CN201307596Y - Silicon solar battery dual-layer anti-reflection film - Google Patents
Silicon solar battery dual-layer anti-reflection film Download PDFInfo
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- CN201307596Y CN201307596Y CNU2008202151006U CN200820215100U CN201307596Y CN 201307596 Y CN201307596 Y CN 201307596Y CN U2008202151006 U CNU2008202151006 U CN U2008202151006U CN 200820215100 U CN200820215100 U CN 200820215100U CN 201307596 Y CN201307596 Y CN 201307596Y
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- film
- silicon
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- silicon nitride
- reflection film
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Abstract
The utility model relates to a silicon solar battery dual-layer anti-reflection film, wherein a layer of silicon nitride film (2.1) settles on the facade of a silicon slice substrate (1) of the film, and a layer of silicon dioxide film (2.2) then settles on the silicon nitride film (2.1), so as to form a silicon nitride/silicon dioxide dual-layer reflection film (2). The utility model film has lower refractive index than the traditional single-layer anti-reflection film, and the battery efficiency is improved.
Description
(1) technical field
The utility model relates to a kind of double-layer reflection-decreasing film for silicon solar cell that is used for solar cell.Belong to technical field of solar batteries.
(2) background technology
Illumination is to the silicon chip of solar cell on plane the time, and wherein a part can be reflected, and can not enter the battery sheet, even to adopting the silicon face of matte, and 11% the reflection loss of also having an appointment.On silicon chip, cover one deck antireflection film layer, can reduce reflection of light, thereby increase the efficient of battery.At present, monocrystaline silicon solar cell adopts one deck silicon nitride film as the antireflective system in industrial production mostly, and silicon nitride film can also play the effect of passivation.According to λ/4 antireflective principles, by regulating the thickness of silicon nitride film, can make reflectivity minimum near centre wavelength, thereby make the effective luminous flux that enters solar energy reach maximum, improve the efficient of solar cell.
(3) summary of the invention
The purpose of this utility model is to overcome above-mentioned deficiency, and a kind of double-layer reflection-decreasing film for silicon solar cell that can make antireflection film have better reflection preventing ability is provided.
The purpose of this utility model is achieved in that a kind of double-layer reflection-decreasing film for silicon solar cell, be at silicon chip substrate front surface deposition one deck silicon nitride film, on silicon nitride film, deposit the layer of silicon dioxide film again, form the double-deck reflective film of silicon nitride/silicon dioxide.
Because the spectral region of sunlight is very wide, for reflectivity lower in the broad wave-length coverage, can adopt multi-layer film structure, makes the reflectance curve of film have two or more low spots, thereby obtain lower reflectivity in the broad wave-length coverage.The metallization processes that conforms to the principle of simplicity reduces structural stress and reduces the damage of battery body is set out, and the number of plies of antireflective coating is too much unsuitable, so the utility model adopts bilayer film as antireflection layer.
On the one hand, the silicon nitride film near silicon chip surface has the effect of surface passivation, and surface recombination velocity is reduced, and helps improving the efficient of battery.On the other hand, the formation of double-layer reflection-decreasing film makes film have lower reflectivity in the broad wave-length coverage, and the efficient of battery is improved.Adopt after this double-layer reflection-decreasing film, than the silicon nitride surface light reflection minimizing 3%～4% of single refractive index (refractive index is 1.9～2.1), the efficient of battery improves 1.5～2.0%.
The thickness that this silicon nitride-silicon dioxide layer forms double layer antireflection coating satisfies λ/4-λ/2 principles, and satisfy from incident medium glass to silicon dioxide, silicon nitride, silicon substrate refractive index increase gradually, can reduce reflectivity, thereby improve the efficient of battery.
To sum up, the utlity model has following characteristics:
The utility model adopts the double-layer reflection-decreasing film structure when guaranteeing surface passivation effect, make antireflection film have better reflection preventing ability.Have littler refractive index than conventional monolayers antireflection film, battery efficiency improves.
(4) description of drawings
Fig. 1 is the utility model double-layer reflection-decreasing film for silicon solar cell cross-sectional view.
Among the figure: silicon chip substrate 1, double-deck reflective film 2, silicon nitride film 2.1, silica membrane 2.2, EVA layer 3.
(5) embodiment
Referring to Fig. 1, the double-layer reflection-decreasing film for silicon solar cell that the utility model relates to, be at silicon chip substrate 1 front surface deposition one deck silicon nitride film 2.1, on silicon nitride film 2.1, deposit layer of silicon dioxide film 2.2 again, form the double-deck reflective film 2 of silicon nitride/silicon dioxide.The technological process of its preparation is:
Step 1, on the silicon chip substrate after the making herbs into wool 1, utilize plasma enhanced chemical vapor deposition method (PECVD), adopt SH
4And NH
3Be reaction source, SiH
4With NH
4Reaction, deposition one deck silicon nitride film 2.1, this layer silicon nitride film 2.1 thick 110nm.400 ℃ of silicon chip substrate temperature, high frequency electric source power 500W, the frequency 13.56mHz of high frequency electric source, SiH
4Flow 500sccm (standardcubic centimeter per minute), NH
3Flow 5000sccm.
Step 2, on silicon nitride film 2.1, utilize plasma enhanced chemical vapor deposition method (PECVD), adopt SH
4And N
2O is a reaction source, SiH
4With N
2The O reaction, deposition layer of silicon dioxide film 2.2, this layer silica membrane 2.2 thickness 50nm.350 ℃ of silicon chip substrate temperature, high frequency electric source power 110W, the frequency 13.56mHz of high frequency electric source, SiH
4Flow 200sccm, N
2O flow 640sccm.
Claims (1)
1, a kind of double-layer reflection-decreasing film for silicon solar cell, it is characterized in that described film is at silicon chip substrate (1) front surface deposition one deck silicon nitride film (2.1), on silicon nitride film (2.1), deposit layer of silicon dioxide film (2.2) again, form the double-deck reflective film (2) of silicon nitride/silicon dioxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008202151006U CN201307596Y (en) | 2008-12-05 | 2008-12-05 | Silicon solar battery dual-layer anti-reflection film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008202151006U CN201307596Y (en) | 2008-12-05 | 2008-12-05 | Silicon solar battery dual-layer anti-reflection film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201307596Y true CN201307596Y (en) | 2009-09-09 |
Family
ID=41100063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008202151006U Expired - Fee Related CN201307596Y (en) | 2008-12-05 | 2008-12-05 | Silicon solar battery dual-layer anti-reflection film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201307596Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101958353A (en) * | 2010-04-20 | 2011-01-26 | 常州天合光能有限公司 | Three-layer antireflection passivating film on solar battery surface |
| CN103117310A (en) * | 2013-02-27 | 2013-05-22 | 上海艾力克新能源有限公司 | Double-layer silicon nitride antireflection film and manufacture method thereof |
| CN103132084A (en) * | 2011-11-29 | 2013-06-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | Preparation method of high refractive index semiconductor surface anti-reflection passivation composite structure |
-
2008
- 2008-12-05 CN CNU2008202151006U patent/CN201307596Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101958353A (en) * | 2010-04-20 | 2011-01-26 | 常州天合光能有限公司 | Three-layer antireflection passivating film on solar battery surface |
| CN103132084A (en) * | 2011-11-29 | 2013-06-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | Preparation method of high refractive index semiconductor surface anti-reflection passivation composite structure |
| CN103132084B (en) * | 2011-11-29 | 2016-06-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | The preparation method of a kind of high refractive index semiconductor surface anti-reflection passivation composite structure |
| CN103117310A (en) * | 2013-02-27 | 2013-05-22 | 上海艾力克新能源有限公司 | Double-layer silicon nitride antireflection film and manufacture method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Atamps dimensional energy (Taicang) Co. Ltd. Assignor: Jiangyin Hairun Solar Energy Power Co., Ltd. Contract record no.: 2010320001127 Denomination of utility model: Double-layer reflection-decreasing film for silicon solar cell and preparation method thereof Granted publication date: 20090909 License type: Exclusive License Record date: 20100914 |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090909 Termination date: 20171205 |