CN113990980A - Preparation method of solar cell and solar cell - Google Patents
Preparation method of solar cell and solar cell Download PDFInfo
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- CN113990980A CN113990980A CN202010657102.6A CN202010657102A CN113990980A CN 113990980 A CN113990980 A CN 113990980A CN 202010657102 A CN202010657102 A CN 202010657102A CN 113990980 A CN113990980 A CN 113990980A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 38
- 239000010703 silicon Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 32
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 25
- -1 nitrogen ions Chemical class 0.000 claims abstract description 18
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 23
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 22
- 238000004140 cleaning Methods 0.000 claims description 11
- 239000012495 reaction gas Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910020080 NCl3 Inorganic materials 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 230000035484 reaction time Effects 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- VPCDQGACGWYTMC-UHFFFAOYSA-N nitrosyl chloride Chemical compound ClN=O VPCDQGACGWYTMC-UHFFFAOYSA-N 0.000 claims description 5
- 235000019392 nitrosyl chloride Nutrition 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 4
- 239000007888 film coating Substances 0.000 claims description 3
- 238000009501 film coating Methods 0.000 claims description 3
- 238000002161 passivation Methods 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 9
- 238000012423 maintenance Methods 0.000 abstract description 8
- 230000002035 prolonged effect Effects 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 229910021645 metal ion Inorganic materials 0.000 abstract description 4
- 150000002367 halogens Chemical class 0.000 abstract description 3
- 150000003839 salts Chemical class 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910018514 Al—O—N Inorganic materials 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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Abstract
The application provides a preparation method of a solar cell and the solar cell, the preparation method comprises the steps of preparing an alumina film layer through deposition on the back surface of a silicon substrate, and then adopting plasma to treat the alumina film layer, wherein the plasma comprises nitrogen ions and halogen ions, and then preparing the back surface film layer on one side of the alumina film layer, which deviates from the silicon substrate. The preparation method adopts plasma to treat the alumina film layer, so as to improve the passivation effect; the halogen ions can be combined with the metal ions to generate stable halogen metal salt, and the solar cell jig and the reaction chamber can be cleaned, so that the pollution of the solar cell is avoided, and the maintenance period of the equipment is prolonged.
Description
Technical Field
The application relates to the technical field of photovoltaic manufacturing, in particular to a solar cell and a preparation method thereof.
Background
The PERC cell effectively improves the cell efficiency by passivating the back surface of the cell, and has become a mainstream crystalline silicon solar cell product in recent years. The aluminum oxide film layer has good chemical passivation and field passivation effects on the P-type silicon substrate, is suitable for industrial scale production, and becomes a back passivation film layer structure mainly adopted by the conventional PERC battery.
The aluminum oxide film layer can be deposited by adopting a PECVD (plasma enhanced chemical vapor deposition) or ALD (atomic layer deposition) method, and in actual production, the back surface state of the silicon substrate can be improved through back surface polishing treatment so as to realize a better back surface passivation effect; and a silicon nitride film layer is deposited on the outer side of the aluminum oxide film layer to enhance the reflectivity of the back surface, play a better passivation effect and improve the efficiency of the battery. In addition, an annealing step is usually added after the aluminum oxide film layer grows, so that the negative charge density of the film layer is improved, and the surface state density of the film layer is also reduced; methods for treating aluminum oxide passivation layers with oxygen-containing gas mixtures to improve passivation and increase cell efficiency are also disclosed. How to further improve the performance of the aluminum oxide and the back passivation film layer and improve the battery conversion efficiency is still a technical problem which needs to be solved urgently in the industry.
Disclosure of Invention
The invention aims to provide a preparation method of a solar cell and the solar cell, which can improve the back passivation effect and improve the cell performance; the jig and the cavity can be cleaned, and the maintenance period is prolonged.
In order to achieve the above object, an embodiment of the present application provides a method for manufacturing a solar cell, which mainly includes:
depositing an alumina film layer on the back surface of the silicon substrate;
treating the alumina film layer by adopting plasma, wherein the plasma comprises nitrogen ions and halogen ions;
and preparing a back surface film layer on one side of the alumina film layer, which is far away from the silicon substrate.
As a further improvement of the embodiment of the application, the plasma is obtained by ionizing the reaction gas by adopting a tubular PECVD method.
As a further improvement of the embodiment of the application, in the step of processing the alumina film layer by adopting the plasma, the plasma discharge power is 2500W-8000W, the temperature is 300 ℃ -700 ℃, the reaction pressure is 1600-1900 mTorr, and the reaction time is 180 s-380 s.
As a further modification of the embodiments of the present applicationFurthermore, the reaction gas comprises a first type gas and a second type gas, and the first type gas comprises NF3、NCl3And NOCl.
As a further improvement of an embodiment of the present application, the second type of gas comprises N2O、NO、NO2、N2、NH3One or more of them.
As a further improvement of the embodiment of the application, in the step of processing the aluminum oxide film layer by adopting the plasma, the flow rate of the first type of gas is controlled to be 1000-2000 sccm, and the flow rate of the second type of gas is controlled to be 2000-8000 sccm.
As a further improvement of the embodiment of the application, the thickness of the aluminum oxide film layer is set to be 3-20 nm.
As a further improvement of the embodiment of the present application, the back surface film layer is provided as at least one of a silicon nitride film, a silicon oxide film, and a silicon oxynitride film.
As a further improvement of the embodiment of the application, the preparation method further comprises the steps of performing texturing, diffusion, edge etching and cleaning on the silicon substrate in sequence before preparing the alumina film layer;
and after the back surface film layer is prepared, sequentially performing front surface film coating, back surface laser grooving, printing and sintering to obtain the solar cell.
The embodiment of the application also provides a solar cell prepared by the preparation method.
The beneficial effect of this application is: by adopting the preparation method and the solar cell, after the aluminum oxide film layer is prepared on the back surface of the silicon substrate, the aluminum oxide film layer is treated by adopting plasma, so that the negative charge density of the aluminum oxide film layer is improved, and the nitrogen-containing ions can generate an Al-O-N compound with the aluminum oxide film layer, so that the passivation effect is improved; the halogen ions can be combined with the metal ions to generate stable halogen metal salt, and the solar cell jig and the reaction chamber can be cleaned, so that the pollution of the solar cell is avoided, and the cleaning and maintenance period of the equipment is prolonged.
Drawings
Fig. 1 is a schematic main flow diagram of a method for manufacturing a solar cell according to the present application.
Detailed Description
The present application will be described in detail below with reference to embodiments shown in the drawings. The present invention is not limited to the above embodiments, and structural, methodological, or functional changes made by one of ordinary skill in the art according to the present embodiments are included in the scope of the present invention.
Referring to fig. 1, the preparation method provided by the present application comprises:
providing a silicon substrate, and sequentially performing texturing, diffusion, edge etching and cleaning on the silicon substrate;
depositing an alumina film layer on the back surface of the silicon substrate;
treating the alumina film layer by adopting plasma, wherein the plasma comprises nitrogen ions and halogen ions;
preparing a back surface film layer on one side of the alumina film layer, which is far away from the silicon substrate;
and then carrying out front film coating, back laser grooving, printing and sintering on the silicon substrate to obtain the solar cell.
The silicon substrate is a P-type crystal silicon wafer; the texturing refers to that a textured suede structure is obtained on the surface of a silicon substrate through etching by an alkali solution or an acid solution, and light reflection is reduced; the diffusion means that PN junctions are prepared and formed on the silicon substrate; the edge etching refers to removing edge PN junctions and phosphorosilicate glass formed in the diffusion process, and the existing process scheme can be selected according to actual product requirements. The cleaning step includes polishing the back surface of the silicon substrate, cleaning with deionized water, and drying, and the edge etching and cleaning processes are usually performed by using an integrated apparatus.
The aluminum oxide film layer can be obtained by deposition through a PECVD method or an ALD method, and the thickness of the aluminum oxide film layer is set to be 3-20 nm. And then treating the alumina film layer by adopting plasma containing nitrogen ions and halogen ions, and specifically ionizing a given reaction gas by adopting a tubular PECVD method to obtain the corresponding plasma.
After the aluminum oxide film layer is treated by plasma, the negative charge density can be improved, and the nitrogen-containing ions can form an Al-O-N compound with the aluminum oxide film layer, so that the passivation effect is improved. Moreover, the halogen ions can be combined with metal ion impurities introduced in the actual production preparation process to generate stable halogen metal salt, so that the pollution of the metal ion impurities to the silicon substrate is reduced. Besides, the halogen ions can also clean the surfaces of the jig adopted by the silicon substrate and the inner wall of the cavity, so that the cleaning and maintenance period of the jig and equipment is prolonged, the maintenance cost is reduced, and the productivity is ensured.
In practical application, in the step of processing the alumina film layer by adopting the plasma, the plasma discharge power is 2500W-8000W, the total flow of the reaction gas is set to be 3000-10000 sccm, the temperature is 300-700 ℃, the reaction pressure is 1600-1900 mTorr, and the reaction time is 180 s-380 s.
The reaction gas comprises NF3、NCl3NOCl, i.e. by NF3、NCl3Ionization of NOCl gas to obtain corresponding F-Or Cl-. To save NF3、NCl3The NOCl gas dosage and the cost, the reaction gas is composed of a first type of gas and a second type of gas, and the first type of gas comprises NF3、NCl3At least one of, NOCl; the second type of gas comprises N2O、NO、NO2、N2、NH3One or more of them. In the step of processing the alumina film layer by adopting the plasma, the flow rate of the first type of gas is controlled to be 1000-2000 sccm, and the flow rate of the second type of gas is controlled to be 2000-8000 sccm.
The back surface film layer is provided with at least one of a silicon nitride film, a silicon oxide film and a silicon oxynitride film. The step of preparing the back surface film layer on the side of the aluminum oxide film layer, which is far away from the silicon substrate, specifically refers to depositing and preparing the silicon nitride film and/or the silicon oxide film and/or the silicon oxynitride film on the aluminum oxide film layer by using a PECVD method. SiH is generally used4And NH3As a reaction gas, andand generating a silicon nitride film as the back surface film layer by a PECVD method. Particularly, the preparation of the alumina film layer, the plasma treatment and the preparation of the back surface film layer all adopt a tubular PECVD method, in other words, the silicon substrate can complete the steps in the same process chamber, and the pollution and the fragments in the transfer process are reduced.
In order to obtain better passivation and back antireflection effects, the back surface film layer can be arranged to be of a two-layer or multi-layer film structure, and the back surface film layer can be realized by adjusting process parameters such as reaction gas flow, reaction time and temperature.
The front-side coating is to deposit and prepare an antireflection film layer on the front side of the silicon substrate, and the antireflection film layer is also composed of at least one of a silicon nitride film, a silicon oxide film and a silicon oxynitride film. In the actual preparation process, the corresponding film layer structure can be obtained by adjusting the process parameters such as the flow rate of the reaction gas, the reaction time, the temperature and the like, and the antireflection film layer can also be arranged into a two-layer or multi-layer structure.
Therefore, the back surface laser grooving is to etch the back surface film layer and the alumina film layer on the back surface of the silicon substrate by a set laser beam; and the printing is to print the conductive slurry on the surface of the silicon substrate according to a set electrode pattern, the electrode pattern printed on the back surface of the silicon substrate is matched with the back surface laser grooving pattern, and then the conductive slurry on the surface of the silicon substrate and the silicon substrate form stable ohmic contact through the sintering step.
The embodiment of the application also provides a solar cell prepared by the preparation method. To more clearly illustrate the technical solution of the present application, the solar cell of the present embodiment is compared with the solar cell of the comparative example by performance test, and the results are shown in the following table:
the embodiment and the comparative example adopt silicon substrates with the same specification, and the difference between the embodiment and the comparative example is that the comparative example solar cell does not adopt plasma to treat a corresponding alumina film layerAnd the other processes are kept consistent. In this example, NF was used3、N2O is respectively used as a first gas and a second gas, and the plasma discharge power is set to be 6000W and NF in the step of processing the alumina film layer by adopting plasma3、N2The O flow is set to 1000sccm and 6000sccm respectively, the temperature is 500 ℃, the reaction pressure is 1700mTorr, and the reaction time is 180 s.
Comparing the test results of the examples and the comparative examples, it can be seen that the open circuit voltage and the conversion efficiency of the solar cell after the pretreatment step are both significantly improved. Besides, the plasma can play an etching and cleaning role on the surface of the graphite boat and the inner wall of the quartz tube used for producing the solar cell through actual production verification, so that the cleaning and maintenance costs of the graphite boat and the quartz tube can be reduced and the productivity can be ensured on the premise of not influencing the performance of the solar cell.
In summary, according to the preparation method and the solar cell, after the aluminum oxide film layer is prepared, the aluminum oxide film layer is treated by the plasma containing the nitrogen ions and the halogen ions, so that the passivation effect of the aluminum oxide film layer can be improved, the pollution of metal impurity ions to the surface of the silicon substrate can be reduced, the jig and the reaction chamber used by the solar cell can be cleaned, the cleaning maintenance period is prolonged, the maintenance cost is reduced, and the productivity is ensured.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above list of details is only for the concrete description of the feasible embodiments of the present application, they are not intended to limit the scope of the present application, and all equivalent embodiments or modifications that do not depart from the technical spirit of the present application are intended to be included within the scope of the present application.
Claims (10)
1. A method for manufacturing a solar cell, comprising:
depositing an alumina film layer on the back surface of the silicon substrate;
treating the alumina film layer by adopting plasma, wherein the plasma comprises nitrogen ions and halogen ions;
and preparing a back surface film layer on one side of the alumina film layer, which is far away from the silicon substrate.
2. The method of claim 1, wherein: the plasma is obtained by ionizing reaction gas by adopting a tubular PECVD method.
3. The method of claim 2, wherein: in the step of treating the alumina film layer by adopting the plasma, the discharge power of the plasma is 2500W-8000W, the temperature is 300-700 ℃, the reaction pressure is 1600-1900 mTorr, and the reaction time is 180 s-380 s.
4. The production method according to claim 3, characterized in that: the reaction gas comprises a first gas and a second gas, and the first gas comprises NF3、NCl3And NOCl.
5. The method of claim 4, wherein: the second type of gas comprises N2O、NO、NO2、N2、NH3One or more of them.
6. The method of claim 5, wherein: in the step of processing the alumina film layer by adopting the plasma, the flow rate of the first type of gas is controlled to be 1000-2000 sccm, and the flow rate of the second type of gas is controlled to be 2000-8000 sccm.
7. The method of claim 1, wherein: the thickness of the aluminum oxide film layer is set to be 3-20 nm.
8. The method of claim 1, wherein: the back surface film layer is provided with at least one of a silicon nitride film, a silicon oxide film and a silicon oxynitride film.
9. The method of claim 1, wherein: the preparation method also comprises the steps of sequentially texturing, diffusing, etching the edge and cleaning the silicon substrate before preparing the alumina film layer;
and after the back surface film layer is prepared, sequentially performing front surface film coating, back surface laser grooving, printing and sintering to obtain the solar cell.
10. A solar cell, characterized by: the solar cell is manufactured by the manufacturing method according to any one of claims 1 to 9.
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