CN203690312U - Anti-reflection film and solar cell with anti-reflection film - Google Patents
Anti-reflection film and solar cell with anti-reflection film Download PDFInfo
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- CN203690312U CN203690312U CN201420050604.2U CN201420050604U CN203690312U CN 203690312 U CN203690312 U CN 203690312U CN 201420050604 U CN201420050604 U CN 201420050604U CN 203690312 U CN203690312 U CN 203690312U
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Abstract
The utility model provides an anti-reflection film and a solar cell with the anti-reflection film. The anti-reflection film comprises a first layer of the film, a second layer of the film and a third layer of the film, wherein the first layer of the film is covered on the surface of the solar cell; the second layer of the film is covered on the upper surface of the first layer of the film; and the third layer of the film is covered on the upper surface of the second layer of the film, a refraction index of the first layer of the film is greater than a refraction index of the second layer of the film, and a refraction index of the second layer of the film is greater than a refraction index of the third layer of the film. The anti-refraction film provided by the utility model has very low reflectivity in the overall wave band of incident light, and obviously improves the reflectivity of the cell in the short wave direction. The film formed by complementation of the three layers of the film has a good anti-reflection effect, not only improves absorption of the cell for short-wavelength light, but also provides a good hydrogen passivation effect for subsequent procedures.
Description
Technical field
The utility model relates to technical field of solar utilization technique, relates in particular to a kind of antireflective coating and has the solar battery sheet of this antireflective coating.
Background technology
Along with scientific and technological fast development, the cost continuous decrease of crystal-silicon solar cell and photovoltaic system, has approached conventional power generation usage.Crystal silicon solar energy battery has that manufacture craft maturation, photoelectric conversion efficiency are high, stable performance, commercialization degree advantages of higher, accounts for approximately 90% of the whole photovoltaic market share.The polysilicon of conventional solar level is all used improved Siemens purification technique, and this technology maturity is high, and the silicon purity of production is high, but also exist production capacity low, to shortcomings such as environmental threat are large, greatest problem is that cost is high.The Physical Metallurgy method purifying polycrystalline silicon technology growing up in recent years has that production technology is simple, cost is low, production capacity is large and environment amenable advantage, likely becomes the developing direction of following polysilicon solar cell material.
In order to reduce silicon face to reflection of light, deposited silicon nitride antireflective coating is all wanted on conventional crystal-silicon solar cell surface, this film also can play the effect of surface passivation simultaneously, can passivated semiconductor surface and inner dangling bonds, reduce the density of states, have the insulation of anti-oxidant, burn into and stop sodium ion, shelter metal and water vapour to effects such as semiconductor diffusion inside.
The spectral response of silicon solar cell is generally in 300nm～1200nm scope at present, and battery mainly utilizes the sunlight of this scope.Industrialization utilizes antireflective and the passivation film of PECVD (plasma reinforced chemical vapour deposition) deposition dual-layer silicon nitride film as polycrystalline silicon solar cell conventionally, to substitute original monofilm, the ground floor thickness of common process is 30～35nm, refractive index is 2.6～2.8, second layer thickness is 50～55nm, refractive index is 2.0～2.2, and total film thickness is 85～90nm, and refractive index is 2.0～2.1.Although double-layer silicon nitride film has obviously improved the problem of only having individual layer silicon nitride film to bring, strengthen the anti-reflective effect to light, the short circuit current of battery is improved, but the problem of double-layer silicon nitride film maximum is poor in the anti-reflective effect of shortwave direction, so must constantly improve and optimize depositing operation.
Summary of the invention
For problems of the prior art, the purpose of this utility model is to solve the poor technical problem of anti-reflective effect of the shortwave direction that in prior art, solar battery sheet exists, and a kind of antireflective coating with trilamellar membrane structure is provided.
For achieving the above object, the technical solution of the utility model is as follows:
For an antireflective coating for solar battery sheet, described antireflective coating comprises:
The first tunic, is covered in the surface of described solar battery sheet;
The second tunic, is covered in the upper surface of described the first tunic; And
Trilamellar membrane, be covered in the upper surface of described the second tunic, total refractive index of described the first tunic, described the second tunic and described trilamellar membrane is 2.08～2.16, the thickness sum of described the first tunic, described the second tunic and described trilamellar membrane is 82～86nm, and the refractive index of described the first tunic is greater than the refractive index of described the second tunic, the refractive index of described the second tunic is greater than the refractive index of described trilamellar membrane.
In an execution mode of antireflective coating of the present utility model, the thickness of described the second tunic is less than the thickness of described the first tunic and the thickness of described trilamellar membrane.
In another execution mode of antireflective coating of the present utility model, described the first tunic, described the second tunic and described trilamellar membrane are silicon nitride film.
In another execution mode of antireflective coating of the present utility model, the thickness of described the first tunic is 24～28nm.
In another execution mode of antireflective coating of the present utility model, the refractive index of described the first tunic is 2.5～2.7.
In another execution mode of antireflective coating of the present utility model, the thickness of described the second tunic is 10～15nm.
In another execution mode of antireflective coating of the present utility model, the refractive index of described the second tunic is 2.2～2.4.
In another execution mode of antireflective coating of the present utility model, the thickness of described trilamellar membrane is 40～50nm.
In another execution mode of antireflective coating of the present utility model, the refractive index of described trilamellar membrane is 1.9～2.0.
On the other hand, the utility model also provides a kind of solar battery sheet, and the surface of described solar battery sheet has above-mentioned antireflective coating.
On the one hand, the utility model also provides a kind of solar panel, is packaged with above-mentioned solar battery sheet in solar panel again.
Than prior art, the beneficial effects of the utility model are:
Antireflective coating of the present utility model has very low reflectivity at the whole wave band of incident light, obviously improve the reflectivity of battery in shortwave direction, the complementary film forming of trilamellar membrane plays good anti-reflective effect, not only improved the absorption of battery to short-wavelength light and provides good hydrogen passivation effect for subsequent handling.
Brief description of the drawings
Fig. 1 is the structural representation of antireflective coating of the present utility model;
Fig. 2 is the reflectance curve figure of the double layer antireflection coating of antireflective coating of the present utility model and prior art.
Wherein, description of reference numerals is as follows:
At the bottom of 101 silicon wafer-based
201 first tunics
202 second tunics
203 trilamellar membranes
Embodiment
The exemplary embodiments that embodies the utility model feature & benefits will describe in detail in the following description.Be understood that the utility model can have various variations on different embodiment, it neither departs from scope of the present utility model, and explanation wherein and accompanying drawing be when the use that explain in itself, but not in order to limit the utility model.For ease of understanding and describing, " upper surface " described in the utility model refers to the side of antireflective coating away from solar battery sheet.
Lower mask body is introduced the antireflective coating of the utility model preferred embodiment.
As shown in Figure 1, the antireflective coating of the utility model embodiment, comprises the first tunic 201 that is covered in 101 surfaces at the bottom of silicon wafer-based, is covered in the second tunic 202 of the first tunic 201 upper surfaces and is covered in the trilamellar membrane 203 of the second tunic 202 upper surfaces.
According to optical principle, only have the refractive index of trilamellar membrane to reduce successively from top to bottom, antireflective coating just can play anti-reflective effect, and therefore the refractive index of the first tunic 201 is greater than the refractive index of the second tunic 202, and the refractive index of the second tunic 202 is greater than the refractive index of trilamellar membrane 203.
Antireflective coating of the present utility model, the thickness of the second tunic 202 is preferably less than the thickness of the first tunic 201 thickness and trilamellar membrane 203.
Total refractive index of the first tunic 201, the second tunic 202 and trilamellar membrane 203 is preferably 2.08～2.16, and the thickness sum of the first tunic 201, the second tunic 202 and trilamellar membrane 203 is preferably 82～86nm, and three layers of antireflective coating in this parameter area have preferably anti-reflective effect.
The 101 polysilicon silicon chips for metallurgy method purification at the bottom of silicon wafer-based, but be not limited to this.
The first tunic 201, the second tunic 202 and trilamellar membrane 203 are all preferably silicon nitride (Si
xn
y) antireflective coating, wherein, Si
xn
ycan there is multiple different form, for example y=4, x=3, or other ratio.
The first tunic 201 is deposited on the surface of metallurgy polycrystalline silicon solar battery, and its Main Function is the complex centre of wanting in passivation silicon chip surface and body, increases the minority carrier life time of battery.Therefore in the time of plated film, strengthen the flow of silane, with the Si of the q.s that produces, impel the lattice atoms sequence of silicon nitride more approaching with Si substrate, can play better surface passivation effect.The thickness of the first tunic 201 is preferably 24～28nm, and refractive index is preferably 2.5～2.7.
The second tunic 202 is deposited on the upper surface of the first tunic, because the refractive index of the first tunic 201 is much larger than the refractive index of trilamellar membrane, so need to increase a graded-index layer or resilient coating between the first tunic 201 and trilamellar membrane 203.So the effect of the second tunic 202, is to reduce as far as possible because the high index of refraction of the first tunic produces high extinction coefficient, the reflection between impact and minimizing the first tunic 201 and the interface of trilamellar membrane 203.The thickness of the second tunic 202 is preferably 10～15nm, and refractive index is preferably 2.2～2.4.
Production technology and the technological parameter of below introducing antireflective coating of the present utility model and metallurgy polycrystalline silicon solar battery sheet, related technique is known in those skilled in the art, and the concrete steps at this to technique repeat no more.
Utilize domestic plasma reinforced chemical vapour deposition instrument (model: M82200-3/UM), deposit successively three layers of silicon nitride film at clean, dry metallurgical silicon chip surface, the gas using when three layers of silicon nitride film of deposition is ammonia (NH
3) and silane (SiH
4), depositing temperature is preferably 460 DEG C, and pressure is preferably 180～200pa (Pascal), and deposition power is preferably 4000W;
In the time of deposition ground floor silicon nitride film, NH
3with SiH
4flow be respectively 3000sccm (mark condition milliliter per minute) and 1000sccm, sedimentation time is 100～150 seconds (adjusting according to the attenuate amount of silicon wafer to manufacture Surface Texture);
At deposition second layer silicon nitride film, NH
3with SiH
4flow be respectively 3429sccm and 571sccm, sedimentation time is 70～90 seconds;
At the 3rd layer of silicon nitride film of deposition, NH
3with SiH
4flow be respectively 3750sccm and 250sccm, sedimentation time is 420～470 seconds;
Thickness and refractive index that the elliptical laser polarization measurement instrument (model: SE400adv-PV) that utilizes subsequently Zeiss, Germany company to produce is tested these three layers of silicon nitride films, the thickness of ground floor silicon nitride film is 24～28nm, refractive index is 2.5～2.7; The thickness of second layer silicon nitride film is 10～15nm, and refractive index is 2.2～2.4; The thickness of the 3rd layer of silicon nitride film is 40～50nm, and refractive index is 1.9～2.0.
Utilize the U-3400 type ultraviolet-visible spectrophotometer test double-layer silicon nitride film of prior art and three layers of silicon nitride film of metallurgy polycrystalline silicon solar battery sheet of the present utility model at wavelength the reflectivity for 300nm～1000nm place, result as shown in Figure 2, wherein curve a is the reflectivity of double-layer silicon nitride film, and b, c are respectively the reflectivity of three layers of silicon nitride film.The reflectivity that can obviously find out three layers of silicon nitride film from Fig. 2 moves to shortwave direction, reflectivity significantly reduces, the centre wavelength that minimum reflectivity (0.3%) is corresponding moves to long wave direction simultaneously, makes solar spectrum responses match better of silion cell increase light absorption and makes full use of solar spectrum.
In the time adopting silicon nitride film as antireflective coating, deposition process can produce a large amount of hydrogen, after Fast Sintering, hydrogen bond is combined with the dangling bonds of the existence of silion cell, greatly reduce the complex centre density of battery surface, test respectively original silicon chip, have the silicon chip of double-layer silicon nitride film and have the average minority carrier lifetime of the silicon chip of three layers of silicon nitride film, measurement result is respectively 5.928 μ s, 6.142 μ s, 6.602 μ s.As can be seen here, the minority carrier life time of the battery of three layers of silicon nitride film of deposition significantly increases.In addition, three layers of silicon nitride film have obviously improved the passivation effect to battery surface.
Taking 8 inches of (156mm × 156mm) specifications as example, applying after antireflective coating of the present utility model, the reflectivity on solar battery sheet surface is minimum drops to 0.3%, cell piece declines 8% at the luminance factor duplicature cell piece of shortwave direction, minority carrier life time improves approximately 9%, and the electricity conversion of cell piece has improved 0.26% than the cell piece of deposition duplicature.
The utility model also provides a kind of solar battery sheet, and the surface of solar battery sheet has above-mentioned antireflective coating.
The utility model also provides a kind of solar panel, in solar panel, be packaged with solar battery sheet of the present utility model, but the application of solar battery sheet of the present utility model is not limited to solar panel, and can be applied on other solar cell goods.
In sum, antireflective coating of the present utility model has very low reflectivity at the whole wave band of incident light, obviously improve the reflectivity of battery in shortwave direction, the complementary film forming of trilamellar membrane plays good anti-reflective effect, not only improved the absorption of battery to short-wavelength light and provides good hydrogen passivation effect for subsequent handling.
Those skilled in the art should recognize change and the retouching the scope and spirit of the present utility model that the appended claim of the utility model discloses, done in the case of not departing from, within all belonging to the protection range of claim of the present utility model.
Claims (10)
1. for an antireflective coating for solar battery sheet, it is characterized in that, described antireflective coating comprises:
The first tunic, is covered in the surface of described solar battery sheet;
The second tunic, is covered in the upper surface of described the first tunic; And
Trilamellar membrane, be covered in the upper surface of described the second tunic, total refractive index of described the first tunic, described the second tunic and described trilamellar membrane is 2.08～2.16, the thickness sum of described the first tunic, described the second tunic and described trilamellar membrane is 82～86nm, and the refractive index of described the first tunic is greater than the refractive index of described the second tunic, the refractive index of described the second tunic is greater than the refractive index of described trilamellar membrane.
2. according to the antireflective coating of claim 1, it is characterized in that, the thickness of described the second tunic is less than the thickness of described the first tunic and the thickness of described trilamellar membrane.
3. according to the antireflective coating of claim 2, it is characterized in that, the thickness of described the first tunic is 24～28nm.
4. according to the antireflective coating of claim 2, it is characterized in that, the refractive index of described the first tunic is 2.5～2.7.
5. according to the antireflective coating of claim 2, it is characterized in that, the thickness of described the second tunic is 10～15nm.
6. according to the antireflective coating of claim 2, it is characterized in that, the refractive index of described the second tunic is 2.2～2.4.
7. according to the antireflective coating of claim 2, it is characterized in that, the thickness of described trilamellar membrane is 40～50nm.
8. according to the antireflective coating of claim 2, it is characterized in that, the refractive index of described trilamellar membrane is 1.9～2.0.
9. according to the antireflective coating of any one in claim 1 to 8, it is characterized in that, described the first tunic, described the second tunic and described trilamellar membrane are silicon nitride film.
10. a solar battery sheet, is characterized in that, the surface of described solar battery sheet has according to the antireflective coating of any one in claim 1-9.
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| CN201420050604.2U CN203690312U (en) | 2014-01-26 | 2014-01-26 | Anti-reflection film and solar cell with anti-reflection film |
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| CN201420050604.2U CN203690312U (en) | 2014-01-26 | 2014-01-26 | Anti-reflection film and solar cell with anti-reflection film |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104091839A (en) * | 2014-07-21 | 2014-10-08 | 内蒙古日月太阳能科技有限责任公司 | Antireflective film for solar cell piece and manufacturing method thereof |
| CN105280729A (en) * | 2015-03-13 | 2016-01-27 | 常州天合光能有限公司 | Solar cell passivation and antireflection thin film and preparation method thereof |
| CN107887473A (en) * | 2017-11-07 | 2018-04-06 | 山西潞安太阳能科技有限责任公司 | A kind of solar cell continuous gradation membrane preparation method |
-
2014
- 2014-01-26 CN CN201420050604.2U patent/CN203690312U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104091839A (en) * | 2014-07-21 | 2014-10-08 | 内蒙古日月太阳能科技有限责任公司 | Antireflective film for solar cell piece and manufacturing method thereof |
| CN104091839B (en) * | 2014-07-21 | 2016-09-07 | 内蒙古日月太阳能科技有限责任公司 | A kind of manufacture method of the antireflective coating for solar battery sheet |
| CN105280729A (en) * | 2015-03-13 | 2016-01-27 | 常州天合光能有限公司 | Solar cell passivation and antireflection thin film and preparation method thereof |
| CN107887473A (en) * | 2017-11-07 | 2018-04-06 | 山西潞安太阳能科技有限责任公司 | A kind of solar cell continuous gradation membrane preparation method |
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