CN107978644A - Solar cell - Google Patents
Solar cell Download PDFInfo
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- CN107978644A CN107978644A CN201611008511.3A CN201611008511A CN107978644A CN 107978644 A CN107978644 A CN 107978644A CN 201611008511 A CN201611008511 A CN 201611008511A CN 107978644 A CN107978644 A CN 107978644A
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- silicon nitride
- nitride layer
- solar cell
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- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 225
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 225
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 68
- 238000002161 passivation Methods 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000001257 hydrogen Substances 0.000 claims abstract description 35
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 35
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 34
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 230000005684 electric field Effects 0.000 claims abstract description 22
- 239000010408 film Substances 0.000 claims description 78
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 29
- 150000004767 nitrides Chemical class 0.000 claims description 10
- 229910003978 SiClx Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 229920001296 polysiloxane Polymers 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 abstract description 17
- 230000007547 defect Effects 0.000 abstract description 8
- -1 hydrogen ions Chemical class 0.000 abstract description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract 3
- 230000004888 barrier function Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical compound Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000010079 rubber tapping Methods 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Photovoltaic Devices (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention discloses a solar cell, which comprises a substrate, an emitter layer, a back electric field layer, an anti-reflection layer, an aluminum oxide layer, a passivation layer, a front electrode and a back electrode. The emitter layer is located in the substrate and close to the front surface of the substrate. The back electric field layer is positioned in the substrate and close to the back surface of the substrate. The anti-reflection layer is located at the front surface of the substrate. The aluminum oxide layer is located at the back side of the substrate. The passivation layer comprises a first silicon nitride layer, a second silicon nitride layer and a third silicon nitride layer which are arranged in sequence. The ratio of hydrogen content/nitrogen content of the first silicon nitride layer is smaller than that of the second silicon nitride layer. The first silicon nitride layer contacts the aluminum oxide layer, and the nitrogen content of the first silicon nitride layer and the nitrogen content of the third silicon nitride layer are respectively larger than that of the second silicon nitride layer. The hydrogen ion concentration gradient designed by the invention can effectively provide enough hydrogen ions to fill up the defects on the surface of the substrate, thereby effectively passivating the surface.
Description
Technical field
The present invention is related to a kind of solar cell, and has hydrogen in particular to a kind of passivation layer of solar cell
The design of ion concentration gradient.
Background technology
Solar cell is a kind of photoelectric subassembly (photovoltaic device) of energy conversion, and wherein emitter-base bandgap grading is passivated
And back electrode solar cell (PERC：Passivated Emitter Rear Cell) pass enjoyed with its high conversion efficiency
Note.Emitter-base bandgap grading is passivated and back electrode solar cell is compared to the Main Differences of conventional solar cell：Emitter-base bandgap grading is passivated and the back of the body
Electrode solar cell system using passivating technique by positive emitter-base bandgap grading and passivating back, to reduce surface defect.
Specifically, the mode that the back electrode of the solar cell of emitter-base bandgap grading passivation and back electrode is formed, is typically first with thunder
The mode such as penetrate to passivation layer perforate to form electrode contact locations, wire mark non-penetrative aluminium glue either passes through physics then at the back side
Be vapor-deposited (PVD) plated aluminum, and finally with forming electrode after the wire mark elargol co-sintering of front, it is with conventional solar cell in the back of the body
Face is printed and is sintered with aluminium paste whole face, so as to form comprehensive back surface field (BSF：Back-surface field) not
Together.Since emitter-base bandgap grading passivation and the making of back electrode solar cell are only to carry out partially perforation in the back side, can finally be formed
Local back electric field (Local BSF) simultaneously retains the passivation layer of large area.On the other hand, for compared to conventional batteries, emitter-base bandgap grading is blunt
Change and back electrode solar cell adds the area that the passivation layer at its back side is passivated, therefore it is overleaf multiple effectively to reduce carrier
The speed of conjunction.
With reference to figure 1, it shows that the solar cell 9 of a kind of known emitter-base bandgap grading passivation and back electrode includes a conduction type substrate
91st, an emitter layer 92, an anti-reflecting layer 93, a passivation layer 94, a front electrode 95 and a backplate 96.The passivation layer 94 is
Refer to the silicon nitride layer of simple layer.However, the thickness of the silicon nitride layer of the individual layer e.g., about 250nm, too thick silicon nitride layer will
Cause processing time longer.If directly the silicon nitride layer of the individual layer is thinned, and only silicon substrate is carried out with this layer
During passivation, the silicon nitride layer of the simple layer after being thinned possibly can not provide the defects of enough hydrogen ions are to fill up silicon substrate
(dangling bond) and then it can not fully reach surface passivation.
Therefore, it is just in need that a kind of solar cell is provided, it can solve the problems, such as foregoing.
The content of the invention
The purpose of the present invention is to provide a kind of solar cell, its passivation layer has the design of hydrogen ion concentration gradient.
According to above-mentioned purpose, the present invention, which provides a kind of solar cell, includes a substrate, an emitter layer, a back of the body electric field
Layer, an anti-reflecting layer, an alumina layer, a passivation layer, a front electrode and a backplate.The substrate is the first conductivity type,
And with a front and one and the opposite back side in the front.The emitter layer is the second conductivity type, and is located at close in the substrate be somebody's turn to do
At front.The back of the body electric field layer is the first conductivity type, and in the substrate at the back side.The anti-reflecting layer is located at the front
Place.The alumina layer is located at the back side.The passivation layer includes one first silicon nitride layer, one second silicon nitride layer of sequential
And one the 3rd silicon nitride layer.The hydrogen that the ratio of hydrogen content/nitrogen content of first silicon nitride layer is less than second silicon nitride layer contains
The ratio of amount/nitrogen content.First silicon nitride layer contacts the alumina layer, and first silicon nitride layer and the 3rd silicon nitride layer
Nitrogen content be respectively greater than the nitrogen content of second silicon nitride layer.The front electrode passes through the anti-reflecting layer, and contacts the emitter-base bandgap grading
Layer.The backplate passes through the passivation layer and the alumina layer, and contacts the back of the body electric field layer.
The present invention also provides a kind of solar cell include a substrate, an emitter layer, a back of the body electric field layer, an anti-reflecting layer,
One alumina layer, a passivation layer, a front electrode and a backplate.The substrate is the first conductivity type, and with one front and
One with the opposite back side in the front.The emitter layer is the second conductivity type, and in the substrate at the front.The back of the body electric field
Layer is the first conductivity type, and in the substrate at the back side.The anti-reflecting layer is located at the front.The alumina layer position
At the back side.The passivation layer includes one first silicon nitride layer, one second silicon nitride layer and one the 3rd silicon nitride of sequential
Layer.This first and the 3rd the refractive index of silicon nitride layer be respectively less than the refractive index of second silicon nitride layer.First silicon nitride layer connects
Touch the alumina layer.The front electrode passes through the anti-reflecting layer, and contacts the emitter layer.The backplate through the passivation layer and
The alumina layer, and contact the back of the body electric field layer.
The present invention also provides a kind of solar cell include a substrate, an emitter layer, a back of the body electric field layer, an anti-reflecting layer,
One alumina layer, a passivation layer, a front electrode and a backplate.The substrate is the first conductivity type, and with one front and
One with the opposite back side in the front.The emitter layer is the second conductivity type, and in the substrate at the front.The back of the body electric field
Layer is the first conductivity type, and in the substrate at the back side.The anti-reflecting layer is located at the front.The alumina layer position
At the back side.The passivation layer includes one first silicon nitride layer, one second silicon nitride layer and one the 3rd silicon nitride of sequential
Layer.The hydrogen content of first silicon nitride layer and the 3rd silicon nitride layer is respectively less than the hydrogen content of second silicon nitride layer.First nitrogen
The change silicon layer contacts alumina layer.The front electrode passes through the anti-reflecting layer, and contacts the emitter layer.The backplate passes through should
Passivation layer and the alumina layer, and contact the back of the body electric field layer.
Compared to the prior art, if nitride multilayer silicon layer (that is, first to the 3rd silicon nitride of the passivation layer of the present invention
Layer) gross thickness is down to below 250nm (for example, gross thickness is down to 150nm), then and the design of hydrogen ion concentration gradient of the invention is still
The defects of enough hydrogen ions are to fill up substrate surface (dangling bond) can be effectively provided, and then surface passivation can be effectively achieved
Purpose.Alternatively, compared to the prior art, if the nitride multilayer silicon layer gross thickness of the passivation layer of the present invention maintain 250nm (such as
The thickness of first silicon nitride layer, the second silicon nitride layer and the 3rd silicon nitride layer is respectively 10nm, 10nm and 230nm), then due to
The design of the hydrogen ion concentration gradient of the present invention can more fully reach substrate surface passivation, therefore the solar cell of the present invention
Performance (for example, series resistance Rs, short circuit current flow Isc, open-circuit voltage Voc and fill factor, curve factor FF) can be lifted again.
Brief description of the drawings
Fig. 1 is the diagrammatic cross-section of the passivation of existing emitter-base bandgap grading and back electrode solar cell.
Fig. 2 is the diagrammatic cross-section of the solar cell of one embodiment of the invention.
Fig. 3 is the partial cutaway schematic of the solar cell of one embodiment of the invention.
Fig. 4 is the partial cutaway schematic of the solar cell of another embodiment of the present invention.
In figure：
1 solar cell；
11 substrates；
111 fronts；
112 back sides；
112H tappings；
At around 112M openings；
12 emitter layers；
13 anti-reflecting layers；
14 passivation layers；
14 ' passivation layers；
141 first silicon nitride layers；
142 second silicon nitride layers；
1421 first silicon nitride films；
1422 second silicon nitride films；
143 the 3rd silicon nitride layers；
1431 outsides；
144 cushions；
1441 the 3rd silicon nitride films；
1442 the 4th silicon nitride films；
1443 the 5th silicon nitride films；
145 the 4th silicon nitride layers；
146 silicon oxynitride layers；
147 silicon oxide layers；
15 front electrodes；
16 backplates；
17 back of the body electric field layers；
18 alumina layers；
9 solar cells；
91 substrates；
92 emitter layers；
93 anti-reflecting layers；
94 passivation layers；
95 front electrodes；
96 backplates.
Embodiment
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, so that those skilled in the art can be with
It is better understood from the present invention and can be practiced, but illustrated embodiment is not as a limitation of the invention.
With reference to figure 2, it shows the solar cell of one embodiment of the invention.The solar cell 1 include a substrate 11,
One emitter layer 12, one back of the body electric field layer 17, an anti-reflecting layer 13, an alumina layer 18, a passivation layer 14, a front electrode 15 and one
Backplate 16.The substrate 11 is the first conductivity type (such as silicon substrate), and with one positive 111 and one and 111 phase of front
To the back side 112.The emitter layer 12 is the second conductivity type, and in the substrate 12 at the front 111.The back of the body electric field layer
17 be the first conductivity type, and in the substrate 11 at the back side 112.The anti-reflecting layer 13 is located at the front 111.Should
Alumina layer 18 is located at the back side 112.The front electrode 15 passes through the anti-reflecting layer 13, and contacts the emitter layer 12.The back of the body
Face electrode 16 passes through the passivation layer 14 and the alumina layer 18, and contacts the back of the body electric field layer 17.
In the present embodiment, solar cell 1 of the invention can be the solar cell of emitter-base bandgap grading passivation and back electrode
(PERC：Passivated Emitter Rear Cell), only there is heavy doping (such as P+ in corresponding opening 112H
Doping), that is, more slightly higher than substrate 11 (such as P-type conduction type) doping concentration, tapping 112H so is known as local back electricity
Field (LBSF：local back-surface field).In another embodiment, solar cell 1 of the invention can be emitter-base bandgap grading
Solar cell (the PERT that passivation and the back side are spread completely：Passivated Emitter, Rear Totally-
Diffused), opening 112H has heavy doping (such as P++doping), around opening at 112M have doping (such as P+
Doping), that is, both P++ doping and P+ doping higher than substrate 11 (such as P-type conduction type) doping concentration at the same time
In the presence of.
With reference to figure 3, in the present embodiment, which includes one first silicon nitride layer 141, one second of sequential
142 and 1 the 3rd silicon nitride layer 143 of silicon nitride layer.First silicon nitride layer 141 contacts the alumina layer 18.First silicon nitride
Layer 141 refractive index be less than second silicon nitride layer 142 refractive index, and the refractive index of the 3rd silicon nitride layer 143 again smaller than
The refractive index of second silicon nitride layer 142, such as the refractive index of 141 and the 3rd silicon nitride layer 143 of the first silicon nitride layer are small
In 2, and the refractive index of second silicon nitride layer 142 is more than 2.4, can so calculate learn first silicon nitride layer 141 and this
The nitrogen content of three silicon nitride layers 142 is respectively greater than the nitrogen content of second silicon nitride layer 142, that is, first silicon nitride layer 141
And the 3rd the hydrogen content of silicon nitride layer 143 be also respectively smaller than the hydrogen content of second silicon nitride layer 142.Therefore, first nitrogen
The ratio of hydrogen content/nitrogen content of SiClx layer 141 is less than the ratio of hydrogen content/nitrogen content of second silicon nitride layer 142, can shape
Into hydrionic concentration gradient.The design of this hydrogen ion concentration gradient can make hydrogen ion effectively by high second nitridation of concentration
Silicon layer 142 is moved toward the direction of low first silicon nitride layer 141 of concentration, along with substrate 11 (such as silicon substrate) surface
Defect (dangling bond) can also attract hydrogen ion to be moved toward the direction of the substrate 11.In addition, the hydrogen content of the 3rd silicon nitride layer 143/
The ratio of nitrogen content is less than the ratio of hydrogen content/nitrogen content of second silicon nitride layer 142, makees the 3rd silicon nitride layer 143
For hydrogen ion barrier layer.
Compared to the prior art, if nitride multilayer silicon layer (that is, the one 141 silicon nitride of the passivation layer 14 of the present invention
Layer, 142 to the 3rd silicon nitride layer 143 of the second silicon nitride layer) gross thickness is down to below 250nm (for example, gross thickness is down to
150nm), then the design of the hydrogen ion concentration gradient of the present invention remains to effectively provide enough hydrogen ions to fill up substrate surface
The defects of (dangling bond) and then surface passivation can be effectively achieved.Alternatively, compared to the prior art, if the passivation layer 14 of the present invention
Nitride multilayer silicon layer gross thickness maintains 250nm (such as first silicon nitride layer 141, the second silicon nitride layer 142 and the 3rd nitridation
The thickness of silicon layer 143 is respectively 10nm, 10nm and 230nm), then since the design of the hydrogen ion concentration gradient of the present invention can more be filled
Ground is divided to reach substrate surface passivation, therefore the performance of the solar cell of the present invention is (for example, series resistance Rs, short circuit current flow
Isc, open-circuit voltage Voc and fill factor, curve factor FF) it can be lifted again.
With reference to figure 4, in another embodiment, the second silicon nitride layer 142 of the passivation layer 14 ' includes the first silicon nitride film
1421 and second silicon nitride film 1422.The passivation layer 14 ' further includes a cushion 144, which includes the 3rd nitridation
Silicon thin film 1441, the 4th silicon nitride film 1442 and the 5th silicon nitride film 1443.First silicon nitride layer 141, the 3rd nitrogen
SiClx film 1441, first silicon nitride film 1421, the 4th silicon nitride film 1442, second silicon nitride film 1422,
5th silicon nitride film 1443 and 143 sequential of the 3rd silicon nitride layer.
The refractive index of 3rd silicon nitride film 1441, the 4th silicon nitride film 1442 and the 5th silicon nitride film 1443 is small
In the refractive index of 1421 and second silicon nitride film 1422 of the first silicon nitride film.First silicon nitride layer, 141 and the 3rd nitrogen
The refractive index of SiClx layer 143 is less than the 3rd silicon nitride film 1441, the 4th silicon nitride film 1442 and the 5th silicon nitride film
1443 refractive index.For example, the refractive index of 141 and the 3rd silicon nitride layer 143 of the first silicon nitride layer is respectively less than the 1.9, the 3rd
The refractive index of silicon nitride film 1441, the 4th silicon nitride film 1442 and the 5th silicon nitride film 1443 between 1.9 and 2.4 it
Between, and the refractive index of 1421 and second silicon nitride film 1422 of the first silicon nitride film is more than 2.4, can so calculate and learn this
The nitrogen content of first silicon nitride layer 141 and the 3rd silicon nitride layer 142 is more than the cushion 144 (including the 3rd silicon nitride film
1441st, the 4th silicon nitride film 1442 and the 5th silicon nitride film 1443), the cushion 144 (including the 3rd silicon nitride film
1441st, the 4th silicon nitride film 1442 and the 5th silicon nitride film 1443) nitrogen content be more than second silicon nitride layer 142 (bag
Include 1421 and second silicon nitride film 1422 of the first silicon nitride film) nitrogen content；That is, first silicon nitride layer 141 and should
The hydrogen content of 3rd silicon nitride layer 143 is less than the cushion 144 (including the 3rd silicon nitride film 1441, the 4th silicon nitride film
1442 and the 5th silicon nitride film 1443) hydrogen content, the cushion 144 (including the 3rd silicon nitride film the 1441, the 4th nitridation
1442 and the 5th silicon nitride film 1443 of silicon thin film) hydrogen content be less than second silicon nitride layer 142 (including first silicon nitride
1421 and second silicon nitride film 1422 of film) hydrogen content.Therefore, hydrogen content/nitrogen content of first silicon nitride layer 141
Ratio is less than the cushion 144 (including the 3rd silicon nitride film 1421, the 4th silicon nitride film 1442 and the 5th silicon nitride film
1443) ratio of hydrogen content/nitrogen content, the cushion 144 (including the 3rd silicon nitride film 1421 and the 4th silicon nitride film
1442) ratio of hydrogen content/nitrogen content is less than second silicon nitride layer 142 (including first silicon nitride film 1421 and the
Nitride silicon thin film 1422) hydrogen content/nitrogen content ratio, hydrionic concentration gradient can be formed.This hydrogen ion concentration ladder
The design of degree can make hydrogen ion effectively by high second silicon nitride layer 142 of concentration (including first silicon nitride film 1421
And second silicon nitride film 1422) toward the direction movement of low first silicon nitride layer 141 of concentration, along with the 11 (example of substrate
Such as silicon substrate) surface the defects of (dangling bond) can also attract hydrogen ion toward the substrate 11 direction move.In addition, the 3rd silicon nitride
The ratio of hydrogen content/nitrogen content of layer 143 is less than second silicon nitride layer 142 (including first silicon nitride film 1421 and the
Nitride silicon thin film 1422) hydrogen content/nitrogen content ratio, make the 3rd silicon nitride layer 143 be used as hydrogen ion barrier layer.Should
Cushion 144 (including the 3rd silicon nitride film 1441, the 4th silicon nitride film 1442 and the 5th silicon nitride film 1443) conduct
Buffering when mobile.
The passivation layer 14 ' further includes one the 4th silicon nitride layer 145, and the 4th silicon nitride layer 145 is configured at the 3rd nitridation
One outside 1431 of silicon layer 143, and the silicone content of the 4th silicon nitride layer 145 is nitrogenized more than first silicon nitride layer 141, second
The silicone content of silicon layer and the 3rd silicon nitride layer 143.For example, the refractive index of the 4th silicon nitride layer 145 is more than 2.4.4th nitrogen
SiClx layer 145 can be used as the last barrier layer of hydrogen ion.
The passivation layer 14 ' further includes a silicon oxynitride layer 146, which is configured at the 4th nitridation
One outside 1451 of silicon layer 145.The silicon oxynitride layer 146 can be used as glue diffusion barrier (paste diffusion block
layer).The passivation layer 14 ' further includes a such as silicon dioxide layer of silicon oxide layer 147, which is configured at this
Between alumina layer 18 and the back side 112 of the substrate 11.The thickness of the silicon oxide layer 147 can be 1-2nm, and the alumina layer
18 thickness can be 4-8nm.
Compared to prior art, if the nitride multilayer silicon layer of the passivation layer 14 ' of the present invention and silicon oxynitride layer (that is, should
First silicon nitride layer 141, the second silicon nitride layer 142 and the 3rd silicon nitride layer 143, the cushion 144, the 4th silicon nitride layer
145 and the silicon oxynitride layer 146) gross thickness be down to below 250nm, then the design of hydrogen ion concentration gradient of the invention is still
The defects of enough hydrogen ions are to fill up substrate surface (dangling bond) can be effectively provided and then surface passivation can be effectively achieved.Example
Such as, the thickness of first silicon nitride layer 141 is 10nm, first silicon nitride film 1421 of second silicon nitride layer 142 and
Nitride silicon thin film 1422) thickness be 5nm, the thickness of the 3rd silicon nitride layer 143 is 60nm, the of the cushion 144
Three silicon nitride films 1441, the 4th silicon nitride film 1442 and the 5th thin thickness 1443) of silicon nitride are 15nm, the 4th nitrogen
The thickness of SiClx layer 145 is 20nm, and the thickness of the silicon oxynitride layer 146 is 5nm, therefore the multilayer nitrogen of the passivation layer 14 '
SiClx layer and silicon oxynitride layer gross thickness can be down to 150nm.Alternatively, compared to the prior art, if the passivation layer 14 ' of the present invention
Nitride multilayer silicon layer and the gross thickness of silicon oxynitride layer maintain 250nm, then due to the hydrogen ion concentration gradient of the present invention
Design can more fully reach substrate surface passivation, therefore the present invention solar cell performance (for example, series resistance
Rs, short circuit current flow Isc, open-circuit voltage Voc and fill factor, curve factor FF) it can be lifted again.
Embodiment described above is only to absolutely prove preferred embodiment that is of the invention and being lifted, protection model of the invention
Enclose not limited to this.The equivalent substitute or conversion that those skilled in the art are made on the basis of the present invention, in the present invention
Protection domain within.Protection scope of the present invention is subject to claims.
Claims (16)
- A kind of 1. solar cell, it is characterised in that including：One substrate, is the first conductivity type, which has a front and one and the opposite back side in the front；One emitter layer, is the second conductivity type, which is located in the substrate at the front；One back of the body electric field layer, is the first conductivity type, which is located in the substrate at the back side；One anti-reflecting layer, at the front；One alumina layer, at the back side；One passivation layer, including one first silicon nitride layer of sequential, one second silicon nitride layer and one the 3rd silicon nitride layer, its In：The ratio of hydrogen content/nitrogen content of first silicon nitride layer is less than the ratio of hydrogen content/nitrogen content of second silicon nitride layer Value；AndFirst silicon nitride layer contacts the alumina layer, and the nitrogen content of first silicon nitride layer and the 3rd silicon nitride layer is distinguished More than the nitrogen content of second silicon nitride layer；One front electrode, through the anti-reflecting layer, and contacts the emitter layer；AndOne backplate, through the passivation layer and the alumina layer, and contacts the back of the body electric field layer.
- 2. solar cell according to claim 1, it is characterised in that the hydrogen content of wherein first silicon nitride layer is less than The hydrogen content of second silicon nitride layer.
- 3. solar cell according to claim 2, it is characterised in that the hydrogen content of wherein the 3rd silicon nitride layer is also small In the hydrogen content of second silicon nitride layer.
- 4. the solar cell according to claim 1 or 3, it is characterised in that the wherein refractive index of first silicon nitride layer Less than the refractive index of second silicon nitride layer.
- 5. solar cell according to claim 4, it is characterised in that the refractive index of wherein the 3rd silicon nitride layer is also small In the refractive index of second silicon nitride layer.
- 6. solar cell according to claim 5, it is characterised in that wherein first silicon nitride layer and the 3rd silicon nitride The refractive index of layer is respectively less than 2, and the refractive index of second silicon nitride layer is more than 2.4.
- 7. the solar cell according to claim 1 or 3, it is characterised in that wherein：Second silicon nitride layer includes first and second silicon nitride film；The passivation layer further includes a cushion, which includes the 3rd silicon nitride film, the 4th silicon nitride film and the 5th nitrogen SiClx film；AndFirst silicon nitride layer, the 3rd silicon nitride film, first silicon nitride film, the 4th silicon nitride film, this second Silicon nitride film, the 5th silicon nitride film and the 3rd silicon nitride layer sequential.
- 8. solar cell according to claim 7, it is characterised in that wherein the 3rd silicon nitride film, the 4th nitridation The refractive index of silicon thin film and the 5th silicon nitride film is less than the refractive index of first silicon nitride film and the second silicon nitride film.
- 9. solar cell according to claim 8, it is characterised in that wherein first silicon nitride layer and the 3rd silicon nitride The refractive index of layer is less than the refractive index of the 3rd silicon nitride film, the 4th silicon nitride film and the 5th silicon nitride film.
- 10. solar cell according to claim 9, it is characterised in that wherein first silicon nitride layer and the 3rd nitridation The refractive index of silicon layer is respectively less than 1.9, the refractive index of the 3rd silicon nitride film, the 4th silicon nitride film and the 5th silicon nitride film Between 1.9 and 2.4, and the refractive index of first silicon nitride film and the second silicon nitride film is more than 2.4.
- 11. solar cell according to claim 9, it is characterised in that wherein the passivation layer further includes one the 4th nitridation Silicon layer, the 4th silicon nitride layer is configured at an outside of the 3rd silicon nitride layer, and the silicone content of the 4th silicon nitride layer is more than The silicone content of first silicon nitride layer, the second silicon nitride layer and the 3rd silicon nitride layer.
- 12. solar cell according to claim 11, it is characterised in that the refractive index of wherein the 4th silicon nitride layer is big In 2.4.
- 13. solar cell according to claim 11, it is characterised in that wherein the passivation layer further includes a silicon nitrogen oxidation Nitride layer, the silicon oxynitride layer are configured at an outside of the 4th silicon nitride layer.
- 14. solar cell according to claim 13, it is characterised in that wherein the passivation layer further includes a Si oxide Layer, the silicon oxide layer are configured between the alumina layer and the back side of the substrate.
- A kind of 15. solar cell, it is characterised in that including：One substrate, is the first conductivity type, which has a front and one and the opposite back side in the front；One emitter layer, is the second conductivity type, which is located in the substrate at the front；One back of the body electric field layer, is the first conductivity type, which is located in the substrate at the back side；One anti-reflecting layer, at the front；One alumina layer, at the back side；One passivation layer, including one first silicon nitride layer of sequential, one second silicon nitride layer and one the 3rd silicon nitride layer, wherein This first and the 3rd the refractive index of silicon nitride layer be respectively less than the refractive index of second silicon nitride layer, and first silicon nitride layer contacts The alumina layer；One front electrode, through the anti-reflecting layer, and contacts the emitter layer；AndOne backplate, through the passivation layer and the alumina layer, and contacts the back of the body electric field layer.
- A kind of 16. solar cell, it is characterised in that including：One substrate, is the first conductivity type, which has a front and one and the opposite back side in the front；One emitter layer, is the second conductivity type, which is located in the substrate at the front；One back of the body electric field layer, is the first conductivity type, which is located in the substrate at the back side；One anti-reflecting layer, at the front；One alumina layer, at the back side；One passivation layer, including one first silicon nitride layer of sequential, one second silicon nitride layer and one the 3rd silicon nitride layer, wherein The hydrogen content of first silicon nitride layer and the 3rd silicon nitride layer is respectively less than the hydrogen content of second silicon nitride layer, and first nitridation The silicon layer contacts alumina layer；One front electrode, through the anti-reflecting layer, and contacts the emitter layer；AndOne backplate, through the alumina layer and the passivation layer, and contacts the back of the body electric field layer.
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| AU2021235314B1 (en) * | 2021-08-26 | 2023-03-16 | Shanghai Jinko Green Energy Enterprise Management Co., Ltd. | Solar cell, method for producing same and solar cell module |
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| TWI585988B (en) | 2017-06-01 |
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