in Fig. 5-1、510cm-1、520cm-1Amorphous composition, polycrystalline component and monocrystalline are represented respectively
Component, from fig. 5, it can be seen that the crystallization degree of the polysilicon membrane is very high；And the crystallization degree of Fig. 6 has then reached 100%.
Table 1 is the crystallization degree table of polysilicon membrane prepared by embodiment 1 to 7, as it can be seen from table 1 the present invention can be obtained in 30s
To the polysilicon membrane of complete crystallization, and the annealing temperature of the amorphous silicon membrane is very low.Additionally, hydrogen is to the non-crystalline silicon
The crystallization of film has facilitation, and under the flow condition of 0.3～0.7sml, its facilitation is most strong.
The polysilicon membrane preparation technology that the present invention is provided, by the way that amorphous silicon membrane is placed in into inductive under the conditions of middle pressure
In the radio frequency plasma environment of generation, so that amorphous silicon membrane rapid crystallization, and can quickly obtain under cryogenic
Polysilicon membrane, not only can greatly reduce preparation cost using inexpensive substrates such as simple glasses, and greatly save
Time cost, at the same also have overcast, large area prepare and process is simple advantage.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more concrete and detailed, but and
Can not therefore be construed as limiting the scope of the patent.It should be pointed out that for one of ordinary skill in the art comes
Say, without departing from the inventive concept of the premise, some deformations and improvement can also be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be defined by claims.
Claims (10)
1. a kind of preparation method of polysilicon membrane, comprises the following steps：
S1, there is provided amorphous silicon membrane, on the water-cooled sample stage that the amorphous silicon membrane is put in reative cell；
S2, is passed through plasma gas source in the reative cell, and by the pressure of the reative cell adjust to 100Pa to
10000Pa；
S3, excites the plasma gas source and produces plasma, and in the plasma environment, the non-crystalline silicon is thin
There is Annealing Crystallization in film, so as to obtain the polysilicon membrane.
2. the preparation method of polysilicon membrane according to claim 1, it is characterised in that the thickness of the amorphous silicon membrane
For 100nm～1 μm.
3. the preparation method of polysilicon membrane according to claim 1, it is characterised in that described in step S2
Plasma gas source includes argon gas and/or helium, and the flow that is passed through of the plasma gas source is 10-30slm.
4. the preparation method of polysilicon membrane according to claim 3, it is characterised in that described in step S2
The flow that is passed through of plasma gas source is 15-25slm, and the pressure of the reative cell is adjusted to 200Pa to 1500Pa.
5. the preparation method of polysilicon membrane according to claim 1, it is characterised in that in step S3, adopts
Inductive or direct-current arc mode produce the plasma by plasma torch, and added radio-frequency power supply power is 10-
20kW, a diameter of 40-60mm of the plasma torch, the amorphous silicon membrane and the plasma torch export away from
From for 20-60mm.
6. the preparation method of polysilicon membrane according to claim 5, it is characterised in that the power of the radio-frequency power supply is
12～16kw.
7. the preparation method of polysilicon membrane according to claim 3, it is characterised in that the plasma gas source is also
Including hydrogen, the flow that is passed through of the hydrogen is 0-1.0slm.
8. the preparation method of polysilicon membrane according to claim 7, it is characterised in that the flow that is passed through of the hydrogen is
0.3～0.7slm.
9. the preparation method of polysilicon membrane according to claim 1, it is characterised in that the amorphous silicon membrane is by lining
Bottom is supported, and during the amorphous silicon membrane Annealing Crystallization, the substrate temperature is 300-700 DEG C, the amorphous
Time needed for silicon thin film Annealing Crystallization is 5-30s.
10. a kind of photoelectric device, it is characterised in that the photoelectric device includes the preparation by described in any one of claim 1 to 9
Polysilicon membrane prepared by method.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110760925A (en) * | 2019-11-15 | 2020-02-07 | 常州时创能源科技有限公司 | Method for depositing amorphous silicon thin film by PECVD and application thereof |
| CN114864751A (en) * | 2022-05-19 | 2022-08-05 | 通威太阳能(眉山)有限公司 | Solar cell and preparation method thereof |
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| US20150077676A1 (en) * | 2006-09-29 | 2015-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| CN101414564A (en) * | 2008-11-24 | 2009-04-22 | 上海广电光电子有限公司 | Method for manufacturing low-temperature polycrystalline silicon film transistor |
| CN102103989A (en) * | 2009-12-18 | 2011-06-22 | 华映视讯（吴江）有限公司 | Method for forming crystal silicon film |
| CN104822219A (en) * | 2015-05-18 | 2015-08-05 | 京东方科技集团股份有限公司 | Plasma generator, annealing equipment, coating crystallization equipment, and annealing process |
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| CN110760925A (en) * | 2019-11-15 | 2020-02-07 | 常州时创能源科技有限公司 | Method for depositing amorphous silicon thin film by PECVD and application thereof |
| CN114864751A (en) * | 2022-05-19 | 2022-08-05 | 通威太阳能(眉山)有限公司 | Solar cell and preparation method thereof |
| CN114864751B (en) * | 2022-05-19 | 2023-07-07 | 通威太阳能(眉山)有限公司 | Solar cell and preparation method thereof |
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