CN109461782A - P-type back contacted solar cell and preparation method thereof - Google Patents
P-type back contacted solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN109461782A CN109461782A CN201811593694.9A CN201811593694A CN109461782A CN 109461782 A CN109461782 A CN 109461782A CN 201811593694 A CN201811593694 A CN 201811593694A CN 109461782 A CN109461782 A CN 109461782A
- Authority
- CN
- China
- Prior art keywords
- type
- electrode
- type semiconductor
- semiconductor structure
- back side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 165
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 claims abstract description 34
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 239000006117 anti-reflective coating Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims 2
- 238000002161 passivation Methods 0.000 abstract description 23
- 238000006243 chemical reaction Methods 0.000 abstract description 19
- 238000009792 diffusion process Methods 0.000 abstract description 15
- 230000000694 effects Effects 0.000 abstract description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 7
- 239000011574 phosphorus Substances 0.000 abstract description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052796 boron Inorganic materials 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 48
- 238000000034 method Methods 0.000 description 12
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000000750 progressive effect Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 241000407429 Maja Species 0.000 description 1
- 238000003854 Surface Print Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of p-type back contacted solar cells and preparation method thereof, multiple N+ type semiconductor structures are set on the back side of P-type semiconductor substrate, first electrode is set between N+ type semiconductor structure, metallic atom in the first electrode is diffused into the back side, form P+ semiconductor structure, without carrying out phosphorus diffusion and boron diffusion to P-type semiconductor substrate, the N+ type semiconductor structure and P+ semiconductor structure being arranged alternately can overleaf be formed, manufacture craft is simple, low manufacture cost.First electrode and second electrode are arranged at the back side, no setting is required in front electrode is arranged electrode reflection problems caused by light so as to avoid front, improves the utilization rate of light, and then improve photoelectric conversion efficiency.And it is located at the N+ type semiconductor structure on the back side relative to tradition by diffuseing to form in the P+ doped region in the back side, there is better surface passivation effect, can be further improved photoelectric conversion efficiency.
Description
Technical field
The present invention relates to technical field of solar batteries, more specifically, being related to a kind of p-type back contacted solar cell
And preparation method thereof.
Background technique
With the continuous development of science and technology, more and more electronic equipments are widely used in people's daily life
In, huge convenience is brought for daily life and work, becomes the indispensable important tool of current people.Electricity
It can be the precondition for maintaining electronic equipment to work normally.With being constantly progressive for human society, various electronic equipments are to electric energy
Demand it is also increasing, power shortage caused by energy crisis is that current people have to face great difficult problem.
Solar battery can use solar power generation, be an important development direction for solving energy crisis.Routine is too
Positive energy battery is respectively formed P+ doped region and N+ doped region in the opposite front and back of semiconductor substrate, then in doped region
Surface forms passivation layer and metal electrode.Front is light-receiving surface, and positive metal electrode will certainly reflect a part of incident front
Light, cause the utilization rate of light to reduce, the photoelectric conversion efficiency of battery is lower.
Summary of the invention
In view of this, technical solution of the present invention provides a kind of p-type back contacted solar cell and preparation method thereof, mention
High photoelectric conversion efficiency.
To achieve the goals above, the invention provides the following technical scheme:
A kind of p-type back contacted solar cell, the p-type back contacted solar cell include:
P-type semiconductor substrate, the P-type semiconductor substrate have opposite front and the back side；
Multiple N+ type semiconductor structures on the back side are set, and the N+ type semiconductor structure is intervally arranged；
First electrode on the back side is set, and the first electrode is between the N+ type semiconductor structure, institute
It states the metallic atom in first electrode to be diffused into the back side, forms P+ semiconductor structure；
The second electrode that the N+ type semiconductor structure deviates from P-type semiconductor one side of substrate surface is set；
Wherein, on the direction for being parallel to the back side, the N+ type semiconductor structure and the P+ semiconductor structure are handed over
For arrangement.
Preferably, in aforementioned p-type back contacted solar cell, the N+ type semiconductor structure is N-type heavy doping
Polysilicon layer or amorphous silicon layer for N-type heavy doping.
Preferably, in aforementioned p-type back contacted solar cell, between the N+ type semiconductor structure and the back side
It is provided with tunnel oxide.
Preferably, in aforementioned p-type back contacted solar cell, the thickness range of the tunnel oxide is 0.5nm-
2nm。
Preferably, in aforementioned p-type back contacted solar cell, the first electrode and the rear-face contact.
Preferably, in aforementioned p-type back contacted solar cell, the first electrode is Al electrode.
Preferably, in aforementioned p-type back contacted solar cell, further includes: the covering positive front passivation subtracts
The passivating back antireflective coating of reflectance coating and covering the N+ type semiconductor structure and the P+ semiconductor structure；
Wherein, the passivating back antireflective coating exposes the first electrode and the second electrode.
The present invention also provides a kind of production methods, for making p-type back contacted solar described in any of the above embodiments
Battery, which is characterized in that the production method includes:
A P-type semiconductor substrate is provided, the P-type semiconductor substrate has opposite front and the back side；
Multiple N+ type semiconductor structures are formed at the back side, the N+ type semiconductor structure is intervally arranged；
Prepare first electrode and second electrode；First electrode is formed at the back side, the first electrode is located at the N
Between+type semiconductor structure, the metallic atom in the first electrode is diffused into the back side, forms P+ semiconductor structure；
Second electrode is formed away from P-type semiconductor one side of substrate surface in the N+ type semiconductor structure；
Wherein, on the direction for being parallel to the back side, the N+ type semiconductor structure and the P+ semiconductor structure are handed over
For arrangement.
Preferably, described to form multiple N+ type semiconductor structures at the back side and include: in above-mentioned production method
Tunnel oxide is formed at the back side；
The polysilicon layer of N-type heavy doping is formed in the tunnel oxide layer surface or is the amorphous silicon layer of N-type heavy doping.
Preferably, in above-mentioned production method, the thickness range of the tunnel oxide is 0.5nm-2nm.
As can be seen from the above description, the p-type back contacted solar cell and its production side that technical solution of the present invention provides
In method, multiple N+ type semiconductor structures are set on the back side of P-type semiconductor substrate, is arranged between N+ type semiconductor structure
One electrode, the metallic atom in the first electrode are diffused into the back side, form P+ semiconductor structure, without to p-type half
Conductor substrate carries out phosphorus diffusion and boron diffusion, can overleaf form the N+ type semiconductor structure and P+ semiconductor being arranged alternately
Structure, manufacture craft is simple, low manufacture cost.First electrode and second electrode are arranged at the back side, front is used as light
Face, no setting is required electrode are arranged electrode reflection problems caused by light so as to avoid front, improve the utilization rate of light, into
And improve photoelectric conversion efficiency.And it is located at the N+ type semiconductor structure on the back side relative to tradition by diffuseing to form in back
P+ doped region in face has better surface passivation effect, can be further improved photoelectric conversion efficiency.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of structural schematic diagram of p-type back contacted solar cell provided in an embodiment of the present invention；
Fig. 2 is a kind of flow diagram of p-type back contacted solar cell production method provided in an embodiment of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As stated in the background art, conventional solar battery is respectively formed P+ in the opposite front and back of semiconductor substrate
Then doped region and N+ doped region form passivation layer and metal electrode on doped region surface.Front is light-receiving surface, positive metal
Electrode potential must reflect a part of incident positive light, cause the utilization rate of light to reduce, the photoelectric conversion efficiency of battery is lower.
P+ doped region and N+ doped region are arranged in the back side of semiconductor substrate by back contacted solar cell, will be electric
Pole is arranged at the back side, and as light-receiving surface, light-receiving surface is electrodeless to be blocked in the front of semiconductor substrate, can be to avoid due to positive mask
There are light reflection problems caused by electrode, improve light utilization efficiency, effectively increase the short circuit current of battery, and then improves light
Photoelectric transformation efficiency.
In back contacted solar cell, since PN junction is located at the back side, the generation of photo-generated carrier mainly near front,
Carrier needs to reach the back side across entire semiconductor substrate, therefore passivating back effect is to influence back contacted solar cell light
One important parameter of photoelectric transformation efficiency.
Currently, conventional back contact solar cell is to be arranged alternately P+ doped region and N+ in the back side of N-type semiconductor
Then passivation layer and metal electrode is overleaf arranged in doped region.But there are the back sides for conventional N-type back contact type solar battery
The bad problem of passivation effect, and passivation effect difference will affect hidden open-circuit voltage, dark saturation current density and the short-wave band of battery
The performances such as internal quantum efficiency, and then influence photoelectric conversion efficiency.And generally use n type single crystal silicon as semiconductor substrate,
Relative to p type single crystal silicon substrate higher cost.And conventional back contact type solar battery needs to carry out boron diffusion and phosphorus diffusion, with
P+ doped region and N+ doped region, complex manufacturing technology, and the technological parameter of back side doped region not easy to control are formed in overleaf.Together
When, High temperature diffusion can make the undesirable elements such as defect in substrate, dislocation be released and expand twice, influence the photoelectricity of battery
Transfer efficiency.Therefore conventional back contact type solar cell making process is complicated, low manufacture cost, and photoelectric conversion efficiency need into
One step improves.
To solve the above problems, the embodiment of the invention provides a kind of p-type back contacted solar cell and its production sides
Multiple N+ type semiconductor structures are arranged in method on the back side of P-type semiconductor substrate, are arranged first between N+ type semiconductor structure
Electrode, the metallic atom in the first electrode are diffused into the back side, P+ semiconductor structure are formed, without partly leading to p-type
Body substrate carries out phosphorus diffusion and boron diffusion, can overleaf form the N+ type semiconductor structure and P+ semiconductor junction being arranged alternately
Structure, manufacture craft is simple, low manufacture cost.
First electrode and second electrode are arranged at the back side, front is used as light-receiving surface, no setting is required electrode, to keep away
Exempt from positive setting electrode reflection problems caused by light, improves the utilization rate of light, and then improve photoelectric conversion efficiency.
P-type semiconductor substrate is used simultaneously, and there is lower cost of manufacture relative to n type single crystal silicon substrate, substantially reduce
The cost of manufacture of battery.And it is located at the N+ type semiconductor structure on the back side relative to tradition by diffuseing to form in the back side
P+ doped region, have better surface passivation effect, can be further improved photoelectric conversion efficiency.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
With reference to Fig. 1, Fig. 1 is a kind of structural schematic diagram of p-type back contacted solar cell provided in an embodiment of the present invention,
The p-type back contacted solar cell includes: P-type semiconductor substrate 11, and the P-type semiconductor substrate 11 has opposite front
111 and the back side 112；Multiple N+ type semiconductor structures 12 on the back side 112, the N+ type semiconductor structure 12 are set
It is intervally arranged；First electrode 13 on the back side 112 is set, and the first electrode 13 is located at the N+ type semiconductor structure
Between 12, do not contacted between the first electrode 13 and the N+ type semiconductor structure 12, the metal in the first electrode 13
Atom is diffused into the back side 112, forms P+ semiconductor structure 14；Setting is in the N+ type semiconductor structure 12 away from described
The second electrode 15 of 11 1 side surface of P-type semiconductor substrate；Wherein, on the direction for being parallel to the back side 112, the N+ type
Semiconductor structure 12 is arranged alternately with the P+ semiconductor structure 14.P-type semiconductor substrate 11 is P-type crystal silicon, such as can be with
For p type single crystal silicon.
Optionally, the N+ type semiconductor structure 12 is N-type heavily doped semiconductor layer, can be such as the more of N-type heavy doping
Crystal silicon layer or amorphous silicon layer for N-type heavy doping.The N+ directly can be formed on the back side 112 by epitaxy technique
Type semiconductor structure 12, without overleaf 112 interior progress phosphorus diffusions.It can be carved by laser ablation or dry etching or wet process
The techniques such as erosion or mechanical scratching are formed in N-type heavily doped semiconductor layer and are open, and expose P-type semiconductor substrate 11, and then directly exist
The back side 112 of P-type semiconductor substrate 11 forms first electrode 13, so that the first electrode 13 is contacted with the back side 112, with
It is diffused into the back side 112 convenient for metallic atom in first electrode 13, forms P+ semiconductor structure 14.
As shown in Figure 1, being provided with tunnel oxide 16 between the N+ type semiconductor structure 12 and the back side 112.Tunnel
Wearing oxide layer 16 can be silica.The thickness range of the tunnel oxide 16 is 0.5nm-2nm.By a layer thickness compared with
Thin tunnel oxide 16 can make how sub- electron tunneling in P-type semiconductor substrate 11 enter N+ type semiconductor structure 12, and
It can stop less sub- hole-recombination, promote electronics to transmit in N+ type semiconductor structure 12, collected by second electrode, to greatly drop
Low second electrode 15 contacts recombination current, improves the open circuit and short circuit current of battery, and then improve photoelectric conversion efficiency.
Wherein, first electrode 13 and second electrode 15 can be metal electrode.P-type back contacts described in the embodiment of the present invention
In type solar battery, the first electrode is Al electrode.Al atom can be spread in the back side 112, form P+ semiconductor junction
Structure 14.P+ semiconductor structure 14 is the p-type heavily doped region in the back side 112.The second electrode 15 can be Ag electrode.
16 Ohmic contact of first electrode 13 and tunnel oxide, second electrode 15 and 112 Ohmic contact of the back side.
Described positive 111 be the flannelette that can reduce reflection.Described positive 111 are also covered with passivation layer 18, the passivation
Layer 18 is metal oxide layer, such as can be Al3O2, preferable front passivation effect not only may be implemented in such passivation layer 18
Fruit, the metallic atom in passivation layer 18 can also be diffused into front 111 by annealing, form N+ doped region, i.e. shape
At N-type heavily doped region, such as Al3O2N+ doped region can also be formed in front 111 in annealing process, formation has
Photoelectric conversion efficiency is improved in the positive field of photoelectric converting function.
As shown in Figure 1, the p-type back contacted solar cell further include: the front passivation of covering described positive 111 subtracts
The passivating back antireflective coating 19 of reflectance coating 17 and covering the N+ type semiconductor structure and the P+ semiconductor structure.Front
Passivated reflection reducing penetrates film 17 and passivating back antireflective coating 19 all can be SiNx film layer.Wherein, the passivating back antireflective
Film 19 exposes the first electrode 13 and the second electrode 15.The N+ type semiconductor structure 12 at the back side 112 can be p-type half
Better surface passivation effect is brought at the back side 112 of conductor substrate 11, is subtracted in conjunction with the passivation layer 18 in front 111 and front passivation
The passivation effect of reflectance coating 17 can make battery have higher open-circuit voltage and photoelectric conversion efficiency.
Overleaf 112 it is provided with tunnel oxide 16 and passivating back antireflective coating 19, can be formed with overleaf 112
Topcon structure (tunnel oxide passivating structure) improves photoelectric conversion efficiency using Topcon structure.And laser can be passed through
N+ type semiconductor layer is separated into multiple N+ type semiconductor structures 12 by the modes such as etching, can also be in two N+ type semiconductor structures
P+ semiconductor structure 14 is formed in the back side 112 between 12, and then forms the N+ type semiconductor structure 12 being arranged alternately and P+ half
Conductor structure 14.
In p-type back contacted solar cell described in the embodiment of the present invention, using P-type semiconductor substrate 11, relative to N-type
Semiconductor substrate has lower cost.And N+ type semiconductor structure 12, N+ type semiconductor structure 12 are overleaf formed on 112
Deviate from the side of P-type semiconductor substrate 11 positioned at the back side 112, first electrode 13 is overleaf set on 112, first electrode 13 is located at
The back side 112 deviates from the side of P-type semiconductor substrate 11, is diffused into the back side 112 by metallic atom in first electrode 13 and forms P
+ semiconductor structure 14, without carrying out phosphorus diffusion and boron diffusion, it can form N+ type semiconductor structure 12 and P+ semiconductor structure
14, formation process is simple, low manufacture cost, and convenient for the production of control N+ type semiconductor structure 12 and P+ semiconductor structure 14
Parameter.N+ type semiconductor structure 12 is set simultaneously and is located at the side that the back side 112 deviates from P-type semiconductor substrate 11, overleaf 112 is set
Tunnel oxide 16 is set, can make the back side 112 that there is better passivation effect, improves photoelectric conversion efficiency.As it can be seen that of the invention
P-type back contacted solar cell described in embodiment has higher open-circuit voltage and photoelectric conversion efficiency, and the cost of raw material
Low, manufacturing process simply and readily controls, and quick industry volume production may be implemented.
Based on the above embodiment, another embodiment of the present invention additionally provides a kind of production method, for making above-mentioned implementation
P-type back contacted solar cell described in example, the production method is as shown in Fig. 2, Fig. 2 is provided in an embodiment of the present invention one
The flow diagram of kind p-type back contacted solar cell production method, the production method include:
Step S11: providing a P-type semiconductor substrate, and the P-type semiconductor substrate has opposite front and the back side.
In the step, P-type semiconductor substrate can use p type single crystal silicon substrate.The resistivity of P-type semiconductor substrate can be with
For 0.3 Ω cm-1 Ω cm, thickness can be 50 μm -200 μm.The surface damage layer of P-type semiconductor substrate is removed first, so
Structuring processing is being carried out to its surface afterwards, in the suede structure of its positive formation rule.During being somebody's turn to do, P-type semiconductor substrate
Reducing thickness control in 0.3g-0.7g, the corresponding thickness range that removal is thinned is 6 μm -14 microns, frontside reflectivity control after making herbs into wool
System is in 8%-15%.
In order to avoid atom is around front is plated to when forming backside structure for subsequent process steps, after completing making herbs into wool, in front
Prepare protective layer.Protective layer can be silicon dioxide layer, and thickness control is in 100nm-200nm.High-temperature thermal oxidation side can be used
Method direct oxidation front forms the protective layer, or deposits the protective layer in front by PECVD deposition method.
Step S12: multiple N+ type semiconductor structures are formed at the back side, the N+ type semiconductor structure is intervally arranged.
In the step, it is described the back side formed multiple N+ type semiconductor structures include: the back side formed tunnelling
Oxide layer, the thickness control of tunnel oxide is in 0.5nm-2nm；The half of N-type heavy doping is formed in the tunnel oxide layer surface
Conductor layer, the N-type heavily doped semiconductor layer can be the polysilicon layer of N-type heavy doping or be N-type heavy doping amorphous silicon layer.
Optionally, the thickness range of the tunnel oxide is 0.5nm-2nm.
After forming the N-type heavily doped semiconductor layer, positive protective layer is removed, and made annealing treatment.Firstly, passing through
The HF solution of 5%-15% removes positive protective layer, is then made annealing treatment under the conditions of 850 DEG C -950 DEG C of temperature, controls
The sheet resistance of the N-type heavily doped semiconductor layer is 20 Ω/ -100 Ω/ after system annealing, and junction depth is 0.2 μm -1.5 μm.The N-type weight
Doping semiconductor layer is used to form N+ semiconductor structure.After completing annealing, passivated reflection reducing is formed in front and back and penetrates film, it can be with
Passivation layer first is formed in front, which can be Al3O2Film layer, Al3O2Film layer passes through ALD (atomic layer deposition) technique system
Standby, thicknesses of layers is controlled in 3nm-8nm, if preparing Al using Maia equipment3O2Film layer, thicknesses of layers are controlled in 20nm-
30nm。
After forming above-mentioned passivation layer, front passivated reflection reducing is prepared respectively and penetrates layer and passivating back antireflection layer, specifically,
In Al3O2Film surface forms SiNx film layer, with a thickness of 75nm-85nm, refractive index 2.0-2.1, N-type heavy doping overleaf
Semiconductor layer surface prepares SiNx film layer, with a thickness of 95nm-120nm, refractive index 2.0-2.2.Later, pass through laser slotting shape
At opening, which is separated into multiple N+ semiconductor structures.Opening width is controlled in 60 μm of -120 μ
M removes the tunnel oxide, N-type heavily doped semiconductor layer and passivating back antireflection layer of slot area, exposes p-type and partly leads
The back side of body layer.
Step S13: preparation first electrode and second electrode.
First electrode is formed at the back side, the first electrode is between the N+ type semiconductor structure, and described the
Metallic atom in one electrode is diffused into the back side, forms P+ semiconductor structure.Deviate from the N+ type semiconductor structure
P-type semiconductor one side of substrate surface forms second electrode.Wherein, on the direction for being parallel to the back side, the N+ type
Semiconductor structure is arranged alternately with the P+ semiconductor structure.
In the step, the surface printing ag paste electrode line of present N+ semiconductor structure, as second electrode, line width width control
System prints aluminium paste electrode wires at 35 μm -45 μm in slot area, and as first electrode, line width is controlled at 40 μm -100 μm, the
One electrode be located at fluting in and with fluting edge it is contactless, avoid P+ semiconductor structure from being connected with N+ semiconductor structure, it is laggard
The diffusion of electrode ohmic contact and Al atom is realized in row sintering, overleaf forms P+ semiconductor structure.
It should be noted that in the embodiment of the present invention, each numberical range be include endpoint value.N+ semiconductor structure and
The corresponding doping concentration of P+ semiconductor structure is all larger than the concentration of P-type semiconductor substrate, and the specific doping concentration of three can basis
Demand setting, is not specifically limited herein.
Production method described in the embodiment of the present invention is used to make p-type back contacted solar cell described in above-described embodiment,
Multiple N+ type semiconductor structures are set on the back side of P-type semiconductor substrate, the first electricity is set between N+ type semiconductor structure
Pole, the metallic atom in the first electrode are diffused into the back side, form P+ semiconductor structure, without to P-type semiconductor
Substrate carries out phosphorus diffusion and boron diffusion, can overleaf form the N+ type semiconductor structure and P+ semiconductor junction being arranged alternately
Structure, manufacture craft is simple, low manufacture cost.First electrode and second electrode are arranged at the back side, front is used as light-receiving surface,
No setting is required electrode is arranged electrode reflection problems caused by light so as to avoid front, improves the utilization rate of light, Jin Erti
High photoelectric conversion efficiency.P-type semiconductor substrate is used simultaneously, and there is lower cost of manufacture relative to n type single crystal silicon substrate,
Greatly reduce the cost of manufacture of battery.And it is located at the N+ type semiconductor structure on the back side relative to tradition by diffuseing to form
In the P+ doped region in the back side, there is better surface passivation effect, can be further improved photoelectric conversion efficiency.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.
It should also be noted that, herein, relational terms such as first and second and the like are used merely to one
Entity or operation are distinguished with another entity or operation, without necessarily requiring or implying between these entities or operation
There are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant are intended to contain
Lid non-exclusive inclusion, so that article or equipment including a series of elements not only include those elements, but also
It including other elements that are not explicitly listed, or further include for this article or the intrinsic element of equipment.Do not having
In the case where more limitations, the element that is limited by sentence "including a ...", it is not excluded that in the article including above-mentioned element
Or there is also other identical elements in equipment.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (10)
1. a kind of p-type back contacted solar cell, which is characterized in that the p-type back contacted solar cell includes:
P-type semiconductor substrate, the P-type semiconductor substrate have opposite front and the back side；
Multiple N+ type semiconductor structures on the back side are set, and the N+ type semiconductor structure is intervally arranged；
First electrode on the back side is set, the first electrode is between the N+ type semiconductor structure, and described
Metallic atom in one electrode is diffused into the back side, forms P+ semiconductor structure；
The second electrode that the N+ type semiconductor structure deviates from P-type semiconductor one side of substrate surface is set；
Wherein, on the direction for being parallel to the back side, the N+ type semiconductor structure replaces row with the P+ semiconductor structure
Cloth.
2. p-type back contacted solar cell according to claim 1, which is characterized in that the N+ type semiconductor structure
Be the polysilicon layer of N-type heavy doping or be N-type heavy doping amorphous silicon layer.
3. p-type back contacted solar cell according to claim 1, which is characterized in that the N+ type semiconductor structure
Tunnel oxide is provided between the back side.
4. p-type back contacted solar cell according to claim 3, which is characterized in that the thickness of the tunnel oxide
Spending range is 0.5nm-2nm.
5. p-type back contacted solar cell according to claim 1, which is characterized in that the first electrode with it is described
Rear-face contact.
6. p-type back contacted solar cell according to claim 1, which is characterized in that the first electrode is Al electricity
Pole.
7. p-type back contacted solar cell according to claim 1, which is characterized in that further include: cover the front
Front passivated reflection reducing penetrate the passivating back anti-reflection of film and covering the N+ type semiconductor structure and the P+ semiconductor structure
Penetrate film；
Wherein, the passivating back antireflective coating exposes the first electrode and the second electrode.
8. a kind of production method, for making such as described in any item p-type back contacted solar cells of claim 1-7,
It is characterized in that, the production method includes:
A P-type semiconductor substrate is provided, the P-type semiconductor substrate has opposite front and the back side；
Multiple N+ type semiconductor structures are formed at the back side, the N+ type semiconductor structure is intervally arranged；
Prepare first electrode and second electrode；First electrode is formed at the back side, the first electrode is located at the N+ type
Between semiconductor structure, the metallic atom in the first electrode is diffused into the back side, forms P+ semiconductor structure；Institute
It states N+ type semiconductor structure and forms second electrode away from P-type semiconductor one side of substrate surface；
Wherein, on the direction for being parallel to the back side, the N+ type semiconductor structure replaces row with the P+ semiconductor structure
Cloth.
9. production method according to claim 8, which is characterized in that described to form multiple N+ type semiconductors at the back side
Structure includes:
Tunnel oxide is formed at the back side；
The polysilicon layer of N-type heavy doping is formed in the tunnel oxide layer surface or is the amorphous silicon layer of N-type heavy doping.
10. manufacturing method according to claim 9, which is characterized in that the thickness range of the tunnel oxide is
0.5nm-2nm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811593694.9A CN109461782A (en) | 2018-12-25 | 2018-12-25 | P-type back contacted solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811593694.9A CN109461782A (en) | 2018-12-25 | 2018-12-25 | P-type back contacted solar cell and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109461782A true CN109461782A (en) | 2019-03-12 |
Family
ID=65614828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811593694.9A Pending CN109461782A (en) | 2018-12-25 | 2018-12-25 | P-type back contacted solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109461782A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109980051A (en) * | 2019-04-29 | 2019-07-05 | 浙江晶科能源有限公司 | The manufacturing system and method for the full back contacts crystal silicon battery of p-type |
| CN110197855A (en) * | 2019-05-29 | 2019-09-03 | 西安理工大学 | For Topcon battery production poly-Si around plating minimizing technology |
| CN113611755A (en) * | 2021-08-06 | 2021-11-05 | 无锡琨圣智能装备股份有限公司 | Local passivation contact IBC battery structure and preparation method thereof |
| CN114361268A (en) * | 2021-12-29 | 2022-04-15 | 中国建材国际工程集团有限公司 | Back contact CdTe solar cell and manufacturing method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100084009A1 (en) * | 2007-03-16 | 2010-04-08 | Bp Corporation North America Inc. | Solar Cells |
| CN102763225A (en) * | 2009-12-09 | 2012-10-31 | 速力斯公司 | High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using semiconductor wafers |
| CN105702797A (en) * | 2014-11-27 | 2016-06-22 | 上海晶玺电子科技有限公司 | Manufacturing method of double-face battery |
| CN106229352A (en) * | 2016-09-06 | 2016-12-14 | 浙江晶科能源有限公司 | A kind of IBC structure solaode and preparation method thereof |
| KR101823597B1 (en) * | 2016-07-21 | 2018-01-30 | 엘지전자 주식회사 | Solar cell and manufacturing method thereof |
| CN108110065A (en) * | 2018-01-24 | 2018-06-01 | 泰州中来光电科技有限公司 | A kind of back contact solar cell and preparation method thereof |
| CN108666379A (en) * | 2018-07-11 | 2018-10-16 | 泰州隆基乐叶光伏科技有限公司 | A kind of p-type back contacts solar cell and preparation method thereof |
| CN209087883U (en) * | 2018-12-25 | 2019-07-09 | 浙江晶科能源有限公司 | P-type back contacted solar cell |
-
2018
- 2018-12-25 CN CN201811593694.9A patent/CN109461782A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100084009A1 (en) * | 2007-03-16 | 2010-04-08 | Bp Corporation North America Inc. | Solar Cells |
| CN102763225A (en) * | 2009-12-09 | 2012-10-31 | 速力斯公司 | High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using semiconductor wafers |
| CN105702797A (en) * | 2014-11-27 | 2016-06-22 | 上海晶玺电子科技有限公司 | Manufacturing method of double-face battery |
| KR101823597B1 (en) * | 2016-07-21 | 2018-01-30 | 엘지전자 주식회사 | Solar cell and manufacturing method thereof |
| CN106229352A (en) * | 2016-09-06 | 2016-12-14 | 浙江晶科能源有限公司 | A kind of IBC structure solaode and preparation method thereof |
| CN108110065A (en) * | 2018-01-24 | 2018-06-01 | 泰州中来光电科技有限公司 | A kind of back contact solar cell and preparation method thereof |
| CN108666379A (en) * | 2018-07-11 | 2018-10-16 | 泰州隆基乐叶光伏科技有限公司 | A kind of p-type back contacts solar cell and preparation method thereof |
| CN209087883U (en) * | 2018-12-25 | 2019-07-09 | 浙江晶科能源有限公司 | P-type back contacted solar cell |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109980051A (en) * | 2019-04-29 | 2019-07-05 | 浙江晶科能源有限公司 | The manufacturing system and method for the full back contacts crystal silicon battery of p-type |
| CN110197855A (en) * | 2019-05-29 | 2019-09-03 | 西安理工大学 | For Topcon battery production poly-Si around plating minimizing technology |
| CN113611755A (en) * | 2021-08-06 | 2021-11-05 | 无锡琨圣智能装备股份有限公司 | Local passivation contact IBC battery structure and preparation method thereof |
| CN114361268A (en) * | 2021-12-29 | 2022-04-15 | 中国建材国际工程集团有限公司 | Back contact CdTe solar cell and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Metz et al. | Industrial high performance crystalline silicon solar cells and modules based on rear surface passivation technology | |
| WO2023045347A1 (en) | Back-contact cell and manufacturing method therefor | |
| CN209087883U (en) | P-type back contacted solar cell | |
| CN109728103B (en) | Solar cell | |
| JP5302414B2 (en) | Solar cell and manufacturing method thereof | |
| US8377734B2 (en) | Method for manufacturing solar battery cell | |
| CN109461782A (en) | P-type back contacted solar cell and preparation method thereof | |
| CN102623517B (en) | Back contact type crystalline silicon solar cell and production method thereof | |
| CN113345970A (en) | P-type back contact type crystalline silicon solar cell, preparation method and cell assembly | |
| US20100243042A1 (en) | High-efficiency photovoltaic cells | |
| WO2015043028A1 (en) | Local aluminum back surface field solar battery with two light-pervious surfaces, and preparation method therefor | |
| CN110634964B (en) | Efficient crystalline silicon solar cell and preparation method thereof | |
| CN110828583A (en) | Crystalline silicon solar cell with locally passivated and contacted front surface and preparation method thereof | |
| CN109585578A (en) | A kind of back junction solar battery and preparation method thereof | |
| CN102725854B (en) | Manufacture the method for photovoltaic cell, consequent photovoltaic cell and application thereof | |
| CN209471975U (en) | A kind of back junction solar battery | |
| CN110690301A (en) | Double-junction laminated battery and preparation method thereof | |
| KR101878397B1 (en) | Solar cell and method for fabricating the same | |
| Chong et al. | High-efficiency, laser grooved, buried contact silicon solar cells | |
| JP2010130023A (en) | Solar cell and method of manufacturing the same | |
| CN113284982B (en) | Processing technology of IBC battery with passivation contact structure | |
| CN111063760B (en) | Preparation process of solar cell | |
| WO2011074280A1 (en) | Photovoltaic device and method for preparation thereof | |
| JP2009049443A (en) | Solar battery and manufacturing method of same | |
| KR20150045801A (en) | Solar cell and method for manufacutring the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |