CN108666379A - A kind of p-type back contacts solar cell and preparation method thereof - Google Patents

A kind of p-type back contacts solar cell and preparation method thereof Download PDF

Info

Publication number
CN108666379A
CN108666379A CN201810760069.2A CN201810760069A CN108666379A CN 108666379 A CN108666379 A CN 108666379A CN 201810760069 A CN201810760069 A CN 201810760069A CN 108666379 A CN108666379 A CN 108666379A
Authority
CN
China
Prior art keywords
type
shaped
layer
zone
grid line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810760069.2A
Other languages
Chinese (zh)
Inventor
李华
鲁伟明
李中兰
靳玉鹏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taizhou Longi Solar Technology Co Ltd
Original Assignee
Taizhou Longi Solar Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taizhou Longi Solar Technology Co Ltd filed Critical Taizhou Longi Solar Technology Co Ltd
Priority to CN201810760069.2A priority Critical patent/CN108666379A/en
Publication of CN108666379A publication Critical patent/CN108666379A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/022458Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Sustainable Energy (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The present invention relates to a kind of p-type back contacts solar cells and preparation method thereof, including:Front passivation and antireflective coating, p-type silicon substrate, passivating back tunnel layer, N-shaped doping film layer, backside passivation film and battery electrode;The N-shaped doping film layer local area distribution is overleaf passivated on tunnel layer;The N-shaped doping film layer and the p-type area of p-type silicon backside of substrate are staggered in finger-like cross modal, and wherein N-shaped doping film layer includes N-shaped pass-through zone and N-shaped vertical area, and the p-type area includes p-type pass-through zone and p-type vertical area;N-shaped pass-through zone and p-type pass-through zone are mutually parallel;The N-shaped vertical area and N-shaped pass-through zone are mutually perpendicular to and connect;The p-type vertical area and p-type pass-through zone are mutually perpendicular to and connect;On N-shaped pass-through zone direction, the N-shaped vertical area and p-type vertical area are staggered;The present invention can improve reliable sex expression of the battery in later product, reduce the technology difficulty of battery component.

Description

A kind of p-type back contacts solar cell and preparation method thereof
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of p-type back contacts solar cell and its preparation side Method.
Background technology
Currently, gradually exhausting with fossil energy, for solar cell as new energy substitution scheme, use is more and more wider It is general.Solar cell is the device that the luminous energy of the sun is converted to electric energy.Solar cell generates carrier using photogenic voltage principle, Then carrier is drawn using electrode, to be conducive to efficiently use electric energy.
Back contact battery, i.e. back contact batteries, wherein finger-like intersect back contacts solar cell and are also known as IBC electricity Pond.IBC full name are that Interdigitated back contact finger-like intersects back contacts.The feature of IBC battery maximums is transmitting Pole and metal contact are all in the back side of battery, the influence that the no metal electrode in front blocks, therefore with higher short circuit electricity Jsc is flowed, while the back side can allow wider metal grid lines to reduce series resistance Rs to improve fill factor FF;And this The unobstructed battery in front not only high conversion efficiency is planted, but also seems more attractive, meanwhile, the component of all back-contact electrodes is easier to fill Match.IBC batteries are current one of the technique directions for realizing high-efficiency crystal silicon cell.
Finger-like used at present intersects back contacts solar cell usually using N-shaped piece as base material, and overleaf Usually using silver paste, therefore when preparing IBC batteries, need to carry out mixing for higher concentration to the region of emitter and back surface field It is miscellaneous, it could preferably to form electrode contact during subsequent technology for preparing electrode, cost is higher.And due to needing The doping process process of different doping types at least twice is carried out, technological process is longer, is especially mixed in progress p-type in silicon chip When miscellaneous, higher temperature and time is needed, the minority carrier life time of p-type silicon substrate (1) is caused to bring larger negative effect, and Extra band carrys out edge pn-junction and is difficult to remove, and increases the complexity of technique, extends technological process, more not to industrialized production Profit.In addition routine IBC backplates are overlapping due to spatially having, and increase electrical leakage problems, and additionally introduced insulator Component, in addition also increase process complexity.
Invention content
In view of the above problems, the present invention provides a kind of p-type back contacts solar cell and preparation method thereof, it can be preferable It solves the above problems.
To achieve the above object, technical solution of the invention is:
A kind of p-type back contacts solar cell includes successively from top to bottom:Front passivation and antireflective coating, p-type silicon substrate, Passivating back tunnel layer, N-shaped doping film layer, backside passivation film and battery electrode;The N-shaped doping film layer local area distribution is being carried on the back Face is passivated on tunnel layer;
The N-shaped doping film layer and the p-type area of p-type silicon backside of substrate are staggered in finger-like cross modal, wherein N-shaped It includes N-shaped pass-through zone and N-shaped vertical area to adulterate film layer, and the p-type area includes p-type pass-through zone and p-type vertical area; N-shaped pass-through zone and p-type pass-through zone are mutually parallel;The N-shaped vertical area and N-shaped pass-through zone are mutually perpendicular to and connect; The p-type vertical area and p-type pass-through zone are mutually perpendicular to and connect;On N-shaped pass-through zone direction, the N-shaped vertical area Domain and p-type vertical area are staggered;
The battery electrode includes anode and cathode, and the anode includes just superfine grid line and positive connection electrode, institute It includes the thin grid line of cathode and cathode connection electrode to state cathode;
The thin grid line of cathode is contacted with the formation of the N-shaped vertical area of N-shaped doped region;The p-type of just superfine grid line and p-type area Vertical area forms contact;Cathode connection electrode is arranged in N-shaped pass-through zone;Positive connection electrode setting runs through area in p-type In domain;Just superfine grid line is connect with positive connection electrode, and passes through positive connection electrode derived current, the thin grid line of cathode and cathode Connection electrode connects, and passes through cathode connection electrode derived current.
Back of the body N-shaped doping film layer is made of one or more in polysilicon, non-crystalline silicon, microcrystal silicon, and doped with V races member Element.
Passivating back tunnel layer is one kind in silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide and non-crystalline silicon.
The width of N-shaped vertical area is 0.08~3mm, and the width of the p-type vertical area is 0.05~1mm.
Front passivation and antireflective coating are using in silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide, non-crystalline silicon One or more compositions;The backside passivation film is using silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide, non-crystalline silicon In one or more compositions.
In just superfine grid line and the partial contact zones of p-type silicon substrate, it is group-III element to be provided with one layer of doping component The thickness of hole doping layer, hole doping layer is 1~15um.
It is additionally provided with one layer of alusil alloy layer between hole doping layer and just superfine grid line, alusil alloy layer thickness is 1~ 5um。
Just superfine grid line is the electrode containing aluminium, and the width of superfine grid line is 20um~200um.
The thin grid line of cathode is the electrode of argentiferous, and the width of the thin grid line of cathode is 10um~100um.
Positive connection electrode main conductive ingredient includes one or more in silver, copper, aluminium, nickel;The cathode connection electricity Pole main conductive ingredient includes one or more in silver, copper, aluminium, nickel.
A kind of preparation method of p-type back contacts solar cell, includes the following steps,
1) p-type silicon substrate is cleaned and is gone to damage, then carry out surface-texturing processing;
2) passivating back tunnel layer is formed in p-type silicon backside of substrate, and forms the N-shaped doping film layer of local area distribution;
3) it carries out positive passivation in p-type silicon substrate front surface and is prepared by antireflective coating, it is blunt to carry out the back side in p-type silicon backside of substrate Change film preparation;
4) electrode preparation is carried out;In the electrode preparation process, just superfine grid line and back side p-type silicon substrate form contact, The thin grid line of cathode and back side N-shaped doping film layer form contact.
Contact of the electrode with doped layer is that electrode slurry burn-through backside passivation film is formed or electrode slurry is opening film in advance Region forms and is in direct contact.
Further, the preparation method of the N-shaped doping film layer of the p-type silicon backside of substrate, can be used doping chemistry in situ Vapor deposition method;The preparation method of the N-shaped doping film layer, also can be used first chemical vapor deposition intrinsic layer, and rear collaboration is outer The hot propulsion method of portion's doped source, ion injection method, gas take source thermal diffusion method.
Further, the positive passivation and antireflective coating preparation method, including:Chemical vapour deposition technique, atomic layer Sedimentation, thermally grown method, physical vaporous deposition.
Further, the passivating back membrane preparation method, including:Chemical vapour deposition technique, atomic layer deposition method, heat are raw Regular way, physical vaporous deposition.
Compared with prior art, the beneficial effects of the invention are as follows:
Finger-like used at present intersects back contacts solar cell usually using N-shaped piece as base material, and overleaf Usually using silver paste, therefore when preparing IBC batteries, need to carry out mixing for higher concentration to the region of emitter and back surface field It is miscellaneous, it could preferably to form electrode contact during subsequent technology for preparing electrode, cost is higher.And due to needing The doping process process of different doping types at least twice is carried out, technological process is longer, is especially mixed in progress p-type in silicon chip When miscellaneous, higher temperature and time is needed, increases the period of technique.Present invention uses p-type pieces as cell substrate, and The process that doped p type back surface field is eliminated in technological process avoids p to greatly reduce the complexity of technological process The high temperature complex process that the doping of type back surface field needs.In addition, the back side uses alum gate line as anode in battery flow The thin grid line of electrode greatly reduces cost compared to silver paste as anode electrode, can also be in the p of not extra implant Preferably contact is formed in type substrate.In addition, the emitter of cell backside and the region of back surface field, in the horizontal and vertical of space It is all not in contact on direction, has completely cut off emitter and back surface field completely, the significantly less generation of leakage current improves reliability It is showed with battery performance.In addition the structure design that cell backside is mutually clamped using N-shaped vertical area and p-type vertical area, makes Obtain positive and cathode does not have overlapping region in battery on p-type silicon substrate thickness direction, avoids and spatially causes leakage current Possibility.Eliminate the insulator design between anode and cathode, it is possible to reduce the preparation process flow of insulator, and reduce Space complexity.And reliable sex expression of the battery in later product can be improved, the technology difficulty of battery component is reduced.
Description of the drawings
Fig. 1 is the battery structure schematic diagram of a specific embodiment in embodiment.
Fig. 2 is the battery structure schematic diagram of another specific embodiment in embodiment.
Fig. 3 is the battery structure schematic diagram of the third specific embodiment in embodiment.
Fig. 4 is the back side dopant profiles schematic diagram of embodiment.
Fig. 5 is the electrode schematic diagram of embodiment.
Wherein 1 is p-type silicon substrate, and 2 adulterate film layer for front passivation and antireflective coating, 3 for N-shaped, and 4 be p-type area, and 5 are Backside passivation film, 6 is open diaphragm area, and 7 be just superfine grid line, and 8 be the thin grid line of cathode, and 9 connect for positive connection electrode, 10 for cathode Receiving electrode, 11 be passivating back tunnel layer, and 12 be hole doping layer, and 13 be alusil alloy layer;301 be N-shaped pass-through zone, 302 It is p-type pass-through zone for N-shaped vertical area, 401,402 be p-type vertical area.
Specific implementation mode
As shown in Figures 1 to 5, a kind of p-type back contacts solar cell includes successively from top to bottom:Front passivation and anti-reflection Penetrate film 2, p-type silicon substrate 1, passivating back tunnel layer 11, N-shaped doping film layer 3, backside passivation film 5 and battery electrode;The n Type doping 3 local area distribution of film layer is overleaf passivated on tunnel layer 11;Backside passivation film 5 is used for the N-shaped doping of local area distribution Layer 3 is spaced apart.
As shown in figure 4, N-shaped doping film layer 3 and the p-type area 4 at 1 back side of p-type silicon substrate are in finger-like cross modal staggered row Row, wherein N-shaped doping film layer 3 include N-shaped pass-through zone 301 and N-shaped vertical area 302, and the p-type area 4 runs through including p-type Region 401 and p-type vertical area 402;N-shaped pass-through zone 301 and p-type pass-through zone 401 are mutually parallel;The N-shaped vertical area Domain 302 and N-shaped pass-through zone 301 are mutually perpendicular to and connect;The p-type vertical area 402 and p-type pass-through zone 401 are mutually hung down Direct join connects;On 301 direction of N-shaped pass-through zone, the N-shaped vertical area 302 and p-type vertical area 402 are staggered;
As shown in figure 5, the battery electrode includes anode and cathode, the anode includes just superfine grid line 7 and anode Connection electrode 9, the cathode include the thin grid line 8 of cathode and cathode connection electrode 11;
The thin grid line 8 of cathode is contacted with the formation of the N-shaped vertical area 302 of N-shaped doped region;Just superfine grid line 7 and p-type area 4 p-type vertical area 402 forms contact;Cathode connection electrode 11 is arranged in N-shaped pass-through zone 301;Positive connection electrode 9 It is arranged in p-type pass-through zone 401;Just superfine grid line 7 connect with positive connection electrode 9, and passes through the export of positive connection electrode 9 Electric current, the thin grid line of cathode 8 is connect with cathode connection electrode 11, and passes through cathode connection electrode derived current.It carries on the back N-shaped and adulterates film layer 3 are made of one or more in polysilicon, non-crystalline silicon, microcrystal silicon, and doped with V group element.
As shown in figure 3, in just superfine grid line 7 and the partial contact zones of p-type silicon substrate 1, it is provided with one layer of doping component Thickness for the hole doping layer 12 of group-III element, hole doping layer 12 is 1~15um.
As shown in figure 3, being additionally provided with one layer of alusil alloy layer 13, aluminium silicon between hole doping layer 12 and just superfine grid line 7 13 thickness of alloy-layer is 1~5um.
The preferred embodiment that the invention will now be described in detail with reference to the accompanying drawings.
Embodiment 1:
It illustrates below a kind of preparation method using above structure and the back contacts solar cell of method, is as shown in Figure 1 Structure.The preparation method of this back contacts solar cell is specific as follows:
1) it carries out damage to p-type silicon substrate 1 to handle, surface-texturing processing and cleaning process.Using p-type monocrystalline silicon as Cell substrate carries out damage using 60 DEG C of solution containing KOH and handles, and the solution containing KOH is used under the conditions of 80 DEG C Surface-texturing processing is carried out, forms pyramid matte, pyramid scale 2-5um, and use the mixed of also hydrofluoric acid and hydrochloric acid It closes solution to be cleaned, deionized water cleaning and drying.
2) preparation of passivating back tunnel layer 11 and back side N-shaped doping film layer 3.Use low-pressure chemical vapor deposition (LPCVD) deposition of tunnel oxide silicon is once carried out, polysilicon (poly silicon) deposition that N-shaped adulterates in situ.Wherein tunnel Wear silicon oxide layer thickness 1nm, N-shaped doped polycrystalline silicon thickness 100nm, 2E20 atom/cubic centimetre of N-shaped doping concentration.The back side Carry out the fluting of p-type area 4.Cell backside is handled using laser, tunnel oxide, the N-shaped of local removal thereon Poly layers, passivating oxide layer and intrinsically polysilicon layer.So that doped region forms dopant profiles as shown in Figure 4.The N-shaped hangs down The width in straight region 302 is 0.2mm, and the width of the p-type vertical area 402 is 0.08mm.Then, using tetramethyl hydroxide After ammonium salt solution cross-notching region starts the cleaning processing, hydrochloric acid solution cleaning, deionized water cleaning, drying etc. are carried out.
3) front passivation and the preparation of antireflective coating 2, backside passivation film 5.It is passivated in cell backside, deposition of aluminium oxide And silicon nitride layer.The deposition of aluminium oxide and silicon nitride passive film, oxygen are completed using plasma enhancement chemical vapor deposition PECVD Change aluminium thickness 15nm, silicon nitride thickness 100nm, refractive index 2.10.Using enhanced plasma chemical vapor deposition PECVD in electricity The alumina layer of pond light-receiving surface deposition 5-10nm, redeposited silicon nitride, thickness 80nm, refractive index 2.03 are completed just on it Face is passivated and the preparation of antireflective coating 2.
4) prepared by battery electrode.The preparation in p-type contact region is carried out in cell backside p-type area 4, is used in p-type area 4 Laser carries out out film, and opening area is in spot distribution, opens a diameter of 90nm of film spot figure.Light of the passivating film at the back side in laser The region of spot irradiation forms trepanning, and non-irradiated region does not form contact hole then, this is contacted, and bore region is enterprising to cross laser opening Afterwards, without backside passivation film 5.
The electricity for including conductive compositions is formed above the regions cell backside n and back side p-type area 4 using screen printing mode Pole pulp layer.
Metallization heat treatment process is completed in sintering furnace.500-800 DEG C of heat spike temperature.Preferably add in the present embodiment It is 700 DEG C to be heat-treated peak temperature.By this step, completes battery and prepare.The battery electrode includes anode and cathode, institute It includes just superfine grid line 77 and positive connection electrode 9 to state anode, and the cathode includes the thin grid line 8 of cathode and cathode connection electrode 11;The thin grid line of cathode 8 is locally contacted with the formation of the N-shaped vertical area 302 of N-shaped doped region;Just superfine grid line 7 locally with The p-type vertical area 402 of p-type area 4 forms contact;Cathode connection electrode 11 is arranged in N-shaped pass-through zone 301;Anode is even Receiving electrode 9 is arranged in p-type pass-through zone 401;Just superfine grid line 7 connect with positive connection electrode 9, and it is electric to pass through anode connection 9 derived current of pole, the thin grid line of cathode 8 is connect with cathode connection electrode 11, and passes through cathode connection electrode derived current;Its battery Structure is as shown in Fig. 2, wherein electrode structure is as shown in Figure 5.
Embodiment 2
The preparation method of another back contacts solar cell of citing below, is structure as shown in Figure 2.This back contacts sun electricity The preparation method in pond is specific as follows:
1) it carries out damage to p-type silicon substrate 1 to handle, surface-texturing processing and cleaning process.Using p-type monocrystalline silicon as Cell substrate carries out damage using 60 DEG C of solution containing KOH and handles, and the solution containing KOH is used under the conditions of 80 DEG C Surface-texturing processing is carried out, forms pyramid matte, pyramid scale 2-5um, and use the mixed of also hydrofluoric acid and hydrochloric acid It closes solution to be cleaned, deionized water cleaning and drying.
2) preparation of passivating back tunnel layer 11 and N-shaped doping film layer 3.Use low-pressure chemical vapor deposition (LPCVD) one The secondary deposition for carrying out tunnel oxide silicon, polysilicon (poly silicon) deposition that N-shaped adulterates in situ.Wherein tunnel oxide silicon layer Thickness 2nm, N-shaped doped polycrystalline silicon thickness 100nm, 2E20 atom/cubic centimetre of N-shaped doping concentration.Graphical n-type heterojunction It prepares.Poly layers of the N-shaped of cleaning local removal thereon is carried out using mask collaboration tetramethylammonium hydroxide, retains passivating back tunnel Wear layer 11.Form p-type area 4.So that doped region forms dopant profiles as shown in Figure 4.Then, it is clear to carry out hydrochloric acid solution It washes, deionized water cleaning, drying etc..
3) front passivation and the preparation of antireflective coating 2, backside passivation film 5.It is passivated in cell backside, deposition of aluminium oxide And silicon nitride layer.The deposition of aluminium oxide and silicon nitride passive film, oxygen are completed using plasma enhancement chemical vapor deposition PECVD Change aluminium thickness 15nm, silicon nitride thickness 100nm, refractive index 2.10.Using enhanced plasma chemical vapor deposition PECVD in electricity The alumina layer of pond light-receiving surface deposition 5-10nm, redeposited silicon nitride, thickness 80nm, refractive index 2.03 are completed just on it Face is passivated and the preparation of antireflective coating 2.
1) prepared by battery electrode.
2) laser is used to carry out trepanning in cell backside p-type area 4.Scan mode is to carry out pulsed office to p-type area 4 Portion's laser radiation treatment.The passivating film at the back side forms trepanning in the region that the hot spot of laser irradiates, and non-irradiated region does not have then Contact hole is formed, on this contact bore region after laser opening, without backside passivation film 5.
The electricity for including conductive compositions is formed above the regions cell backside n and back side p-type area 4 using screen printing mode Pole pulp layer.
4) heat-agglomerating processing is completed in sintering furnace.600-800 DEG C of heat spike temperature.It is preferably heated in the present embodiment It is 700 DEG C to handle peak temperature.By this step, completes battery and prepare.The battery electrode includes positive and cathode, described Anode includes just superfine grid line 77 and positive connection electrode 9, and the cathode includes the thin grid line 8 of cathode and cathode connection electrode 11; The thin grid line of cathode 8 is locally contacted with the formation of the N-shaped vertical area 302 of N-shaped doped region;Just superfine grid line 7 locally with p-type The p-type vertical area 402 in region 4 forms contact;Cathode connection electrode 11 is arranged in N-shaped pass-through zone 301;Anode connection electricity Pole 9 is arranged in p-type pass-through zone 401;Just superfine grid line 7 is connect with positive connection electrode 9, and passes through positive connection electrode 9 Derived current, the thin grid line of cathode 8 is connect with cathode connection electrode 11, and passes through cathode connection electrode derived current;Its battery knot Structure is as shown in Fig. 2, wherein electrode structure is as shown in Figure 5.
Embodiment 3:
It illustrates below a kind of preparation method using above structure and the back contacts solar cell of method, is as shown in Figure 1 Structure.The preparation method of this back contacts solar cell is specific as follows:
1) it carries out damage to p-type silicon substrate 1 to handle, surface-texturing processing and cleaning process.Using p-type monocrystalline silicon as Cell substrate carries out damage using 60 DEG C of solution containing KOH and handles, and the solution containing KOH is used under the conditions of 80 DEG C Surface-texturing processing is carried out, forms pyramid matte, pyramid scale 2-5um, and use the mixed of also hydrofluoric acid and hydrochloric acid It closes solution to be cleaned, deionized water cleaning and drying.
2) preparation of passivating back tunnel layer 11 and back side N-shaped doping film layer 3.Use low-pressure chemical vapor deposition (LPCVD) deposition of tunnel oxide silicon is once carried out, polysilicon (poly silicon) deposition that N-shaped adulterates in situ.Wherein tunnel Wear silicon oxide layer thickness 1nm, N-shaped doped polycrystalline silicon thickness 100nm, 2E20 atom/cubic centimetre of N-shaped doping concentration.The back side Carry out the fluting of p-type area 4.Cell backside is handled using laser, tunnel oxide, the N-shaped of local removal thereon Poly layers, passivating oxide layer and intrinsically polysilicon layer.So that doped region forms dopant profiles as shown in Figure 4.The N-shaped hangs down The width in straight region 302 is 0.2mm, and the width of the p-type vertical area 402 is 0.08mm.Then, using tetramethyl hydroxide After ammonium salt solution cross-notching region starts the cleaning processing, hydrochloric acid solution cleaning, deionized water cleaning, drying etc. are carried out.
3) front passivation and the preparation of antireflective coating 2, backside passivation film 5.It is passivated in cell backside, deposition of aluminium oxide And silicon nitride layer.The deposition of aluminium oxide and silicon nitride passive film, oxygen are completed using plasma enhancement chemical vapor deposition PECVD Change aluminium thickness 15nm, silicon nitride thickness 100nm, refractive index 2.10.Using enhanced plasma chemical vapor deposition PECVD in electricity The alumina layer of pond light-receiving surface deposition 5-10nm, redeposited silicon nitride, thickness 80nm, refractive index 2.03 are completed just on it Face is passivated and the preparation of antireflective coating 2.
4) prepared by battery electrode.The preparation in p-type contact region is carried out in cell backside p-type area 4, is used in p-type area 4 Laser carries out out film, and opening area is in spot distribution, opens a diameter of 90nm of film spot figure.Light of the passivating film at the back side in laser The region of spot irradiation forms trepanning, and non-irradiated region does not form contact hole then, this is contacted, and bore region is enterprising to cross laser opening Afterwards, without backside passivation film 5.
The electricity for including conductive compositions is formed above the regions cell backside n and back side p-type area 4 using screen printing mode Pole pulp layer.
Metallization heat treatment process is completed in sintering furnace.500-800 DEG C of heat spike temperature.Preferably add in the present embodiment It is 700 DEG C to be heat-treated peak temperature.By this step, completes battery and prepare.The battery electrode includes anode and cathode, institute It includes just superfine grid line 77 and positive connection electrode 9 to state anode, and the cathode includes the thin grid line 8 of cathode and cathode connection electrode 11;The thin grid line of cathode 8 is locally contacted with the formation of the N-shaped vertical area 302 of N-shaped doped region;Just superfine grid line 7 locally with The p-type vertical area 402 of p-type area 4 forms contact;Cathode connection electrode 11 is arranged in N-shaped pass-through zone 301;Anode is even Receiving electrode 9 is arranged in p-type pass-through zone 401;Just superfine grid line 7 connect with positive connection electrode 9, and it is electric to pass through anode connection 9 derived current of pole, the thin grid line of cathode 8 is connect with cathode connection electrode 11, and passes through cathode connection electrode derived current;Its battery Structure as shown in figure 3, be formed with the cavitation layer 12 and alusil alloy layer 13 for mixing aluminium between just superfine grid line 7 and p-type silicon substrate 1, Electrode structure is as shown in Figure 5.
In addition, the above embodiment of the present invention is example, has and think with the technology described in claims of the present invention Want to be allowed to identical method and play the technical solution of identical function and effect, is all contained in the present invention.

Claims (12)

1. a kind of p-type back contacts solar cell, which is characterized in that include successively from top to bottom:Front passivation and antireflective coating (2), p-type silicon substrate (1), passivating back tunnel layer (11), N-shaped doping film layer (3), backside passivation film (5) and battery electrode;Institute N-shaped doping film layer (3) local area distribution stated overleaf is passivated on tunnel layer (11);
The p-type area (4) at N-shaped doping film layer (3) and p-type silicon substrate (1) back side is staggered in finger-like cross modal, Middle N-shaped doping film layer (3) includes N-shaped pass-through zone (301) and N-shaped vertical area (302), and the p-type area (4) includes p-type Pass-through zone (401) and p-type vertical area (402);N-shaped pass-through zone (301) and p-type pass-through zone (401) are mutually parallel;Institute It states N-shaped vertical area (302) and N-shaped pass-through zone (301) is mutually perpendicular to and connects;The p-type vertical area (402) and p-type Pass-through zone (401) is mutually perpendicular to and connects;On N-shaped pass-through zone (301) direction, the N-shaped vertical area (302) and p Type vertical area (402) is staggered;
The battery electrode includes anode and cathode, and the anode includes just superfine grid line (7) and positive connection electrode (9), The cathode includes the thin grid line of cathode (8) and cathode connection electrode (11);
The thin grid line of cathode (8) is contacted with the formation of the N-shaped vertical area (302) of N-shaped doped region;Just superfine grid line (7) and p-type area The p-type vertical area (402) in domain (4) forms contact;Cathode connection electrode (11) setting is in N-shaped pass-through zone (301);Anode Connection electrode (9) setting is in p-type pass-through zone (401);Just superfine grid line (7) connect with positive connection electrode (9), and passes through Positive connection electrode (9) derived current, the thin grid line of cathode (8) are connect with cathode connection electrode (11), and connect electricity by cathode Pole derived current.
2. p-type back contacts solar cell according to claim 1, which is characterized in that back of the body N-shaped doping film layer (3) by One or more compositions in polysilicon, non-crystalline silicon, microcrystal silicon, and doped with V group element.
3. p-type back contacts solar cell according to claim 1, which is characterized in that the passivating back tunnel layer (11) For one kind in silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide and non-crystalline silicon.
4. p-type back contacts solar cell according to claim 1, which is characterized in that the N-shaped vertical area (302) Width is 0.08~3mm, and the width of the p-type vertical area (402) is 0.05~1mm.
5. p-type back contacts solar cell according to claim 1, which is characterized in that the front passivation and antireflective coating (2) one or more compositions in silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide, non-crystalline silicon are used;The back side Passivating film (5) is using one or more compositions in silicon nitride, silica, silicon oxynitride, aluminium oxide, silicon carbide, non-crystalline silicon.
6. p-type back contacts solar cell according to claim 1, which is characterized in that the just superfine grid line (7) and p In the partial contact zones of type silicon base (1), it is provided with the hole doping layer (12) that one layer of doping component is group-III element, it is empty The thickness of cave doped layer (12) is 1~15um.
7. p-type back contacts solar cell according to claim 6, which is characterized in that the hole doping layer (12) and One layer of alusil alloy layer (13) is additionally provided between just superfine grid line (7), alusil alloy layer (13) thickness is 1~5um.
8. p-type back contacts solar cell according to claim 1, which is characterized in that the just superfine grid line (7) is containing aluminium Electrode, the width of superfine grid line (7) is 20um~200um.
9. p-type back contacts solar cell according to claim 1, which is characterized in that the thin grid line of cathode (8) is argentiferous Electrode, the width of the thin grid line of cathode (8) is 10um~100um.
10. p-type back contacts solar cell according to claim 1, which is characterized in that the anode connection electrode (9) is main It includes one or more in silver, copper, aluminium, nickel to want conductive compositions;Cathode connection electrode (11) the main conductive ingredient includes It is one or more in silver, copper, aluminium, nickel.
11. a kind of preparation method of p-type back contacts solar cell, which is characterized in that include the following steps,
1) p-type silicon substrate (1) is cleaned and is gone to damage, then carry out surface-texturing processing;
2) passivating back tunnel layer (11) is formed at p-type silicon substrate (1) back side, and forms the N-shaped doping film layer of local area distribution (3);
3) it carries out positive passivation in p-type silicon substrate (1) front and is prepared by antireflective coating (2), carried out at p-type silicon substrate (1) back side It is prepared by backside passivation film (5);
4) electrode preparation is carried out;In the electrode preparation process, just superfine grid line (7) and back side p-type silicon substrate (1) formation connect It touches, the thin grid line of cathode (8) and back side N-shaped doping film layer (3) form contact.
12. p-type back contacts solar cell according to claim 11, which is characterized in that contact of the electrode with doped layer be Electrode slurry burns that backside passivation film (5) is formed or electrode slurry is opened diaphragm area formation and be in direct contact pre-.
CN201810760069.2A 2018-07-11 2018-07-11 A kind of p-type back contacts solar cell and preparation method thereof Pending CN108666379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810760069.2A CN108666379A (en) 2018-07-11 2018-07-11 A kind of p-type back contacts solar cell and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810760069.2A CN108666379A (en) 2018-07-11 2018-07-11 A kind of p-type back contacts solar cell and preparation method thereof

Publications (1)

Publication Number Publication Date
CN108666379A true CN108666379A (en) 2018-10-16

Family

ID=63773979

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810760069.2A Pending CN108666379A (en) 2018-07-11 2018-07-11 A kind of p-type back contacts solar cell and preparation method thereof

Country Status (1)

Country Link
CN (1) CN108666379A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109244194A (en) * 2018-11-06 2019-01-18 东方日升(常州)新能源有限公司 A kind of preparation method of low cost p-type all back-contact electrodes crystal silicon solar battery
CN109461782A (en) * 2018-12-25 2019-03-12 浙江晶科能源有限公司 P-type back contacted solar cell and preparation method thereof
CN111584685A (en) * 2020-05-28 2020-08-25 江西展宇新能科技有限公司 Novel solar cell and preparation method thereof
CN112510105A (en) * 2020-11-10 2021-03-16 浙江爱旭太阳能科技有限公司 High-efficiency solar cell and preparation method thereof

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0575149A (en) * 1991-09-11 1993-03-26 Hitachi Ltd Manufacture of solar cell device
US20100084009A1 (en) * 2007-03-16 2010-04-08 Bp Corporation North America Inc. Solar Cells
CN102222726A (en) * 2011-05-13 2011-10-19 晶澳(扬州)太阳能科技有限公司 Technology for manufacturing interlaced back contact (IBC) crystalline silicon solar battery with ion implantation
WO2012081813A1 (en) * 2010-12-17 2012-06-21 현대중공업 주식회사 Back contact solar cell and method for fabricating same
CN103367539A (en) * 2013-06-26 2013-10-23 英利集团有限公司 Manufacturing method of IBC (Interdigitated Back Contact) solar cell and IBC solar cell
TW201431108A (en) * 2013-01-25 2014-08-01 Nat Univ Tsing Hua A process of manufacturing an interdigitated back-contact solar cell
CN105185858A (en) * 2015-08-06 2015-12-23 黄河水电光伏产业技术有限公司 Back contact type solar cell based on P-type silicon substrate and manufacturing method thereof
CN106158990A (en) * 2016-07-21 2016-11-23 英利能源(中国)有限公司 IBC battery, set of cells and preparation method
CN107112375A (en) * 2015-03-31 2017-08-29 株式会社钟化 Solar cell and solar module
CN108054223A (en) * 2018-01-11 2018-05-18 天合光能股份有限公司 A kind of all back-contact electrodes solar cell based on passivation contact technique
CN108110065A (en) * 2018-01-24 2018-06-01 泰州中来光电科技有限公司 A kind of back contact solar cell and preparation method thereof
EP3340317A1 (en) * 2016-10-25 2018-06-27 Shin-Etsu Chemical Co., Ltd High photoelectric conversion efficiency solar-cell and manufacturing method for high photoelectric conversion efficiency solar-cell

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0575149A (en) * 1991-09-11 1993-03-26 Hitachi Ltd Manufacture of solar cell device
US20100084009A1 (en) * 2007-03-16 2010-04-08 Bp Corporation North America Inc. Solar Cells
WO2012081813A1 (en) * 2010-12-17 2012-06-21 현대중공업 주식회사 Back contact solar cell and method for fabricating same
CN102222726A (en) * 2011-05-13 2011-10-19 晶澳(扬州)太阳能科技有限公司 Technology for manufacturing interlaced back contact (IBC) crystalline silicon solar battery with ion implantation
TW201431108A (en) * 2013-01-25 2014-08-01 Nat Univ Tsing Hua A process of manufacturing an interdigitated back-contact solar cell
CN103367539A (en) * 2013-06-26 2013-10-23 英利集团有限公司 Manufacturing method of IBC (Interdigitated Back Contact) solar cell and IBC solar cell
CN107112375A (en) * 2015-03-31 2017-08-29 株式会社钟化 Solar cell and solar module
CN105185858A (en) * 2015-08-06 2015-12-23 黄河水电光伏产业技术有限公司 Back contact type solar cell based on P-type silicon substrate and manufacturing method thereof
CN106158990A (en) * 2016-07-21 2016-11-23 英利能源(中国)有限公司 IBC battery, set of cells and preparation method
EP3340317A1 (en) * 2016-10-25 2018-06-27 Shin-Etsu Chemical Co., Ltd High photoelectric conversion efficiency solar-cell and manufacturing method for high photoelectric conversion efficiency solar-cell
CN108054223A (en) * 2018-01-11 2018-05-18 天合光能股份有限公司 A kind of all back-contact electrodes solar cell based on passivation contact technique
CN108110065A (en) * 2018-01-24 2018-06-01 泰州中来光电科技有限公司 A kind of back contact solar cell and preparation method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109244194A (en) * 2018-11-06 2019-01-18 东方日升(常州)新能源有限公司 A kind of preparation method of low cost p-type all back-contact electrodes crystal silicon solar battery
CN109244194B (en) * 2018-11-06 2023-09-01 东方日升(常州)新能源有限公司 Preparation method of low-cost P-type full back electrode crystalline silicon solar cell
CN109461782A (en) * 2018-12-25 2019-03-12 浙江晶科能源有限公司 P-type back contacted solar cell and preparation method thereof
CN111584685A (en) * 2020-05-28 2020-08-25 江西展宇新能科技有限公司 Novel solar cell and preparation method thereof
CN112510105A (en) * 2020-11-10 2021-03-16 浙江爱旭太阳能科技有限公司 High-efficiency solar cell and preparation method thereof
WO2022100081A1 (en) * 2020-11-10 2022-05-19 浙江爱旭太阳能科技有限公司 Highly efficient solar battery and preparation method therefor

Similar Documents

Publication Publication Date Title
CN100334744C (en) Silicon solar battery structure and making method
CN108649079A (en) Finger-like with passivation contact structures intersects back contacts solar cell and preparation method thereof
CN108666376B (en) P-type back contact solar cell and preparation method thereof
CN103996746B (en) Manufacturing method for PERL crystalline silicon solar cell capable of being massively produced
CN105895738A (en) Passivated contact N-type solar cell, preparation method, assembly and system
CN108666379A (en) A kind of p-type back contacts solar cell and preparation method thereof
CN106992229A (en) A kind of PERC cell backsides passivation technology
CN104993019A (en) Preparation method of localized back contact solar cell
CN110061083A (en) A kind of full-frontal passivation contacts the preparation method of efficient p-type crystal silicon solar battery
CN108666377A (en) A kind of p-type back contacts solar cell and preparation method thereof
CN105489671A (en) N-type double-sided solar cell and preparation method thereof
TW201236171A (en) Solar cell and solar-cell module
CN205564789U (en) Passivation contact N type solar cell and subassembly and system thereof
CN209232797U (en) Silica-based solar cell and photovoltaic module
CN208352305U (en) A kind of p-type back contacts solar cell
CN108666386B (en) P-type back contact solar cell and preparation method thereof
CN108039374A (en) The preparation method of N-shaped double-side solar cell
TW201515244A (en) Solar cell and solar cell module
CN103646994A (en) Preparation method of solar cell positive electrode
CN112736164A (en) Selective passivation method for front carrier, solar cell based on selective passivation method and preparation method
WO2012040917A1 (en) Shallow junction solar battery and manufacturing method thereof
CN208538871U (en) A kind of p-type back contacts solar cell
CN108172637A (en) A kind of polycrystalline mixes gallium back of the body passivating solar battery and preparation method thereof
CN108649078A (en) A kind of p-type back contacts solar cell and preparation method thereof
CN107046070A (en) A kind of P-type crystal silicon battery structure and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20181016