WO2017197811A1 - Double-sided monocrystalline silicon solar cell and manufacturing method thereof - Google Patents

Double-sided monocrystalline silicon solar cell and manufacturing method thereof Download PDF

Info

Publication number
WO2017197811A1
WO2017197811A1 PCT/CN2016/098553 CN2016098553W WO2017197811A1 WO 2017197811 A1 WO2017197811 A1 WO 2017197811A1 CN 2016098553 W CN2016098553 W CN 2016098553W WO 2017197811 A1 WO2017197811 A1 WO 2017197811A1
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
single crystal
crystal silicon
double
silicon substrate
Prior art date
Application number
PCT/CN2016/098553
Other languages
French (fr)
Chinese (zh)
Inventor
盛赟
Original Assignee
常州天合光能有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 常州天合光能有限公司 filed Critical 常州天合光能有限公司
Publication of WO2017197811A1 publication Critical patent/WO2017197811A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a solar cell and a preparation method thereof, in particular to a single crystal silicon double-sided solar cell and a preparation method thereof, and belongs to the technical field of solar cells.
  • the double-sided solar cell utilizes the front and back two light receiving surfaces to obtain a higher photocurrent density and greatly increase the power generation.
  • a photovoltaic system based on double-sided solar cells can achieve 10 to 30% power gain.
  • the double-sided solar cell structure includes: a front and back suede structure, a pn junction emitter, a passivation anti-reverse dielectric layer, and a front and back electrode.
  • the suede on the back side can effectively improve the absorption of the ground and ambient reflected light on the back side of the double-sided battery, and is an important structure of the double-sided solar cell.
  • the back side of the double-sided solar cell adopts a suede-like structure similar to that of the front surface, that is, the pyramids obtained by the texturing are closely distributed and overlap each other.
  • the present invention is directed to the above-mentioned technical problems existing in the prior art, and provides a single crystal silicon double-sided solar cell, which optimizes minority carrier surface load and optical absorption characteristics of a solar cell, and improves quantum conversion efficiency.
  • a method for preparing a single crystal silicon double-sided solar cell is provided to improve conversion efficiency and production efficiency of a solar cell.
  • a single crystal silicon double-sided solar cell sequentially forms a front pyramidal pile surface (101), a front side doped emitter junction (102), and a front passivation anti-reflection medium layer on the front side of the single crystal silicon substrate (100).
  • the front electrode (104) which sequentially forms a back pyramid-shaped suede (105) on the back surface of the single crystal silicon substrate, a back surface field (106), a back passivation anti-reverse dielectric layer (107), and a back surface electrode (108), wherein the back pyramidal pile surface (105) is a split pyramidal pile surface, and the pyramid structure (105a)
  • the single crystal silicon substrate is only partially covered, and the pyramid structure (105a) is dispersedly distributed on the silicon substrate, and the region covered by the pyramid structure (105a) accounts for 20% to 90% of the back silicon substrate.
  • the base length of the single pyramid structure (105a) is 1-7 ⁇ m.
  • the front passivation anti-reflection dielectric layer (103) and the back passivation anti-reflection dielectric layer (107) are respectively made of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, silicon carbide, amorphous silicon, Microcrystalline silicon, indium tin oxide or titanium oxide is a single layer film or a multilayer film composed of a material.
  • the front electrode (104) and the back electrode (108) are one or more metals of silver, aluminum, copper, nickel, titanium, tin, lead, cadmium, gold, zinc or alloys thereof.
  • a method for preparing a single crystal silicon double-sided solar cell for preparing the single crystal silicon double-sided solar cell includes the following steps:
  • S2 front side doping to form an emitter junction
  • step S4 the chemical agent used for preparing the backside separation pyramid topography by wet chemical method is sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide, nitric acid, phosphoric acid, hydrofluoric acid, ethanol, isopropanol or One or more aqueous solutions of ethylene glycol; the preparation temperature is 60 to 80 ° C, and the time is 10 to 900 seconds.
  • steps S2 and S3 may also be included: S2-1: depositing a barrier layer on the front side.
  • the method further comprises the following steps: S5-1: removing the front silicon oxide, the phosphosilicate glass and the back borosilicate glass using hydrofluoric acid.
  • the single crystal silicon double-sided solar cell of the invention reduces the surface area of the surface of the back surface of the solar cell by providing a separate pyramid-shaped suede on the back side of the battery, and significantly reduces the photo-generated minority carriers on the back surface.
  • Composite the long-wavelength light incident on the front surface increases in reflection on the back surface, the transmission is reduced, and is absorbed by the solar cell again; at the same time, the back surface is covered with the anti-reflective dielectric layer, and the optical reflection on the back surface is not significantly increased, thereby ensuring the optical absorption characteristics of the back surface. Therefore, by separating the pyramid topography structure on the back surface, the minority carrier surface recombination and optical absorption characteristics of the double-sided solar cell can be optimized, and the quantum conversion efficiency is improved.
  • the preparation method of the single crystal silicon double-sided solar cell of the invention only adds a wet chemical method to prepare the backside separation pyramid topography structure, and the process is relatively simple, and is suitable for low-cost, large-volume, stable industrial manufacturing.
  • FIG. 1 is a schematic structural view of a single crystal silicon double-sided solar cell of the present invention.
  • Figure 2 is a photomicrograph of a split pyramidal suede of the present invention.
  • 100 is a single crystal silicon substrate, 101 is a front pyramidal suede, 102 is a front doped emitter junction, 103 is a front passivation antireflection dielectric layer, 104 is a front electrode, and 105 is a back pyramidal suede, 105a
  • 106 is the back surface field
  • 107 is the back passivation anti-reverse dielectric layer
  • 108 is the back electrode
  • 109 is the area not covered by the pyramid structure; the corresponding product structure in the figure is only a schematic diagram, not drawn to scale.
  • This embodiment is a case where the present invention is applied to P-type single crystal silicon.
  • a front pyramidal pile surface 101, a front side phosphorus doped emitter junction 102, a front passivation anti-reflection dielectric layer 103, and a front surface electrode 104 are sequentially formed on the front surface of the P-type single crystal silicon substrate 100, in the P-type.
  • the back surface of the single crystal silicon substrate is sequentially formed with a back side separation type pyramidal pile surface 105, a boron doped back surface field 106 formed by back surface boron doping, a back passivation anti-reflection medium layer 107, and a back surface electrode 108, wherein, as shown in FIG.
  • the pyramid structure 105a only partially covers the single crystal silicon substrate, and the pyramid structure 105a is dispersedly distributed on the back surface of the single crystal silicon substrate, leaving some not covered by the pyramid structure. Area 109.
  • the area covered by the pyramid structure 105a accounts for 85% of the entire back surface silicon substrate, and the bottom side length of the single pyramid structure 105a is 5 ⁇ m;
  • the front passivation anti-reflection dielectric layer 103 is made of silicon nitride.
  • a back passivation anti-reflective dielectric layer 107 is a two-layer film made of aluminum oxide and silicon nitride, wherein the aluminum oxide film has a thickness of 20 to 30 nm and a silicon nitride film has a thickness of 50 to 70nm.
  • the front electrode 104 and the back electrode 108 are both silver gate electrodes.
  • Embodiment 1 differs from Embodiment 1 in that, in the back-separated pyramidal pile 105, the area covered by the pyramid structure 105a accounts for 50% of the entire back surface silicon substrate, and the bottom side length of the single pyramid structure 105a is 7 ⁇ m.
  • the front passivation anti-reflection dielectric layer 103 is a single-layer film made of silicon oxynitride having a film thickness of 70 to 80 nm; and the back passivation anti-reflective dielectric layer 107 is a two-layer film made of titanium oxide and silicon oxide, wherein The titanium oxide film has a thickness of 20 to 30 nm and a silicon oxide film thickness of 50 to 70 nm.
  • the front electrode 104 and the back electrode 108 are both copper electrodes.
  • This embodiment is a case where the present invention is applied to N-type single crystal silicon.
  • a front pyramidal pile surface 101, a front side boron doped emitter junction 102, a front passivation anti-reflection dielectric layer 103, and a front surface electrode 104 are sequentially formed on the front surface of the N-type single crystal silicon substrate 100.
  • the back surface of the single crystal silicon substrate is sequentially formed with a back surface separation type pyramidal surface 105, a phosphorus-doped back surface field 106 formed by back surface phosphorus doping, a back passivation anti-reflection dielectric layer 107, and a back surface electrode 108, wherein the back surface is separated
  • the pyramid structure 105a only partially covers the single crystal silicon substrate, the pyramid structure 105a is dispersedly distributed on the back surface of the single crystal silicon substrate, and the region covered by the pyramid structure 105a occupies the entire back silicon substrate. 30%, the base length of the single pyramid structure 105a is 2 ⁇ m.
  • the front passivation anti-reflective dielectric layer 103 is a two-layer film made of aluminum oxide and silicon nitride, wherein the aluminum oxide film is 20 to 30 nm thick and the silicon nitride film is 50 to 70 nm thick;
  • the passivation anti-reflection dielectric layer 107 is a single-layer film made of silicon nitride having a film thickness of 70 to 80 nm;
  • the front electrode 104 and the back surface electrode 108 are both silver gate electrodes.
  • Embodiment 3 differs from Embodiment 3 in that, in the back-separated pyramidal pile 105, the area covered by the pyramid structure 105a accounts for 65% of the entire back silicon substrate, and the bottom side length of the single pyramid structure 105a is 4 ⁇ m.
  • the front passivation anti-reflective dielectric layer 103 is a double made of indium tin oxide and amorphous silicon.
  • the back passivation anti-reflective dielectric layer 107 is a two-layer film made of indium tin oxide and amorphous silicon, wherein indium oxide The tin film is 60 to 80 nm thick and the amorphous silicon film is 5 to 20 nm thick; the front electrode 104 and the back electrode 108 are both silver electrodes.
  • a method for preparing a single crystal silicon double-sided solar cell which is used for preparing the P single crystal silicon double-sided solar cell described in Embodiment 1, comprising the following steps:
  • S1 Texturing on the surface of a single crystal silicon substrate: using an alkaline fluffing liquid containing sodium hydroxide and isopropyl alcohol at a temperature of 80 ° C, the surface of the p-type single crystal silicon substrate 100 is textured to form a front pyramid Forming the suede 101 while removing the silicon wafer to cut the damaged layer;
  • S2 front side doping forms an emitter junction: phosphorus doping is performed to form a front doped emitter junction 102, and phosphorus doping may be performed by a tube furnace diffusion of a phosphorus oxychloride source, ion implantation or diffusion of a phosphorus-containing impurity layer, diffusion.
  • the square resistance is 40 to 200 ⁇ / ⁇ ;
  • a front side deposition barrier layer a process barrier layer for depositing a silicon oxide film on the front side by PECVD, having a thickness of 50 to 300 nm;
  • boron doping is performed to form a back surface field 106, boron doping may be performed by a tube furnace diffusion of boron tribromide source, ion implantation or diffusion of a boron-containing impurity layer, diffusion The resistance is 60 to 200 ⁇ / ⁇ ;
  • S6 preparing a front side and a back passivation anti-reflection medium layer: a passivation anti-reflection dielectric layer 107 of a front side silicon nitride 103 and a back side aluminum oxide/silicon nitride layer prepared by PECVD; a front side silicon nitride thickness of 70 to 80 nm, back surface oxidation The thickness of the aluminum is 20 to 30 nm, and the thickness of the silicon nitride is 50 to 70 nm;
  • Silver-containing gate electrode electrodes 104 and 108 were prepared by screen printing on the front and back sides, respectively, and sintered at a high temperature, and the sintering temperature was 850 to 900 °C.
  • Example 2 The preparation method of Example 2 was referred to the production method of Example 1.
  • a method for preparing a single crystal silicon double-sided solar cell which is used for preparing the N single crystal silicon double-sided solar cell described in Embodiment 3, comprising the following steps:
  • S1 Texturing on the surface of a single crystal silicon substrate: using an alkaline fluffing liquid containing sodium hydroxide and isopropyl alcohol at a temperature of 80 ° C, the surface of the n-type single crystal silicon substrate 100 is textured to form a front velvet Surface morphology 101, while removing the silicon wafer to cut the damage layer;
  • S2 front side doping to form an emitter junction: boron doping is performed to form a front side boron doped emitter junction 102, and phosphorus doping may be performed by a tube furnace diffusion of boron tribromide source, ion implantation or diffusion of a boron-containing impurity layer.
  • the diffusion resistance is 60 to 200 ⁇ / ⁇ ;
  • a front side deposition barrier layer a process barrier layer for depositing a silicon oxide film on the front side by PECVD, having a thickness of 50 to 300 nm;
  • S5 back doping to form a back surface field: phosphorus doping is performed to form a back surface field 106, and phosphorus doping may be performed by a tube furnace diffusion of a phosphorus oxychloride source, ion implantation or diffusion of a phosphorus-containing impurity layer, and diffusion.
  • the resistance is 40 to 200 ⁇ / ⁇ ;
  • S5-1 using hydrofluoric acid to remove the front side silicon oxide, borosilicate glass and the back side of the phosphosilicate glass;
  • S6 preparing a front side and a back passivation anti-reflective medium layer: a front side alumina/silicon nitride, a passivation anti-reflective dielectric layer 107 of 103 and a back silicon nitride by PECVD; a front side alumina thickness of 20 to 30 nm, nitriding The thickness of the silicon is 50 to 70 nm; the thickness of the back silicon nitride is 70 to 80 nm;
  • Silver-containing gate electrode electrodes 104 and 108 were prepared by screen printing on the front and back sides, respectively, and sintered at a high temperature, and the sintering temperature was 850 to 900 °C.
  • Example 4 The preparation method of Example 4 was referred to the production method of Example 3.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention relates to the field of solar cell technology, and specifically, to a double-sided monocrystalline silicon solar cell having a front-side pyramid textured surface (101), a front-side doped emitter junction (102), a front-side anti-reflection passivation medium layer (103), and a front-side electrode (104), each being sequentially formed on a front side of a monocrystalline silicon substrate (100); and a back-side pyramid textured surface (105), a back surface field (106), a back-side anti-reflection passivation medium layer (107), and a back-side electrode (108), each being sequentially formed on a back side of the monocrystalline silicon substrate (100). The double-sided monocrystalline silicon solar cell is characterized in that: the back-side pyramid textured surface (105) is of a discrete type; pyramid structures (105a) only cover partially on the monocrystalline silicon substrate (100), and are distributed discretely on the monocrystalline silicon substrate; and the pyramid structures (105a) cover 20%-90% of an area of the back side of the silicon substrate. The double-sided monocrystalline silicon solar cell and a manufacturing method thereof can optimize surface recombination of minority carriers and optical absorption characteristics, increasing quantum conversion efficiency.

Description

一种单晶硅双面太阳电池及其制备方法Single crystal silicon double-sided solar cell and preparation method thereof 技术领域Technical field
本发明涉及一种太阳电池及其制备方法，尤其涉及一种单晶硅双面太阳电池及其制备方法，属于太阳电池技术领域。The invention relates to a solar cell and a preparation method thereof, in particular to a single crystal silicon double-sided solar cell and a preparation method thereof, and belongs to the technical field of solar cells.
背景技术Background technique
追求提高电池转换效率，同时降低甚至维持制造成本及是业界不断追求的目标和提高自身竞争力之所在。相对于单面受光的传统晶体硅太阳电池，双面太阳电池利用正、背两个受光面，可以获得更高的光电流密度，很大程度地提高发电功率。根据安装地面和环境，基于双面太阳电池的光伏发电系统可以获得10至30％的功率增益。The pursuit of improving battery conversion efficiency, while reducing or even maintaining manufacturing costs and is the industry's constant pursuit of goals and improve their competitiveness. Compared with the conventional crystalline silicon solar cell with single-sided light receiving, the double-sided solar cell utilizes the front and back two light receiving surfaces to obtain a higher photocurrent density and greatly increase the power generation. Depending on the installation floor and environment, a photovoltaic system based on double-sided solar cells can achieve 10 to 30% power gain.
双面太阳电池结构包括：正、背面的绒面形貌结构、pn结发射极、钝化减反介质层、正、背面电极等。其中，背面的绒面可以有效地提高地面和环境反射光在双面电池背面的吸收，是双面太阳电池的重要结构。目前双面太阳电池的背面都采用与正面类似的绒面形貌结构，即制绒获得的金字塔分布紧密，相互交叠。虽然这种紧密分布的金字塔有利于最大限度地吸收直射光，但不一定是漫反射光的最佳光吸收结构，并且较高的表面积会带来少数载流子复合。因此，双面太阳电池的背面结构有待进一步优化。The double-sided solar cell structure includes: a front and back suede structure, a pn junction emitter, a passivation anti-reverse dielectric layer, and a front and back electrode. Among them, the suede on the back side can effectively improve the absorption of the ground and ambient reflected light on the back side of the double-sided battery, and is an important structure of the double-sided solar cell. At present, the back side of the double-sided solar cell adopts a suede-like structure similar to that of the front surface, that is, the pyramids obtained by the texturing are closely distributed and overlap each other. Although this closely distributed pyramid facilitates the maximum absorption of direct light, it is not necessarily the optimal light absorbing structure for diffusely reflected light, and the higher surface area will result in minority carrier recombination. Therefore, the back structure of the double-sided solar cell needs to be further optimized.
发明内容Summary of the invention
本发明针对现有技术中存在的上述技术问题，提供一种单晶硅双面太阳电池，优化太阳电池少数载流子表面负荷和光学吸收特性，提高量子转换效率。The present invention is directed to the above-mentioned technical problems existing in the prior art, and provides a single crystal silicon double-sided solar cell, which optimizes minority carrier surface load and optical absorption characteristics of a solar cell, and improves quantum conversion efficiency.
本发明的另一方面，提供一种单晶硅双面太阳电池的制备方法，提高太阳电池的转换效率和生产效率。In another aspect of the present invention, a method for preparing a single crystal silicon double-sided solar cell is provided to improve conversion efficiency and production efficiency of a solar cell.
为此，本发明采用如下技术方案：To this end, the present invention adopts the following technical solutions:
一种单晶硅双面太阳电池，在单晶硅衬底(100)的正面依次形成正面金字塔形绒面(101)、正面掺杂发射结(102)、正面钝化减反介质层(103)以及正面电极(104)，在单晶硅衬底的背面依次形成背面金字塔形绒面(105)、 背表面场(106)、背面钝化减反介质层(107)以及背面电极(108)，其特征在于：所述背面金字塔形绒面(105)为分离型金字塔形绒面，金字塔结构(105a)仅部分地覆盖单晶硅衬底，金字塔结构(105a)分散地分布在硅衬底上，被金字塔结构(105a)覆盖的区域占背面硅衬底的20％-90％。A single crystal silicon double-sided solar cell sequentially forms a front pyramidal pile surface (101), a front side doped emitter junction (102), and a front passivation anti-reflection medium layer on the front side of the single crystal silicon substrate (100). And the front electrode (104), which sequentially forms a back pyramid-shaped suede (105) on the back surface of the single crystal silicon substrate, a back surface field (106), a back passivation anti-reverse dielectric layer (107), and a back surface electrode (108), wherein the back pyramidal pile surface (105) is a split pyramidal pile surface, and the pyramid structure (105a) The single crystal silicon substrate is only partially covered, and the pyramid structure (105a) is dispersedly distributed on the silicon substrate, and the region covered by the pyramid structure (105a) accounts for 20% to 90% of the back silicon substrate.
进一步地，单个金字塔结构(105a)的底边长是1-7μm。Further, the base length of the single pyramid structure (105a) is 1-7 μm.
进一步地，所述正面钝化减反介质层(103)和背面钝化减反介质层(107)分别为由氧化硅、氮化硅、氮氧化硅、氧化铝、碳化硅、非晶硅、微晶硅、氧化铟锡或者氧化钛为材料组成的单层膜或多层膜。Further, the front passivation anti-reflection dielectric layer (103) and the back passivation anti-reflection dielectric layer (107) are respectively made of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, silicon carbide, amorphous silicon, Microcrystalline silicon, indium tin oxide or titanium oxide is a single layer film or a multilayer film composed of a material.
进一步地，所述正面电极(104)、背面电极(108)为银、铝、铜、镍、钛、锡、铅、镉、金、锌的一种或多种金属或其合金。Further, the front electrode (104) and the back electrode (108) are one or more metals of silver, aluminum, copper, nickel, titanium, tin, lead, cadmium, gold, zinc or alloys thereof.
本发明的另一方面，提供一种单晶硅双面太阳电池的制备方法，用于制备所述单晶硅双面太阳电池，包括如下步骤：In another aspect of the present invention, a method for preparing a single crystal silicon double-sided solar cell for preparing the single crystal silicon double-sided solar cell includes the following steps:
S1：在单晶硅衬底表面制绒；S1: velvet on the surface of the single crystal silicon substrate;
S2：正面掺杂形成发射结；S2: front side doping to form an emitter junction;
S3：去除背面含杂质玻璃层；S3: removing the glass layer containing impurities on the back surface;
S4：湿化学法制备背面分离金字塔形貌结构，并去除背面掺杂层；S4: preparing a backside separation pyramid topography structure by a wet chemical method, and removing the back doped layer;
S5：背面掺杂形成背表面场；S5: doping the back surface to form a back surface field;
S6：制备正面、背面钝化减反介质层；S6: preparing a front and back passivation anti-reflection medium layer;
S7：制备正面、背面电极。S7: Preparation of front and back electrodes.
在步骤S4中，湿化学法制备背面分离金字塔形貌结构所采用的化学药剂有氢氧化钠、氢氧化钾、四甲基氢氧化铵、硝酸、磷酸、氢氟酸、乙醇、异丙醇或乙二醇中的一种或两种以上混合的水溶液；制备温度是60至80℃，时间是10-900秒。In step S4, the chemical agent used for preparing the backside separation pyramid topography by wet chemical method is sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide, nitric acid, phosphoric acid, hydrofluoric acid, ethanol, isopropanol or One or more aqueous solutions of ethylene glycol; the preparation temperature is 60 to 80 ° C, and the time is 10 to 900 seconds.
进一步地，在步骤S2和S3之间，还可以包括如下步骤：S2-1：正面沉积阻挡层。Further, between steps S2 and S3, the following steps may also be included: S2-1: depositing a barrier layer on the front side.
进一步地，在步骤S5和S6之间，还包括如下步骤：S5-1：使用氢氟酸去除正面的氧化硅、磷硅玻璃和背面的硼硅玻璃。Further, between steps S5 and S6, the method further comprises the following steps: S5-1: removing the front silicon oxide, the phosphosilicate glass and the back borosilicate glass using hydrofluoric acid.
本发明的单晶硅双面太阳电池，通过在电池的背面设置分离型金字塔形绒面，减少太阳电池背面绒面的表面积，明显地降低光生少数载流子在背表面的 复合；正面入射的长波长光在背表面的反射增加，透射减小，重新被太阳电池吸收；同时，背面覆有减反介质层，背面的光学反射没有明显增加，保证背面的光学吸收特性。因此，通过背面分离金字塔形貌结构，可以优化双面太阳电池的少数载流子表面复合和光学吸收特性，提高量子转换效率。The single crystal silicon double-sided solar cell of the invention reduces the surface area of the surface of the back surface of the solar cell by providing a separate pyramid-shaped suede on the back side of the battery, and significantly reduces the photo-generated minority carriers on the back surface. Composite; the long-wavelength light incident on the front surface increases in reflection on the back surface, the transmission is reduced, and is absorbed by the solar cell again; at the same time, the back surface is covered with the anti-reflective dielectric layer, and the optical reflection on the back surface is not significantly increased, thereby ensuring the optical absorption characteristics of the back surface. Therefore, by separating the pyramid topography structure on the back surface, the minority carrier surface recombination and optical absorption characteristics of the double-sided solar cell can be optimized, and the quantum conversion efficiency is improved.
本发明的单晶硅双面太阳电池的制备方法，仅仅增加一道湿化学方法制备背面分离金字塔形貌结构，工艺相对简单，适合于低成本、大批量、稳定的工业制造。The preparation method of the single crystal silicon double-sided solar cell of the invention only adds a wet chemical method to prepare the backside separation pyramid topography structure, and the process is relatively simple, and is suitable for low-cost, large-volume, stable industrial manufacturing.
附图概述BRIEF abstract
本发明的特征、性能由以下的实施例及其附图进一步描述。Features and capabilities of the present invention are further described by the following examples and the accompanying drawings.
图1为本发明的单晶硅双面太阳电池的结构示意图；1 is a schematic structural view of a single crystal silicon double-sided solar cell of the present invention;
图2为本发明的分离型金字塔形绒面的显微镜照片；Figure 2 is a photomicrograph of a split pyramidal suede of the present invention;
其中，100为单晶硅衬底，101为正面金字塔形绒面，102为正面掺杂发射结，103为正面钝化减反介质层，104为正面电极，105为背面金字塔形绒面，105a为金字塔结构，106为背表面场，107为背面钝化减反介质层，108为背面电极，109为未被金字塔结构覆盖的区域；图中相应的产品结构仅为示意图，未按比例绘制。Wherein, 100 is a single crystal silicon substrate, 101 is a front pyramidal suede, 102 is a front doped emitter junction, 103 is a front passivation antireflection dielectric layer, 104 is a front electrode, and 105 is a back pyramidal suede, 105a For the pyramid structure, 106 is the back surface field, 107 is the back passivation anti-reverse dielectric layer, 108 is the back electrode, and 109 is the area not covered by the pyramid structure; the corresponding product structure in the figure is only a schematic diagram, not drawn to scale.
本发明的较佳实施方式Preferred embodiment of the invention
为了使本技术领域的人员更好的理解本发明方案，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整的描述。The technical solutions in the embodiments of the present invention are clearly and completely described in the following with reference to the accompanying drawings in the embodiments of the present invention.
实施例1：Example 1:
本实施例是本发明应用于P型单晶硅的情形。如图1所示，在P型单晶硅衬底100的正面依次形成正面金字塔形绒面101、正面磷掺杂发射结102、正面钝化减反介质层103以及正面电极104，在P型单晶硅衬底的背面依次形成背面分离型金字塔形绒面105、背面硼掺杂形成的硼掺杂背表面场106、背面钝化减反介质层107以及背面电极108，其中，如图2所示，背面分离型金字塔形绒面105中，金字塔结构105a仅部分地覆盖单晶硅衬底，金字塔结构105a分散地分布在单晶硅衬底的背面，留下一些未被金字塔结构覆盖的区域109。 This embodiment is a case where the present invention is applied to P-type single crystal silicon. As shown in FIG. 1, a front pyramidal pile surface 101, a front side phosphorus doped emitter junction 102, a front passivation anti-reflection dielectric layer 103, and a front surface electrode 104 are sequentially formed on the front surface of the P-type single crystal silicon substrate 100, in the P-type. The back surface of the single crystal silicon substrate is sequentially formed with a back side separation type pyramidal pile surface 105, a boron doped back surface field 106 formed by back surface boron doping, a back passivation anti-reflection medium layer 107, and a back surface electrode 108, wherein, as shown in FIG. As shown, in the back-separated pyramidal pile 105, the pyramid structure 105a only partially covers the single crystal silicon substrate, and the pyramid structure 105a is dispersedly distributed on the back surface of the single crystal silicon substrate, leaving some not covered by the pyramid structure. Area 109.
在本实施例中，被金字塔结构105a覆盖的区域占整个背面硅衬底的85％，单个金字塔结构105a的底边长是5μm；正面钝化减反介质层103为由氮化硅制成的单层膜，膜厚70至80nm；背面钝化减反介质层107为由氧化铝和氮化硅制成的双层膜，其中，氧化铝膜厚20至30nm和氮化硅膜厚50至70nm。正面电极104和背面电极108均为银栅电极。In the present embodiment, the area covered by the pyramid structure 105a accounts for 85% of the entire back surface silicon substrate, and the bottom side length of the single pyramid structure 105a is 5 μm; the front passivation anti-reflection dielectric layer 103 is made of silicon nitride. a single layer film having a film thickness of 70 to 80 nm; a back passivation anti-reflective dielectric layer 107 is a two-layer film made of aluminum oxide and silicon nitride, wherein the aluminum oxide film has a thickness of 20 to 30 nm and a silicon nitride film has a thickness of 50 to 70nm. The front electrode 104 and the back electrode 108 are both silver gate electrodes.
实施例2：Example 2:
本实施例与实施例1的不同之处在于：背面分离型金字塔形绒面105中，被金字塔结构105a覆盖的区域占整个背面硅衬底的50％，单个金字塔结构105a的底边长是7μm。正面钝化减反介质层103为由氮氧化硅制成的单层膜，膜厚70至80nm；背面钝化减反介质层107为由氧化钛和氧化硅制成的双层膜，其中，氧化钛膜厚20至30nm和氧化硅膜厚50至70nm。正面电极104和背面电极108均为铜电极。This embodiment differs from Embodiment 1 in that, in the back-separated pyramidal pile 105, the area covered by the pyramid structure 105a accounts for 50% of the entire back surface silicon substrate, and the bottom side length of the single pyramid structure 105a is 7 μm. . The front passivation anti-reflection dielectric layer 103 is a single-layer film made of silicon oxynitride having a film thickness of 70 to 80 nm; and the back passivation anti-reflective dielectric layer 107 is a two-layer film made of titanium oxide and silicon oxide, wherein The titanium oxide film has a thickness of 20 to 30 nm and a silicon oxide film thickness of 50 to 70 nm. The front electrode 104 and the back electrode 108 are both copper electrodes.
实施例3：Example 3:
本实施例是本发明应用于N型单晶硅的情形。如图1所示，在N型单晶硅衬底100的正面依次形成正面金字塔形绒面101、正面掺硼掺杂发射结102、正面钝化减反介质层103以及正面电极104，在N型单晶硅衬底的背面依次形成背面分离型金字塔形绒面105、背面磷掺杂形成的磷掺杂背表面场106、背面钝化减反介质层107以及背面电极108，其中，背面分离型金字塔形绒面105中，金字塔结构105a仅部分地覆盖单晶硅衬底，金字塔结构105a分散地分布在单晶硅衬底的背面，被金字塔结构105a覆盖的区域占整个背面硅衬底的30％，单个金字塔结构105a的底边长是2μm。This embodiment is a case where the present invention is applied to N-type single crystal silicon. As shown in FIG. 1, a front pyramidal pile surface 101, a front side boron doped emitter junction 102, a front passivation anti-reflection dielectric layer 103, and a front surface electrode 104 are sequentially formed on the front surface of the N-type single crystal silicon substrate 100. The back surface of the single crystal silicon substrate is sequentially formed with a back surface separation type pyramidal surface 105, a phosphorus-doped back surface field 106 formed by back surface phosphorus doping, a back passivation anti-reflection dielectric layer 107, and a back surface electrode 108, wherein the back surface is separated In the pyramidal surface 105, the pyramid structure 105a only partially covers the single crystal silicon substrate, the pyramid structure 105a is dispersedly distributed on the back surface of the single crystal silicon substrate, and the region covered by the pyramid structure 105a occupies the entire back silicon substrate. 30%, the base length of the single pyramid structure 105a is 2 μm.
在本实施例中，正面钝化减反介质层103为由由氧化铝和氮化硅制成的双层膜，其中，氧化铝膜厚20至30nm和氮化硅膜厚50至70nm；背面钝化减反介质层107为氮化硅制成的单层膜，膜厚70至80nm；正面电极104和背面电极108均为银栅电极。In the present embodiment, the front passivation anti-reflective dielectric layer 103 is a two-layer film made of aluminum oxide and silicon nitride, wherein the aluminum oxide film is 20 to 30 nm thick and the silicon nitride film is 50 to 70 nm thick; The passivation anti-reflection dielectric layer 107 is a single-layer film made of silicon nitride having a film thickness of 70 to 80 nm; the front electrode 104 and the back surface electrode 108 are both silver gate electrodes.
实施例4：Example 4:
本实施例与实施例3的不同之处在于：背面分离型金字塔形绒面105中，被金字塔结构105a覆盖的区域占整个背面硅衬底的65％，单个金字塔结构105a的底边长是4μm。正面钝化减反介质层103为由由氧化铟锡和非晶硅制成的双 层膜，其中，氧化铟锡膜厚60至80nm和非晶硅膜厚5至20nm；背面钝化减反介质层107为氧化铟锡和非晶硅制成的双层膜，其中，氧化铟锡膜厚60至80nm和非晶硅膜厚5至20nm；正面电极104和背面电极108均为银电极。This embodiment differs from Embodiment 3 in that, in the back-separated pyramidal pile 105, the area covered by the pyramid structure 105a accounts for 65% of the entire back silicon substrate, and the bottom side length of the single pyramid structure 105a is 4 μm. . The front passivation anti-reflective dielectric layer 103 is a double made of indium tin oxide and amorphous silicon. a film, wherein the indium tin oxide film is 60 to 80 nm thick and the amorphous silicon film is 5 to 20 nm thick; the back passivation anti-reflective dielectric layer 107 is a two-layer film made of indium tin oxide and amorphous silicon, wherein indium oxide The tin film is 60 to 80 nm thick and the amorphous silicon film is 5 to 20 nm thick; the front electrode 104 and the back electrode 108 are both silver electrodes.
实施例5：Example 5:
一种单晶硅双面太阳电池的制备方法，用于制备实施例1所述的P单晶硅双面太阳电池，包括如下步骤：A method for preparing a single crystal silicon double-sided solar cell, which is used for preparing the P single crystal silicon double-sided solar cell described in Embodiment 1, comprising the following steps:
S1：在单晶硅衬底表面制绒：使用含氢氧化钠和异丙醇的碱性制绒液，温度是80℃，对p型单晶硅衬底100表面进行制绒，形成正面金字塔形绒面101，同时去除硅片切割损伤层；S1: Texturing on the surface of a single crystal silicon substrate: using an alkaline fluffing liquid containing sodium hydroxide and isopropyl alcohol at a temperature of 80 ° C, the surface of the p-type single crystal silicon substrate 100 is textured to form a front pyramid Forming the suede 101 while removing the silicon wafer to cut the damaged layer;
S2：正面掺杂形成发射结：进行磷掺杂形成正面掺杂发射结102，磷掺杂可以采用三氯氧磷源的管式炉扩散、离子注入或涂覆含磷杂质层的扩散，扩散方阻是40至200Ω/□；S2: front side doping forms an emitter junction: phosphorus doping is performed to form a front doped emitter junction 102, and phosphorus doping may be performed by a tube furnace diffusion of a phosphorus oxychloride source, ion implantation or diffusion of a phosphorus-containing impurity layer, diffusion. The square resistance is 40 to 200 Ω / □;
S2-1：正面沉积阻挡层：采用PECVD在正面沉淀氧化硅薄膜的工艺阻挡层，厚度是50至300nm；S2-1: a front side deposition barrier layer: a process barrier layer for depositing a silicon oxide film on the front side by PECVD, having a thickness of 50 to 300 nm;
S3：去除背面含杂质玻璃层：使用氢氟酸去除背面的磷硅玻璃层；S3: removing the impurity-containing glass layer on the back surface: removing the phosphorous silicon glass layer on the back side using hydrofluoric acid;
S4：湿化学法制备背面分离型金字塔形绒面，并去除背面掺杂：使用含四甲基氢氧化铵和异丙醇的碱性药液，温度是80℃，时间是10至900s，制备形成背面分离型金字塔形绒面105，同时去除背面磷掺杂层；S4: Preparation of back-separated pyramidal suede by wet chemical method and removal of back doping: using an alkaline solution containing tetramethylammonium hydroxide and isopropanol at a temperature of 80 ° C for 10 to 900 s, preparation Forming a backside separated pyramidal pile 105 while removing the backside phosphorus doped layer;
S5：背面掺杂形成背表面场：进行硼掺杂形成背表面场106，硼掺杂可以采用三溴化硼源的管式炉扩散、离子注入或涂覆含硼杂质层的扩散，扩散方阻是60至200Ω/□；S5: back doping to form a back surface field: boron doping is performed to form a back surface field 106, boron doping may be performed by a tube furnace diffusion of boron tribromide source, ion implantation or diffusion of a boron-containing impurity layer, diffusion The resistance is 60 to 200 Ω / □;
S5-1：使用氢氟酸去除正面的氧化硅、磷硅玻璃和背面的硼硅玻璃；S5-1: removing the front silicon oxide, the phosphosilicate glass, and the borosilicate glass on the back side using hydrofluoric acid;
S6：制备正面、背面钝化减反介质层：采用PECVD制备正面氮化硅103和背面氧化铝/氮化硅的钝化减反介质层107；正面氮化硅厚度是70至80nm，背面氧化铝厚度是20至30nm，氮化硅厚度是50至70nm；S6: preparing a front side and a back passivation anti-reflection medium layer: a passivation anti-reflection dielectric layer 107 of a front side silicon nitride 103 and a back side aluminum oxide/silicon nitride layer prepared by PECVD; a front side silicon nitride thickness of 70 to 80 nm, back surface oxidation The thickness of the aluminum is 20 to 30 nm, and the thickness of the silicon nitride is 50 to 70 nm;
S7：制备正、背面电极：采用丝网印刷分别在正、背面制备含银栅线电极104和108，并进行高温烧结，烧结温度是850至900℃。S7: Preparation of front and back electrodes: Silver-containing gate electrode electrodes 104 and 108 were prepared by screen printing on the front and back sides, respectively, and sintered at a high temperature, and the sintering temperature was 850 to 900 °C.
实施例2的制备方法参照实施例1的制备方法。The preparation method of Example 2 was referred to the production method of Example 1.
实施例6： Example 6
一种单晶硅双面太阳电池的制备方法，用于制备实施例3所述的N单晶硅双面太阳电池，包括如下步骤：A method for preparing a single crystal silicon double-sided solar cell, which is used for preparing the N single crystal silicon double-sided solar cell described in Embodiment 3, comprising the following steps:
S1：在单晶硅衬底表面制绒：使用含氢氧化钠和异丙醇的碱性制绒液，温度是80℃，对n型单晶硅衬底100表面进行制绒，形成正面绒面形貌101，同时去除硅片切割损伤层；S1: Texturing on the surface of a single crystal silicon substrate: using an alkaline fluffing liquid containing sodium hydroxide and isopropyl alcohol at a temperature of 80 ° C, the surface of the n-type single crystal silicon substrate 100 is textured to form a front velvet Surface morphology 101, while removing the silicon wafer to cut the damage layer;
S2：正面掺杂形成发射结：进行硼掺杂形成正面硼掺杂发射结102，磷掺杂可以采用三溴化硼源的管式炉扩散、离子注入或涂覆含硼杂质层的扩散，扩散方阻是60至200Ω/□；S2: front side doping to form an emitter junction: boron doping is performed to form a front side boron doped emitter junction 102, and phosphorus doping may be performed by a tube furnace diffusion of boron tribromide source, ion implantation or diffusion of a boron-containing impurity layer. The diffusion resistance is 60 to 200 Ω/□;
S2-1：正面沉积阻挡层：采用PECVD在正面沉淀氧化硅薄膜的工艺阻挡层，厚度是50至300nm；S2-1: a front side deposition barrier layer: a process barrier layer for depositing a silicon oxide film on the front side by PECVD, having a thickness of 50 to 300 nm;
S3：去除背面含杂质玻璃层：使用氢氟酸去除背面的硼硅玻璃层；S3: removing the impurity-containing glass layer on the back surface: removing the borosilicate glass layer on the back side using hydrofluoric acid;
S4：湿化学法制备背面分离型金字塔形绒面，并去除背面掺杂：使用含四甲基氢氧化铵和异丙醇的碱性药液，温度是80℃，时间是10至900s，制备背面金字塔形绒面105，同时去除背面硼掺杂层；S4: Preparation of back-separated pyramidal suede by wet chemical method and removal of back doping: using an alkaline solution containing tetramethylammonium hydroxide and isopropanol at a temperature of 80 ° C for 10 to 900 s, preparation a pyramidal fleece 105 on the back side, while removing the back boron doped layer;
S5：背面掺杂形成背表面场：进行磷掺杂形成背表面场106，磷掺杂可以采用三氯氧磷源的管式炉扩散、离子注入或涂覆含磷杂质层的扩散，扩散方阻是40至200Ω/□；S5: back doping to form a back surface field: phosphorus doping is performed to form a back surface field 106, and phosphorus doping may be performed by a tube furnace diffusion of a phosphorus oxychloride source, ion implantation or diffusion of a phosphorus-containing impurity layer, and diffusion. The resistance is 40 to 200 Ω / □;
S5-1：使用氢氟酸去除正面的氧化硅、硼硅玻璃和背面的磷硅玻璃；S5-1: using hydrofluoric acid to remove the front side silicon oxide, borosilicate glass and the back side of the phosphosilicate glass;
S6：制备正面、背面钝化减反介质层：采用PECVD制备正面氧化铝/氮化硅,103和背面氮化硅的钝化减反介质层107；正面氧化铝厚度是20至30nm，氮化硅厚度是50至70nm；背面氮化硅厚度是70至80nm；S6: preparing a front side and a back passivation anti-reflective medium layer: a front side alumina/silicon nitride, a passivation anti-reflective dielectric layer 107 of 103 and a back silicon nitride by PECVD; a front side alumina thickness of 20 to 30 nm, nitriding The thickness of the silicon is 50 to 70 nm; the thickness of the back silicon nitride is 70 to 80 nm;
S7：制备正、背面电极：采用丝网印刷分别在正、背面制备含银栅线电极104和108，并进行高温烧结，烧结温度是850至900℃。S7: Preparation of front and back electrodes: Silver-containing gate electrode electrodes 104 and 108 were prepared by screen printing on the front and back sides, respectively, and sintered at a high temperature, and the sintering temperature was 850 to 900 °C.
实施例4的制备方法参照实施例3的制备方法。The preparation method of Example 4 was referred to the production method of Example 3.
显然，所描述的实施例仅仅是本发明的部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都应当属于本发明保护的范围。 It is apparent that the described embodiments are only partial embodiments of the invention, and not all of the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts shall fall within the scope of the present invention.

Claims (8)

  1. 一种单晶硅双面太阳电池，在单晶硅衬底(100)的正面依次形成正面金字塔形绒面(101)、正面掺杂发射结(102)、正面钝化减反介质层(103)以及正面电极(104)，在单晶硅衬底的背面依次形成背面金字塔形绒面(105)、背表面场(106)、背面钝化减反介质层(107)以及背面电极(108)，其特征在于：所述背面金字塔形绒面(105)为分离型金字塔形绒面，金字塔结构(105a)仅部分地覆盖单晶硅衬底，金字塔结构(105a)分散地分布在硅衬底上，被金字塔结构(105a)覆盖的区域占背面硅衬底的20％-90％。A single crystal silicon double-sided solar cell sequentially forms a front pyramidal pile surface (101), a front side doped emitter junction (102), and a front passivation anti-reflection medium layer on the front side of the single crystal silicon substrate (100). And a front electrode (104), which sequentially forms a back pyramid-shaped pile surface (105), a back surface field (106), a back passivation anti-reflection medium layer (107), and a back surface electrode (108) on the back surface of the single crystal silicon substrate. The feature is that the back pyramidal pile surface (105) is a split pyramidal pile surface, the pyramid structure (105a) only partially covers the single crystal silicon substrate, and the pyramid structure (105a) is dispersedly distributed on the silicon substrate. Above, the area covered by the pyramid structure (105a) accounts for 20%-90% of the backside silicon substrate.
  2. 根据权利要求1所述的单晶硅双面太阳电池，其特征在于：单个金字塔结构(105a)的底边长是1-7μm。The single crystal silicon double-sided solar cell according to claim 1, wherein a single pyramid structure (105a) has a base length of 1 to 7 μm.
  3. 根据权利要求1所述的单晶硅双面太阳电池，其特征在于：所述正面钝化减反介质层(103)和背面钝化减反介质层(107)分别为由氧化硅、氮化硅、氮氧化硅、氧化铝、碳化硅、非晶硅、微晶硅、氧化铟锡或者氧化钛为材料组成的单层膜或多层膜。The single crystal silicon double-sided solar cell according to claim 1, wherein the front passivation anti-reflection dielectric layer (103) and the back passivation anti-reflection dielectric layer (107) are respectively silicon oxide and nitrided. A single-layer film or a multilayer film composed of silicon, silicon oxynitride, aluminum oxide, silicon carbide, amorphous silicon, microcrystalline silicon, indium tin oxide or titanium oxide.
  4. 根据权利要求1所述的单晶硅双面太阳电池，其特征在于：所述正面电极(104)、背面电极(108)为银、铝、铜、镍、钛、锡、铅、镉、金、锌的一种或多种金属或其合金。The single crystal silicon double-sided solar cell according to claim 1, wherein the front electrode (104) and the back electrode (108) are silver, aluminum, copper, nickel, titanium, tin, lead, cadmium, gold. One or more metals or alloys of zinc.
  5. 一种单晶硅双面太阳电池的制备方法，用于制备权利要求1-4任一所述单晶硅双面太阳电池，包括如下步骤：A method for preparing a single crystal silicon double-sided solar cell, which is used for preparing the single crystal silicon double-sided solar cell according to any one of claims 1 to 4, comprising the following steps:
    S1：在单晶硅衬底表面制绒；S1: velvet on the surface of the single crystal silicon substrate;
    S2：正面掺杂形成发射结；S2: front side doping to form an emitter junction;
    S3：去除背面含杂质玻璃层；S3: removing the glass layer containing impurities on the back surface;
    S4：湿化学法制备背面分离金字塔形貌结构，并去除背面掺杂层；S4: preparing a backside separation pyramid topography structure by a wet chemical method, and removing the back doped layer;
    S5：背面掺杂形成背表面场；S5: doping the back surface to form a back surface field;
    S6：制备正面、背面钝化减反介质层；S6: preparing a front and back passivation anti-reflection medium layer;
    S7：制备正面、背面电极。S7: Preparation of front and back electrodes.
  6. 根据权利要求5所述的单晶硅双面太阳电池的制备方法，其特征在于：在步骤S4中，湿化学法制备背面分离金字塔形貌结构所采用的化学药剂有氢氧化钠、 氢氧化钾、四甲基氢氧化铵、硝酸、磷酸、氢氟酸、乙醇、异丙醇或乙二醇中的一种或两种以上混合的水溶液；制备温度是60至80℃，时间是10-900秒。The method for preparing a single crystal silicon double-sided solar cell according to claim 5, wherein in the step S4, the chemical agent used for preparing the backside separation pyramid topography by wet chemical method has sodium hydroxide, An aqueous solution in which one or more of potassium hydroxide, tetramethylammonium hydroxide, nitric acid, phosphoric acid, hydrofluoric acid, ethanol, isopropanol or ethylene glycol are mixed; the preparation temperature is 60 to 80 ° C, and the time is 10-900 seconds.
  7. 根据权利要求5所述的单晶硅双面太阳电池的制备方法，其特征在于：在步骤S2和S3之间，还包括如下步骤：The method for preparing a single crystal silicon double-sided solar cell according to claim 5, further comprising the steps of: between steps S2 and S3:
    S2-1：正面沉积阻挡层：采用PECVD在正面沉淀氧化硅薄膜的工艺阻挡层，厚度是50至300nm。S2-1: Front side deposition barrier layer: A process barrier layer for depositing a silicon oxide film on the front side by PECVD, having a thickness of 50 to 300 nm.
  8. 根据权利要求5所述的单晶硅双面太阳电池的制备方法，其特征在于：在步骤S5和S6之间，还包括如下步骤：The method for preparing a single crystal silicon double-sided solar cell according to claim 5, further comprising the steps of: between steps S5 and S6:
    S5-1：使用氢氟酸去除正面的氧化硅、磷硅玻璃和背面的硼硅玻璃。 S5-1: The front side of the silicon oxide, the phosphosilicate glass, and the borosilicate glass on the back side are removed using hydrofluoric acid.
PCT/CN2016/098553 2016-05-17 2016-09-09 Double-sided monocrystalline silicon solar cell and manufacturing method thereof WO2017197811A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610331351.X 2016-05-17
CN201610331351.XA CN105826405A (en) 2016-05-17 2016-05-17 Mono-crystalline silicon double-sided solar cell and preparation method thereof

Publications (1)

Publication Number Publication Date
WO2017197811A1 true WO2017197811A1 (en) 2017-11-23

Family

ID=56530894

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/098553 WO2017197811A1 (en) 2016-05-17 2016-09-09 Double-sided monocrystalline silicon solar cell and manufacturing method thereof

Country Status (2)

Country Link
CN (1) CN105826405A (en)
WO (1) WO2017197811A1 (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108336176A (en) * 2018-03-12 2018-07-27 南昌大学 A kind of Si bases local emitter double-side solar cell structure
CN109950352A (en) * 2019-04-23 2019-06-28 通威太阳能（成都）有限公司 A kind of solar cell and its manufacturing method using amorphous silicon passivation layer
CN109980022A (en) * 2019-04-24 2019-07-05 通威太阳能（成都）有限公司 A kind of p-type tunneling oxide passivation contact solar cell and preparation method thereof
CN112038438A (en) * 2019-06-04 2020-12-04 盐城阿特斯协鑫阳光电力科技有限公司 Lightly doped substrate, substrate with selective emitter, solar cell and preparation method and application of solar cell
CN112349816A (en) * 2020-11-19 2021-02-09 江苏大学 Preparation method of high-efficiency low-cost N-type TOPCon battery based on PECVD technology
CN112599636A (en) * 2020-12-07 2021-04-02 浙江晶科能源有限公司 Preparation method of crystalline silicon solar cell and crystalline silicon solar cell
CN112993079A (en) * 2019-12-02 2021-06-18 阜宁阿特斯阳光电力科技有限公司 Preparation method of photovoltaic cell and photovoltaic cell
CN113078232A (en) * 2019-12-17 2021-07-06 苏州阿特斯阳光电力科技有限公司 N-type battery structure and preparation method thereof
CN113990980A (en) * 2020-07-09 2022-01-28 嘉兴阿特斯技术研究院有限公司 Preparation method of solar cell and solar cell
CN114447156A (en) * 2022-01-27 2022-05-06 环晟光伏(江苏)有限公司 Laser grooving method suitable for front surface of electroplated battery piece
CN114649438A (en) * 2020-12-17 2022-06-21 浙江爱旭太阳能科技有限公司 Preparation method of N-type HIBC solar cell
US20230079826A1 (en) * 2021-09-14 2023-03-16 Zhejiang Jinko Solar Co., Ltd. Solar cell, method for manufacturing solar cell, and photovoltaic module
CN116435403A (en) * 2023-02-28 2023-07-14 中国科学院上海微系统与信息技术研究所 Flexible monocrystalline silicon piece, flexible solar cell and preparation method of flexible monocrystalline silicon piece and flexible solar cell
CN118382310A (en) * 2024-06-21 2024-07-23 淮安捷泰新能源科技有限公司 Perovskite/silicon laminated solar cell and preparation method thereof

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105826405A (en) * 2016-05-17 2016-08-03 常州天合光能有限公司 Mono-crystalline silicon double-sided solar cell and preparation method thereof
CN106952974B (en) * 2017-03-31 2019-06-11 浙江晶科能源有限公司 A kind of preparation method of the black silicon double-side cell of p-type
CN107887453B (en) * 2017-10-10 2019-03-15 横店集团东磁股份有限公司 A kind of two-sided aluminium oxide p-type PERC solar battery and production method
CN108336156A (en) * 2018-03-12 2018-07-27 南昌大学 A kind of crystal silicon double-side solar cell structure with HAC-D features
CN108461553A (en) * 2018-03-12 2018-08-28 南昌大学 A kind of double-side solar cell structure with local amorphous silicon/crystalline silicon heterojunction characteristic
CN108336157A (en) * 2018-03-12 2018-07-27 南昌大学 A kind of double-side solar cell structure of local amorphous silicon emitter crystalline silicon back surface field
CN108336155A (en) * 2018-03-12 2018-07-27 南昌大学 A kind of HAC-D crystal silicon double-side solar cell structure
CN109638103A (en) * 2018-06-05 2019-04-16 中智(泰兴)电力科技有限公司 Monocrystalline silicon heterojunction solar cell two sides differentiation suede structure and preparation method
CN108807565B (en) * 2018-07-13 2024-04-16 苏州太阳井新能源有限公司 Passivation contact electrode structure, solar cell applicable to passivation contact electrode structure and manufacturing method of passivation contact electrode structure
CN109346535A (en) * 2018-09-14 2019-02-15 江苏林洋光伏科技有限公司 The method that laser prepares silicon solar cell selectivity flannelette and emitter
CN110071183A (en) * 2019-05-10 2019-07-30 苏州腾晖光伏技术有限公司 A kind of solar battery and preparation method thereof
CN112635591A (en) * 2020-12-22 2021-04-09 泰州隆基乐叶光伏科技有限公司 Preparation method of solar cell and solar cell
CN115528121A (en) 2021-08-04 2022-12-27 上海晶科绿能企业管理有限公司 Solar cell and photovoltaic module
US11843071B2 (en) 2021-08-04 2023-12-12 Shanghai Jinko Green Energy Enterprise Management Co., Ltd. Solar cell, manufacturing method thereof, and photovoltaic module
CN114678446B (en) * 2022-03-25 2024-07-12 江苏润阳世纪光伏科技有限公司 Low-cost contact passivation all-back electrode solar cell and preparation method thereof
CN117153925A (en) * 2022-07-27 2023-12-01 浙江晶科能源有限公司 Solar cell and photovoltaic module
CN116504877A (en) * 2023-05-08 2023-07-28 安徽华晟新能源科技有限公司 Heterojunction battery and preparation method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103489951A (en) * 2013-09-05 2014-01-01 西南科技大学 Efficient double-faced black crystalline silicon solar cell
KR20140110230A (en) * 2013-03-06 2014-09-17 엘지전자 주식회사 Solar cell and method for manufacturing the same
CN104350607A (en) * 2012-06-13 2015-02-11 三菱电机株式会社 Solar cell and method for manufacturing same
CN204315603U (en) * 2014-10-30 2015-05-06 广东爱康太阳能科技有限公司 A kind of polished backside crystal silicon solar batteries
CN105047742A (en) * 2015-09-07 2015-11-11 中国东方电气集团有限公司 Double-sided N-type crystalline silicon cell and preparation method thereof
CN105826405A (en) * 2016-05-17 2016-08-03 常州天合光能有限公司 Mono-crystalline silicon double-sided solar cell and preparation method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7842596B2 (en) * 2007-05-07 2010-11-30 Georgia Tech Research Corporation Method for formation of high quality back contact with screen-printed local back surface field

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104350607A (en) * 2012-06-13 2015-02-11 三菱电机株式会社 Solar cell and method for manufacturing same
KR20140110230A (en) * 2013-03-06 2014-09-17 엘지전자 주식회사 Solar cell and method for manufacturing the same
CN103489951A (en) * 2013-09-05 2014-01-01 西南科技大学 Efficient double-faced black crystalline silicon solar cell
CN204315603U (en) * 2014-10-30 2015-05-06 广东爱康太阳能科技有限公司 A kind of polished backside crystal silicon solar batteries
CN105047742A (en) * 2015-09-07 2015-11-11 中国东方电气集团有限公司 Double-sided N-type crystalline silicon cell and preparation method thereof
CN105826405A (en) * 2016-05-17 2016-08-03 常州天合光能有限公司 Mono-crystalline silicon double-sided solar cell and preparation method thereof

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108336176A (en) * 2018-03-12 2018-07-27 南昌大学 A kind of Si bases local emitter double-side solar cell structure
CN109950352A (en) * 2019-04-23 2019-06-28 通威太阳能（成都）有限公司 A kind of solar cell and its manufacturing method using amorphous silicon passivation layer
CN109980022A (en) * 2019-04-24 2019-07-05 通威太阳能（成都）有限公司 A kind of p-type tunneling oxide passivation contact solar cell and preparation method thereof
CN112038438A (en) * 2019-06-04 2020-12-04 盐城阿特斯协鑫阳光电力科技有限公司 Lightly doped substrate, substrate with selective emitter, solar cell and preparation method and application of solar cell
CN112993079A (en) * 2019-12-02 2021-06-18 阜宁阿特斯阳光电力科技有限公司 Preparation method of photovoltaic cell and photovoltaic cell
CN113078232A (en) * 2019-12-17 2021-07-06 苏州阿特斯阳光电力科技有限公司 N-type battery structure and preparation method thereof
CN113990980A (en) * 2020-07-09 2022-01-28 嘉兴阿特斯技术研究院有限公司 Preparation method of solar cell and solar cell
CN112349816A (en) * 2020-11-19 2021-02-09 江苏大学 Preparation method of high-efficiency low-cost N-type TOPCon battery based on PECVD technology
CN112349816B (en) * 2020-11-19 2022-05-17 江苏大学 Preparation method of high-efficiency low-cost N-type TOPCon battery based on PECVD technology
CN112599636A (en) * 2020-12-07 2021-04-02 浙江晶科能源有限公司 Preparation method of crystalline silicon solar cell and crystalline silicon solar cell
CN112599636B (en) * 2020-12-07 2023-08-01 浙江晶科能源有限公司 Preparation method of crystalline silicon solar cell and crystalline silicon solar cell
CN114649438A (en) * 2020-12-17 2022-06-21 浙江爱旭太阳能科技有限公司 Preparation method of N-type HIBC solar cell
CN114649438B (en) * 2020-12-17 2024-05-10 浙江爱旭太阳能科技有限公司 Preparation method of N-type HIBC solar cell
US20230079826A1 (en) * 2021-09-14 2023-03-16 Zhejiang Jinko Solar Co., Ltd. Solar cell, method for manufacturing solar cell, and photovoltaic module
CN114447156A (en) * 2022-01-27 2022-05-06 环晟光伏(江苏)有限公司 Laser grooving method suitable for front surface of electroplated battery piece
CN116435403A (en) * 2023-02-28 2023-07-14 中国科学院上海微系统与信息技术研究所 Flexible monocrystalline silicon piece, flexible solar cell and preparation method of flexible monocrystalline silicon piece and flexible solar cell
CN118382310A (en) * 2024-06-21 2024-07-23 淮安捷泰新能源科技有限公司 Perovskite/silicon laminated solar cell and preparation method thereof

Also Published As

Publication number Publication date
CN105826405A (en) 2016-08-03

Similar Documents

Publication Publication Date Title
WO2017197811A1 (en) Double-sided monocrystalline silicon solar cell and manufacturing method thereof
KR101000064B1 (en) Hetero-junction silicon solar cell and fabrication method thereof
US10084107B2 (en) Transparent conducting oxide for photovoltaic devices
US20150040975A1 (en) Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design
CN105826411B (en) Monocrystalline silicon double-side solar cell and preparation method thereof
CN210926046U (en) Solar cell
EP4293729A1 (en) Method for preparing solar cell and solar cell, photovoltaic module
US20130157404A1 (en) Double-sided heterojunction solar cell based on thin epitaxial silicon
WO2023093604A1 (en) Solar cell and preparation method for solar cell
WO2024000399A1 (en) Solar cell structure and manufacturing method therefor
CN217306521U (en) Solar cell and photovoltaic module
CN112951927A (en) Preparation method of solar cell
TWM527159U (en) Heterojunction solar cell
WO2022062381A1 (en) Stacked cell structure and manufacturing method therefor
CN111524982A (en) Solar cell
CN110660883A (en) Preparation method of solar cell and solar cell
US20230361227A1 (en) Laminated passivation structure of solar cell and preparation method thereof
CN114582983A (en) Heterojunction solar cell and preparation method thereof
CN114050105A (en) TopCon battery preparation method
CN217306520U (en) Solar cell and photovoltaic module
CN116093191A (en) Solar cell and photovoltaic module
CN205900558U (en) Monocrystalline silicon double -faced solar cell
WO2022156102A1 (en) Solar cell stack passivation structure and preparation method therefor
CN111403534B (en) Solar cell and preparation method thereof
TWI686958B (en) Solar cell and method of fabricating the same

Legal Events

Date Code Title Description
NENP Non-entry into the national phase

Ref country code: DE

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16902191

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 16902191

Country of ref document: EP

Kind code of ref document: A1