CN109638103A - Monocrystalline silicon heterojunction solar cell two sides differentiation suede structure and preparation method - Google Patents
Monocrystalline silicon heterojunction solar cell two sides differentiation suede structure and preparation method Download PDFInfo
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- CN109638103A CN109638103A CN201811590959.XA CN201811590959A CN109638103A CN 109638103 A CN109638103 A CN 109638103A CN 201811590959 A CN201811590959 A CN 201811590959A CN 109638103 A CN109638103 A CN 109638103A
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- 230000004069 differentiation Effects 0.000 title claims abstract description 29
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 39
- 239000010703 silicon Substances 0.000 claims abstract description 39
- 235000008216 herbs Nutrition 0.000 claims abstract description 21
- 210000002268 wool Anatomy 0.000 claims abstract description 21
- 238000004140 cleaning Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 9
- 238000005498 polishing Methods 0.000 claims abstract description 9
- 238000001035 drying Methods 0.000 claims abstract description 6
- 230000001590 oxidative effect Effects 0.000 claims abstract description 5
- 230000008569 process Effects 0.000 claims abstract description 5
- 239000000126 substance Substances 0.000 claims abstract description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 4
- 150000007529 inorganic bases Chemical class 0.000 claims description 4
- 150000007530 organic bases Chemical class 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 238000006701 autoxidation reaction Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000005215 recombination Methods 0.000 abstract description 5
- 230000006798 recombination Effects 0.000 abstract description 5
- 230000009467 reduction Effects 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of monocrystalline silicon heterojunction solar cell two sides differentiation suede structures, it is characterized by: the side to light of silicon wafer structure is different with shady face structure, the side to light is pyramid suede structure, and the shady face is the pyramid suede structure that burnishing surface or size are greater than side to light.Overall process uses Chained cleaning machine making herbs into wool mode, is performed etching using the method for wet-chemical chamber to shady face after groove type etching, realizes the increase or polishing of pyramid suede structure, then carries out RCA cleaning, HF removes natural oxidizing layer and slow lifting, drying.Side to light and shady face suede structure are designed respectively for the difference of two-sided entering light characteristic, and solve the problems, such as the manufacturing of the suede structure of differentiation, a kind of simplified technique is provided, it can effectively save reduction subsequent production cost, the recombination loss for taking into account back surface, short circuit current.
Description
Technical field
The present invention relates to area of solar cell, specifically a kind of monocrystalline silicon heterojunction solar cell two sides differentiation
Suede structure and preparation method.
Background technique
It is crucial to be known as next-generation extensive industrialization by photovoltaic industry for monocrystalline silicon heterojunction solar cell high conversion efficiency
One of technology.The big advantage of the one of monocrystalline silicon heterojunction solar cell is that its generating electricity on two sides characteristic is very good, is a kind of ideal double
Face solar cell.In practical applications, the entering light characteristic on two surfaces of solar cell is different: as main side to light,
Based on direct light, available standards solar spectrum indicates entering light characteristic, and most strong light intensity concentrates on yellowish green optical band；As backlight
Face, entering light characteristic is based on reflected light and scattering light, and entering light characteristic cannot be indicated with standard solar spectrum, and according to the sun
Its different entering light characteristic of battery applications environment also can be different.And monocrystalline silicon heterojunction solar cell is that two sides structure is in design
According to the design of standard solar spectrum, this causes it as double-side solar cell in application, being unable to reach in the actual environment most
Excellent state.The reason of leading to this situation there are one be exactly such solar cell during the preparation process, cleaning and texturing
Step is the groove type etching cleaning method used, this method in the suede structure that silicon wafer two sides is formed be it is the same, can not shape
At the construction of differentiation, the preparation process for also resulting in its subsequent CVD, PVD certainly has to matched, is unable to reach double
The optimization film layer structure of face solar cell configures.
In addition to the above-mentioned anti-reflective effect to incident light is unable to reach optimized design, the higher specific surface of shady face
Product also will cause the big problem of recombination-rate surface, can reduce the open-circuit voltage of heterojunction solar battery；Large specific surface area can also
It causes to need to consume more TCO and amorphous silicon material, and increases the process time.
Summary of the invention
The object of the invention is to the suede structures to silicon wafer two sides to carry out differentiation design, for two-sided entering light characteristic
Difference is designed side to light and shady face suede structure respectively, and the manufacturing for solving the suede structure of differentiation is asked
Topic provides a kind of simplified technique, can effectively save reduction subsequent production cost, the recombination loss for taking into account back surface, short circuit current
Monocrystalline silicon heterojunction solar cell two sides differentiation suede structure.
The technical solution adopted by the present invention is that: 1, a kind of monocrystalline silicon heterojunction solar cell two sides differentiation flannelette knot
Structure, it is characterised in that: the side to light of silicon wafer structure is different with shady face structure, and the side to light is pyramid suede structure, institute
Stating shady face is the pyramid suede structure that burnishing surface or size are greater than side to light.
1-3 μm of size of the side to light pyramid suede structure.
1-3 μm of size of the side to light pyramid suede structure；5-10 μm of size of the shady face pyramid suede structure.
A kind of preparation method of monocrystalline silicon heterojunction solar cell two sides differentiation suede structure, it is characterised in that: silicon
The making herbs into wool of two sides differentiation flannelette is completed on the two sides of piece in different making herbs into wool sections, removes nature oxygen then in turn through RCA cleaning, HF
Change layer and removes moisture, drying.
Overall process uses Chained cleaning machine making herbs into wool mode, and the method after groove type etching using wet-chemical chamber is to shady face
It performs etching, realizes the increase or polishing of pyramid suede structure, then carry out RCA cleaning, HF removes natural oxidizing layer and slow
Lifting, drying.
Silicon wafer is polished using inorganic base, inorganic base is dense potassium hydroxide or sodium hydroxide.
Silicon wafer is polished using organic base, organic base is tetramethylammonium hydroxide.
Silicon wafer is polished using mixed acid, mixed acid is the mixed solution of hydrofluoric acid and nitric acid.
Using the different Chained cleaning machine rinse bath of continuous built-in two temperature, alkali concentration, flocking additives to silicon wafer
Carry out the making herbs into wool of differentiation flannelette, temperature, alkali concentration, flocking additive；Differentiation flannelette making herbs into wool is using conventional alkali making herbs into wool.
The invention has the advantages that
1, reduce the specific surface area of shady face, to reduce material utilization amount consumed by subsequent CVD and PVD deposition.Excellent
In the case where selecting polished backside, ~ 20% amorphous silicon and the dosage of TCO can be saved, thus also save for ~ 20% process time,
Improve production capacity.
2, reduce the specific surface area of shady face, to reduce the recombination loss of back surface, open-circuit voltage can be increased, and
A small amount of short circuit current for improving solar cell.
The side to light emphasis of silicon wafer of the present invention takes the anti-reflective effect of solar cell into account, and silicon chip surface uses 1-3 μm small ruler
The suede structure of very little pyramid structure；The open-circuit voltage that the shady face emphasis of silicon wafer looks after solar cell is promoted, using 5-10 μm
Large scale pyramid or polishing structure reduce the surface area of silicon chip surface, reduce Carrier recombination probability, improve open circuit electricity
Pressure.And the consumption of CVD sections and PVD sections of raw material can be saved in the subsequent preparation process of monocrystalline silicon heterojunction solar cell, at most
About 23% can be saved.
Detailed description of the invention
Fig. 1 is one structural schematic diagram of the embodiment of the present invention；
Fig. 2 is two structural schematic diagram of the embodiment of the present invention.
In figure: silicon wafer 1, pyramidion suede structure 2, Great Pyramid suede structure 3, burnishing surface 4.
Specific embodiment
Below in conjunction with drawings and examples, the invention will be further described.
Embodiment illustrated in fig. 1 one: a kind of monocrystalline silicon heterojunction solar cell two sides differentiation suede structure, silicon wafer 1
Side to light and shady face structure it is different, side to light is pyramidion structure 2, and shady face is Great Pyramid suede structure 3, little Jin
1-3 μm of 2 size of word tower suede structure；5-10 μm of 3 size of Great Pyramid suede structure.
Its preparation step are as follows: the monocrystalline silicon piece for being 2 Ω ㎝ for resistivity carries out pre- clear in chain type cleaning and texturing machine
It washes, carries out making herbs into wool subsequently into etching groove, alkali making herbs into wool, the silicon wafer in first slot are carried out to silicon wafer using continuous slot
Upper and lower surfaces are submerged in solution, and silicon wafer obtains the suede structure that two surface pyramid sizes are 2.2 microns；?
In two slots, silicon wafer only has lower surface to be immersed in Woolen-making liquid, and the lower surface of silicon wafer obtains secondary making herbs into wool effect, obtains flannelette
8.0 microns of pyramid size；Then RCA cleaning is carried out, HF removes natural oxidizing layer, dries.The silicon wafer shady face obtained in this way exists
Pyramidion suede structure during CVD deposition and PVD deposition compared to side to light can save 10% sedimentation time and main
Corresponding raw and auxiliary material.
Embodiment illustrated in fig. 2 two: a kind of monocrystalline silicon heterojunction solar cell two sides differentiation suede structure, silicon wafer 1
Side to light and shady face structure it is different, side to light is pyramidion structure 2,1-3 μm of 2 size of pyramidion suede structure；Institute
Stating shady face is burnishing surface 4.
Its preparation step are as follows: the monocrystalline silicon piece for being 2 Ω ㎝ for resistivity is packed into used in the cleaning of conventional groove cleaning machine
The gaily decorated basket in, 100 baskets；Prerinse is carried out in groove-type cleaning machine, and two surfaces of silicon wafer are respectively carved subsequently into etching groove
8 μm or so of erosion；Making herbs into wool is carried out subsequently into texturing slot, obtains about 2 microns of flannelette pyramid size of pyramid structure；By silicon wafer
Washing drying；Then silicon wafer is poured by Chained cleaning machine from the gaily decorated basket using feeder, subsequently into chain type wash phase, used
The surface of the mixed solution or dense potassium hydroxide or sodium hydroxide of hydrofluoric acid and nitric acid or tetramethylammonium hydroxide to silicon wafer
It is polished, obtains structure as shown in Fig. 2, then carry out RCA cleaning, HF removes natural oxidizing layer, dries.It obtains in this way
Pyramidion suede structure of silicon wafer shady face during CVD deposition and PVD deposition compared to side to light can save 23% it is heavy
Product time and main corresponding raw and auxiliary material.According to sunykatuib analysis as a result, this structure can have the short-circuit current gain of 0.3mA/cm2.
For the present embodiment compared with the two-sided making herbs into wool piece silicon wafer of tradition, the film source of two kinds of cell pieces is the same, is a difference in that backlight
Piece has carried out the polishing at the back side.It has passed through the silk that battery prepares subsequent amorphous silicon plated film, TCO deposition and electrode preparation at the same time
Print technique.It can be seen from the results that carrying on the back open-circuit voltage (Voc), the short circuit current (Isc and Jsc), fill factor of solar cell after polishing
(FF) and transfer efficiency has promotion, the performance such as following figure:
The reason of Voc and FF is promoted is: the surface area of silicon wafer becomes smaller after polishing, and recombination rate reduces.
The reason of short circuit current is promoted is: the reflectivity of silicon chip back side improves after polishing, causes in silicon wafer interior lights the past
When surface is transmitted to back surface, silicon wafer back surface reflects so that light enters inside cell piece herein, is absorbed again.Back polishing
Piece and the comparison of two-sided making herbs into wool piece backside reflection rate are as shown below: test1-test4 is the backside reflection rate for carrying on the back polished silicon wafer；
Baseline is the backside reflection rate of two-sided making herbs into wool piece.It can be seen that long-wave band backlight backside reflection rate compared to two-sided making herbs into wool
Piece significantly improves.
Claims (10)
1. a kind of monocrystalline silicon heterojunction solar cell two sides differentiation suede structure, it is characterised in that: silicon wafer structure meets light
Face and shady face structure are different, and the side to light is pyramid suede structure, and the shady face is burnishing surface or size is greater than and meets
The pyramid suede structure of smooth surface.
2. monocrystalline silicon heterojunction solar cell according to claim 1 two sides differentiation suede structure, it is characterised in that:
1-3 μm of size of the side to light pyramid suede structure.
3. monocrystalline silicon heterojunction solar cell according to claim 1 two sides differentiation suede structure, it is characterised in that:
1-3 μm of size of the side to light pyramid suede structure；5-10 μm of size of the shady face pyramid suede structure.
4. a kind of preparation method of monocrystalline silicon heterojunction solar cell two sides differentiation suede structure, it is characterised in that: silicon wafer
Two sides the making herbs into wool of two sides differentiation flannelette is completed in different making herbs into wool section, remove autoxidation then in turn through RCA cleaning, HF
Layer and go moisture, drying.
5. monocrystalline silicon heterojunction solar cell according to claim 4 two sides differentiation suede structure preparation method,
Be characterized in that: overall process uses Chained cleaning machine making herbs into wool mode, and the method after groove type etching using wet-chemical chamber is to backlight
Face performs etching, and realizes the increase or polishing of pyramid suede structure, then carry out RCA cleaning, HF go natural oxidizing layer and
Slow lifting, drying.
6. monocrystalline silicon heterojunction solar cell according to claim 5 two sides differentiation suede structure preparation method,
It is characterized in that: silicon wafer being polished using inorganic base, inorganic base is dense potassium hydroxide or sodium hydroxide.
7. monocrystalline silicon heterojunction solar cell according to claim 5 two sides differentiation suede structure preparation method,
It is characterized in that: silicon wafer being polished using organic base, organic base is tetramethylammonium hydroxide.
8. monocrystalline silicon heterojunction solar cell according to claim 5 two sides differentiation suede structure preparation method,
It is characterized in that: silicon wafer being polished using mixed acid, mixed acid is the mixed solution of hydrofluoric acid and nitric acid.
9. monocrystalline silicon heterojunction solar cell according to claim 4 two sides differentiation suede structure preparation method,
It is characterized in that: using the different Chained cleaning machine rinse bath of continuous built-in two temperature, alkali concentration, flocking additives to silicon wafer
Carry out the making herbs into wool of differentiation flannelette.
10. monocrystalline silicon heterojunction solar cell according to claim 9 two sides differentiation suede structure preparation method,
Be characterized in that: differentiation flannelette making herbs into wool is using conventional alkali making herbs into wool.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810570144 | 2018-06-05 | ||
| CN2018105701449 | 2018-06-05 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265499A (en) * | 2019-05-28 | 2019-09-20 | 中国科学院物理研究所 | Silicon wafer and its preparation method and application with suede structure |
| CN112599410A (en) * | 2020-12-16 | 2021-04-02 | 上海玻纳电子科技有限公司 | Method for improving boron diffusion of N-type monocrystalline silicon wafer |
| CN113488550A (en) * | 2021-07-06 | 2021-10-08 | 安徽华晟新能源科技有限公司 | Heterojunction battery and heterojunction battery preparation method |
| CN114883454A (en) * | 2022-06-08 | 2022-08-09 | 湖南红太阳新能源科技有限公司 | Phosphorus diffusion gettering and cleaning method suitable for N-type silicon wafer |
| CN116613224A (en) * | 2023-07-20 | 2023-08-18 | 天合光能股份有限公司 | Solar cell, manufacturing method thereof, photovoltaic module and photovoltaic system |
| CN114883454B (en) * | 2022-06-08 | 2024-04-30 | 湖南红太阳新能源科技有限公司 | Phosphorus diffusion gettering and cleaning method suitable for N-type silicon wafer |
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| CN106328724A (en) * | 2016-11-06 | 2017-01-11 | 常州天合光能有限公司 | Double-sided crystal silicon solar cell and making method thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265499A (en) * | 2019-05-28 | 2019-09-20 | 中国科学院物理研究所 | Silicon wafer and its preparation method and application with suede structure |
| CN112599410A (en) * | 2020-12-16 | 2021-04-02 | 上海玻纳电子科技有限公司 | Method for improving boron diffusion of N-type monocrystalline silicon wafer |
| CN112599410B (en) * | 2020-12-16 | 2022-12-13 | 上海玻纳电子科技有限公司 | Method for improving boron diffusion of N-type monocrystalline silicon wafer |
| CN113488550A (en) * | 2021-07-06 | 2021-10-08 | 安徽华晟新能源科技有限公司 | Heterojunction battery and heterojunction battery preparation method |
| CN114883454A (en) * | 2022-06-08 | 2022-08-09 | 湖南红太阳新能源科技有限公司 | Phosphorus diffusion gettering and cleaning method suitable for N-type silicon wafer |
| CN114883454B (en) * | 2022-06-08 | 2024-04-30 | 湖南红太阳新能源科技有限公司 | Phosphorus diffusion gettering and cleaning method suitable for N-type silicon wafer |
| CN116613224A (en) * | 2023-07-20 | 2023-08-18 | 天合光能股份有限公司 | Solar cell, manufacturing method thereof, photovoltaic module and photovoltaic system |
| CN116613224B (en) * | 2023-07-20 | 2023-09-29 | 天合光能股份有限公司 | Solar cell, manufacturing method thereof, photovoltaic module and photovoltaic system |
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Application publication date: 20190416 |