CN108666379A - A kind of p-type back contacts solar cell and preparation method thereof - Google Patents
A kind of p-type back contacts solar cell and preparation method thereof Download PDFInfo
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- CN108666379A CN108666379A CN201810760069.2A CN201810760069A CN108666379A CN 108666379 A CN108666379 A CN 108666379A CN 201810760069 A CN201810760069 A CN 201810760069A CN 108666379 A CN108666379 A CN 108666379A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000002161 passivation Methods 0.000 claims abstract description 29
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 15
- 238000009826 distribution Methods 0.000 claims abstract description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 39
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 230000005611 electricity Effects 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 11
- 239000004411 aluminium Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 229910000632 Alusil Inorganic materials 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000011267 electrode slurry Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000004615 ingredient Substances 0.000 claims description 3
- 239000013081 microcrystal Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 31
- 238000000151 deposition Methods 0.000 description 17
- 230000008021 deposition Effects 0.000 description 17
- 238000004140 cleaning Methods 0.000 description 14
- 239000000243 solution Substances 0.000 description 14
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000012266 salt solution Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- -1 tetramethyl hydroxide Chemical compound 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 1
- 229940037003 alum Drugs 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The present invention relates to a kind of p-type back contacts solar cells and preparation method thereof, including：Front passivation and antireflective coating, p-type silicon substrate, passivating back tunnel layer, N-shaped doping film layer, backside passivation film and battery electrode；The N-shaped doping film layer local area distribution is overleaf passivated on tunnel layer；The N-shaped doping film layer and the p-type area of p-type silicon backside of substrate are staggered in finger-like cross modal, and wherein N-shaped doping film layer includes N-shaped pass-through zone and N-shaped vertical area, and the p-type area includes p-type pass-through zone and p-type vertical area；N-shaped pass-through zone and p-type pass-through zone are mutually parallel；The N-shaped vertical area and N-shaped pass-through zone are mutually perpendicular to and connect；The p-type vertical area and p-type pass-through zone are mutually perpendicular to and connect；On N-shaped pass-through zone direction, the N-shaped vertical area and p-type vertical area are staggered；The present invention can improve reliable sex expression of the battery in later product, reduce the technology difficulty of battery component.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of p-type back contacts solar cell and its preparation side
Method.
Background technology
Currently, gradually exhausting with fossil energy, for solar cell as new energy substitution scheme, use is more and more wider
It is general.Solar cell is the device that the luminous energy of the sun is converted to electric energy.Solar cell generates carrier using photogenic voltage principle,
Then carrier is drawn using electrode, to be conducive to efficiently use electric energy.
Back contact battery, i.e. back contact batteries, wherein finger-like intersect back contacts solar cell and are also known as IBC electricity
Pond.IBC full name are that Interdigitated back contact finger-like intersects back contacts.The feature of IBC battery maximums is transmitting
Pole and metal contact are all in the back side of battery, the influence that the no metal electrode in front blocks, therefore with higher short circuit electricity
Jsc is flowed, while the back side can allow wider metal grid lines to reduce series resistance Rs to improve fill factor FF；And this
The unobstructed battery in front not only high conversion efficiency is planted, but also seems more attractive, meanwhile, the component of all back-contact electrodes is easier to fill
Match.IBC batteries are current one of the technique directions for realizing high-efficiency crystal silicon cell.
Finger-like used at present intersects back contacts solar cell usually using N-shaped piece as base material, and overleaf
Usually using silver paste, therefore when preparing IBC batteries, need to carry out mixing for higher concentration to the region of emitter and back surface field
It is miscellaneous, it could preferably to form electrode contact during subsequent technology for preparing electrode, cost is higher.And due to needing
The doping process process of different doping types at least twice is carried out, technological process is longer, is especially mixed in progress p-type in silicon chip
When miscellaneous, higher temperature and time is needed, the minority carrier life time of p-type silicon substrate (1) is caused to bring larger negative effect, and
Extra band carrys out edge pn-junction and is difficult to remove, and increases the complexity of technique, extends technological process, more not to industrialized production
Profit.In addition routine IBC backplates are overlapping due to spatially having, and increase electrical leakage problems, and additionally introduced insulator
Component, in addition also increase process complexity.
Invention content
In view of the above problems, the present invention provides a kind of p-type back contacts solar cell and preparation method thereof, it can be preferable
It solves the above problems.
To achieve the above object, technical solution of the invention is：
A kind of p-type back contacts solar cell includes successively from top to bottom：Front passivation and antireflective coating, p-type silicon substrate,
Passivating back tunnel layer, N-shaped doping film layer, backside passivation film and battery electrode；The N-shaped doping film layer local area distribution is being carried on the back
Face is passivated on tunnel layer；
The N-shaped doping film layer and the p-type area of p-type silicon backside of substrate are staggered in finger-like cross modal, wherein N-shaped
It includes N-shaped pass-through zone and N-shaped vertical area to adulterate film layer, and the p-type area includes p-type pass-through zone and p-type vertical area；
N-shaped pass-through zone and p-type pass-through zone are mutually parallel；The N-shaped vertical area and N-shaped pass-through zone are mutually perpendicular to and connect；
The p-type vertical area and p-type pass-through zone are mutually perpendicular to and connect；On N-shaped pass-through zone direction, the N-shaped vertical area
Domain and p-type vertical area are staggered；
The battery electrode includes anode and cathode, and the anode includes just superfine grid line and positive connection electrode, institute
It includes the thin grid line of cathode and cathode connection electrode to state cathode；
The thin grid line of cathode is contacted with the formation of the N-shaped vertical area of N-shaped doped region；The p-type of just superfine grid line and p-type area
Vertical area forms contact；Cathode connection electrode is arranged in N-shaped pass-through zone；Positive connection electrode setting runs through area in p-type
In domain；Just superfine grid line is connect with positive connection electrode, and passes through positive connection electrode derived current, the thin grid line of cathode and cathode
Connection electrode connects, and passes through cathode connection electrode derived current.
Back of the body N-shaped doping film layer is made of one or more in polysilicon, non-crystalline silicon, microcrystal silicon, and doped with V races member
Element.
Passivating back tunnel layer is one kind in silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide and non-crystalline silicon.
The width of N-shaped vertical area is 0.08~3mm, and the width of the p-type vertical area is 0.05~1mm.
Front passivation and antireflective coating are using in silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide, non-crystalline silicon
One or more compositions；The backside passivation film is using silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide, non-crystalline silicon
In one or more compositions.
In just superfine grid line and the partial contact zones of p-type silicon substrate, it is group-III element to be provided with one layer of doping component
The thickness of hole doping layer, hole doping layer is 1~15um.
It is additionally provided with one layer of alusil alloy layer between hole doping layer and just superfine grid line, alusil alloy layer thickness is 1~
5um。
Just superfine grid line is the electrode containing aluminium, and the width of superfine grid line is 20um~200um.
The thin grid line of cathode is the electrode of argentiferous, and the width of the thin grid line of cathode is 10um~100um.
Positive connection electrode main conductive ingredient includes one or more in silver, copper, aluminium, nickel；The cathode connection electricity
Pole main conductive ingredient includes one or more in silver, copper, aluminium, nickel.
A kind of preparation method of p-type back contacts solar cell, includes the following steps,
1) p-type silicon substrate is cleaned and is gone to damage, then carry out surface-texturing processing；
2) passivating back tunnel layer is formed in p-type silicon backside of substrate, and forms the N-shaped doping film layer of local area distribution；
3) it carries out positive passivation in p-type silicon substrate front surface and is prepared by antireflective coating, it is blunt to carry out the back side in p-type silicon backside of substrate
Change film preparation；
4) electrode preparation is carried out；In the electrode preparation process, just superfine grid line and back side p-type silicon substrate form contact,
The thin grid line of cathode and back side N-shaped doping film layer form contact.
Contact of the electrode with doped layer is that electrode slurry burn-through backside passivation film is formed or electrode slurry is opening film in advance
Region forms and is in direct contact.
Further, the preparation method of the N-shaped doping film layer of the p-type silicon backside of substrate, can be used doping chemistry in situ
Vapor deposition method；The preparation method of the N-shaped doping film layer, also can be used first chemical vapor deposition intrinsic layer, and rear collaboration is outer
The hot propulsion method of portion's doped source, ion injection method, gas take source thermal diffusion method.
Further, the positive passivation and antireflective coating preparation method, including：Chemical vapour deposition technique, atomic layer
Sedimentation, thermally grown method, physical vaporous deposition.
Further, the passivating back membrane preparation method, including：Chemical vapour deposition technique, atomic layer deposition method, heat are raw
Regular way, physical vaporous deposition.
Compared with prior art, the beneficial effects of the invention are as follows：
Finger-like used at present intersects back contacts solar cell usually using N-shaped piece as base material, and overleaf
Usually using silver paste, therefore when preparing IBC batteries, need to carry out mixing for higher concentration to the region of emitter and back surface field
It is miscellaneous, it could preferably to form electrode contact during subsequent technology for preparing electrode, cost is higher.And due to needing
The doping process process of different doping types at least twice is carried out, technological process is longer, is especially mixed in progress p-type in silicon chip
When miscellaneous, higher temperature and time is needed, increases the period of technique.Present invention uses p-type pieces as cell substrate, and
The process that doped p type back surface field is eliminated in technological process avoids p to greatly reduce the complexity of technological process
The high temperature complex process that the doping of type back surface field needs.In addition, the back side uses alum gate line as anode in battery flow
The thin grid line of electrode greatly reduces cost compared to silver paste as anode electrode, can also be in the p of not extra implant
Preferably contact is formed in type substrate.In addition, the emitter of cell backside and the region of back surface field, in the horizontal and vertical of space
It is all not in contact on direction, has completely cut off emitter and back surface field completely, the significantly less generation of leakage current improves reliability
It is showed with battery performance.In addition the structure design that cell backside is mutually clamped using N-shaped vertical area and p-type vertical area, makes
Obtain positive and cathode does not have overlapping region in battery on p-type silicon substrate thickness direction, avoids and spatially causes leakage current
Possibility.Eliminate the insulator design between anode and cathode, it is possible to reduce the preparation process flow of insulator, and reduce
Space complexity.And reliable sex expression of the battery in later product can be improved, the technology difficulty of battery component is reduced.
Description of the drawings
Fig. 1 is the battery structure schematic diagram of a specific embodiment in embodiment.
Fig. 2 is the battery structure schematic diagram of another specific embodiment in embodiment.
Fig. 3 is the battery structure schematic diagram of the third specific embodiment in embodiment.
Fig. 4 is the back side dopant profiles schematic diagram of embodiment.
Fig. 5 is the electrode schematic diagram of embodiment.
Wherein 1 is p-type silicon substrate, and 2 adulterate film layer for front passivation and antireflective coating, 3 for N-shaped, and 4 be p-type area, and 5 are
Backside passivation film, 6 is open diaphragm area, and 7 be just superfine grid line, and 8 be the thin grid line of cathode, and 9 connect for positive connection electrode, 10 for cathode
Receiving electrode, 11 be passivating back tunnel layer, and 12 be hole doping layer, and 13 be alusil alloy layer；301 be N-shaped pass-through zone, 302
It is p-type pass-through zone for N-shaped vertical area, 401,402 be p-type vertical area.
Specific implementation mode
As shown in Figures 1 to 5, a kind of p-type back contacts solar cell includes successively from top to bottom：Front passivation and anti-reflection
Penetrate film 2, p-type silicon substrate 1, passivating back tunnel layer 11, N-shaped doping film layer 3, backside passivation film 5 and battery electrode；The n
Type doping 3 local area distribution of film layer is overleaf passivated on tunnel layer 11；Backside passivation film 5 is used for the N-shaped doping of local area distribution
Layer 3 is spaced apart.
As shown in figure 4, N-shaped doping film layer 3 and the p-type area 4 at 1 back side of p-type silicon substrate are in finger-like cross modal staggered row
Row, wherein N-shaped doping film layer 3 include N-shaped pass-through zone 301 and N-shaped vertical area 302, and the p-type area 4 runs through including p-type
Region 401 and p-type vertical area 402；N-shaped pass-through zone 301 and p-type pass-through zone 401 are mutually parallel；The N-shaped vertical area
Domain 302 and N-shaped pass-through zone 301 are mutually perpendicular to and connect；The p-type vertical area 402 and p-type pass-through zone 401 are mutually hung down
Direct join connects；On 301 direction of N-shaped pass-through zone, the N-shaped vertical area 302 and p-type vertical area 402 are staggered；
As shown in figure 5, the battery electrode includes anode and cathode, the anode includes just superfine grid line 7 and anode
Connection electrode 9, the cathode include the thin grid line 8 of cathode and cathode connection electrode 11；
The thin grid line 8 of cathode is contacted with the formation of the N-shaped vertical area 302 of N-shaped doped region；Just superfine grid line 7 and p-type area
4 p-type vertical area 402 forms contact；Cathode connection electrode 11 is arranged in N-shaped pass-through zone 301；Positive connection electrode 9
It is arranged in p-type pass-through zone 401；Just superfine grid line 7 connect with positive connection electrode 9, and passes through the export of positive connection electrode 9
Electric current, the thin grid line of cathode 8 is connect with cathode connection electrode 11, and passes through cathode connection electrode derived current.It carries on the back N-shaped and adulterates film layer
3 are made of one or more in polysilicon, non-crystalline silicon, microcrystal silicon, and doped with V group element.
As shown in figure 3, in just superfine grid line 7 and the partial contact zones of p-type silicon substrate 1, it is provided with one layer of doping component
Thickness for the hole doping layer 12 of group-III element, hole doping layer 12 is 1~15um.
As shown in figure 3, being additionally provided with one layer of alusil alloy layer 13, aluminium silicon between hole doping layer 12 and just superfine grid line 7
13 thickness of alloy-layer is 1~5um.
The preferred embodiment that the invention will now be described in detail with reference to the accompanying drawings.
Embodiment 1：
It illustrates below a kind of preparation method using above structure and the back contacts solar cell of method, is as shown in Figure 1
Structure.The preparation method of this back contacts solar cell is specific as follows：
1) it carries out damage to p-type silicon substrate 1 to handle, surface-texturing processing and cleaning process.Using p-type monocrystalline silicon as
Cell substrate carries out damage using 60 DEG C of solution containing KOH and handles, and the solution containing KOH is used under the conditions of 80 DEG C
Surface-texturing processing is carried out, forms pyramid matte, pyramid scale 2-5um, and use the mixed of also hydrofluoric acid and hydrochloric acid
It closes solution to be cleaned, deionized water cleaning and drying.
2) preparation of passivating back tunnel layer 11 and back side N-shaped doping film layer 3.Use low-pressure chemical vapor deposition
(LPCVD) deposition of tunnel oxide silicon is once carried out, polysilicon (poly silicon) deposition that N-shaped adulterates in situ.Wherein tunnel
Wear silicon oxide layer thickness 1nm, N-shaped doped polycrystalline silicon thickness 100nm, 2E20 atom/cubic centimetre of N-shaped doping concentration.The back side
Carry out the fluting of p-type area 4.Cell backside is handled using laser, tunnel oxide, the N-shaped of local removal thereon
Poly layers, passivating oxide layer and intrinsically polysilicon layer.So that doped region forms dopant profiles as shown in Figure 4.The N-shaped hangs down
The width in straight region 302 is 0.2mm, and the width of the p-type vertical area 402 is 0.08mm.Then, using tetramethyl hydroxide
After ammonium salt solution cross-notching region starts the cleaning processing, hydrochloric acid solution cleaning, deionized water cleaning, drying etc. are carried out.
3) front passivation and the preparation of antireflective coating 2, backside passivation film 5.It is passivated in cell backside, deposition of aluminium oxide
And silicon nitride layer.The deposition of aluminium oxide and silicon nitride passive film, oxygen are completed using plasma enhancement chemical vapor deposition PECVD
Change aluminium thickness 15nm, silicon nitride thickness 100nm, refractive index 2.10.Using enhanced plasma chemical vapor deposition PECVD in electricity
The alumina layer of pond light-receiving surface deposition 5-10nm, redeposited silicon nitride, thickness 80nm, refractive index 2.03 are completed just on it
Face is passivated and the preparation of antireflective coating 2.
4) prepared by battery electrode.The preparation in p-type contact region is carried out in cell backside p-type area 4, is used in p-type area 4
Laser carries out out film, and opening area is in spot distribution, opens a diameter of 90nm of film spot figure.Light of the passivating film at the back side in laser
The region of spot irradiation forms trepanning, and non-irradiated region does not form contact hole then, this is contacted, and bore region is enterprising to cross laser opening
Afterwards, without backside passivation film 5.
The electricity for including conductive compositions is formed above the regions cell backside n and back side p-type area 4 using screen printing mode
Pole pulp layer.
Metallization heat treatment process is completed in sintering furnace.500-800 DEG C of heat spike temperature.Preferably add in the present embodiment
It is 700 DEG C to be heat-treated peak temperature.By this step, completes battery and prepare.The battery electrode includes anode and cathode, institute
It includes just superfine grid line 77 and positive connection electrode 9 to state anode, and the cathode includes the thin grid line 8 of cathode and cathode connection electrode
11；The thin grid line of cathode 8 is locally contacted with the formation of the N-shaped vertical area 302 of N-shaped doped region；Just superfine grid line 7 locally with
The p-type vertical area 402 of p-type area 4 forms contact；Cathode connection electrode 11 is arranged in N-shaped pass-through zone 301；Anode is even
Receiving electrode 9 is arranged in p-type pass-through zone 401；Just superfine grid line 7 connect with positive connection electrode 9, and it is electric to pass through anode connection
9 derived current of pole, the thin grid line of cathode 8 is connect with cathode connection electrode 11, and passes through cathode connection electrode derived current；Its battery
Structure is as shown in Fig. 2, wherein electrode structure is as shown in Figure 5.
Embodiment 2
The preparation method of another back contacts solar cell of citing below, is structure as shown in Figure 2.This back contacts sun electricity
The preparation method in pond is specific as follows：
1) it carries out damage to p-type silicon substrate 1 to handle, surface-texturing processing and cleaning process.Using p-type monocrystalline silicon as
Cell substrate carries out damage using 60 DEG C of solution containing KOH and handles, and the solution containing KOH is used under the conditions of 80 DEG C
Surface-texturing processing is carried out, forms pyramid matte, pyramid scale 2-5um, and use the mixed of also hydrofluoric acid and hydrochloric acid
It closes solution to be cleaned, deionized water cleaning and drying.
2) preparation of passivating back tunnel layer 11 and N-shaped doping film layer 3.Use low-pressure chemical vapor deposition (LPCVD) one
The secondary deposition for carrying out tunnel oxide silicon, polysilicon (poly silicon) deposition that N-shaped adulterates in situ.Wherein tunnel oxide silicon layer
Thickness 2nm, N-shaped doped polycrystalline silicon thickness 100nm, 2E20 atom/cubic centimetre of N-shaped doping concentration.Graphical n-type heterojunction
It prepares.Poly layers of the N-shaped of cleaning local removal thereon is carried out using mask collaboration tetramethylammonium hydroxide, retains passivating back tunnel
Wear layer 11.Form p-type area 4.So that doped region forms dopant profiles as shown in Figure 4.Then, it is clear to carry out hydrochloric acid solution
It washes, deionized water cleaning, drying etc..
3) front passivation and the preparation of antireflective coating 2, backside passivation film 5.It is passivated in cell backside, deposition of aluminium oxide
And silicon nitride layer.The deposition of aluminium oxide and silicon nitride passive film, oxygen are completed using plasma enhancement chemical vapor deposition PECVD
Change aluminium thickness 15nm, silicon nitride thickness 100nm, refractive index 2.10.Using enhanced plasma chemical vapor deposition PECVD in electricity
The alumina layer of pond light-receiving surface deposition 5-10nm, redeposited silicon nitride, thickness 80nm, refractive index 2.03 are completed just on it
Face is passivated and the preparation of antireflective coating 2.
1) prepared by battery electrode.
2) laser is used to carry out trepanning in cell backside p-type area 4.Scan mode is to carry out pulsed office to p-type area 4
Portion's laser radiation treatment.The passivating film at the back side forms trepanning in the region that the hot spot of laser irradiates, and non-irradiated region does not have then
Contact hole is formed, on this contact bore region after laser opening, without backside passivation film 5.
The electricity for including conductive compositions is formed above the regions cell backside n and back side p-type area 4 using screen printing mode
Pole pulp layer.
4) heat-agglomerating processing is completed in sintering furnace.600-800 DEG C of heat spike temperature.It is preferably heated in the present embodiment
It is 700 DEG C to handle peak temperature.By this step, completes battery and prepare.The battery electrode includes positive and cathode, described
Anode includes just superfine grid line 77 and positive connection electrode 9, and the cathode includes the thin grid line 8 of cathode and cathode connection electrode 11；
The thin grid line of cathode 8 is locally contacted with the formation of the N-shaped vertical area 302 of N-shaped doped region；Just superfine grid line 7 locally with p-type
The p-type vertical area 402 in region 4 forms contact；Cathode connection electrode 11 is arranged in N-shaped pass-through zone 301；Anode connection electricity
Pole 9 is arranged in p-type pass-through zone 401；Just superfine grid line 7 is connect with positive connection electrode 9, and passes through positive connection electrode 9
Derived current, the thin grid line of cathode 8 is connect with cathode connection electrode 11, and passes through cathode connection electrode derived current；Its battery knot
Structure is as shown in Fig. 2, wherein electrode structure is as shown in Figure 5.
Embodiment 3：
It illustrates below a kind of preparation method using above structure and the back contacts solar cell of method, is as shown in Figure 1
Structure.The preparation method of this back contacts solar cell is specific as follows：
1) it carries out damage to p-type silicon substrate 1 to handle, surface-texturing processing and cleaning process.Using p-type monocrystalline silicon as
Cell substrate carries out damage using 60 DEG C of solution containing KOH and handles, and the solution containing KOH is used under the conditions of 80 DEG C
Surface-texturing processing is carried out, forms pyramid matte, pyramid scale 2-5um, and use the mixed of also hydrofluoric acid and hydrochloric acid
It closes solution to be cleaned, deionized water cleaning and drying.
2) preparation of passivating back tunnel layer 11 and back side N-shaped doping film layer 3.Use low-pressure chemical vapor deposition
(LPCVD) deposition of tunnel oxide silicon is once carried out, polysilicon (poly silicon) deposition that N-shaped adulterates in situ.Wherein tunnel
Wear silicon oxide layer thickness 1nm, N-shaped doped polycrystalline silicon thickness 100nm, 2E20 atom/cubic centimetre of N-shaped doping concentration.The back side
Carry out the fluting of p-type area 4.Cell backside is handled using laser, tunnel oxide, the N-shaped of local removal thereon
Poly layers, passivating oxide layer and intrinsically polysilicon layer.So that doped region forms dopant profiles as shown in Figure 4.The N-shaped hangs down
The width in straight region 302 is 0.2mm, and the width of the p-type vertical area 402 is 0.08mm.Then, using tetramethyl hydroxide
After ammonium salt solution cross-notching region starts the cleaning processing, hydrochloric acid solution cleaning, deionized water cleaning, drying etc. are carried out.
3) front passivation and the preparation of antireflective coating 2, backside passivation film 5.It is passivated in cell backside, deposition of aluminium oxide
And silicon nitride layer.The deposition of aluminium oxide and silicon nitride passive film, oxygen are completed using plasma enhancement chemical vapor deposition PECVD
Change aluminium thickness 15nm, silicon nitride thickness 100nm, refractive index 2.10.Using enhanced plasma chemical vapor deposition PECVD in electricity
The alumina layer of pond light-receiving surface deposition 5-10nm, redeposited silicon nitride, thickness 80nm, refractive index 2.03 are completed just on it
Face is passivated and the preparation of antireflective coating 2.
4) prepared by battery electrode.The preparation in p-type contact region is carried out in cell backside p-type area 4, is used in p-type area 4
Laser carries out out film, and opening area is in spot distribution, opens a diameter of 90nm of film spot figure.Light of the passivating film at the back side in laser
The region of spot irradiation forms trepanning, and non-irradiated region does not form contact hole then, this is contacted, and bore region is enterprising to cross laser opening
Afterwards, without backside passivation film 5.
The electricity for including conductive compositions is formed above the regions cell backside n and back side p-type area 4 using screen printing mode
Pole pulp layer.
Metallization heat treatment process is completed in sintering furnace.500-800 DEG C of heat spike temperature.Preferably add in the present embodiment
It is 700 DEG C to be heat-treated peak temperature.By this step, completes battery and prepare.The battery electrode includes anode and cathode, institute
It includes just superfine grid line 77 and positive connection electrode 9 to state anode, and the cathode includes the thin grid line 8 of cathode and cathode connection electrode
11；The thin grid line of cathode 8 is locally contacted with the formation of the N-shaped vertical area 302 of N-shaped doped region；Just superfine grid line 7 locally with
The p-type vertical area 402 of p-type area 4 forms contact；Cathode connection electrode 11 is arranged in N-shaped pass-through zone 301；Anode is even
Receiving electrode 9 is arranged in p-type pass-through zone 401；Just superfine grid line 7 connect with positive connection electrode 9, and it is electric to pass through anode connection
9 derived current of pole, the thin grid line of cathode 8 is connect with cathode connection electrode 11, and passes through cathode connection electrode derived current；Its battery
Structure as shown in figure 3, be formed with the cavitation layer 12 and alusil alloy layer 13 for mixing aluminium between just superfine grid line 7 and p-type silicon substrate 1,
Electrode structure is as shown in Figure 5.
In addition, the above embodiment of the present invention is example, has and think with the technology described in claims of the present invention
Want to be allowed to identical method and play the technical solution of identical function and effect, is all contained in the present invention.
Claims (12)
1. a kind of p-type back contacts solar cell, which is characterized in that include successively from top to bottom：Front passivation and antireflective coating
(2), p-type silicon substrate (1), passivating back tunnel layer (11), N-shaped doping film layer (3), backside passivation film (5) and battery electrode；Institute
N-shaped doping film layer (3) local area distribution stated overleaf is passivated on tunnel layer (11)；
The p-type area (4) at N-shaped doping film layer (3) and p-type silicon substrate (1) back side is staggered in finger-like cross modal,
Middle N-shaped doping film layer (3) includes N-shaped pass-through zone (301) and N-shaped vertical area (302), and the p-type area (4) includes p-type
Pass-through zone (401) and p-type vertical area (402)；N-shaped pass-through zone (301) and p-type pass-through zone (401) are mutually parallel；Institute
It states N-shaped vertical area (302) and N-shaped pass-through zone (301) is mutually perpendicular to and connects；The p-type vertical area (402) and p-type
Pass-through zone (401) is mutually perpendicular to and connects；On N-shaped pass-through zone (301) direction, the N-shaped vertical area (302) and p
Type vertical area (402) is staggered；
The battery electrode includes anode and cathode, and the anode includes just superfine grid line (7) and positive connection electrode (9),
The cathode includes the thin grid line of cathode (8) and cathode connection electrode (11)；
The thin grid line of cathode (8) is contacted with the formation of the N-shaped vertical area (302) of N-shaped doped region；Just superfine grid line (7) and p-type area
The p-type vertical area (402) in domain (4) forms contact；Cathode connection electrode (11) setting is in N-shaped pass-through zone (301)；Anode
Connection electrode (9) setting is in p-type pass-through zone (401)；Just superfine grid line (7) connect with positive connection electrode (9), and passes through
Positive connection electrode (9) derived current, the thin grid line of cathode (8) are connect with cathode connection electrode (11), and connect electricity by cathode
Pole derived current.
2. p-type back contacts solar cell according to claim 1, which is characterized in that back of the body N-shaped doping film layer (3) by
One or more compositions in polysilicon, non-crystalline silicon, microcrystal silicon, and doped with V group element.
3. p-type back contacts solar cell according to claim 1, which is characterized in that the passivating back tunnel layer (11)
For one kind in silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide and non-crystalline silicon.
4. p-type back contacts solar cell according to claim 1, which is characterized in that the N-shaped vertical area (302)
Width is 0.08~3mm, and the width of the p-type vertical area (402) is 0.05~1mm.
5. p-type back contacts solar cell according to claim 1, which is characterized in that the front passivation and antireflective coating
(2) one or more compositions in silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide, non-crystalline silicon are used；The back side
Passivating film (5) is using one or more compositions in silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide, non-crystalline silicon.
6. p-type back contacts solar cell according to claim 1, which is characterized in that the just superfine grid line (7) and p
In the partial contact zones of type silicon base (1), it is provided with the hole doping layer (12) that one layer of doping component is group-III element, it is empty
The thickness of cave doped layer (12) is 1~15um.
7. p-type back contacts solar cell according to claim 6, which is characterized in that the hole doping layer (12) and
One layer of alusil alloy layer (13) is additionally provided between just superfine grid line (7), alusil alloy layer (13) thickness is 1~5um.
8. p-type back contacts solar cell according to claim 1, which is characterized in that the just superfine grid line (7) is containing aluminium
Electrode, the width of superfine grid line (7) is 20um~200um.
9. p-type back contacts solar cell according to claim 1, which is characterized in that the thin grid line of cathode (8) is argentiferous
Electrode, the width of the thin grid line of cathode (8) is 10um~100um.
10. p-type back contacts solar cell according to claim 1, which is characterized in that the anode connection electrode (9) is main
It includes one or more in silver, copper, aluminium, nickel to want conductive compositions；Cathode connection electrode (11) the main conductive ingredient includes
It is one or more in silver, copper, aluminium, nickel.
11. a kind of preparation method of p-type back contacts solar cell, which is characterized in that include the following steps,
1) p-type silicon substrate (1) is cleaned and is gone to damage, then carry out surface-texturing processing；
2) passivating back tunnel layer (11) is formed at p-type silicon substrate (1) back side, and forms the N-shaped doping film layer of local area distribution
(3)；
3) it carries out positive passivation in p-type silicon substrate (1) front and is prepared by antireflective coating (2), carried out at p-type silicon substrate (1) back side
It is prepared by backside passivation film (5)；
4) electrode preparation is carried out；In the electrode preparation process, just superfine grid line (7) and back side p-type silicon substrate (1) formation connect
It touches, the thin grid line of cathode (8) and back side N-shaped doping film layer (3) form contact.
12. p-type back contacts solar cell according to claim 11, which is characterized in that contact of the electrode with doped layer be
Electrode slurry burns that backside passivation film (5) is formed or electrode slurry is opened diaphragm area formation and be in direct contact pre-.
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| CN109461782A (en) * | 2018-12-25 | 2019-03-12 | 浙江晶科能源有限公司 | P-type back contacted solar cell and preparation method thereof |
| CN111584685A (en) * | 2020-05-28 | 2020-08-25 | 江西展宇新能科技有限公司 | Novel solar cell and preparation method thereof |
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