CN110473921A - A kind of PERC battery back passivating structure and preparation method - Google Patents
A kind of PERC battery back passivating structure and preparation method Download PDFInfo
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- CN110473921A CN110473921A CN201910553483.0A CN201910553483A CN110473921A CN 110473921 A CN110473921 A CN 110473921A CN 201910553483 A CN201910553483 A CN 201910553483A CN 110473921 A CN110473921 A CN 110473921A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract 11
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract 11
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 100
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 100
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000002131 composite material Substances 0.000 claims abstract description 9
- 150000004767 nitrides Chemical class 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 claims abstract description 4
- 230000008021 deposition Effects 0.000 claims abstract description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 4
- 229920005591 polysilicon Polymers 0.000 claims abstract description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 22
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 11
- 229910021529 ammonia Inorganic materials 0.000 claims description 11
- 229910000077 silane Inorganic materials 0.000 claims description 11
- 229920001296 polysiloxane Polymers 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 90
- 238000002161 passivation Methods 0.000 description 9
- 229910052593 corundum Inorganic materials 0.000 description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Manufacturing & Machinery (AREA)
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- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention belongs to solar cell fields, and in particular to a kind of PERC battery back passivating structure and preparation method.Including crystalline silicon substrate, alumina layer and the composite nitride silicon layer stacked gradually；The crystalline silicon substrate is monocrystalline or polysilicon chip, is p-type crystal silicon chip, with a thickness of 180~200 μm；The alumina layer is PECVD deposition；The composite nitride silicon layer includes the first silicon nitride layer, the second silicon nitride layer and third silicon nitride layer；The thickness of first silicon nitride layer is not more than the thickness of the second silicon nitride layer, and the thickness of second silicon nitride layer is not more than the thickness of third silicon nitride layer.PERC battery back passivating structure provided by the invention and preparation method significantly improve open-circuit voltage and short circuit current, greatly improve the transfer efficiency of battery.
Description
Technical field
The invention belongs to solar cell fields, and in particular to a kind of PERC battery back passivating structure and preparation method.
Background technique
With the continuous propulsion that efficient solar battery is researched and developed, good surface passivation has become high conversion efficiency solar cell
Indispensable, in recent years, the passivated emitter back side battery (PERC) technology is got the attention, PERC, that is, passivation emitter
Rear-face contact (Passivated EmitterRear Contact) battery is the sun of a kind of emitter and back side passivation on double surfaces
Battery.By depositing one layer of Al in cell piece back surface2O3, then reuse Plasma Enhanced Chemical Vapor Deposition (PECVD) PECVD
(Plasma Enhanced Chemical Vapor Deposition) overleaf plates layer of sin x film, to Al2O3Play protection
Effect；Meanwhile this layer of SiNx film can also improve minority carrier life time, increase the reflection to long wave, make full use of to light, increase
Absorption of the silicon wafer to long wave, significantly improves open-circuit voltage and short circuit current, greatly improves the transfer efficiency of battery.
Summary of the invention
In view of the problems of the existing technology, the present invention provides a kind of PERC batteries to carry on the back passivating structure and preparation method,
Open-circuit voltage and short circuit current are significantly improved, the transfer efficiency of battery is greatly improved.
Present invention technical solution used for the above purpose are as follows:
A kind of PERC battery back passivating structure and preparation method.Including stack gradually crystalline silicon substrate, alumina layer and multiple
Close silicon nitride layer；
The crystalline silicon substrate is monocrystalline or polysilicon chip, is p-type crystal silicon chip, with a thickness of 180~200 μm；
The alumina layer is PECVD deposition；
The composite nitride silicon layer includes the first silicon nitride layer, the second silicon nitride layer and third silicon nitride layer；
The thickness of first silicon nitride layer is not more than the thickness of the second silicon nitride layer, the thickness of second silicon nitride layer
No more than the thickness of third silicon nitride layer.
Further, the silicone content of second silicon nitride layer is greater than the first silicon nitride layer and the silicon of third silicon nitride layer contains
Amount.
Further, for the refractive index of first silicon nitride layer less than 2.08, the refractive index of second silicon nitride layer is big
In 2.15, the refractive index of the third silicon nitride layer is less than 2.08.
Further, first silicon nitride layer with a thickness of 20-40nm, second silicon nitride layer with a thickness of 30-
60nm, the third silicon nitride layer with a thickness of 40-70nm.
Further, the alumina layer is with a thickness of 12-20nm.
Further, the crystalline silicon substrate is with a thickness of 180~200 μm.
The present invention also provides a kind of PERC batteries to carry on the back passivating structure preparation method, which comprises
Making herbs into wool is carried out to crystalline silicon substrate, diffusion, laser doping, polished backside, removes phosphorosilicate glass, oxidation；
Back side PECVD prepares alumina layer；
First layer silicon nitride film is made on pellumina using PECVD, silane flow rate is 240~270sccm, ammonia
Flow is 860sccm；
The second silicon nitride layer is made using PECVD on first layer silicon nitride film, silane flow rate is 360~390sccm,
Ammonia flow is 780sccm；
Third silicon nitride layer is made using PECVD on second layer silicon nitride film, silane flow rate is 240~270sccm,
Ammonia flow is 860sccm.
The utility model has the advantages that
The refractive index of silicon nitride can be adjusted by different silane and ammonia ratio, higher according to principle refractive index
Then Si content is higher in film, film is easier is corroded by Al, and high refractive index can increase the reflection of light, while low-refraction energy
Enough stop Al2O3The effect that middle H is escaped outward is more obvious, and the efficiency that H is spread to Si layers is higher, achieves that better body in this way
Passivation.For the three layers of silicon nitride composite passivation film of proposition for meeting the above technical need innovation, close Al2O3Film is that refractive index is small
In 2.08, it is therefore an objective to which the H in barrier oxidation aluminium layer is escaped outward, and the efficiency for increasing H to Si layers of diffusion is higher, is achieved that in this way
Better body passivation；Intermediate one layer of refractive index of silicon nitride further increases the reflection of the long glistening light of waves 2.15 or more, to reduce Silicon-rich
The probability that passivating film is burnt by Al, deposits one layer of low-refraction passivating film as protective layer after high refractive index silicon nitride, the
Three silicon nitride layer refractive index are 2.08 hereinafter, notacoria aluminium paste is not rotten in subsequent sintering process to guarantee backside oxide aluminium
Erosion.
Passivating structure and preparation method are carried on the back using PERC battery of the present invention, Al can be stopped2O3In H to escaping
Out, it can preferably realize that body is passivated, while long-wave band light can be made to increase in the reflection of cell backside again, moreover it is possible to improve Al2O3's
Thermal stability protects it from being corroded by Al.Short circuit current and open-circuit voltage are improved, thus the photoelectric conversion efficiency of the battery promoted.
Specific embodiment
Embodiment 1
A kind of PERC battery back passivating structure, including crystalline silicon substrate, alumina layer and the composite nitride silicon layer stacked gradually；
The crystalline silicon substrate is monocrystalline or polysilicon chip, is p-type crystal silicon chip, with a thickness of 180~200 μm；
The alumina layer is PECVD deposition；
The composite nitride silicon layer includes the first silicon nitride layer, the second silicon nitride layer and third silicon nitride layer；
The thickness of first silicon nitride layer is not more than the thickness of the second silicon nitride layer, the thickness of second silicon nitride layer
No more than the thickness of third silicon nitride layer.
Further, the silicone content of second silicon nitride layer is greater than the first silicon nitride layer and the silicon of third silicon nitride layer contains
Amount.
Further, for the refractive index of first silicon nitride layer less than 2.08, the refractive index of second silicon nitride layer is big
In 2.15, the refractive index of the third silicon nitride layer is less than 2.08.
Further, first silicon nitride layer with a thickness of 20-40nm, second silicon nitride layer with a thickness of 30-
60nm, the third silicon nitride layer with a thickness of 40-70nm.
Further, the alumina layer is with a thickness of 12-20nm.
Further, the crystalline silicon substrate is with a thickness of 180~200 μm.
The silicone content of second silicon nitride layer is greater than the silicone content of the first silicon nitride layer and third silicon nitride layer.
The refractive index of first silicon nitride layer is less than 2.08, and the refractive index of second silicon nitride layer is greater than 2.15, institute
The refractive index of third silicon nitride layer is stated less than 2.08.
Embodiment 2
A kind of PERC battery back passivating structure preparation method, which comprises
Making herbs into wool is carried out to crystalline silicon substrate, diffusion, laser doping, polished backside, removes phosphorosilicate glass, oxidation；
The back side prepares alumina layer using PECVD；
First layer silicon nitride film is made on pellumina using PECVD, silane flow rate is 240~270sccm, ammonia
Flow is 860sccm；
The second silicon nitride layer is made using PECVD on first layer silicon nitride film, silane flow rate is 360~390sccm,
Ammonia flow is 780sccm；
Third silicon nitride layer is made using PECVD on second layer silicon nitride film, silane flow rate is 240~270sccm,
Ammonia flow is 860sccm.
The thickness of first silicon nitride layer is not more than the thickness of the second silicon nitride layer, the thickness of second silicon nitride layer
No more than the thickness of third silicon nitride layer.
First silicon nitride layer with a thickness of 20-40nm, second silicon nitride layer with a thickness of 30-60nm, it is described
Third silicon nitride layer with a thickness of 40-70nm.
The silicone content of second silicon nitride layer is greater than the silicone content of the first silicon nitride layer and third silicon nitride layer.
The refractive index of first silicon nitride layer is less than 2.08, and the refractive index of second silicon nitride layer is greater than 2.15, institute
The refractive index of third silicon nitride layer is stated less than 2.08.
The refractive index of silicon nitride can be adjusted by different silane and ammonia ratio, higher according to principle refractive index
Then Si content is higher in film, film is easier is corroded by Al, and high refractive index can increase the reflection of light, while low-refraction energy
Enough stop Al2O3The effect that middle H is escaped outward is more obvious, and the efficiency that H is spread to Si layers is higher, achieves that better body in this way
Passivation.For the three layers of silicon nitride composite passivation film of proposition for meeting the above technical need innovation, close Al2O3Film is that refractive index is small
In 2.08, it is therefore an objective to which the H in barrier oxidation aluminium layer is escaped outward, and the efficiency for increasing H to Si layers of diffusion is higher, is achieved that in this way
Better body passivation；Intermediate one layer of refractive index of silicon nitride further increases the reflection of the long glistening light of waves 2.2 or more, to reduce Silicon-rich
The probability that passivating film is burnt by Al, deposits one layer of low-refraction passivating film as protective layer after high refractive index silicon nitride, the
Three silicon nitride layer refractive index are 2.08 hereinafter, notacoria aluminium paste is not rotten in subsequent sintering process to guarantee backside oxide aluminium
Erosion.
Passivating structure and preparation method are carried on the back using PERC battery of the present invention, Al can be stopped2O3In H to escaping
Out, it can preferably realize that body is passivated, while long-wave band light can be made to increase in the reflection of cell backside again, moreover it is possible to improve Al2O3's
Thermal stability protects it from being corroded by Al.Short circuit current and open-circuit voltage are improved, thus the photoelectric conversion efficiency of the battery promoted.
Claims (7)
1. a kind of PERC battery carries on the back passivating structure, which is characterized in that the PERC battery back passivating structure includes stacking gradually
Crystalline silicon substrate, alumina layer and composite nitride silicon layer；
The crystalline silicon substrate is monocrystalline or polysilicon chip, is p-type crystal silicon chip, with a thickness of 180~200 μm；
The alumina layer is PECVD deposition；
The composite nitride silicon layer includes the first silicon nitride layer, the second silicon nitride layer and third silicon nitride layer；
The thickness of first silicon nitride layer is not more than the thickness of the second silicon nitride layer, and the thickness of second silicon nitride layer is little
In the thickness of third silicon nitride layer.
2. PERC battery according to claim 1 carries on the back passivating structure, which is characterized in that the silicon of second silicon nitride layer contains
Amount is greater than the silicone content of the first silicon nitride layer and third silicon nitride layer.
3. PERC battery according to claim 1 carries on the back passivating structure, which is characterized in that the refraction of first silicon nitride layer
Rate is less than 2.08, and the refractive index of second silicon nitride layer is greater than 2.15, and the refractive index of the third silicon nitride layer is less than 2.08.
4. PERC battery according to claim 1 carries on the back passivating structure, which is characterized in that the thickness of first silicon nitride layer
For 20-40nm, second silicon nitride layer with a thickness of 30-60nm, the third silicon nitride layer with a thickness of 40-70nm.
5. PERC battery according to claim 1 carries on the back passivating structure, which is characterized in that the alumina layer with a thickness of
12-20nm。
6. PERC battery according to claim 1 carries on the back passivating structure, which is characterized in that the crystalline silicon substrate is with a thickness of 180
~200 μm.
7. a kind of preparation method of PERC battery back passivating structure according to claim 1, which comprises
Making herbs into wool is carried out to crystalline silicon substrate, diffusion, laser doping, polished backside, removes phosphorosilicate glass, oxidation；
The back side prepares alumina layer using PECVD；
First layer silicon nitride film is made on pellumina using PECVD, silane flow rate is 240~270sccm, ammonia flow
For 860sccm；
The second silicon nitride layer is made using PECVD on first layer silicon nitride film, silane flow rate is 360~390sccm, ammonia
Flow is 780sccm；
Third silicon nitride layer is made using PECVD on second layer silicon nitride film, silane flow rate is 240~270sccm, ammonia
Flow is 860sccm.
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Cited By (6)
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|---|---|---|---|---|
| CN112234107A (en) * | 2020-10-12 | 2021-01-15 | 横店集团东磁股份有限公司 | Solar single-crystal PERC (Positive electrode collector) battery and preparation method thereof |
| AU2020203989B1 (en) * | 2020-05-29 | 2021-02-18 | Jinko Green Energy (Shanghai) Management Co., LTD | Photovoltaic module, solar cell, and manufacturing method therefor |
| AU2020203992B1 (en) * | 2020-05-29 | 2021-02-25 | Jinko Green Energy (Shanghai) Management Co.,LTD | Photovoltaic module, solar cell, and manufacturing method therefor |
| CN112652681A (en) * | 2020-12-23 | 2021-04-13 | 横店集团东磁股份有限公司 | PERC solar cell back passivation film, preparation method thereof and PERC solar cell |
| CN113594266A (en) * | 2021-07-15 | 2021-11-02 | 苏州鼎芯光电科技有限公司 | Protective layer of semiconductor photoelectric chip and preparation process of semiconductor |
| CN113809204A (en) * | 2021-09-08 | 2021-12-17 | 苏州潞能能源科技有限公司 | Efficient back passivation process for PERC solar cell |
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| CN112652681A (en) * | 2020-12-23 | 2021-04-13 | 横店集团东磁股份有限公司 | PERC solar cell back passivation film, preparation method thereof and PERC solar cell |
| CN113594266A (en) * | 2021-07-15 | 2021-11-02 | 苏州鼎芯光电科技有限公司 | Protective layer of semiconductor photoelectric chip and preparation process of semiconductor |
| CN113594266B (en) * | 2021-07-15 | 2024-01-02 | 苏州鼎芯光电科技有限公司 | Protective layer of semiconductor photoelectric chip and preparation process of semiconductor of protective layer |
| CN113809204A (en) * | 2021-09-08 | 2021-12-17 | 苏州潞能能源科技有限公司 | Efficient back passivation process for PERC solar cell |
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Application publication date: 20191119 |
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